CN103840003B - The double grid grapheme transistor and preparation method thereof being gate medium with aluminium sesquioxide - Google Patents
The double grid grapheme transistor and preparation method thereof being gate medium with aluminium sesquioxide Download PDFInfo
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000003708 ampul Substances 0.000 claims abstract description 31
- 239000010453 quartz Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 18
- VZGDMQKNWNREIO-UHFFFAOYSA-N carbon tetrachloride Substances ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 38
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 238000000231 atomic layer deposition Methods 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 11
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000003153 chemical reaction reagent Substances 0.000 claims description 8
- 230000001351 cycling effect Effects 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 238000010926 purge Methods 0.000 claims description 8
- 230000003252 repetitive effect Effects 0.000 claims description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 8
- 239000003518 caustics Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 239000000356 contaminant Substances 0.000 claims description 4
- 238000011109 contamination Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite alkene Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
Abstract
The invention discloses a kind of double grid grapheme transistor and preparation method thereof being gate medium with aluminium sesquioxide, mainly solve grapheme transistor top-gated electrolyte in prior art preparation and cause graphene-channel carrier mobility to reduce and the problem of carrier scattering.It is structurally characterized in that: graphene-channel both sides are respectively provided with a gate electrode, forms double-gate structure；Its making step is: 1. one layer of Al of SiC sample surface deposition after cleaning2O3, and carve structure graph thereon；2. the print after etching is placed in quartz ampoule, passes into CCl4React generation carbon film with SiC, and be placed in argon and anneal generate Graphene, and etch the Al at 60-400nm place, graphene-channel both sides2O3, form grid groove；3. on print, deposit metal and be carved into the metal contact of transistor.The double grid grapheme transistor that the present invention makes can be effectively improved carrier mobility and the grid modulation capability to channel current.
Description
Technical field
The invention belongs to microelectronics technology, relate to semiconductor device preparation method, specifically with Al2O3For the double grid grapheme transistor preparation method of gate medium, can be used for large scale integrated circuit and make.
Technical background
Along with people are to high-performance, high reliability, the raising of low power consumption equipment demand, become more to pay close attention to devices on integrated circuits characteristic.Graphene, this material being made up of two-dimensional hexagonal carbon lattice, owing to its prominent electricity structure characteristic is after the love that disappeared by the two of Univ Manchester UK scientist An Delie Jim and Ke Siteyanuowo in 2004 finds to obtain, namely it is taken as manufacturing the candidate materials of high performance device.
Within 2005, Geim seminar finds with Kim seminar, and under room temperature, Graphene has about 10cm2The high carrier mobility of/V s, is about 10 times of commercial silicon chip, and the impact by temperature and doping effect is only small, and this is Graphene as the most prominent advantage of nanometer electronic device.Higher carrier mobility and less contact resistance contribute to the reduction devices switch time further, and the frequency response characteristic of superelevation is another significant advantage of graphene-based electronic device.Additionally, different from the silicon used in current electronic device and metal material, even if Graphene is reduced to nanoscale, good stability and electric property can be kept equally, make exploration single-electron device be possibly realized.Recently, Geim seminar utilizes beamwriter lithography and dry etching will be processed into quantum dot, lead-in wire and grid with piece of graphite alkene, obtain operable Graphene single electron field effect transistor under room temperature, solve current single electron field effect transistor due to what the unstability of nanometer sized materials was brought and use temperature limited problem.Holland scientist then reports first Graphene superconducting field-effect pipe, it has been found that when charge density is zero, Graphene still can transmit certain electric current, and the nanoscale superconductive electronic device fast for low energy consumption, switch time brings breakthrough.
