CN103825487A - SiC high-voltage switch and silicon IGBT mixed type three-phase four-wire high-voltage converter - Google Patents

SiC high-voltage switch and silicon IGBT mixed type three-phase four-wire high-voltage converter Download PDF

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CN103825487A
CN103825487A CN201410073322.9A CN201410073322A CN103825487A CN 103825487 A CN103825487 A CN 103825487A CN 201410073322 A CN201410073322 A CN 201410073322A CN 103825487 A CN103825487 A CN 103825487A
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brachium pontis
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module unit
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CN103825487B (en
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张波
丘东元
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South China University of Technology SCUT
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Abstract

The invention provides an SiC high-voltage switch and silicon IGBT mixed type three-phase four-wire high-voltage converter which comprises 2N silicon IGBT low-voltage module units, six SiC high-voltage switches and eight bridge arm inductors. The phase a, the phase b and the phase c of the mixed type three-phase four-wire high-voltage converter are the same in structure, an upper bridge arm is formed by a high-voltage switch and a bridge arm inductor in a series-connecting mode. A lower bridge arm is formed by a bridge arm inductor and a high-voltage switch in a series-connecting mode. Then, the upper bridge arm and the lower bridge arm are connected in series. The connecting point of the upper bridge arm inductor and the lower bridge arm inductor forms an alternating-current output end of a bridge arm with a corresponding phase. An upper bridge arm of a phase o is formed by N low-voltage module units and a bridge arm inductor in a series-connecting mode in sequence, a lower bridge arm is formed by a bridge arm inductor and N low-voltage module units in a series-connecting mode in sequence, then the upper bridge arm and the lower bridge arm are connected in series, and the connecting point of the upper bridge arm inductor and the lower bridge arm inductor forms a middle wire end. The alternating-current output end is connected to load in a three-phase star-shaped connecting mode, the middle wire end is connected to the middle point of the load, by controlling output of the middle wire end, load voltages can generate a sine multi-level phenomenon, and harmonic waves are reduced.

Description

The hybrid three-phase and four-line high tension transformer of SiC high-voltage switch gear and silicon IGBT
Technical field
The invention belongs to converters or high voltage applications field, relate to the structure of SiC high-voltage switch gear and the hybrid three-phase and four-line high tension transformer of silicon IGBT topology.
 
Background technology
Realizing one of key technology of high-voltage high-power converter is high power converter topology, in the world high-voltage large-capacity converter is conducted in-depth research in recent decades, has proposed numerous significant high-voltage large-capacity topologys.Module combination multi-level converter both MMC converter is that current high voltage electric energy converts first-selected converter; its advantage is that each phase brachium pontis is according to electric pressure; be followed in series to form by multiple identical modular power units and two brachium pontis inductance; realize high modularization, there is more obvious advantage at aspects such as device current stress, unbalanced operation, error protections than general multilevel converter.But the modular unit that MMC converter need to be used is many, control more complicated.
The SiC device for power switching of succeeding in developing is in recent years because having the characteristic such as high pressure (reaching tens thousand of volts), high temperature (being greater than 500 ℃), break through silica-based power semiconductor voltage (thousands of volt) and the temperature limitation of (being less than 150 ℃), will become the main devices of high pressure, large capacity commercial Application.But, the price of SiC device for power switching is higher, all adopt and will affect the cost performance of high tension transformer, the present invention proposes a kind of SiC high-voltage switch gear and the hybrid three-phase and four-line high tension transformer of silicon IGBT for this reason, it both can reduce high tension transformer cost, and the circuit that can utilize again silicon IGBT to form is realized multilevel.
 
