CN103789734A - Method for realizing wide nano-particle beams by using neutral cluster beam nozzle assembly - Google Patents
Method for realizing wide nano-particle beams by using neutral cluster beam nozzle assembly Download PDFInfo
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- CN103789734A CN103789734A CN201410038796.XA CN201410038796A CN103789734A CN 103789734 A CN103789734 A CN 103789734A CN 201410038796 A CN201410038796 A CN 201410038796A CN 103789734 A CN103789734 A CN 103789734A
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Abstract
The invention provides a method for realizing wide nano-particle beams by using a neutral cluster beam nozzle assembly. The beam nozzle assembly is realized by using a beam clustering plate, namely an integrated beam gun, wherein the beam clustering plate is divided into two layers, the first layer comprises a plurality of nozzles of the integrated beam gun, the second layer comprises separators which are in one-to-one correspondence with the nozzles, the axes of the separators and the nozzles are on the same axis, and the distance between the two layers is in the range of 0.5cm to 5cm. The structure of the neutral clustering beam nozzle assembly can be used for nanometer fabrication of the nano-particle beams with relatively large areas and relatively high flux and realization of the relatively large-area nanometer spraying. The wide nano-particle beams with high particle flux realized by means of the structure are beneficial to increasing of yield in unit time when cluster beams are used for carrying out surface nanometer fabrication, reduction of energy consumption and improvement of efficiency, so that the unit cost of nanometer fabrication is effectively reduced.
Description
Technical field
The invention belongs to nanometer and manufacture field, specifically, relate to a kind of technique of utilizing particle beam stream to carry out large-scale nano processing, can realize the nanometer processing of expecting size and shape, for even nano-textile field of nano-deposit.
Background technology
Nano structural material is because undersized finely regulating, brand-new physics and chemistry character become the study hotspot in current advanced material field, is also one of focus of paying close attention in material engineering in recent years.Nanometer manufacture refers to by methods such as mechanics, physics, chemistry, biology, Materials science and realizes the controlled processing of nano-scale structure and the controlled preparation of associated materials and device, and is concerned about processing under nanoscale and nano-precision, shaping, modification and manufactures etc. across yardstick.So nanometer manufacturing process is the key of current Development of Nano-technology.
The present invention will introduce a kind of method that produces the neutral nano particle line of big area, and this method is mainly risen in the Cluster Beam source of eighties of last century the seventies and eighties development in atom and molecule research.So-called elementide, comprises several stable aggregates to a lot of atoms exactly
1-2, Cluster Beam source is exactly the device that produces elementide and form flight Cluster Beam.Early stage elementide study limitation is at several or tens atoms
3-5, this had once caused C at the end of the eighties
60discovery, the famous Smalley of Nobel chemistry Prize winner carries out the work on Cluster Beam source.In traditional Cluster Beam source, first utilize solid or fluent material produce atomic vapour and this steam is entered to high vacuum end by minimum spray orifice, utilize multistage spray orifice centering to produce the elementide line of collimation.Its principal character is that vapor phase growth, difference are bled and the multistage centering of neutral line.Initial Cluster Beam is mainly used in the research of atomic and molecular physics, for generation of Na
13, Au
20deng the elementide containing dozens of atom
3-5.Along this thinking, the main improvement of Cluster Beam method for generation is to produce the method (heating, laser ablation) of steam
6-9, designs of nozzles (size and pressure reduction), atomicity rank beam component select (pulse choice, magnetic deflection)
10-11, line ionization and high energy accelerates
8,12-15and relevant quantum regulation and control means (imprison, laser manipulate)
16.The newest fruits of report in 2008 is verified, and M/ Δ M selects up to 20 beam component.
Elementide beam source also can be used for producing nano particle line.The size of nano particle is generally at 2-50nm, comprise atomicity at thousands of even millions of, so nano particle is larger sized elementide namely, traditional elementide beam source is carried out to structure of modification and parameter adjustment and just can be used for producing and comprise the more nano particle of polyatom number, Cluster Beam source also just becomes nano particle beam source (being also nanocluster beam source).Along with the concern of nanosecond science and technology with develop in depth and breadth, near nineteen ninety-five, under the pioneers' such as German Haberland seminar promotion, a kind of preparation method of nanostructure is also just developed in Cluster Beam source.There is the linked development of Cluster Beam source for nano particle line in the C.Binns seminar of H.Haberland seminar of Germany, Britain, R.Palmer seminar, gondola P.Milani seminar etc.Wherein, aspect the exploration of applied research, seminar of Germany mainly pays close attention to super smooth minute surface optics film preparation, Binns problem is paid close attention to the preparation of high-density magnetic storage material, the application that Palmer seminar pays close attention to oil catalysis and biochip aspect, and the application outlet of Italian seminar is chosen in the aspects such as ultracapacitor.The seminar of Nanjing University of China is also being explored aspect the preparation of nanometer gradient material, sensor, and applies for national inventing patent some (200610037968.7; 200710021318.8; 200710023415.0; 200810098905.1; 201010514268.9; 201010286912.1).Nowadays, Cluster Beam source starts to seek in many-sided application such as nano-powder preparation, the surface-assembled of multiple nanostructure, high-quality minute surface film, surface etching and cleaning, overlay coating and modification, magnetic nanoscale films and the injections of high energy Cluster Beam.
A typical nanocluster line generating chamber comprises three parts as shown in Figure 1, a material source (sputtering target (1) in figure), the aperture ((2) spray orifice in figure) of a mm in size, and a separator (Fig. 1 (3)).Wherein the diameter of aperture is generally between 0.1 to 2mm, and aperture has certain tapered subtended angle, is approximately 30 degree left and right.The left end (being also air-flow upstream) of aperture has certain high atmospheric pressure, by atomic vapour (can be produced by the sputter) contribution of rare gas element (being injected by tracheae) and material, the right-hand member (being also airflow downstream) of aperture is good vacuum, generally guaranteed by the molecular pump (diffusion pump) of large pumping speed, so the aperture that this difference is bled is the key of nanocluster quality of beam.In addition on the one hand, as shown in Figure 2, when nanocluster line from spray orifice out time line comprise various ingredients: the nanocluster particle that existing quality is larger, also there is the little cluster of very light weight and monatomic, the heavier particle of drift through stretch footpath will keep flying along axis, lighter particle, by the edge of dispersing at line, is now introduced separator (Fig. 1 (3) or Fig. 2 (4)) and just can be chosen required nano particle formation nano particle line for nanometer processing.Can find out: this spray orifice must be very little stable to guarantee that difference is bled, and flying distance must be relatively short, to guarantee that nano particle as much as possible passes through.Consider that line subtended angle is after this very little, the nano particle line area that single spray orifice produces can not be very large.At present, in order to process larger area sample, people just must introduce in line rear end scanning device, make to need the sample of nanometer processing to do position scanning, realize larger area nano-spray.Recent two decades comes, and design and the aerodynamics of the single line rifle of people's Continual Improvement try hard to realize larger line, realize higher nanometer processing efficiency.Under existing conditions, the effort that further improves the nano particle flow of single Cluster Beam rifle has been produced effects gradually micro-.So the design proposes to research and develop the cluster of multiple Cluster Beam rifles, by the small-sized single Cluster Beam source line rifle that turns to, be engaged in the design in geometric distribution, on same cluster source, combine large-area overlapping line formation nano particle line.At present common Cluster Beam rifle diameter is 10 centimeters of left and right, and nanometer bundle flow diameter is generally 1 centimeter after separator.
Reference:
1 Wang Guang is thick. and Cluster Physics is learned. physics, 13 (1995).
2Baletto,F.&Ferrando,R.Structural?properties?of?nanoclusters:Energetic,thermodynamic,and?kinetic?effects.Rev.Mod.Phys.77,371-423(2005).
3Li,J.,Li,X.,Zhai,H.J.&Wang,L.S.Au-20:A?tetrahedral?cluster.Science299,864-867(2003).
