CN103794660A - Solar-energy cell and manufacturing method thereof - Google Patents
Solar-energy cell and manufacturing method thereof Download PDFInfo
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- CN103794660A CN103794660A CN201210435824.2A CN201210435824A CN103794660A CN 103794660 A CN103794660 A CN 103794660A CN 201210435824 A CN201210435824 A CN 201210435824A CN 103794660 A CN103794660 A CN 103794660A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052802 copper Inorganic materials 0.000 claims abstract description 36
- 239000010949 copper Substances 0.000 claims abstract description 36
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 30
- 238000000059 patterning Methods 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910021332 silicide Inorganic materials 0.000 claims description 22
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 238000005240 physical vapour deposition Methods 0.000 claims description 18
- 238000007747 plating Methods 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 229910017052 cobalt Inorganic materials 0.000 claims description 10
- 239000010941 cobalt Substances 0.000 claims description 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000007772 electrode material Substances 0.000 description 6
- 238000010422 painting Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar-energy cell and a manufacturing method thereof. The method includes the following steps: providing a solar-energy cell substrate; forming a patterned mask layer which exposes part of the solar-energy cell substrate, on the solar-energy cell substrate; forming a front-face electrode on part of the solar-energy cell substrate, exposed by the patterned mask layer; forming a coverage layer which covers the front-face electrode; removing the patterned mask layer; and forming a back-face electrode on the solar-energy cell substrate. The front-face electrode and the back-face electrode are formed on two opposite surfaces of the solar-energy cell substrate respectively. The formation method of the front-face electrode is: firstly forming a seed layer on part of the solar-energy cell substrate, exposed by the patterned mask layer; and then forming a copper layer on the seed layer.
Description
Technical field
The invention relates to a kind of photoelectric cell and preparation method thereof, and relate to a kind of solar cell and preparation method thereof especially.
Background technology
Due to fossil energy shortage, people improve the cognition of environmental protection importance, therefore people constantly actively research and develop the correlation technique of alternative energy source and the renewable energy resources in recent years, the impact that hope brings environment when can reducing the current mankind for the degree of dependence of fossil energy and using fossil energy.In the technology of numerous alternative energy sources and the renewable energy resources, attract most attention with solar cell.Be mainly because solar cell can directly convert solar energy to electric energy, and can not produce the material such as carbon dioxide or nitride in power generation process, therefore can not cause the problem of environmental pollution.
In the processing procedure of general solar cell, normally utilize the mode of screen painting (screen printing) elargol to be coated on substrate and then carry out hot setting processing and form electrode.But, in the process of carrying out screen painting, often need to expend a large amount of elargol.Because silver has higher price, therefore above-mentioned method has increased the production cost of solar cell.In addition,, in order to improve the efficiency of solar cell, the silver electrode forming in the above described manner must have thinner size.But, in the process of hot setting processing, often cause thin silver electrode broken string or discontinuous.In addition, utilize silver electrode that screen painting forms to be generally to have hole the structure of (porous), it has caused the raising of resistance, thereby affects the efficiency of solar cell.
Summary of the invention
The invention provides a kind of solar cell and preparation method thereof.
The invention provides a kind of solar cell, it has efficiency preferably and lower production cost.
The invention provides a kind of manufacture method of solar cell, it can make the solar cell with efficiency preferably and lower production cost.
The invention provides a kind of solar cell, it comprises solar cell substrate, front electrode, cover layer and backplate.Front electrode is disposed at respectively on relative two surfaces of solar cell substrate with backplate.Front electrode comprises Seed Layer and copper layer.Seed Layer is disposed on solar cell substrate.Copper layer is disposed in Seed Layer.Cover layer is coated front electrode.
According to the solar cell described in the embodiment of the present invention, the material of above-mentioned Seed Layer is for example metal or metal silicide.
According to the solar cell described in the embodiment of the present invention, above-mentioned metal is for example silver, nickel, titanium, palladium or cobalt.
According to the solar cell described in the embodiment of the present invention, above-mentioned metal silicide is for example nickle silicide, titanium silicide or cobalt silicide.
