CN103779148A - Field emission cathode and fabricating method thereof - Google Patents
Field emission cathode and fabricating method thereof Download PDFInfo
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- CN103779148A CN103779148A CN201210406044.5A CN201210406044A CN103779148A CN 103779148 A CN103779148 A CN 103779148A CN 201210406044 A CN201210406044 A CN 201210406044A CN 103779148 A CN103779148 A CN 103779148A
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Abstract
The invention provides a field emission cathode, which comprises a substrate, a conductive film arranged on the substrate and an electron emitter array formed on the conductive film. A metal buffer layer with a thickness of 0.4 to 0.8 mum is arranged between the conductive film and the electron emitter array; and material of the metal buffer layer is metal or metal compound whose thermal expansion coefficients is between those of the substrate and those of the electron emitter array. With the metal buffer layer of the field emission cathode, the thermal expansion coefficient matching degree between the substrate and the electron emitter array can be improved, the phenomena that the contact surface is uneven and the contact resistance is increased due to the fact that deformation happens between the substrate and the electron emitter array are thus improved, and the electron emission efficiency and the service life of the electron emitter array are finally improved. The invention also provides a fabricating method for the field emission cathode.
Description
Technical field
The present invention relates to feds field, be specifically related to a kind of field-transmitting cathode and preparation method thereof.
Background technology
Feds is a kind of emerging light source, is by applying the device of electric field from cathode electrode electron emission bombardment anode light, can realizing and utilize high-power high density electron stream luminous.Field emission light source has advantages of energy-saving and environmental protection, can in adverse circumstances, work, and has been widely used in, in display, lighting apparatus and microwave component, having huge application potential.
Electron emitter is that cold-cathode electron source is the important component part of field emission light source, and its electronic transmitting efficiency directly affects the luminous efficiency of field emission light source.And the electronic transmitting efficiency of electron emitter is determined by two factors, the one, the field enhancement factor of electron emitter self, the 2nd, the ohmic contact between electron emitter and substrate.The field enhancement factor of electron emitter and its draw ratio, the direction of growth, stand density are contacted directly, and at present, the preparation direction of growth, draw ratio and the controlled electron emitter of density, as the technology such as making ZnO nanometer rods, carbon nano-tube are disclosed.
The ohmic contact of low contact resistance is the basis of realizing high-quality feds.Good matched coefficients of thermal expansion is to realize the important step of low contact resistance.Thermal expansion refers to that the volume of object or length are with the temperature phenomenon increasing that raises.In the time that device is worked, temperature raises, and because substrate and electron emitter have different thermal coefficient of expansions, substrate does not mate with the deformation that electron emitter occurs, thereby causes the contact-making surface between substrate and electron emitter inhomogeneous, and contact resistance increases.Inhomogeneous contact-making surface can cause electron emitter easily damaged, the lost of life; Excessive contact resistance can reduce the electronic transmitting efficiency of electron emitter.
Summary of the invention
For overcoming the defect of above-mentioned prior art, first aspect present invention provides a kind of field-transmitting cathode, this field-transmitting cathode is provided with metal buffer layer between substrate and electron emitter, this resilient coating can improve the matched coefficients of thermal expansion degree between substrate and electron emitter, reduce contact resistance, finally improve electronic transmitting efficiency and the useful life of electron emitter.Second aspect present invention provides the preparation method of above-mentioned field-transmitting cathode, and its method technique is simple, is easy to accomplish scale production.
First aspect present invention provides a kind of field-transmitting cathode, comprise substrate, be arranged on the conductive film on substrate and be formed on the electron emission volume array on conductive film, between described conductive film and electron emission volume array, being provided with a thickness is the metal buffer layer of 0.4 ~ 0.8 μ m, and the material of described metal buffer layer is metal or the metallic compound of thermal coefficient of expansion between described substrate and described electron emission volume array.
