CN103841718A - Spiral topology and matrix rectification structure thereof - Google Patents
Spiral topology and matrix rectification structure thereof Download PDFInfo
- Publication number
- CN103841718A CN103841718A CN201210522576.5A CN201210522576A CN103841718A CN 103841718 A CN103841718 A CN 103841718A CN 201210522576 A CN201210522576 A CN 201210522576A CN 103841718 A CN103841718 A CN 103841718A
- Authority
- CN
- China
- Prior art keywords
- light
- spiral
- emitting diode
- diode
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses spiral topology and a matrix rectification structure thereof, and belongs to the field of power electronics and LED light sources. The spiral topology and the matrix rectification structure thereof are characterized in that a plurality of diodes are connected end to end to form a spiral shape, a voltage node in one spiral is regarded as a vertex of a polygon, the diodes are regarded as the sides of the polygon, two or more spirals share one side, and the diodes where input nodes or output nodes located can be omitted. Compared with an alternating current LED chip based on a full-bridge rectification structure, the luminescent area of an alternating current LED based on the spiral topology and the matrix rectification structure thereof can be increased by around 25%, bilateral volt-ampere characteristic curves and reverse overvoltage protection are achieved among any nodes, and the defect that reverse breakdown of an ordinary LED occurs easily is overcome. Control technologies such as frequency modulation and bipolar pulse width modulation can be adopted, and a dimmable intelligent illumination system can be achieved easily. The spiral topology and the matrix rectification structure thereof are novel, save energy and are used for illumination.
Description
Technical field
The invention belongs to power electronics and LED light source field, particularly a kind of spiral topology for rectification and matrix rectifier structure thereof, is for the topological structure of rectification and the LED chip based on this structure and circuit specifically.
Background technology
Direct-current LED has following shortcoming:
1. current direct-current LED only can bear low-voltage direct, and high pressure or interchange all may make light-emitting diode damage, therefore all must coordinate DC converting circuit could be used for mains system on using.
2. low-voltage direct light-emitting diode forward conduction is luminous, is oppositely lowly pressed with leakage current but not luminous, light-emitting diode connection in series-parallel must be used and improves reverse breakdown voltage, to prevent the too high damage light-emitting diode of reverse voltage.
3. easily because static (ESD) makes moment, revers voltage rising causes damage to the LED chip of high-power low-voltage direct, need to utilize the diode of an additional reverse parallel connection to produce the effect of protective circuit.
4. multiple direct-current LED series connection can directly be received to 220V and exchange, but only there is monolateral volt-ampere characteristic; And due to shortcoming described in above-mentioned 2,3, seal in interchange, be easily reversed and puncture.
High-capacity LED or crystal grain use matrix-style to be arranged in die bond routing on metallic plate base or ceramic wafer base, but this mode needs precious metal material as connecting line, and powerful active heat removal system, or a wafer is divided into multiple micromeritics, each intercrystalline insulation, utilizes electric conducting material connection in series-parallel.A wafer is divided into after micromeritics, forward equivalent resistance R
simprove doubly (h is that wafer area is than upper micromeritics area) of about h, then by series connection, greatly improved forward region operating resistance (improving h2 doubly).Utilize this special construction, be directly connected to high-voltage alternating.
Summary of the invention
The object of this invention is to provide a kind of spiral topology and matrix rectifier structure thereof, it is characterized in that multiple diode head and the tail connect into helical form, voltage node in a spiral is as polygonal summit, diode is as polygonal limit, two or more spirals share on one side, and the diode that inputs or outputs limit, node place can omit.Between this structure and arbitrary node, all there is bilateral volt-ampere characteristic and reverse overvoltage protection, solved common LED and be easily reversed the defect puncturing.
