CN103855280B - A kind of LED wafer level packaging methods - Google Patents
A kind of LED wafer level packaging methods Download PDFInfo
- Publication number
- CN103855280B CN103855280B CN201410038441.0A CN201410038441A CN103855280B CN 103855280 B CN103855280 B CN 103855280B CN 201410038441 A CN201410038441 A CN 201410038441A CN 103855280 B CN103855280 B CN 103855280B
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- Prior art keywords
- depression
- led wafer
- led
- transparent base
- conductive layer
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 19
- 239000004020 conductor Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 30
- 239000003292 glue Substances 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000012790 adhesive layer Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract description 12
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000741 silica gel Substances 0.000 description 12
- 229910002027 silica gel Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention is suitable for LED encapsulation technologies field, provides a kind of LED wafer level packaging methods, the described method comprises the following steps：The transparent base with depression is obtained, and makes the depression opening up, the depression bottom surface is set there are two the conductive layer being electrically isolated, and the conductive layer is extended down to the bottom surface of transparent base through depression side；LED wafer with positive and negative electrode electric conductor is placed in the depression, and the positive and negative electrode electric conductor is made to be fixed in corresponding conductive layer.So encapsulating the LED formed can be directly welded on application end substrate, subtract the thermal resistance of shelf layer needed for conventional encapsulation, radiate beneficial to chip PN junction, enhance LED product reliability.
Description
Technical field
The invention belongs to LED encapsulation technologies field more particularly to a kind of LED wafer level packaging methods.
Background technology
At present, the packaged type of white light LEDs product is to consolidate LED wafer by way of die bond glue sticking or eutectic welding
It being scheduled on stent, the anode of chip is connected to the anode of stent using gold thread, the cathode of chip is connected to the cathode of stent, then
Filling meets the fluorescent powder in aim colour area.Due to stent, the coefficient of thermal expansion of chip colloid is different, in stent, crystal-bonding adhesive, gold
Line, colloid etc. is susceptible to integrity problem.And LED support species is various, the material of bonding stent positive and negative anodes is PPA,
PCT, EMC material, in heat-resisting quantity, air-tightness has larger defect, and influences LED product reliability；Ceramics bracket have compared with
Good heat-resisting quantity and preferable air-tightness, but stent cost is close to chip cost, and ceramics bracket encapsulation LED systems take costliness,
Equipment investment is big, and production capacity is small.In short, the LED illumination product of support encapsulated structure shines in terms of reliability, service life to LED
Bright products substitution traditional lighting brings larger obstruction.
The content of the invention
The embodiment of the present invention is designed to provide a kind of LED wafer level packaging methods, the LED formed through this method encapsulation
It can be directly welded on application end substrate, subtract the thermal resistance of shelf layer needed for conventional encapsulation, radiate beneficial to chip PN junction, enhancing
LED product reliability.
The embodiment of the present invention is achieved in that a kind of LED wafer level packaging methods, comprises the following steps：
The transparent base with depression is obtained, is roughened in the upper surface of the transparent base and the bottom surface of the depression
Portion, the upper surface of the transparent base are shaped to cambered surface, and make the depression opening up, the depression bottom surface set there are two electricity
The conductive layer of isolation, the conductive layer are extended down to the bottom surface of transparent base through depression side；
LED wafer with positive and negative electrode electric conductor is placed in the depression, and is fixed in the positive and negative electrode electric conductor
Corresponding conductive layer；
In filling transparent silica gel or fluorescent glue in the depression, until the fluorescent glue is concordant with the bottom surface of LED wafer, and
Transparent silica gel described in solidify afterwards or fluorescent glue, the gap between the LED wafer and the base material depression are controllable uniform thickness
Space is spent, the transparent silica gel or fluorescent glue, which are filled in the space, can obtain fluorescent adhesive layer in uniform thickness.
The embodiment of the present invention first obtains the transparent base with depression, and makes the depression opening up, the depression bottom
Face is set there are two the conductive layer being electrically isolated, and the conductive layer is extended down to the bottom surface of transparent base through depression side；Then will have just,
The LED wafer of negative electrode conductor is placed in the depression, and the positive and negative electrode electric conductor is made to be fixed in corresponding conductive layer.So envelope
Filling the LED formed can be directly welded on application end substrate, the thermal resistance of shelf layer needed for conventional encapsulation subtracted, beneficial to chip PN
Knot heat dissipation, enhances LED product reliability.