The material of described metal buffer layer is metal or the metallic compound of thermal coefficient of expansion between described substrate and described electron emission volume array.Like this, just can improve the matched coefficients of thermal expansion degree between substrate and electron emission volume array, between substrate and electron emission volume array, there is deformation and make contact-making surface inhomogeneous thereby improve, the phenomenon that contact resistance increases, electronic transmitting efficiency and the useful life of finally improving electron emission volume array.
Preferably, the material of described metal buffer layer is light metal or metallic compound.Adopt light metal to be conducive to improve the forward light extraction efficiency of field-transmitting cathode.
More preferably, the material of described metal buffer layer is crome metal, titanium, platinum or its compound.The thermal coefficient of expansion of described chromium is 6.2 × 10
-6m/K, the thermal coefficient of expansion of described titanium is 10.8 × 10
-6m/K, the thermal coefficient of expansion of described platinum is 9.0 × 10
-6m/K.
Preferably, the thickness of described metal buffer layer is 0.5 ~ 0.6 μ m.
Preferably, the particle size of described metal or metallic compound is 8 ~ 15nm.
The insulated substrate that described substrate can generally use for currently available technology.Preferably, described substrate is silicon chip, pottery or glass.The thermal coefficient of expansion of described silicon chip substrate is 3.0 × 10
-6m/K, the thermal coefficient of expansion of described ceramic substrate is 9.0 × 10
-6m/K, the thermal coefficient of expansion of described glass substrate is 4.5 × 10
-6m/K.
Described conductive film can be indium tin oxide films, the metal with electric conductivity or metal-oxide film.Preferably, described conductive film is indium tin oxide films.
Preferably, the thickness of described conductive film is 10 ~ 100nm.
Preferably, described electron emission volume array is ZnO nano-rod array or carbon nano pipe array.The thermal coefficient of expansion of described ZnO nanorod is 3.3 ~ 3.8 × 10
-6m/K, the thermal coefficient of expansion of described carbon nano-tube is 0.1 × 10
-6m/K.But during due to carbon nano-tube, what conventionally contact with conductive film is that (nickel dam or cobalt layer, the thermal coefficient of expansion of nickel is 11 × 10 to catalyst layer
-6m/K, the thermal coefficient of expansion of cobalt is 12 × 10
-6m/K), therefore, in the time that electron emission volume array is carbon nano pipe array, the material of metal buffer layer is preferably titanium or platinum according to the thermal coefficient of expansion of metal.The thermal coefficient of expansion of described titanium is 10.8 × 10
-6m/K, the thermal coefficient of expansion of described platinum is 9.0 × 10
-6m/K.
Interval between diameter and adjacent two electron emitters of the height of the present invention to electron emission volume array, each electron emitter is not particularly limited.Preferably, the height of described electron emission volume array is 5 ~ 10 μ m.Preferably, being shaped as of described electron emission volume array is cylindrical, and draw ratio is 5:1.
Second aspect present invention provides a kind of preparation method of field-transmitting cathode, comprises the following steps:
(1) provide clean substrate, prepare layer of conductive film at described substrate surface;
(2) go out required groove model in described conductive film surface etch;
(3) in the groove of described groove model, prepare the metal buffer layer that a thickness is 0.4 ~ 0.8 μ m;
(4) at superficial growth one catalyst layer of described metal buffer layer;
(5) the electron emission volume array of growing on described catalyst layer, obtains field-transmitting cathode;
Wherein, the material of described metal buffer layer is metal or the metallic compound of thermal coefficient of expansion between described substrate and described electron emission volume array.
The material of described metal buffer layer is metal or the metallic compound of thermal coefficient of expansion between described substrate and described electron emission volume array.Like this, just can improve the matched coefficients of thermal expansion degree between substrate and electron emission volume array, between substrate and electron emission volume array, there is deformation and make contact-making surface inhomogeneous thereby improve, the phenomenon that contact resistance increases, electronic transmitting efficiency and the useful life of finally improving electron emission volume array.
Preferably, the material of described metal buffer layer is light metal or metallic compound.Adopt light metal to be conducive to improve the forward light extraction efficiency of field-transmitting cathode.
