CN103824911A - Device for testing light intensity and wavelength through photoluminescence - Google Patents
Device for testing light intensity and wavelength through photoluminescence Download PDFInfo
- Publication number
- CN103824911A CN103824911A CN201410090603.5A CN201410090603A CN103824911A CN 103824911 A CN103824911 A CN 103824911A CN 201410090603 A CN201410090603 A CN 201410090603A CN 103824911 A CN103824911 A CN 103824911A
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- China
- Prior art keywords
- transformer
- laser generator
- epitaxial wafer
- data
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 14
- 238000005424 photoluminescence Methods 0.000 title abstract description 3
- 238000004020 luminiscence type Methods 0.000 claims description 10
- 238000013480 data collection Methods 0.000 claims description 9
- 238000012546 transfer Methods 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/58—Photometry, e.g. photographic exposure meter using luminescence generated by light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a device for testing light intensity and wavelength through photoluminescence. The device comprises a regulator, a display device, a transformer and a laser generator, wherein the display device and the transformer are connected with a mains supply through the regulator; the display device is connected to a data acquisition channel through a data conversion device; the data acquisition channel is arranged on a grown epitaxial wafer; one side of the grown epitaxial wafer is provided with a laser generator connected to the transformer; laser emitted by the laser generator directly irradiates the surface of the grown epitaxial wafer, then, electrons and holes are combined to emit light under the action of energy, and data acquired from the data acquisition channel by means of the data conversion device are quantified into concrete data. The device is simple in structure, relatively low in price and short in test period, products are effectively prevented from being lowered in quality and from being scrapped, and the powerful technical support is provided for grade improvement.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, be specially the device of a kind of luminescence generated by light test luminous intensity and wavelength.
Background technology
LED is English Light Emitting Diode(light-emitting diode) abbreviation, the wafer that its core is made up of p-type semiconductor and N-shaped semiconductor has a transition zone between p-type semiconductor and N-shaped semiconductor, is called p-n junction.In the PN junction of some semi-conducting material, the minority carrier of injection and majority carrier compound tense can discharge unnecessary energy with the form of light, thereby electric energy is directly converted to luminous energy.
Existing epitaxial wafer time test period is longer, generally needs about five days, like this technical staff's technique adjustment difficulty is increased greatly, because extension processing procedure after growth completes only needs 6-9 hour, can complete many processing procedures in the time of five days; Time is oversize, causes some technological parameter to adjust in time, especially to the important parameter such as brightness, photoluminescence wavelength.
Summary of the invention
Technical problem solved by the invention is to provide the device of a kind of luminescence generated by light test luminous intensity and wavelength, to solve the problem in above-mentioned background technology.
Technical problem solved by the invention realizes by the following technical solutions: the device of a kind of luminescence generated by light test luminous intensity and wavelength, comprise: source of stable pressure, display unit, transformer, laser generator, described display unit, transformer is connected in civil power by source of stable pressure, display unit is connected in data collection channel by DTU (Data Transfer unit), data collection channel is arranged on the epitaxial wafer of having grown, epitaxial wafer one side of having grown is provided with laser generator, laser generator is connected on transformer, utilize laser generator to get laser straight and be mapped to the epitaxial wafer surface of having grown, then under the effect of energy, electronics and hole-recombination are luminous, utilize DTU (Data Transfer unit) that the data volume of collecting in data collection channel is changed into concrete data.
Described display unit is liquid crystal display.
Described source of stable pressure is 220V pressurizer.
Compared with public technology, there is following advantage in the present invention: the present invention is by the wavelength to the luminescence generated by light showing in liquid crystal display and luminous intensity, technologists is made technological parameter adjustment in time, simple in structure, price of spare parts is lower, test period is short, thereby effectively avoid the decline of product quality and scrap, for grade provides strong technical support.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
In order to make technological means of the present invention, creation characteristic, workflow, using method reach object and effect is easy to understand, below in conjunction with the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, the device of a kind of luminescence generated by light test luminous intensity and wavelength, comprise: source of stable pressure, display unit, transformer, laser generator, described display unit, transformer is connected in civil power by source of stable pressure, display unit is connected in data collection channel by DTU (Data Transfer unit), data collection channel is arranged on the epitaxial wafer of having grown, epitaxial wafer one side of having grown is provided with laser generator, laser generator is connected on transformer, utilize laser generator to get laser straight and be mapped to the epitaxial wafer surface of having grown, then under the effect of energy, electronics and hole-recombination are luminous, utilize DTU (Data Transfer unit) that the data volume of collecting in data collection channel is changed into concrete data.