According to the solar cell described in the embodiment of the present invention, the thickness of above-mentioned Seed Layer is for example between between 0.05um to 10um.
According to the solar cell described in the embodiment of the present invention, the thickness of above-mentioned copper layer is for example between between 1um to 10um.
According to the solar cell described in the embodiment of the present invention, above-mentioned tectal material is for example nickel, silver or tin.
According to the solar cell described in the embodiment of the present invention, the material of above-mentioned backplate is for example silver, copper, nickel, aluminium, titanium or chromium.
According to the solar cell described in the embodiment of the present invention, the structure example of above-mentioned backplate is as identical with the structure of front electrode.
The present invention separately provides a kind of manufacture method of solar cell, and the method comprises the following steps: solar cell substrate is provided; On solar cell substrate, form patterning cover curtain layer; Patterning cover curtain layer exposes part solar cell substrate.On the part solar cell substrate exposing in patterning cover curtain layer, form front electrode; Form the cover layer of coated front electrode; Remove patterning cover curtain layer; And on solar cell substrate, form backplate, wherein front electrode is formed at respectively on relative two surfaces of solar cell substrate with backplate.The formation method of front electrode is to form Seed Layer on the part solar cell substrate exposing prior to patterning cover curtain layer.Then, in Seed Layer, form copper layer.
According to the manufacture method of the solar cell described in the embodiment of the present invention, the material of above-mentioned Seed Layer is for example metal or metal silicide.
According to the manufacture method of the solar cell described in the embodiment of the present invention, above-mentioned metal is for example silver, nickel, titanium, palladium or cobalt.
According to the manufacture method of the solar cell described in the embodiment of the present invention, above-mentioned metal silicide is for example nickle silicide, titanium silicide or cobalt silicide.
According to the manufacture method of the solar cell described in the embodiment of the present invention, the thickness of above-mentioned Seed Layer is for example between between 0.05um to 10um.
According to the manufacture method of the solar cell described in the embodiment of the present invention, the formation method of above-mentioned Seed Layer is for example plating, chemical plating, physical vapour deposition (PVD) or chemical vapour deposition (CVD).
According to the manufacture method of the solar cell described in the embodiment of the present invention, the formation method of above-mentioned copper layer is for example plating, chemical plating, physical vapour deposition (PVD) or chemical vapour deposition (CVD).
According to the manufacture method of the solar cell described in the embodiment of the present invention, the thickness of above-mentioned copper layer is for example between between 1um to 10um.
According to the manufacture method of the solar cell described in the embodiment of the present invention, above-mentioned tectal formation method is for example plating, chemical plating, physical vapour deposition (PVD) or chemical vapour deposition (CVD).
According to the manufacture method of the solar cell described in the embodiment of the present invention, the above-mentioned step that removes patterning cover curtain layer is for example carried out after forming tectal step.
According to the manufacture method of the solar cell described in the embodiment of the present invention, the above-mentioned step that removes patterning cover curtain layer is carried out between the step of formation Seed Layer and the step of formation copper layer.
According to the manufacture method of the solar cell described in the embodiment of the present invention, the formation method of above-mentioned backplate is for example identical with the formation method of front electrode.
Based on above-mentioned, the present invention, before forming electrode, first utilizes patterning cover curtain layer to define and will form the region of electrode, and then form electrode in this region.Therefore, compared with utilizing the mode of screen painting coating electrode material, the electrode that the present invention forms can have thinner width, to increase the efficiency of solar cell, and need after forming electrode, not carry out the high-temperature process in order to solidify electrode material.In addition, in electrode of the present invention, there is copper layer, therefore can effectively reduce the resistance of electrode to improve the efficiency of solar cell, and reduce the production cost of solar cell.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below.
Accompanying drawing explanation
Figure 1A to Fig. 1 D is the making flow process generalized section according to the shown solar cell of first embodiment of the invention;
Fig. 2 A to Fig. 2 D is the making flow process generalized section according to the shown solar cell of second embodiment of the invention.
