CN103811247B - For plasma etching focusing ring and there is its plasma etching apparatus - Google Patents
For plasma etching focusing ring and there is its plasma etching apparatus Download PDFInfo
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- CN103811247B CN103811247B CN201410053269.6A CN201410053269A CN103811247B CN 103811247 B CN103811247 B CN 103811247B CN 201410053269 A CN201410053269 A CN 201410053269A CN 103811247 B CN103811247 B CN 103811247B
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Abstract
The invention provides a kind of focusing ring for plasma etching, comprise the lower ring of insulating material, the middle ring of conductor material and pressed on ring.The present invention also provides a kind of plasma etching apparatus comprising this focusing ring, wherein, to the loading predeterminated voltage of focusing ring, this predeterminated voltage is for different plasma modellings, obtains the near maximum value of the average voltage in etching cavity in the rf period.In plasma etch process, although pressed on ring is corroded gradually, but because middle ring limits the Electric Field Distribution near crystal round fringes, the plasma characteristics impact of pressed on ring height change on crystal round fringes is less, especially less on ion incident angles impact, can ensure that larger change does not occur the perpendicularity of the Etching profile of crystal round fringes.
Description
Technical field
The invention belongs to plasma apparatus field, be specifically related to a kind of focusing ring for plasma etching and there is its plasma etching apparatus.
Background technology
At present, in integrated circuit fabrication process, general using plasma bombardment device etches.Described plasma bombardment device utilizes plasma bombardment principle drive out of by the atom of bombardment material surface thus reach the object of etching, and this device generally comprises the accessories such as slide holder (simultaneously as bottom electrode) and focusing ring.As shown in Figure 1, by the upper surface needing the wafer 2 ' carrying out plasma etching processing to be placed on slide holder 1 ', in order to prevent etching process plasma erosion slide holder 1 ' thus shorten its useful life, slide holder 1 ' small end body diameter is slightly less than the diameter of wafer 2 ' usually, makes wafer 2 ' cover slide holder small end cylinder completely.Around placement focusing ring 3 ' around slide holder 1 ', focusing ring 3 ' inboard portion extends under the back side, wafer 2 ' edge.The effect of introducing focusing ring 3 ' is the electric field strength in order to regulate wafer upper surface space, ensures the etching homogeneity of crystal round fringes region and central area.
But, because focusing ring 3 ' exposes in the plasma, carrying out focusing ring 3 ' and will be corroded gradually along with plasma etching.Because focusing ring 3 ' is in the medium-altitude change of etching process, there is larger change in the Electric Field Distribution at wafer 2 ' edge, ion incident angles is made seriously to be inclined to vertical direction, as shown in Figure 2, thus cause plasma etching section generation shift phenomenon, finally cause the yields in crystal round fringes region greatly to reduce.
Summary of the invention
The present invention is intended to solve at least to a certain extent in above-mentioned plasma etching wafer process the technical problem being difficult to keep vertical etch.
For this reason, one object of the present invention is to propose a kind of focusing ring for plasma etching.
Another object of the present invention is to propose a kind of plasma etching apparatus with this focusing ring.
The focusing ring for plasma etching according to a first embodiment of the present invention, comprising: lower ring, and described lower ring adopts the insulator of anti-plasma corrosion to make; Middle ring, described middle ring is positioned on described lower ring, adopts conductor to make; Pressed on ring, described pressed on ring is arranged on described ring, adopts semiconductor or insulator to make.
The focusing ring for plasma etching of this embodiment, the middle ring made of conductor material can on-load voltage, can play in plasma etch chamber room and regulate and maintain the effect of Electric Field Distribution, solve the technical problem being difficult to keep vertical etch in plasma etching wafer process.
In addition, following additional technical feature can also be had according to the focusing ring for plasma etching of the embodiment of the present invention:
Alternatively, the material of described lower ring is alundum (Al2O3).
Alternatively, the material of described middle ring is aluminium.
Alternatively, the material of described pressed on ring is silicon, carborundum or quartz.
Plasma etching apparatus according to a first embodiment of the present invention, comprising: slide holder, and described slide holder is used for support wafer to be etched; Above-disclosed focusing ring, described focusing ring is around being arranged on around described slide holder, and described focusing ring does not contact with described wafer, wherein, described middle ring is loaded with predeterminated voltage, and the size of described predeterminated voltage equals the near maximum value of the cycle average voltage in plasma discharge processes.
In the plasma etching apparatus of this embodiment, to ring on-load voltage in focusing ring, can regulate and maintain the effect of Electric Field Distribution, solving the technical problem being difficult to keep vertical etch in plasma etching wafer process.
