CN103837253A - CMOS temperature sensor - Google Patents
CMOS temperature sensor Download PDFInfo
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- CN103837253A CN103837253A CN201410108382.XA CN201410108382A CN103837253A CN 103837253 A CN103837253 A CN 103837253A CN 201410108382 A CN201410108382 A CN 201410108382A CN 103837253 A CN103837253 A CN 103837253A
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Abstract
The invention relates to a CMOS temperature sensor which comprises a bipolar transistor, an over-sampling analog-digital conversion module, a correction module and at least two unit current sources. The output end of each unit current source is coupled to the collector electrode of the bipolar transistor through a switching module. The collector electrode and the base electrode of the bipolar transistor are connected with a reference ground and then connected to the analog-digital conversion module; the analog-digital conversion module is connected with a reference voltage; the switching module switches all the unit current sources to the bipolar transistor; the analog-digital conversion module outputs a first conversion result; then the unit current sources are switched to the bipolar transistor within a collecting cycle of the analog-digital conversion module in sequence, only one unit current source can be connected each time, and the analog-digital conversion module outputs a second conversion result; the correction module combines the first conversion result and the second conversion result to obtain a final correction value. The CMOS temperature sensor can improve correcting efficiency.
Description
Technical field
The present invention relates to a kind of sensor field, relate in particular to a kind of CMOS temperature sensor.
Background technology
Along with portability and the miniaturization of each electronic product, can and data acquisition circuit, calibration module even the integrated temperature sensor based on modern CMOS technique of System on Chip/SoC to have volume little, the feature that cost is low and being widely used.This class CMOS integrated temperature sensor is mainly based on band gap reference voltage source circuit, the CTAT voltage that forms respectively the PTAT voltage being directly proportional to absolute temperature and a negative temperature coefficient by bipolar transistor and some current biasing circuits is combined into one does not have the voltage of temperature coefficient as with reference to voltage, realizes the detection of temperature by measuring the ratio of PTAT voltage or CTAT voltage and this reference voltage.In this process, due to the many undesirable factor in chip production process, cause last temperature output to have larger deviation, conventionally comprised drift, sensitivity variations and non-linear deviation three class deviations.Reaching in +/-0.5 C accuracy then conventionally need to measure and calibrate at two and above temperature spot.Because the stabilization time of temperature correction equipment is very long, cause calibration cost to become the key factor that restriction CMOS temperature sensor is produced.
Fig. 1 shows traditional CMOS temperature sensor circuit schematic diagram.Bipolar transistor and Q2 are respectively two bipolar transistors, R1, and R2, R3 is three resistance.The ratio-dependent of R2 and R1 the collector bias current ratio N of bipolar transistor and Q2, the emitter junction area ratio of Q2 and bipolar transistor is M simultaneously, VTP and VTN voltage difference can be expressed as
At M and N, fixing in the situation that, this voltage has fixing positive temperature coefficient (PTC).Amplifier output voltage V REF is the pressure drop sum in bipolar transistor and resistance R 1 simultaneously, and because amplifier both end voltage ideally should be identical, R1 is identical with the pressure drop on R2, is
This voltage also has positive temperature coefficient (PTC).According to the characteristic of bipolar transistor, the bias voltage Vbe of bipolar transistor has negative temperature coefficient, selects the ratio of suitable R2 and R3, and VREF can be a voltage that almost there is no temperature coefficient.The value of general ln (MN) R2/R3 is in 17.2 left and right.Reference voltage using this voltage as ADC, Δ Vbe is inputted as ADC, can obtain an only output relevant to absolute temperature, this ADC output is carried out such as drift through follow-up calibration logic, sensitivity and nonlinear calibration, just can obtain temperature reading.
The mismatch of each element in chip actual production process and the various error components that parameter error causes have been ignored in analysis above, as the input offset voltage of amplifier, resistance R 1, R2, R3's is out of proportion, and the skew of bipolar transistor self parameter makes Vbe drift, the input offset voltage of ADC, gain error etc. factor all can be brought drift, sensitivity error and even nonlinearity erron to finishing temperature output.Conventionally good device layout, some reduce the circuit engineering of circuit offset voltage as chopper stabilize, Correlated Double Samplings etc. can be used for reducing these errors, but final temperature error still has relatively large deviation, eliminate as these errors being all calibrated to module, at least need to planar survey calibration under two temperature spots.
Summary of the invention
For solving the problems of the technologies described above, the object of this invention is to provide a kind of CMOS temperature sensor of correcting efficiency that improves.
