CN103839799A - Wet etching device of single semiconductor substrate - Google Patents

Wet etching device of single semiconductor substrate Download PDF

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Publication number
CN103839799A
CN103839799A CN201410060620.4A CN201410060620A CN103839799A CN 103839799 A CN103839799 A CN 103839799A CN 201410060620 A CN201410060620 A CN 201410060620A CN 103839799 A CN103839799 A CN 103839799A
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CN
China
Prior art keywords
semiconductor substrate
monolithic
etching device
ipa
cavity
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Pending
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CN201410060620.4A
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Chinese (zh)
Inventor
宋振伟
徐友峰
陈晋
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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Application filed by Shanghai Huali Microelectronics Corp filed Critical Shanghai Huali Microelectronics Corp
Priority to CN201410060620.4A priority Critical patent/CN103839799A/en
Publication of CN103839799A publication Critical patent/CN103839799A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

The invention provides a wet etching device of a single semiconductor substrate. The wet etching device of the single semiconductor substrate comprises a single reaction cavity and an IPA drying cavity, wherein the single reaction cavity is used for carrying out wet etching and cleaning on the single semiconductor substrate; the IPA is connected with one side of the single reaction cavity and used for carrying out IPA drying on the single semiconductor substrate. The wet etching device of the single semiconductor substrate overcomes the defects that as an existing wet etching device of the single semiconductor substrate adopts the N2 drying mode, water stains remain and static electricity is accumulated.