Particularly, described display unit is liquid crystal display.
Particularly, described source of stable pressure is 220V pressurizer.
Operation principle of the present invention is: after the civil power (220V) that power supplier (constant-current source) access electrical network is provided, stable power supply piezoelectric voltage is provided, then by potential device (high-tension transformer), voltage is risen between 3200V-4000V, then by voltage-drop loading above laser, then laser is got to high energy laser above the epitaxial wafer of having grown through technology contact by designated lane again, so just can the electronics of the epitaxial wafer of having grown and hole be activated superlaser, under the exciting of energy, there is energy level transition, thereby at middle quantum well area recombination luminescence, the wavelength and the luminous intensity that finally by DTU (Data Transfer unit), we are needed present by display unit.The features such as this apparatus structure is simple, and price of spare parts is lower, test period is short, and practicality is quite strong.
More than show and described basic principle of the present invention, principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (3)
1. the device of luminescence generated by light test luminous intensity and wavelength, comprise: source of stable pressure, display unit, transformer, laser generator, it is characterized in that: described display unit, transformer is connected in civil power by source of stable pressure, display unit is connected in data collection channel by DTU (Data Transfer unit), data collection channel is arranged on the epitaxial wafer of having grown, epitaxial wafer one side of having grown is provided with laser generator, laser generator is connected on transformer, utilize laser generator to get laser straight and be mapped to the epitaxial wafer surface of having grown, then under the effect of energy, electronics and hole-recombination are luminous, utilize DTU (Data Transfer unit) that the data volume of collecting in data collection channel is changed into concrete data.
2. the device of a kind of luminescence generated by light test luminous intensity according to claim 1 and wavelength, is characterized in that: described display unit is liquid crystal display.
3. the device of a kind of luminescence generated by light test luminous intensity according to claim 1 and wavelength, is characterized in that: described source of stable pressure is 220V pressurizer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410090603.5A CN103824911A (en) | 2014-03-12 | 2014-03-12 | Device for testing light intensity and wavelength through photoluminescence |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410090603.5A CN103824911A (en) | 2014-03-12 | 2014-03-12 | Device for testing light intensity and wavelength through photoluminescence |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103824911A true CN103824911A (en) | 2014-05-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410090603.5A Pending CN103824911A (en) | 2014-03-12 | 2014-03-12 | Device for testing light intensity and wavelength through photoluminescence |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103824911A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020021141A1 (en) * | 2000-07-25 | 2002-02-21 | Udo Hartmann | Apparatus for testing semiconductor devices |
| CN1344020A (en) * | 2000-09-08 | 2002-04-10 | 三菱硅材料株式会社 | Method and appts. for verifying quality of semiconductor substrate |
| CN1556390A (en) * | 2003-12-30 | 2004-12-22 | 中国科学院上海微***与信息技术研究 | Method for semiconductor material specific property characterization and its system |
| CN102087226A (en) * | 2009-12-04 | 2011-06-08 | 三星Led株式会社 | LED testing device and method |
-
2014
- 2014-03-12 CN CN201410090603.5A patent/CN103824911A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020021141A1 (en) * | 2000-07-25 | 2002-02-21 | Udo Hartmann | Apparatus for testing semiconductor devices |
| CN1344020A (en) * | 2000-09-08 | 2002-04-10 | 三菱硅材料株式会社 | Method and appts. for verifying quality of semiconductor substrate |
| CN1556390A (en) * | 2003-12-30 | 2004-12-22 | 中国科学院上海微***与信息技术研究 | Method for semiconductor material specific property characterization and its system |
| CN102087226A (en) * | 2009-12-04 | 2011-06-08 | 三星Led株式会社 | LED testing device and method |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140528 |
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| RJ01 | Rejection of invention patent application after publication |