CN103809239B - Sub-wavelength waveguide and preparation method - Google Patents
Sub-wavelength waveguide and preparation method Download PDFInfo
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- CN103809239B CN103809239B CN201210445107.8A CN201210445107A CN103809239B CN 103809239 B CN103809239 B CN 103809239B CN 201210445107 A CN201210445107 A CN 201210445107A CN 103809239 B CN103809239 B CN 103809239B
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000001259 photo etching Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000000835 fiber Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
The present invention provides a kind of sub-wavelength waveguide and preparation method. First, hard mask is deposited at oxygen-containing group basal surface; Subsequently, periodically single photoetching offset plate figure layer is produced in described hard mask surface; Then, the hard mask pattern layer of single periodicity is formed with this periodicity single photoetching offset plate figure layer for mask; Finally, with single periodicity hard mask pattern layer for mask the top layer at the bottom of described oxygen-containing group performed etching and form the single periodicity column structure that can transmit sub-wavelength ripple, the sub-wavelength waveguiding structure of the present invention is compact, preparation method energy and ic process compatibility.
Description
Technical field
The present invention relates to semi-conductor photoelectronic field, particularly relate to a kind of sub-wavelength waveguide and preparation method.
Background technology
Along with the decline of silicon integrated circuit characteristic size, unit are transistor density is exponentially increased, and the manufacturing process that the year two thousand twenty characteristic size is about 10nm will put into volume production, and transistor density will be 16 times of 2009. Along with the feature area of chip clock frequency more and more less, signal is more and more higher, clock synchronization requirement is become increasingly complex by signal, the electrical interconnection technology based on copper-connection will be increasingly difficult to the demand meeting chip chamber high-density optical communication and light exchange sustainable growth.
Light network technology due to possess band roomy, low in energy consumption, postpone short, without crosstalk and the advantage such as coupling and electromagnetic compatibility, become the key technology meeting supercomputing and magnanimity information transmission requirement. Comparatively speaking, the delay of optic communication depends primarily on the architecture of light exchange, power consumption mainly consumes on opto-electronic conversion end points, and does not increase extra power consumption in transmittance process, hence helps to reduce bandwidth/power consumption ratio that global communication postpones and improves global communication; And when relatively low loss, the problems such as the crosstalk caused by high speed transmission of signals, the generation of reduction distorted signals can be effectively prevented from, it is achieved higher signal integrity. Additionally, light network technology is not subjected to the restriction of chip pin, off-chip bandwidth can be greatly increased, therefore adopt light network can overcome electromagnetic interference and the bandwidth bottleneck of electrical interconnection, it is thus achieved that better systematic function, support more massive IC chip interference networks. The use of low-power consumption high density optic electric interface module, it is also possible to the power consumption reducing whole system obtains higher system density.
Compared with assembling, with based on early iii-v optical device and fiber optic network, the optical interconnection system built, based on the silicon based opto-electronics integrated technology of integrated circuit technology be capable of light be electrically integrated, can be mass-produced, the advantage of low cost and two-forty, be increasingly becoming the key technology solving interconnection problems. The core passive device constituting silicon based opto-electronics integrated chip is fiber waveguide, and its functional equivalent is in the optical fiber of fiber optic network, for the transmission of optical signal, is also the necessary component of all kinds of core silicon-based photoelectric device. At present in silica-based fiber waveguide the most frequently used to monomode optical waveguide be the nano-wire optical waveguide of 500nm × 220nm, develop into compared with the mainstream technology of 32nm with integrated circuit, fiber waveguide and corresponding optical device seem particularly heavy, therefore low-power consumption and small size are also the developing direction of silicon based opto-electronics integrated chip and core devices, are also realize the technology requirement that light is electrically integrated.
