CN103811566A - Solar cell with front point contact structure and novel front electrode - Google Patents
Solar cell with front point contact structure and novel front electrode Download PDFInfo
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- CN103811566A CN103811566A CN201410059344.XA CN201410059344A CN103811566A CN 103811566 A CN103811566 A CN 103811566A CN 201410059344 A CN201410059344 A CN 201410059344A CN 103811566 A CN103811566 A CN 103811566A
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- 230000005540 biological transmission Effects 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a solar cell with a front point contact structure and a novel front electrode and relates to the field of solar cell production, in particular to a solar cell with a novel structure and a novel solar cell front electrode. The novel front electrode of the solar cell with the front point contact structure is formed by at least one main grid and a plurality of thin grids which are perpendicular to each other, wherein each thin grid consists of a plurality of dot-shaped contact electrodes and one transmission electrode, the transmission electrode is a metal lead wire and penetrates the contact electrodes to be connected with the contact electrodes. One the one hand, the conversion efficiency of the solar cell can be improved, and on the other hand, the manufacture cost of the solar cell can be also saved.
Description
Technical field
The present invention relates to solar cell production field, be specifically related to a kind of solar cell and a kind of novel solar cell front electrode of new construction.
Background technology
The front electrode of traditional crystal-silicon solar cell forms by some main grids and some thin grid are mutually vertical, the thin grid of this front electrode rectangular configuration that is as the criterion, affect on the one hand effective illuminating area of solar cell, and metal-semiconductor contact region is larger, the conversion efficiency of restriction solar cell, silver slurry use amount is larger on the other hand, the manufacturing cost of restriction solar cell.
Summary of the invention
The invention provides solar cell and the novel front electrode of a kind of front point-contact junction structure, the thin grid structure of its novel front electrode is made up of contact electrode and a transmission electrode of several point-like, can improve on the one hand the conversion efficiency of solar cell, also can reduce on the other hand the manufacturing cost of solar cell.
The novel solar cell front electrode of a kind of front point-contact junction structure, by at least one main grid and some thin grid vertical forming mutually, every thin grid form by contact electrode and a transmission electrode of several point-like, transmission electrode is plain conductor, and it passes each contact electrode and is attached thereto.
Preferably, the preparation method of contact electrode is: first with utilizing typography that metal conductive paste is printed on to solar battery surface according to certain overall dimension and arrangement mode, then make metal conductive paste and solar battery surface form alloy by high-sintering process, form good contact, thereby form contact electrode.
More preferably, the area of described each contact electrode is at 0.0025 square millimeter to 0.03 square millimeter.
Or preferably, the manufacture method of transmission electrode is: the plain conductor as transmission electrode is connected with contact electrode by low-temperature conductive slurry, and after the heat treatment of <300 ℃, transmission electrode and contact electrode form good contact.
Or more preferably, the diameter of plain conductor is 20-100 micron.
A solar cell for front point-contact junction structure, its front electrode is the novel solar cell front electrode of above-mentioned a kind of front point-contact junction structure.
Solar cell and the novel front electrode of a kind of front of the present invention point-contact junction structure, its thin grid are by contact electrode and a transmission electrode composition of several point-like, wherein, contact electrode is point-like, just form and contact in part with battery surface, reduce on the one hand the use amount of metal conductive paste, save the manufacturing cost of solar cell, cause on the other hand the complex centre of metal-semiconductor contact interface state to be reduced, thereby improve the conversion efficiency of battery.Transmission electrode is plain conductor, because the wire diameter of plain conductor can reach 20 microns and cross section for circular, the sunlight being radiated on solar cell approximately has 30% can get back to battery surface by the secondary reflection of wire, there is better internal reflection effect, realize less shading loss, thereby improve the conversion efficiency of solar cell.
Accompanying drawing explanation
Fig. 1 is the structural representation of novel front electrode of the present invention.
Fig. 2 is the structural representation of the thin grid structure of the novel front electrode of solar cell.
Fig. 3 is the structural representation that dwindles the thin grid structure of front electrode after the volume of contact electrode.
Fig. 4 is the structural representation of solar cell.