The object of this invention is to provide a kind of high-voltage alternating LED chip based on spiral topology and matrix rectifier structure thereof, it is characterized in that, in described high-voltage alternating LED chip or on substrate, adopt one or more crystal grain or micromeritics string, and or connection in series-parallel be a light-emitting diode, it is a spiral that multiple light-emitting diode head and the tail are connected into ring, voltage node in a spiral is as polygonal summit, light-emitting diode is as polygonal limit, two or more spirals share on one side, and the light-emitting diode that inputs or outputs limit, node place can omit; The number of the crystal grain adopting for the light-emitting diode of rectification or area, crystal grain or the micromeritics parallel connection of micromeritics mates with operating current, for withstand voltage coupling of maximum reverse of light-emitting diode forward voltage with the rectification light-emitting diode of afterflow; The light-emitting diode operating current that is positioned at the rectification at topological edge is the half of the light-emitting diode operating current of other rectifications, and the number of the crystal grain that the LED current of the rectification at topological edge adopts or area, crystal grain or the micromeritics parallel connection of micromeritics mates with operating current.
The object of this invention is to provide and a kind ofly isolate topological high-voltage alternating LED chip based on spiral topology and matrix rectifier structure thereof, it is characterized in that, the whole high-voltage alternating LED chip based on spiral topology and matrix rectifier structure thereof is divided into polylith by described high-voltage alternating LED chip, and polylith is connected as a whole according to spiral topology and matrix rectifier structure thereof.In chip or on substrate for the light-emitting diode of rectification adopt one or more crystal grain (or micromeritics) string, and or connection in series-parallel, area, the number in parallel of crystal grain (or micromeritics) mate with operating current; In chip or on substrate for the light-emitting diode of afterflow adopt one or more crystal grain (or micromeritics) string, and or connection in series-parallel, the withstand voltage coupling of maximum reverse of its forward voltage and rectification light-emitting diode; The light-emitting diode of chip edge or share with the light-emitting diode at another chip block edge, or adopt crystal grain or the micromeritics of the less or less number in parallel of area when connection in series-parallel.
The object of this invention is to provide a kind of high-voltage alternating LED circuit based on spiral topology and matrix rectifier structure thereof, it is characterized in that, described high-voltage alternating LED circuit adopts spiral topology and matrix rectifier structure thereof, for the diode of rectification adopt one or more light-emitting diodes pipe strings, and or connection in series-parallel, its number in parallel mates with operating current; For the diode of afterflow adopt one or more light-emitting diodes pipe strings, and or connection in series-parallel, the withstand voltage coupling of maximum reverse of its forward conduction voltage drop and the diode of rectification; The diode at high-voltage alternating LED circuit edge, adopts the light-emitting diode of the less or less number parallel connection of operating current.Compared with adopting the AC LED chip of conventional full bridge topological structure, under identical LED chip area, light-emitting area can increase approximately 25%, effectively reduces cost.
The object of this invention is to provide a kind of high frequency LED circuit based on spiral topology and matrix rectifier structure thereof, it is characterized in that, described high-voltage alternating LED circuit adopts spiral topology and matrix rectifier structure thereof, adopt reverse recovery time short for the brachium pontis of rectification, the rectifier diode that PN junction electric capacity is little, diode for afterflow adopts one or more light-emitting diodes pipe strings, and or connection in series-parallel after, or be directly connected across the brachium pontis two ends of rectification, or after reverse parallel connection voltage stabilizing didoe, be connected across passive filter circuit output, the input of this passive filter circuit is connected across the brachium pontis two ends of rectification.Compared with adopting the AC LED of full-luminous diode, adopt the cost of rectifier diode lower than the cost that uses high-frequency rectification light-emitting diode, compared with adopting the full bridge rectifier of rectifier diode, rectifying bridge arm uses 37.5% approximately less, effectively reduces cost.
Brief description of the drawings
Fig. 1 is luminous spiral topology and the matrix rectifying junction composition thereof revolving containing N × 1.
Fig. 2 is spiral topology and the matrix rectifying junction composition thereof revolving containing N × M.
Fig. 3 is containing 4 × 2 spiral topologys of revolving and matrix rectifying junction composition thereof.
Fig. 4 is that 4 × 4 spiral topologys of revolving and matrix rectifier structure thereof isolate topological diagram.
Fig. 5 is the high frequency LED circuit schematic diagram based on spiral topology and matrix rectifier structure thereof.