4Smalley,R.E.C
60Ups.Abstracts?of?Papers?of?the?American?Chemical?Society198,21-Phys(1989).
5Liu,Y.et?al.Negative?Carbon?Cluster?Ion-Beams-New?Evidence?for?the?Special?Nature?of?C
60.Chemical?Physics?Letters126,215-217(1986).
6Ishii,K.,Amano,K.&Hamakake,H.Hollow?cathode?sputtering?cluster?source?for?low?energy?deposition:Deposition?of?Fe?small?clusters.Journal?of?Vacuum?Science&Technology?a-Vacuum?Surfaces?and?Films17,310-313(1999).
7Nakao,Y.Method?for?the?preparation?of?polymer-metal?cluster?composite?United?States?patent6284387(2001).
8Saito,T.I.-s.,JP),Shoji,T.H.-s.,JP)&Fukumiya,Y.Y.-s.,JP)Gas?cluster?ion?beam?emitting?apparatus?and?method?for?ionization?of?gas?cluster.United?States?patent?United?States?Patent7365341(2008).
9Goldby,I.M.,von?Issendorff,B.,Kuipers,L.&Palmer,R.E.Gas?condensation?source?for?production?and?deposition?of?size-selected?metal?clusters.Review?of?Scientific?Instruments68,3327-3334(1997).
10Baker,S.A.et?al.Review?of?Scientific?Instruments71,3178(2000).
11Pratontep,S.,Carroll,S.J.,Xirouchaki,C.,Streun,M.&Palmer,R.E.Size-selected?cluster?beam?source?based?on?radio?frequency?magnetron?plasma?sputtering?and?gas?condensation.Review?of?Scientific?Instruments76,045103(2005).
12Iwata,Y.et?al.Twenty?kilovolts?massive?ion?beam?system?for?well-defined?microcluster?studies.Nuclear?Instruments&Methods?in?Physics?Research?Section?a-Accelerators?Spectrometers?Detectors?and?Associated?Equipment427,235-241(1999).
13Iwata,Y.,Saito,N.&Tanimoto,M.Mev/U?Cluster?Generation.Nuclear?Instruments?&Methods?in?Physics?Research?Section?B-Beam?Interactions?with?Materials?and?Atoms88,10-15(1994).
14Yamada,I.et?al.Preparation?of?Atomically?Flat?Gold-Films?by?Ionized?Cluster?Beam.Nuclear?Instruments&Methods?in?Physics?Research?Section?B-Beam?Interactions?with?Materials?and?Atoms55,876-879(1991).
15 Zhang Weidong & Qiu founding fathers. obtain MeV high energy cluster ions bundle with swindletron. nuclear technique 23,94 (2000).
16Haberland,H.,Karrais,M.,Mall,M.&Thurner,Y.Thin-Films?from?Energetic?Cluster?Impact-a?Feasibility?Study.J.Vac.Sci.Technol.A10,3266-3271(1992).
Summary of the invention
The object of the invention is to propose a kind ofly build the design of nanocluster line cluster and utilize it to realize the method for wide cut nano particle line, utilize the form of Cluster Beam nozzle (being nanometer spray orifice) forming array or line cluster to form multiple nanocluster particle beam sources, form the nano particle line that can be used for larger area and larger flux nanometer processing.The wide cut nanometer line of high particle flux of realizing whereby will contribute to improve and utilize Cluster Beam to carry out Nanosurface to add unit time in man-hour yield, contribute to reduce energy consumption and raise the efficiency, thereby effectively reduce the unit cost of nanometer processing.
Technical solution of the present invention: a kind of neutral cluster line nozzle cluster is realized the method for wide cut nano particle line, this line nozzle cluster is realized by line cluster plate (being integrated line rifle), line cluster plate is divided into two-layer, the first layer is the nozzle of multiple integrated line rifles, the second layer is separator, separator is corresponding one by one with nozzle, and point-blank, two-layer spacing is between 0.5 to 5cm to the axis of separator and nozzle.
And Cluster Beam rifle adopts as the even dense distribution of Fig. 3 Triangular array, and use the kind of diameter minimum in current commercial Cluster Beam rifle, be directly generally 2-3cm, the nanometer bundle flow diameter of generation is 1cm.The line of line rifle is realized the distribution of continuous line along the scanning direction of arranging the line hole line of centres perpendicular to outermost one, the line of line rifle is along the direction of positive triangle perpendicular bisector.
Further, can utilize this cluster line rifle to form continuous wide cut nano particle line, its main points are integrated abundant line rifle, and with the substrate to be processed of given scanning direction.Particularly point out, now the integrated Cluster Beam rifle quantity of line cluster plate is determined by the ratio of single line rifle diameter and nanometer bundle flow diameter, is its square.Such as single line rifle diameter is 3cm, nanometer bundle flow diameter is 1cm, and this line plate at least needs integrated 3 × 3 line rifles, and along grey line sweep substrate in Fig. 3, forms like this deposition effect (as Fig. 4) of continuous wide breadth line on substrate.
The invention has the beneficial effects as follows, with the nanocluster particle beam source of Cluster Beam nozzle (being nanometer spray orifice) forming array (being the form of line cluster) composition array, can be used for the nano particle line processing of larger area and larger flux.Realize high-throughout wide cut nanometer line, integrated multiple nano particle line rifles, for nanometer processing, will contribute to improve the actual utilization that Nanosurface adds Cluster Beam in man-hour, improve the efficiency of Cluster Beam source in nanometer processing.And adopt abundant cluster, form wide cut, the continuous line processing in space, can realize continuous processing required in industry.
Accompanying drawing explanation
Fig. 1 is that a typical Cluster Beam produces and nozzle schematic diagram;
The exemplary beam distribution plan of Fig. 2 prior art;
Fig. 3 is line cluster plate schematic diagram;
Fig. 4 is the line cluster plate device schematic diagram that can carry out the work of continuous wide breadth line.
Embodiment
Shown in Fig. 1-4, sputtering target 1, spray orifice 2, sorting hole (separator) 3, beam center 4, line outer 5, spray orifice 6, line axis 7.
Scaled down, the less Cluster Beam rifle of employing diameter, utilize a branch of adfluxion group's plate that multiple line rifles are integrated.As Fig. 3, this line cluster plate is divided into two-layer, and the first layer is multiple (line rifle) nozzle, the second layer is separator, separator and nozzle corresponding (forming a line rifle) one by one, point-blank, two interlamellar spacings are that 0.5cm is between 5cm to the axis of separator and nozzle.
Further, can utilize this cluster line rifle to form continuous wide cut nano particle line, its main points are integrated abundant line rifle, and with the substrate to be processed of given scanning direction.Particularly point out, now the integrated Cluster Beam rifle quantity of line cluster plate is determined by the ratio of single line rifle diameter and nanometer bundle flow diameter, is its square.Such as single line rifle diameter is 3cm, nanometer bundle flow diameter is 1cm, and ratio is 3, and this line plate needs integrated at least 3 × 3 line rifles, and along grey line sweep substrate in figure, forms like this deposition effect (as Fig. 4) of continuous wide breadth line on substrate.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1. a neutral cluster line nozzle cluster is realized the method for wide cut nano particle line, it is characterized in that described line nozzle cluster is that integrated line rifle is realized by line cluster plate, line cluster plate is divided into two-layer, the first layer is the nozzle of multiple integrated line rifles, the second layer is separator, separator is corresponding one by one with nozzle, and point-blank, two-layer spacing is that 0.5cm is between 5cm to the axis of separator and nozzle.
2. neutral cluster line nozzle cluster according to claim 1 is realized the method for wide cut nano particle line, it is characterized in that Cluster Beam rifle adopts the even dense distribution of Triangular array.
3. neutral cluster line nozzle cluster according to claim 1 is realized the method for wide cut nano particle line, it is characterized in that realizing the required line rifle bundle of the continuous line of wide cut and determined divided by the diameter gained multiple of nano particle line by line rifle diameter, be this multiple square.
4. neutral cluster line nozzle cluster according to claim 2 is realized the method for wide cut nano particle line, it is characterized in that the line of line rifle is along the direction of positive triangle perpendicular bisector.
5. neutral cluster line nozzle cluster according to claim 1 is realized the method for wide cut nano particle line, it is characterized in that in line rifle, diameter is 2-3cm, and the nanometer bundle flow diameter of generation is 1cm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110702743A (en) * | 2019-10-16 | 2020-01-17 | 南京大学 | Nano electromechanical hydrogen sensor and preparation method thereof |
| CN111705303A (en) * | 2020-06-23 | 2020-09-25 | 南京大学 | Application and device of differential aerodynamic design in gas cluster beam source |
| CN111721599A (en) * | 2020-06-23 | 2020-09-29 | 南京大学 | Atomic-level material beam variable-temperature liquid coating collection method and device in vacuum |
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| JPS6419659A (en) * | 1987-07-13 | 1989-01-23 | Minolta Camera Kk | Cluster ion beam source |
| US20010054686A1 (en) * | 2000-03-20 | 2001-12-27 | Torti Richard P. | Detector and method for cluster ion beam diagnostics |
| JP2007113064A (en) * | 2005-10-20 | 2007-05-10 | Hitachi Zosen Corp | Cluster forming device |
| CN102001621A (en) * | 2010-09-16 | 2011-04-06 | 南京大学 | Preparation method of silver nanoparticle lattice with wide plasmon resonant frequency regulation range |
| WO2013017870A1 (en) * | 2011-08-01 | 2013-02-07 | The University Of Birmingham | Method for producing particulate clusters |
| CN103343317A (en) * | 2013-07-11 | 2013-10-09 | 南京大学 | Preparation method of TiO2 nanoparticle antireflective film based on nanocluster beam deposition system |
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2014
- 2014-01-27 CN CN201410038796.XA patent/CN103789734B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6419659A (en) * | 1987-07-13 | 1989-01-23 | Minolta Camera Kk | Cluster ion beam source |
| US20010054686A1 (en) * | 2000-03-20 | 2001-12-27 | Torti Richard P. | Detector and method for cluster ion beam diagnostics |
| JP2007113064A (en) * | 2005-10-20 | 2007-05-10 | Hitachi Zosen Corp | Cluster forming device |
| CN102001621A (en) * | 2010-09-16 | 2011-04-06 | 南京大学 | Preparation method of silver nanoparticle lattice with wide plasmon resonant frequency regulation range |
| WO2013017870A1 (en) * | 2011-08-01 | 2013-02-07 | The University Of Birmingham | Method for producing particulate clusters |
| CN103343317A (en) * | 2013-07-11 | 2013-10-09 | 南京大学 | Preparation method of TiO2 nanoparticle antireflective film based on nanocluster beam deposition system |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110702743A (en) * | 2019-10-16 | 2020-01-17 | 南京大学 | Nano electromechanical hydrogen sensor and preparation method thereof |
| CN110702743B (en) * | 2019-10-16 | 2021-09-28 | 南京大学 | Nano electromechanical hydrogen sensor and preparation method thereof |
| CN111705303A (en) * | 2020-06-23 | 2020-09-25 | 南京大学 | Application and device of differential aerodynamic design in gas cluster beam source |
| CN111721599A (en) * | 2020-06-23 | 2020-09-29 | 南京大学 | Atomic-level material beam variable-temperature liquid coating collection method and device in vacuum |
| CN111705303B (en) * | 2020-06-23 | 2021-08-27 | 南京大学 | Application and device of differential aerodynamic design in gas cluster beam source |
| CN111721599B (en) * | 2020-06-23 | 2021-08-27 | 南京大学 | Atomic-level material beam variable-temperature liquid coating collection method and device in vacuum |
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