Document about the device of Graphene emerges in multitude recently, has a lot of report about Graphene in electric capacity, solaode, transparency electrode.Scene effect transistor FET application aspect also has a lot of report, such as backgate graphene field effect transistor BG-GFET, top-gated graphene field effect transistor TG-GFET etc..In the preparation technology of these graphene field effect transistors GFET, it is necessary to Graphene is deposited or transfers in specific Si or SiC substrate.And in existing top-gated technique, owing to top gate medium can introduce more scattering source, simultaneously in manufacturing process, graphene film is also highly susceptible to destroy, cause front and back scattering so that the mobility of top-gated TG-GFET is remarkably decreased.
International Business Machine Corporation (IBM) IBM declares in research center to work out graphene field effect transistor fastest in the world, and operating frequency reaches 26GHz, and this is the fastest operating frequency of the grapheme transistor measured so far.IBM represents that the grid grapheme transistor at top is made by SOI wafer, all has significantly high operating frequency under different grid voltages and length.Result of study shows, along with increasing of frequency, the response curve of conventional transistor is followed in the decline of grapheme transistor current gain equally.And square being inversely proportional to of most higher cutoff frequency and grid length, reach 26GHz when grid length is 150nm.In order to realize being operated in the transistor of THz frequency range, it is necessary to reduce grid further long.
Along with the reduction of transistor gate length, in order to ensure device electric fields bulk properties, according to steady electric field rule in proportion, thickness of dielectric layers must reduce according to same ratio.Currently, SiO is widely used2Gate medium as field effect transistor.When its thickness is reduced to nanometer scale, pass through SiO2Leakage current with thickness reduce exponentially increase, so huge leakage current badly influences device performance, makes SiO2Insulating effect can not be played, ultimately result in SiO2It is not suitable anymore for as the gate medium of field-effect transistor FET.
Summary of the invention
Present invention aims to the deficiency of above-mentioned prior art, it is proposed to a kind of be gate medium with aluminium oxide double grid grapheme transistor and preparation method thereof, to avoid ultra-thin gate dielectric SiO2The leakage problem that tunnelling causes；Exempt the etching process to Graphene in manufacturing transistor, effectively suppress scattering effect；Improve the grapheme transistor grid modulating action to channel carrier concentration simultaneously.
For achieving the above object, the double grid grapheme transistor of the present invention, including: graphene-channel, electrode, gate dielectric layer and SI-substrate, it is characterized in that, the both sides of graphene-channel are respectively provided with a gate electrode, it is respectively provided with one layer of gate dielectric layer between each gate electrode and graphene-channel, forms double grid electrode structure.
As preferably, described gate medium adopts Al2O3Material, to thicken the physical thickness of gate dielectric layer, it is prevented that grid puncture.
As preferably, between described each gate electrode and graphene-channel, it is spaced apart 60-400nm.
As preferably, described SI-substrate adopts semi-insulating 4H-SiC or 6H-SiC substrate.
For achieving the above object, the preparation method of the present invention comprises the following steps:
1) clean: SiC sample is carried out, to remove surface contaminant；
2) deposit Al2O3: SiC sample surface after cleaning utilizes atomic layer deposition ALD method growth Al2O3Thin film, as mask and gate dielectric layer；
3) litho pattern: be fabricated to first reticle according to the source S of double grid grapheme transistor, drain D, conducting channel position；At Al2O3Film surface spin coating one layer photoetching glue, recycles first reticle, and photoresist carries out electron beam exposure, forms corrosion window；Use the caustic Al to corrosion window place2O3Thin film corrodes, and exposes SiC, obtains the window identical with photolithography plate figure；
4) connecting device heating: be placed in quartz ampoule by the print after windowing, and connect the reaction unit being made up of there-necked flask, water-bath, resistance furnace and quartz ampoule, heats to 750-1150 DEG C quartz ampoule with resistance furnace；