Embodiment
The invention provides a kind of spiral topology and matrix rectifier structure thereof and a kind of LED chip and circuit based on spiral topology and matrix rectifier structure thereof.Below in conjunction with accompanying drawing, the course of work of this structure is elaborated.Following explanation is only exemplary, instead of in order to limit the scope of the invention and to apply.
Spiral topology and matrix rectifier structure thereof that embodiment 1 revolves containing N × 1
Spiral topology and the matrix rectifying junction composition thereof of Fig. 1 for revolving containing N × 1, N × 1 is for adopting N row spiral, spiral topology and matrix rectifier structure thereof that 1 spiral of every row forms.
Fig. 2 is spiral topology and the matrix rectifying junction composition thereof revolving containing N × M.N is the columns of adopted spiral, M is the number that every row adopt spiral, N × M spiral according to the voltage node in a spiral as polygonal summit, diode is as polygonal limit, two or more spirals share on one side, input or output the omissible rule composition spiral topology of diode and the matrix rectifier structure thereof on limit, node place.
Embodiment 3 is containing 4 × 2 spiral topologys of revolving and matrix rectifier structure thereof
Fig. 3 is containing 4 × 2 spiral topologys of revolving and matrix rectifying junction composition thereof.In the spiral of Diode1, Diode2 and Diode3 composition, Diode3 is rectifier diode, current flowing is the twice of sustained diode iode2, Diode1 is rectifier diode but is positioned at topological top edge, current flowing is identical with sustained diode iode2, the half of Diode1, in like manner in this topology current flowing be other diode twices be Diode3, Diode4, Diode7, Diode10.This topology course of work is: in the time that input " In " voltage is forward, the electric current that diode Diode1, Diode15, Diode2, Diode5, Diode12, Diode11, Diode8, Diode17, Diode9, Diode13 flow through is the half of Diode4 and Diode10, all the other not conductings of diode; In the time that input " Out " voltage is forward, the electric current that Diode6, Diode18, Diode9, Diode13, Diode12, Diode11, Diode14, Diode16, Diode5, Diode2 flow through is the half of Diode7 and Diode3, all the other not conductings of diode.
The high-voltage alternating LED chip of embodiment 4 based on spiral topology and matrix rectifier structure thereof
Using the encapsulating structure as LED chip containing 4 × 2 spiral topologys of revolving and matrix rectifier structure thereof of embodiment 3, light-emitting diode Diode1, Diode14, Diode8, Diode6, Diode15, Diode16, Diode17, Diode18 chip area is the half of other crystal grain, other light-emitting diode has identical chip area, rectification light-emitting diode Diode3, Diode4, Diode7, Diode10 operating current is the twice of afterflow light-emitting diode operating current, but it is the half of afterflow light-emitting diode operating voltage that work is pressed, Gu Diode3, Diode4, Diode7, Diode10 can regard the diode of two parallel connections as, afterflow light-emitting diode can be regarded the diode of two series connection as, the rectification light-emitting diode Diode1, Diode14, Diode8, Diode6, Diode15, Diode16, Diode17, the Diode18 operating current that are positioned at topological edge are identical with afterflow light-emitting diode operating current, but it is the half of afterflow light-emitting diode operating voltage that work is pressed, and can regard single diode as.Instantaneous light emission area is conducting light-emitting diode area and the ratio of total light-emitting diode area 5: 7, in any one spiral arbitrarily light-emitting diode all with other 2 or 3 light-emitting diode reverse parallel connections of connecting (for example: Diode1 and the Diode2 connecting and Diode3 reverse parallel connection, Diode2 and the Diode14 connecting, Diode12 and Diode4 reverse parallel connection), the reverse voltage of rectification light-emitting diode is about 3 times to 5 times that forward PN junction is pressed, reverse breakdown voltage can not exceed about 15V, the reverse voltage of afterflow light-emitting diode is about 2 times to 4 times that forward PN junction is pressed, reverse breakdown voltage can not exceed about 12V, visible AC LED chip is difficult for being reversed and punctures.
Embodiment 5 isolates topological high-voltage alternating LED chip based on spiral topology and matrix rectifier structure thereof
Fig. 4 is that 4 × 4 spiral topologys of revolving and matrix rectifier structure thereof isolate topological diagram, wherein A, B, C, D, E are the voltage nodes that isolates topological 1 top edge, A ', B ', C ', D ', E ' are the voltage nodes that isolates topological 2 lower limbs, isolate topological 2 lower limbs and isolate the shared one group of light-emitting diode of topological 1 top edge.
4 × 4 spiral topologys of revolving and matrix rectifier structure thereof are divided into and isolate topology 1 and isolate 2 two of topologys, be encapsulated in respectively in two chip blocks, two chip chambers connect according to 4 × 4 spiral topologys of revolving and matrix rectifier structure thereof, and isolate topological 2 lower limbs and share light-emitting diode Diode1, Diode14, Diode8, Diode6 with isolating topological 1 top edge, two chips are connected with E ' with D ', E with C ', D with B ', C with A ', B according to A.In the spiral being made up of Diode1, Diode2, Diode3, the operating current of Diode1, Diode3 is the twice of Diode2, is in like manner the twice for the LED current of afterflow for the light-emitting diode of rectification in this structure.All light-emitting diodes adopt same die area, and instantaneous light emission area is conducting light-emitting diode area and the ratio of total light-emitting diode area 5: 7.Approximately 9～15V of the reverse maximum voltage of rectification light-emitting diode, approximately 6～12V of the reverse maximum voltage of afterflow light-emitting diode.
The high frequency LED circuit of embodiment 6 based on spiral topology and matrix rectifier structure thereof
Fig. 5 is the high frequency LED circuit schematic diagram based on spiral topology and matrix rectifier structure thereof; wherein Diode1, Diode2, Diode3, Diode4, Diode5, Diode6, Diode7, Diode8 are the rectifier diodes that reverse recovery time is short, PN junction electric capacity is little; filtering adopts capacitor C 1, C2, C3 as simple filter circuit, and voltage stabilizing didoe D1, D2, D3 are as the protective circuit of direct-current LED.
The above; only for preferably embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (5)
1. a spiral topology and matrix rectifier structure thereof, it is characterized in that multiple diode head and the tail connect into helical form, node in a spiral is as polygonal summit, diode is as polygonal limit, two or more spirals share on one side, and the diode that inputs or outputs limit, node place can omit.
2. the high-voltage alternating LED chip based on spiral topology and matrix rectifier structure thereof, it is characterized in that, in described high-voltage alternating LED chip or on substrate, adopt one or more crystal grain or micromeritics string, and or connection in series-parallel be a light-emitting diode, it is a spiral that multiple light-emitting diode head and the tail are connected into ring, voltage node in a spiral is as polygonal summit, light-emitting diode is as polygonal limit, two or more spirals share on one side, and the light-emitting diode that inputs or outputs limit, node place can omit; The number of the crystal grain adopting for the light-emitting diode of rectification or area, crystal grain or the micromeritics parallel connection of micromeritics mates with operating current, for withstand voltage coupling of maximum reverse of light-emitting diode forward voltage with the rectification light-emitting diode of afterflow.
3. one kind is isolated topological high-voltage alternating LED chip based on spiral topology and matrix rectifier structure thereof, it is characterized in that, the high-voltage alternating LED chip based on spiral topology and matrix rectifier structure thereof described in claim 2 is divided into polylith by described high-voltage alternating LED chip, every chip or the substrate that difference is corresponding different, in chip or on substrate for the light-emitting diode of rectification adopt one or more crystal grain (or micromeritics) string, and or connection in series-parallel, area, the number in parallel of crystal grain (or micromeritics) mate with operating current; In chip or on substrate for the light-emitting diode of afterflow adopt one or more crystal grain (or micromeritics) string, and or connection in series-parallel, the withstand voltage coupling of maximum reverse of its forward voltage and rectification light-emitting diode; The light-emitting diode of chip edge or share with the light-emitting diode at another chip block edge, or adopt crystal grain or the micromeritics of the less or less number in parallel of area when connection in series-parallel.
4. the high-voltage alternating LED circuit based on spiral topology and matrix rectifier structure thereof, it is characterized in that, spiral topology and matrix rectifier structure thereof described in described high-voltage alternating LED circuit employing claim 1, for the diode of rectification adopt one or more light-emitting diodes pipe strings, and or connection in series-parallel, its number in parallel mates with operating current; For the diode of afterflow adopt one or more light-emitting diodes pipe strings, and or connection in series-parallel, the withstand voltage coupling of maximum reverse of its forward conduction voltage drop and the diode of rectification; The diode at high-voltage alternating LED circuit edge, adopts the light-emitting diode of the less or less number parallel connection of operating current.
5. the high frequency LED circuit based on spiral topology and matrix rectifier structure thereof, it is characterized in that, described high-voltage alternating LED circuit adopts spiral topology and matrix rectifier structure thereof, brachium pontis for rectification adopts the rectifier diode that reverse recovery time is short, PN junction electric capacity is little, for the brachium pontis of afterflow adopt one or more light-emitting diodes pipe strings, and or connection in series-parallel after, or be directly connected across the brachium pontis two ends of rectification, or after reverse parallel connection voltage stabilizing didoe, being connected across passive filter circuit output, the input of this passive filter circuit is connected across the brachium pontis two ends of rectification.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210522576.5A CN103841718A (en) | 2012-11-23 | 2012-11-23 | Spiral topology and matrix rectification structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210522576.5A CN103841718A (en) | 2012-11-23 | 2012-11-23 | Spiral topology and matrix rectification structure thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103841718A true CN103841718A (en) | 2014-06-04 |
Family
ID=50804728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210522576.5A Pending CN103841718A (en) | 2012-11-23 | 2012-11-23 | Spiral topology and matrix rectification structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103841718A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258921A (en) * | 2018-03-22 | 2018-07-06 | 奥克斯空调股份有限公司 | Rectifier bridge parallel connection topological structure and power device |
-
2012
- 2012-11-23 CN CN201210522576.5A patent/CN103841718A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258921A (en) * | 2018-03-22 | 2018-07-06 | 奥克斯空调股份有限公司 | Rectifier bridge parallel connection topological structure and power device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103188845B (en) | The LED light emission device of alternating current Direct driver | |
| CN102026437A (en) | Modular alternating current light-emitting diode (LED) luminous circuit | |
| CN201386933Y (en) | ACLED illuminating light source | |
| CN103220868A (en) | High-power light emitting diode (LED) switching power supply | |
| CN103841718A (en) | Spiral topology and matrix rectification structure thereof | |
| CN103716960A (en) | Drive circuit for high-power LED light source | |
| CN102149233B (en) | LED (Light Emitting Device) light source control device | |
| CN202889695U (en) | High-frequency AC LED lamp for illumination | |
| CN201731335U (en) | Alternating current direct-drive LED lamp tube | |
| CN102638926A (en) | High-voltage alternating-current LED (light-emitting diode) lamp based on full-bridge topological packaging structure | |
| CN103200729B (en) | Light emitting diode (LED) luminous device directly driven in constant current by alternating current | |
| CN103188850B (en) | The White LED light-emitting device of alternating current Direct driver | |
| CN202938260U (en) | High-power alternating current LED (Light Emitting Diode) light source | |
| CN202269051U (en) | LED tube | |
| CN205859624U (en) | Photo engine LED filament | |
| CN204795714U (en) | LED lamp protection circuit | |
| CN204069450U (en) | A kind of multiple-channel output height step-down LED constant current driving power | |
| CN101839458A (en) | AC LED lighting source | |
| CN203289688U (en) | High-voltage LED lamp bead driving power supply controlled by sectional type sinusoidal current | |
| CN203325905U (en) | AC drive COB-packaged LED module | |
| CN103687141A (en) | Helical topological structure for alternating current LED lamp | |
| CN203039944U (en) | AC LED module and LED circuit | |
| CN202907287U (en) | LED silicon-controlled light-dimming driving circuit based on IW3602 chip | |
| CN203289687U (en) | High-voltage LED lamp bead driving power supply controlled by sectional type negative sinusoidal current | |
| CN201509334U (en) | Modular type alternating current LED luminous circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140604 |