Description

Monolithic semiconductor substrate Wet-method etching device
Technical field
The present invention relates to technical field of semiconductors, particularly for the monolithic semiconductor substrate Wet-method etching device of wet-etching technology.
Background technology
Semiconductor substrate has the step of multiple wet etchings in manufacture process.Traditional wet-method etching equipment is batch formula Semiconductor substrate Wet-method etching device, and Wet-method etching device comprises multiple rinse baths, a collection of Semiconductor substrate of single treatment in same rinse bath (a collection of Semiconductor substrate is 25).Criticize formula Semiconductor substrate Wet-method etching device being dried of Semiconductor substrate utilized to hot atomization IPA conventionally, that above-mentioned drying mode has is residual without washmarking, without advantages such as accumulation of static electricity, but utilize batch formula Semiconductor substrate Wet-method etching device to there is the problems such as acid solution cross pollution, ion or metallic pollution.
Along with constantly dwindling of integrated circuit technique node, utilizing monolithic semiconductor substrate Wet-method etching device is more and more the trend of wet etching.Monolithic semiconductor substrate Wet-method etching device is for batch formula Semiconductor substrate Wet-method etching device, remove grain defect ability good, utilize monolithic semiconductor substrate Wet-method etching device is that monolithic list chamber carries out simultaneously in technical process, avoid the mutual pollution of acid solution, ion or the metallic pollution advantage such as still less.The dry N that utilizes to Semiconductor substrate of existing monolithic semiconductor substrate Wet-method etching device 2, Semiconductor substrate is being sprayed with N 2under environment, High Rotation Speed is to reach drying purpose.But this drying mode is easy to cause, and washmarking is residual, the defect of buildup of static electricity etc., continues under reduction in the live width of semiconductor device, and yield is killed in the residual meeting of washmarking, and buildup of static electricity can cause semiconductor device electric discharge and semiconductor device failure.
Therefore, be necessary the monolithic semiconductor substrate Wet-method etching device of prior art to improve, utilize N to solve existing monolithic semiconductor substrate Wet-method etching device 2the defect such as the residual and accumulation of static electricity of the washmarking that causes of drying mode.
Summary of the invention
The problem that the present invention solves is to provide a kind of monolithic semiconductor substrate Wet-method etching device, has solved and has utilized N 2the defect such as the residual and accumulation of static electricity of the washmarking that causes of drying mode.
For addressing the above problem, the invention provides a kind of monolithic semiconductor substrate Wet-method etching device and comprise:
Monolithic reaction cavity, carries out wet etching and cleaning for carrying out monolithic semiconductor substrate;
IPA is dried cavity, is connected with a side of described monolithic reaction cavity, dry for monolithic semiconductor substrate being carried out to IPA.
Alternatively, the dry cavity of described IPA is arranged at the top of described monolithic reaction cavity.
Alternatively, between the dry cavity of described monolithic reaction cavity and IPA, be provided with seal cover, for realizing sealing between the two.
Alternatively, also comprise: manipulator, for transferring semiconductor substrate between described monolithic reaction cavity and the dry cavity of IPA.
Compared with prior art, the present invention has the following advantages:
Monolithic semiconductor substrate Wet-method etching device provided by the invention, there is the dry cavity of monolithic reaction cavity and IPA, monolithic reaction cavity has the ability of stronger removal grain defect, also avoided the mutual pollution of acid solution, ion or the metallic pollution advantage such as still less, and the dry cavity of IPA has solved that the washmarking of utilizing N2 drying mode to cause is residual, the defect of buildup of static electricity etc., meet live width and continued to dwindle the lower requirement to wet-cleaned;
Further optimally, the dry cavity of described IPA is arranged at the top of described monolithic reaction cavity, the floor space of saving monolithic semiconductor substrate Wet-method etching device;
Further optimally, described monolithic semiconductor substrate Wet-method etching device utilizes manipulator transferring semiconductor substrate between described monolithic reaction cavity and the dry cavity of IPA, has improved the efficiency of technique.
Brief description of the drawings
Fig. 1 is the structural representation of the monolithic semiconductor substrate Wet-method etching device of an embodiment of invention.
Embodiment
Existing monolithic semiconductor substrate Wet-method etching device, for batch formula Semiconductor substrate Wet-method etching device, is removed grain defect ability good, but, the dry N that utilizes to Semiconductor substrate of existing monolithic semiconductor substrate Wet-method etching device 2, but this drying mode is easy to cause that washmarking is residual, the defect of buildup of static electricity etc., continues under reduction in the live width of semiconductor device, and yield is killed in the residual meeting of washmarking, and buildup of static electricity can cause semiconductor device electric discharge and semiconductor device failure.
For addressing the above problem, monolithic semiconductor substrate Wet-method etching device provided by the invention comprises:
Monolithic reaction cavity, carries out wet etching and cleaning for carrying out monolithic semiconductor substrate;
IPA is dried cavity, is connected with a side of described monolithic reaction cavity, dry for monolithic semiconductor substrate being carried out to IPA.
Below in conjunction with specific embodiment, technical scheme of the present invention is described in detail.For technical scheme of the present invention is better described, please refer to the structural representation of the monolithic semiconductor substrate Wet-method etching device of the one embodiment of the invention shown in Fig. 1.
Monolithic reaction cavity 10, be used for carrying out monolithic semiconductor substrate 40 and carry out wet etching and cleaning, with respect to batch formula Semiconductor substrate Wet-method etching device, the wet etching of monolithic reaction cavity 10 and cleaning performance are good, can be in effectively removing grain defect, avoid the mutual pollution of acid solution, ion or the metallic pollution advantage such as still less.
IPA is dried cavity 20, is connected with a side of described monolithic reaction cavity 10, dry for monolithic semiconductor substrate 40 being carried out to IPA, than N 2dry, utilize mode that IPA is dry have residual without washmarking, without advantages such as accumulation of static electricity.
In the present embodiment, the dry cavity 20 of described IPA is arranged at the top of described monolithic reaction cavity 10, the floor space of saving monolithic semiconductor substrate Wet-method etching device.In other embodiment, the dry cavity 20 of described IPA can also be arranged at left side or the right side of monolithic reaction cavity 10.
As one embodiment of the present of invention, between the dry cavity 20 of described monolithic reaction cavity 10 and IPA, be provided with seal cover 30, for realizing sealing between the two.
As one embodiment of the present of invention, described monolithic semiconductor substrate Wet-method etching device also comprises: manipulator (not shown), for transferring semiconductor substrate 40 between described monolithic reaction cavity 10 and the dry cavity 20 of IPA, be conducive to improve the efficiency of technique.。
Compared with prior art, the present invention has the following advantages:
Monolithic semiconductor substrate Wet-method etching device provided by the invention, there is the dry cavity of monolithic reaction cavity and IPA, monolithic reaction cavity has the ability of stronger removal grain defect, also avoided the mutual pollution of acid solution, ion or the metallic pollution advantage such as still less, and the dry cavity of IPA has solved that the washmarking of utilizing N2 drying mode to cause is residual, the defect of buildup of static electricity etc., meet live width and continued to dwindle the lower requirement to wet-cleaned;
Further optimally, the dry cavity of described IPA is arranged at the top of described monolithic reaction cavity, the floor space of saving monolithic semiconductor substrate Wet-method etching device;
Further optimally, described monolithic semiconductor substrate Wet-method etching device utilizes manipulator transferring semiconductor substrate between described monolithic reaction cavity and the dry cavity of IPA, has improved the efficiency of technique.
Therefore, above-mentioned preferred embodiment is only explanation technical conceive of the present invention and feature, and its object is to allow person skilled in the art can understand content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences that Spirit Essence is done according to the present invention change or modify, within all should being encompassed in protection scope of the present invention.