Description of reference numerals:
10,20: solar cell;
100,200: solar cell substrate;
102,202: silicon substrate;
102a, 202a: front;
102b, 202b: the back side;
104: emitter-base bandgap grading;
106: anti-reflecting layer;
108: patterning cover curtain layer;
110: Seed Layer;
112: copper layer;
114: front electrode;
116,120: cover layer;
118: backplate;
204: the first amorphous layers;
206: the first including transparent conducting oxide layers;
208: the second amorphous layers;
210: the second including transparent conducting oxide layers.
Embodiment
Figure 1A to Fig. 1 D is the making flow process generalized section according to the shown solar cell of first embodiment of the invention.First, please refer to Figure 1A, solar cell substrate 100 is provided.In the present embodiment, solar cell substrate 100 comprises silicon substrate 102 and emitter-base bandgap grading 104.Silicon substrate 102 has positive 102a and back side 102b.Emitter-base bandgap grading 104 is disposed on positive 102a.In addition, on solar cell substrate 100, can also be formed with anti-reflecting layer 106, it is positioned on emitter-base bandgap grading 104.The formation method of emitter-base bandgap grading 104 and anti-reflecting layer 106 is well known to those skilled in the art, in this NES.In addition, as well known to the skilled person, silicon substrate 102 can have the surperficial (not shown) of veining (textured).
Then, please refer to Figure 1B, on solar cell substrate 100, form patterning cover curtain layer 108.The formation method of patterning cover curtain layer 108 is for example first to form one deck cover curtain material layer, then utilizes the mode of etching or laser cutting will cover curtain material layer pattern.In the present embodiment, owing to being formed with anti-reflecting layer 106 on solar cell substrate 100, therefore patterning cover curtain layer 108 is formed on anti-reflecting layer 106.Then,, take patterning cover curtain layer 108 as cover curtain, remove and be patterned the anti-reflecting layer 106 that cover curtain layer 108 exposes, to expose part solar cell substrate 100 (exposing part emitter-base bandgap grading 104).Not forming in the embodiment of anti-reflecting layer 106,108 of patterning cover curtain layers are directly formed on emitter-base bandgap grading 104, and do not have the above-mentioned step that is patterned the anti-reflecting layer 106 that cover curtain layer 108 exposes that removes.
Then, please refer to Fig. 1 C, on the emitter-base bandgap grading 104 exposing in patterning cover curtain layer 108, form Seed Layer 110.The Seed Layer of Seed Layer 110 when as follow-up formation copper layer.The material of Seed Layer 110 is for example metal or metal silicide.Above-mentioned metal is for example silver, nickel, titanium, palladium or cobalt, and above-mentioned metal silicide is for example nickle silicide, titanium silicide or cobalt silicide.The thickness of Seed Layer 110 is for example between between 0.05um to 10um.In addition, Seed Layer 110 can be individual layer or sandwich construction.In the present embodiment, take individual layer as example.The formation method of Seed Layer 110 is for example plating, chemical plating (or being called electroless plating (electroless plating)), physical vapour deposition (PVD) or chemical vapour deposition (CVD).Special one carry be, in the time that the material of Seed Layer 110 is metal silicide, its formation method can be also to form metal material layer on the emitter-base bandgap grading 104 exposing prior to patterning cover curtain layer 108, then carry out tempering manufacturing process, metal material layer is reacted with the silicon materials of below and form metal silicide layer.Afterwards, remove patterning cover curtain layer 108.
Afterwards, please refer to Fig. 1 D, in Seed Layer 110, form copper layer 112.The formation method of copper layer 112 is for example plating, chemical plating, physical vapour deposition (PVD) or chemical vapour deposition (CVD).The thickness of copper layer 112 is for example between between 1um to 10um.In the present embodiment, copper layer 112 forms the front electrode 114 in solar cell with Seed Layer 110.In addition, copper layer 112 is the major part of front electrode 110, makes front electrode 110 can have lower resistance, has preferably conductance, therefore can effectively improve the efficiency of solar cell.In addition, because copper has lower price (compared with silver), therefore the front electrode 114 take copper layer 110 as major part has also reduced the production cost of solar cell.Moreover, before forming front electrode 114, first utilize patterning cover curtain layer to define and will form the region of front electrode 114, therefore compared with utilizing the mode of screen painting coating electrode material, the front electrode 114 forming can have thinner width, to increase the efficiency of solar cell, and need after forming front electrode 114, not carry out the high-temperature process in order to solidify electrode material.
