CN103872148B - Surface coating structure and manufacturing method thereof - Google Patents
Surface coating structure and manufacturing method thereof Download PDFInfo
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- CN103872148B CN103872148B CN201210552092.5A CN201210552092A CN103872148B CN 103872148 B CN103872148 B CN 103872148B CN 201210552092 A CN201210552092 A CN 201210552092A CN 103872148 B CN103872148 B CN 103872148B
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- 239000011248 coating agent Substances 0.000 title claims abstract description 73
- 238000000576 coating method Methods 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 14
- 238000010521 absorption reaction Methods 0.000 claims abstract description 13
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 33
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 33
- 230000003139 buffering effect Effects 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 238000002425 crystallisation Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 241000209094 Oryza Species 0.000 claims description 9
- 235000007164 Oryza sativa Nutrition 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 9
- 239000013081 microcrystal Substances 0.000 claims description 9
- 235000009566 rice Nutrition 0.000 claims description 9
- 239000002002 slurry Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 230000002708 enhancing effect Effects 0.000 claims description 5
- 239000007790 solid phase Substances 0.000 claims description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910021426 porous silicon Inorganic materials 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 239000012528 membrane Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000009885 systemic effect Effects 0.000 description 1
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
- F24S70/25—Coatings made of metallic material
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/60—Details of absorbing elements characterised by the structure or construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/20—Details of absorbing elements characterised by absorbing coatings; characterised by surface treatment for increasing absorption
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/30—Auxiliary coatings, e.g. anti-reflective coatings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S80/00—Details, accessories or component parts of solar heat collectors not provided for in groups F24S10/00-F24S70/00
- F24S80/50—Elements for transmitting incoming solar rays and preventing outgoing heat radiation; Transparent coverings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
- F24S70/00—Details of absorbing elements
- F24S70/60—Details of absorbing elements characterised by the structure or construction
- F24S2070/62—Heat traps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
Abstract
The invention discloses a surface coating structure and a manufacturing method thereof, which are suitable for a solar thermoelectric system. The surface coating structure comprises a substrate, a buffer intermediate layer, an absorption layer and an anti-reflection layer. The substrate is made of high temperature resistant and high thermal conductivity material, and then a buffer medium layer, an absorption layer and an anti-reflection layer are deposited on the substrate by using a chemical vapor deposition method or a physical vapor deposition method. The buffer medium layer relaxes the thermal expansion stress between the substrate and the absorption layer; the absorption layer is a film layer for absorbing and capturing sunlight and has a three-dimensional porous light trapping structure with a light trapping effect; the anti-reflection layer reduces the reflectivity of sunlight, increases the proportion of light absorbed by the absorption layer and further improves the light trapping effect.
Description
Technical field
The invention relates to a kind of surface coating structure and manufacture method thereof, particularly a kind of surface coating structure and manufacture method thereof being applicable to solar heat electric system.
Background technology
At present, the price of international energy is surging gradually, and various countries are all devoted to the Study and appliance of solar energy, to obtain cheaply and the energy of non-environmental-pollution.The application of solar energy is mainly divided into solar cell and solar generator two class.The sunlight received can be directly changed into electric energy by solar cell, is suitable for sun-drenched area.Most solar cell can only convert the sunlight of 10 ~ 20% to electric energy, and other most of sunlight then cannot utilize and be converted to heat energy or radiation recurrence air.
Sunlight can absorb and be converted to heat energy by solar generator, kinetic energy is produced with the hydraulic fluid added in heat absorbing body, thus pushing generator generating, its generating efficiency can reach 30%, but still needs lifting sunlight absorption efficiency and thermal power transfer further to become the efficiency of electric energy.
Summary of the invention
In view of the problem of above-mentioned prior art, object of the present invention is just to provide a kind of surface coating structure and manufacture method thereof, to strengthen the efficiency of solar generator Systemic absorption solar energy.Further, the present invention more forms the three-dimensional porous light trapping structure of surface coating by wet etching or dry etching method, the sunlight making to inject surface coating structure is unlikely reflects disengaging easily, absorbs probability with the sunlight strengthening surface coating structure of the present invention.
According to object of the present invention, propose a kind of surface coating structure, comprise substrate, buffering intermediary layer, absorbed layer and anti-reflecting layer.Buffering intermediary layer is covered on substrate, and absorbed layer is covered on buffering intermediary layer, and absorbed layer becomes heat energy in order to absorb and to change sunlight, and buffering intermediary layer is in order to the thermal expansion of buffering because of the absorption substrate that causes of heat energy and absorbed layer.Anti-reflecting layer is covered on absorbed layer, in order to reduce sunlight reflectivity, increases absorbed layer and absorbs light ratio and promote sunken light effect further.