Wherein 1-contact electrode, in 2-transmission electrode, 3-main grid, 4-solar cell front electrode, 5-p type substrate, 6-n type layer, 7-passivated reflection reducing is penetrated layer, 8-back electrode.
Embodiment
Embodiment mono-:
The novel solar cell front electrode 4 of a kind of front point-contact junction structure, by at least one main grid 3 and some thin grid vertical forming mutually, every thin grid form by contact electrode 1 and a transmission electrode 2 of several point-like, wherein the preparation method of contact electrode 1 is: first utilize typography that metal conductive paste is printed on to solar battery surface according to certain overall dimension and arrangement mode, then make metal conductive paste and solar battery surface form alloy by high-sintering process, form good contact, thereby form contact electrode 1, and the area of each contact electrode 1 is between 0.0025 square millimeter to 0.03 square millimeter.In the present embodiment, metal conductive paste used is front conductive silver paste.Transfer wire 2 for wire diameter be the plain conductor of 20-100 micron, plain conductor is connected with contact electrode 1 by low-temperature conductive slurry, after the heat treatment of <300 ℃, form good contact with contact electrode 1, realize the photogenerated current that contact electrode 1 is collected and collect and derive, low-temperature conductive slurry described in the present embodiment is tin slurry.Printing process described in the present embodiment can adopt the technology such as silk screen printing or ink jet printing or evaporation sputter.
Embodiment bis-:
The novel solar cell front electrode 4 of a kind of front point-contact junction structure, by at least one main grid 3 and some thin grid vertical forming mutually, every thin grid form by contact electrode 1 and a transmission electrode 2 of several point-like, change the size of contact electrode 1, the solar cell front electrode 4 of capacity gauge in order to ensure to(for) sunlight, the number of the corresponding change contact electrode 1 of need, as shown in Figure 3, dwindle the volume of contact electrode, need to increase the number of contact electrode.
Embodiment tri-:
The solar cell of a kind of front point-contact junction structure, comprise p-type substrate 5, on p-type substrate through diffuseing to form a N-shaped layer 6, on N-shaped layer 6, deposit one deck passivated reflection reducing is penetrated layer 7, it is the novel front electrode 4 of the solar cell of a kind of front point-contact junction structure described in above-described embodiment one that passivated reflection reducing is penetrated on layer 7, and p-type substrate bottom is back electrode 8.
Reference is as following table one, table two, table one is traditional solar cell parameter, the detected parameters of the solar cell of a kind of front point-contact junction structure that table two designs for the present invention, under contrast, in the present invention, the solar batteries of a kind of front point-contact junction structure improves 0.5% relatively, short circuit current improves 1-1.5% relatively, and the conversion efficiency loudness raising of solar cell is greater than 1.5%, as shown in following table two:
Table one:
Sample number into spectrum | Open circuit voltage | Short circuit current | Fill factor, curve factor | Series resistance | Parallel resistance | Conversion efficiency |
1 | 0.617131 | 8.51393 | 0.776147 | 0.006747 | 28.25383 | 0.167717 |
2 | 0.61665 | 8.537251 | 0.784736 | 0.006144 | 29.30007 | 0.169905 |
3 | 0.615442 | 8.531889 | 0.782278 | 0.006044 | 52.45974 | 0.168935 |
4 | 0.622385 | 8.574598 | 0.780682 | 0.006175 | 34.91358 | 0.171345 |
5 | 0.61767 | 8.49921 | 0.784175 | 0.006159 | 48.91148 | 0.169307 |
Mean value | 0.617856 | 8.53137 | 0.781604 | 0.006254 | 38.76774 | 0.169442 |
Table two:
Sample number into spectrum | Open circuit voltage | Short circuit current | Fill factor, curve factor | Series resistance | Parallel resistance | Conversion efficiency |
1 | 0.619846 | 8.55908 | 0.77524 | 0.006252 | 45.81997 | 0.16915 |
2 | 0.620161 | 8.664358 | 0.785018 | 0.005989 | 83.84088 | 0.173479 |
3 | 0.619951 | 8.665588 | 0.788332 | 0.0055 | 321.5706 | 0.174177 |
4 | 0.62013 | 8.676281 | 0.784316 | 0.005908 | 43.79081 | 0.173554 |
5 | 0.620079 | 8.626901 | 0.784009 | 0.005984 | 227.4989 | 0.172484 |
Mean value | 0.620033 | 8.638442 | 0.783383 | 0.005927 | 144.5042 | 0.172569 |
Claims (4)
1. the novel solar cell front electrode (4) of a front point-contact junction structure, by at least one main grid (3) and some thin grid vertical forming mutually, it is characterized in that: every thin grid form by contact electrode (1) and a transmission electrode (2) of several point-like, transmission electrode (2) is plain conductor, and it passes each contact electrode (2) and is attached thereto.