CMOS temperature sensor of the present invention, comprise the analog-to-digital conversion module, calibration module of a bipolar transistor, over-sampling and two-way unit current source at least, the output terminal of unit current source is coupled to the collector of bipolar transistor by handover module, the collector of described bipolar transistor is connected with reference ground with base stage, and is connected to analog-to-digital conversion module; Described analog-to-digital conversion module is connected with reference voltage;
Described handover module is first switched to bipolar transistor by all unit current source simultaneously; Analog-to-digital conversion module is exported the first transformation result; Then in a collection period of analog-to-digital conversion module, successively unit current source is switched to bipolar transistor, only has a unit current source conducting at every turn, analog-to-digital conversion module is exported the second transformation result; Comprehensive the first transformation result of described correction module and the second transformation result draw final correction value.
Further, described circuit for rectifying also comprises the bias current generation module that produces different units current source.
Further, described handover module comprises the switch element being connected in series with each cell current source output terminal, and the dynamic cell matching logic unit of gauge tap unit.
Further, the computing formula of described the first transformation result D1 is:
Wherein V
be1for the base voltage of bipolar transistor in this sampling; V
osfor the input offset voltage of analog-to-digital conversion module; G
adcit is the gain of analog-to-digital conversion module.
Further, the computing formula of described the second transformation result D2 is:
Wherein V
be2for the base voltage of bipolar transistor in this sampling.
Further, described final correction value T
outtechnology formula be:
Wherein K is a gain calibration coefficient, adjusts M value and can make denominator part there is no temperature coefficient.
By such scheme, the present invention at least has the following advantages:
What consider two stages uses is same bipolar transistor, do not have emitter junction area mismatches problem, and handover module diminishes the impact of the imbalance between unit current source.Therefore the base voltage of the bipolar transistor of double sampling can be thought and approaches ideal value.Meanwhile, the reference voltage of analog-to-digital conversion module and gain do not affect last output, and the relative traditional cmos temperature sensor of impact of error originated from input becomes very little, reduce its size can make end temperature output impact be left in the basket by circuit engineering.Only there is the value of bipolar transistor base voltage itself can be subject to such as process deviation, the impact of encapsulation stress and drifting about.This drift can be by finely tuning M value after planar survey under a standard temperature point, can balance out this drift, thereby obtain accurate temperature output.Therefore, the present invention only needs a temperature spot just can realize CMOS temperature sensor, with respect to the measurement scheme of existing two temperature point, corrects efficiency and significantly improves.
Accompanying drawing explanation
Fig. 1 is the existing CMOS temperature sensor principle schematic based on the calibration of two temperature point.
Fig. 2 is CMOS temperature sensor circuit principle schematic of the present invention.
Embodiment
CMOS temperature sensor of the present invention, comprise the analog-to-digital conversion module, calibration module of a bipolar transistor, over-sampling and two-way unit current source at least, the output terminal of unit current source is coupled to the collector of bipolar transistor by handover module, the collector of described bipolar transistor is connected with reference ground with base stage, and is connected to analog-to-digital conversion module; Described analog-to-digital conversion module is connected with reference voltage;
Described handover module is first switched to bipolar transistor by all unit current source simultaneously; Analog-to-digital conversion module is exported the first transformation result; Then in a collection period of analog-to-digital conversion module, successively unit current source is switched to bipolar transistor, only has a unit current source conducting at every turn, analog-to-digital conversion module is exported the second transformation result; Comprehensive the first transformation result of described correction module and the second transformation result draw final correction value.
What consider two stages uses is same bipolar transistor, do not have emitter junction area mismatches problem, and handover module diminishes the impact of the imbalance between unit current source.Therefore the base voltage of the bipolar transistor of double sampling can be thought and approaches ideal value.Meanwhile, the reference voltage of analog-to-digital conversion module and gain do not affect last output, and the relative traditional cmos temperature sensor of impact of error originated from input becomes very little, reduce its size can make end temperature output impact be left in the basket by circuit engineering.Only there is the value of bipolar transistor base voltage itself can be subject to such as process deviation, the impact of encapsulation stress and drifting about.This drift can be by finely tuning M value after planar survey under a standard temperature point, can balance out this drift, thereby obtain accurate temperature output.Therefore, the present invention only needs a temperature spot just can realize CMOS temperature sensor, with respect to the measurement scheme of existing two temperature point, corrects efficiency and significantly improves.
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for illustrating the present invention, but are not used for limiting the scope of the invention.
As shown in Figure 2, CMOS temperature sensor of the present invention, comprise the analog-to-digital conversion module (ADC), calibration module of a bipolar transistor Q1, over-sampling and two-way unit current source 1 at least, the output terminal of unit current source 1 is coupled to the collector of bipolar transistor Q1 by handover module, the collector of described bipolar transistor Q1 is connected with reference ground with base stage, and is connected to analog-to-digital conversion module; Described analog-to-digital conversion module is connected with reference voltage.
Described circuit for rectifying also comprises the bias current generation module that produces different units current source 1.Described handover module comprises the switch element 2 being connected in series with each unit current source 1 output terminal, and the dynamic cell matching logic unit (DEM logic) of gauge tap unit 2.
The ADC of over-sampling, i.e., in the change-over period, repeatedly sample to input signal, and the transformation result of repeatedly sampling is carried out obtaining ADC transformation result after low-pass filtering.ADC reference voltage VREF chooses a relative voltage, for example supply voltage or its dividing potential drop.The output of ADC is as input output after calibration of calibration module.
Circuit working is divided into two stages to be completed.
First stage: 1 conducting simultaneously of all unit current source, carry out an ADC conversion, the first transformation result D1 obtaining represents, D1 can be expressed as following expression:
Wherein V
be1for bipolar transistor Q1 is at the base voltage of first stage.V
osfor the input offset voltage of ADC.G
adcbe the gain of ADC, conventionally have certain deviation.
Subordinate phase: all unit current source 1 are by DEM logic control, conducting successively in turn, and only have unit current source 1 conducting at every turn.Within an ADC change-over period, sampling number corresponding to each unit current source 1 ON time is identical.The second transformation result is D2, and D2 can be expressed as following expression:
Wherein V
be2for bipolar transistor Q1 is at the base voltage of subordinate phase.
Result is corrected: the transformation result of twice output is obtained by following computing by calibration module
Wherein K is a gain calibration coefficient, adjusts M value and can make denominator part there is no temperature coefficient.That consider two stages uses is same bipolar transistor Q1 bipolar transistor Q1, does not have emitter junction area mismatches problem, and DEM logic makes the impact of the imbalance between unit current source 1 diminish.Therefore V
be1-V
be2can think and approach ideal value,
Meanwhile, reference voltage VREF and the gain G of ADC
adclast output is not affected to error originated from input V
osthe relative traditional cmos temperature sensor of impact become very little, reduce its size by circuit engineering and can make the output impact on end temperature be left in the basket.Only there is V
be1value itself can be subject to such as process deviation, the impact of encapsulation stress and drifting about.This drift can be by finely tuning M value after planar survey under a standard temperature point, can balance out this drift, thereby obtain accurate temperature output.
Below be only the preferred embodiment of the present invention; be not limited to the present invention; should be understood that; for those skilled in the art; do not departing under the prerequisite of the technology of the present invention principle; can also make some improvement and modification, these improve and modification also should be considered as protection scope of the present invention.
Claims (6)
1. a CMOS temperature sensor, it is characterized in that, comprise the analog-to-digital conversion module, calibration module of a bipolar transistor, over-sampling and two-way unit current source at least, the output terminal of unit current source is coupled to the collector of bipolar transistor by handover module, the collector of described bipolar transistor is connected with reference ground with base stage, and is connected to analog-to-digital conversion module; Described analog-to-digital conversion module is connected with reference voltage;
Described handover module is first switched to bipolar transistor by all unit current source simultaneously; Analog-to-digital conversion module is exported the first transformation result; Then in a collection period of analog-to-digital conversion module, successively unit current source is switched to bipolar transistor, only has a unit current source conducting at every turn, analog-to-digital conversion module is exported the second transformation result; Comprehensive the first transformation result of described correction module and the second transformation result draw final correction value.
2. a kind of CMOS temperature sensor as claimed in claim 1, is characterized in that, described circuit for rectifying also comprises the bias current generation module that produces different units current source.
3. a kind of CMOS temperature sensor as claimed in claim 1, is characterized in that, described handover module comprises the switch element being connected in series with each cell current source output terminal, and the dynamic cell matching logic unit of gauge tap unit.
4. a kind of CMOS temperature sensor as claimed in claim 1, is characterized in that, the computing formula of described the first transformation result D1 is:
Wherein V
be1for the base voltage of bipolar transistor in this sampling; V
osfor the input offset voltage of analog-to-digital conversion module; G
adcit is the gain of analog-to-digital conversion module.
5. a kind of CMOS temperature sensor as claimed in claim 4, is characterized in that, the computing formula of described the second transformation result D2 is:
Wherein V
be2for the base voltage of bipolar transistor in this sampling.
6. a kind of CMOS temperature sensor as claimed in claim 5, is characterized in that, described final correction value T
outtechnology formula be:
Wherein K is a gain calibration coefficient, adjusts M value and can make denominator part there is no temperature coefficient.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105487587A (en) * | 2015-12-21 | 2016-04-13 | 成都华微电子科技有限公司 | Calibration circuit of high-precision digital temperature sensor |
| CN105651416A (en) * | 2015-12-31 | 2016-06-08 | 记忆科技(深圳)有限公司 | Current type temperature sensor circuit |
| CN106487388A (en) * | 2015-09-01 | 2017-03-08 | 恩智浦有限公司 | Sensor circuit |
| CN106482851A (en) * | 2016-11-29 | 2017-03-08 | 浙江悦和科技有限公司 | There is the temperature sensing device of UHFRFID communication function |
| CN106687785A (en) * | 2014-09-29 | 2017-05-17 | 通用电气智能平台嵌入***公司 | Resistance temperature detection with single current source current splitter |
| CN109238516A (en) * | 2018-10-16 | 2019-01-18 | 聚辰半导体(上海)有限公司 | A kind of temperature sensors of high precision calibration method and circuit |
| CN112097937A (en) * | 2020-09-07 | 2020-12-18 | 成都海光微电子技术有限公司 | Temperature detection circuit and chip |
| CN112781743A (en) * | 2021-01-12 | 2021-05-11 | 中国电子科技集团公司第五十八研究所 | CMOS temperature sensor circuit applied to SoC and working method thereof |
| US20220082450A1 (en) * | 2020-09-14 | 2022-03-17 | Nxp B.V. | Temperature-to-digital converter |
| CN114235217A (en) * | 2021-12-13 | 2022-03-25 | 浙江大学 | Method for calibrating CMOS temperature sensor chip based on BJT |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106687785A (en) * | 2014-09-29 | 2017-05-17 | 通用电气智能平台嵌入***公司 | Resistance temperature detection with single current source current splitter |
| CN106487388B (en) * | 2015-09-01 | 2021-11-16 | 恩智浦有限公司 | Sensor circuit |
| CN106487388A (en) * | 2015-09-01 | 2017-03-08 | 恩智浦有限公司 | Sensor circuit |
| CN105487587A (en) * | 2015-12-21 | 2016-04-13 | 成都华微电子科技有限公司 | Calibration circuit of high-precision digital temperature sensor |
| CN105651416A (en) * | 2015-12-31 | 2016-06-08 | 记忆科技(深圳)有限公司 | Current type temperature sensor circuit |
| CN106482851A (en) * | 2016-11-29 | 2017-03-08 | 浙江悦和科技有限公司 | There is the temperature sensing device of UHFRFID communication function |
| CN106482851B (en) * | 2016-11-29 | 2023-04-11 | 浙江悦和科技有限公司 | Temperature sensing device with UHFRFID communication function |
| CN109238516A (en) * | 2018-10-16 | 2019-01-18 | 聚辰半导体(上海)有限公司 | A kind of temperature sensors of high precision calibration method and circuit |
| CN112097937A (en) * | 2020-09-07 | 2020-12-18 | 成都海光微电子技术有限公司 | Temperature detection circuit and chip |
| US20220082450A1 (en) * | 2020-09-14 | 2022-03-17 | Nxp B.V. | Temperature-to-digital converter |
| US11674855B2 (en) * | 2020-09-14 | 2023-06-13 | Nxp B.V. | Temperature-to-digital converter |
| CN112781743A (en) * | 2021-01-12 | 2021-05-11 | 中国电子科技集团公司第五十八研究所 | CMOS temperature sensor circuit applied to SoC and working method thereof |
| CN112781743B (en) * | 2021-01-12 | 2021-11-02 | 中国电子科技集团公司第五十八研究所 | CMOS temperature sensor circuit applied to SoC and working method thereof |
| CN114235217A (en) * | 2021-12-13 | 2022-03-25 | 浙江大学 | Method for calibrating CMOS temperature sensor chip based on BJT |
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Address after: 215000 room No. 388 E1105, Suzhou Industrial Park, Jiangsu Province, room E1105 Patentee after: Suzhou core microelectronics Limited by Share Ltd Address before: 215123 teaching building, No. 150, love road, Suzhou Industrial Park, Jiangsu, A104 Patentee before: SUZHOU NOVOSENSE MICROELECTRONICS CO., LTD. |