Further, the coefficient of heat conduction of substrate is that 30 (W/m.K) are to 430 (W/m.K).
Further, the material cushioning intermediary layer is porous silicon (porousSi), metal oxide, metal silicide or porous metal.
Further, absorbed layer is a three-dimensional porous shape light trapping structure.Further, the material of absorbed layer can be how rice crystal silicon (nanocrystallinesilicon, nc-Si), polysilicon (polycrystallinesilicon, poly-Si), microcrystal silicon (microcrystallinesilicon, μ c-Si), how rice, polycrystalline or microcrystalline silicon material, the how brilliant germanium (nanocrystallinegermanium of rice, nc-Ge), polycrystalline germanium (polycrystallinegermanium, or microcrystalline germanium (microcrystallinegermanium poly-Ge), μ c-Ge), but not as limit.
Further, the refractive index of anti-reflecting layer needs to be less than absorbed layer.
Wherein, anti-reflecting layer is the homosphere of single refractive index.
Wherein, anti-reflecting layer is the material layers of gradually changed refractive index, and it shifts gears as extremely increasing gradually with absorbed layer binding face by with air contact surfaces, but not as limit.
Wherein, anti-reflecting layer comprises the homogeneous internal layer of at least two different refractive indexes, and the sunlight absorption band of anti-reflecting layer is the summation of the sunlight absorption band of all homogeneous internal layers.
According to another object of the present invention, propose a kind of manufacture method of surface coating structure, the manufacture method of this surface coating structure comprises the following step: provide a substrate; Forming a buffering intermediary layer covers on substrate; Form an absorbed layer to cover on buffering intermediary layer, absorbed layer becomes heat energy in order to absorb and to change sunlight, and buffering intermediary layer has absorbed the thermal expansion of substrate that heat energy causes and absorbed layer in order to cushion; Form an anti-reflecting layer, be covered on absorbed layer.
Further, the method forming absorbed layer comprises the following steps: to utilize electricity slurry to strengthen chemical vapour deposition (CVD) (plasma-enhancedchemicalvapordeposition, PECVD) method or physical vapour deposition (PVD) (physicalvapordeposition, PVD) method grows a silica-based material layers or a germanium base material layers, such as amorphous silicon (a-Si) layer on buffering intermediary layer; Carry out a cycle of annealing, silica-based material layers or germanium base material layers are converted to polysilicon layer, microcrystal silicon layer, polycrystalline germanium layer or crystallite germanium layer; With wet etching or dry etching method process absorbed layer surface, to form three-dimensional porous shape light trapping structure.
Wherein, the method forming absorbed layer comprises the following steps: again to utilize electricity slurry enhancing chemical vapour deposition technique or physical vaporous deposition to grow a silica-based material layers or a germanium base material layers, such as amorphous silicon (a-Si) layer on buffering intermediary layer; With Wet-type etching or dry-etching process absorbed layer surface, to form three-dimensional porous shape light trapping structure; Carry out a cycle of annealing, silica-based material layers or germanium base material layers are converted to polysilicon layer, microcrystal silicon layer, polycrystalline germanium layer or crystallite germanium layer.
Further, the method forming anti-reflecting layer comprises the following step: utilization electricity slurry strengthens chemical vapour deposition (CVD) or physical vapour deposition (PVD) grows an amorphous material layers on absorbed layer, is jointly formed three-dimensional porous shape light trapping structure to make absorbed layer with the amorphous material layers of fitting on it; Carry out a cycle of annealing, amorphous material layers is converted to corresponding polycrystalline material layers or crystallite material layers.
Further, aforementioned formation absorbed layer method or formed anti-reflecting layer method in cycle of annealing be solid-phase crystallization method, laser crystallisation or metal induced crystallisation method.Solid-phase crystallization method is that the amorphous silicon membrane be deposited on substrate is placed in hundreds of degree temperature, carries out the tempering of a few hours, to increase crystallite dimension and to reduce crystal boundary number.Laser crystallisation utilizes laser light source, is incident in amorphous silicon membrane, makes it reach melt temperature and carries out nucleation and crystallization, and changes monocrystalline silicon or polysilicon into.Metal induced crystallisation method is the inducing materials using metals like gold, silver, aluminium or nickel etc. as crystallization, and the temperature making amorphous silicon transfer polysilicon to reduces.Its method, below amorphous silicon membrane, first deposits layer of metal layer, allows metal by heat energy, amorphous silicon is brought out for polysilicon.
