CN103887285B - Method for manufacturing anti-static TFT substrate - Google Patents
Method for manufacturing anti-static TFT substrate Download PDFInfo
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- CN103887285B CN103887285B CN201410100346.9A CN201410100346A CN103887285B CN 103887285 B CN103887285 B CN 103887285B CN 201410100346 A CN201410100346 A CN 201410100346A CN 103887285 B CN103887285 B CN 103887285B
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Abstract
The invention relates to a method for manufacturing an anti-static TFT substrate. The method includes the steps of providing a TFT substrate, manufacturing an ITO film laminated on the TFT substrate through magnetron sputtering to obtain an intermediate product, heating the intermediate product to be at 150 DEG C-160 DEG C, keeping the intermediate product at 150 DEG C-160 DEG C for 10 minutes to 30 minutes, and carrying out natural cooling to obtain the anti-static TFT substrate. Experiments indicate that the anti-static TFT substrate manufactured with the method is stable in ESD prevention performance.
Description
Technical field
The present invention relates to TFT substrate technical field, more particularly to a kind of preparation method of antistatic TFT substrate.
Background technology
At present, typically in TFT（Thin-Film Transistor）IITO is prepared on substrate（Tin indium oxide）Film is obtained
Antistatic TFT substrate, anti-ESD is carried out with to TFT substrate（Electro-Static discharge）.
Antistatic TFT substrate share commercially is increasing, and the accumulation of product inventory is also increasing, the guarantor of product
The phase of depositing is the maximum problem of existing market.Product Conservation environment somewhat expensive, the time is about at 3~6 months, once product is encountered
Acid, alkali, humiture are exceeded, easily cause ito film layer and come off, anti-ESD failures, most direct solution：Remove film layer, again
Plating last layer ito film layer, it is time-consuming, take a lot of work, environmental pollution, secondary fragment increases processing cost.
The content of the invention
It is relatively stable to prepare anti-ESD performances based on this, it is necessary to provide a kind of preparation method of antistatic TFT substrate
TFT substrate.
A kind of preparation method of antistatic TFT substrate, comprises the following steps：
TFT substrate is provided；
The ito thin film being laminated in the TFT substrate is prepared using magnetron sputtering, intermediate products are obtained；And
The intermediate products are heated to 150 DEG C~160 DEG C, and in being incubated 10 clock~30 minute at 150 DEG C~160 DEG C,
Natural cooling, obtains the antistatic TFT substrate.
Wherein in one embodiment, the use magnetron sputtering prepares the ito thin film being laminated in the TFT substrate,
In the step of obtaining intermediate products, the temperature of the TFT substrate is 60 DEG C~80 DEG C.
Wherein in one embodiment, the use magnetron sputtering prepares the ito thin film being laminated in the TFT substrate,
In the step of obtaining intermediate products, the voltage of the magnetron sputtering is 300V~380V, and power is 2500W~3500W.
Wherein in one embodiment, the use magnetron sputtering prepares the ito thin film being laminated in the TFT substrate,
In the step of obtaining intermediate products, the vacuum of the magnetron sputtering is 2.5 × 10-1Pa~3.50 × 10-3Pa。
Wherein in one embodiment, the use magnetron sputtering prepares the ito thin film being laminated in the TFT substrate,
In the step of obtaining intermediate products, the TFT substrate is 70mm~80mm with the distance of target.
Wherein in one embodiment, the use magnetron sputtering prepares the ito thin film being laminated in the TFT substrate,
In the step of obtaining intermediate products, the speed of service of the TFT substrate is 1.0m/min~1.2m/min.
Wherein in one embodiment, the use magnetron sputtering prepares the ito thin film being laminated in the TFT substrate,
In the step of obtaining intermediate products, the flow of reacting gas is 180sccm~220sccm, and the flow of process gas is
1000sccm~1300sccm.
Wherein in one embodiment, the use magnetron sputtering prepares the ito thin film being laminated in the TFT substrate,
In the step of obtaining intermediate products, the magnetron sputtering be using three targets enter Line Continuity plated film prepare be laminated in it is described
Ito thin film in TFT substrate.
It is described that the intermediate products are heated in 150 DEG C~160 DEG C of operation wherein in one embodiment, heat up
Speed is 5 DEG C/min~30 DEG C/min.
