CN103794454B - Beam uniformity adjusting device - Google Patents
Beam uniformity adjusting device Download PDFInfo
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- CN103794454B CN103794454B CN201310415418.4A CN201310415418A CN103794454B CN 103794454 B CN103794454 B CN 103794454B CN 201310415418 A CN201310415418 A CN 201310415418A CN 103794454 B CN103794454 B CN 103794454B
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Abstract
The invention discloses a beam uniformity adjusting device, which comprises: the wire harness structure comprises a wire harness channel (1), an electrode cavity (2), an electrode cover plate (3), a lead mounting flange (4), a lead protective cover (5), a lead seat (6), short electrodes (7) and long electrodes (8), wherein the wire harness structure comprises 19 groups of short electrodes (7) on the upper side, 17 groups of short electrodes (7) on the lower side and 2 groups of long electrodes (8), and the arrangement positions of the upper and lower electrodes are symmetrical to the central plane of the wire harness channel (1); the electrodes with symmetrical positions at the upper side and the lower side are powered by the same power supply; the total number of 19 power supplies are used for supplying power independently, and different electric field distributions are generated in the beam line channel (1) by adjusting the voltage of the electrodes, so that the purposes of changing the beam passing path and adjusting the particle distribution are achieved. The invention relates to an ion implantation device, belonging to the field of semiconductor manufacturing.
Description
Technical field
The present invention relates to a kind of semiconductor device manufacturing control system, i.e. implanter, especially, relate to a kind of beam homogeneity for ion implantation apparatus and regulate device。
Background technology
Along with the development of semiconductor technology, the uniformity of line and stability are for ion implant systems ever more important, the industrialization of the quality injecting product and ion implantation apparatus there is very big impact。If ion implantation apparatus beam-out energy is very low, the particularly occasion of big line, transmission path length, due to the impact of space charge effect, divergence of ion beam is serious, and its efficiency of transmission is extremely low so that finally arrive the line injecting wafer little, bundle poor quality, it is impossible to meet injection technology requirement；The control of ion beam current uniformity and stability has special meaning for the transmission of ultra-low energy large beam ion bundle。
Excellent homogeneity is the basis finally giving high-quality product, at present for the urgent needs controlling to require to have become industry development of ion source educt beaming flow uniformity。
Summary of the invention
The invention discloses the device that a kind of beam homogeneity regulates, can be used for ion implantation machine system；It restraints inferior phenomenon for existing beam divergence, acquisition, deviate to some extent even for the transmission of ultra-low energy line, extraction electrode or transmitting device position, transmit beam homogeneity problem produced by the situation that path is long, can both well solve, without the product quality of final ion implanting is produced impact。
The present invention is achieved through the following technical solutions:
1. a beam homogeneity regulates device; including: bunch passage (1), electrode chamber (2), electric lids (3), lead-in wire mounting flange (4), pilot protection cover (5), wire holder (6), noncontinuous electrode (7), long electrode (8), it is characterised in that: regulate that device is symmetrical above and below is arranged in beam channel (1) both sides。
2. a kind of beam homogeneity as claimed in claim 1 regulates device, it is characterised in that: 19 groups of noncontinuous electrodes (7) of layout symmetrical above and below and long electrode (8), often group electrode presses certain angle, range distribution。
3. a kind of beam homogeneity as claimed in claim 1 regulates device, it is characterised in that: 19 groups of noncontinuous electrodes (7) of layout symmetrical above and below and long electrode (8), 19 power supplys individually power。
4. a kind of beam homogeneity as claimed in claim 1 regulates device, it is characterised in that: one group of electrode of layout symmetrical above and below is powered by same power supply；The forms such as this power supply mode can optionally be connected in parallel, independent current source individually power supply。
5. a kind of beam homogeneity as claimed in claim 1 regulates device, it is characterised in that: 19 groups of multi-electrodes of layout symmetrical above and below are applied directly to line both sides, by electrode chamber (2), electric lids (3) location and installation。
6. a kind of beam homogeneity as claimed in claim 1 regulates device, it is characterised in that: 19 groups of multielectrode lead-in wires of layout symmetrical above and below are made up of pilot protection cover (5), wire holder (6)；This power supply mode can optionally other wire holder form complete to power up, seal and insulation protection。
The present invention has following remarkable advantage:
1. simple in construction, layout symmetrical above and below, it is easy to processing and manufacturing。
2. function is reliable: 19 pairs of electrodes are directly symmetrically arranged in line both sides, individually power, and produces different Electric Field Distribution, it is ensured that the uniformity of bunch light path regulates。
3. easily controllable: layout symmetrical above and below 19, to electrode, is powered by 19 power supplys respectively。
Accompanying drawing explanation
Fig. 1 multi-electrode regulator system figure
Fig. 2 multi-electrode adjustor structure chart
Fig. 3 multi-electrode adjustor distribution of electrodes
Detailed description of the invention
Below in conjunction with accompanying drawing 1, accompanying drawing 2 and accompanying drawing 3, the present invention is further introduced, but not as a limitation of the invention。