5) reaction generates carbon film: will be equipped with CCl4The there-necked flask of liquid heats to 60-80 DEG C, then passes into the Ar gas that flow velocity is 40-90ml/min in there-necked flask, utilizes Ar gas to carry CCl4Steam enters in quartz ampoule, makes CCl4React 20-100min with exposed SiC, generate carbon film；
6) annealing forms Graphene: the carbon film sample wafer of generation be placed in the Ar gas that flow velocity is 20-100ml/min, anneal 10-20 minute at temperature is 900-1100 DEG C, make carbon film reconstruct the Graphene with structure graph at the window's position, namely define the source electrode of double grid grapheme transistor, drain electrode and conducting channel；
7) grid groove is opened: by both sides Al from conducting channel 60-400nm place on the Graphene print that formed2O3Etch away, form grid groove；
8) deposit metal contact layer: the method deposit metal Pd/Au contact layer of deposited by electron beam evaporation on the Graphene print have grid groove；
9) photolithographic contact layer: make second reticle according to double grid, source, leakage metal electrode position；The polymethyl methacrylate solution that concentration is 7% is spun on metal level, and toasts 80s with 200 DEG C so that it is be in close contact with metal level；Utilize second reticle, electron beam exposure polymethyl methacrylate, polymethyl methacrylate layers is formed etch the mask pattern of metal contact layer；Again using oxygen as reacting gas, use reactive ion etching process, etch metal contact layer, form the double grid of double grid grapheme transistor, source, leakage metal electrode；
10) double grid grapheme transistor is obtained: the print using acetone soln immersion to make takes out post-drying, it is thus achieved that double grid grapheme transistor to remove polymethyl methacrylate layers in 10 minutes.
The present invention compared with prior art has the advantage that
1. the gate medium Al that the present invention adopts2O3Owing to having higher dielectric constant, it is possible to there is relatively larger physical thickness, thus avoiding leakage problem.
2. due to the fact that on SI-substrate, directly grow Graphene, without transferring graphene in other dielectric substrate during making devices on this Graphene, simplify technique, improve device reliability.
3. the grapheme transistor of the present invention, its graphene-channel exists only in structure graph region and this region is completely covered, therefore without Graphene is performed etching, it is ensured that the electron mobility in Graphene will not reduce, and effectively inhibits scattering effect.
4. the grapheme transistor of the present invention is owing to adopting double-gate structure, improves the gate voltage grapheme transistor grid modulating action to channel carrier concentration.
5. due to the fact that the Al of deposit2O3, not only can as mask but also as gate medium, processing technology can be further simplify.
Accompanying drawing explanation
Fig. 1 is the top view of double grid grapheme transistor of the present invention；
Fig. 2 is the sectional view of double grid grapheme transistor of the present invention；
Fig. 3 is the equipment schematic diagram preparing Graphene；
Fig. 4 is the flow chart that the present invention makes double grid grapheme transistor.
Detailed description of the invention
See figures.1.and.2, the transistor of the present invention, including: gate electrode 1, source electrode 2, drain electrode 3, graphene-channel 4, Al2O3Gate dielectric layer 5, Al2O3Mask layer and 4H-SiC or 6H-SiC SI-substrate 6；Al2O3Mask layer is deposited on the silicon face of 4H-SiC or 6H-SiC SI-substrate 6, and is carved with the grid groove for forming gate electrode 1 and for forming the structure graph of graphene-channel 4；Graphene-channel 4 is created on 4H-SiC or the 6H-SiC SI-substrate surface that structure graph position is exposed；Source electrode 2 and drain electrode 3 are respectively provided at the two ends of graphene-channel 4, are placed in the top of graphene-channel 4；The both sides of graphene-channel 4 are respectively arranged with a gate electrode 1, and this gate electrode 1 is positioned at Al2O3In the grid groove of mask layer, and it is spaced apart 60nm-400nm between each gate electrode 1 and graphene-channel 4；Al between each gate electrode 1 and graphene-channel 42O3Mask layer is namely as Al2O3Gate dielectric layer 5, forms double grid electrode structure.The contacting metal that gate electrode 1, source electrode 2 and drain electrode 3 adopt, is Pd/Au alloy, and its thickness is Pd=5nm, Au=100nm.