Wherein in one embodiment, the use magnetron sputtering prepares the ito thin film being laminated in the TFT substrate,
Before the step of obtaining intermediate products, also including the step that the TFT substrate is cleaned and dried, the cleaning and drying
The step of be specially：The TFT substrate is washed with pure water and alkali lye successively, then carry out successively again two fluid sprays,
Ultrapure Water spray and high-pressure spraying, then in turn through cold wind and heated-air drying.
After the preparation method of above-mentioned antistatic TFT substrate prepares ito thin film on the tft substrate, be heated to 150 DEG C~
160 DEG C, and in 10 clock~30 minute are incubated at 150 DEG C~160 DEG C, natural cooling obtains antistatic TFT substrate.Through testing table
Bright, the anti-ESD performances of the antistatic TFT substrate prepared by the method are relatively stable.
Brief description of the drawings
Fig. 1 is the preparation method flow chart of the antistatic TFT substrate of an implementation method；
Fig. 2 is the schematic diagram of the preparation method of the antistatic TFT substrate shown in Fig. 1.
Specific embodiment
To enable the above objects, features and advantages of the present invention more obvious understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.Elaborate many details in order to fully understand this hair in the following description
It is bright.But the present invention can be implemented with being much different from other manner described here, and those skilled in the art can be not
Similar improvement is done in the case of running counter to intension of the present invention, therefore the present invention is not limited by following public specific implementation.
Fig. 1 is referred to, the preparation method of the antistatic TFT substrate of an implementation method comprises the following steps S110~step
S130。
Step S110：TFT substrate is provided.
In order to ensure the knot cleanliness of TFT substrate, TFT substrate is cleaned and is dried first.Cleaning and the step for drying
Specially：TFT substrate is washed with pure water and alkali lye successively, two fluid sprays, ultrapure Water spray is then carried out successively again
And high-pressure spraying, then in turn through cold wind and heated-air drying.
Alkali lye is alkaline detergent, such as washing powder solution, liquid detergent solution.
High-pressure spraying refers to high-pressure spraying ultra-pure water, and pressure is preferably 1.5kg/cm2, fully to remove in TFT substrate
The pollutants such as dust, greasy dirt, but TFT substrate is not damaged.
After TFT substrate is cleaned up, cold wind and heated-air drying are sequentially passed through, then check TFT substrate surface cleaning matter
Amount, it is qualified, it is standby.Cold wind and heated-air drying are used successively, TFT substrate risk of rupture is advantageously reduced, and protect TFT substrate.
Step S120：The ito thin film being laminated in TFT substrate is prepared using magnetron sputtering, intermediate products are obtained.
Please refer to Fig. 2, crystals dried TFT substrate sequentially passes through to enter into after piece room, transition chamber and surge chamber splashes
Penetrating room carries out plated film.
In coating process, the temperature of TFT substrate is 60 DEG C~80 DEG C.The vacuum of magnetron sputtering is 2.5 × 10-1Pa~
3.50×10-3Pa.The power supply of magnetron sputtering is 300V~380V, and power is 2500W~3500W.The speed of service of TFT substrate is
1.0m/min~1.8m/min.
Using ITO target as target, wherein, indium oxide（In2O3）And tin oxide（SnO2）Mol ratio be 9:1.
Preferably, TFT substrate and the distance of target are 70mm~80mm.
Using oxygen as reacting gas, using ar gas acting process gas.Preferably, the flow of reacting gas is
180sccm~220sccm, the flow of process gas is 1000sccm~1300sccm.
Above-mentioned use magnetron sputtering is prepared and is laminated in the ito thin film in TFT substrate, and the temperature of TFT substrate is only 60 DEG C
~80 DEG C, energy consumption is relatively low.Meanwhile, by the speed of service of the rationally vacuum of setting magnetron sputtering, power supply, power, TFT substrate
And the flow of reacting gas and process gas, compactness is good, adhesive force is high can be prepared at a temperature of relatively low TFT substrate and
The good ito thin film of thickness evenness.
Thickness 150nm~the 250nm of prepared ito thin film, to ensure the anti-ESD effects and light transmittance of TFT substrate.Thoroughly
Light rate is controlled 95% or more than 95%, to meet the use demand of TFT substrate.
