CN103871932A - Light resistance reinforcement equipment and particulate pollutant eliminating method - Google Patents
Light resistance reinforcement equipment and particulate pollutant eliminating method Download PDFInfo
- Publication number
- CN103871932A CN103871932A CN201410097452.6A CN201410097452A CN103871932A CN 103871932 A CN103871932 A CN 103871932A CN 201410097452 A CN201410097452 A CN 201410097452A CN 103871932 A CN103871932 A CN 103871932A
- Authority
- CN
- China
- Prior art keywords
- exhaust
- reaction chamber
- state
- photoresistance
- lay out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The invention provides light resistance reinforcement equipment and a particulate pollutant eliminating method. A measuring device is arranged in a reaction chamber and can measure the state of an exhaust line and send out measurement information, and thus if the measurement information sent out by the measuring device displays that the state of the exhaust line is suitable for exhausting, gas is exhausted from an exhaust pipe; if the measurement information sent out by the measuring device displays that the state of the exhaust line is not suitable for exhausting, the state of the exhaust line is firstly adjusted to be suitable for exhausting, and the gas is exhausted from the exhaust pipe. Therefore the problem that the exhausting operation is executed when the state of the exhaust line is not suitable for exhausting, so that the gas carrying particulate pollutants cannot be well exhausted out of the reaction chamber, and a large number of particulate pollutants still exist in the reaction chamber is avoided; further the reliability of the light resistance reinforcement equipment and that of a light resistance reinforcement technology are improved.
Description
Technical field
The present invention relates to ic manufacturing technology field, particularly a kind of photoresistance ruggedized equipment and particle contamination method for removing.
Background technology
The manufacture of integrated circuit need to be carried out multiple different physics and chemistry technique on semiconductor (as silicon) substrate.Conventionally the technique of manufacturing integration circuit is divided into three classes---thin film deposition, pattern-forming and semiconductor doping.The film of conductor (as polysilicon, aluminium, the multiplex copper of technique recently) and insulator (oxide, silicon nitride and other megohmite insulants of various silicon) plays the effect of connection or isolated transistor and part thereof conventionally.Zones of different on wafer is optionally adulterated and can be made the conductivity of silicon with change in voltage.By creating the structure of these different constitute and functions, can produce millions of transistors and they are coupled together, thereby forming a modern microelectronics complicated circuit.Photoetching is the basis that semiconductor is manufactured, and we can regard the process of setting up 3-D graphic on substrate as photoetching.
Optical lithography is to be called by one the camera technique that the light-sensitive copolymer of photoresistance (photoresist) is material substantially.By exposing and developing, make photoresistance (photoresist) on substrate, form three-dimensional relief pattern.Typical optical lithography processes comprises the following steps: before substrate preparation, spin coating, exposure, dry, expose, expose post-drying, development and development post-drying.Wherein, before exposure, oven dry and exposure post-drying all can be called photoresistance reinforcing, and it is mainly to remove unnecessary solvent in removing photoresistance (photoresist) by techniques such as heating or ultraviolet (UV) irradiations that photoresistance is reinforced.In photoresistance reinforcement process, will produce some adverse consequencess, be mainly because the decomposition of photoresistance (photoresist) will produce particle contamination.For this reason, in prior art, will described particle contamination be excluded to reaction chamber by gas.
Concrete, please refer to Fig. 1, it is existing photoresistance ruggedized equipment structural representation.As shown in Figure 1, existing photoresistance ruggedized equipment 1 comprise reaction chamber 10, the air inlet pipe 11 being connected with described reaction chamber 10 and the blast pipe 12 being connected with described reaction chamber 10.Further, described photoresistance ruggedized equipment 1 also comprises and is positioned at the parts such as the wafer carrying head (not shown in figure 1) of described reaction chamber 10.In described reaction chamber 10, carry out after photoresistance reinforcement process, will in the following way the particle contamination of generation have been excluded to reaction chamber 10: clean air has passed into reaction chamber 10 by air inlet pipe 11; These gases process reaction chambers 10, and carry away the particle contamination in reaction chamber 10; Then gas is expelled to outside reaction chamber 10 via blast pipe 12, just can realize described particle contamination is excluded to reaction chamber 10 thus.