From the above, according to surface coating structure of the present invention, it can have one or more following advantage:
(1) surface coating structure of the present invention has anti-reflecting layer, directly reflects disengaging, increase absorbed layer and absorb light ratio to reduce incident sunlight by absorbed layer.
(2) surface coating structure of the present invention has three-dimensional porous shape light trapping structure, and the sunlight injecting three-dimensional porous light trapping structure surface is easy to after one or multiple reflections as absorbed layer is absorbed.
(3) manufacture method of surface coating structure of the present invention comprises a cycle of annealing, absorbed layer and anti-reflecting layer is changed into polycrystalline or crystallite material, can reduce the average reflectance of absorbed layer and anti-reflecting layer further.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the first preferred embodiment of surface coating structure of the present invention.
Fig. 2 is the schematic diagram of the second preferred embodiment of surface coating structure of the present invention.
Fig. 3 is the schematic diagram of the 3rd preferred embodiment of surface coating structure of the present invention.
Fig. 4 is the sunlight absorption spectrum schematic diagram of the plural homogeneous internal layer anti-reflecting layer of surface coating structure of the present invention.
Fig. 5 is the manufacturing process schematic diagram of surface coating structure of the present invention.
Fig. 6 is the first manufacturing process schematic diagram of the absorbed layer of surface coating structure of the present invention.
Fig. 7 is the second manufacturing process schematic diagram of the absorbed layer of surface coating structure of the present invention.
Fig. 8 is the manufacturing process schematic diagram of the anti-reflecting layer of surface coating structure of the present invention.
Fig. 9 is the electron microscope scanning figure of the three-dimensional porous shape light trapping structure of surface coating structure of the present invention.
Figure 10 is the schematic diagram of the three-dimensional porous shape light trapping structure of the incident surface coating structure of the present invention of sunlight.
Figure 11 be the incident surface coating structure of the present invention of sunlight etching before and after reflectivity vs. wavelength relation schematic diagram.
Primary clustering symbol description is as follows:
10: surface coating structure
100: substrate
200: buffering intermediary layer
300: absorbed layer
400: anti-reflecting layer
410: anti-reflecting layer
420: anti-reflecting layer
430: the first homogeneous internal layers
440: the second homogeneous internal layers
500: three-dimensional porous shape light trapping structure
L1: the first path
L2: the second path
L3: the three path
S100 ~ S400, S310 ~ S330: step
S350 ~ S370, S410 ~ S430: step
Embodiment
The present invention coordinates accompanying drawing, and be described in detail as follows with the expression-form of preferred embodiment, and it is wherein used graphic, its purport is only the use of signal and aid illustration book, may not be actual proportions after the invention process and precisely configure, therefore should just appended graphic ratio is not with configuration relation is understood, the interest field limited the invention in actual enforcement, conjunction is first chatted bright.
The present invention discloses a kind of surface coating structure and manufacture method thereof, is applicable to solar heat electric system.This surface coating structure comprises substrate, buffering intermediary layer, absorbed layer and anti-reflecting layer.Surface coating structure of the present invention has low reflection and high-absorbility for sunlight, and operates under being applicable to high temperature, and can be used for the surface coating of the absorber of any shape.
Refer to Fig. 1, it is the schematic diagram of the first preferred embodiment of surface coating structure of the present invention, in order to the composition of display surface coating structure.In Fig. 1, surface coating structure 10 comprises substrate 100, buffering intermediary layer 200, absorbed layer 300 and anti-reflecting layer 400.Buffering intermediary layer 200 is covered on substrate 100, absorbed layer 300 is covered on buffering intermediary layer 200, absorbed layer 300 becomes heat energy in order to absorb and to change sunlight, buffering intermediary layer 200 in order to buffering because of the substrate 100 that absorbs heat energy and cause and the thermal expansion of absorbed layer 300.Anti-reflecting layer 400 is covered on absorbed layer 300, in order to reduce sunlight reflectivity, increases absorbed layer and absorbs light ratio and promote sunken light effect further.
Further, the coefficient of heat conduction of substrate 100 is that 30 (W/m.K) are to 430 (W/m.K).
Further, the material cushioning intermediary layer 200 is porous silicon, metal oxide, metal silicide or porous metal.