Preferably, sputtering chamber is two, one of to place two targets, and another places a target, with three targets
Material enters Line Continuity plated film and prepares the ito thin film being laminated in TFT substrate, is conducive to improving film thickness uniformity.
Step S130：Intermediate products are heated to 150 DEG C~160 DEG C, and in being incubated 10 clock~30 at 150 DEG C~160 DEG C
Minute, natural cooling obtains the antistatic TFT substrate.
Preferably, intermediate products are heated in 150 DEG C~160 DEG C of operation, heating rate be 5 DEG C/min~30 DEG C/
Min, using the heating rate, is conducive to improving the crystal property of ito thin film, improves anti-ESD performances.
Intermediate products obtain antistatic TFT substrate in being incubated 10 clock~30 minute, natural cooling at 150 DEG C~160 DEG C.
After above-mentioned condition is annealed, adhesive force of the ito thin film on the substrate of TFT is improved, and hardness also increases, anti-oxidant energy
Power strengthens, and the moisture in air and dust adsorption ability are declined, and weak acid resistant and weak base performance are good so that ito thin film is more steady
It is fixed, so as to improve the anti-ESD performances of TFT substrate.
Referring to Fig. 2, it is preferable that enter surge chamber after having plated the TFT substrate of ito thin film, then again from surge chamber
It is heat-treated into heating chamber.Preferably, surge chamber has four, four linear formula arrangements of surge chamber.Heating chamber has three,
Three linear formula arrangements of heating chamber.
After the TFT substrate of ito thin film is warming up to 150 DEG C~160 DEG C in heating chamber, in being incubated 10 at 150 DEG C~160 DEG C
Clock~30 minute, subsequently into slice room, room temperature are naturally cooled in slice room, obtain antistatic TFT substrate.
By setting four surge chambers and three heating chambers, the TFT substrate that can have plated ito thin film to multiple simultaneously is carried out
Heating and insulation, are conducive to reducing energy consumption and improve efficiency.Four surge chambers can preferably enter row buffering, improve continuous production
Order.
The adhesive force and hardness of the ito thin film that the preparation method of above-mentioned antistatic TFT substrate is formed are higher and anti-oxidant
Ability strengthens, and the moisture in air and dust adsorption ability is declined so that ito thin film stability in itself is higher, and is difficult
Come off from TFT substrate, so that the anti-ESD performances of TFT substrate are relatively stable, it is as long as its storage time was up to 2 years and right
Storage condition requirement is relatively low, reduces storage cost.
The preparation method energy consumption of above-mentioned antistatic TFT substrate is low, and due to placing the long period again after, remain to keep preferable
Anti- ESD performances, without do over again, technique plates ito film, low-carbon environment-friendly again.
It is expanded on further below by way of specific embodiment.
Embodiment 1
Prepare antistatic TFT substrate
1st, TFT substrate is improved, TFT substrate is washed with pure water and alkali lye successively, then carry out two fluids successively again
Spray, ultrapure Water spray and high-pressure spraying, it is standby then in turn through cold wind and heated-air drying, wherein, the pressure of high-pressure spraying
It is 1.5kg/cm2；
2nd, the ito thin film being laminated in TFT substrate is prepared using magnetron sputtering, intermediate products are obtained；In coating process,
The temperature of TFT substrate is 80 DEG C, and the vacuum of magnetron sputtering is 2.5 × 10-1Pa, power supply is 300V, and power is 2500W, TFT bases
The speed of service of plate is 1.0m/min, TFT substrate and ITO target（In2O3:SnO2=9:1）Distance be 70mm, the flow of oxygen
It is 180sccm, the flow of argon gas is 1000sccm；
3rd, intermediate products are heated to 150 DEG C, heating rate is 5 DEG C/min, by intermediate products in 150 DEG C of upper 30 points of insulations
Clock, natural cooling obtains antistatic TFT substrate.
Wherein, tested after the completion of preparation, 500 Ω of TFT substrate sheet resistance/, the thickness of ito thin film is
210nm, the light transmittance of ito thin film is 96%.Adhesive force 5B (hundred lattice test 0-5B, and 3B or more than 3B is qualified), cotton swab glues acetic acid
Wipe ito thin film surface to be come off without film layer for 30 seconds, film hardness 9H（6H or more than 6H is qualified）, by the antistatic TFT substrate
In the sodium hydrate aqueous solution that mass concentration is 4% soak 5 minutes, the rate of change of the sheet resistance of ito thin film within 30%,
It is qualified.