But, in above-mentioned photoresistance ruggedized equipment, after frequently can having carried out the particle contamination of generation being excluded to the operation of reaction chamber, in reaction chamber, still have the problem of a large amount of particle contaminations.
Summary of the invention
The object of the present invention is to provide a kind of photoresistance ruggedized equipment and particle contamination method for removing, to solve in prior art, after frequently can having carried out in photoresistance ruggedized equipment the particle contamination of generation being excluded to the operation of reaction chamber, in reaction chamber, still have the problem of a large amount of particle contaminations.
For solving the problems of the technologies described above, the invention provides a kind of photoresistance ruggedized equipment, described photoresistance ruggedized equipment comprises: reaction chamber, the air inlet pipe being connected with described reaction chamber and the blast pipe being connected with described reaction chamber, wherein, in described reaction chamber, be provided with measurement mechanism, described measurement mechanism can be measured the state of described exhaust lay out and send metrical information.
Optionally, in described photoresistance ruggedized equipment, described measurement mechanism is one or more transducer.
Optionally, in described photoresistance ruggedized equipment, also comprise control system, described control system can receive the metrical information that described measurement mechanism sends.
Optionally, in described photoresistance ruggedized equipment, the state of described exhaust lay out comprises the air pressure situation of described reaction chamber and/or the congestion of described blast pipe.
Optionally, in described photoresistance ruggedized equipment, in the time that the state of described exhaust lay out is not suitable for exhaust, described measurement mechanism sends the warning information that is not suitable for exhaust.
Optionally, in described photoresistance ruggedized equipment, the state of described exhaust lay out is not suitable for the air pressure that exhaust comprises described reaction chamber and stops up lower than preset value or described blast pipe.
Optionally, in described photoresistance ruggedized equipment, also comprise the control valve being arranged on described blast pipe, can change the state of described exhaust lay out by control valve described in degree of tightness.
The present invention also provides a kind of particle contamination method for removing of above-mentioned photoresistance ruggedized equipment, and described particle contamination method for removing comprises:
Pass into gas to air inlet pipe;
If the metrical information that measurement mechanism sends shows when the state of exhaust lay out is applicable to exhaust, from blast pipe Exhaust Gas.
Optionally, in described particle contamination method for removing, if when the state of the metrical information that measurement mechanism sends demonstration exhaust lay out is not suitable for exhaust, first adjust the state of exhaust lay out to being applicable to exhaust, then from blast pipe Exhaust Gas.
Optionally, in described particle contamination method for removing, adjust the state of exhaust lay out by degree of tightness control valve to being applicable to exhaust.
Inventor studies discovery, cause in prior art, after frequently can having carried out in photoresistance ruggedized equipment the particle contamination of generation being excluded to the operation of reaction chamber, in reaction chamber, still have the reason of the problem of a large amount of particle contaminations to be: in the time that execution particle contamination excludes the operation of reaction chamber, the state of exhaust lay out is not suitable for carrying out exhaust (carrying the gas of particle contamination) operation, concrete, there is the problems such as obstruction in the too low or blast pipe of the air pressure of reaction chamber.Thus, in the time that execution particle contamination excludes the operation of reaction chamber, can not well the air scavenge that carries particle contamination be gone out to reaction chamber, thereby cause still having in reaction chamber the problem of a large amount of particle contaminations to exist.
