CN103872906B - The control device and method of communication power supply - Google Patents
The control device and method of communication power supply Download PDFInfo
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- CN103872906B CN103872906B CN201210550212.8A CN201210550212A CN103872906B CN 103872906 B CN103872906 B CN 103872906B CN 201210550212 A CN201210550212 A CN 201210550212A CN 103872906 B CN103872906 B CN 103872906B
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Abstract
The present invention provides a kind of control device and methods of communication power supply.Wherein, which includes：Divider is formed by field-effect transistor and with the concatenated build-out resistor of field-effect transistor, for being divided from accessory power supply；Operational amplifier is connect with divider, the turn-on and turn-off for controlling field-effect transistor according to the voltage of field-effect transistor；Alarm detection circuit, connect with divider and operational amplifier, for when detecting field-effect transistor shutdown, sending out the alarm signal that instruction present communications power supply is in stop working state.Through the invention, achieved the effect that improve the reliability in ORING circuits.
Description
Technical field
The present invention relates to the communications fields, in particular to a kind of control device and method of communication power supply.
Background technology
In order to ensure the reliability of system in the power supply system for communications, in the occasion that system power supply is applied frequently with power supply 1+1
Or the application of N+1 backups.Multiple power supplys, which work at the same time, must take rational combining（ORING）Circuit ensures the reliable of circuit
While property power supply is not interacted each other.
In the ORING circuits that existing analog device is constituted, chip controls MOS field is either mostly controlled with diode
Imitate transistor（Metal-Oxide-Semiconductor Field-Effect Transistor, referred to as MOSFET）Come real
It is existing.Simple introduction is done below：
（1）The smaller occasion of electric current is suitable for using the ORING circuits of diode design, this circuit does not have to individually control
System, it is simple in structure（Referring to FIG. 1, Fig. 1 is to realize ORING circuit theory schematic diagrams according to the diode of the relevant technologies）, have very
High reliability.However since diode conduction voltage drop is larger, the heat consumption on corresponding each diode is also larger, therefore by heat consumption
Limitation, this scheme can be only applied to the occasion of low current.By taking conventional diode as an example, for D2PAK encapsulation diode, by
The limitation of conduction voltage drop, when conducting electric current Io is only 3A, conduction voltage drop Vdrop is 0.5V, and power consumption just has reached 1.5W,
Thus the larger power consumption of diode results in us and can not be applied under the occasion of high current.
（2）The occasion of high current application uses to solve the problems, such as that diode generates heat using MOSFET as core devices
Control circuit.For MOSFET because its internal resistance is small in ORING circuits, conduction voltage drop is smaller, and calorific value is low and is widely used.Mesh
In preceding application, MOSFET ORING controller applications are more universal.Fig. 2, Fig. 3 are please also refer to, Fig. 2 is according to the relevant technologies
Controller realizes that MOSFET ORING circuits and current trend schematic diagram, Fig. 3 are compared inside the controller according to the relevant technologies
Device Some principles schematic diagram.As shown in figure 3, the operation principle of controller internal comparator is：The chip interior integrated transporting discharging, will
Amplifier is used as hysteresis loop comparator, and amplifier input terminal INN, INP of chip detect the source electrode and drain electrode of MOSFET respectively,
(INP-INN) pressure difference determines the working condition of MOSFET.
Fig. 4 is according to the schematic diagram of the hysteresis working curve of the comparator of the relevant technologies, as shown in figure 4, the comparator
Hysteresis working curve can reflect that the course of work of controller internal comparator is as follows：
（1）Work as VINP-VINN>VHYST- | VOS | when VOUT export high level, work as VINP-VINN<| VOS | when VOUT it is defeated
Go out low level, wherein VHYST is hysteresis value, and VOS is threshold value；
（2）Turn on process：The body diode of initial MOSFET is first connected, and electric current diode in MOSFET bodies is formed back
Road, the pressure drop at metal-oxide-semiconductor both ends（VINP-VINN）More than VHYST- | VOS | value, VOUT export high level, and MOSFET is reliably connected；
（3）Turn off process：When the pressure drop at metal-oxide-semiconductor both ends（VINP-VINN）<| VOS | when, VOUT exports low level and realizes
The shutdown of MOSFET, the electric current for flowing through MOSFET are reversed and reach predetermined value reliable turn-off just may be implemented.