The antistatic TFT substrate is stored in temperature for 25 ± 10 DEG C, humidity are 10%~90% and cleanliness factor is ten thousand grade-ten
In ten thousand grades of warehouse, after 24 months, tested, 510 Ω of TFT substrate sheet resistance/, adhesive force 5B, the viscous acetic acid of cotton swab is wiped
Wipe ito thin film surface to be come off without film layer for 30 seconds, film hardness 7H, illustrate the antistatic TFT substrate ito thin film stability compared with
It is good so that the anti-ESD performances of antistatic TFT substrate are relatively stable.
Embodiment 2
Prepare antistatic TFT substrate
1st, TFT substrate is improved, TFT substrate is washed with pure water and alkali lye successively, then carry out two fluids successively again
Spray, ultrapure Water spray and high-pressure spraying, it is standby then in turn through cold wind and heated-air drying, wherein, the pressure of high-pressure spraying
It is 1.5kg/cm2；
2nd, the ito thin film being laminated in TFT substrate is prepared using magnetron sputtering, intermediate products are obtained；In coating process,
The temperature of TFT substrate is 60 DEG C, and the vacuum of magnetron sputtering is 3.50 × 10-3Pa, power supply is 380V, and power is 3500W, TFT
The speed of service of substrate is 1.8m/min, TFT substrate and ITO target（In2O3:SnO2=9:1）Distance be 80mm, the stream of oxygen
It is 220sccm to measure, and the flow of argon gas is 1300sccm；
3rd, intermediate products are heated to 160 DEG C, heating rate is 30 DEG C/min, by intermediate products in being incubated 10 at 160 DEG C
Minute, natural cooling obtains antistatic TFT substrate.
Wherein, tested after the completion of preparation, 400 Ω of TFT substrate sheet resistance/, the thickness of ito thin film is
250nm, the light transmittance of ito thin film is 96%.Adhesive force 5B (hundred lattice test 0-5B, and 3B or more than 3B is qualified), cotton swab glues acetic acid
Wipe ito thin film surface to be come off without film layer for 30 seconds, film hardness 9H（6H or more than 6H is qualified）, by the antistatic TFT substrate
In the sodium hydrate aqueous solution that mass concentration is 4% soak 5 minutes, the rate of change of the sheet resistance of ito thin film within 30%,
It is qualified.
The antistatic TFT substrate is stored in temperature for 25 ± 10 DEG C, humidity are 10%~90% and cleanliness factor is ten thousand grade-ten
In ten thousand grades of warehouse, after 24 months, tested, 500 Ω of TFT substrate sheet resistance/, adhesive force 5B, the viscous acetic acid of cotton swab is wiped
Wipe ito thin film surface to be come off without film layer for 30 seconds, film hardness 7H, illustrate the antistatic TFT substrate ito thin film stability compared with
It is good so that the anti-ESD performances of antistatic TFT substrate are relatively stable.
Embodiment 3
Prepare antistatic TFT substrate
1st, TFT substrate is improved, TFT substrate is washed with pure water and alkali lye successively, then carry out two fluids successively again
Spray, ultrapure Water spray and high-pressure spraying, it is standby then in turn through cold wind and heated-air drying, wherein, the pressure of high-pressure spraying
It is 1.5kg/cm2；
2nd, the ito thin film being laminated in TFT substrate is prepared using magnetron sputtering, intermediate products are obtained；In coating process,
The temperature of TFT substrate is 70 DEG C, and the vacuum of magnetron sputtering is 3.00 × 10-3Pa, power supply is 350V, and power is 3000W, TFT
The speed of service of substrate is 1.2m/min, TFT substrate and ITO target（In2O3:SnO2=9:1）Distance be 75mm, the stream of oxygen
It is 200sccm to measure, and the flow of argon gas is 1200sccm；
3rd, intermediate products are heated to 155 DEG C, heating rate is 15 DEG C/min, by intermediate products in being incubated 20 at 155 DEG C
Minute, natural cooling obtains antistatic TFT substrate.