Under device duty, electric current, in graphene-channel 4, flows to source electrode 2 direction along drain electrode 3 to source electrode 2 or drain electrode 3.Grid 1 and graphene-channel 4 use Al2O3Gate dielectric layer 5 separates, by applying voltage to grid 1, in modulation graphene-channel 4, and the electron concentration of grid 1 correspondence position.
With reference to Fig. 3, the present invention prepares Graphene equipment mainly by three-way valve 3, there-necked flask 8, water-bath 9, quartz ampoule 5, and resistance furnace 6 forms；Three-way valve 3 is connected with quartz ampoule 5 by first passage 1, is connected with the left side mouth of there-necked flask 8 by second channel 2, and the right side mouth of there-necked flask 8 is connected with quartz ampoule 5, equipped with CCl in there-necked flask4Liquid, and it is placed in water-bath 9, quartz ampoule 5 is placed in resistance furnace 6.Three-way valve 3 is provided with air inlet 4, for passing into gas in equipment.
With reference to Fig. 4, the present invention makes the method for double grid grapheme transistor and is given as three embodiments:
Embodiment 1
Step 1: clean 6H-SiC print, to remove surface contaminant, such as Fig. 4 (a).
(1.1) 6H-SiC print is used NH4OH+H2O2Reagent soaks sample 10 minutes, takes out post-drying, to remove sample surfaces organic remains；
(1.2) the 6H-SiC print after the organic remains of removal surface is re-used HCl+H2O2Reagent soaks sample 10 minutes, takes out post-drying, to remove ionic contamination.
Step 2: at one layer of Al of 6H-SiC print surface deposition2O3, such as Fig. 4 (b).
(2.1) SiC sample is put into growth room, in growth room, pass into the N that flow is 10sccm2Carry out the purging of 2 minutes, repetitive cycling 5 times；
(2.2) opening temperature controller, growth room is heated to 250 DEG C, gas circuit is heated to 40 DEG C, continues 60 minutes；
(2.3) in growth room, the N that flow is 10sccm is passed into2Carry out the purging of 2 minutes, repetitive cycling 3 times.Hereafter, the N that flow is 15sccm it is continually fed into growth room2；
(2.4), passing into the steam that flow is 10sccm again to chamber, the time of passing into is 1 second；After 40 seconds, passing into trimethyl aluminium to chamber, its flow is 5sccm, and the time of passing into is 1 second, completes first Al2O3The atomic layer deposition cycle；
(2.5) Al is completed2O340 seconds of the atomic layer deposition cycle after, pass into the steam that flow is 10sccm again to chamber, the time of passing into is 1 second；After 40 seconds, passing into trimethyl aluminium to chamber, its flow is 5sccm, and the time of passing into is 1 second, completes another Al2O3The atomic layer deposition cycle；
(2.6) repeat step (2.5) totally 2 times, complete required Al2O3The deposit of layer.
Step 3: at Al2O3Thin film carves structure graph window, such as Fig. 4 (c).
(3.1) at Al2O3Spin coating one layer photoetching glue on thin film；
(3.2) it is fabricated to reticle according to the source S of double grid grapheme transistor, drain D, conducting channel position, uses electron beam exposure；
(3.3) it is HF:NH by component4F:H2The caustic of O=3:6:10 is to Al2O3Thin film corrodes, by Graphic transitions in reticle to Al2O3On thin film, exposing 6H-SiC, form source, leakage and raceway groove graphical window, wherein corroding the channel length obtained is 40nm, and width is 35nm.
Step 4: the print after windowing is loaded quartz ampoule heating exhaust gas.