More preferably, the material of described metal buffer layer is crome metal, titanium, platinum or its compound.The thermal coefficient of expansion of described chromium is 6.2 × 10
-6m/K, the thermal coefficient of expansion of described titanium is 10.8 × 10
-6m/K, the thermal coefficient of expansion of described platinum is 9.0 × 10
-6m/K.
Preferably, the thickness of described metal buffer layer is 0.5 ~ 0.6 μ m.
Preferably, the particle size of described metal or metallic compound is 8 ~ 15nm.
Preferably, described metal buffer layer adopts spin-coating method, silk screen print method or magnetron sputtering method preparation.Wherein, the operating parameter of each method is determined by the concrete material of metal buffer layer, for different metals or metallic compound, selects the different operating parameters of answering in contrast.The present invention does not make particular restriction to concrete operations parameter, as long as metal buffer layer successfully can be prepared on substrate.
Wherein, for spin-coating method and silk screen print method, first described metal is joined in organic solvent, be mixed with the slurry containing described metal.
The insulated substrate that described substrate can generally use for currently available technology.Preferably, described substrate is silicon chip, pottery or glass.The thermal coefficient of expansion of described silicon chip substrate is 3.0 × 10
-6m/K, the thermal coefficient of expansion of described ceramic substrate is 9.0 × 10
-6m/K, the thermal coefficient of expansion of described glass substrate is 4.5 × 10
-6m/K.
The cleaning operation of described substrate is: use successively the solution ultrasonic cleaning such as distilled water, acetone, absolute ethyl alcohol, distilled water, in every kind of solution, the time of ultrasonic cleaning is 5 ~ 30 minutes.
Described conductive film can be indium tin oxide films, the metal with electric conductivity or metal-oxide film.Preferably, described conductive film is indium tin oxide films.Described conductive film is prepared on described substrate by the mode of magnetron sputtering.
Preferably, the thickness of described conductive film is 10 ~ 100nm.
The method of the required groove model of described etching can be photoetch method, can be also ion etching method.Preferably, the method for described etching is photoetch method.More preferably, described photoetch method is X-ray lithography erosion method.The concrete operations of described X-ray lithography erosion can be: on substrate, form one deck resist layer, then adopt X ray to go out required groove model at resist layer photoengraving, prepare electron emission volume array in order to subsequent growth.The resist using in described etching process is polymethyl methacrylate (PMMA).Preferably, described groove model comprises that diameter is 40 ~ 60nm, high 0.3 ~ 0.4 μ m, and the cycle is several grooves of 5 ~ 10 μ m rectangular arranged.
Preferably, described electron emission volume array is ZnO nano-rod array or carbon nano pipe array.
The thermal coefficient of expansion of described ZnO nanorod is 3.3 ~ 3.8 × 10
-6m/K, the thermal coefficient of expansion of described carbon nano-tube is 0.1 × 10
-6m/K.
Preferably, described catalyst layer adopts magnetron sputtering method preparation, and described electron emission volume array adopts chemical vapour deposition technique preparation.
Described catalyst layer is arranged in the groove of groove model.In the time that described electron emission volume array is ZnO nano-rod array, described catalyst layer corresponds to ZnO inculating crystal layer.Preferably, described ZnO inculating crystal layer adopts the method preparation of magnetron sputtering.The thickness of described ZnO inculating crystal layer is 100 ~ 150nm.
The concrete operations of described magnetron sputtering method making ZnO inculating crystal layer are not particularly limited, and adopt existing routine operation preparation.Be specifically as follows, respectively ZnO target, substrate be fixed in magnetron sputtering vacuum chamber, the distance of adjusting is between the two 10cm; Vacuumize and reach default vacuum degree 4.5 × 10
-4pa, is heated to 200 ~ 300 ℃, passes into argon gas and oxygen mixed gas (mass ratio is 1: 1), makes vacuum chamber pressure to 0.4Pa, with the sputtering power sputtering target material 2h of 30W, naturally cools to room temperature.