Currently, the MOSFET of common high current high voltage, internal resistance Rdson are differed from several milliohms to tens milliohms,
In the case of big operating current, it usually needs the MOSFET for choosing small internal resistance reaches (VOS/ from normal operating conditions to reverse current
Rdson) voltage value can realize reliable turn-off.Before this, MOSFET is constantly in conducting state as shown in Fig. 2, the roads B are electric
Source works normally, and the roads A power supply, which needs reverse current I to reach enough values, can just turn off.When I is unable to reach required value, instead
Flow through warning circuit arrival -48VA to electric current from -48VGND, from -48VA after MOSFET VT1 by MOSFET VT2 to
Closed circuit is constituted up to -48VB.
At this point, the MOSFETs of -48VA with -48VB by two conductings is connected, the voltage difference between -48VA and -48VGND
It is approximately the voltage difference between -48VB and -48VGND, i.e.,：In MOSFET（VT1）There are problems that voltage is counter to fill, at this time
The abnormal roads A power supply because this voltage presence, alarm detection circuit can not detect abnormal conditions, host computer None- identified
Failure, indicator light show that normally, until an other power cut-off, system power failure is unable to reach the purpose of power supply backup.
Power supply backup is caused to fail for there is anti-fill of voltage on the relevant technologies field effect transistors MOSFET,
Currently no effective solution has been proposed.
Invention content
The present invention provides a kind of control device and methods of communication power supply, at least to solve the above problems.
According to an aspect of the invention, there is provided a kind of control device of communication power supply, including：Divider is imitated by field
It transistor and is formed with the concatenated build-out resistor of field-effect transistor, for being divided from accessory power supply；Operational amplifier, with partial pressure
Device connects, the turn-on and turn-off for controlling field-effect transistor according to the voltage of field-effect transistor；Alarm detection circuit, with partial pressure
Device is connected with operational amplifier, is stopped for when detecting field-effect transistor shutdown, sending out instruction present communications power supply and being in
The alarm signal of working condition.
Preferably, field-effect transistor is metal oxide layer semiconductor field-effect transistor（MOSFET）.
Preferably, the source electrode of the positive input terminal of operational amplifier and MOSFET connect, the negative input end of operational amplifier with
The drain electrode of MOSFET connects.
Preferably, the input terminal voltage between source electrode and drain electrode of the operational amplifier by the way that obtained MOSFET will be detected with
The mode that preset voltage threshold compares controls the on or off of MOSFET.
Preferably, in the case where input terminal voltage is less than voltage threshold, operational amplifier exports low level, shutdown
MOSFET, otherwise, operational amplifier export high level, keep the conducting state of MOSFET.
According to another aspect of the present invention, a kind of control method of communication power supply is provided, including：Operational amplifier according to
The turn-on and turn-off of the voltage control field-effect transistor of divider field effect transistors, wherein divider is by field-effect transistor
With with field-effect transistor concatenated build-out resistor composition, for being divided from accessory power supply；Alarm detection circuit is detecting
In the case that field-effect transistor has been switched off, the alarm signal that instruction present communications power supply is in stop working state is sent out.
Preferably, field-effect transistor is metal oxide layer semiconductor field-effect transistor（MOSFET）.
Preferably, the source electrode of the positive input terminal of operational amplifier and MOSFET connect, the negative input end of operational amplifier with
The drain electrode of MOSFET connects.
Preferably, operational amplifier controls the turn-on and turn-off of field-effect transistor according to the voltage of field-effect transistor, including：
Operational amplifier obtains the input terminal voltage between the source electrode of MOSFET, drain electrode by detection mode；It is less than in input terminal voltage
In the case of preset voltage threshold, operational amplifier exports low level, turns off MOSFET, otherwise, operational amplifier is defeated
Go out high level, keeps the conducting state of MOSFET.
Through the invention, it by the way of the turn-on and turn-off for controlling field-effect transistor by operational amplifier, solves
Field-effect transistor（MOSFET）On there are problems that voltage instead fill and cause power supply backup to fail, can be closed without reverse current
Field-effect transistor in disconnected ORING circuits（MOSFET）, and then achieved the effect that improve the reliability in ORING circuits.