Summary of the invention
The present invention proposes a kind of SiC high-voltage switch gear and the hybrid three-phase and four-line high tension transformer of silicon IGBT, with the existing MMC converter comparison take silicon IGBT as master, and the one, circuit structure is simple, has reduced components and parts, has reduced the complexity of circuit; The 2nd, control simply, only need to control center line and just can realize mutually voltage with multiple levels output, harmonic wave is little, in high pressure commercial Application, holds out broad prospects.The present invention is achieved through the following technical solutions.
The hybrid three-phase and four-line high tension transformer of SiC high-voltage switch gear and silicon IGBT, it comprises 2N silicon IGBT low-voltage module unit, 6 SiC high-voltage circuit breaker devices and 8 brachium pontis inductance.Wherein the upper brachium pontis of a, b, c three-phase is in series by 1 high-voltage circuit breaker device and brachium pontis inductance, and lower brachium pontis is in series by brachium pontis inductance and 1 high-voltage circuit breaker device, then upper and lower bridge arm series connection; The upper brachium pontis of o phase is followed in series to form by N low-voltage module unit and brachium pontis inductance, and lower brachium pontis is followed in series to form by brachium pontis inductance and N low-voltage module unit, then upper and lower bridge arm series connection; The tie point of upper and lower bridge arm inductance forms ac output end and the center line of corresponding phase brachium pontis, and N is positive integer.
Further, described low-voltage module unit is by 2 silicon IGBT with fly-wheel diode, i.e. the first switching tube and second switch pipe, and 1 DC capacitor forms.The two ends of the first switching tube and second switch pipe are all connected with fly-wheel diode, and the positive pole of the first switching tube is connected with the positive pole of DC capacitor; The negative pole of the first switching tube is connected with the positive pole of second switch pipe, and tie point is O 1end; The negative pole of second switch pipe and DC capacitor C enegative pole connect, tie point is O 2end; Voltage E=V/2N on DC capacitor, the magnitude of voltage that V is input DC power.
Further, there are 4 kinds of operating states described low-voltage module unit, and the first state is that output voltage is E, and electric current is the conducting direction of the first switching tube; The second state is that output voltage is E, and electric current is the conducting direction of the fly-wheel diode of the first switching tube; The third state is that output voltage is 0, and electric current is the conducting direction of second switch pipe; The 4th kind of state is that output voltage is 0, and electric current is the conducting direction of the fly-wheel diode of second switch pipe.
Further, described high-voltage circuit breaker device adopts the SiC device for power switching with fly-wheel diode.
Further, hybrid three-phase and four-line high tension transformer topological structure, a, b, c three-phase structure are identical, the upper brachium pontis of every phase is in series by a high-voltage circuit breaker device and a brachium pontis inductance, be that the positive pole of high-voltage circuit breaker and the positive pole of power supply are connected, negative pole is connected with brachium pontis inductance; The lower brachium pontis of every phase is in series by another brachium pontis inductance and another high-voltage circuit breaker device, and the positive pole of high-voltage circuit breaker is connected with another brachium pontis inductance, and negative pole is connected with the negative pole of power supply; Then upper and lower bridge arm series connection, the tie point of upper and lower bridge arm inductance, a, b, c point form the ac output end of corresponding phase brachium pontis, are connected to the load of three-phase star connecting mode.
Further, hybrid three-phase and four-line high tension transformer topological structure, the upper brachium pontis of o phase is followed in series to form by N low-voltage module unit and a brachium pontis inductance, the O of first low-voltage module unit 1end is U 1be connected with the positive pole of power supply, the O of first low-voltage module unit 2the O of end and second low-voltage module unit 1end is U 2be connected, connect according to this rule, the O of i low-voltage module unit 1end is U ibe connected to the O of i-1 low-voltage module unit 2end, the O of i low-voltage module unit 2end is connected to the O of i+1 low-voltage module unit 1end is U i+1, after N low-voltage module unit connects, the O of N low-voltage module unit 2end is connected with a brachium pontis inductance; The lower brachium pontis of o phase is followed in series to form by another brachium pontis inductance and N low-voltage module unit, i.e. the O of brachium pontis inductance and N+1 low-voltage module unit 1end is U n+1be connected, the O of N+1 low-voltage module unit 2the O of end and N+2 low-voltage module unit 1end is U n+2be connected, connect according to this rule, after the N of lower brachium pontis low-voltage module unit connects, the O of 2N low-voltage module unit 2end is connected to the negative pole of power supply.Then upper and lower bridge arm series connection, the tie point of upper and lower bridge arm inductance is line end during o point forms, center line is connected to load mid point.
Further, by controlling the level output of o phase brachium pontis, the ac output voltage that obtains hybrid three-phase and four-line high tension transformer is sinusoidal many level.
Compared with prior art, tool of the present invention has the following advantages and technique effect:
The present invention is on MMC converter basis, the hybrid three-phase and four-line high tension transformer of a kind of SiC high-voltage switch gear and silicon IGBT is proposed, wherein a, b, c three-phase adopt SiC high-voltage circuit breaker device, reduce the number of devices of high tension transformer, o adopts the low-voltage module circuit being made up of silicon IGBT mutually, to realize multilevel.With the existing MMC converter comparison take silicon IGBT as master, the one, circuit structure is simple, has reduced components and parts, has reduced the complexity of circuit; The 2nd, control simply, only need to control center line and just can realize mutually voltage with multiple levels output, harmonic wave is little, in high pressure commercial Application, holds out broad prospects.
 
