CN103824941A - Solar cell device and preparation method thereof - Google Patents

Solar cell device and preparation method thereof Download PDF

Info

Publication number
CN103824941A
CN103824941A CN201210468604.XA CN201210468604A CN103824941A CN 103824941 A CN103824941 A CN 103824941A CN 201210468604 A CN201210468604 A CN 201210468604A CN 103824941 A CN103824941 A CN 103824941A
Authority
CN
China
Prior art keywords
rhenium
solar cell
cell device
oxide
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201210468604.XA
Other languages
Chinese (zh)
Inventor
周明杰
王平
黄辉
陈吉星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
Original Assignee
Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oceans King Lighting Science and Technology Co Ltd, Shenzhen Oceans King Lighting Engineering Co Ltd filed Critical Oceans King Lighting Science and Technology Co Ltd
Priority to CN201210468604.XA priority Critical patent/CN103824941A/en
Publication of CN103824941A publication Critical patent/CN103824941A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a solar cell device comprising an anode, a hole buffer layer, an active layer, a hole barrier layer, an electron buffer layer and a cathode which are laminated in turn. The material of the active layer is mixture of poly 3-hexyl thiophene and methyl butyrate of fullerene. The material of the hole barrier layer comprises oxides of rhenium and graphite. The oxides of rhenium are selected from at least one of rhenium dioxide, rhenium heptoxide, rhenium trioxide and oxide rhenium. The solar cell device is relatively high in energy conversion efficiency. Besides, the invention also provides a preparation method of the solar cell device.