For this reason, the invention provides a kind of photoresistance ruggedized equipment and particle contamination method for removing, by being provided with measurement mechanism in reaction chamber, described measurement mechanism can be measured the state of exhaust lay out and send metrical information, if the metrical information that measurement mechanism sends thus shows when the state of exhaust lay out is applicable to exhaust, from blast pipe Exhaust Gas; If the metrical information that measurement mechanism sends shows when the state of exhaust lay out is not suitable for exhaust, first adjust the state of exhaust lay out to being applicable to exhaust, then from blast pipe Exhaust Gas.Thereby avoid in the time that the state of exhaust lay out is not suitable for exhaust and carried out bleeding, having caused well the air scavenge that carries particle contamination being gone out reaction chamber, in reaction chamber, having still had the problem of a large amount of particle contaminations.And then improve the reliability of photoresistance ruggedized equipment and photoresistance reinforcement process.
Accompanying drawing explanation
Fig. 1 is existing photoresistance ruggedized equipment structural representation;
Fig. 2 is the photoresistance ruggedized equipment structural representation of the embodiment of the present invention.
Embodiment
The photoresistance ruggedized equipment and the particle contamination method for removing that the present invention are proposed below in conjunction with the drawings and specific embodiments are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Inventor studies discovery, cause in prior art, after frequently can having carried out in photoresistance ruggedized equipment the particle contamination of generation being excluded to the operation of reaction chamber, in reaction chamber, still have the reason of the problem of a large amount of particle contaminations to be: in the time that execution particle contamination excludes the operation of reaction chamber, the state of exhaust lay out is not suitable for carrying out exhaust (carrying the gas of particle contamination) operation, concrete, there is the problems such as obstruction in the too low or blast pipe of the air pressure of reaction chamber.Thus, in the time that execution particle contamination excludes the operation of reaction chamber, can not well the air scavenge that carries particle contamination be gone out to reaction chamber, thereby cause still having in reaction chamber the problem of a large amount of particle contaminations to exist.
Therefore, the application's core concept is, by being provided with measurement mechanism in reaction chamber, described measurement mechanism can be measured the state of exhaust lay out and send metrical information, if the metrical information that measurement mechanism sends thus shows when the state of exhaust lay out is applicable to exhaust, from blast pipe Exhaust Gas; If the metrical information that measurement mechanism sends shows when the state of exhaust lay out is not suitable for exhaust, first adjust the state of exhaust lay out to being applicable to exhaust, then from blast pipe Exhaust Gas.Thereby avoid in the time that the state of exhaust lay out is not suitable for exhaust and carried out bleeding, having caused well the air scavenge that carries particle contamination being gone out reaction chamber, in reaction chamber, having still had the problem of a large amount of particle contaminations.And then improve the reliability of photoresistance ruggedized equipment and photoresistance reinforcement process.
Concrete, please refer to Fig. 2, the photoresistance ruggedized equipment structural representation that it is the embodiment of the present invention.As shown in Figure 2, described photoresistance ruggedized equipment 2 comprises: reaction chamber 20, the air inlet pipe 21 being connected with described reaction chamber 20 and the blast pipe 22 being connected with described reaction chamber 20, wherein, in described reaction chamber 20, be provided with measurement mechanism 23, described measurement mechanism 23 can be measured the state of described exhaust lay out and send metrical information.Wherein, described exhaust lay out mainly comprises described reaction chamber 20 and blast pipe 22.
In the embodiment of the present application, the state of described exhaust lay out comprises the air pressure situation of described reaction chamber 20 and/or the congestion of described blast pipe.Concrete, can be the atmospheric pressure value of described reaction chamber 20, also can be that the atmospheric pressure value of described reaction chamber 20 and the comparative result of a preset value or described blast pipe 22 are in obstruction or unimpeded state.Wherein, the part that described blast pipe 22 can be path one cross section in obstruction has tamper, for example, on path one cross section, has the tamper that exceedes 20%, thinks that blast pipe 22 is in stopping up; And for example, on path one cross section, have the tamper that exceedes 50%, think blast pipe 22 in stop up etc.
In the embodiment of the present application, described measurement mechanism 23 can be one or more transducer.For example, described measurement mechanism 23 can be made up of two transducers, and one of them transducer is in order to measure the air pressure of reaction chamber 20 and to send measured pressure information; Another transducer is in order to measure the congestion of blast pipe 22 and to send the information of measured blast pipe 22 congestions.In other embodiment of the application, described measurement mechanism 23 can be a transducer or three transducers, four sensors.
