CN103825570B - Cavity for acquiring terahertz waves based on avalanche diode high-order frequency doubling - Google Patents
Cavity for acquiring terahertz waves based on avalanche diode high-order frequency doubling Download PDFInfo
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- CN103825570B CN103825570B CN201410028807.6A CN201410028807A CN103825570B CN 103825570 B CN103825570 B CN 103825570B CN 201410028807 A CN201410028807 A CN 201410028807A CN 103825570 B CN103825570 B CN 103825570B
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Abstract
The invention discloses a cavity for acquiring terahertz waves based on avalanche diode high-order frequency doubling, which comprises a low-pass filter circuit, a coaxial feeder, a frequency doubling cavity, a short circuit tuning sliding block, an avalanche diode, a Teflon medium and a coaxial feeder inner conductor, wherein the frequency doubling cavity is a rectangular cavity; the coaxial feeder inner conductor passes through the coaxial feeder; the lower end of the coaxial feeder passes through the frequency doubling cavity, after passing through the Teflon medium, the bottom surface of the coaxial feeder inner conductor is connected with the low-pass filter circuit; the upper end of the coaxial feeder inner conductor inside the coaxial feeder abuts against the top of the avalanche diode; the short circuit tuning sliding block is inserted from the length direction of the frequency doubling cavity; and the transverse shaft length of the frequency doubling cavity is adjusted to be matched with the high-order harmonic waves of the corresponding avalanche diode. The coaxial input structure enables the external matching network to be flexible, corresponding adjustment is carried out according to different impedance characteristics of different avalanche diodes, the loss is low, the structure is simple and compact, matching is easy, and the filled Teflon medium plays the role of fixing the coaxial inner conductor and promoting impedance matching of the avalanche diode.
Description
Technical field
The present invention relates to the cavity of a kind of THz wave, especially relate to a kind of cavity obtaining THz wave based on avalanche diode high order frequency.
Background technology
Terahertz (THz) ripple refers to frequency electromagnetic wave in the range of 0.1-10THz, and wavelength is in 3000～30 μm, between millimeter wave and infrared light, occupies the most special position in electromagnetic spectrum.THz wave is not only the macroscopic classical theories transition region to Bcs Theory, is also the electronics transition region to photonic propulsion, is referred to as " Terahertz space (the THz gap) " of electromagnetic spectrum.Terahertz science and technology is technology emerging over nearly more than 20 years, although the mankind have been achieved for the biggest progress in terms of the research and understanding of THz, THz technology not only exists the biggest value in basic science and actual application.But the problem of Terahertz wave source is not well solved for a long time the most always, the terahertz emission source designing lower price high efficiency has high status in the middle of Terahertz field.
The avalanche current waveform that avalanche diode produces under sufficient intensity radio-frequency field effect is sharp-pointed, and containing the abundant higher hamonic wave that can reach millimeter wave frequency band, the higher hamonic wave extracting corresponding number of times just can realize the high order frequency of THz wave frequency range；Avalanche diode also has negative resistance charactertistic in the frequency range of output harmonic wave frequency simultaneously, and this negative resistance charactertistic is conducive to increasing the energy of output harmonic wave, it is possible to effective raising output harmonic wave power, reduction frequency multiplication loss.In snowslide high order frequency pattern, the generation of snowslide carrier, multiplication and transport property follow the Physics Work mechanism of avalanche device equally.
Avalanche diode is only placed in suitable cavity body structure and is suitably encouraged and just can be operated in optimum state, efficiently extracts higher hamonic wave and realizes the high order frequency of THz wave frequency range.The core of whole snowslide high order frequency assembly is exactly the design of frequency multiplication cavity, the waveguide circuit of terahertz wave band in frequency multiplier circuit, simultaneously in order to regulate the duty of snowslide frequency doubled diode, fully excavate the frequency multiplication potential of snowslide frequency multiplication pipe, also need in frequency multiplier circuit, design various tunable circuit, including the partially-tuned circuit of micro-strip and cavity portion tuning circuit.How the difficult point of design is by these a few part reasonable arrangements, improve the impedance matching condition of power amplifier output and snowslide frequency doubled diode simultaneously, as much as possible excitation source signal is added on snowslide frequency doubled diode, find the best operating point of whole times of frequency module, reduce the frequency multiplication loss of snowslide frequency multiplication assembly, to improve its performance.
Summary of the invention
In order to overcome problem present in background technology, it is an object of the invention to provide a kind of cavity obtaining THz wave based on avalanche diode high order frequency.
The technical solution used in the present invention is:
The present invention includes low-pass filter circuit, feeds coaxial, frequency multiplication cavity, short circuit tuning slide block, avalanche diode, Teflon medium and feed coaxial inner conductor；Frequency multiplication cavity is rectangular cavities, feed coaxial inner conductor is run through in feed is coaxial, feed coaxial lower end through frequency multiplication cavity by after Teflon medium, feed coaxial inner conductor bottom surface and low-pass filter circuit connect, feed coaxial inner conductor upper end in feed is coaxial withstands on the top of avalanche diode, short circuit tuning slide block inserts from the length direction of frequency multiplication cavity, and the transverse axis length of regulation frequency multiplication cavity mates the higher hamonic wave of corresponding avalanche diode.
Teflon medium is filled in the coaxial lower end of described feed and low-pass filter circuit contact position, this medium fixing feed coaxial inner conductor and coupling avalanche diode impedance, feed coaxial upper end docking avalanche diode, use top-fed mode to add electrical signals to avalanche diode.
Described low-pass filter circuit is multistage inductance and the parallel circuit of multistage electric capacity.
Compared with background technology, the invention have the advantages that:
1, coaxial input structure makes the matching network of outside have the biggest motility, can be adjusted accordingly according to different avalanche diode difference impedance operators.
2, it is that the feed to avalanche diode uses coaxial top-fed mode, having the advantages such as low, simple for structure, the easy coupling of loss, the internal Teflon medium filled of coaxial configuration has fixing coaxial inner wire and promotes the effect of avalanche diode impedance matching simultaneously.
Accompanying drawing explanation
Fig. 1 is integrally-built theory diagram.
Fig. 2 is avalanche diode frequency multiplication cavity structure diagram.
Fig. 3 is avalanche diode frequency multiplication cavity profile.
In figure: 1, external matching circuit, 2, avalanche diode frequency multiplication cavity, 3, low-pass filter circuit, 4, feed coaxial, 5, frequency multiplication cavity, 6, short circuit tuning slide block, 7, avalanche diode, 8, Teflon medium, 9, feed coaxial inner conductor.
Detailed description of the invention
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
As it is shown in figure 1, direct current signal of the present invention and rf excitation signal enter back into avalanche diode frequency multiplication cavity 2 by external matching circuit 1, then extracted the THz wave of suitable harmonic wave, i.e. respective frequencies by regulation avalanche diode frequency multiplication cavity 2.
As shown in Figure 2 and Figure 3, the present invention includes low-pass filter circuit 3, feeds coaxial 4, frequency multiplication cavity 5, short circuit tuning slide block 6, avalanche diode 7, Teflon medium 8 and feed coaxial inner conductor 9；Frequency multiplication cavity 5 is rectangular cavities, feed coaxial inner conductor 9 is run through in feeding coaxial 4, the lower end feeding coaxial 4 passes frequency multiplication cavity 5 by after Teflon medium 8, feed coaxial inner conductor 9 bottom surface and low-pass filter circuit 3 connect, feed feed coaxial inner conductor 9 upper end in coaxial 4 and withstand on the top of avalanche diode 7, short circuit tuning slide block 6 inserts from the length direction of frequency multiplication cavity 5, the transverse axis length of regulation frequency multiplication cavity 5 mates the higher hamonic wave of corresponding avalanche diode, the THz wave of i.e. required frequency.
Teflon medium 8 is filled in coaxial 4 lower ends of described feed and low-pass filter circuit 2 contact position, this medium fixing feed coaxial inner conductor 9 and coupling avalanche diode 7 impedance, feed coaxial 4 upper end docking avalanche diodes 6, use top-fed mode to add electrical signals to avalanche diode 6.
Described low-pass filter circuit 3 is the parallel circuit of multistage inductance and multistage electric capacity.
Illustrate embodiments of the present invention in detail below:
First, direct current signal is input to avalanche diode frequency multiplication cavity 2 by external matching circuit 1, through low-pass filter circuit 3, is loaded into avalanche diode 7 by feed coaxial 4 so that avalanche diode 7 is in breakdown conditions.