Description

Solar cell device and preparation method thereof
[technical field]
The present invention relates to a kind of solar cell device and preparation method thereof.
[background technology]
Solar cell device owing to thering is cheapness, the advantage such as clean, renewable is widely used.Conventional solar cell device structure comprises the anode, Hole-injecting Buffer Layer for Improvement, active layer, electron buffer layer and the negative electrode that stack gradually at present.The exciton dissociation of active layer produces after hole and electronics, and hole arrives anode, and electronics arrives negative electrode, thereby is collected by electrode, forms effective power conversion.At present, the energy conversion efficiency of traditional solar cell is lower.
[summary of the invention]
Based on this, be necessary to provide solar cell device that a kind of energy conversion efficiency is higher and preparation method thereof.
A kind of solar cell device, comprise the anode, Hole-injecting Buffer Layer for Improvement, active layer, hole blocking layer, electron buffer layer and the negative electrode that stack gradually, the material of described active layer is the mixture of the methyl butyrate of poly-3-hexyl thiophene and fullerene, the material of described hole blocking layer comprises oxide and the graphite of rhenium, and the oxide of described rhenium is selected from least one in rhenium dioxide, rhenium heptoxide, rhenium sesquioxide and oxidation two rheniums.
In a preferred embodiment, the thickness of described hole blocking layer is 10nm ~ 50nm.
In a preferred embodiment, the oxide of described rhenium and the mass ratio of described graphite are 10:1 ~ 1:5.
In a preferred embodiment, the material of described electron buffer layer is selected from least one in cesium azide, lithium fluoride, lithium carbonate and cesium carbonate.
In a preferred embodiment, the material of described Hole-injecting Buffer Layer for Improvement is the mixture of poly-3,4-dioxy ethene thiophene and polyphenyl sulfonate.
A preparation method for solar cell device, comprises the following steps:
On anode surface, Hole-injecting Buffer Layer for Improvement and active layer are prepared in spin coating successively, and the material of described active layer is the mixture of the methyl butyrate of poly-3-hexyl thiophene and fullerene;
Hole blocking layer is prepared on the surface that the suspension of the oxide that contains rhenium and graphite is spin-coated on to described active layer, and the oxide of described rhenium is selected from least one in rhenium dioxide, rhenium heptoxide, rhenium sesquioxide and oxidation two rheniums; And
Prepare electron buffer layer and negative electrode on described hole blocking layer surface successively evaporation.
In a preferred embodiment, the thickness of described hole blocking layer is 10nm ~ 50nm.
In a preferred embodiment, the oxide of described rhenium and the mass ratio of described graphite are 1:5 ~ 10:1.
In a preferred embodiment, when hole blocking layer is prepared in spin coating, rotating speed is 500rpm ~ 6000rpm, and the time is 5 seconds ~ 60 seconds.
In a preferred embodiment, the oxide of described rhenium and the mass ratio of described graphite are 10:1 ~ 1:5.
Above-mentioned solar cell device and preparation method thereof, the oxide of rhenium is mixed with graphite, being configured to the aqueous solution is spun to and on active layer, prepares Hole-injecting Buffer Layer for Improvement, the oxide work function of rhenium-below 5.8eV, there is potential barrier with the HOMO energy level of active layer, hole is just blocked in active layer, thereby anode direction transmission, collected by anode, improved anode and collected the efficiency in hole, thereby improved photoelectric conversion efficiency; Graphite has very strong conductivity, is conducive to the transmission of electronics, thereby the energy conversion efficiency of solar cell device is higher.
[accompanying drawing explanation]
By the more specifically explanation of the preferred embodiments of the present invention shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.In whole accompanying drawings, identical Reference numeral is indicated identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation of the solar cell device of an embodiment;
Fig. 2 is the preparation method's of the solar cell device of an embodiment flow chart;
Fig. 3 is the solar cell device of embodiment 1 and current density and the voltage relationship figure of traditional solar cell device.
[embodiment]
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.A lot of details are set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public concrete enforcement.
Refer to Fig. 1, the solar cell device 100 of an embodiment comprises the anode 10, Hole-injecting Buffer Layer for Improvement 20, active layer 30, hole blocking layer 40, electron buffer layer 50 and the negative electrode 60 that stack gradually.
Anode 10 is indium tin oxide glass (ITO), the tin oxide glass (FTO) of mixing fluorine, mixes the zinc oxide glass (AZO) of aluminium or mixes the zinc oxide glass (IZO) of indium.
Hole-injecting Buffer Layer for Improvement 20 is formed at anode 10 surfaces.The material of Hole-injecting Buffer Layer for Improvement 20 is poly-3,4-dioxy ethene thiophene (PEDOT) and the mixture of polyphenyl sodium sulfonate (PSS).Wherein the mass ratio of PEDOT and PSS is 2:1 ~ 6:1, is preferably 6:1.The thickness of Hole-injecting Buffer Layer for Improvement 20 is 20nm ~ 80nm, is preferably 40nm.