2. as the novel solar cell front electrode (4) of a claim 1 front point-contact junction structure, it is characterized in that: the area of described each contact electrode (1) is 0.0025 square millimeter to 0.03 square millimeter.
3. as the novel solar cell front electrode (4) of a claim 1 front point-contact junction structure, it is characterized in that: the diameter of described plain conductor is 20-100 micron.
4. a solar cell for front point-contact junction structure, is characterized in that: its front electrode (4) is the novel solar cell front electrode (4) of a kind of front point-contact junction structure described in claim 1 or 2 or 3.
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104183657A (en) * | 2014-09-03 | 2014-12-03 | 常州天合光能有限公司 | Crystalline silicon solar cell alternate metal front electrode and preparation method thereof |
CN104600134A (en) * | 2014-12-30 | 2015-05-06 | 南京日托光伏科技有限公司 | Solar cell and preparation method thereof |
CN105762202A (en) * | 2016-04-28 | 2016-07-13 | 泰州乐叶光伏科技有限公司 | Solar cell front electrode with combination of points and lines and preparation method |
CN107994101A (en) * | 2017-12-15 | 2018-05-04 | 南通苏民新能源科技有限公司 | A kind of crystal silicon solar cell sheet metal electrode production method |
CN112736146A (en) * | 2020-12-31 | 2021-04-30 | 湖南红太阳新能源科技有限公司 | PERC battery based on point contact and composite film layer |
CN117712197A (en) * | 2024-01-31 | 2024-03-15 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101562217A (en) * | 2009-05-22 | 2009-10-21 | 中国科学院电工研究所 | Method for preparing front electrodes of solar cells |
CN102683478A (en) * | 2011-03-18 | 2012-09-19 | 陕西众森电能科技有限公司 | Electrode structure on back of solar cell and manufacturing method thereof |
CN102683477A (en) * | 2011-03-18 | 2012-09-19 | 陕西众森电能科技有限公司 | Solar cell selective emission electrode structure and manufacturing method thereof |
-
2014
- 2014-02-21 CN CN201410059344.XA patent/CN103811566A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101562217A (en) * | 2009-05-22 | 2009-10-21 | 中国科学院电工研究所 | Method for preparing front electrodes of solar cells |
CN102683478A (en) * | 2011-03-18 | 2012-09-19 | 陕西众森电能科技有限公司 | Electrode structure on back of solar cell and manufacturing method thereof |
CN102683477A (en) * | 2011-03-18 | 2012-09-19 | 陕西众森电能科技有限公司 | Solar cell selective emission electrode structure and manufacturing method thereof |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104183657A (en) * | 2014-09-03 | 2014-12-03 | 常州天合光能有限公司 | Crystalline silicon solar cell alternate metal front electrode and preparation method thereof |
CN104600134A (en) * | 2014-12-30 | 2015-05-06 | 南京日托光伏科技有限公司 | Solar cell and preparation method thereof |
CN105762202A (en) * | 2016-04-28 | 2016-07-13 | 泰州乐叶光伏科技有限公司 | Solar cell front electrode with combination of points and lines and preparation method |
CN107994101A (en) * | 2017-12-15 | 2018-05-04 | 南通苏民新能源科技有限公司 | A kind of crystal silicon solar cell sheet metal electrode production method |
CN112736146A (en) * | 2020-12-31 | 2021-04-30 | 湖南红太阳新能源科技有限公司 | PERC battery based on point contact and composite film layer |
CN117712197A (en) * | 2024-01-31 | 2024-03-15 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
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