Description of the drawings
Attached drawing described herein is used to provide further understanding of the present invention, and is constituted part of this application, this hair
Bright illustrative embodiments and their description are not constituted improper limitations of the present invention for explaining the present invention.In the accompanying drawings：
Fig. 1 is to realize ORING circuit theory schematic diagrams according to the diode of the relevant technologies；
Fig. 2 is to realize MOSFET ORING circuits and current trend schematic diagram according to the controller of the relevant technologies；
Fig. 3 is the controller internal comparator Some principles schematic diagram according to the relevant technologies；
Fig. 4 is the schematic diagram according to the hysteresis working curve of the comparator of the relevant technologies；
Fig. 5 is the structure diagram of the control device of communication power supply according to the ... of the embodiment of the present invention；
Fig. 6 is the control method flow chart of communication power supply according to the ... of the embodiment of the present invention；And
Fig. 7 is the ORING circuit diagrams of operational amplifier control MOSFET according to the preferred embodiment of the invention.
Specific implementation mode
Come that the present invention will be described in detail below with reference to attached drawing and in conjunction with the embodiments.It should be noted that not conflicting
In the case of, the features in the embodiments and the embodiments of the present application can be combined with each other.
Fig. 5 is the structure diagram of the control device of communication power supply according to the ... of the embodiment of the present invention, as shown in figure 5, the device
Including：Divider 10, operational amplifier 20 and alarm detection circuit 30.Wherein, divider 10, by field-effect transistor and with field
The concatenated build-out resistor composition of transistor is imitated, for being divided from accessory power supply；Operational amplifier 20, connect with divider, uses
In the turn-on and turn-off for controlling field-effect transistor according to the voltage of field-effect transistor；Alarm detection circuit 30, with divider 10 and
Operational amplifier 20 connects, and stops work for when detecting field-effect transistor shutdown, sending out instruction present communications power supply and being in
Make the alarm signal of state.
In the present embodiment, field-effect transistor is metal oxide layer semiconductor field-effect transistor（MOSFET）.
In the present embodiment, the source electrode of the positive input terminal of operational amplifier and MOSFET connect, and bearing for operational amplifier is defeated
The drain electrode for entering end and MOSFET connects.
In the present embodiment, the input terminal between source electrode and drain electrode of the operational amplifier by the way that obtained MOSFET will be detected
The mode that voltage is compared with preset voltage threshold, controls the on or off of MOSFET.
In the present embodiment, in the case where input terminal voltage is less than voltage threshold, operational amplifier exports low level, closes
Disconnected MOSFET, otherwise, operational amplifier exports high level, keeps the conducting state of MOSFET.
Fig. 6 is the control method flow chart of communication power supply according to the ... of the embodiment of the present invention, as shown in fig. 6, this method is main
Include the following steps（Step S602- steps S604）：
Step S602, operational amplifier according to the voltage of divider field effect transistors control field-effect transistor conducting and
Shutdown, wherein divider is formed by field-effect transistor and with the concatenated build-out resistor of field-effect transistor, for electric from auxiliary
It is divided on source；
It is current to send out instruction in the case where detecting that field-effect transistor has been switched off for step S604, alarm detection circuit
Communication power supply is in the alarm signal of stop working state.
Preferably, field-effect transistor is metal oxide layer semiconductor field-effect transistor（MOSFET）.
In the present embodiment, the source electrode of the positive input terminal of operational amplifier and MOSFET connect, and bearing for operational amplifier is defeated
The drain electrode for entering end and MOSFET connects.
In the present embodiment, operational amplifier controls conducting and the pass of field-effect transistor according to the voltage of field-effect transistor
It is disconnected, including：Operational amplifier obtains the input terminal voltage between the source electrode of MOSFET, drain electrode by detection mode；In input terminal
In the case that voltage is less than preset voltage threshold, operational amplifier exports low level, turns off MOSFET, otherwise, operation
Amplifier exports high level, keeps the conducting state of MOSFET.