In addition, following additional technical feature can also be had according to the focusing ring for plasma etching of the embodiment of the present invention:
Alternatively, the interface between the middle ring of described focusing ring and lower ring is higher than the end face of sheaths when carrying out plasma etching.
Alternatively, the thickness of described middle ring is 0.2-0.5mm.
Additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 is the assembling schematic diagram of traditional focusing ring for plasma etching;
Fig. 2 is the schematic diagram that skew occurs crystal column surface ion incident angles;
Fig. 3 is the structural representation of the focusing ring of the embodiment of the present invention;
Fig. 4 is the structural representation of the plasma etching apparatus of the embodiment of the present invention;
Fig. 5 (a) is the crystal round fringes equipotential line distribution map (upper ring thickness is 1.5mm) of the plasma etching apparatus adopting the embodiment of the present invention;
Fig. 5 (b) is the crystal round fringes equipotential line distribution map (upper ring thickness is 0.5mm) of the plasma etching apparatus adopting the embodiment of the present invention;
Fig. 5 (c) is the crystal round fringes ion incident angles distribution map of the plasma etching apparatus adopting the embodiment of the present invention;
Fig. 6 (a) is the crystal round fringes equipotential line distribution map (upper ring thickness is 1.5mm) of the plasma etching apparatus not adopting the embodiment of the present invention;
Fig. 6 (b) is the crystal round fringes equipotential line distribution map (upper ring thickness is 0.5mm) of the plasma etching apparatus not adopting the embodiment of the present invention;
Fig. 6 (c) is the crystal round fringes ion incident angles distribution map of the plasma etching apparatus not adopting the embodiment of the present invention.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not limitation of the present invention be interpreted as.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", orientation or the position relationship of the instruction such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.
In the present invention, unless otherwise clearly defined and limited, the term such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, above-mentioned term concrete meaning in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature " on " or D score can be that the first and second features directly contact, or the first and second features are by intermediary indirect contact.And, fisrt feature second feature " on ", " top " and " above " but fisrt feature directly over second feature or oblique upper, or only represent that fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " below " and " below " can be fisrt feature immediately below second feature or tiltedly below, or only represent that fisrt feature level height is less than second feature.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
The focusing ring for plasma etching according to a first embodiment of the present invention, as shown in Figure 3, can comprise: lower ring 31, middle ring 32 and pressed on ring 31.Wherein, the insulator that lower ring 31 adopts anti-plasma to corrode is made, such as alundum (Al2O3) etc.Middle ring 32 is positioned on lower ring 31, adopts conductor to make, such as aluminium etc.Pressed on ring 33 is arranged on ring 32, adopts semiconductor or insulator to make, such as silicon, carborundum or quartz etc.
The focusing ring for plasma etching of this embodiment, the middle ring made of conductor material can on-load voltage, can play in plasma etch chamber room and regulate and maintain the effect of Electric Field Distribution, solve the technical problem being difficult to keep vertical etch in plasma etching wafer process.
Plasma etching apparatus according to a first embodiment of the present invention, as shown in Figure 4, comprising: slide holder 1 and focusing ring 3.Wherein, slide holder 1 is for support wafer 2 to be etched.Slide holder 1, simultaneously as bottom electrode, is connected to radio frequency source by capacitance C1.In order to prevent slide holder 1 to be corroded, usual slide holder 1 is stepped cylindrical shape, and its small end body diameter is slightly less than the diameter of wafer 2.Focusing ring 3 is around being arranged on around slide holder 1, and focusing ring 3 does not contact with wafer 2.Normally, due to the needs of manufacturing tolerance and thermal expansion, between inside wafer 2 outer rim and focusing ring 3, there is the gap that width is c, general about c=1mm.Alternatively, around slide holder 1, end cylinder and focusing ring 3 surrounding arrange an edge ring 4 greatly.This edge ring 4 is mainly used in shielding the free electric field that slide holder edge produces and the plasma uniformity improved above bottom crown.
Focusing ring 3 can be any one focusing ring above-disclosed.Particularly, this focusing ring 3 is made up of lower ring 31, middle ring 32 and pressed on ring 33.Lower ring 31 extends under the back side, wafer 2 edge, and lower surface is seated on the cascaded surface of slide holder 1.Three rings are placed with one heart, and pressed on ring 33, middle ring 32 are identical with lower ring 31 upper part width, or middle ring 32 is identical with lower ring 31 upper part width, and pressed on ring 33 external diameter is greater than middle ring 32 external diameter, are also ring 32 during pressed on ring 33 covers completely.Middle ring 32 is conductor, and is connected to the anode of DC power supply, and the negative electrode of DC power supply is through electric capacity C2 ground connection.Be connected in DC power supply by middle ring 32, for different plasma discharging model, obtain the near maximum value of the average voltage in the rf period in main plasma district in chamber, the rated voltage of setting DC power supply is the near maximum value of this average voltage.