Description of the drawings
Fig. 1 is the realization flow chart of LED wafer level packaging methods provided in an embodiment of the present invention；
Fig. 2 is the structure diagram of transparent base provided in an embodiment of the present invention (upper surface is plane)；
Fig. 3 is the structure diagram of transparent base provided in an embodiment of the present invention (upper surface is cambered surface)；
Fig. 4 is the structure diagram (the roughened processing in surface) of transparent base provided in an embodiment of the present invention；
Fig. 5 is that LED wafer grade encapsulation process schematic diagram provided in an embodiment of the present invention (is not filled by transparent silica gel or fluorescence
Glue)；
Fig. 6 is that the structure diagram through LED obtained by LED wafer level packaging methods provided in an embodiment of the present invention (is not filled out
Transparent silica gel or fluorescent glue are filled, LED upper surfaces are plane)；
Fig. 7 is LED wafer grade encapsulation process schematic diagram provided in an embodiment of the present invention (filling transparent silica gel or fluorescent glue
Afterwards)；
Fig. 8 is the structure diagram (filling through LED obtained by LED wafer level packaging methods provided in an embodiment of the present invention
Transparent silica gel or fluorescent glue, LED upper surfaces are plane)；
Fig. 9 is the structure diagram (filling through LED obtained by LED wafer level packaging methods provided in an embodiment of the present invention
Transparent silica gel or fluorescent glue, LED upper surfaces are cambered surface)；
Figure 10 is the structure diagram (filling through LED obtained by LED wafer level packaging methods provided in an embodiment of the present invention
Transparent silica gel or fluorescent glue, the roughened processing in LED upper surfaces).
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The embodiment of the present invention first obtains the transparent base with depression, and makes the depression opening up, the depression bottom
Face is set there are two the conductive layer being electrically isolated, and the conductive layer is extended down to the bottom surface of transparent base through depression side；Then will have just,
The LED wafer of negative electrode conductor is placed in the depression, and the positive and negative electrode electric conductor is made to be fixed in corresponding conductive layer.So envelope
Filling the LED formed can be directly welded on application end substrate, the thermal resistance of shelf layer needed for conventional encapsulation subtracted, beneficial to chip PN
Knot heat dissipation, enhances LED product reliability.
Fig. 1 shows the realization flow of LED wafer level packaging methods provided in an embodiment of the present invention, and details are as follows.
In step S101, the transparent base with depression is obtained, and makes the depression opening up, the bottom of the depression
Face is set there are two the conductive layer being electrically isolated, and side of the conductive layer through depression is extended down to the bottom surface of transparent base.
The embodiment of the present invention first obtains the transparent base 2 with depression 1, and makes the depression 1 opening up, the depression
1 bottom surface is set there are two the conductive layer 3 being electrically isolated from each other, and the conductive layer is extended down to the bottom surface of transparent base 2 through 1 side of depression.Its
In, the transparent base 2 can plant the high light transmittance material of ball bonding for solid-state, it is however preferred to have multiple sizes are big compared with LED wafer 4
Depression 1 transparent glass, ceramics, sapphire or carborundum, it is appropriate in the transparent glass, ceramics, sapphire or carborundum
Position plates conductive layer 3 or first plates conductive layer in entire transparent base bottom, then removes unwanted conductive layer.Institute
State LED wafer 4 it is packaged after transparent glass, ceramics, sapphire or carborundum are split, so as to obtain single led product,
As shown in figs. 2 to 4.It should be noted that the depression 1 is generally formed by method (such as etching) physically or chemically.Furthermore
The upper surface of the transparent base 2 may be molded to beneficial to promoting light taking-up and reducing the cambered surface of light-emitting angle, as shown in Figure 3.This
Outside, also roughening treatment can be carried out in the upper surface to the transparent base 2 and its bottom surface of depression 1 middle part in advance, to promote encapsulation
The light extraction efficiency and the uniformity of the LED formed, as shown in Figure 4.