Further, absorbed layer 300 is three-dimensional porous shape light trapping structures 500.Further, the material of absorbed layer 300 can be how rice crystal silicon, polysilicon, microcrystal silicon, how rice, polycrystalline or microcrystalline silicon material, how rice brilliant germanium, polycrystalline germanium or microcrystalline germanium.
Further, the refractive index of anti-reflecting layer 400 need be less than absorbed layer.
Further, anti-reflecting layer 400 is the homosphere of single refractive index.
Refer to Fig. 2, it is the schematic diagram of the second preferred embodiment of surface coating structure of the present invention, has the surface coating structure of gradually changed refractive index anti-reflecting layer in order to show another kind.The material layers of the difference of the second preferred embodiment and the first preferred embodiment to be the anti-reflecting layer 410 of the second preferred embodiment be gradually changed refractive index, its gradually changed refractive index mode is extremely increase gradually with the binding face of absorbed layer 300 by with air contact surfaces, but not as limit.
Further, the refractive index of anti-reflecting layer 410 need be less than absorbed layer.
Refer to Fig. 3, it is the schematic diagram of the 3rd preferred embodiment of surface coating structure of the present invention, comprises the anti-reflecting layer structure of the homogeneous internal layer of two different refractive indexes in order to display.The difference of the 3rd preferred embodiment and the first preferred embodiment and the second preferred embodiment is that the anti-reflecting layer of the 3rd preferred embodiment comprises two different refractive index homogeneous internal layers.As shown in Figure 3, anti-reflecting layer 420 comprises the first homogeneous internal layer 430 and the second homogeneous internal layer 440, but not as limit.
Further, the refractive index of the first homogeneous internal layer 430 and the second homogeneous internal layer 440 all needs to be less than absorbed layer.
Refer to Fig. 4, it is two homogeneous internal layers of surface coating structure of the present invention and the sunlight absorption spectrum schematic diagram of anti-reflecting layer.The frequency spectrum of anti-reflecting layer 420, first homogeneous internal layer 430 and the second homogeneous internal layer 440 is shown in Fig. 4.Wherein, the sunlight absorption band of anti-reflecting layer 420 is the summation of the first homogeneous internal layer 430 and the second homogeneous internal layer 440.
Refer to Fig. 5, it is the manufacturing process schematic diagram of surface coating structure of the present invention.The steps flow chart of Fig. 5 is: S100: provide a substrate 100; S200: form a buffering intermediary layer 200 and cover on the substrate 100; S300: form an absorbed layer 300 and cover on buffering intermediary layer 200; S400: form an anti-reflecting layer 400, cover on absorbed layer 300.
See also Fig. 5 and Fig. 6, Fig. 6 is the first manufacturing process schematic diagram of the absorbed layer of surface coating structure of the present invention.The steps flow chart of Fig. 6 is: S310: utilize electricity slurry enhancing chemical vapour deposition technique or physical vaporous deposition to grow a silica-based material layers or a germanium base material layers on buffering intermediary layer 200; S320: carry out a cycle of annealing, is converted to polysilicon layer, microcrystal silicon layer, polycrystalline germanium layer or crystallite germanium layer by silica-based material layers or germanium base material layers; S330: with wet etching or dry etching method process absorbed layer surface, to form three-dimensional porous shape light trapping structure 500.
See also Fig. 5 and Fig. 7, Fig. 7 is the second manufacturing process schematic diagram of the absorbed layer of surface coating structure of the present invention.The steps flow chart of Fig. 7 is: S350: utilize electricity slurry enhancing chemical vapour deposition technique or physical vaporous deposition to grow a silica-based material layers or a germanium base material layers on buffering intermediary layer 200; S360: with Wet-type etching or dry-etching process absorbed layer 300 surface, to form three-dimensional porous shape light trapping structure 500; S370: carry out a cycle of annealing, is converted to polysilicon layer, microcrystal silicon layer, polycrystalline germanium layer or crystallite germanium layer by silica-based material or germanium base material layers.
See also Fig. 5 and Fig. 8, Fig. 8 is the manufacturing process schematic diagram of the anti-reflecting layer of surface coating structure of the present invention.The steps flow chart of Fig. 8 is: S410: utilization electricity slurry strengthens chemical vapour deposition (CVD) or physical vapour deposition (PVD) grows an amorphous material layers on absorbed layer 300, is jointly formed three-dimensional porous shape light trapping structure to make absorbed layer 300 with the amorphous material layers of fitting on it; S420: carry out a cycle of annealing, is converted to corresponding polycrystalline material layers or crystallite material layers by amorphous material layers.