Continue referring to Fig. 1 D, form the cover layer 116 of coated front electrode 114.The material of cover layer 116 is for example nickel, silver or tin.The formation method of cover layer 116 is for example plating, chemical plating, physical vapour deposition (PVD) or chemical vapour deposition (CVD).Cover layer 116 produces oxidation in order to avoid copper layer 112 to contact with external environment.In addition, multiple solar cells being connected to form in the process of solar module, cover layer 116 can increase the adhesive force between front electrode 114 and bus (bus bar) in order to be connected multiple front electrodes 114.Then, in the upper backplate 118 that forms of the back side of silicon substrate 102 102b, to complete the making of solar cell 10.Backplate 118 can have back electrode structure well-known to those skilled in the art.Or backplate can have identical structure and similarly form method with front electrode 114.For instance, can on the 102b of the back side, sequentially form patterning cover curtain layer, Seed Layer and copper layer, to form backplate.After forming backplate, form the cover layer of coated backplate.
Special one carries, and in the present embodiment, the step that removes patterning cover curtain layer 108 is carried out between the step of formation Seed Layer 110 and the step of formation copper layer 112.But the present invention is not limited to this.In other embodiments, also can after forming cover layer 116, remove patterning cover curtain layer 108.
In addition, in this enforcement, first form front electrode 114, then form backplate 118.But the present invention is not limited to this.By actual demand, also can first form backplate 118, then form front electrode 114.
Fig. 2 A to Fig. 2 D is the making flow process generalized section according to the shown solar cell of second embodiment of the invention.In the present embodiment, the element identical with the first embodiment will represent with identical label.First, please refer to Fig. 2 A, solar cell substrate 200 is provided.In the present embodiment, solar cell substrate 200 comprises silicon substrate 202, the first amorphous layer (amorphous layer) 204, the first including transparent conducting oxide layer 206, the second amorphous layer 208 and the second including transparent conducting oxide layer 210.Silicon substrate 202 has positive 202a and back side 202b.The first amorphous layer 204 is disposed on positive 202a.The first including transparent conducting oxide layer 206 is disposed on the first amorphous layer 204.The second amorphous layer 208 is disposed on the 202b of the back side.The second including transparent conducting oxide layer 210 is disposed on the second amorphous layer 208.The formation method of the first amorphous layer 204, the first including transparent conducting oxide layer 206, the second amorphous layer 208 and the second including transparent conducting oxide layer 210 is well known to those skilled in the art, in this NES.In addition, as well known to the skilled person, silicon substrate 202 can have texturizing surfaces (not shown).
Then, please refer to Fig. 2 B, respectively at forming patterning cover curtain layer 108 on the first including transparent conducting oxide layer 206 and the second including transparent conducting oxide layer 210.
Then, please refer to Fig. 2 C, on the first including transparent conducting oxide layer 206 exposing in patterning cover curtain layer 108 and the second including transparent conducting oxide layer 210, form Seed Layer 110.The Seed Layer of Seed Layer 110 when as follow-up formation copper layer.In addition, Seed Layer 110 can be individual layer or sandwich construction.In the present embodiment, take individual layer as example.