Active layer 30 is formed at Hole-injecting Buffer Layer for Improvement 20 surfaces.The material of active layer 30 is poly-3-hexyl thiophene (P3HT) and the mixture of the methyl butyrate derivative (PCBM) of fullerene.Wherein the quality of P3HT:PCBM is that 1:0.5 ~ 1:4 is preferably 1:1.The thickness of active layer 30 is 80nm ~ 300nm, is preferably 120nm.
Hole blocking layer 40 is formed at active layer 30 surfaces.The material of Hole-injecting Buffer Layer for Improvement 40 comprises oxide and the graphite of rhenium.The oxide of rhenium is selected from rhenium dioxide (ReO 2), rhenium heptoxide (Re 2o 7), rhenium sesquioxide (Re 2o 3) and oxidation two rhenium (Re 2o) at least one in.The oxide of rhenium and the mass ratio of described graphite are 10:1 ~ 1:5.The thickness of Hole-injecting Buffer Layer for Improvement 40 is 10nm ~ 50nm.
Electron buffer layer 50 is formed at hole blocking layer 40 surfaces.The material of electron buffer layer 50 is selected from cesium azide (CsN 3), lithium fluoride (LiF), lithium carbonate (Li 2cO 3) and cesium carbonate (Cs 2cO 3) at least one, be preferably LiF.The thickness of electron buffer layer 50 is 0.5nm ~ 10nm, is preferably 1nm.
Negative electrode 60 is formed at electron buffer layer 50 surfaces.The material of negative electrode 60 is selected from least one in aluminium (Al), silver (Ag), gold (Au) and platinum (Pt), is preferably Al.The thickness of negative electrode 60 is 80nm ~ 300nm, is preferably 150nm.
This solar cell device 100, the oxide of rhenium is mixed with graphite, being configured to the aqueous solution is spun to and on active layer 30, prepares Hole-injecting Buffer Layer for Improvement 40, the oxide work function of rhenium-below 5.8eV, there is potential barrier with the HOMO energy level of active layer, hole is just blocked in active layer 30, thereby anode 10 direction transmission, collected by anode 10, improved anode 10 and collected the efficiency in hole, thereby improved photoelectric conversion efficiency; Graphite has very strong conductivity, is conducive to the transmission of electronics, thereby the energy conversion efficiency of solar cell device 100 is higher.
It should be noted that, above-mentioned solar cell device 100 can also arrange other functional layers as required.
Please refer to Fig. 2, the preparation method of the solar cell device 100 of an embodiment, it comprises the following steps:
Step S110, on anode 10 surfaces, Hole-injecting Buffer Layer for Improvement 20 and active layer 30 are prepared in spin coating successively.
Anode 10 is indium tin oxide glass (ITO), the tin oxide glass (FTO) of mixing fluorine, mixes the zinc oxide glass (AZO) of aluminium or mixes the zinc oxide glass (IZO) of indium.
In present embodiment, antianode 10 pre-treatments comprise that organic pollution and the antianode 10 of removing anode 10 surfaces wait oxonium ion processing.Anode 10 is adopted to liquid detergent, deionized water, acetone, ethanol, the each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution on substrate 10 surfaces; It is 5min ~ 15min that antianode 10 waits the oxonium ion processing time, and power is 10 ~ 50W.
Hole-injecting Buffer Layer for Improvement 20 is by the solution preparation that contains hole padded coaming in the surperficial spin coating of anode 10.The rotating speed of spin coating is 2000rpm ~ 6000rpm, and the time is 10s ~ 30s.Layer hole padded coaming is poly-3,4-dioxy ethene thiophene (PEDOT) and the mixture of polyphenyl sodium sulfonate (PSS).Wherein the mass ratio of PEDOT and PSS is 2:1 ~ 6:1, is preferably 6:1.In the solution that contains hole padded coaming, the mass concentration of hole padded coaming is 1% ~ 5%, is preferably 1.3%, and solvent is water.After spin coating, at 100 ℃ ~ 200 ℃, add 15 minutes ~ 60 minutes, preferably at 200 ℃, heat 30 minutes.The thickness of Hole-injecting Buffer Layer for Improvement 20 is 20nm ~ 80nm, is preferably 40nm.
Active layer 30 is spin-coated on Hole-injecting Buffer Layer for Improvement 20 surfaces by active layer solution and makes.The rotating speed of spin coating is 4000rpm ~ 6000rpm, and the time is 10s ~ 30s.In active layer solution, the concentration of active layer material is 8mg/ml ~ 30mg/ml, is preferably 12mg/ml.The solvent of active layer solution is selected from least one in toluene, dimethylbenzene, chlorobenzene and chloroform, is preferably chlorobenzene.Active layer material is poly-3-hexyl thiophene (P3HT) and the mixture of the methyl butyrate derivative (PCBM) of fullerene.Wherein the quality of P3HT:PCBM is that 1:0.5 ~ 1:4 is preferably 1: 1.Spin coating active layer 30 carries out in the glove box that is full of inert gas, anneals 5 minutes ~ 100 minutes afterwards, or at room temperature place 24 ~ 48 hours at 50 ℃ ~ 200 ℃, preferably at 200 ℃, anneals 15 minutes.The thickness of active layer 30 is 80nm ~ 300nm, is preferably 120nm.
Hole blocking layer 40 is prepared on step S120, the surface that the suspension of the oxide that contains rhenium and graphite is spin-coated on to active layer 30.
The oxide of rhenium is selected from rhenium dioxide (ReO 2), rhenium heptoxide (Re 2o 7), rhenium sesquioxide (Re 2o 3) and oxidation two rhenium (Re 2o) at least one in.The oxide of rhenium and the mass ratio of described graphite are 10:1 ~ 1:5.In the oxide that contains rhenium and the suspension of graphite, the mass concentration of the oxide of rhenium is 1% ~ 5%, and the mass concentration of graphite is 0.5% ~ 5%, and solvent is water.The rotating speed of spin coating is 500rpm ~ 6000rpm, and the time is 5 seconds ~ 60 seconds.Dry after spin coating, the thickness of the hole blocking layer 40 obtaining is 10nm ~ 50nm.