According to the sheath layer thickness of wafer 2 upper surface in different plasma discharging model, lower ring 31 upper surface h1 is set a little more than wafer 2 upper level, generally take off ring 31 thickness h 1=1 ~ 2mm, middle ring 32 thickness h 2=0.2 ~ 0.5mm, pressed on ring 33 thickness h 3=1.5 ~ 2.5mm.
In the plasma etching apparatus of this embodiment, to ring on-load voltage in focusing ring, can regulate and maintain the effect of Electric Field Distribution, solving the technical problem being difficult to keep vertical etch in plasma etching wafer process.
For making those skilled in the art understand the present invention better, below in conjunction with embodiment, beneficial effect of the present invention is described.
Being in the sheaths above wafer 2, is the important area of impact etching, and the strong electric field existed in it is very large on ion incident angles impact.The material choosing pressed on ring 33 and lower ring 31 is quartz, and middle ring 32 current potential is maintained at 0v, crystal round fringes Electric Field Distribution when h1=1.3mm, h2=0.5mm, Fig. 5 (a) and Fig. 5 (b) are respectively h3=0.5mm and h3=1.5mm.Residing for middle ring 32, aspect ratio sheath layer thickness is slightly large, and the potential lines of wafer 2 fringe region mainly concentrates on below middle ring 32, and only has a small amount of potential lines to exist above middle ring 32.When pressed on ring 33 height change, a small amount of potential lines in only affecting above ring 32, below centering ring 32, most of potential line distribution impact is very micro-.From Fig. 5 (a) and Fig. 5 (b), when pressed on ring 33 height is reduced to 0.5mm by 1.5mm, middle ring less than 32 Electric Field Distribution does not almost change.Fig. 5 (c) shows crystal round fringes ion incident angles distribution radially when adopting technical scheme of the present invention, and solid line and dotted line are respectively pressed on ring 33 highly for ion incident angles during 1.5mm and 0.5mm is with the change curve of radius.Contrasted from two figure, when pressed on ring 33 height be reduced to 0.5mm by 1.5mm, adopt apparatus of the present invention time, same position not in the same time ion incident angles change between 1 ° ~ 1.5 °.For at the radial 148mm place of wafer, when adopting apparatus of the present invention, pressed on ring 33 highly for ion incident angles during 1.5mm and 0.5mm be respectively-5.6 ° with-7 °, excursion is 1.4 °.
As a comparison, middle ring 32 being elected as the material quartz same with pressed on ring 33 and lower ring 31, be also existing focusing ring structure, but in not maintaining, ring 32 current potential is predeterminated voltage.The crystal round fringes Electric Field Distribution of its correspondence is shown in Fig. 6 (a) and Fig. 6 (b), and when pressed on ring 33 height is reduced to 0.5mm by 1.5mm, crystal round fringes Electric Field Distribution is obviously different.Fig. 6 (c) shows crystal round fringes ion incident angles distribution radially when not adopting technical scheme of the present invention, and solid line and dotted line are respectively pressed on ring 33 highly for ion incident angles during 1.5mm and 0.5mm is with the change curve of radius.When pressed on ring 33 height is reduced to 0.5mm by 1.5mm, do not adopt during apparatus of the present invention and change greatly the closer to wafer 2 edge ion incident angles.For at the radial 148mm place of wafer, when not adopting apparatus of the present invention, pressed on ring 33 highly is respectively-0.5 ° and-3.5 ° for ion incident angles during 1.5mm and 0.5mm, and excursion is 3 °, is more than 2 times of apparatus of the present invention of employing.
As from the foregoing, adopt device of the present invention, along with the carrying out of etching, although the pressed on ring of focusing ring is corroded gradually, it reduces highly gradually, but because middle ring limits the Electric Field Distribution near crystal round fringes, plasma characteristics (especially ion incident angles) impact of pressed on ring height change on crystal round fringes is very little, can ensure that larger change does not occur the perpendicularity of the Etching profile of crystal round fringes.Therefore, in plasma etch process, technical scheme of the present invention can keep the perpendicularity of wafer 2 etching edge section, significantly improves the yields in crystal round fringes region.Along with the carrying out of etching, only need to regularly replace pressed on ring 33, simple to operate, cost reduces greatly.