In the embodiment of the present application, described photoresistance ruggedized equipment 2 also comprises a control system (not shown in Fig. 2), and described control system can receive the metrical information that described measurement mechanism 23 sends.Concrete, described control system can comprise a display, in order to the metrical information that shows that described measurement mechanism 23 sends, to carry out artificial further judgement; Or described control system can comprise a siren, emit in alarm mode in order to the metrical information (particularly the state of exhaust lay out is not suitable for the information of exhaust) that described measurement mechanism 23 is sent.
In the embodiment of the present application, in the time that the state of described exhaust lay out is not suitable for exhaust, described measurement mechanism 23 sends the warning information that is not suitable for exhaust, and this warning information can be sent by described measurement mechanism 23; Also can be sent to described control system by described measurement mechanism 23, be sent by the siren in described control system.
In the embodiment of the present application, the state of described exhaust lay out is not suitable for the air pressure that exhaust comprises described reaction chamber 20 and stops up lower than preset value or described blast pipe 22.Wherein, described preset value can be an empirical value or an experiment value, for example, rule of thumb or experiment obtain being not suitable for exhaust under 1 atmospheric pressure, can be by 1 atmospheric pressure in described preset value location; In addition, the judgement that described blast pipe 22 stops up can be also an empirical value or experiment value, for example, rule of thumb or experiment obtain being not suitable for exhaust in the time having the tamper that exceedes 20% on blast pipe 22 path one cross sections, can think that be that blast pipe 22 stops up in the time having the tamper that exceedes 20% on blast pipe 22 path one cross sections.
In the embodiment of the present application, described photoresistance ruggedized equipment 2 also comprises the control valve 24 being arranged on described blast pipe 22, can change the state of described exhaust lay out by control valve described in degree of tightness 24.Thus, not only can find to be not suitable for exhaust, thereby passive avoid residual a large amount of particle contaminations in reaction chamber 20; Can also, by control valve 24 described in degree of tightness, change the state of exhaust lay out, so initiatively avoid residual a large amount of particle contaminations in reaction chamber 20.
Concrete, in the time that the air pressure of described reaction chamber 20 stops up lower than preset value or described blast pipe 22, by adjusting loose described control valve 24, the problem of stopping up lower than preset value or described blast pipe 22 with the air pressure that solves described reaction chamber 20, thereby change the state of described exhaust lay out, and then avoid residual a large amount of particle contaminations in reaction chamber 20.
Subsequent, the application will further introduce the particle contamination method for removing of above-mentioned photoresistance ruggedized equipment, specifically comprises: pass into gas to air inlet pipe 21; If the metrical information that measurement mechanism 23 sends shows when the state of exhaust lay out is applicable to exhaust, from blast pipe 22 Exhaust Gas.At this, by guaranteeing to be applicable to exhaust exhaust in the situation that, after can avoiding thus having carried out the particle contamination of generation being excluded to the operation of reaction chamber 20, in reaction chamber 20, still have the problem of a large amount of particle contaminations.
Further, if when the state of the metrical information that measurement mechanism 23 sends demonstration exhaust lay out is not suitable for exhaust, first adjust the state of exhaust lay out to being applicable to exhaust, then from blast pipe 22 Exhaust Gas.Same, at this, by guaranteeing exhaust in the situation that being applicable to exhaust, after can avoiding thus having carried out the particle contamination of generation being excluded to the operation of reaction chamber 20, in reaction chamber 20, still have the problem of a large amount of particle contaminations.Wherein, the state of adjustment exhaust lay out can be achieved by degree of tightness control valve 24 to being applicable to exhaust.
