CN103820767A - Pretreatment technology for improving quality of polycrystalline silicon film - Google Patents
Pretreatment technology for improving quality of polycrystalline silicon film Download PDFInfo
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- CN103820767A CN103820767A CN201310736927.7A CN201310736927A CN103820767A CN 103820767 A CN103820767 A CN 103820767A CN 201310736927 A CN201310736927 A CN 201310736927A CN 103820767 A CN103820767 A CN 103820767A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 49
- 238000005516 engineering process Methods 0.000 title claims abstract description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 38
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 32
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000001257 hydrogen Substances 0.000 claims abstract description 30
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 27
- 238000000137 annealing Methods 0.000 claims abstract description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000002425 crystallisation Methods 0.000 claims abstract description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 230000008025 crystallization Effects 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 230000006698 induction Effects 0.000 claims abstract description 3
- 239000012528 membrane Substances 0.000 claims description 47
- 229920005591 polysilicon Polymers 0.000 claims description 42
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000004411 aluminium Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000013459 approach Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000006356 dehydrogenation reaction Methods 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000002243 precursor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 230000008021 deposition Effects 0.000 description 7
- 238000002203 pretreatment Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
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Abstract
The invention relates to a pretreatment technology for improving the quality of a polycrystalline silicon film. The pretreatment technology is characterized in that the content of hydrogen in noncrystalline silicon is controlled effectively by controlling the annealing temperature and the annealing time before aluminum-induced crystallization (AIC), and the noncrystalline silicon film is annealed in nitrogen or argon shield gas. The annealing temperature is 350-500 DEG C and the annealing time is 0.1-5h. After the noncrystalline silicon film is subjected to annealing treatment at different temperature, the content of hydrogen in the film is reduced to 1.4% from 10%, so that the polycrystalline silicon film prepared via aluminum induction is dry, smooth and complete in surface. According to the pretreatment technology, the high-quality polycrystalline silicon film can be prepared at lower temperature and in shorter time. Compared with the traditional AIC polycrystalline silicon preparation method, an annealing and dehydrogenation step is added before the AIC, so that the content of hydrogen in a precursor a-Si:H can be controlled effectively, and the polycrystalline silicon film with larger grain size, smaller stress and smoother and more complete surface can be prepared.
Description
Technical field
The present invention relates to a kind of method of preparing polysilicon membrane, relate to or rather and a kind ofly improve the quality of polysilicon membrane by utilizing the pre-treating technology of aluminum-induced crystallized non-crystalline silicon, belong to the preparation field of polysilicon membrane.
Background technology
Polysilicon (Poly-Si) film has higher carrier mobility, absorptivity and stable photoelectric properties, thereby is widely used in solar cell, thin film transistor, liquid-crystal display and image sensor etc.The method of preparing at present polysilicon membrane mainly contains chemical Vapor deposition process, solid-phase crystallization method, laser crystallization method and metal-induced crystallization method.
Wherein, 1. chemical Vapor deposition process need to could obtain polysilicon membrane at higher temperature, and the polysilicon grain obtaining is small-sized, only has nm level; Representative bibliographical information have " Liu Fengzhen, Zhu Meifang, Feng Yong etc. semi-conductor journal, 23 (5) (2003) 499-503. "
Although 2. solid-phase crystallization method technique is simple, required time is long, generally needs tens hours, and thermal treatment temp is up to 600 ℃, larger to the selectional restriction of baseplate material; Representative bibliographical information has " F.Law, B.Hoex, J.Wang, J.Luther, K.Sharma, M.Creatore, Thin Solid Films, 520 (2012), pp.5820-5825 "
3. laser crystallization method speed is fast, but equipment complexity, cost is higher; Representative bibliographical information has " C.T.Angelis, C.A.Dimitriadis, F.V.Farmakis, et al., Solid-State Elec., 44 (6) (2000) 1081-1087. "
4. metal-induced crystallization method, the metal for Ni, Cu, Pt etc. for metal-induced crystallization amorphous silicon membrane, is easy to produce deep energy level in Si, forms deathnium, and the electrical property of polycrystalline silicon thin film solar cell is prepared in impact; And these metals are easy to form silicide with Si, are unfavorable for carrying out smoothly of revulsive crystallization.And Al has the element of three electronics as a skin, it in Si, is a comparatively ideal doping agent.The Al layer being clipped between substrate and polysilicon membrane after displacement can also use as electrode.Representative report has " R.Kishore, C.Hotz, H.A.Naseem, et al., Elec.Solid-State Lett., 4 (2) (2001) G14-G16. " etc.