Although illustrate and describe embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change above-described embodiment within the scope of the invention when not departing from principle of the present invention and aim, revising, replacing and modification.
Claims (6)
1. a plasma etching apparatus, is characterized in that, comprising:
Slide holder, described slide holder is used for support wafer to be etched;
Focusing ring, described focusing ring is around being arranged on around described slide holder, and described focusing ring does not contact with described wafer, and wherein, described focusing ring comprises: lower ring, and described lower ring adopts the insulator of anti-plasma corrosion to make; Middle ring, described middle ring is positioned on described lower ring, adopts conductor to make; Pressed on ring, described pressed on ring is arranged on described ring, adopts semiconductor or insulator to make;
Wherein, described middle ring is loaded with predeterminated voltage, and the size of described predeterminated voltage equals the near maximum value of the cycle average voltage in plasma discharge processes.
2. plasma etching apparatus according to claim 1, is characterized in that, the material of described lower ring is alundum (Al2O3).
3. plasma etching apparatus according to claim 1, is characterized in that, the material of described middle ring is aluminium.
4. plasma etching apparatus according to claim 1, is characterized in that, the material of described pressed on ring is silicon, carborundum or quartz.
5. the plasma etching apparatus according to any one of claim 1-4, is characterized in that, the interface between the middle ring of described focusing ring and lower ring is higher than the end face of sheaths when carrying out plasma etching.
6. plasma etching apparatus according to claim 5, is characterized in that, the thickness of described middle ring is 0.2-0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410053269.6A CN103811247B (en) | 2014-02-17 | 2014-02-17 | For plasma etching focusing ring and there is its plasma etching apparatus |
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| CN201410053269.6A CN103811247B (en) | 2014-02-17 | 2014-02-17 | For plasma etching focusing ring and there is its plasma etching apparatus |
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| CN103811247B true CN103811247B (en) | 2016-04-13 |
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Families Citing this family (10)
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| CN105185732A (en) * | 2015-08-24 | 2015-12-23 | 沈阳拓荆科技有限公司 | Ceramic ring capable of changing shape and appearance of surface film of wafer |
| CN106920729B (en) * | 2015-12-28 | 2019-05-31 | 中微半导体设备(上海)股份有限公司 | A kind of plasma processing apparatus and method of uniform etching substrate |
| KR101909479B1 (en) * | 2016-10-06 | 2018-10-19 | 세메스 주식회사 | Substrate support unit, substrate treating apparauts including the same, and method for controlling the same |
| US20180334746A1 (en) * | 2017-05-22 | 2018-11-22 | Lam Research Corporation | Wafer Edge Contact Hardware and Methods to Eliminate Deposition at Wafer Backside Edge and Notch |
| CN109216144B (en) * | 2017-07-03 | 2021-08-06 | 中微半导体设备(上海)股份有限公司 | Plasma reactor with low-frequency radio frequency power distribution adjusting function |
| JP7037964B2 (en) * | 2018-03-09 | 2022-03-17 | 東京エレクトロン株式会社 | How the system operates to inspect the measuring instrument and focus ring |
| CN109256316A (en) * | 2018-09-29 | 2019-01-22 | 德淮半导体有限公司 | Plasma etching apparatus and its method for etching plasma |
| CN111383887A (en) * | 2018-12-27 | 2020-07-07 | 江苏鲁汶仪器有限公司 | Device and method for improving plasma etching uniformity |
| CN111653469B (en) * | 2020-06-30 | 2024-01-09 | 上海华力集成电路制造有限公司 | Focusing ring applied to etching equipment, forming method thereof and etching equipment |
| CN112652515B (en) * | 2020-12-09 | 2023-08-15 | 长江存储科技有限责任公司 | Plasma etching device and edge ring thereof |
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| TW200520632A (en) * | 2003-09-05 | 2005-06-16 | Tokyo Electron Ltd | Focus ring and plasma processing apparatus |
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| US7837827B2 (en) * | 2007-06-28 | 2010-11-23 | Lam Research Corporation | Edge ring arrangements for substrate processing |
| CN102800547B (en) * | 2011-05-27 | 2015-07-08 | 中微半导体设备(上海)有限公司 | Modulable focus ring and method for adjusting plasma processor by using focus ring |
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| CN101303997A (en) * | 2003-04-24 | 2008-11-12 | 东京毅力科创株式会社 | Plasma processing apparatus, focus ring, and susceptor |
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Inventor after: Feng Juan Inventor after: Han Wenbin Inventor after: Duan Wenrui Inventor after: Tian Ling Inventor before: Han Wenbin Inventor before: Feng Juan Inventor before: Duan Wenrui Inventor before: Tian Ling |
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