In step s 102, the LED wafer with positive and negative electrode electric conductor is placed in the depression, and makes the positive and negative electrode
Electric conductor is fixed in corresponding conductive layer.
LED wafer 4 with positive and negative electrode electric conductor 6,7 is placed in each depression 1 of transparent base by the embodiment of the present invention, and is made
The positive and negative electrode electric conductor 6,7 is fixed in corresponding conductive layer 3.Wherein, the LED wafer 4 with positive and negative electrode electric conductor 6,7
It is formed by positive and negative electrode 8,9 of the so lder ball bonding in LED wafer 4；The LED wafer 4 through gold goal hot pressing in depression 1, each gold goal
It is fixed on corresponding conductive layer 3 and forms electrical connection, as shown in Figure 5,6.It is welded, greatly promoted with so lder ball bonding substitution gold thread herein
The reliability that horizontal formal dress chip electrode is connected with packaging body positive and negative electrode.Wherein, the LED wafer 4 is preferably to need bonding wire
Horizontal structure formal dress chip or vertical stratification formal dress chip.The LED 12 so obtained is free of fluorescent glue or transparent silica gel,
Luminescent color is LED wafer luminescent color, and made LED 12 is light-weight, backlight or/and illumination suitable for portable electronic products.
So realize LED wafer 4 (especially horizontal structure formal dress chip) without stent integration packaging, pass through big quantity set
Into production, the cost of LED product is reduced.Wherein, LED wafer 4 can be directly welded in transparent base 2 on application end substrate, subtracted
The thermal resistance of shelf layer in conventional encapsulation has been gone, the thermal conductivity for substantially reducing chip PN junction goes out, and promotes the thermal reliability of LED product,
The effectively junction temperature of control chip PN junction greatly promotes the efficiency and service life of LED component.In other words, welded in application end
This LED encapsulating products, 4 bottom of LED wafer are directly welded in heat sink, shorten heat conduction path, reduce thermal resistance, base material is double-end
Conductive layer is welded in wiring board counter electrode, and the separation of packaging thermoelectricity promotes the heat of product and the reliability of electricity.
As another embodiment of the present invention, it is described the LED wafer 4 with positive and negative electrode electric conductor 6,7 is placed in it is described recessed
Cave 1, and the step of the positive and negative electrode electric conductor 6,7 is made to be fixed in corresponding conductive layer 3 after further include：It is filled out in the depression 1
Transparent silica gel or fluorescent glue 11 are filled, until the fluorescent glue 11 is concordant with the bottom surface of LED wafer 4, and transparent silicon described in solidify afterwards
Glue or fluorescent glue 11, as shown in Fig. 7~10.Because the gap between LED wafer 3 and base material depression 1 is empty for controllable uniform thickness
Between, the transparent silica gel or fluorescent glue 11 are filled in this space, you can obtain fluorescent adhesive layer in uniform thickness, pass through chip blue light
Excitation, and then uniform white light is obtained, maximally utilise the blue light that chip is sent, there is no the uneven excitations of blue light to cause
Luminous flux it is low the phenomenon that, it is final to obtain maximum luminous flux.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of LED wafer level packaging methods, which is characterized in that the described method comprises the following steps：
The transparent base with depression is obtained, is roughened in the middle part of the upper surface of the transparent base and the bottom surface of the depression, it is described
The upper surface of transparent base is shaped to cambered surface, and makes the depression opening up, the depression bottom surface set there are two electricity every
From conductive layer, the conductive layer is extended down to the bottom surface of transparent base through depression side, wherein, the bottom surface of the transparent base
For the surface of the opening flush of the transparent base and the depression, the upper surface of the transparent base with it is described transparent
The bottom surface of base material is opposite；
LED wafer with positive and negative electrode electric conductor is placed in the depression, and the positive and negative electrode electric conductor is made to be fixed in accordingly
Conductive layer；
In filling fluorescent glue in the depression, until the fluorescent glue is concordant with the bottom surface of LED wafer, and fluorescence described in solidify afterwards
Glue, the gap between the LED wafer and the base material depression is controllable uniform thickness space, and the fluorescent glue is filled in institute
Fluorescent adhesive layer in uniform thickness can be obtained by stating in space, wherein, the bottom surface of the LED wafer is separate for the LED wafer
The surface of the bottom surface of the depression.