Using the control device and method for the communication power supply that above-described embodiment provides, operational amplifier being capable of controlling filed effect crystalline substance
The turn-on and turn-off of body pipe, solve field-effect transistor（MOSFET）On there are voltage instead fill and cause power supply backup failure ask
Topic, the field-effect transistor in ORING circuits can be turned off without reverse current（MOSFET）, and then reached raising ORING
The effect of reliability in circuit.
The control device of the communication power supply that above-described embodiment is provided with reference to preferred embodiment and communication power supply
Control method is further detailed.
What preferred embodiments described below provided can pass through operational amplifier（Hereinafter referred to as amplifier）What is controlled is discrete
Device（Primary includes divider）Realize mainly has following characteristics without the anti-device for filling ORING circuits：A, it replaces passing with MOSFET
The diode of system realizes 1+1 or the N+1 backup of power supply；B, use the discrete device that amplifier controls for core control circuit.It is logical
It crosses and the MOSFET in ORING circuits is controlled, its reliable turn-on and turn-off may be implemented, and then reached and filled without anti-
The purpose of ORING circuits.
Fig. 7 is the ORING circuit diagrams that operational amplifier according to the preferred embodiment of the invention puts control MOSFET, such as
Shown in Fig. 7, the control device of communication power supply is mainly realized by following constituted mode：
First, using the output voltage negative terminal of ORING circuits as reference data, MOSFET and build-out resistor series connection are as partial pressure
Device is divided from accessory power supply, and the negative terminal of amplifier is accessed after partial pressure, and the anode of amplifier is directly over build-out resistor from accessory power supply
It is accessed after partial pressure.
The voltage difference that amplifier passes through detection positive-negative input end（Hereinafter referred to as pressure difference）, using output voltage as MOSFET's
Gate pole control terminal controls the turn-on and turn-off of MOSFET.When high current, amplifier can play the role of conducting as comparator；It is small
When electric current, amplifier is operated in linear zone, and output voltage values determine the internal resistance of MOSFET, and then are realized after constituting feedback control loop
Reliable conducting.When electric current is smaller, the input terminal pressure difference of amplifier can be relatively smaller, therefore MOSFET is operated in linear zone, defeated
Going out voltage is then influenced by the self-characteristic of amplifier, is generally determined by operational amplifier circuit gain.When shutdown, then it is not necessarily to reverse current, only
Above-mentioned pressure difference is wanted to can be carried out effectively turning off less than threshold value, to realize without the anti-ORING circuits filled.
The preferred embodiment can be applied in high-power high-current occasion, in practical applications, may be used one or
Multiple MOSFET constitute ORING circuits, when use MOSFET for it is multiple when, the mode of paralleling MOS FET may be used, below
It is illustrated for the ORING circuits only constituted in the way of taking two MOSFET in parallel（At this point, internal resistance can be reduced to not
Sufficient 2m Ω）.
From figure 7 it can be seen that the input negative terminal INA- and input positive terminal INA+ of amplifier connect drain electrode and the source of MOSFET respectively
Pole, the pressure drop at the both ends detection MOSFET, when the pressure drop detected is more than the voltage at the both ends resistance R33, i.e. INA- terminal voltages are low
When INA+ terminal voltages, amplifier exports high level, MOSFET conductings.
In whole work process, the internal resistance Rdson of MOSFET is smaller, and conduction voltage drop is very low, when the input side pressure of amplifier
When difference is smaller, amplifier is operated in linear zone, and output is determined by the pressure difference of input voltage and the gain of amplifier, the product of the two
Determine the value of output voltage, output voltage values cannot be fully achieved VCC at this time, therefore it is unloaded when MOSFET driving electricity
Pressure can be relatively low.In the case where electric current is certain, driving voltage reduces, and Rdson becomes larger.It can be seen that whole work process is
The negative feedback process of one dynamic regulation.
Rdson is smaller->Conduction voltage drop is low->Driving voltage is low->Rdson increases, under the action of this negative-feedback,
MOSFET effectively can reliably be connected, and can learn its power consumption also within the range of permission by calculating.