Referring to Fig. 1, Fig. 2 and Fig. 3, a kind of beam homogeneity regulates device and divides upper and lower two parts, is arranged symmetrically in bunch passage (1) both sides；Upper and lower part includes 2 electrode chambers (2), 2 electric lids (3) and lead-in wire mounting flange (4), 12 pilot protection covers (5) and wire holder (6), 36 noncontinuous electrodes (7), 2 long electrodes (8) altogether；Two long electrodes are distributed in both sides, and the installation site of electrode is symmetrical above and below；Noncontinuous electrode (7) and long electrode (8), by certain angle and range distribution, are arranged in electrode chamber (2) and electric lids (3)；Electric lids (3) is provided with lead-in wire mounting flange (4), facilitates the installation of wire holder (6), ensures the sealing at lead-in wire place to be provided with pilot protection cover (5) outside wire holder (6), it is ensured that insulation。
Electrode at same position is a pair up and down, same power supply power；19 power supplys independently control, voltage+3000V～-3000V continuously adjustabe。When ion beam stream is when bunch passage (1), the voltage status of 19 groups of electrodes is regulated respectively by power supply, change line to be distributed by the internal field in region, adjust the operation angle of particle flux localized particle, it is achieved on width, the uniformity of line regulates。
In this embodiment, regulating that device is symmetrical above and below is arranged in bunch passage (1) both sides, this arrangement form can substitute。
In this embodiment, multielectrode quantity is alternative, such as 16 pairs, 25 equities；Its spatial distribution location parameter is changeable, and distribution angle, distance are optional；As long as allowing up to the effect of required adjustment。
In this embodiment, multielectrode connection and power supply mode can be substituted by alternate manner, such as power parameter, power supply number and power supply regulative mode etc.。
In this embodiment, noncontinuous electrode (7) and long electrode (8) are played install the electrode chamber (2) of positioning action, electric lids (3) form alternative, the effect of location can be played。
In this embodiment, the lead-in wire form being made up of lead-in wire mounting flange (4), pilot protection cover (5) and wire holder (6) is alternative, can play lead-in wire, safety, sealing, act on reliably。
The content of patent of the present invention is elaborated by the specific embodiment of patent of the present invention。For persons skilled in the art, any apparent change under the premise without departing substantially from patent spirit of the present invention, it done, all constitute the infringement to patent of the present invention, corresponding legal responsibility will be undertaken。
Claims (5)
1. beam homogeneity regulates a device, point upper and lower two parts, is arranged symmetrically in beam channel (1) both sides；Upper and lower part includes electrode chamber (2), electric lids (3), lead-in wire mounting flange (4), pilot protection cover (5) and wire holder (6), noncontinuous electrode (7) respectively；Upper and lower part shares two long electrodes (8)；Two long electrodes are distributed in both sides, and the installation site of electrode is symmetrical above and below；Being arranged symmetrically with 36 noncontinuous electrodes (7) up and down altogether and share 2 long electrodes (8), often group electrode presses certain angle, range distribution, and long and short distribution of electrodes is orderly。
2. a kind of beam homogeneity as claimed in claim 1 regulates device, it is characterised in that: 36 noncontinuous electrodes (7) of layout symmetrical above and below and shared 2 long electrodes (8), 19 power supplys individually power。
3. a kind of beam homogeneity as claimed in claim 1 regulates device, it is characterised in that: one group of electrode of layout symmetrical above and below is powered by same power supply；This power supply mode can optionally be connected in parallel, independent current source is individually powered。
4. a kind of beam homogeneity as claimed in claim 1 regulates device, it is characterized in that: 36 noncontinuous electrodes (7) of layout symmetrical above and below and shared 2 long electrodes (8) are applied directly to line both sides, by electrode chamber (2), electric lids (3) location and installation。
5. a kind of beam homogeneity as claimed in claim 1 regulates device, it is characterised in that: the lead-in wire of 36 noncontinuous electrodes (7) of layout symmetrical above and below and shared 2 long electrodes (8) is made up of pilot protection cover (5), wire holder (6)。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310415418.4A CN103794454B (en) | 2013-09-12 | 2013-09-12 | Beam uniformity adjusting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310415418.4A CN103794454B (en) | 2013-09-12 | 2013-09-12 | Beam uniformity adjusting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103794454A CN103794454A (en) | 2014-05-14 |
| CN103794454B true CN103794454B (en) | 2016-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310415418.4A Active CN103794454B (en) | 2013-09-12 | 2013-09-12 | Beam uniformity adjusting device |
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| Country | Link |
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| CN (1) | CN103794454B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201081B (en) * | 2014-09-17 | 2016-05-18 | 北京中科信电子装备有限公司 | A kind of wide beam ion implantation apparatus uniformity adjusting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6403452B1 (en) * | 1999-02-22 | 2002-06-11 | Kabushiki Kaisha Toshiba | Ion implantation method and ion implantation equipment |
| CN103094032A (en) * | 2011-11-07 | 2013-05-08 | 北京中科信电子装备有限公司 | Multi-electrode beam focusing adjusting device and method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3362525B2 (en) * | 1994-09-26 | 2003-01-07 | 日新電機株式会社 | Ion implanter |
| JP2008305666A (en) * | 2007-06-07 | 2008-12-18 | Nissin Ion Equipment Co Ltd | Ion implanting device |
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2013
- 2013-09-12 CN CN201310415418.4A patent/CN103794454B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6403452B1 (en) * | 1999-02-22 | 2002-06-11 | Kabushiki Kaisha Toshiba | Ion implantation method and ion implantation equipment |
| CN103094032A (en) * | 2011-11-07 | 2013-05-08 | 北京中科信电子装备有限公司 | Multi-electrode beam focusing adjusting device and method |
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| CN103794454A (en) | 2014-05-14 |
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Effective date of registration: 20220426 Address after: 101111 1st floor, building 1, 6 Xingguang 2nd Street, Tongzhou District, Beijing Patentee after: Beijing Scintillation Section Zhongkexin Electronic Equipment Co.,Ltd. Address before: No.6, Xingguang 2nd Street, optical Mechatronics industrial base, Tongzhou District, Beijing Patentee before: BEIJING ZHONGKEXIN ELECTRONICS EQUIPMENT Co.,Ltd. |