Accompanying drawing explanation
Fig. 1 is SiC high-voltage switch gear of the present invention and the hybrid three-phase and four-line high tension transformer of silicon IGBT main circuit diagram.
Fig. 2 is low-voltage module cellular construction figure of the present invention.
Fig. 3 a～Fig. 3 d is respectively four kinds of working state schematic representations of low-voltage module unit.
Fig. 4 is SiC high-voltage switch gear and the hybrid three-phase and four-line high tension transformer of the silicon IGBT structure chart with 2N=4 low-voltage module unit.
Fig. 5 is the 3 level output waveforms with SiC high-voltage switch gear and the hybrid three-phase and four-line high tension transformer of silicon IGBT of 2N=4 low-voltage module unit.
Fig. 6 is the 4 level output waveforms with SiC high-voltage switch gear and the hybrid three-phase and four-line high tension transformer of silicon IGBT of 2N=4 low-voltage module unit.
?
Specific embodiments
Below in conjunction with accompanying drawing, specific embodiment of the invention is further described.
Shown in Fig. 1 is main circuit of the present invention, and the constituted mode of hybrid three-phase and four-line high tension transformer is as follows:
1, a, b, c three-phase structure are identical, and the upper brachium pontis of every phase is in series by a high-voltage circuit breaker device and a brachium pontis inductance, and both the positive pole of high-voltage circuit breaker was connected with the positive pole of power supply V, and negative pole is connected with brachium pontis inductance; The lower brachium pontis of every phase is in series by another brachium pontis inductance and another high-voltage circuit breaker device, and both the positive pole of high-voltage circuit breaker was connected with brachium pontis inductance, and negative pole is connected with the negative pole of power supply V; Shown in Fig. 2 is low-voltage module cellular construction of the present invention, and low-voltage module unit is by 2 silicon IGBT device for power switching with fly-wheel diode, i.e. the first switch transistor T 1with second switch pipe T 2, and 1 DC capacitor forms.The first switch transistor T 1positive pole and DC capacitor C epositive pole be connected; The first switch transistor T 1negative pole and second switch pipe T 2positive pole connect, tie point is O 1end; Second switch pipe T 2negative pole and DC capacitor C enegative pole connect, tie point is O 2end; DC capacitor C eon voltage E=V/2N, the magnitude of voltage that V is input DC power.
2, the upper brachium pontis of o phase is followed in series to form by N low-voltage module unit and a brachium pontis inductance, first low-voltage module unit M 1o 1end is U 1be connected with the positive pole of power supply V, first low-voltage module unit M 1o 2end and second low-voltage module unit M 2o 1end is U 2be connected, connect according to this rule, i low-voltage module unit M io 1end is U ibe connected to i-1 low-voltage module unit M i-1o 2end, i low-voltage module unit M io 2end is connected to i+1 low-voltage module unit M i+1o 1end is U i+1, after N low-voltage module unit connects, N low-voltage module unit M no 2end is connected with a brachium pontis inductance; Lower brachium pontis is followed in series to form by another brachium pontis inductance and N low-voltage module unit, i.e. brachium pontis inductance and N+1 low-voltage module unit M n+1o 1end is U n+1be connected, N+1 low-voltage module unit M n+1o 2end and N+2 low-voltage module unit M n+2o 1end is U n+2be connected, connect according to this rule, after the N of lower brachium pontis low-voltage module unit connects, 2N low-voltage module unit M 2No 2end is connected to the negative pole of power supply V.
3, the tie point at brachium pontis inductance by the upper and lower bridge arm of a, b, c, o tetra-phases, both a, b, c, o point place connected, and a, b, 3 of c connect with three-phase star load, and o point connects with load mid point.
According to the low-voltage module cellular construction of Fig. 1, low-voltage module unit has 4 kinds of operating states.Wherein Fig. 3 a is the first operating state, both the first switch transistor T 1conducting, module output voltage U o1-U o2=E; Fig. 3 b is the second operating state, both the sustained diode of the first switching tube 1conducting, module output voltage U o1-U o2=E; Fig. 3 c is the third operating state, both second switch pipe T 2conducting.Module output voltage U o1-U o2=0; Fig. 3 d is the 4th kind of operating state, the both sustained diode of second switch pipe 2conducting, module output voltage U o1-U o2=0.
Fig. 4 is SiC high-voltage switch gear and the hybrid three-phase and four-line high tension transformer of silicon IGBT with 2N=4 low-voltage module unit, comprises 4 silicon IGBT low-voltage module unit M 1~ M 4, 6 SiC high-voltage circuit breaker device S 1~ S 6with 8 brachium pontis inductance that inductance value is identical l.Adopt Multilevel modulation strategy adjustment center line phase voltage V o, can realize threephase load voltage V ao, V bo, V comany level output, wherein the output waveform of three level and four level is shown in respectively Fig. 5 and Fig. 6.