By being analyzed above it is found that the condition that amplifier output low level turns off MOSFET is：Amplifier positive input terminal voltage Vin+<
It is as follows to calculate two voltages using the -48V of output as reference zero by amplifier negative input end voltage Vin-：
Vin+=VCCB*R39/（R38+R39）（VCCB is accessory power supply）；
If the conduction voltage drop of MOSFET is Vm, direction is that from right to left, can be obtained by Kirchhoff's second law：Vin-
=VCCB-（VCCB+Vm）* R32/ (R33+R32+R34) takes R32=R38, R39=R34
By Vin+<Vin- can obtain Vm<VCCB*R33/（R34+R32）Amplifier, that is, exportable low level realizes shutdown
MOSFET.That is, as long as conduction voltage drop effectively turns off MOSFET less than a positive value that can be arranged, to avoid instead filling electricity
Pressure.
Conversely, working as Vm>VCCB*R33/（R34+R32）When Vin+>Vin-, amplifier have output.Pressure between Vin+ and Vin-
Amplifier is operated in linear zone when difference is small, and output voltage is relatively low, and the Rdson of MOSFET can be relatively large, in order to ensure
MOSFET can reliably work, and can be accounted for its pressure drop and power consumption：Pass through the amplification factor and accessory power supply of amplifier
VCCB is it can be calculated that the other pressure difference VB of millivolt level can just make amplifier output reach VCCB.
It can be obtained by Such analysis as drawn a conclusion：
A、Vm<VCCB*R33/ (R34+R32), Vgs=0, Rdson are infinitely great, Pw=0；
B、VCCB*R33/（R34+R32）<Vm<VCCB*R33/（R34+R32）+ VB, Vgs<VCC, Rdson are with driving voltage
Increase and reduces, Pw=Vm*Id；
C、Vm>VCCB*R33/（R34+R32）+ VB, Vgs=VCC, Pw=Id*Id*Rdson, wherein Pw is power consumption, and Vgs is
MOSFET driving voltages, Id are conducting electric current.
In practical applications, it can ensure MOSFET its power consumption when no fully on by selecting rational parameter
Still meet heat consumption requirement.
To without in the anti-test process for filling ORING circuits, the backup mode of power supply 1+1 may be used（Two power supplys are simultaneously
Connection）, by the driving voltage of the MOSFET to two power supplys and being i.e. monitored the input terminal voltage of power cutoff can be with
Find out, the driving voltage of two power supplys can switch rapidly, MOSFET can smooth turn-on and turn-off, when input terminal drive
Shutdown operation is executed when voltage reduces rapidly rapidly, and then realizes and fills ORING circuits without anti-.
The scheme that above preferred embodiment provides is realized that MOSFET ORING circuits are compared with respect to controller, is taken
The progress of the MOSFET in ORING circuits can also be turned off without reverse current by obtaining, and reach small internal resistance in ORING circuits
The effect of the reliable turn-on and turn-off of MOSFET, improves the reliability of ORING circuits.
It can be seen from the above description that the present invention realizes following technique effect：Using passing through operational amplifier control
The mode of the turn-on and turn-off of field-effect transistor processed, solves field-effect transistor（MOSFET）On there are voltage instead fill and cause electricity
The problem of Source backups fail, the field-effect transistor in ORING circuits can be turned off without reverse current（MOSFET）, Jin Erda
To the effect of the reliability improved in ORING circuits.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of control device of communication power supply, which is characterized in that including：
Divider is formed by field-effect transistor and with the concatenated build-out resistor of the field-effect transistor, for electric from auxiliary
It is divided on source；
Operational amplifier is connect with the divider, for controlling the field-effect according to the voltage of the field-effect transistor
The turn-on and turn-off of transistor；
Alarm detection circuit is connect with the divider and the operational amplifier, for detecting the field effect transistor
When pipe turns off, the alarm signal that instruction present communications power supply is in stop working state is sent out；
Wherein, pass through the parameter of the setting accessory power supply and the build-out resistor so that the conducting of the field-effect transistor
Pressure drop is less than a positive value that can be arranged, wherein the positive value can effectively turn off the field-effect transistor.
2. the apparatus according to claim 1, which is characterized in that the field-effect transistor is metal oxide layer semiconductor field
Effect transistor MOSFET.
3. the apparatus of claim 2, which is characterized in that the positive input terminal of the operational amplifier and the MOSFET
Source electrode connection, the negative input end of the operational amplifier connect with the drain electrode of the MOSFET.