(4.1) print after windowing is put in quartz ampoule 5, and quartz ampoule is placed in resistance furnace 6, then by CCl4Liquid loads in there-necked flask 8, and is put into by there-necked flask in water-bath 9, then according to quartz ampoule and there-necked flask are attached by Fig. 2；
(4.2) pass into, from the air inlet 4 of three-way valve 3, the Ar gas that flow velocity is 80ml/min, and utilize three-way valve 3 to control Ar gas to enter from first passage 1 quartz ampoule carries out emptying 30 minutes, make the air in quartz ampoule discharge from gas outlet 7；
(4.3) open resistance furnace on and off switch, quartz ampoule is heated to 950 DEG C.
Step 5: growth carbon film, such as Fig. 4 (d).
(5.1) open the power supply of water-bath 9, will be equipped with CCl4The there-necked flask 8 of liquid heats to 70 DEG C；
(5.2) after resistance furnace reaches 950 DEG C of setting, swivel tee valve, the Ar gas making flow velocity be 70ml/min flows into there-necked flask from second channel 2, and carries CCl4Steam enters quartz ampoule, makes gaseous state CCl4React in quartz ampoule 60 minutes with exposed 6H-SiC, generate carbon film.
Step 6: annealing forms Graphene, such as Fig. 4 (e).
The carbon film sample wafer of generation is placed in the Ar gas that flow velocity is 60ml/min, it is anneal 15 minutes at 1000 DEG C in temperature, make carbon film reconstruct Graphene at the window's position, namely define the source electrode of double grid grapheme transistor, drain electrode and conducting channel, it is thus achieved that double grid Graphene print.
Step 7: open grid groove, such as Fig. 4 (f).
By both sides Al from conducting channel 60nm place on the double grid Graphene print that formed2O3Etch away, form grid groove.
Step 8: deposit metal contact layer, such as Fig. 4 (g).
(8.1) putting on the microscope slide in electron beam evaporation deposition machine by double grid Graphene print, adjustment microscope slide is 50cm to the distance of target, and reative cell pressure is evacuated to 5 × 10-4Pa, adjustment line is 40mA, and deposit a layer thickness is the metal Pd of 5nm；
(8.2) the metal Au that method deposition thickness is 100nm of electron beam evaporation is recycled.
Step 9: be lithographically formed metal contact, such as Fig. 4 (h).
(9.1) spin coating concentration on the metal layer is the polymethyl methacrylate solution of 7%, and puts in baking oven, toasts 80s at 200 DEG C；
(9.2) it is fabricated to reticle according to double grid, source, leakage metal electrode position, with electron beam, polymethyl methacrylate layers is exposed；
(9.3) utilizing reactive ion etching process, etching sheet metal, reacting gas adopts oxygen, obtains the double grid of double grid grapheme transistor, source, leakage metal electrode.
Step 10: use acetone soln to soak the sample made and remove polymethyl methacrylate layers in 10 minutes, take out post-drying, it is thus achieved that double grid grapheme transistor.
Embodiment 2
Step one: clean 4H-SiC print, to remove surface contaminant, such as Fig. 4 (a).
4H-SiC print is used NH4OH+H2O2Reagent soaks sample 10 minutes, takes out post-drying, to remove sample surfaces organic remains；4H-SiC print after removing surface organic remains is re-used HCl+H2O2Reagent soaks sample 10 minutes, takes out post-drying, to remove ionic contamination.
Step 2: at one layer of Al of 4H-SiC print surface deposition2O3, such as Fig. 4 (b).
2a) SiC sample is put into growth room, in growth room, pass into the N that flow is 10sccm2Carry out the purging of 2 minutes, repetitive cycling 5 times；
2b) opening temperature controller, growth room is heated to 250 DEG C, gas circuit is heated to 40 DEG C, continues 60 minutes；
2c) in growth room, pass into the N that flow is 10sccm2Carry out the purging of 2 minutes, repetitive cycling 3 times.Hereafter, the N that flow is 15sccm it is continually fed into growth room2；
2d) passing into the steam that flow is 10sccm again to chamber, the time of passing into is 1 second；After 40 seconds, passing into trimethyl aluminium to chamber, its flow is 5sccm, and the time of passing into is 1 second, completes first Al2O3The atomic layer deposition cycle；
2e) complete an Al2O340 seconds of the atomic layer deposition cycle after, pass into the steam that flow is 10sccm again to chamber, the time of passing into is 1 second；After 40 seconds, passing into trimethyl aluminium to chamber, its flow is 5sccm, and the time of passing into is 1 second, completes another Al2O3The atomic layer deposition cycle；
2f) repeat step 2e) totally 4 times, complete required Al2O3The deposit of layer.