Claims (4)

1. a monolithic semiconductor substrate Wet-method etching device, is characterized in that, comprising:
Monolithic reaction cavity, carries out wet etching and cleaning for carrying out monolithic semiconductor substrate;
IPA is dried cavity, is connected with a side of described monolithic reaction cavity, dry for monolithic semiconductor substrate being carried out to IPA.
2. monolithic semiconductor substrate Wet-method etching device as claimed in claim 1, is characterized in that, the dry cavity of described IPA is arranged at the top of described monolithic reaction cavity.
3. monolithic semiconductor substrate Wet-method etching device as claimed in claim 1, is characterized in that, is provided with seal cover, for realizing sealing between the two between the dry cavity of described monolithic reaction cavity and IPA.
4. monolithic semiconductor substrate Wet-method etching device as claimed in claim 1, is characterized in that, also comprises: manipulator, and for transferring semiconductor substrate between described monolithic reaction cavity and the dry cavity of IPA.
CN201410060620.4A 2014-02-21 2014-02-21 Wet etching device of single semiconductor substrate Pending CN103839799A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410060620.4A CN103839799A (en) 2014-02-21 2014-02-21 Wet etching device of single semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410060620.4A CN103839799A (en) 2014-02-21 2014-02-21 Wet etching device of single semiconductor substrate

Publications (1)

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CN103839799A true CN103839799A (en) 2014-06-04

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CN201410060620.4A Pending CN103839799A (en) 2014-02-21 2014-02-21 Wet etching device of single semiconductor substrate

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105070676A (en) * 2015-09-10 2015-11-18 北京七星华创电子股份有限公司 Double-nitrogen protection spraying device and wafer cleaning method using same
CN107611010A (en) * 2017-08-31 2018-01-19 长江存储科技有限责任公司 A kind of method for cleaning wafer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1230768A (en) * 1998-03-31 1999-10-06 日本电气株式会社 Cleaning/drying station and production line for semiconductor devices
JP2005159293A (en) * 2003-09-18 2005-06-16 Nec Kagoshima Ltd Device and method for treating substrate
JP2008072116A (en) * 2006-09-12 2008-03-27 Semes Co Ltd Substrate processing device, and method for processing substrate
CN104075559A (en) * 2014-07-16 2014-10-01 江苏双仪光学器材有限公司 Lens dust-free drying equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1230768A (en) * 1998-03-31 1999-10-06 日本电气株式会社 Cleaning/drying station and production line for semiconductor devices
JP2005159293A (en) * 2003-09-18 2005-06-16 Nec Kagoshima Ltd Device and method for treating substrate
JP2008072116A (en) * 2006-09-12 2008-03-27 Semes Co Ltd Substrate processing device, and method for processing substrate
CN104075559A (en) * 2014-07-16 2014-10-01 江苏双仪光学器材有限公司 Lens dust-free drying equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105070676A (en) * 2015-09-10 2015-11-18 北京七星华创电子股份有限公司 Double-nitrogen protection spraying device and wafer cleaning method using same
CN105070676B (en) * 2015-09-10 2018-06-22 北京七星华创电子股份有限公司 A kind of dinitrogen gas shielded injection apparatus and the wafer cleaning method using the device
CN107611010A (en) * 2017-08-31 2018-01-19 长江存储科技有限责任公司 A kind of method for cleaning wafer

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Application publication date: 20140604