Then, the radio-frequency (RF) excited source signal of 7.34GHz enters into avalanche diode frequency multiplication cavity 2 via external matching circuit 1, through low-pass filter circuit 3, is loaded into avalanche diode 7 by feed coaxial inner conductor 9, and excitation avalanche diode 7 enters oscillatory regime.
Finally, regulation short circuit tuning slide block 6 so that avalanche diode 7 and frequency multiplication cavity 5 reach resonance coupling, it is thus possible to extract the harmonic signal of 15 frequencys multiplication of 7.34GHz excitation source signal, obtains the THz wave of corresponding 110GHz.
Claims (2)
1. the cavity obtaining THz wave based on avalanche diode high order frequency, it is characterised in that: include low-pass filter circuit (3), feed coaxial (4), frequency multiplication cavity (5), short circuit tuning slide block (6), avalanche diode (7), Teflon medium (8) and feed coaxial inner conductor (9)；Frequency multiplication cavity (5) is rectangular cavities, feed runs through feed coaxial inner conductor (9) in coaxial (4), after Teflon medium (8) is passed through through frequency multiplication cavity (5) in the lower end of feed coaxial (4), feed coaxial inner conductor (9) bottom surface and low-pass filter circuit (3) connect, feed coaxial inner conductor (9) upper end in feed coaxial (4) withstands on the top of avalanche diode (7), short circuit tuning slide block (6) is inserted from the length direction of frequency multiplication cavity (5), the transverse axis length of regulation frequency multiplication cavity (5) mates the higher hamonic wave of corresponding avalanche diode, the THz wave of i.e. required frequency；
Direct current signal is input to avalanche diode frequency multiplication cavity (2) by external matching circuit (1), through low-pass filter circuit (3), is loaded into avalanche diode (7) by feed coaxial (4) so that avalanche diode (7) is in breakdown conditions；
Teflon medium (8) is filled in coaxial (4) lower end of described feed and low-pass filter circuit (3) contact position, this medium fixing feed coaxial inner conductor (9) and coupling avalanche diode (7) impedance, coaxial (4) upper end docking avalanche diode (7) of feed, uses top-fed mode to add electrical signals to avalanche diode (7).
A kind of cavity obtaining THz wave based on avalanche diode high order frequency the most according to claim 1, it is characterised in that: described low-pass filter circuit (3) is multistage inductance and the parallel circuit of multistage electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410028807.6A CN103825570B (en) | 2014-01-22 | 2014-01-22 | Cavity for acquiring terahertz waves based on avalanche diode high-order frequency doubling |
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| CN201410028807.6A CN103825570B (en) | 2014-01-22 | 2014-01-22 | Cavity for acquiring terahertz waves based on avalanche diode high-order frequency doubling |
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| CN103825570A CN103825570A (en) | 2014-05-28 |
| CN103825570B true CN103825570B (en) | 2017-01-11 |
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| CN105720921A (en) * | 2016-01-27 | 2016-06-29 | 西安电子工程研究所 | High-order frequency multiplier based on IMPATT (Impact Avalanche and Transit Time) diode |
| CN109283448B (en) * | 2018-10-08 | 2021-01-05 | 北方电子研究院安徽有限公司 | Avalanche diode high-frequency tuning device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103500867A (en) * | 2013-09-26 | 2014-01-08 | 西安空间无线电技术研究所 | Frequency-adjustable and power-tunable terahertz avalanche oscillator |
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| US6600387B2 (en) * | 2001-04-17 | 2003-07-29 | Channel Master Llc | Multi-port multi-band transceiver interface assembly |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103500867A (en) * | 2013-09-26 | 2014-01-08 | 西安空间无线电技术研究所 | Frequency-adjustable and power-tunable terahertz avalanche oscillator |
Non-Patent Citations (1)
| Title |
|---|
| Photosensitivity Analysis of Gallium Nitride and Silicon Carbide Terahertz IMPATT Oscillators: Comparison of Theoretical Reliability and Study on Experimental Feasibility;Moumita Mukherjee 等;《Device and Materials Reliability, IEEE Transactions on》;20081031;第611页第III节-第618页 * |
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Inventor after: Zhao Jiaqi Inventor after: Zhu Zhongbo Inventor after: Wang Chun Inventor after: Xu Kuiwen Inventor after: Zhang Bin Inventor after: Ran Lixin Inventor before: Zhao Jiaqi Inventor before: Zhu Zhongbo Inventor before: Xu Kuiwen Inventor before: Zhang Bin Inventor before: Ran Lixin |
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