Afterwards, please refer to Fig. 2 D, in Seed Layer 110, form copper layer 112.In the present embodiment, copper layer 112 and the Seed Layer 110 of contiguous positive 202a form the front electrode 114 in solar cell, and copper layer 112 and the Seed Layer 110 of contiguous back side 202b form the backplate 118 in solar cell.Because copper layer 112 is the major part of front electrode 110 and backplate 118, make front electrode 110 and backplate 118 can there is lower resistance, there is preferably conductance, therefore can effectively improve the efficiency of solar cell.In addition, because copper has lower price (compared with silver), therefore the front electrode 114 take copper layer 110 as major part and backplate 118 have also reduced the production cost of solar cell.Moreover, before forming front electrode 114 and backplate 118, first utilize patterning cover curtain layer to define and will form the region of front electrode 114 with backplate 118, therefore compared with utilizing the mode of screen painting coating electrode material, the front electrode 114 and the backplate 118 that form can have thinner width, to increase the efficiency of solar cell, and need after forming front electrode 114 and backplate 118, not carry out the high-temperature process in order to solidify electrode material.
Continue referring to Fig. 2 D, form the coated cover layer 116 of front electrode 114 and the cover layer 120 of coated backplate 118, to complete the making of solar cell 20.Material, formation method and the function of cover layer 120 are identical with cover layer 116, in this NES.
In the present embodiment, backplate 118 has identical structure and formation method with front electrode 114, and the two forms in identical fabrication steps.But the present invention is not limited to this.In other embodiments, backplate 118 also can have back electrode structure well-known to those skilled in the art.In addition,, by actual demand, also can first form front electrode 114, then form backplate 118; Or first form backplate 118, then form front electrode 114.
Finally it should be noted that: above each embodiment, only in order to technical scheme of the present invention to be described, is not intended to limit; Although the present invention is had been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or some or all of technical characterictic is wherein equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (21)
1. a solar cell, is characterized in that, comprising:
Solar cell substrate;
Front electrode, is disposed on described solar cell substrate, and described front electrode comprises:
Seed Layer, is disposed on described solar cell substrate; And
Copper layer, is disposed in described Seed Layer;
Cover layer, coated described front electrode; And
Backplate, is disposed on described solar cell substrate, and wherein said front electrode is disposed at respectively on relative two surfaces of described solar cell substrate with described backplate.
2. solar cell according to claim 1, is characterized in that, the material of described Seed Layer comprises metal or metal silicide.
3. solar cell according to claim 2, is characterized in that, described metal comprises silver, nickel, titanium, palladium or cobalt.
4. solar cell according to claim 2, is characterized in that, described metal silicide comprises nickle silicide, titanium silicide or cobalt silicide.
5. solar cell according to claim 1, is characterized in that, the thickness of described Seed Layer is between between 0.05um to 10um.
6. solar cell according to claim 1, is characterized in that, the thickness of described copper layer is between between 1um to 10um.
7. solar cell according to claim 1, is characterized in that, described tectal material comprises nickel, silver or tin.
8. solar cell according to claim 1, is characterized in that, the material of described backplate comprises silver, copper, nickel, aluminium, titanium or chromium.
9. solar cell according to claim 1, is characterized in that, the structure of described backplate is identical with the structure of described front electrode.
10. a manufacture method for solar cell, is characterized in that, comprising:
Solar cell substrate is provided;
On described solar cell substrate, form patterning cover curtain layer, described patterning cover curtain layer exposes the described solar cell substrate of part;
On the described solar cell substrate of part exposing in described patterning cover curtain layer, form front electrode, the formation method of described front electrode comprises:
On the described solar cell substrate of part exposing in described patterning cover curtain layer, form Seed Layer; And
In described Seed Layer, form copper layer;
Form the cover layer of coated described front electrode;
Remove described patterning cover curtain layer; And
On described solar cell substrate, form backplate, wherein said front electrode is formed at respectively on relative two surfaces of described solar cell substrate with described backplate.
The manufacture method of 11. solar cells according to claim 10, is characterized in that, the material of described Seed Layer comprises metal or metal silicide.
The manufacture method of 12. solar cells according to claim 11, is characterized in that, described metal comprises silver, nickel, palladium, titanium or cobalt.
The manufacture method of 13. solar cells according to claim 11, is characterized in that, described metal silicide comprises nickle silicide, titanium silicide or cobalt silicide.
The manufacture method of 14. solar cells according to claim 10, is characterized in that, the thickness of described Seed Layer is between between 0.05um to 10um.