Step S130, prepare electron buffer layer 50 and negative electrode 60 on active layer 30 surfaces successively evaporation.
Electron buffer layer 50 is formed at active layer 30 surfaces.The material of electron buffer layer 50 is selected from cesium azide (CsN 3), lithium fluoride (LiF), lithium carbonate (Li 2cO 3) and cesium carbonate (Cs 2cO 3) at least one, be preferably LiF.The thickness of electron buffer layer 50 is 0.5nm ~ 10nm, is preferably 0.7nm.Evaporation is 3 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 0.1nm/s ~ 1nm/s.
Negative electrode 60 is formed at electron buffer layer 50 surfaces.The material of negative electrode 60 is selected from least one in aluminium (Al), silver (Ag), gold (Au) and platinum (Pt), is preferably Al.The thickness of negative electrode 60 is 80nm ~ 300nm, is preferably 150nm.Evaporation is 3 × 10 at vacuum pressure -3~ 2 × 10 -4under Pa, carry out, evaporation speed is 1nm/s ~ 10nm/s.
Above-mentioned solar cell device preparation method, hole blocking layer is prepared by spin coating, and on the one hand, spin coating proceeding is simply controlled, and meanwhile, active layer is also to adopt spin coating preparation, therefore, can make two-layer compatibility be strengthened; What when spin coating hole blocking layer, use is the aqueous solution, and what when spin coating active layer, use is organic solvent, and the two is not easy infiltration, is conducive to interfacial separation, and then is conducive to the transmission of electronics.
Below in conjunction with specific embodiment, the preparation method of solar cell device provided by the invention is elaborated.
The preparation used of the embodiment of the present invention and comparative example and tester are: high vacuum coating equipment (scientific instrument development center, Shenyang Co., Ltd, pressure <1 × 10 -32602), the white light source that is simulated solar irradiation with the filter set cooperation of 500W xenon lamp (Osram) and AM 1.5 Pa), current-voltage tester (Keithly company of the U.S., model:.
Embodiment 1
Structure prepared by the present embodiment is ITO/PEDOT:PSS/P3HT:PCBM/Re 2o 7: the solar cell device of graphite/LiF/Al.
First ITO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface; Clean up and rear conductive substrates is carried out to oxygen plasma treatment, the processing time is 5-15min, and power is 10-50W; The aqueous solution of the PEDOT:PSS that spin coating mass fraction is 1.3% in above-mentioned substrate is prepared Hole-injecting Buffer Layer for Improvement, the mass ratio of PEDOT and PSS is 6:1, and the rotating speed of spin coating is 3000rpm, and the time is 25s, after spin coating, heat 30 minutes at 200 ℃, Hole-injecting Buffer Layer for Improvement thickness is 40nm; Then spin coating active layer, the P3HT:PCBM solution spin coating that active layer is 12mg/ml by concentration forms, and solvent is chlorobenzene, wherein the quality of P3HT and PCBM is 1:1, and the rotating speed of spin coating is 5500rpm, and the time is 20s, after spin coating, anneal 5 minutes at 200 ℃, active layer thickness is 120nm; Spin coating contains Re 2o 7and the suspension of graphite is prepared hole blocking layer, Re in suspension 2o 7mass fraction is 1.5%, and the mass fraction of graphite is 2%, adopts spin coating preparation, and rotating speed is 4000rpm, and the time is 10s, and the thickness of the hole blocking layer obtaining after oven dry is 20nm; Evaporation electron buffer layer, material is LiF, and thickness is 0.7nm, and evaporation is 5 × 10 at vacuum pressure -4under Pa, carry out, evaporation speed is 0.2nm/s; Evaporation negative electrode, material is Al, and thickness is 150nm, and evaporation is 5 × 10 at vacuum pressure -4under Pa, carry out, evaporation speed is 3nm/s, finally obtains needed polymer solar battery.
Refer to Fig. 3, the structure that is depicted as preparation in embodiment 1 is ITO/PEDOT:PSS/P3HT:PCBM/Re 2o 7: the solar cell device (curve 1) of graphite/LiF/Al is current density and the voltage relationship of ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al solar cell device (curve 2) with traditional structure, and the structure that table 1 is depicted as preparation in embodiment 1 is ITO/PEDOT:PSS/P3HT:PCBM/Re 2o 7: the solar cell device of graphite/LiF/Al and traditional structure are current density, voltage, energy conversion efficiency (η) and the fill factor, curve factor data of ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al solar cell device.In the solar cell device that in traditional solar cell device, each layer thickness is prepared with embodiment 1, each layer thickness is identical.
Table 1
? Current density (mA/cm 2） Voltage (V) η（%） Fill factor, curve factor
Curve 1 10.90 0.69 2.86 0.38
Curve 2 8.65 0.67 2.15 0.37
Can see from table 1 and Fig. 3, conventional solar cell device current density is 8.65mA/cm 2, and solar cell device current density prepared by embodiment 1 has been brought up to 10.90mA/cm 2, this explanation, the present invention, by preparing hole blocking layer,, thereby makes hole transmit toward anode direction by hole barrier at active layer anode on one side, is finally collected by anode, improves photoelectric conversion efficiency.The energy conversion efficiency of traditional solar cell device is 2.15%, and the energy conversion efficiency of solar cell device prepared by embodiment 1 is 2.86%.