So the application attempts by aluminum-induced crystallized non-crystalline silicon pre-treating technology, to improve the polysilicon membrane quality of preparation, thereby be guided out design of the present invention.
Summary of the invention
The object of the present invention is to provide a kind of pre-treating technology that improves polysilicon membrane quality, it is characterized in that before aluminum-induced crystallized, amorphous silicon membrane is carried out to pre-treatment, to improve the quality of polysilicon membrane of preparation.
Prepare in polysilicon membrane process at aluminum-induced crystallized (AIC) amorphous silicon membrane, if the hydrogen richness in presoma a-Si:H is too high, easily make to obtain polysilicon surface generation a lot of because bubble overflows the breakage producing, and the roughness of film is very large.The underlayer temperature that directly changes PECVD deposition of amorphous silicon regulates the hydrogen richness in non-crystalline silicon, finds that this method regulating power is limited, and it is little that hydrogen richness reduces amplitude.By to non-crystalline silicon annealing research find, reasonably control dehydrogenation temperature and time and can effectively change the hydrogen richness in non-crystalline silicon, thereby be conducive to prepare the smooth amorphous silicon membrane of surfacing.
Hydrogen richness in amorphous silicon membrane can promote the mutual diffusion speed of Si and Al too much, and the internal stress of the polysilicon membrane having increased access to reduces grain-size.Non-crystalline silicon presoma is carried out after dehydrogenation, and the mutual diffusion speed of Si and Al is slack-off, is conducive to form the high quality polysilicon membrane that internal stress is less, grain-size is larger.
Regulate the underlayer temperature in PECVD when deposition to regulate the limited in one's ability of hydrogen richness in a-Si:H, research shows, in the time that depositing temperature is 250 ℃, the hydrogen richness in non-crystalline silicon is still up to 10% left and right.Hydrogen in non-crystalline silicon can be accelerated the mutual diffusion speed of Si and Al in AIC process, makes Si nucleation site become many, finally obtains polysilicon grain size decreases, and it is large that stress becomes.The polysilicon membrane being prepared by AIC by the non-crystalline silicon of this high hydrogen richness is discontinuous, and surface has a lot of bubbles.The present invention, by a-Si:H is carried out to anneal, regulates the hydrogen richness in non-crystalline silicon by annealing dehydrogenation, finally can regulate the mutual diffusion speed of Si and Al, thereby it is larger to prepare grain-size, the polysilicon membrane that stress is less.Can effectively regulate the hydrogen richness in a-Si:H, thereby be conducive to obtain the smooth polysilicon membrane of smooth surface.
According to above-mentioned cognition, processing step of the present invention is summarized as: first first deposition of amorphous silicon films on substrate, then at upper deposition one deck Al of amorphous silicon membrane, form the structure of substrate/non-crystalline silicon/aluminium; Then under the eutectic temperature (577 ℃) of Si/Al, carry out anneal (minimum can arrive 350 ℃), make it to be exchanged into the structure of substrate/aluminium/polysilicon.The parameter that affects AIC process mainly contains character of annealing temperature, annealing time, Si/Al Thickness Ratio, interface oxide layer, a-Si and Al etc.The character of presoma amorphous silicon material has very important impact for the polysilicon membrane obtaining.Hydrogen in non-crystalline silicon is the parameter very important to AIC process, and the Hydrogen Energy of high density is accelerated the process of AIC.But there is a lot of bubbles, film non-continuous event by the polysilicon membrane surface that causes preparing after crystallization in the hydrogen richness of non-crystalline silicon middle and high concentration.
In sum, a kind of pre-treating technology that improves polysilicon membrane quality provided by the invention, eigenwert for fear of:
1), before aluminum-induced crystallized, by controlling annealing temperature and annealing time, effectively control the hydrogen richness in non-crystalline silicon; In nitrogen or argon shield gas, amorphous silicon membrane is annealed.
2) annealing temperature is 350-500 ℃, and annealing time is 0.1-5h.
3) under differing temps, amorphous silicon membrane is carried out after anneal, the hydrogen richness of film is reduced to 1.4% from 10%, thereby makes to induce the polysilicon membrane surface dry of preparation sliding complete by aluminium.