Sub-wavelength waveguide, as the term suggests being exactly the fiber waveguide than an optical wavelength also little order of magnitude, is exactly the size waveguide at hundred nanometer scale characteristic line breadths for communication band. Current this kind of waveguide is mainly by following several classes: metal surface phasmon sub-wavelength waveguide, air seam waveguide and photon crystal wave-guide etc. Metal surface phasmon is utilized to be easier to realize the sub-wavelength waveguide of compact conformation, yet with the metal absorption for communication band light wave and the material such as gold silver commonly used can not be completely compatible with integrated circuit technology, be not therefore the first-selection of sub-wavelength waveguide; Photonic crystal sub-wavelength waveguide needs to prepare photonic crystal arrays, realizes line defect wherein or utilizes auto-collimation principle to carry out beam Propagation, first and last causing that waveguide area is excessive.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of simple in construction and the little sub-wavelength waveguide of absorption loss.
Another object of the present invention is to provide a kind of can with the method preparing sub-wavelength waveguide of ic process compatibility.
For achieving the above object and other relevant purposes, the present invention provides a kind of method preparing sub-wavelength waveguide, and it at least includes:
A) hard mask is deposited at oxygen-containing group basal surface;
B) periodically single photoetching offset plate figure layer is produced in described hard mask surface;
C) the hard mask pattern layer of single periodicity is formed with this periodicity single photoetching offset plate figure layer for mask;
D) with single periodicity hard mask pattern layer for mask the top layer at the bottom of described oxygen-containing group performed etching and form the single periodicity column structure that can transmit sub-wavelength ripple.
Preferably, it is mask with this periodicity single photoetching offset plate figure layer, adopts reactive ion beam etching (RIBE) or ion beam etching to form the hard mask pattern layer of single periodicity.
Preferably, it is mask with single periodicity hard mask pattern layer, adopts deep reactive ion bundle etching or reactive ion beam etching (RIBE) the top layer at the bottom of described oxygen-containing group to be performed etching and forms the single periodicity column structure that can transmit sub-wavelength ripple.
The present invention provides a kind of sub-wavelength waveguide, and it at least includes: at the bottom of oxygen-containing group, and its top layer is etched to and forms the single periodicity column structure that can transmit sub-wavelength ripple.
Preferably, at the bottom of described oxygen-containing group it is germanium on the silicon on insulator, the SiGe on insulator or insulator.
Preferably, the single cylinder in single periodicity column structure becomes cylinder.
Preferably, the radius of the single cylinder in single periodicity column structure is 25 nanometers ~ 200 nanometers.
Preferably, the arrangement cycle of the cylinder in single periodicity column structure is 2 ~ 4 times of cylinder radius.
Preferably, the top layer thickness scope at the bottom of oxygen-containing group is at 1 ~ 10 micron.
Preferably, the oxygenous layer thickness at the bottom of oxygen-containing group is 0.5 ~ 3 micron.
As it has been described above, the sub-wavelength waveguide of the present invention and preparation method, have the advantages that it can be avoided that adopt the absorption loss that the sub-wavelength waveguide device of metal material has, compact conformation, and and ic process compatibility.
Accompanying drawing explanation
Fig. 1 to Fig. 6 is shown as the method flow diagram preparing sub-wavelength waveguide of the present invention.
The image schematic diagram that Fig. 7 is shown as the sub-wavelength waveguide in the SOI substrate of the present invention that machines and light beam is propagated in this sub-wavelength waveguide.
Element numbers explanation
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art the content disclosed by this specification can understand other advantages and effect of the present invention easily.The present invention can also be carried out by additionally different detailed description of the invention or apply, and the every details in this specification based on different viewpoints and application, can also carry out various modification or change under the spirit without departing from the present invention.
Refer to Fig. 1 to Fig. 7. It should be noted that, the diagram provided in the present embodiment only illustrates the basic conception of the present invention in a schematic way, then assembly that in graphic, only display is relevant with the present invention but not component count when implementing according to reality, shape and size drafting, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout kenel is likely to increasingly complex.
The method preparing sub-wavelength waveguide of the present invention at least comprises the following steps:
The first step: deposit hard mask at oxygen-containing group basal surface.