The current density of each embodiment and voltage curve, current density, voltage, energy conversion efficiency and fill factor, curve factor are all similar with embodiment 1 below, and each solar cell device also has similar energy conversion efficiency, repeats no more below.
Embodiment 2
Structure prepared by the present embodiment is IZO/PEDOT:PSS/P3HT:PCBM/ReO 2: graphite/Cs 2cO 3the solar cell device of/Au.
First IZO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface; Clean up and rear conductive substrates is carried out to oxygen plasma treatment, the processing time is 5-15min, and power is 10-50W; Spin coating Hole-injecting Buffer Layer for Improvement, adopts the PEDOT:PSS aqueous solution that weight ratio is 2:1, and mass fraction is 5%, and the rotating speed of spin coating is 2000rpm, and the time is 30s, after spin coating, at 200 ℃, heats 15min, and THICKNESS CONTROL is at 80nm.Spin coating active layer, material is P3HT:PCBM, and solvent is chloroform, and concentration is 24mg/ml, and mass ratio is 1:4, and the rotating speed of spin coating is 4000rpm, and the time is 12s, the 20min that anneals at 100 ℃ after spin coating, thickness is 160nm; Hole blocking layer is prepared in spin coating, and described hole blocking layer is ReO 2adulterate and prepare the aqueous solution with graphite.The oxide mass mark of rhenium is 5%, and the mass fraction of graphite is 0.5%, adopts spin coating preparation, and rotating speed is 500rpm, and the time is 5s, and after drying, thickness is 50nm; Evaporation is prepared electron buffer layer, and material is Cs 2cO 3, thickness is 5nm, evaporation is 2 × 10 at vacuum pressure -4under Pa, carry out, evaporation speed is 0.1nm/s; Evaporation negative electrode, material is Au, and thickness is 300nm, and evaporation is 2 × 10 at vacuum pressure -4under Pa, carry out, evaporation speed is 1nm/s.Finally obtain desired polymer solar cell device.
Embodiment 3
Structure prepared by the present embodiment is FTO/PEDOT:PSS/P3HT:PCBM/Re 2o 3: graphite/CsN 3the solar cell device of/Ag.
First FTO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface; Clean up and rear conductive substrates is carried out to oxygen plasma treatment, the processing time is 5-15min, and power is 10-50W; Spin coating Hole-injecting Buffer Layer for Improvement, adopts the PEDOT:PSS aqueous solution that weight ratio is 6:1, and mass fraction is 1%,, the rotating speed of spin coating is 6000rpm, and the time is 10s, after spin coating, at 100 ℃, heats 60min, and THICKNESS CONTROL is at 20nm; Spin coating active layer, material is P3HT:PCBM, and solvent is dimethylbenzene, and concentration is 16mg/ml, and mass ratio is 1:0.5, and the rotating speed of spin coating is 4000rpm, and the time is 10s, the 100min that anneals at 100 ℃ after spin coating, thickness is 200nm; Hole blocking layer is prepared in spin coating, and described hole blocking layer is Re 2o 3adulterate and prepare the aqueous solution with graphite.The oxide mass mark of rhenium is 1%, and the mass fraction of graphite is 5%, adopts spin coating preparation, and rotating speed is 6000rpm, and the time is 10s, and after drying, thickness is 10nm; Evaporation electron buffer layer, material is CsN 3, thickness is 10nm, evaporation is 3 × 10 at vacuum pressure -3under Pa, carry out, evaporation speed is 1nm/s; Evaporation negative electrode, material is Ag, and thickness is 80nm, and evaporation is 3 × 10 at vacuum pressure -3under Pa, carry out, evaporation speed is 10nm/s.Finally obtain desired polymer solar cell device.
Embodiment 4
Structure prepared by the present embodiment is ITO/PEDOT:PSS/P3HT:PCBM/Re 2o: graphite/Li 2cO 3the solar cell device of/Pt.
First ITO is carried out to photoetching treatment, be cut into needed size, use successively liquid detergent, deionized water, acetone, ethanol, the each ultrasonic 15min of isopropyl alcohol, the organic pollution of removal glass surface; Clean up and rear conductive substrates is carried out to oxygen plasma treatment, the processing time is 5-15min, and power is 10-50W; Spin coating Hole-injecting Buffer Layer for Improvement, adopts the PEDOT:PSS aqueous solution that weight ratio is 4:1, and mass fraction is 3.5%, and the rotating speed of spin coating is 4000rpm, and the time is 15s, after spin coating, at 150 ℃, heats 40min, and THICKNESS CONTROL is at 35nm; Spin coating active layer, material is P3HT:PCBM, and solvent is toluene, and concentration is 8mg/ml, and mass ratio is 1:2, and the rotating speed of spin coating is 5000rpm, and the time is 18s, the 100min that anneals at 70 ℃ after spin coating, thickness is 300nm; Hole blocking layer is prepared in spin coating, and described hole blocking layer is Re 2o and graphite adulterate and prepare the aqueous solution.The oxide mass mark of rhenium is 3%, and the mass fraction of graphite is 0.8%, adopts spin coating preparation, and rotating speed is 3000rpm, and the time is 60s, and after drying, thickness is 15nm; Evaporation electron buffer layer, material is Li 2cO 3, thickness is 1nm, evaporation is 8 × 10 at vacuum pressure -4under Pa, carry out, evaporation speed is 0.2nm/s; Evaporation negative electrode, material is Pt,, evaporation is 8 × 10 at vacuum pressure -4under Pa, carry out, evaporation speed is that 7nm/s thickness is 100nm.Finally obtain desired polymer solar cell device.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.