2. LED wafer level packaging methods as described in claim 1, which is characterized in that the transparent base is with multiple rulers
Transparent glass, ceramics, sapphire or the carborundum of the very little depression big compared with LED wafer, the conductive layer be plated on the transparent glass,
On any one described transparent base in ceramics, sapphire or carborundum；To the transparent glass after the LED wafer is packaged
Glass, ceramics, sapphire or carborundum are split, single led so as to obtain.
3. LED wafer level packaging methods as claimed in claim 2, which is characterized in that described with positive and negative electrode electric conductor
LED wafer is formed by positive and negative electrode of the so lder ball bonding in LED wafer；The LED wafer through gold goal hot pressing in depression, it is described
Gold goal is fixed on corresponding conductive layer and forms electrical connection.
4. LED wafer level packaging methods as claimed in claim 3, which is characterized in that the LED wafer is horizontal structure or hangs down
Straight structure formal dress chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038441.0A CN103855280B (en) | 2014-01-26 | 2014-01-26 | A kind of LED wafer level packaging methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410038441.0A CN103855280B (en) | 2014-01-26 | 2014-01-26 | A kind of LED wafer level packaging methods |
Publications (2)
| Publication Number | Publication Date |
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| CN103855280A CN103855280A (en) | 2014-06-11 |
| CN103855280B true CN103855280B (en) | 2018-05-18 |
Family
ID=50862687
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410038441.0A Active CN103855280B (en) | 2014-01-26 | 2014-01-26 | A kind of LED wafer level packaging methods |
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| CN (1) | CN103855280B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015109574A1 (en) * | 2014-01-26 | 2015-07-30 | 上海瑞丰光电子有限公司 | Led wafer-level encapsulation method |
| WO2022140980A1 (en) * | 2020-12-28 | 2022-07-07 | 华为技术有限公司 | Packaged chip and chip packaging method |
| CN114664195A (en) * | 2021-12-16 | 2022-06-24 | 深圳市万值科技有限公司 | LED transparent display and dynamic picture synchronous transmission display equipment and process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3942245A (en) * | 1971-11-20 | 1976-03-09 | Ferranti Limited | Related to the manufacture of lead frames and the mounting of semiconductor devices thereon |
| CN102738353A (en) * | 2011-04-12 | 2012-10-17 | 国碁电子(中山)有限公司 | Led packaging structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10122705B4 (en) * | 2000-05-11 | 2012-07-26 | Mitutoyo Corp. | Device with functional component and method for its production |
| US20040173808A1 (en) * | 2003-03-07 | 2004-09-09 | Bor-Jen Wu | Flip-chip like light emitting device package |
| US20080035942A1 (en) * | 2006-08-08 | 2008-02-14 | Lg Electronics Inc. | Light emitting device package and method for manufacturing the same |
| JP2008205138A (en) * | 2007-02-20 | 2008-09-04 | Misuzu Kogyo:Kk | Electronic optical device mounted body, and electronic optical apparatus incorporating it therein |
-
2014
- 2014-01-26 CN CN201410038441.0A patent/CN103855280B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3942245A (en) * | 1971-11-20 | 1976-03-09 | Ferranti Limited | Related to the manufacture of lead frames and the mounting of semiconductor devices thereon |
| CN102738353A (en) * | 2011-04-12 | 2012-10-17 | 国碁电子(中山)有限公司 | Led packaging structure |
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| CN103855280A (en) | 2014-06-11 |
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Effective date of registration: 20210119 Address after: 518000, 6th floor, building 1, Tianliao community, Gongming office, Guangming New District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Refond Optoelectronics Co.,Ltd. Address before: 201306 room 8650, building 1, 1758, Luchaogang Road, Luchaogang Town, Pudong New Area, Shanghai Patentee before: SHANGHAI RUIFENG OPTOELECTRONICS Co.,Ltd. |
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