4. device according to claim 3, which is characterized in that the operational amplifier will be by described in detecting and obtaining
The mode that input terminal voltage between the source electrode and drain electrode of MOSFET is compared with preset voltage threshold, described in control
The on or off of MOSFET.
5. device according to claim 4, which is characterized in that be less than the feelings of the voltage threshold in the input terminal voltage
Under condition, the operational amplifier exports low level, turns off the MOSFET, and otherwise, the operational amplifier exports high level, protects
Hold the conducting state of the MOSFET.
6. a kind of control method of communication power supply, which is characterized in that including：
Operational amplifier controls the turn-on and turn-off of the field-effect transistor according to the voltage of field-effect transistor in divider,
Wherein, the divider is formed by the field-effect transistor and with the concatenated build-out resistor of the field-effect transistor,
For being divided from accessory power supply；
Alarm detection circuit sends out instruction present communications power supply in the case where detecting that the field-effect transistor has been switched off
Alarm signal in stop working state；
Wherein, pass through the parameter of the setting accessory power supply and the build-out resistor so that the conducting of the field-effect transistor
Pressure drop is less than a positive value that can be arranged, wherein the positive value can effectively turn off the field-effect transistor.
7. according to the method described in claim 6, it is characterized in that, the field-effect transistor is metal oxide layer semiconductor field
Effect transistor MOSFET.
8. the method according to the description of claim 7 is characterized in that the positive input terminal of the operational amplifier and the MOSFET
Source electrode connection, the negative input end of the operational amplifier connect with the drain electrode of the MOSFET.
9. according to the method described in claim 8, it is characterized in that, the operational amplifier is according to the field-effect transistor
Voltage controls the turn-on and turn-off of the field-effect transistor, including：
The operational amplifier obtains the input terminal voltage between the source electrode of the MOSFET, drain electrode by detection mode；
In the case where the input terminal voltage is less than preset voltage threshold, the operational amplifier exports low level,
The MOSFET is turned off, otherwise, the operational amplifier exports high level, keeps the conducting state of the MOSFET.
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| CN201210550212.8A CN103872906B (en) | 2012-12-18 | 2012-12-18 | The control device and method of communication power supply |
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| CN106199369B (en) * | 2016-08-31 | 2018-10-09 | 烽火通信科技股份有限公司 | A kind of method and system of OR-ing MOSFET On-line Fault Detections |
| CN109149988B (en) * | 2018-08-10 | 2021-04-20 | 爱士惟新能源技术(江苏)有限公司 | Auxiliary power supply |
| CN108957108B (en) * | 2018-08-17 | 2024-03-12 | 无锡麟力科技有限公司 | Commercial power outage detection circuit |
| CN110022140A (en) * | 2019-05-17 | 2019-07-16 | 石家庄高能电子科技有限公司 | ORing FET circuit and power supply and multiple-output electric power |
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| CN101114774A (en) * | 2006-07-24 | 2008-01-30 | 三星电子株式会社 | Power control apparatus and method thereof |
| CN101958576A (en) * | 2010-05-20 | 2011-01-26 | 福建星网锐捷网络有限公司 | Power supply redundancy parallel circuit and working method thereof |
| CN202094845U (en) * | 2011-03-24 | 2011-12-28 | 北京爱德发科技有限公司 | Device for managing power supply |
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| CN202260602U (en) * | 2011-10-14 | 2012-05-30 | 深圳市和浦泰能源科技有限公司 | Power-uninterruptible low-voltage output isolation circuit |
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| CN101114774A (en) * | 2006-07-24 | 2008-01-30 | 三星电子株式会社 | Power control apparatus and method thereof |
| CN101958576A (en) * | 2010-05-20 | 2011-01-26 | 福建星网锐捷网络有限公司 | Power supply redundancy parallel circuit and working method thereof |
| CN202094845U (en) * | 2011-03-24 | 2011-12-28 | 北京爱德发科技有限公司 | Device for managing power supply |
| CN202121498U (en) * | 2011-04-18 | 2012-01-18 | 深圳市金威源科技股份有限公司 | Switch power supply output MOS isolated control circuit |
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