Claims (10)

1. a solar cell device, it is characterized in that, comprise the anode, Hole-injecting Buffer Layer for Improvement, active layer, hole blocking layer, electron buffer layer and the negative electrode that stack gradually, the material of described active layer is the mixture of the methyl butyrate of poly-3-hexyl thiophene and fullerene, the material of described hole blocking layer comprises oxide and the graphite of rhenium, and the oxide of described rhenium is selected from least one in rhenium dioxide, rhenium heptoxide, rhenium sesquioxide and oxidation two rheniums.
2. solar cell device according to claim 1, is characterized in that: the thickness of described hole blocking layer is 10nm ~ 50nm.
3. solar cell device according to claim 1, is characterized in that: the oxide of described rhenium and the mass ratio of described graphite are 10:1 ~ 1:5.
4. solar cell device according to claim 1, is characterized in that: the material of described electron buffer layer is selected from least one in cesium azide, lithium fluoride, lithium carbonate and cesium carbonate.
5. solar cell device according to claim 1, is characterized in that: the material of described Hole-injecting Buffer Layer for Improvement is the mixture of poly-3,4-dioxy ethene thiophene and polyphenyl sulfonate.
6. a preparation method for solar cell device, is characterized in that, comprises the following steps:
On anode surface, Hole-injecting Buffer Layer for Improvement and active layer are prepared in spin coating successively, and the material of described active layer is the mixture of the methyl butyrate of poly-3-hexyl thiophene and fullerene;
Hole blocking layer is prepared on the surface that the suspension of the oxide that contains rhenium and graphite is spin-coated on to described active layer, and the oxide of described rhenium is selected from least one in rhenium dioxide, rhenium heptoxide, rhenium sesquioxide and oxidation two rheniums; And
Prepare electron buffer layer and negative electrode on described hole blocking layer surface successively evaporation.
7. the preparation method of solar cell device according to claim 6, is characterized in that: the thickness of described hole blocking layer is 10nm ~ 50nm.
8. the preparation method of solar cell device according to claim 6, is characterized in that: the oxide of described rhenium and the mass ratio of described graphite are 10:1 ~ 1:5.
9. the preparation method of solar cell device according to claim 6, is characterized in that: when hole blocking layer is prepared in spin coating, rotating speed is 500rpm ~ 6000rpm, and the time is 5 seconds ~ 60 seconds.
10. the preparation method of solar cell device according to claim 6, is characterized in that: described in contain rhenium oxide and the suspension of graphite described in the quality percentage composition of oxide of rhenium be 1% ~ 5%.
CN201210468604.XA 2012-11-19 2012-11-19 Solar cell device and preparation method thereof Pending CN103824941A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210468604.XA CN103824941A (en) 2012-11-19 2012-11-19 Solar cell device and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210468604.XA CN103824941A (en) 2012-11-19 2012-11-19 Solar cell device and preparation method thereof