The manufacture method of 15. solar cells according to claim 10, is characterized in that, the formation method of described Seed Layer comprises plating, chemical plating, physical vapour deposition (PVD) or chemical vapour deposition (CVD).
The manufacture method of 16. solar cells according to claim 10, is characterized in that, the formation method of described copper layer comprises plating, chemical plating, physical vapour deposition (PVD) or chemical vapour deposition (CVD).
The manufacture method of 17. solar cells according to claim 10, is characterized in that, the thickness of described copper layer is between between 1um to 10um.
The manufacture method of 18. solar cells according to claim 10, is characterized in that, described tectal formation method comprises plating, chemical plating, physical vapour deposition (PVD) or chemical vapour deposition (CVD).
The manufacture method of 19. solar cells according to claim 10, is characterized in that, the step that removes described patterning cover curtain layer is carried out after forming described tectal step.
The manufacture method of 20. solar cells according to claim 10, is characterized in that, the step that removes described patterning cover curtain layer is carried out between the step of the described Seed Layer of formation and the step of the described copper layer of formation.
The manufacture method of 21. solar cells according to claim 10, is characterized in that, the formation method of described backplate is identical with the formation method of described front electrode.
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| CN201210435824.2A CN103794660A (en) | 2012-11-05 | 2012-11-05 | Solar-energy cell and manufacturing method thereof |
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| CN201210435824.2A CN103794660A (en) | 2012-11-05 | 2012-11-05 | Solar-energy cell and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895713A (en) * | 2016-06-17 | 2016-08-24 | 新奥光伏能源有限公司 | Silicon heterojunction solar cell and fabrication method thereof |
| CN108123010A (en) * | 2016-11-29 | 2018-06-05 | 茂迪股份有限公司 | Solar cell and method for manufacturing same |
| TWI637431B (en) * | 2015-11-16 | 2018-10-01 | 艾格生科技股份有限公司 | Backside metallization process |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090239331A1 (en) * | 2008-03-24 | 2009-09-24 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
| CN101568670A (en) * | 2006-12-01 | 2009-10-28 | 应用材料股份有限公司 | Apparatus and method for electroplating on a solar cell substrate |
| US20090311825A1 (en) * | 2008-06-13 | 2009-12-17 | Andreas Krause | Metallization method for solar cells |
| US20110272009A1 (en) * | 2010-05-07 | 2011-11-10 | International Business Machines Corporation | Method and structure of photovoltaic grid stacks by solution based processes |
| CN102403371A (en) * | 2010-09-10 | 2012-04-04 | 赛昂电力有限公司 | Solar cell with electroplated metal grid |
-
2012
- 2012-11-05 CN CN201210435824.2A patent/CN103794660A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101568670A (en) * | 2006-12-01 | 2009-10-28 | 应用材料股份有限公司 | Apparatus and method for electroplating on a solar cell substrate |
| US20090239331A1 (en) * | 2008-03-24 | 2009-09-24 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
| EP2105969A2 (en) * | 2008-03-24 | 2009-09-30 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
| US20090311825A1 (en) * | 2008-06-13 | 2009-12-17 | Andreas Krause | Metallization method for solar cells |
| US20110272009A1 (en) * | 2010-05-07 | 2011-11-10 | International Business Machines Corporation | Method and structure of photovoltaic grid stacks by solution based processes |
| CN102403371A (en) * | 2010-09-10 | 2012-04-04 | 赛昂电力有限公司 | Solar cell with electroplated metal grid |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI637431B (en) * | 2015-11-16 | 2018-10-01 | 艾格生科技股份有限公司 | Backside metallization process |
| CN105895713A (en) * | 2016-06-17 | 2016-08-24 | 新奥光伏能源有限公司 | Silicon heterojunction solar cell and fabrication method thereof |
| CN105895713B (en) * | 2016-06-17 | 2018-03-30 | 新奥光伏能源有限公司 | A kind of silicon heterogenous solar cell and preparation method thereof |
| CN108123010A (en) * | 2016-11-29 | 2018-06-05 | 茂迪股份有限公司 | Solar cell and method for manufacturing same |
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