As can be seen here, the present invention can prepare at lesser temps with in the short period high-quality polysilicon membrane.Prepare the method for polysilicon than traditional AIC, the present invention had added an annealing dehydrogenation step before AIC, can effectively control the hydrogen richness in presoma a-Si:H, was conducive to the larger grain-size of preparation, stress is less, the more level and smooth complete polysilicon membrane in surface.
Accompanying drawing explanation
Fig. 1 is AIC Method And Principle figure provided by the invention;
Fig. 2 is flow process (left side) and the Detection of content (right side) of AIC method provided by the invention;
Fig. 3 is hydrogen richness variation after non-crystalline silicon pre-treatment under differing temps;
The Raman of the polysilicon membrane that Fig. 4 obtains for the sample of 480 ℃ of dehydrogenations and not dehydrogenation characterizes;
The surface topography of the polysilicon membrane that Fig. 5 obtains for the sample of 480 ℃ of not dehydrogenations (a) and dehydrogenation (b).
Embodiment
Below in conjunction with accompanying drawing, by the introduction of specific embodiment, further to illustrate substantive distinguishing features of the present invention and significant progressive, but the present invention only limits to by no means described embodiment.
AIC Method And Principle figure described in embodiment 1 the present invention as shown in Figure 1
On substrate, utilize the method for PECVD first to deposit one deck non-crystalline silicon (a-Si).Substrate can be the one at the bottom of glass substrate, ceramic substrate, stainless steel lining etc.The thickness of α-Si:H is between 1nm-1 μ m.On non-crystalline silicon, use vacuum coating method evaporation one deck aluminium (Al), the thickness of aluminium is also between 1nm-1 μ m again, and the Thickness Ratio of α-Si:H and Al is about 1:1, if can not guarantee, the thickness of α-Si:H should be greater than the thickness of Al.Form after substrate/non-crystalline silicon/constructed of aluminium at 577 ℃ of eutectic temperatures that are less than Si and Al (can be low to 350 ℃ of left and right), carry out anneal, form the structure of substrate/aluminium/polysilicon, thereby prepare polysilicon Seed Layer.
Utilize method provided by the invention to prepare polysilicon membrane
Concrete steps are (consulting Fig. 2):
1, substrate clean: before deposition of amorphous silicon films, need to clean substrate, to obtain clean surface, improve amorphous silicon membrane quality and in suprabasil tack.Cleaning can adopt general RCA cleaning way; Or auxiliary with the organic and inorganic scavenging solution cleaning of being correlated with, ultrasonic cleaning etc.
2, the deposition of amorphous silicon membrane: can adopt the mode of PECVD or sputter etc. to deposit the hydrogeneous non-crystalline silicon of a-Si:H() film, the depositing temperature (25-300C) of film, time (1-100min), thickness (1-1000nm).
3, non-crystalline silicon pre-treatment: in the shielding gas such as nitrogen, argon gas, amorphous silicon membrane is annealed, annealing temperature is 350-500 ℃, the annealing 0.1-5h time.By controlling annealing temperature and time, can effectively control the hydrogen richness in a-Si:H.
As a comparison sample: portion of amorphous silicon film is without pre-treatment, and contrast through pretreated sample, all use FTIR(Fourier transform infrared spectroscopy) test its hydrogen richness, can be FZ silicon chip (floating region silicon) for testing the sample substrate of hydrogen richness.
5, the deposition of induction metal: utilize vacuum coating film equipment respectively in pre-treatment with without the Al that deposits 1nm-1000nm on pretreated sample, the thickness proportion optimum value of a-Si:H and Al is 1:1, and as do not met, the thickness of a-Si:H should be greater than the thickness of Al.
6, AIC annealing: under the atmosphere protection such as nitrogen or argon gas, anneal, annealing temperature is 350-550 ℃, and annealing time is 0.1-8h.To the polysilicon membrane sign of utilizing Raman (Raman) to carry out crystallization of preparation, utilize SEM(scanning electronic microscope) carry out the sign of surface topography.
FTIR studies discovery, under differing temps, amorphous silicon membrane is carried out after pre-treatment, and hydrogen richness has significant variation, is reduced to 1.4% left and right (Fig. 3) from initial approximately 10%.
α-Si:H is after 480 ℃ of annealing 1h, and polysilicon membrane prepared by AIC has obvious impact, is mainly manifested in polysilicon peak position and more approaches crystalline silicon 520.7cm
-1position, it is narrower that peak width at half height becomes.Main result as shown in Figure 4.Dependent Red Shift more approaches 520.7cm
-1indicate reducing of polysilicon in-draw stress, it is narrower that peak width at half height becomes, and shows that obtained grain-size is larger, and degree of crystallization is higher.
