CN103864136A - Method for preparation of zinc oxide membrane by sol-gel process - Google Patents
Method for preparation of zinc oxide membrane by sol-gel process Download PDFInfo
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- CN103864136A CN103864136A CN201210531283.3A CN201210531283A CN103864136A CN 103864136 A CN103864136 A CN 103864136A CN 201210531283 A CN201210531283 A CN 201210531283A CN 103864136 A CN103864136 A CN 103864136A
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- sol
- zinc oxide
- zinc
- oxide film
- oxide membrane
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Abstract
The invention relates to a method for preparation of a zinc oxide membrane by a sol-gel process. The method includes the steps of: firstly dissolving zinc salts in solvents to obtain a mixed solution, with the zinc salts being zinc nitrate and zinc acetate, and the solvents being ethylene glycol and isopropyl alcohol, and adding diethanolamine into the mixed solution to obtain sol; and spreading the sol on a substrate, carrying out calcination at 400-500DEG C for 1-3h, and then performing post-treatment to obtain the zinc oxide membrane. The substrate is silicon or quartz. The zinc oxide membrane prepared by a sol-gel process is simple in process, and is economical and effective.
Description
Technical field
The present invention relates to a kind of preparation method of Zinc oxide film, relate in particular to a kind of sol-gel method and prepare Zinc oxide film.
Background technology
Nano zinc oxide material occupies very consequence in biosystem.Zinc oxide film is widely used in sensor field.In the existing method of preparing zinc oxide, self-assembly occupies great majority at present, but its preparation condition harshness.
Summary of the invention
The present invention is directed to above-mentioned the deficiencies in the prior art, provide a kind of sol-gel method of gentleness to prepare Zinc oxide film.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of sol-gel method is prepared Zinc oxide film, it is characterized in that, comprises the following steps:
First zinc salt is dissolved in solvent, described zinc salt is zinc nitrate, zinc acetate, and described solvent is ethylene glycol, Virahol, obtains mixed solution, in described mixed solution, adds diethanolamine to obtain colloidal sol;
Described colloidal sol is laid on matrix, 400-500 ℃ of roasting temperature 1-3h, then obtain Zinc oxide film through aftertreatment.
Described matrix is silicon or quartz.
The invention has the beneficial effects as follows: the Zinc oxide film that utilizes sol-gel method to prepare, technique is simple, economical and effective.
Embodiment
Below principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
A kind of sol-gel method is prepared Zinc oxide film, it is characterized in that, comprises the following steps:
First zinc salt is dissolved in solvent, described zinc salt is zinc nitrate, zinc acetate, and described solvent is ethylene glycol, Virahol, obtains mixed solution, in described mixed solution, adds diethanolamine to obtain colloidal sol;
Described colloidal sol is laid on matrix, 400-500 ℃ of roasting temperature 1-3h, then obtain Zinc oxide film through aftertreatment.
Described matrix is silicon or quartz.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (2)
1. sol-gel method is prepared a Zinc oxide film, it is characterized in that, comprises the following steps:
First zinc salt is dissolved in solvent, described zinc salt is zinc nitrate, zinc acetate, and described solvent is ethylene glycol, Virahol, obtains mixed solution, in described mixed solution, adds diethanolamine to obtain colloidal sol;
Described colloidal sol is laid on matrix, 400-500 ℃ of roasting temperature 1-3h, then obtain Zinc oxide film through aftertreatment.
2. a kind of sol-gel method according to claim 1 is prepared Zinc oxide film, it is characterized in that, described matrix is silicon or quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210531283.3A CN103864136A (en) | 2012-12-12 | 2012-12-12 | Method for preparation of zinc oxide membrane by sol-gel process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210531283.3A CN103864136A (en) | 2012-12-12 | 2012-12-12 | Method for preparation of zinc oxide membrane by sol-gel process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103864136A true CN103864136A (en) | 2014-06-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210531283.3A Pending CN103864136A (en) | 2012-12-12 | 2012-12-12 | Method for preparation of zinc oxide membrane by sol-gel process |
Country Status (1)
| Country | Link |
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| CN (1) | CN103864136A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104355331A (en) * | 2014-10-28 | 2015-02-18 | 常州市创捷防雷电子有限公司 | Biological environment-friendly method for preparing mono-dispersed nano-zinc oxide |
| CN107393654A (en) * | 2017-07-11 | 2017-11-24 | 扬州乾照光电有限公司 | A kind of method for the ZnO transparent conductive thin film that nanostructured is formed on substrate |
-
2012
- 2012-12-12 CN CN201210531283.3A patent/CN103864136A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104355331A (en) * | 2014-10-28 | 2015-02-18 | 常州市创捷防雷电子有限公司 | Biological environment-friendly method for preparing mono-dispersed nano-zinc oxide |
| CN107393654A (en) * | 2017-07-11 | 2017-11-24 | 扬州乾照光电有限公司 | A kind of method for the ZnO transparent conductive thin film that nanostructured is formed on substrate |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140618 |