See also Fig. 9 and Figure 10, Fig. 9 is the electron microscope scanning figure of the three-dimensional porous shape light trapping structure of surface coating structure of the present invention, Fig. 9 display forms height fluctuating surface through overetched rear surface coating structure.Figure 10 is the schematic diagram of the three-dimensional porous shape light trapping structure of the incident surface coating structure of the present invention of sunlight, and Figure 10 shows different incident path light and absorbed through reflecting at least one times and being refracted as surface coating structure.
As everyone knows, refraction and reflection likely occur during the interface of light by foreign medium, and the relative index of refraction between the incidence angle that the condition that refraction or reflection occur is light and two media is determined.
In Fig. 10, when sunlight is injected by the first path L1, after unirefringence, enter surface coating structure 10 and absorbed; When sunlight is injected by the second path L2, after two secondary reflections, enter surface coating structure 10 and absorbed; When sunlight is injected by the 3rd path L3, after first reflection once again incident three-dimensional porous shape light trapping structure time have some light to reflect to enter surface coating structure 10 and absorbed, when the light of its coreflection is also next time incident, refraction enters surface coating structure 10 and is absorbed.
Refer to Figure 11, its be the incident surface coating structure of the present invention of sunlight etching before and after reflectivity vs. wavelength relation schematic diagram.In fig. 11, sunlight wavelength scope is 350 ~ 800nm, the sunlight reflectivity of absorbed layer after etching compared with etching before nearly 35% gap.When anti-reflecting layer has attached on absorbed layer after the etching, its sunlight reflectivity can drop to less than 10%.
Further, the cycle of annealing in the manufacture method of prior absorbent layer 300 or the manufacture method of anti-reflecting layer 400 is solid-phase crystallization method, laser crystallisation or metal induced crystallisation method.Solid-phase crystallization method is that the amorphous silicon membrane be deposited on substrate is placed in hundreds of degree temperature, carries out the tempering of a few hours, to increase crystallite dimension and to reduce crystal boundary number.Laser crystallisation utilizes laser light source, is incident in amorphous silicon membrane, makes it reach melt temperature and carries out nucleation and crystallization, and changes monocrystalline silicon or polysilicon into.Metal induced crystallisation method is with the inducing materials as crystallization such as metals like gold, silver, aluminium or nickel, and the temperature making amorphous silicon transfer polysilicon to reduces.Its method, below amorphous silicon membrane, first deposits layer of metal layer, allows metal by heat energy, amorphous silicon is brought out for polysilicon.
For example, surface coating structure of the present invention is applicable to the solar heat electric system of normal temperature to 1400 ° C, is the sunlight of 300 ~ 800nm for wavelength, and surface coating structure of the present invention can reach the absorptivity of 92.5 ~ 97.5%.
In sum, surface coating structure of the present invention is when sunlight is incident to the anti-reflecting layer on surface, by the three-dimensional porous light trapping structure of surface coating structure and the material of cooperation anti-reflecting layer, to catch and to guide incident sunlight to be undertaken absorbing and being converted into heat energy by absorbed layer.Anti-reflecting layer and the absorbed layer of annealed program cooperatively interact, and have very high absorptivity for sunlight.Buffering intermediary layer can relax substrate and absorbed layer due to absorb heat energy cause different heat expansion to derive stress, make surface coating structure of the present invention be applicable to operate in the solar heat electric system of normal temperature to high temperature, and be applicable to the surface of the absorber of any shape.
Above-described preferred embodiment is only and technological thought of the present invention and feature is described, its object understands content of the present invention implementing according to this enabling the personage haveing the knack of this skill, when can not with restriction right of the present invention, namely every equalization done according to disclosed spirit changes or modifies, and must be encompassed in right of the present invention.
Claims (14)
1. a surface coating structure, the high temperature heat being applicable to solar thermal energy generating absorbs, and it is characterized in that, this surface coating structure comprises successively:
One substrate;
One buffering intermediary layer, covers on the substrate;
One absorbed layer, covers on this buffering intermediary layer, and this absorbed layer is a three-dimensional porous shape light trapping structure, and this absorbed layer absorbs and changes sunlight becomes a heat energy, and wherein this buffering intermediary layer cushions the thermal expansion of this substrate that this heat energy causes and this absorbed layer; And
One anti-reflecting layer, covers on this absorbed layer.