Such as, it is provided that a piece of as the SOI substrate 1 at the bottom of oxygen-containing group, as it is shown in figure 1, this SOI substrate 1 includes silicon substrate 11, buried layer of silicon dioxide 12 and top layer silicon 13. Wherein, this SOI substrate 1 thickness 500 microns, the thickness of buried layer of silicon dioxide 12 is 2 microns, and the thickness of top layer silicon 13 is 1 micron.
This SOI substrate 1 is aoxidized, top layer silicon 13 forms 100 nanosized SiO_2 as hard mask 2, as shown in Figure 2.
Second step: produce periodically single photoetching offset plate figure layer in described hard mask surface.
Such as, carrying out photoetching in the structure front shown in Fig. 2, form the single photoetching offset plate figure layer 3 of round shape, as it is shown on figure 3, wherein, single photoetching offset plate figure layer 3 was made up of 100 cycles, and the cycle is 300nm, and the single cylinder pattern diameter of photoetching offset plate figure layer is 100nm.
3rd step: form the hard mask pattern layer of single periodicity for mask with this periodicity single photoetching offset plate figure layer.
Such as, with the single photoetching offset plate figure layer of the periodicity shown in Fig. 3 for mask, adopt the hard mask 2 of reactive ion beam etching (RIBE), namely etch SiO2, form the hard mask pattern layer 4 of single periodicity, as shown in Figure 4.
4th step: with single periodicity hard mask pattern layer for mask the top layer at the bottom of described oxygen-containing group performed etching and form the single periodicity column structure that can transmit sub-wavelength ripple.
Such as, with the hard mask pattern layer 4 of the single periodicity shown in Fig. 4 for mask, adopt deep reactive ion bundle etching top layer silicon 13, form single periodicity silicon cylinder 5, as it is shown in figure 5, wherein, silicon cylinder 5 height 1 micron; Remove photoresist cylinder 3 subsequently again, form the single periodicity column structure that can transmit the sub-wavelength ripple for 1.55 microns of communication bands, as shown in Figure 6.
It should be noted that described above being only merely lists, but not limitation of the present invention, for instance, can also be the SiGe (GeSiOI) on insulator or the germanium (GeOI) etc. on insulator at the bottom of the oxygen-containing group of employing; Again for example, it is also possible to deposit one layer of SiON or SiNx as hard mask etc. at oxygen-containing group basal surface.
At least including based on the sub-wavelength waveguide prepared by above-mentioned preparation method: at the bottom of oxygen-containing group, its top layer is etched to and forms the single periodicity column structure that can transmit sub-wavelength ripple, as shown in Figure 7. Wherein, in Fig. 7 the figure of label a be the sub-wavelength waveguide schematic diagram in the SOI substrate machined, the figure that is numbered b be the image schematic diagram that light beam is propagated in the waveguide.
Wherein, at the bottom of described oxygen-containing group it is the silicon (SOI) on insulator, the SiGe on insulator or the germanium etc. on insulator;Top layer thickness scope at the bottom of oxygen-containing group is at 1 ~ 10 micron; Oxygenous layer thickness at the bottom of oxygen-containing group is 0.5 ~ 3 micron.
Wherein, the single cylinder in single periodicity column structure becomes cylinder, and the radius of the single cylinder in single periodicity column structure is 25 nanometers ~ 200 nanometers; The cylinder arrangement cycle in single periodicity column structure is 2 ~ 4 times of cylinder radius.
In sum, the present invention is based on the high-index material of the integrated circuit compatibilities such as SiGe, utilize the resonance coupling principle being similar to metal surface phasmon, single column structure is utilized to realize sub-wavelength waveguide, narrow down to sub-wavelength dimensions relative to conventional silicon nanowires waveguide dimensions, be more conducive to reduction chip area and light is electrically integrated; Simpler with the waveguide structure compared adopted in photon crystal linear defect and auto-collimation institute, avoid absorption loss compared with the metal sub-wavelength waveguide with metal surface phasmon principle; And there is the characteristic of ic process compatibility. So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
Above-described embodiment is illustrative principles of the invention and effect thereof only, not for the restriction present invention. Above-described embodiment all under the spirit and category of the present invention, can be modified or change by any those skilled in the art. Therefore, art has usually intellectual such as modifying without departing from all equivalences completed under disclosed spirit and technological thought or change, must be contained by the claim of the present invention.