SEM studies discovery, and along with the minimizing of hydrogen richness in a-Si:H, the polysilicon surface prepared by AIC method is more smoothly complete.As shown in Figure 5, a, b figure is respectively the low prepared polysilicon sample of a-Si:H of hydrogen content after a-Si:H that not dehydrogenation hydrogen content is high and dehydrogenation.
Claims (6)
1. improve a pre-treating technology for polysilicon membrane quality, it is characterized in that before aluminum-induced crystallized, by controlling annealing temperature and annealing time, effectively control the hydrogen richness in non-crystalline silicon; In nitrogen or argon shield gas, amorphous silicon membrane is annealed.
2. by pre-treating technology claimed in claim 1, it is characterized in that annealing temperature is 350-500 ℃, annealing time is 0.1-5h.
3. by the pre-treating technology described in claim 1 or 2, it is characterized in that under differing temps, amorphous silicon membrane being carried out after anneal, the hydrogen richness of film is reduced to 1.4% from 10%, thereby makes induce the polysilicon membrane surface dry cunning of preparation complete by aluminium.
4. by pre-treating technology claimed in claim 2, it is characterized in that non-crystalline silicon is at 480 ℃, after annealing 1h, approach crystalline silicon 520.7cm by many peak positions through film of aluminium induction preparation
-1position, it is narrower that peak width at half height becomes, degree of crystallization is higher.
5. by pre-treating technology claimed in claim 1, it is characterized in that described amorphous silicon membrane is the preparation that adopts PECVD or sputtering method, depositing temperature 25-300 ℃, depositing time is 1-100min, deposit thickness is 1-1000nm.
6. starve pre-treating technology by 1 or 3 possessions of claim, it is characterized in that the thickness of described amorphous silicon membrane is between 1nm-1 μ m; On amorphous silicon membrane, with the method evaporation layer of metal aluminium of vacuum plating, aluminium thickness is between 1nm-1 μ m, and the ratio of the thickness of amorphous silicon membrane and the thickness of Al is after 1:1 or the former are greater than.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104975260A (en) * | 2015-08-05 | 2015-10-14 | 大连大学 | Preparation method of polycrystalline silicon film with high crystallization rate |
| CN110165017A (en) * | 2019-04-18 | 2019-08-23 | 中国科学院宁波材料技术与工程研究所 | Prepare the quick annealing method of tunnelling oxygen passivation contact structures |
| CN110265487A (en) * | 2015-03-23 | 2019-09-20 | 太阳能公司 | The polysilicon of bubble-free for solar battery |
| CN110767774A (en) * | 2019-10-14 | 2020-02-07 | 上海理想万里晖薄膜设备有限公司 | Method for manufacturing TOPCon solar cell and method and equipment for crystallizing amorphous silicon of TOPCon solar cell |
| CN113451122A (en) * | 2020-03-27 | 2021-09-28 | 江苏鲁汶仪器有限公司 | Method for depositing high-adhesion film on III-V substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265487A (en) * | 2015-03-23 | 2019-09-20 | 太阳能公司 | The polysilicon of bubble-free for solar battery |
| CN110265487B (en) * | 2015-03-23 | 2022-07-26 | 太阳能公司 | Bubble-free polycrystalline silicon for solar cells |
| CN104975260A (en) * | 2015-08-05 | 2015-10-14 | 大连大学 | Preparation method of polycrystalline silicon film with high crystallization rate |
| CN104975260B (en) * | 2015-08-05 | 2018-05-01 | 大连大学 | A kind of preparation method of high crystallization rate polysilicon membrane |
| CN110165017A (en) * | 2019-04-18 | 2019-08-23 | 中国科学院宁波材料技术与工程研究所 | Prepare the quick annealing method of tunnelling oxygen passivation contact structures |
| CN110165017B (en) * | 2019-04-18 | 2021-08-24 | 中国科学院宁波材料技术与工程研究所 | Rapid annealing method for preparing tunneling oxygen passivation contact structure |
| CN110767774A (en) * | 2019-10-14 | 2020-02-07 | 上海理想万里晖薄膜设备有限公司 | Method for manufacturing TOPCon solar cell and method and equipment for crystallizing amorphous silicon of TOPCon solar cell |
| CN113451122A (en) * | 2020-03-27 | 2021-09-28 | 江苏鲁汶仪器有限公司 | Method for depositing high-adhesion film on III-V substrate |
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