In sum, in the photoresistance ruggedized equipment and particle contamination method for removing providing in the embodiment of the present invention, by being provided with measurement mechanism in reaction chamber, described measurement mechanism can be measured the state of exhaust lay out and send metrical information, if the metrical information that measurement mechanism sends thus shows when the state of exhaust lay out is applicable to exhaust, from blast pipe Exhaust Gas; If the metrical information that measurement mechanism sends shows when the state of exhaust lay out is not suitable for exhaust, first adjust the state of exhaust lay out to being applicable to exhaust, then from blast pipe Exhaust Gas.Thereby avoid in the time that the state of exhaust lay out is not suitable for exhaust and carried out bleeding, having caused well the air scavenge that carries particle contamination being gone out reaction chamber, in reaction chamber, having still had the problem of a large amount of particle contaminations.And then improve the reliability of photoresistance ruggedized equipment and photoresistance reinforcement process.
Foregoing description is only the description to preferred embodiment of the present invention, the not any restriction to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, all belong to the protection range of claims.
Claims (10)
1. a photoresistance ruggedized equipment, it is characterized in that, comprise: reaction chamber, the air inlet pipe being connected with described reaction chamber and the blast pipe being connected with described reaction chamber, wherein, in described reaction chamber, be provided with measurement mechanism, described measurement mechanism can be measured the state of described exhaust lay out and send metrical information.
2. photoresistance ruggedized equipment as claimed in claim 1, is characterized in that, described measurement mechanism is one or more transducer.
3. photoresistance ruggedized equipment as claimed in claim 1, is characterized in that, also comprises control system, and described control system can receive the metrical information that described measurement mechanism sends.
4. photoresistance ruggedized equipment as claimed in claim 1, is characterized in that, the state of described exhaust lay out comprises the air pressure situation of described reaction chamber and/or the congestion of described blast pipe.
5. photoresistance ruggedized equipment as claimed in claim 4, is characterized in that, in the time that the state of described exhaust lay out is not suitable for exhaust, described measurement mechanism sends the warning information that is not suitable for exhaust.
6. photoresistance ruggedized equipment as claimed in claim 5, is characterized in that, the state of described exhaust lay out is not suitable for the air pressure that exhaust comprises described reaction chamber and stops up lower than preset value or described blast pipe.
7. photoresistance ruggedized equipment as claimed in claim 5, is characterized in that, also comprises the control valve being arranged on described blast pipe, can change the state of described exhaust lay out by control valve described in degree of tightness.
8. a particle contamination method for removing for the photoresistance ruggedized equipment as described in any one in claim 1～7, is characterized in that, comprising:
Pass into gas to air inlet pipe;
If the metrical information that measurement mechanism sends shows when the state of exhaust lay out is applicable to exhaust, from blast pipe Exhaust Gas.
9. particle contamination method for removing as claimed in claim 8, is characterized in that, if when the state of the metrical information that measurement mechanism sends demonstration exhaust lay out is not suitable for exhaust, first adjusts the state of exhaust lay out to being applicable to exhaust, then from blast pipe Exhaust Gas.