Wherein, tested after the completion of preparation, 450 Ω of TFT substrate sheet resistance/, the thickness of ito thin film is
250nm, the light transmittance of ito thin film is 96%.Adhesive force 5B (hundred lattice test 0-5B, and 3B or more than 3B is qualified), cotton swab glues acetic acid
Wipe ito thin film surface to be come off without film layer for 30 seconds, film hardness 9H（6H or more than 6H is qualified）, by the antistatic TFT substrate
In the sodium hydrate aqueous solution that mass concentration is 4% soak 5 minutes, the rate of change of the sheet resistance of ito thin film within 30%,
It is qualified.
The antistatic TFT substrate is stored in temperature for 25 ± 10 DEG C, humidity are 10%~90% and cleanliness factor is ten thousand grade-ten
In ten thousand grades of warehouse, after 24 months, tested, 500 Ω of TFT substrate sheet resistance/, adhesive force 5B, the viscous acetic acid of cotton swab is wiped
Wipe ito thin film surface to be come off without film layer for 30 seconds, film hardness 7H, illustrate the antistatic TFT substrate ito thin film stability compared with
It is good so that the anti-ESD performances of antistatic TFT substrate are relatively stable.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Shield scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (3)
1. a kind of preparation method of antistatic TFT substrate, it is characterised in that comprise the following steps：
TFT substrate is provided；
The ito thin film being laminated in the TFT substrate is prepared using magnetron sputtering, intermediate products are obtained, wherein, the use magnetic
Control sputtering is prepared and is laminated in ito thin film in the TFT substrate, the step of obtain intermediate products in, the temperature of the TFT substrate
It it is 60 DEG C~80 DEG C, the voltage of the magnetron sputtering is 300V~380V, and power is 2500W~3500W, the magnetron sputtering
Vacuum is 2.5 × 10-1Pa~3.50 × 10-3Pa, the TFT substrate is 70mm~80mm, the TFT with the distance of target
The speed of service of substrate is 1.0m/min~1.8m/min, and the flow of reacting gas is 180sccm~220sccm, process gas
Flow be 1000sccm~1300sccm；And
The intermediate products are heated to 150 DEG C~160 DEG C, and in 10 clock~30 minute are incubated at 150 DEG C~160 DEG C, it is natural
Cooling, obtains the antistatic TFT substrate；It is wherein, described that the intermediate products are heated in 150 DEG C~160 DEG C of operation,
Heating rate is 5 DEG C/min~30 DEG C/min.
2. the preparation method of antistatic TFT substrate according to claim 1, it is characterised in that the use magnetron sputtering
Preparation is laminated in ito thin film in the TFT substrate, the step of obtain intermediate products in, the magnetron sputtering is using three
Target enters Line Continuity plated film and prepares the ito thin film being laminated in the TFT substrate.
3. the preparation method of antistatic TFT substrate according to claim 1, it is characterised in that the use magnetron sputtering
Preparation is laminated in ito thin film in the TFT substrate, the step of obtain intermediate products before, also including entering to the TFT substrate
The step of row cleaning and the step for drying, the cleaning and drying is specially：The TFT substrate is entered with pure water and alkali lye successively
Row washing, then carries out two fluid sprays, ultrapure Water spray and high-pressure spraying, then in turn through cold wind and hot air drying successively again
It is dry.
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| CN105226016B (en) * | 2015-10-14 | 2018-11-23 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof |
| CN106356334B (en) * | 2016-10-27 | 2019-01-01 | 江西沃格光电股份有限公司 | The production technology of antistatic TFT substrate |
| CN109481841A (en) * | 2018-10-29 | 2019-03-19 | 晶晨半导体(上海)股份有限公司 | A method of improving Electro-static Driven Comb performance |
| CN110527963B (en) * | 2019-08-05 | 2021-09-07 | 芜湖长信科技股份有限公司 | Manufacturing method of anti-static touch display integrated screen |
| CN110981214A (en) * | 2019-12-19 | 2020-04-10 | 芜湖长信科技股份有限公司 | Liquid crystal panel toning glass and production process thereof |
| CN111257230B (en) * | 2020-02-13 | 2022-12-20 | 北京石墨烯研究院 | Photoelectric detection probe |
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