Step 3: at Al2O3Thin film carves structure graph window, such as Fig. 4 (c).
At Al2O3Spin coating one layer photoetching glue on thin film；It is fabricated to reticle according to the source S of double grid grapheme transistor, drain D, conducting channel position, uses electron beam exposure；It is HF:NH followed by component4F:H2The caustic of O=3:6:10 is to Al2O3Thin film corrodes, by Graphic transitions in reticle to Al2O3On thin film, exposing 4H-SiC, form source, leakage and raceway groove graphical window, wherein corroding the channel length obtained is 2um, and width is 350nm.
Step 4: the print after windowing is loaded quartz ampoule heating exhaust gas.
Print after windowing is put in quartz ampoule 5, and quartz ampoule is placed in resistance furnace 6, then by CCl4Liquid loads in there-necked flask 8, and is put into by there-necked flask in water-bath 9, then according to quartz ampoule and there-necked flask are attached by Fig. 1；Pass into, from the air inlet 4 of three-way valve 3, the Ar gas that flow velocity is 80ml/min, and utilize three-way valve 3 to control Ar gas to enter from first passage 1 quartz ampoule carries out emptying 30 minutes, make the air in quartz ampoule discharge from gas outlet 7；Open resistance furnace on and off switch, quartz ampoule is heated to 750 DEG C.
Step 5: growth carbon film, such as Fig. 4 (d).
Open the power supply of water-bath 9, will be equipped with CCl4The there-necked flask 8 of liquid heats to 60 DEG C；After resistance furnace reaches 750 DEG C of setting, swivel tee valve, the Ar gas making flow velocity be 40ml/min flows into there-necked flask from second channel 2, and carries CCl4Steam enters quartz ampoule, makes gaseous state CCl4React in quartz ampoule 20 minutes with exposed 4H-SiC, generate carbon film.
Step 6: annealing forms Graphene, such as Fig. 4 (e).
The carbon film sample wafer of generation is placed in the Ar gas that flow velocity is 20ml/min, it is anneal 10 minutes at 900 DEG C in temperature, make carbon film reconstruct Graphene at the window's position, namely define the source electrode of double grid grapheme transistor, drain electrode and conducting channel, it is thus achieved that double grid Graphene print.
Step 7: open grid groove, such as Fig. 4 (f).
By both sides Al from conducting channel 200nm place on the double grid Graphene print that formed2O3Etch away, form grid groove.
Step 8: identical with the step 8 of embodiment 1.
Step 9: identical with the step 9 of embodiment 1.
Step 10: identical with the step 10 of embodiment 1.
Embodiment 3
Step A: 4H-SiC substrate base is used NH4OH+H2O2Reagent soaks sample 10 minutes, takes out post-drying, to remove sample surfaces organic remains；4H-SiC print after removing surface organic remains is re-used HCl+H2O2Reagent soaks sample 10 minutes, takes out post-drying, to remove ionic contamination, such as Fig. 4 (a).