2. surface coating structure as claimed in claim 1, it is characterized in that, the coefficient of heat conduction of this substrate is 30W/m.K to 430W/m.K.
3. surface coating structure as claimed in claim 1, it is characterized in that, the material of this buffering intermediary layer is porous silicon, metal oxide, metal silicide or porous metal.
4. surface coating structure as claimed in claim 1, is characterized in that, the material of this absorbed layer be how rice crystal silicon, polysilicon, microcrystal silicon, how rice, polycrystalline or microcrystalline silicon material, how rice crystalline substance germanium, polycrystalline germanium or microcrystalline germanium.
5. surface coating structure as claimed in claim 1, it is characterized in that, the refractive index of this anti-reflecting layer is less than this absorbed layer.
6. surface coating structure as claimed in claim 5, it is characterized in that, this anti-reflecting layer is the homosphere of single refractive index.
7. surface coating structure as claimed in claim 5, it is characterized in that, this anti-reflecting layer is the material layers of a gradually changed refractive index.
8. surface coating structure as claimed in claim 5, it is characterized in that, this anti-reflecting layer comprises two homogeneous internal layers of at least different refractive index.
9. surface coating structure as claimed in claim 8, it is characterized in that, the sunlight absorption band of this anti-reflecting layer is the summation of the sunlight absorption band of this two homogeneous internal layer.
10. a manufacture method for surface coating structure, is characterized in that, it comprises the following steps:
One substrate is provided;
Form a buffering intermediary layer to cover on the substrate;
The absorbed layer forming a three-dimensional porous shape light trapping structure covers on this buffering intermediary layer, and this absorbed layer absorbs and changes sunlight becomes a heat energy, and wherein this buffering intermediary layer cushions the thermal expansion of this substrate that this heat energy causes and this absorbed layer; And
Form an anti-reflecting layer, cover on this absorbed layer.
The manufacture method of 11. surface coating structures as claimed in claim 10, it is characterized in that, the method forming this absorbed layer comprises the following steps:
Utilize electricity slurry enhancing chemical vapour deposition technique or physical vaporous deposition on this buffering intermediary layer, grow a silica-based material layers or a germanium base material layers;
Carry out a cycle of annealing, this silica-based material layers or germanium base material layers are converted to polysilicon layer, microcrystal silicon layer, polycrystalline germanium layer or crystallite germanium layer; And
With a wet etching or this absorbed layer surface of a dry etching method process, to form described three-dimensional porous shape light trapping structure.
The manufacture method of 12. surface coating structures as claimed in claim 10, it is characterized in that, the method forming this absorbed layer comprises the following steps:
Utilize electricity slurry enhancing chemical vapour deposition technique or physical vaporous deposition on this buffering intermediary layer, grow a silica-based material layers or a germanium base material layers;
With a Wet-type etching or this absorbed layer surface of a dry-etching process, to form described three-dimensional porous shape light trapping structure; And
Carry out a cycle of annealing, this silica-based material layers or germanium base material layers are converted to polysilicon layer, microcrystal silicon layer, polycrystalline germanium layer or crystallite germanium layer.
The manufacture method of 13. surface coating structures as claimed in claim 10, it is characterized in that, the method forming this anti-reflecting layer comprises the following step:
Utilization electricity slurry strengthens chemical vapour deposition (CVD) or physical vapour deposition (PVD) grows an amorphous material layers on this absorbed layer, and wherein this absorbed layer forms a three-dimensional porous shape light trapping structure jointly with this amorphous material layers of fitting on it; And
Carry out a cycle of annealing, this amorphous material layers is converted to a corresponding polycrystalline material layers or crystallite material layers.
The manufacture method of 14. surface coating structures as described in claim 11,12 or 13, it is characterized in that, this cycle of annealing is solid-phase crystallization method, laser crystallisation or metal induced crystallisation method.
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| TWI707169B (en) * | 2019-11-29 | 2020-10-11 | 大立光電股份有限公司 | Imaging lens assembly, camera module and electronic device |
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| TW200933905A (en) * | 2008-01-21 | 2009-08-01 | Cheng-Fu Yang | A multi-film, anti-reflection layer for a solar cell |
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| KR20100073836A (en) * | 2008-12-23 | 2010-07-01 | 주식회사 효성 | Thin film solar cell |
| CN102074596A (en) * | 2009-11-20 | 2011-05-25 | 正峰新能源股份有限公司 | Copper-indium-gallium-selenium solar battery and manufacturing method thereof |
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| TW201424021A (en) | 2014-06-16 |
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