Claims (3)
1. the method preparing sub-wavelength waveguide, it is characterised in that the described method preparing sub-wavelength waveguide at least includes:
A) hard mask is deposited at oxygen-containing group basal surface;
B) periodically single photoetching offset plate figure layer is produced in described hard mask surface;
C) the hard mask pattern layer of single periodicity is formed with this periodicity single photoresist cylinder graph layer for mask;
D) with single periodicity hard mask pattern layer for mask the top layer at the bottom of described oxygen-containing group performed etching and form the single periodicity column structure that can transmit sub-wavelength ripple.
2. the method preparing sub-wavelength waveguide according to claim 1, it is characterised in that: it is mask with this periodicity single photoetching offset plate figure layer, adopts ion beam etching to form the hard mask pattern layer of single periodicity.
3. the method preparing sub-wavelength waveguide according to claim 1, it is characterised in that: it is mask with single periodicity hard mask pattern layer, adopts reactive ion beam etching (RIBE) that the top layer at the bottom of described oxygen-containing group performed etching to form the single periodicity column structure that can transmit sub-wavelength ripple.
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| CN201210445107.8A CN103809239B (en) | 2012-11-09 | 2012-11-09 | Sub-wavelength waveguide and preparation method |
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| CN201210445107.8A CN103809239B (en) | 2012-11-09 | 2012-11-09 | Sub-wavelength waveguide and preparation method |
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| CN107942415A (en) * | 2017-12-07 | 2018-04-20 | 河北工程大学 | A kind of method for preparing sub-wavelength antireflection press mold |
| CN108037561A (en) * | 2017-12-14 | 2018-05-15 | 中国科学院光电技术研究所 | Waveguide structure for phase regulation and control of chip laser radar based on super surface |
| CN111025473B (en) * | 2019-11-22 | 2022-06-28 | 纤瑟(天津)新材料科技有限公司 | Coupling structure for establishing coupling between solid waveguide and SWG waveguide |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181635A (en) * | 1996-10-28 | 1998-05-13 | 索尼株式会社 | Quantum wires formed on substrate, manufacturing method thereof, and device having quantum wires on substrate |
| CN1801478A (en) * | 2004-06-10 | 2006-07-12 | 台湾积体电路制造股份有限公司 | Semiconductor devices, semiconductor nano-wire devices and methods of fabrication the same |
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| KR101593506B1 (en) * | 2011-04-20 | 2016-02-12 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | Sub-wavelength grating-based optical elements |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181635A (en) * | 1996-10-28 | 1998-05-13 | 索尼株式会社 | Quantum wires formed on substrate, manufacturing method thereof, and device having quantum wires on substrate |
| CN1801478A (en) * | 2004-06-10 | 2006-07-12 | 台湾积体电路制造股份有限公司 | Semiconductor devices, semiconductor nano-wire devices and methods of fabrication the same |
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Effective date of registration: 20170614 Address after: 226009 Jiangsu city of Nantong province science and Technology Industrial Park of Su Tong Jiang Cheng Road No. 1088 Jiang Bei Lou Park Development Research Co-patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Patentee after: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Address before: 226009 Nantong science and Technology Industrial Park, Su Tong Road, Jiangsu, No. 14, No. 30 Co-patentee before: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Patentee before: JIANGSU SUNFY OPTOELECTRONICS TECHNOLOGY CO.,LTD. Co-patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
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Address after: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee after: Nantong Xinwei Research Institute Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee before: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address after: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee after: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee before: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
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Effective date of registration: 20240529 Address after: 200050 No. 865, Changning Road, Shanghai, Changning District Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Country or region after: China Address before: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee before: Nantong Xinwei Research Institute Country or region before: China Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |