CN103806093A - Epitaxial growth device and method for ICP (inductively coupled plasma) based compound semiconductor - Google Patents
Epitaxial growth device and method for ICP (inductively coupled plasma) based compound semiconductor Download PDFInfo
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- CN103806093A CN103806093A CN201410053424.4A CN201410053424A CN103806093A CN 103806093 A CN103806093 A CN 103806093A CN 201410053424 A CN201410053424 A CN 201410053424A CN 103806093 A CN103806093 A CN 103806093A
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Abstract
The invention discloses an epitaxial growth device and method for an ICP (inductively coupled plasma) based compound semiconductor. The device comprises a vacuum reaction chamber, a sample table, an ICP excitation unit, a first gas path and a second gas path, wherein the sample table is arranged at the bottom of the vacuum reaction chamber; the ICP excitation unit is located at the top of the vacuum reaction chamber; the first gas path is provided with a first gas inlet, and used for feeding a first gaseous reaction source into the vacuum reaction chamber; the second gas path is provided with a second gas inlet, and used for feeding a second gaseous reaction source into the vacuum reaction chamber; the ICP excitation unit is used for exciting the first gaseous reaction source and the second gaseous reaction source to carry out ionized decomposition, and the sample table can be heated so as to carry out thermal cracking on the first gaseous reaction source and the second gaseous reaction source, so that epitaxial growth is implemented. The epitaxial growth device and method disclosed by the invention have the advantages of low growth temperature and good film quality.
Description
Technical field
The invention belongs to film growth apparatus technical field, be specifically related to the low-temperature epitaxy growth device and method of the compound semiconductor of a kind of inductively coupled plasma (Inductively Coupled Plasma, ICP).
Background technology
Novel cpd semiconductor material take GaN, SiC as representative enjoys attention in recent ten years in the world, at UV/blue/green light LED, laser apparatus, detector, and there is important and application widely the aspect such as high-frequency high temperature high-power electronic device.
In order to obtain good device performance, require compound semiconductor film as far as possible in monocrystalline state.The epitaxial growth method of compound semiconductor mainly contains molecular beam epitaxy (MBE) and metal organic-matter chemical vapour phase epitaxy (MOVPE) at present.Because MBE has vacuum condition requirement harshness, the slow shortcoming of growth velocity, generally adopt MOVPE to carry out commercially producing of compound semiconductor epitaxial growth at present.
In the MOVPE of compound semiconductor process of growth, require reactant to be diffused into substrate surface in the mode of laminar flow, in reactions such as substrate surface generation cracking, chemical combination and migrations, thereby form compound semiconductor single crystal film.Existing MOVPE, the mode that reactant cracking, chemical combination, the required energy of migration mainly heat by substrate obtains, because reactant gases exists stronger chemical bond, and the energy that reactant particle need to be certain in substrate surface migration, thereby require substrate in epitaxial process to there is high temperature.Take MOVPE epitaxy GaN as example, reactant is generally Ga (CH
3)
3and NH
3, Ga (CH
3)
3approximately 500 ℃ of cracking temperatures, NH
3cracking temperature be about 700 ℃, then consider the migration of GaN at substrate surface, general epitaxial growth temperature approaches 1000 ℃.If adopt Ga (CH
3)
3and N
2carry out extension, due to N
2chemical bond is stronger, needs higher growth temperature.
Although, as LED, also there are a lot of problems in the opto-electronic device that high temperature epitaxy realizability can be good.First, substrate material and size-constrained.Due to the requirement of high temperature resistant and lattice match, the substrate that can be used at present compound semiconductor epitaxial growth can only be a few single crystalline substrate, such as the Al for growing GaN base semiconductor
2o
3, Si, for the GaAs of the GaAs base semiconductor of growing, for the semi-conductive SiC of the SiC that grows, Si etc., these single crystalline substrate costs are higher, size-constrained, are difficult to directly carry out the big area epitaxy of compound semiconductor.And can be used for the substrate of large area film substrate, as glass, plastics etc., be all difficult to again steady operation under hot conditions.Secondly, because the thermal expansivity of substrate and epitaxial film often exists certain difference, epitaxial temperature is higher, and the stress of semiconductor film is just larger, directly affects the performance of device.Again, chemical reaction corresponding to general hope deposition only carries out at substrate surface, reduces substrate surface pre-reaction in addition as far as possible, and under hot conditions, is difficult to the pre-reaction of control reactant gases beyond substrate surface.
The problem of bringing for MOVPE high growth temperature, people have proposed plasma body and have strengthened MOVPE(PE-MOVPE) idea, wish, by low-temperature plasma scission reaction thing in advance, to improve the potential energy of reactant atom, reach the object that reduces compound semiconductor epitaxial growth.The common method that produces low-temperature plasma has: capacitance coupling plasma (CCP), inductively coupled plasma (ICP), Ecr plasma (ECR).CCP reaction chamber is simple, but plasma density and energy cannot independently regulate.The plasma density of ECR is high, and energy conversion rate is high, and existing PE-MOVPE mainly adopts the mode of ECR to produce plasma body.But the moding characteristic that ECR is intrinsic, makes it be difficult to use in large-area thin film deposition.ICP can produce the analogous plasma density with ECR, has good plasma uniformity simultaneously, can in very large air pressure range, move, and in the thin film deposition of p-nJie Erjiguan non-epitaxial p-n junction diode growth, obtains a wide range of applications.
Reactant gas produces after plasma body, positive ion, metastable atom molecule and neutral atom all can be used for generating compound semiconductor, but positive ion wherein and the neutral particle of high energy can cause bombardment to substrate, thereby affect the crystallization property of compound semiconductor.Take PEMOVPE growing GaN as example, reactant gases adopts Ga (CH
3)
3and N
2in nitrogen plasma, wrap nitrogen containing plasma, nitrogen-atoms, nitrogen molecule, can participate in principle the generation of GaN, but nitrogen ion and high energy neutral particle (as nitrogen-atoms, nitrogen molecule) can cause bombardment, Ga to go the problems such as absorption, GaN decomposition and point defect to substrate.Therefore, in order to improve the crystalline quality of compound semiconductor of low-temperature epitaxy growth, must manage to reduce arriving the positive ion density at substrate place and the neutral-particle density of high energy, make low energy active particle many arrival substrates of try one's best participate in reacting simultaneously.
Summary of the invention
The present invention is intended to solve at least to a certain extent the technical problem that above-mentioned epitaxial temperature is high.
The low-temperature epitaxy growth device of the compound semiconductor based on plasma body that for this reason, one object of the present invention is to propose a kind of epitaxial temperature, film quality is good.
The low-temperature epitaxy growth method of the compound semiconductor based on plasma body that another object of the present invention is to propose a kind of epitaxial temperature, film quality is good.
For achieving the above object, the epitaxial growth device of the compound semiconductor based on ICP of the embodiment of the present invention, can comprise: vacuum reaction chamber; Sample table, described sample table is positioned at the bottom of described vacuum reaction chamber; ICP excites unit, and described ICP excites unit to be positioned at the top of described vacuum reaction chamber; There is the first gas circuit of the first inlet mouth, for pass into the first vapor reaction source to described vacuum reaction chamber; There is the second gas circuit of the second inlet mouth, for pass into the second vapor reaction source to described vacuum reaction chamber; Wherein, described ICP excites unit for exciting the ionization of described the first vapor reaction source and the second vapor reaction source to decompose, and described sample table can heat with by described the first vapor reaction source and the second vapor reaction source thermo-cracking, to carry out epitaxy.
Have advantages of that according to the epitaxial growth device of the compound semiconductor based on ICP of the invention described above embodiment growth temperature is low, film quality good.
For achieving the above object, the epitaxial growth method of the compound semiconductor based on ICP of the embodiment of the present invention, can comprise the following steps: substrate is placed in the sample table of bottom of vacuum reaction chamber; Pass into respectively the first vapor reaction source and the second vapor reaction source to described vacuum reaction chamber; Adopt the mode of electro-induction coupling activated plasma ICP that described the first vapor reaction source and the ionization of the second vapor reaction source are decomposed, and heat described substrate to preset temp so that described the first vapor reaction source and the second vapor reaction source thermo-cracking, to carry out epitaxy; Described substrate is taken out from described vacuum reaction chamber.
Have advantages of that according to the epitaxial growth method of the compound semiconductor based on ICP of the invention described above embodiment growth temperature is low, film quality good.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination is understood becoming the description of embodiment obviously and easily, wherein:
Fig. 1 is the structural representation of the epitaxial growth device of the compound semiconductor based on ICP of one embodiment of the invention.
Fig. 2 is the structural representation of the epitaxial growth device of the compound semiconductor based on ICP of another embodiment of the present invention.
Fig. 3 is the schematic diagram of the metal sheet as distance separation device of the embodiment of the present invention.
Fig. 4 is the structural representation of the epitaxial growth device of the compound semiconductor based on ICP of another embodiment of the present invention.
Fig. 5 is the sequential chart that the ALT pulse of the embodiment of the present invention passes into vapor reaction source and ICP and excite unit pulsed operation.
Fig. 6 is the structural representation of the epitaxial growth device of the compound semiconductor based on ICP of another embodiment of the present invention.
Fig. 7 is the structural representation of the epitaxial growth device of the compound semiconductor based on ICP of another embodiment of the present invention.
Fig. 8 is the schema of the epitaxial growth method of the compound semiconductor based on ICP of the embodiment of the present invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, be intended to for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " longitudinally ", " laterally ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", orientation or the position relationship of indications such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " be only for describing object, and can not be interpreted as indication or hint relative importance or the implicit quantity that indicates indicated technical characterictic.Thus, one or more these features can be expressed or impliedly be comprised to the feature that is limited with " first ", " second ".In description of the invention, the implication of " multiple " is two or more, unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, the terms such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be also electrical connection; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can understand as the case may be above-mentioned term concrete meaning in the present invention.
First aspect present invention proposes a kind of low-temperature epitaxy growth device of the compound semiconductor based on ICP, as shown in Figure 1, comprises that vacuum reaction chamber 10, sample table 20, ICP excite unit 30, the first gas circuit 40 and the second gas circuit 50.
Wherein, vacuum reaction chamber 10 can be cylindric substantially.In vacuum reaction chamber 10, be provided with vacuum pump system 10a, comprise mechanical pump and molecular pump, so that vacuum reaction chamber 10 keeps high vacuum or ultra-high vacuum state in the time not having gas to pass into, holding chamber internal gas pressure is constant in the time having gas to pass into.
Sample table 20 is located at the bottom of vacuum reaction chamber 10 conventionally, for carrier substrate.Alternatively, sample table 20 can be rotated around central point, is conducive to Material growth and obtains more even.Preferably, sample table 20 is configured to lifting in the vertical direction.For example, can regulate sample table 20 is 1-500 millimeter apart from the distance of the bottom base of vacuum reaction chamber 10.At this moment can be by changing the distance of print platform 20 and plasma generating area, regulate active low energy neutral atom in reactant gases and molecule, charged and high energy particle to arrive concentration and the energy of substrate surface.
The first gas circuit 40 is for passing into the first vapor reaction source to vacuum reaction chamber 10.The first gas circuit 40 is provided with the first inlet mouth 40a of spray hair style and controls the first mass rate control meter (MFC1) 40b of flow.The first vapor reaction source can be the material that chemical bond is stronger, for example nitrogen, oxygen, carbon oxides, particularly NH
3, N
2, C
3h
8, SiH
4or H
2the combination of one or more in O.
The second gas circuit 50 is for pass into the second vapor reaction source to vacuum reaction chamber 10, and the second gas circuit 50 is provided with the second inlet mouth 50a of spray hair style and controls the second mass rate control meter (MFC2) 50b of flow.The second vapor reaction source can be the weak material of chemical bond, for example organometallics, particularly Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Zn (CH
3)
3or Si (CH
3)
4in one or more combination.
Above-mentioned the first vapor reaction source and the second vapor reaction source epitaxial film finally obtaining that reacts can be GaN, InN, AlN, InGaN, AlGaN, SiC, ZnO etc. compound semiconductor epitaxial layer.
Above-mentioned ICP excites unit 30 to decompose for exciting the first vapor reaction source and the second vapor reaction source to ionize, wherein be mainly used in exciting the first vapor reaction source ionization to decompose, produce the low-energy plasma body of high-density, sample table 20 can be for heating the first vapor reaction source and the second vapor reaction source makes its thermo-cracking, wherein be mainly used in heating with by the second vapor reaction source thermo-cracking, to carry out epitaxy.Material stronger chemical bond is decomposed by type of heating by the material that ICP mode is decomposed, chemical bond is weak, can reduce so the needed Heating temperature of epitaxy.Wherein, sample table 20 can be with metal probe, the substrate energising heating separately that have metallic film can directly to metal substrate or surface deposition.The advantage that sample table 20 can heat is separately: the wall of container of vacuum reaction chamber 10 can keep low-temperature condition, thereby avoids the first vapor reaction source and the second vapor reaction source that pre-reaction occurs, and has also saved energy consumption simultaneously.
The low-temperature epitaxy growth device of the compound semiconductor based on ICP according to the above embodiment of the present invention, by the stronger reactant of ICP mode breaking up chemical bonds, by type of heating breaking up chemical bonds a little less than, can effectively reduce the temperature of extension reaction, improve the quality of epitaxial film.
It should be noted that, this low-temperature epitaxy growth device can also be equipped with the equipment such as plasma body viewing window 61, permanent magnet 62, Langmuir plobe 63, film thickness monitor 64.Wherein permanent magnet 62 can increase density and the homogeneity of plasma body.
In an example of the present invention, also comprise distance separation device 70, as shown in Figure 2.Vacuum reaction chamber 10 is divided into plasma discharge region A and plasma downstream district B by distance separation device 70.Wherein, positive ion and high energy neutral particle in distance separation device 70 filtering plasma discharge region A in the ionization degradation production in the first vapor reaction source, allow thermal cracking products that low energy active particle enters plasma downstream district B and the second vapor reaction source substrate surface reactions in sample table to carry out epitaxy.Because positive ion, on distance separation device 70 surfaces, complex reaction occurs, density greatly reduces, and the neutral particle of high energy also has larger decline through the collision energy of gas molecule, and the density of the needed metastable state neutral particle of epitaxy is substantially unaffected.Therefore distance separation device 70 can by the A of plasma discharge region to the disadvantageous particle basic filtering of epitaxy, will the favourable particle of epitaxy be retained substantially, then enter into plasma downstream district B.Like this, can avoid positive ion and high energy neutral particle to produce bombardment to substrate by distance separation device 70 is set, cause epitaxial layer quality not good.
Alternatively, this distance separation device 70 is for to be horizontally set on metal sheets in vacuum reaction chamber 10, uniform multiple filter openings, as shown in Figure 3.It should be noted that, although shown in Fig. 3 be the metal sheet of uniform circular filter opening, be only for the convenience of example but not restriction of the present invention can be also the geometrical shapies such as rectangular grid in further embodiments.The feet that this metal sheet can for example, be made by insulating material (quartz) stands in vacuum reaction chamber 10.Preferably, on this metal sheet, can load the direct current (DC) bias of several volts to tens volts, now this metal plate and belt positive electricity, can utilize same electric charge repel each other principle stop positive ion pass through, realize interception positive ion object.
In an example of the present invention, Time Isolation Unit 80 while also comprising, as shown in Figure 4.Time Time Isolation Unit 80 vacuum reaction chamber 10 is divided into plasma discharge region A and plasma downstream district B.In the time that ICP excites unit 30 for working order, time Time Isolation Unit 80 by plasma discharge region A and plasma downstream district B isolation, carry out Natural Attenuation so that the ionization degradation production in the first vapor reaction source is limited in to plasma discharge region A.In the time that ICP excites unit 30 for state intermittently, time Time Isolation Unit 80 plasma discharge region A and plasma downstream district B are communicated with and react to carry out epitaxy with the thermal cracking products in the second vapor reaction source so that the low energy active particle of not decaying most enters plasma downstream district B.Like this, can avoid positive ion and high energy neutral particle to produce bombardment to substrate by setup times disrupter 80, cause epitaxial layer quality not good.
Alternatively, time Time Isolation Unit 80 for be horizontally set in vacuum reaction chamber 10, by the gate of electric field controls switch or magnetic field trip switch control folding.Electric field controls switch or magnetic field trip switch have advantages of that switching speed is fast, fatigue resistance good, and are easily arranged to excite the operating frequency of unit to synchronize with ICP.
In epitaxial process, pass into the first vapor reaction source and the second vapor reaction source at the same space synchronization, easily there is pre-reaction.
For reducing the generation of pre-reaction, in one embodiment of the invention, the first inlet mouth 40a adjacent I CP excites unit 30, and the contiguous sample table 20 of the second inlet mouth 50a.And the first gas circuit 40 and the second gas circuit 50 are configured to pulse and alternately pass into respectively the first vapor reaction source and the second vapor reaction source to vacuum reaction chamber 10, and ICP excites unit 30 to be configured to adopt the pulse working mode of synchronizeing with the first gas circuit 40.Preferably, as shown in Figure 5, pass between the first vapor reaction source period and the second vapor reaction source period and have certain hour interval, a kind of vapor reaction source stops after input, input after a while another kind of vapor reaction source, avoid like this occurring the better effects if of pre-reaction.Normally, ALT pulse passes into vapor reaction source and can realize by the first mass flow controller (MFC1) 40b and the second mass flow controller (MFC2) 50b are set.
For reducing the generation of pre-reaction, in another embodiment of the present invention, as shown in Figure 6, this epitaxial growth device also comprises vertical partition plate 90, and vertical partition plate 90 is divided into vacuum reaction chamber 10 the first chamber 101 and the second chamber 102 that are isolated from each other.Wherein, the first chamber 101 is connected with the first gas circuit 40, and the second chamber 102 is connected with the second gas circuit 50.Sample table 20 is constructed to do between the first chamber 101 and the second chamber 102 periodically and moves simultaneously, so that sample table 20 alternately contacts the first vapor reaction source and the second vapor reaction source.In this embodiment, the first vapor reaction source and the second vapor reaction source can pass into constantly.It should be noted that, periodically movement can be rotating around central point shown in Fig. 6, can be also the forms such as other reciprocal translations, and those skilled in the art are flexible design as required.
It should be noted that, in epitaxial growth device of the present invention, can realize by the combination of technical scheme " filtering out suitable reactions particle " and " avoiding occurring pre-reaction " dual purpose simultaneously.For example, vertical partition plate 90 can be set in vacuum reaction chamber 10, vertical partition plate 90 is divided into vacuum reaction chamber 10 the first chamber 101 and the second chamber 102 that are isolated from each other.Meanwhile, in the first chamber 101 and the second chamber 102, be respectively arranged with distance separation device 70.This embodiment as shown in Figure 7.
Second aspect present invention proposes a kind of epitaxial growth method of the compound semiconductor based on ICP, as shown in Figure 8, can comprise the following steps:
A. substrate is placed in the sample table of bottom of vacuum reaction chamber;
B. pass into respectively the first vapor reaction source and the second vapor reaction source to vacuum reaction chamber;
C. adopt the mode of electro-induction coupling activated plasma that the first vapor reaction source and the ionization of the second vapor reaction source are decomposed, and heated substrate is to preset temp so that the first vapor reaction source and the second vapor reaction source thermo-cracking are carried out epitaxy;
D. substrate is taken out from vacuum reaction chamber.
Preferably, when the chemical bond in the first vapor reaction source is better than the chemical bond in described the second vapor reaction source, the first vapor reaction source mainly ionizes decomposition by ICP mode, and the second vapor reaction source is mainly by type of heating thermo-cracking.
The low-temperature epitaxy growth device of the compound semiconductor based on ICP according to the above embodiment of the present invention, by the stronger reactant of ICP mode breaking up chemical bonds, by type of heating breaking up chemical bonds a little less than, can effectively reduce the temperature of extension reaction, improve the quality of epitaxial film.
In an example of the present invention, ionization dissociating product to the first vapor reaction source carries out spatial separation operation, be filtering positive ion and high energy neutral particle, allow low energy active particle to reach substrate surface and react to carry out epitaxy with the thermal cracking products in the second vapor reaction source.Can avoid like this positive ion and high energy neutral particle to produce bombardment to substrate, cause epitaxial layer quality not good.
In an example of the present invention, ionization dissociating product to the first vapor reaction source carries out spatial separation operation, positive ion and the high energy neutral particle decay of leaving, allows unbated low energy active particle to reach substrate surface and reacts to carry out epitaxy with the thermal cracking products in the second vapor reaction source.Can avoid like this positive ion and high energy neutral particle to produce bombardment to substrate, cause epitaxial layer quality not good.
In an example of the present invention, it is characterized in that, sample table is configured to lifting in the vertical direction.At this moment can be by changing the distance of print platform and plasma generating area, regulate active low energy neutral atom in reactant gases and molecule, charged and high energy particle to arrive concentration and the energy of substrate surface.
In an example of the present invention, pulse alternately passes into respectively the first vapor reaction source and the second vapor reaction source to vacuum reaction chamber, and also carries out electro-induction coupling when passing into the first vapor reaction source and excite.Can effectively avoid like this first vapor reaction source and the second vapor reaction source that pre-reaction occurs.
In an example of the present invention, this epitaxial growth method also comprises: vacuum reaction chamber is spatially divided into the first chamber and the second chamber, continue respectively to pass into the first vapor reaction source and the second vapor reaction source, and sample table is done between the first chamber and the second chamber periodically and moved, so that sample table alternately contacts the first vapor reaction source and the second vapor reaction source.Can effectively avoid like this first vapor reaction source and the second vapor reaction source that pre-reaction occurs.
In an example of the present invention, the first vapor reaction source can be NH
3, N
2, C
3h
8or H
2the combination of one or more in O.
In an example of the present invention, the second vapor reaction source can be Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Zn (CH
3)
3or SiH
4in one or more combination.
For making those skilled in the art understand better epitaxial growth device of the present invention and method, enumerate four embodiment below and be introduced.
Embodiment 1
Describe with reference to Fig. 1, stationary substrate in sample table 20, then, utilizes vacuum pump system 10a that the gas of vacuum reaction chamber 10 inside is discharged, and makes base vacuum degree be less than or equal to 10
-4mTorr.Rely on sample table 20 heated substrate and make it to keep the temperature of 500 ℃.Then, to the first inlet mouth 40a input N
2, to the second inlet mouth 50a input TMGa, make chamber inner pressure remain by force 3Torr by vacuum pump system 10a simultaneously.Finally open ICP and excite unit 30, produce nitrogen plasma, start the epitaxy of GaN.
Embodiment 2
Describe with reference to Fig. 1, stationary substrate in sample table 20, then, utilizes vacuum pump system 10a that the gas of vacuum reaction chamber 10 inside is discharged, and makes base vacuum degree be less than or equal to 10
-4mTorr.Rely on sample table 20 heated substrate and make it to keep the temperature of 500 ℃.Following two steps that hocket, start the epitaxy of GaN: the N that is (a) 50sccm to the first inlet mouth 40a input flow rate
2, enter gas port 50a to second and input TMGa, make chamber inner pressure remain by force 0.1Torr by vacuum pump system 10a.Continue 1min.(b) close the second inlet mouth 50a, make the first inlet mouth 40a input flow rate become 50sccm simultaneously, make chamber inner pressure remain by force 3Torr by vacuum pump system 10a.Open ICP and excite unit 30, produce nitrogen plasma.Continue 1min.
Embodiment 3
Describe stationary substrate in sample table 20 with reference to Fig. 2.Then, utilize vacuum pump system 10a that the gas of vacuum reaction chamber 10 inside is discharged, make base vacuum degree be less than or equal to 10
-3pa.Rely on sample table 20 heated substrate to 530 ℃, keep it fully being given vent to anger in 20 minutes.Then underlayer temperature is dropped to 500 ℃, from the first inlet mouth 40a input N
2, gas flow is 100～1000sccm; Pass into by carrier gas H from the second inlet mouth 50a
2ga (the CH of dilution
3)
3, N
2and Ga (CH
3)
3throughput ratio be 100:1～10:1, make chamber inner pressure remain by force 1～100Pa by vacuum pump system 10a.Open ICP and excite unit 30, produce nitrogen plasma, simultaneously on distance separation device 70, add 10～100V positive voltage, absorbed nitrogen ion and high energy nitrogen neutral particle, allow Low Energy Nitrogen neutral particle and Ga (CH
3)
3thereby reaction epitaxy GaN on substrate.
Embodiment 4
Describe stationary substrate in sample table 20 with reference to Fig. 6.Then, utilize vacuum pump system 10a that the gas of vacuum reaction chamber 10 inside is discharged, make base vacuum degree be less than or equal to 10
-3pa.Rely on sample table 20 heated substrate to 430 ℃, keep it fully being given vent to anger in 20 minutes.Then, underlayer temperature is dropped to 400 ℃, from the first inlet mouth 40a input N
2, gas flow is 100～1000sccm; Pass into by carrier gas H from the second inlet mouth 50a
2al (the CH of dilution
3)
3, N
2and Al (CH
3)
3throughput ratio be 100:1～10:1, make chamber inner pressure remain by force 1～100Pa by vacuum pump system 10a.Open ICP and excite unit 30, produce the plasma body that contains nitrogen and aluminium active particle, on distance separation device 90, add 10～100V positive voltage simultaneously.Allow sample table 20 rotate with the speed of 1～1000 rev/min, be alternately exposed to the first chamber 101 and the second chamber 102, adsorption activity nitrogen and aluminium neutral particle carry out the epitaxy of AlN.
In the description of this specification sheets, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And specific features, structure, material or the feature of description can be with suitable mode combination in any one or more embodiment or example.
Although illustrated and described embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change above-described embodiment within the scope of the invention in the situation that not departing from principle of the present invention and aim, modification, replacement and modification.
Claims (20)
1. an epitaxial growth device for the compound semiconductor based on ICP, is characterized in that, comprising:
Vacuum reaction chamber;
Sample table, described sample table is positioned at the bottom of described vacuum reaction chamber;
ICP excites unit, and described ICP excites unit to be positioned at the top of described vacuum reaction chamber;
There is the first gas circuit of the first inlet mouth, for pass into the first vapor reaction source to described vacuum reaction chamber;
There is the second gas circuit of the second inlet mouth, for pass into the second vapor reaction source to described vacuum reaction chamber;
Wherein, described ICP excites unit for exciting the ionization of described the first vapor reaction source and the second vapor reaction source to decompose, and described sample table can heat with by described the first vapor reaction source and the second vapor reaction source thermo-cracking, to carry out epitaxy.
2. the epitaxial growth device of the compound semiconductor based on ICP according to claim 1, it is characterized in that, the chemical bond in described the first vapor reaction source is better than the chemical bond in described the second vapor reaction source, described ICP excites unit to be mainly used in exciting described the first vapor reaction source ionization to decompose, and described sample table can heat and is mainly used in described the second vapor reaction source thermolysis.
3. the epitaxial growth device of the compound semiconductor based on ICP according to claim 1, is characterized in that, also comprises:
Distance separation device, described vacuum reaction chamber is divided into plasma discharge region and plasma downstream district by described distance separation device, wherein, positive ion in the ionization degradation production in the first vapor reaction source and high energy neutral particle described in plasma discharge region described in described distance separation device filtering, allow low energy active particle to enter described plasma downstream district and react to carry out epitaxy with the thermal cracking products in described the second vapor reaction source.
4. the epitaxial growth device of the compound semiconductor based on ICP according to claim 3, it is characterized in that, described distance separation device is to be horizontally set on metal sheets in described vacuum reaction cavity, uniform multiple filter openings, on described metal sheet, is loaded with direct current (DC) bias.
5. the epitaxial growth device of the compound semiconductor based on ICP according to claim 1, is characterized in that, also comprises:
Time Time Isolation Unit, when described, described vacuum reaction chamber is divided into plasma discharge region and plasma downstream district by Time Isolation Unit, wherein, when described, Time Isolation Unit is configured to:
In the time that described ICP excites unit to be working order, when described Time Isolation Unit by described plasma discharge region and plasma downstream separate from, carry out Natural Attenuation so that the ionization degradation production in described the first vapor reaction source is limited in to described plasma discharge region;
Be intermittently when state when described ICP excites unit, when described, Time Isolation Unit is communicated with described plasma discharge region and plasma downstream district to react to carry out epitaxy with the thermal cracking products in described the second vapor reaction source so that the low energy active particle of not decaying most enters described plasma downstream district.
6. the epitaxial growth device of the compound semiconductor based on ICP according to claim 5, it is characterized in that, when described Time Isolation Unit be horizontally set in described vacuum reaction chamber, by the gate of electric field controls switch or magnetic field trip switch control folding.
7. according to the epitaxial growth device of the compound semiconductor based on ICP described in claim 1-6, it is characterized in that, the contiguous described ICP of described the first inlet mouth excites unit, and the contiguous described sample table of described the second inlet mouth, described the first gas circuit and described the second gas circuit are configured to pulse and alternately pass into respectively described the first vapor reaction source and described the second vapor reaction source to described vacuum reaction chamber, and described ICP excites unit to be configured to adopt the pulse working mode of synchronizeing with described the first gas circuit.
8. according to the epitaxial growth device of the compound semiconductor based on ICP described in claim 1-6, it is characterized in that, described vacuum reaction chamber comprises the first chamber and the second chamber that are isolated from each other, wherein, described the first chamber is connected with described the first gas circuit, described the second chamber is connected with described the second gas circuit, described sample table is constructed to do between described the first chamber and the second chamber periodically mobile, so that described sample table alternately contacts described the first vapor reaction source and described the second vapor reaction source.
9. according to the epitaxial growth device of the compound semiconductor based on ICP described in claim 1-8, it is characterized in that, described sample table is configured to lifting in the vertical direction.
10. according to the epitaxial growth device of the compound semiconductor based on ICP described in claim 1-8, it is characterized in that, described the first vapor reaction source is NH
3, N
2, C
3h
8, SiH
4or H
2the combination of one or more in O.
11. according to the epitaxial growth device of the compound semiconductor based on ICP described in claim 1-8, it is characterized in that, described the second vapor reaction source is Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Zn (CH
3)
3or Si (CH
3)
4in one or more combination.
The epitaxial growth method of 12. 1 kinds of compound semiconductors based on ICP, is characterized in that, comprises the following steps:
Substrate is placed in the sample table of bottom of vacuum reaction chamber;
Pass into respectively the first vapor reaction source and the second vapor reaction source to described vacuum reaction chamber;
Adopt the mode of electro-induction coupling activated plasma ICP that described the first vapor reaction source and the ionization of the second vapor reaction source are decomposed, and heat described substrate to preset temp so that described the first vapor reaction source and the second vapor reaction source thermo-cracking are carried out epitaxy;
Described substrate is taken out from described vacuum reaction chamber.
The epitaxial growth method of 13. compound semiconductors based on ICP according to claim 12, it is characterized in that, the chemical bond in described the first vapor reaction source is better than the chemical bond in described the second vapor reaction source, described the first vapor reaction source mainly ionizes decomposition by ICP mode, and described the second vapor reaction source is mainly by type of heating thermo-cracking.
The epitaxial growth method of 14. compound semiconductors based on ICP according to claim 12, it is characterized in that, ionization dissociating product to described the first vapor reaction source carries out spatial separation operation, be filtering positive ion and high energy neutral particle, allow low energy active particle to reach described substrate surface and react to carry out epitaxy with the thermal cracking products in described the second vapor reaction source.
The epitaxial growth method of 15. compound semiconductors based on ICP according to claim 12, it is characterized in that, ionization dissociating product to described the first vapor reaction source carries out spatial separation operation, positive ion and the high energy neutral particle decay of leaving, allows unbated low energy active particle to reach described substrate surface and reacts to carry out epitaxy with the thermal cracking products in described the second vapor reaction source.
16. according to the epitaxial growth method of the compound semiconductor based on ICP described in claim 12-15, it is characterized in that, pulse alternately passes into respectively described the first vapor reaction source and described the second vapor reaction source to described vacuum reaction chamber, and also carries out electro-induction coupling when passing into described the first vapor reaction source and excite.
17. according to the epitaxial growth method of the compound semiconductor based on ICP described in claim 12-15, it is characterized in that, also comprises:
Described vacuum reaction chamber is spatially divided into the first chamber and the second chamber, continue respectively to pass into described the first vapor reaction source and the second vapor reaction source, and described sample table is done between described the first chamber and the second chamber periodically and moved, so that described sample table alternately contacts described the first vapor reaction source and described the second vapor reaction source.
18. according to the epitaxial growth method of the compound semiconductor based on ICP described in claim 12-17, it is characterized in that, described sample table is configured to lifting in the vertical direction.
19. according to the epitaxial growth method of the compound semiconductor based on ICP described in claim 12-17, it is characterized in that, described the first vapor reaction source is NH
3, N
2, C
3h
8, SiH
4or H
2the combination of one or more in O.
20. according to the epitaxial growth method of the compound semiconductor based on ICP described in claim 12-17, it is characterized in that, described the second vapor reaction source is Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Zn (CH
3)
3or Si (CH
3)
4in one or more combination.
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| CN105648523A (en) * | 2016-03-02 | 2016-06-08 | 清华大学 | Epitaxial growth device of plasma enhanced atom adsorbed compound semiconductor |
| CN107675141A (en) * | 2017-10-25 | 2018-02-09 | 南昌大学 | A kind of device for being used to prepare nitride material |
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