Claims (8)

  1. The hybrid three-phase and four-line high tension transformer of 1.SiC high-voltage switch gear and silicon IGBT, is characterized in that comprising 2N silicon IGBT low-voltage module unit, 6 SiC high-voltage switch gears and 8 brachium pontis inductance; In hybrid three-phase and four-line brachium pontis high tension transformer, the upper brachium pontis of a, b, c three-phase is in series by 1 high-voltage switch gear and brachium pontis inductance, and lower brachium pontis is in series by brachium pontis inductance and 1 high-voltage switch gear, then upper and lower bridge arm series connection; In hybrid three-phase and four-line brachium pontis high tension transformer, the upper brachium pontis of o phase is followed in series to form by N low-voltage module unit and brachium pontis inductance, and lower brachium pontis is followed in series to form by brachium pontis inductance and N low-voltage module unit, then upper and lower bridge arm series connection; The tie point of upper and lower bridge arm inductance forms ac output end and the center line of corresponding phase brachium pontis, and N is positive integer.
  2. 2. the hybrid three-phase and four-line high tension transformer of SiC high-voltage switch gear and silicon IGBT according to claim 1, is characterized in that, by 2, the silicon IGBT with fly-wheel diode and 1 DC capacitor form in described low-voltage module unit.
  3. 3. the hybrid three-phase and four-line high tension transformer of SiC high-voltage switch gear and silicon IGBT according to claim 2, is characterized in that, described low-voltage module unit comprises the first switching tube (T 1) and second switch pipe (T 2), the first switching tube (T 1) and second switch pipe (T 2) two ends be all connected with fly-wheel diode, be respectively the first fly-wheel diode (D 1) and the second fly-wheel diode (D 2); The first switching tube (T 1) positive pole and DC capacitor (C e) positive pole connect; The first switching tube (T 1) negative pole and second switch pipe (T 2) positive pole connect, tie point is O 1end; Second switch pipe (T 2) negative pole and DC capacitor (C e) negative pole connect, tie point is O 2end; DC capacitor (C e) on voltage E=V/2N, the magnitude of voltage that V is input DC power.
  4. 4. the hybrid three-phase and four-line high tension transformer of SiC high-voltage switch gear and silicon IGBT according to claim 3, is characterized in that, there are 4 kinds of operating states described low-voltage module unit, and the first state is that output voltage is E, and electric current is the first switching tube (T 1) conducting direction; The second state is that output voltage is E, and electric current is the first switching tube (T 1) fly-wheel diode (D 1) conducting direction; The third state is that output voltage is 0, and electric current is second switch pipe (T 2) conducting direction; The 4th kind of state is that output voltage is 0, and electric current is second switch pipe (T 2) fly-wheel diode (D 2) conducting direction.
  5. 5. the hybrid three-phase and four-line high tension transformer of SiC high-voltage switch gear and silicon IGBT according to claim 1, is characterized in that, described high-voltage switch gear adopts the SiC device for power switching with fly-wheel diode.