Step B: at one layer of Al of 4H-SiC print surface deposition2O3Thin film, such as Fig. 4 (b)
B1) SiC sample is put into growth room, in growth room, pass into the N that flow is 10sccm2Carry out the purging of 2 minutes, repetitive cycling 5 times；
B2) opening temperature controller, growth room is heated to 250 DEG C, gas circuit is heated to 40 DEG C, continues 60 minutes；
B3) in growth room, the N that flow is 10sccm is passed into2Carry out the purging of 2 minutes, repetitive cycling 3 times, hereafter, be continually fed into the N that flow is 15sccm to growth room2；
B4) passing into the steam that flow is 10sccm again to chamber, the time of passing into is 1 second；After 40 seconds, passing into trimethyl aluminium to chamber, its flow is 5sccm, and the time of passing into is 1 second, completes first Al2O3The atomic layer deposition cycle；
B5) Al is completed2O340 seconds of the atomic layer deposition cycle after, pass into the steam that flow is 10sccm again to chamber, the time of passing into is 1 second；After 40 seconds, passing into trimethyl aluminium to chamber, its flow is 5sccm, and the time of passing into is 1 second, completes another Al2O3The atomic layer deposition cycle；
B6) step B5 is repeated) totally 6 times, complete required Al2O3The deposit of layer.
Step C: at Al2O3Thin film carves structure graph window, such as Fig. 4 (c).
At Al2O3Spin coating one layer photoetching glue on thin film；It is fabricated to reticle according to the source S of double grid grapheme transistor, drain D, conducting channel position, uses electron beam exposure；It is HF:NH followed by component4F:H2The caustic of O=3:6:10 is to Al2O3Thin film corrodes, by Graphic transitions in reticle to Al2O3On thin film, exposing 4H-SiC, form source, leakage and raceway groove graphical window, wherein corroding the channel length obtained is 4um, and width is 600nm.
Step D: the print after windowing is put in quartz ampoule 5, and quartz ampoule is placed in resistance furnace 6, then by CCl4Liquid loads in there-necked flask 8, and is put into by there-necked flask in water-bath 9, then according to quartz ampoule and there-necked flask are attached by Fig. 1；Pass into, from the air inlet 4 of three-way valve 3, the Ar gas that flow velocity is 80ml/min, and utilize three-way valve 3 to control Ar gas to enter from first passage 1 quartz ampoule carries out emptying 30 minutes, make the air in quartz ampoule discharge from gas outlet 7；Open resistance furnace on and off switch, quartz ampoule is heated to 1150 DEG C.
Step E: open water-bath 9 power supply, will be equipped with CCl4The there-necked flask 8 of liquid heats to 80 DEG C；After resistance furnace reaches 1150 DEG C of setting, swivel tee valve, the Ar gas making flow velocity be 90ml/min flows into there-necked flask from second channel 2, and carries CCl4Steam enters quartz ampoule, makes gaseous state CCl4In quartz ampoule, react 100min with exposed 4H-SiC, generate carbon film, such as Fig. 4 (d).
Step F: the carbon film sample wafer of generation is placed in the Ar gas that flow velocity is 100ml/min, it is anneal 20 minutes at 1000 DEG C in temperature, carbon film is made to reconstruct Graphene at the window's position, namely the source electrode of double grid grapheme transistor, drain electrode and conducting channel are defined, obtain double grid Graphene print, such as Fig. 4 (e).
Step G: by both sides Al from conducting channel 400nm place on the double grid Graphene print that formed2O3Etch away, form grid groove, such as Fig. 4 (f).
Step H: identical with the step 8 of embodiment 1.
Step I: identical with the step 9 of embodiment 1.
Step J: identical with the step 10 of embodiment 1.