10. particle contamination method for removing as claimed in claim 9, is characterized in that, adjusts the state of exhaust lay out to being applicable to exhaust by degree of tightness control valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410097452.6A CN103871932A (en) | 2014-03-17 | 2014-03-17 | Light resistance reinforcement equipment and particulate pollutant eliminating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410097452.6A CN103871932A (en) | 2014-03-17 | 2014-03-17 | Light resistance reinforcement equipment and particulate pollutant eliminating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103871932A true CN103871932A (en) | 2014-06-18 |
Family
ID=50910337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410097452.6A Pending CN103871932A (en) | 2014-03-17 | 2014-03-17 | Light resistance reinforcement equipment and particulate pollutant eliminating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103871932A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109418657A (en) * | 2017-08-31 | 2019-03-05 | 王振牛 | A kind of method of the anti-oxidation brown stain of fruit juice pulp production line |
| CN111271607A (en) * | 2020-01-19 | 2020-06-12 | 北京北方华创微电子装备有限公司 | Overvoltage protection device and method for semiconductor equipment and abnormality detection method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1630934A (en) * | 2001-08-31 | 2005-06-22 | 株式会社东芝 | Manufacturing apparatus and method for a semiconductor device, and cleaning method for a semiconductor manufacturing device |
| CN201194220Y (en) * | 2008-04-30 | 2009-02-11 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor device manufacturing equipment |
| CN201194219Y (en) * | 2008-05-05 | 2009-02-11 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor device manufacturing equipment and system |
| US20120033340A1 (en) * | 2010-08-06 | 2012-02-09 | Applied Materials, Inc. | Electrostatic chuck and methods of use thereof |
| CN102881615A (en) * | 2011-07-14 | 2013-01-16 | 北京七星华创电子股份有限公司 | Heat treating equipment and method for semiconductor chip |
-
2014
- 2014-03-17 CN CN201410097452.6A patent/CN103871932A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1630934A (en) * | 2001-08-31 | 2005-06-22 | 株式会社东芝 | Manufacturing apparatus and method for a semiconductor device, and cleaning method for a semiconductor manufacturing device |
| CN201194220Y (en) * | 2008-04-30 | 2009-02-11 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor device manufacturing equipment |
| CN201194219Y (en) * | 2008-05-05 | 2009-02-11 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor device manufacturing equipment and system |
| US20120033340A1 (en) * | 2010-08-06 | 2012-02-09 | Applied Materials, Inc. | Electrostatic chuck and methods of use thereof |
| CN102881615A (en) * | 2011-07-14 | 2013-01-16 | 北京七星华创电子股份有限公司 | Heat treating equipment and method for semiconductor chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109418657A (en) * | 2017-08-31 | 2019-03-05 | 王振牛 | A kind of method of the anti-oxidation brown stain of fruit juice pulp production line |
| CN111271607A (en) * | 2020-01-19 | 2020-06-12 | 北京北方华创微电子装备有限公司 | Overvoltage protection device and method for semiconductor equipment and abnormality detection method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5795221B2 (en) | Pattern formation method | |
| WO2013048155A3 (en) | Method for forming fine patterns of semiconductor device using directed self assembly process | |
| US9087875B2 (en) | Pattern formation method for manufacturing semiconductor device using phase-separating self-assembling material | |
| US7567072B2 (en) | Real-time monitoring of particles in semiconductor vacuum environment | |
| US10073347B1 (en) | Semiconductor method of protecting wafer from bevel contamination | |
| Delgadillo et al. | Defect source analysis of directed self-assembly process (DSA of DSA) | |
| CN102023488A (en) | Method for monitoring energy deviation of exposure machine in photoetching technique | |
| CN104124137A (en) | Semiconductor device forming method | |
| CN103871932A (en) | Light resistance reinforcement equipment and particulate pollutant eliminating method | |
| US9087793B2 (en) | Method for etching target layer of semiconductor device in etching apparatus | |
| CN102376541A (en) | Method for adjusting uniformity of critical dimensions in integrated circuit manufacture | |
| CN103187246A (en) | Manufacturing method for hybrid lines | |
| CN101599434B (en) | Fabricating method of semiconductor device | |
| CN103187247B (en) | A kind of manufacture method mixing lines | |
| US7674350B2 (en) | Feature dimension control in a manufacturing process | |
| KR20220092844A (en) | Patterning method, lithography apparatus, and article manufacturing method | |
| KR101033354B1 (en) | Method for Forming Fine Patten of Semiconductor Device | |
| CN110634732A (en) | Photoetching process method | |
| TW201539534A (en) | Method of manufacturing semiconductor and exposure system | |
| CN102983067B (en) | The manufacture method of mixing lines | |
| CN102983066B (en) | Mixing line making method | |
| TWI634070B (en) | Method of producing an accurate alignment pattern on a wafer | |
| KR100827472B1 (en) | Method for forming overlay mark in semiconductor photolithograph process | |
| TW202331868A (en) | Method for measuring critical dimension | |
| KR101095045B1 (en) | Method of fabricating fine pattern of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140618 |