  6. 6. the hybrid three-phase and four-line high tension transformer of SiC high-voltage switch gear and silicon IGBT according to claim 1, it is characterized in that, in the topological structure of hybrid three-phase and four-line high tension transformer, a, b, c three-phase structure are identical, the upper brachium pontis of every phase is in series by a high-voltage circuit breaker device and a brachium pontis inductance, the positive pole that is high-voltage circuit breaker is connected with the positive pole of power supply (V), and negative pole is connected with brachium pontis inductance; The lower brachium pontis of every phase is in series by another brachium pontis inductance and another high-voltage circuit breaker device, and the positive pole of high-voltage circuit breaker is connected with brachium pontis inductance, and negative pole is connected with the negative pole of power supply (V).
  7. 7. the hybrid three-phase and four-line high tension transformer of SiC high-voltage switch gear and silicon IGBT according to claim 3, it is characterized in that, in hybrid three-phase and four-line high tension transformer topological structure, the upper brachium pontis of o phase is followed in series to form by N low-voltage module unit and a brachium pontis inductance, first low-voltage module unit (M 1) O 1end is U 1be connected with the positive pole of power supply (V), first low-voltage module unit (M 1) O 2end and second low-voltage module unit (M 2) O 1end is U 2be connected, connect according to this rule, i low-voltage module unit (M i) O 1end is U ibe connected to i-1 low-voltage module unit (M i-1) O 2end, i low-voltage module unit (M i) O 2end is connected to i+1 low-voltage module unit (M i+1) O 1end is U i+1, after N low-voltage module unit connects, N low-voltage module unit (M n) O 2end is connected with a brachium pontis inductance; Lower brachium pontis is followed in series to form by another brachium pontis inductance and N low-voltage module unit, i.e. brachium pontis inductance and N+1 low-voltage module unit (M n+1) O 1end is U n+1be connected, N+1 low-voltage module unit (M n+1) O 2end and N+2 low-voltage module unit (M n+2) O 1end is U n+2be connected, connect according to this rule, after the N of lower brachium pontis low-voltage module unit connects, 2N low-voltage module unit (M 2N) O 2end is connected to the negative pole of power supply (V).
  8. 8. the hybrid three-phase and four-line high tension transformer of SiC high-voltage switch gear according to claim 1 and silicon IGBT, is characterized in that, by controlling the level output of o phase brachium pontis, obtaining ac output voltage is sinusoidal many level.
CN201410073322.9A 2014-02-28 2014-02-28 SiC high-voltage switch gear and silicon IGBT hybrid three-phase and four-line high tension transformer Active CN103825487B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201774475U (en) * 2010-07-22 2011-03-23 荣信电力电子股份有限公司 Topological structure for transformer-free solar inverter based on MMC
JP2013027260A (en) * 2011-07-26 2013-02-04 Hitachi Ltd Power conversion apparatus
CN102983584A (en) * 2012-07-13 2013-03-20 中电普瑞科技有限公司 Unified power flow controller used for unbalanced system
CN203722509U (en) * 2014-02-28 2014-07-16 华南理工大学 Sic high-voltage switch and silicon IGBT hybrid type three-phase four-wire high-voltage converter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201774475U (en) * 2010-07-22 2011-03-23 荣信电力电子股份有限公司 Topological structure for transformer-free solar inverter based on MMC
JP2013027260A (en) * 2011-07-26 2013-02-04 Hitachi Ltd Power conversion apparatus
CN102983584A (en) * 2012-07-13 2013-03-20 中电普瑞科技有限公司 Unified power flow controller used for unbalanced system
CN203722509U (en) * 2014-02-28 2014-07-16 华南理工大学 Sic high-voltage switch and silicon IGBT hybrid type three-phase four-wire high-voltage converter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
韦延方等: "适用于电压源换流器型高压直流输电的模块化多电平换流器最新研究进展", 《高电压技术》 *

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