Claims (6)
1. the double grid grapheme transistor preparation method being gate medium with aluminium sesquioxide, comprises the following steps:
1) clean: SiC sample is carried out, to remove surface contaminant；
2) deposit aluminium sesquioxide: SiC sample surface after cleaning utilizes atomic layer deposition ALD method growth Al2O3Thin film, as mask and gate dielectric layer；
3) litho pattern: be fabricated to first reticle according to the source S of double grid grapheme transistor, drain D, conducting channel position；At Al2O3Film surface spin coating one layer photoetching glue, recycles first reticle, and photoresist carries out electron beam exposure, forms corrosion window；Use the caustic Al to corrosion window place2O3Thin film corrodes, and exposes SiC, obtains the window identical with photolithography plate figure；
4) connecting device heating: be placed in quartz ampoule by the print after windowing, and connect the reaction unit being made up of there-necked flask, water-bath, resistance furnace and quartz ampoule, heats to 750-1150 DEG C quartz ampoule with resistance furnace；
5) reaction generates carbon film: will be equipped with CCl4The there-necked flask of liquid heats to 60-80 DEG C, then passes into the Ar gas that flow velocity is 40-90ml/min in there-necked flask, utilizes Ar gas to carry CCl4Steam enters in quartz ampoule, makes CCl4React 20-100min with exposed SiC, generate carbon film；
6) annealing forms Graphene: the carbon film sample wafer of generation be placed in the Ar gas that flow velocity is 20-100ml/min, anneal 10-20min at temperature is 900-1100 DEG C, make carbon film reconstruct the Graphene with structure graph at the window's position, namely define the source electrode of double grid grapheme transistor, drain electrode and conducting channel；
7) grid groove is opened: by both sides Al from conducting channel 60-400nm place on the Graphene print that formed2O3Etch away, form grid groove；
8) deposit metal contact layer: the method deposit metal Pd/Au contact layer of deposited by electron beam evaporation on the Graphene print have grid groove；
9) photolithographic contact layer: make second reticle according to double grid, source, leakage metal electrode position；The polymethyl methacrylate solution that concentration is 7% is spun on metal level, and toasts 80s with 200 DEG C so that it is be in close contact with metal level；Utilize second reticle, electron beam exposure polymethyl methacrylate, polymethyl methacrylate layers is formed etch the mask pattern of metal contact layer；Again using oxygen as reacting gas, use reactive ion etching process, etch metal contact layer, form the double grid of double grid grapheme transistor, source, leakage metal electrode；
10) double grid grapheme transistor is obtained: use acetone soln to soak the print 10min made to remove polymethyl methacrylate layers, take out post-drying, it is thus achieved that double grid grapheme transistor.
2. method according to claim 1, it is characterised in that described step 1) SiC sample is carried out, carry out as follows:
1a) use NH4OH+H2O2Reagent soaks SiC sample 10 minutes, takes out post-drying, to remove print surface organic remains；
1b) use HCl+H2O2Reagent soaks print 10 minutes, takes out post-drying, to remove ionic contamination.
3. method according to claim 1, it is characterised in that described step 2) middle growth Al2O3Thin film, is undertaken by following processing step:
2a) SiC sample is put into growth room, in growth room, pass into the N that flow is 10sccm2Carry out the purging of 2 minutes, repetitive cycling 5 times；
2b) opening temperature controller, growth room is heated to 250 DEG C, gas circuit is heated to 40 DEG C, continues 60min；
2c) in growth room, pass into the N that flow is 10sccm2Carry out the purging of 2min, repetitive cycling 3 times；
2d) keep to growth room passing into the N that flow is 15sccm2；
2e) passing into N240s after, pass into steam to chamber successively and trimethyl aluminium complete an Al2O3The atomic layer deposition cycle；Wherein the flow that passes into of steam is 10sccm, and the time of passing into is 1s；The flow that passes into of trimethyl aluminium is 5sccm, and the time of passing into is 1s；
2f) repeat step 2e), until required Al2O3Layer is deposit all.
4. method according to claim 1, it is characterised in that step 3) described in use the caustic Al to corrosion window place2O3Thin film corrodes, and wherein the proportion relation of caustic is: HF:NH4F:H2O=3:6:10, corrosion rate is 10nm/s.
5. method according to claim 1, it is characterised in that described step 8) in electron beam evaporation deposit, its process conditions are: substrate is 50cm to the distance of target, and reative cell pressure is 5 × 10-4Pa, line is 40mA.
6. method according to claim 1, it is characterised in that described step 8) in metal Pd/Au layer, its thickness is respectively Pd=5nm, Au=100nm.
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