Publications (1)

Publication Number Publication Date
CN103824941A true CN103824941A (en) 2014-05-28

Family

ID=50759895

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210468604.XA Pending CN103824941A (en) 2012-11-19 2012-11-19 Solar cell device and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103824941A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101562231A (en) * 2009-05-08 2009-10-21 北京大学 Strong correlation electron system-based organic solar cell and preparation method thereof
WO2011131864A1 (en) * 2010-04-22 2011-10-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Organic heterojunction solar cell in a space including an electrically active layer and having vertical segregation
CN102368537A (en) * 2011-10-30 2012-03-07 中国乐凯胶片集团公司 High-stability organic solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101562231A (en) * 2009-05-08 2009-10-21 北京大学 Strong correlation electron system-based organic solar cell and preparation method thereof
WO2011131864A1 (en) * 2010-04-22 2011-10-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Organic heterojunction solar cell in a space including an electrically active layer and having vertical segregation
CN102368537A (en) * 2011-10-30 2012-03-07 中国乐凯胶片集团公司 High-stability organic solar cell

Similar Documents

Publication Publication Date Title
CN102856498B (en) Parallel type polymer solar cell and preparation method thereof
CN102810640B (en) A kind of inversion type polymer solar battery and preparation method thereof
CN102956826B (en) Polymer solar battery and preparation method thereof
CN102790177B (en) Polymer solar battery and preparation method thereof
CN103824940A (en) Solar cell device and preparation method thereof
CN102810639A (en) Parallel polymer solar cell and preparation method thereof
CN104253216A (en) Solar cell device and production method thereof
CN103824941A (en) Solar cell device and preparation method thereof
CN103824942A (en) Solar cell device and preparation method thereof
CN104253167A (en) Solar cell device and production method thereof
CN103928621A (en) Polymer solar cell and preparation method thereof
CN103022359B (en) Solar cell device and preparation method thereof
CN104253213A (en) Solar cell device and production method thereof
CN102856497B (en) P-type doped parallel polymer solar cell and preparation method thereof
CN103824943A (en) Solar cell device and preparation method thereof
CN103824949A (en) Solar cell device and preparation method thereof
CN102810642A (en) Polymer solar cell and preparation method thereof
CN103824944A (en) Solar cell device and preparation method thereof
CN103824948A (en) Solar cell device and preparation method thereof
CN103296207A (en) Solar battery element and preparation method thereof
CN102810641A (en) Polymer solar cell and preparation method thereof
CN104253221A (en) Solar cell device and method for manufacturing same
CN104253211A (en) Solar cell device and method for manufacturing same
CN104253220A (en) Solar cell device and production method thereof
CN104253218A (en) Solar cell device and production method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140528