CN103787313A - Preparation method of boron-doped graphene - Google Patents
Preparation method of boron-doped graphene Download PDFInfo
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- CN103787313A CN103787313A CN201210428452.0A CN201210428452A CN103787313A CN 103787313 A CN103787313 A CN 103787313A CN 201210428452 A CN201210428452 A CN 201210428452A CN 103787313 A CN103787313 A CN 103787313A
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Abstract
A preparation method of boron-doped graphene comprises the following steps: oxidating graphite to obtain graphite oxide; dispersing the graphite oxide in deionized water, carrying out ultrasonic treatment for 1 hour to 3 hours, filtering, drying, and thus obtaining graphene oxide; placing the graphene oxide in an inert gas atmosphere, heating up to 700 DEG C to 900 DEG C, carrying out heat preservation for 0.5 hour to 2.0 hours, then cooling to the room temperature, and thus obtaining graphene; carrying out modification treatment of the graphene by using helium gas and other plasma to obtain modified graphene; and mixing the modified graphene and diboron trioxide, then placing in the inert gas atmosphere, heating up to 800 DEG C to 1300 DEG C, carrying out heat preservation for 30 minutes to 180 minutes, then cooling to the room temperature, removing residual diboron trioxide, washing, drying, and thus obtaining the boron-doped graphene. The boron-doped graphene obtained by the preparation method has relatively high boron content.
Description
Technical field
The present invention relates to graphene composite material field, particularly relate to the preparation method of boron doped graphene.
Background technology
Graphene is as a kind of new carbon, since within 2004, being found, due to its two-dimentional unimolecular layer structure and excellent physical properties, as high theoretical specific surface area, excellent physical strength, good snappiness and high specific conductivity etc., bring dramatic change to the material in the fields such as the energy.
Graphene is very easy to derivatize, and in recent years, its derivative is also subject to investigator's extensive concern, and Graphene derivative mainly contains nitrogen-doped graphene and boron doped graphene at present.Wherein, in boron doped graphene, due to the outer few electronics of boron atom ratio carbon atom, be the doping of P-type, compare Graphene and there is better energy-storage property.In boron doped graphene, boron content is higher, and its energy-storage property is better.At present, the method for preparing boron doped graphene generally adopts high temperature hot doping method, and that the problem that this method exists is exactly prepared boron doped graphene boron content is lower.
Summary of the invention
Based on this, be necessary to provide the preparation method of the boron doped graphene that a kind of boron content is higher.
A preparation method for boron doped graphene, comprising:
Graphite is oxidized, obtains graphite oxide;
Described graphite oxide is dispersed in deionized water, ultrasonic 1 hour ~ 3 hours, filter, dry, obtain graphene oxide;
Described graphene oxide is placed under the atmosphere of rare gas element, is warming up to 700 ° of C ~ 900 ° C and is incubated 0.5 hour ~ after 2.0 hours, is cooled to room temperature, obtain Graphene;
Use helium plasma body to carry out modification to described Graphene, obtain modified graphene; And
Described modified graphene is mixed under the atmosphere that is placed on rare gas element with boron trioxide, be warming up to 800 ° of C ~ 1300 ° C and be incubated 30 minutes ~ after 180 minutes, be cooled to room temperature, remove remaining boron trioxide, washing, dry, obtain boron doped graphene.
In an embodiment, the described step of preparing graphite oxide comprises therein:
Graphite is added in the mixing solutions of the vitriol oil and concentrated nitric acid, at 0 ° of C temperature, stir;
Add potassium permanganate in described mixing solutions and be heated to 85 ° of C and react, and be incubated 30 minutes;
Add deionized water to the mixing solutions that has added potassium permanganate, continue to keep 30 minutes under 85 ° of C;
Add hydrogen peroxide to having added in the mixing solutions of deionized water;
The mixing solutions that has added hydrogen peroxide is carried out to suction filtration also to be washed solids with dilute hydrochloric acid and deionized water; And
Dry described solids, obtains graphite oxide.
In an embodiment, described use helium plasma body carries out modification to described Graphene to be processed 2 hours ~ 3 hours for described Graphene being placed under the helium plasma body that discharge power is 50W ~ 150W therein.
In an embodiment, the mass ratio of described modified graphene and boron trioxide is 0.5:1 ~ 3:1 therein.
In an embodiment, described rare gas element is argon gas or neon therein; The flow velocity of described rare gas element is 200mL/min ~ 400mL/min.
Therein in an embodiment, described in be warming up to 700 ° of C ~ 900 ° C temperature rise rate be 15 ° of C/min ~ 30 ° C/min.
Therein in an embodiment, described in be warming up to 800 ° of C ~ 1300 ° C temperature rise rate be 10 ° of C/min ~ 30 ° C/min.
Therein in an embodiment, the step of removing remaining boron trioxide is that sodium hydroxide solution that after modified graphene is reacted with boron trioxide, mixture is placed in 3mol/L stirs after 4 hours and filters.
Therein in an embodiment, described being dried as vacuum-drying 12 hours.
In an embodiment, the purity of described graphite is 99.5% therein.
In the preparation method of above-mentioned boron doped graphene, adopt helium plasma body to process and obtain modified graphene Graphene, then modified graphene is reacted under the protection of rare gas element in high temperature to acquisition boron doped graphene with boron trioxide.The modified graphene surface imperfection obtaining after helium Cement Composite Treated by Plasma is more, and while making modified graphene carry out boron doping, boron content is higher, therefore can obtain the boron doped graphene that boron content is higher.
Accompanying drawing explanation
Fig. 1 is the preparation method's of the boron doped graphene of an embodiment schema.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the preparation method of boron doped graphene is described in further detail.
Refer to Fig. 1, the preparation method of the boron doped graphene of an embodiment comprises the following steps:
S101, is oxidized graphite, obtains graphite oxide.
Its concrete steps are: graphite is added in the mixing solutions of the vitriol oil and concentrated nitric acid, mixes in bath at frozen water, keeping temperature is to stir under the condition about 0 ° of C; Then add at leisure potassium permanganate to mixing solutions, because potassium permanganate has strong oxidizing property under acidic conditions, can be oxidized graphite; Again mixing solutions is heated to 85 ° of C and reacts, and be incubated 30 minutes, in this insulating process, can further be oxidized graphite; Add deionized water, continue to keep 85 ° of C temperature 30 minutes; Then add hydrogen peroxide to mixing solutions, remove excessive potassium permanganate, obtain graphite oxide solution; Graphite oxide solution is carried out to suction filtration, obtains solids, and with dilute hydrochloric acid and deionized water to solids repetitive scrubbing, remove impurity, by solids in vacuum drying oven at 60 ° of C temperature dry 12 hours, obtain graphite oxide.
In the present embodiment, graphite can be 99.5% graphite.The massfraction of the vitriol oil is 98%, and the massfraction of concentrated nitric acid is 65%.The massfraction of hydrogen peroxide is 30%.
S102, is dispersed in graphite oxide in deionized water, and ultrasonic 1 hour ~ 3 hours, filter, dry, obtain graphene oxide.
Its concrete steps are: the graphite oxide that S101 is made is dispersed in and in deionized water, forms graphite oxide solution; Graphite oxide solution is carried out after supersound process, graphite oxide solution being filtered, obtain solids; Drying solid thing obtains graphene oxide.
In the present embodiment, the concentration of graphite oxide can be 0.5g/L ~ 2.0g/L, and ultrasonic power can be 500W, and ultrasonic time can be 1 hour ~ 3 hours.Dry process is for being placed in solids at 60 ° of C temperature of vacuum chamber and being dried 12 hours.
S103, is placed in graphene oxide under the atmosphere of rare gas element, is warming up to 700 ° of C ~ 900 ° C and is incubated 0.5 hour ~ after 2.0 hours, is cooled to room temperature, obtains Graphene.
In the present embodiment, rare gas element can be argon gas or neon, and the flow velocity of rare gas element can be 200mL/min ~ 400mL/min.Temperature rise rate in temperature-rise period can be 15 ° of C/min ~ 30 ° C/min.After ambient temperature is increased to desirable value, be incubated 0.5 hour ~ 2.0 hours, there is reduction reaction in graphene oxide, obtain Graphene under the protection of rare gas element in high temperature.
S104, uses helium plasma body to carry out modification to Graphene, obtains modified graphene.
In the present embodiment, helium plasma body is He dielectric barrier discharge plasma, and the cold-plasma jet that helium forms by capillary dielectric barrier discharge has the transport property of similar bullet, can be applied to Surface modification of organic material.Graphene is placed in reaction chamber, and off-response chamber, vacuumizes rear unlatching inlet pipe and passes into helium, after eliminating residual gas, starts high frequency electric source, and adjusting discharge power is 50W ~ 150W, processes after 2 hours ~ 3 hours and obtains modified graphene.
S105, mixes modified graphene under the atmosphere that is placed on rare gas element with boron trioxide, is warming up to 800 ° of C ~ 1300 ° C and is incubated 30 minutes ~ after 180 minutes, is cooled to room temperature, removes remaining boron trioxide, and washing is dry, obtains boron doped graphene.
In the present embodiment, the mass ratio of modified graphene and boron trioxide is 0.5:1 ~ 3:1.Rare gas element can be argon gas or neon.The flow velocity of rare gas element can be 200mL/min ~ 400mL/min.In temperature-rise period, temperature rise rate can be 10 ° of C/min ~ 30 ° C/min.The process that is cooled to room temperature is to carry out under the atmosphere of rare gas element.The concrete steps of removing remaining boron trioxide can be for after the modified graphene that makes until S104 reacts with boron trioxide, the sodium hydroxide solution that the mixture of acquisition is placed in to 3mol/L stirs 4 hours, responseless boron trioxide is dissolved, then filter.Described being dried as filtrate being placed in to 60 ° of C vacuum drying ovens dry 12 hours, obtains boron doped graphene.
In the preparation method of above-mentioned boron doped graphene, use helium plasma body to process and obtain modified graphene Graphene, then modified graphene is reacted under the protection of rare gas element in high temperature to acquisition boron doped graphene with boron trioxide.The modified graphene surface imperfection obtaining after helium Cement Composite Treated by Plasma is more, and while making this modified graphene carry out boron doping, boron content is higher; Can obtain the boron doped graphene that boron content is higher.And above-mentioned preparation method's technique is simple, be applicable to large-scale industrial production.
Describe below in conjunction with specific embodiment.
Embodiment 1
(1) preparation of graphite oxide: take purity and be 99.5% graphite 1g, in the mixing solutions that the concentrated nitric acid that the vitriol oil that to add by 90mL massfraction be 98% and 25mL massfraction are 65% forms, mixing solutions is placed in to frozen water and mixes to bathe under environment and stir 20 minutes; In mixing solutions, add 6g potassium permanganate at leisure again, stir 1 hour; Then mixing solutions is heated to 85 ° of C and keeps 30 minutes; Add afterwards 92mL deionized water and keep 30 minutes under 85 ° of C; Finally add the superoxol of 10mL massfraction 30%, stir 10 minutes; Mixing solutions is carried out to suction filtration, then with 100mL dilute hydrochloric acid and 150mL deionized water, solids is washed respectively successively, wash altogether three times.Wherein once washing process is for first solids being placed in to dilute hydrochloric acid, and suction filtration is poured deionized water into after waiting filtrate to drain again and carried out suction filtration.Finally by solids dry graphite oxide that obtains for 12 hours in 60 ° of C vacuum drying ovens.
(2) preparation of graphene oxide: the graphite oxide obtaining in (1) is dispersed in deionized water, and the concentration of graphite oxide is 1g/L; Under the condition that is 500W at power with Ultrasonic Cleaners, after ultrasonic 2 hours, filter and obtain solids; The vacuum drying oven that solids is placed in to 60 ° of C is dried 12 hours, obtains graphene oxide.
(3) preparation of Graphene: it is under 400mL/min argon gas atmosphere that the graphene oxide obtaining in (2) is placed in to flow velocity, the envrionment temperature of graphene oxide is risen to 700 ° of C by temperature rise rate with 30 ° of C/min, keep 2 hours, then the argon gas atmosphere that is 400mL/min at flow velocity drops to room temperature, obtains Graphene.
(4) preparation of modified graphene: the Graphene obtaining in (3) is placed under the helium condition of plasma that discharge power is 100W and is processed 2 hours, obtain modified graphene.
(5) preparation of boron doped graphene: the modified graphene obtaining in (4) is mixed and obtains mixture with boron trioxide, and wherein the mass ratio of modified graphene and boron trioxide is 3:1; Then be placed under the argon gas atmosphere that flow velocity is 400mL/min, with 20 ° of C/min temperature rise rates, mixture temperature around risen to 800 ° of C, and keep 30 minutes; The argon gas atmosphere that is 400mL/min at flow velocity drops to room temperature; The sodium hydroxide solution that mixture is placed in to 3mol/L stirs 4 hours, filters and obtains filtrate, with after deionized water washing and filtering thing, filtrate being placed in to 60 ° of C vacuum drying ovens dry 12 hours, obtains boron doped graphene.
Embodiment 2
(1) preparation of graphite oxide: take purity and be 99.5% graphite 1g, in the mixing solutions that the concentrated nitric acid that the vitriol oil that to add by 90mL massfraction be 98% and 25mL massfraction are 65% forms, mixing solutions is placed in to frozen water and mixes to bathe under environment and stir 20 minutes; In mixing solutions, add 6g potassium permanganate at leisure again, stir 1 hour; Then mixing solutions is heated to 85 ° of C and keeps 30 minutes; Add afterwards 92mL deionized water and keep 30 minutes under 85 ° of C; Finally add the superoxol of 10mL massfraction 30%, stir 10 minutes; Mixing solutions is carried out to suction filtration, then with 100mL dilute hydrochloric acid and 150mL deionized water, solids is washed respectively successively, wash altogether three times, finally by solids dry graphite oxide that obtains for 12 hours in 60 ° of C vacuum drying ovens.
(2) preparation of graphene oxide: the graphite oxide obtaining in (1) is dispersed in deionized water, and the concentration of graphite oxide is 0.5g/L; Under the condition that is 500W at power with Ultrasonic Cleaners, after ultrasonic 1 hour, filter and obtain solids; The vacuum drying oven that solids is placed in to 60 ° of C is dried 12 hours, obtains graphene oxide.
(3) preparation of Graphene: it is under 300mL/min argon gas atmosphere that the graphene oxide obtaining in (2) is placed in to flow velocity, the envrionment temperature of graphene oxide is risen to 800 ° of C by temperature rise rate with 25 ° of C/min, keep 1 hour, then the argon gas atmosphere that is 300mL/min at flow velocity drops to room temperature, obtains Graphene.
(4) preparation of modified graphene: the middle Graphene that (3) are obtained is placed under the helium condition of plasma that discharge power is adjusted to 50W and processes 2 hours, obtains modified graphene.
(5) preparation of boron doped graphene: the modified graphene obtaining in (4) is mixed and obtains mixture with boron trioxide, and wherein the mass ratio of modified graphene and boron trioxide is 2:1; Then be placed under the argon gas atmosphere that flow velocity is 300mL/min, with 15 ° of C/min temperature rise rates, mixture temperature around risen to 900 ° of C, and keep 120 minutes; The argon gas atmosphere that is 300mL/min at flow velocity drops to room temperature; The sodium hydroxide solution that mixture is placed in to 3mol/L stirs 4 hours, filters and obtains filtrate, with after deionized water washing and filtering thing, filtrate being placed in to 60 ° of C vacuum drying ovens dry 12 hours, obtains boron doped graphene.
Embodiment 3
(1) preparation of graphite oxide: take purity and be 99.5% graphite 1g, in the mixing solutions that the concentrated nitric acid that the vitriol oil that to add by 90mL massfraction be 98% and 25mL massfraction are 65% forms, mixing solutions is placed in to frozen water and mixes to bathe under environment and stir 20 minutes; In mixing solutions, add 6g potassium permanganate at leisure again, stir 1 hour; Then mixing solutions is heated to 85 ° of C and keeps 30 minutes; Add afterwards 92mL deionized water and keep 30 minutes under 85 ° of C; Finally add the superoxol of 10mL massfraction 30%, stir 10 minutes; Mixing solutions is carried out to suction filtration, then with 100mL dilute hydrochloric acid and 150mL deionized water, solids is washed respectively successively, wash altogether three times, finally by solids dry graphite oxide that obtains for 12 hours in 60 ° of C vacuum drying ovens.
(2) preparation of graphene oxide: the graphite oxide obtaining in (1) is dispersed in deionized water, and the concentration of graphite oxide is 2.0g/L; Under the condition that is 500W at power with Ultrasonic Cleaners, after ultrasonic 3 hours, filter and obtain solids; The vacuum drying oven that solids is placed in to 60 ° of C is dried 12 hours, obtains graphene oxide.
(3) preparation of Graphene: it is under 400mL/min neon atmosphere that the graphene oxide obtaining in (2) is placed in to flow velocity, the envrionment temperature of graphene oxide is risen to 900 ° of C by temperature rise rate with 20 ° of C/min, keep 0.5 hour, then the neon atmosphere that is 400mL/min at flow velocity drops to room temperature, obtains Graphene.
(4) preparation of modified graphene: the middle Graphene that (3) are obtained is placed under the helium condition of plasma that discharge power is adjusted to 100W and processes 3 hours, obtains modified graphene.
(5) preparation of boron doped graphene: the modified graphene obtaining in (4) is mixed and obtains mixture with boron trioxide, and wherein the mass ratio of modified graphene and boron trioxide is 1:1; Then being placed in flow velocity is under the neon atmosphere of 400mL/min, with 30 ° of C/min temperature rise rates, mixture temperature is around risen to 1100 ° of C, and keeps 180 minutes; The neon atmosphere that is 400mL/min at flow velocity drops to room temperature, the sodium hydroxide solution that mixture is placed in to 3mol/L stirs 4 hours, filtration obtains filtrate, with after deionized water washing and filtering thing, filtrate being placed in to 60 ° of C vacuum drying ovens dry 12 hours, obtains boron doped graphene.
Embodiment 4
(1) preparation of graphite oxide: take purity and be 99.5% graphite 1g, in the mixing solutions that the concentrated nitric acid that the vitriol oil that to add by 90mL massfraction be 98% and 25mL massfraction are 65% forms, mixing solutions is placed in to frozen water and mixes to bathe under environment and stir 20 minutes; In mixing solutions, add 6g potassium permanganate at leisure again, stir 1 hour; Then mixing solutions is heated to 85 ° of C and keeps 30 minutes; Add afterwards 92mL deionized water and keep 30 minutes under 85 ° of C; Finally add the superoxol of 10mL massfraction 30%, stir 10 minutes; Mixing solutions is carried out to suction filtration, then with 100mL dilute hydrochloric acid and 150mL deionized water, solids is washed respectively successively, wash altogether three times, finally by solids dry graphite oxide that obtains for 12 hours in 60 ° of C vacuum drying ovens.
(2) preparation of graphene oxide: the graphite oxide obtaining in (1) is dispersed in deionized water, and the concentration of graphite oxide is 1.0g/L; Under the condition that is 500W at power with Ultrasonic Cleaners, after ultrasonic 3 hours, filter and obtain solids; The vacuum drying oven that solids is placed in to 60 ° of C is dried 12 hours, obtains graphene oxide.
(3) preparation of Graphene: it is under 200mL/min argon gas atmosphere that the graphene oxide obtaining in (2) is placed in to flow velocity, rises to 700 ° of C with the temperature rise rate of 15 ° of C/min by the envrionment temperature of graphene oxide, keeps 2 hours; Then the argon gas atmosphere that is 200mL/min at flow velocity drops to room temperature, obtains Graphene.
(4) preparation of modified graphene: the middle Graphene that (3) are obtained is placed under the helium condition of plasma that discharge power is adjusted to 150W and processes 2 hours, obtains modified graphene.
(5) preparation of boron doped graphene: the modified graphene obtaining in (4) is mixed and obtains mixture with boron trioxide, and wherein the mass ratio of modified graphene and boron trioxide is 0.5:1; Then be placed under the argon gas atmosphere that flow velocity is 200mL/min, with 10 ° of C/min temperature rise rates, mixture temperature around risen to 1300 ° of C, and keep 120 minutes, the argon gas atmosphere that is 200mL/min at flow velocity drops to room temperature; The sodium hydroxide solution that mixture is placed in to 3mol/L stirs 4 hours, filters and obtains filtrate, with after deionized water washing and filtering thing, filtrate being placed in to 60 ° of C vacuum drying ovens dry 12 hours, obtains boron doped graphene.
The content of the each composition in boron doped graphene prepared by embodiment 1 to embodiment 4 is measured, and the result obtaining is as shown in table 1.
The content of the each composition of boron doped graphene of table 1 embodiment 1 ~ 4
| Sample | Carbon (%) | Boron (%) | Oxygen element (%) |
| Embodiment 1 | 84.2 | 10.2 | 5.6 |
| Embodiment 2 | 83.0 | 11.1 | 5.9 |
| Embodiment 3 | 82.4 | 12.4 | 5.2 |
| Embodiment 4 | 81.5 | 13.7 | 4.8 |
Data from above table are known, and the boron content of the prepared boron doped graphene of embodiment 1 to embodiment 4 is higher, and its massfraction all, more than 10%, is up to 13.7%.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a preparation method for boron doped graphene, is characterized in that, comprising:
Graphite is oxidized, obtains graphite oxide;
Described graphite oxide is dispersed in deionized water, ultrasonic 1 hour ~ 3 hours, filter, dry, obtain graphene oxide;
Described graphene oxide is placed under the atmosphere of rare gas element, is warming up to 700 ° of C ~ 900 ° C and is incubated 0.5 hour ~ after 2.0 hours, is cooled to room temperature, obtain Graphene;
Use helium plasma body to carry out modification to described Graphene, obtain modified graphene; And
Described modified graphene is mixed under the atmosphere that is placed on rare gas element with boron trioxide, be warming up to 800 ° of C ~ 1300 ° C and be incubated 30 minutes ~ after 180 minutes, be cooled to room temperature, remove remaining boron trioxide, washing, dry, obtain boron doped graphene.
2. the preparation method of boron doped graphene according to claim 1, is characterized in that, the described step of preparing graphite oxide comprises:
Graphite is added in the mixing solutions of the vitriol oil and concentrated nitric acid, at 0 ° of C temperature, stir;
Add potassium permanganate in described mixing solutions and be heated to 85 ° of C and react, and be incubated 30 minutes;
Add deionized water to the mixing solutions that has added potassium permanganate, continue to keep 30 minutes under 85 ° of C;
Add hydrogen peroxide to having added in the mixing solutions of deionized water;
The mixing solutions that has added hydrogen peroxide is carried out to suction filtration also to be washed solids with dilute hydrochloric acid and deionized water; And
Dry described solids, obtains graphite oxide.
3. the preparation method of boron doped graphene according to claim 1, it is characterized in that, described use helium plasma body carries out modification to described Graphene to be processed 2 hours ~ 3 hours for described Graphene being placed under the helium plasma body that discharge power is 50W ~ 150W.
4. the preparation method of boron doped graphene according to claim 1, is characterized in that, the mass ratio of described modified graphene and boron trioxide is 0.5:1 ~ 3:1.
5. the preparation method of boron doped graphene according to claim 1, is characterized in that, described rare gas element is argon gas or neon; The flow velocity of described rare gas element is 200mL/min ~ 400mL/min.
6. the preparation method of boron doped graphene according to claim 1, is characterized in that, described in be warming up to 700 ° of C ~ 900 ° C temperature rise rate be 15 ° of C/min ~ 30 ° C/min.
7. the preparation method of boron doped graphene according to claim 1, is characterized in that, described in be warming up to 800 ° of C ~ 1300 ° C temperature rise rate be 10 ° of C/min ~ 30 ° C/min.
8. the preparation method of boron doped graphene according to claim 1, it is characterized in that, the step of removing remaining boron trioxide is that sodium hydroxide solution that after modified graphene is reacted with boron trioxide, mixture is placed in 3mol/L stirs after 4 hours and filters.
9. the preparation method of boron doped graphene according to claim 1, is characterized in that, described being dried as vacuum-drying 12 hours.
10. the preparation method of boron doped graphene according to claim 1, is characterized in that, the purity of described graphite is 99.5%.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104925794A (en) * | 2015-06-11 | 2015-09-23 | 青岛大学 | Method for growing three-dimensional nitrogen-doped graphene by taking nanoporous graphene as substrate |
| CN104973596A (en) * | 2015-06-30 | 2015-10-14 | 华南理工大学 | Hetero atom-doped hollow spherical grapheme composite material, and preparation method and applications thereof |
| CN105399077A (en) * | 2015-12-09 | 2016-03-16 | 中南大学 | Preparation method of atom doped carbon material in physical field |
-
2012
- 2012-10-31 CN CN201210428452.0A patent/CN103787313A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| ZHEN-HUAN SHENG，ET AL.: ""Synthesis of boron doped graphene for oxygen reduction reaction in fuel cells"", 《JOURNAL OF MATERIALS CHEMISTRY》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104925794A (en) * | 2015-06-11 | 2015-09-23 | 青岛大学 | Method for growing three-dimensional nitrogen-doped graphene by taking nanoporous graphene as substrate |
| CN104925794B (en) * | 2015-06-11 | 2016-05-04 | 青岛大学 | A kind of taking nano-pore Graphene as substrate grown the method for three-dimensional nitrogen-doped graphene |
| CN104973596A (en) * | 2015-06-30 | 2015-10-14 | 华南理工大学 | Hetero atom-doped hollow spherical grapheme composite material, and preparation method and applications thereof |
| CN105399077A (en) * | 2015-12-09 | 2016-03-16 | 中南大学 | Preparation method of atom doped carbon material in physical field |
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Application publication date: 20140514 |