Adopt the concrete operations of chemical vapour deposition technique making ZnO nanometer stick array to be: the substrate for preparing ZnO inculating crystal layer is fixed in chemical vapor depsotition equipment, Zn powder is placed in the alumina crucible of chemical vapor depsotition equipment, pass into argon gas and oxygen to pressure in vacuum chamber be 1.33 × 10
5pA, by crucible heating to 600 ℃, stops heating after deposition 60 ~ 100min with the speed of 5 ℃/min.
In the time that described electron emission volume array is carbon nano pipe array, described catalyst layer corresponds to nickel dam or cobalt layer.Preferably, described nickel dam and cobalt layer adopt the method preparation of magnetron sputtering, and thickness is 20 ~ 40nm.
The concrete operations that described magnetron sputtering method is prepared nickel dam and cobalt layer are not particularly limited, and adopt existing routine operation preparation.Be specifically as follows, will prepare the substrate of metal buffer layer, and catalyst nickel or cobalt target, being fixed in magnetron sputtering vacuum chamber, the distance of adjusting substrate and target is 8 ~ 10cm, is evacuated to 1 × 10
-4pa, passing into flow is the inert gas argon gas of 6sccm, is heated to 300 ~ 400 ℃, with the sputtering power sputtering target material of 30W 15 ~ 25 minutes, cools to room temperature with the furnace.
Adopt the concrete operations of chemical vapor deposition for carbon nanotubes array to be: the substrate for preparing catalyst layer is placed in chemical vapor depsotition equipment, temperature maintain 600 ~ 800 ℃ 15 minutes, make catalyst layer sintering, the direct-current discharge of 1KW and the bias voltage of 600V are provided subsequently between negative electrode and positive electrode; Pass into mass ratio and be the acetylene of 3: 8 and ammonia 15 minutes; Cool to room temperature with the furnace.
Preparing after catalyst layer or growing after electron emission volume array, adopting following method to remove resist: at 50 ℃, sonic oscillation 50min in acetone soln.
Interval between diameter and adjacent two electron emitters of the height of the present invention to electron emission volume array, each electron emitter is not particularly limited.Preferably, the height of described electron emission volume array is 5 ~ 10 μ m.Preferably, being shaped as of described electron emission volume array is cylindrical, and draw ratio is 5: 1.
The invention provides a kind of field-transmitting cathode and preparation method thereof, there is following beneficial effect:
(1) field-transmitting cathode provided by the invention, between substrate and electron emitter, be provided with metal buffer layer, this resilient coating can improve the matched coefficients of thermal expansion degree between substrate and electron emission volume array, between substrate and electron emission volume array, there is deformation and make contact-making surface inhomogeneous thereby improve, the phenomenon that contact resistance increases, electronic transmitting efficiency and the useful life of finally improving electron emission volume array;
(4) preparation method's technique of field-transmitting cathode provided by the invention is simple, is easy to realize heavy industrialization and uses.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet that the embodiment of the present invention 1 is prepared field-transmitting cathode;
Fig. 2 is the structural representation of the field-transmitting cathode prepared of the embodiment of the present invention 2.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
As shown in Figure 1, a kind of preparation method of field-transmitting cathode, comprises the following steps:
(1) cleaning ceramic substrate 11, adopts the method for magnetron sputtering that indium tin oxide films is set; The cleaning operation of described ceramic substrate is: carry out ultrasonic cleaning with distilled water, acetone, absolute ethyl alcohol, distilled water successively, in every kind of solution, the time of ultrasonic cleaning is 5 ~ 30 minutes;
(2) on the indium tin oxide films surface of substrate 11, utilize X-ray lithography method to etch and comprise that diameter is 40 ~ 50nm, high 0.3 ~ 0.4 μ m, the cycle is the groove model 12 of several grooves of 10 μ m rectangular arranged; Adopt polymethyl methacrylate (PMMA) as resist;
(3) in the groove of groove model 12, utilizing spin-coating method to prepare thickness is that the metallic chromium layer 13 of 0.4 μ m is as metal buffer layer, particularly, a. ceramic substrate 11 is placed on the rotating disk of glue spreader, with the rotating speed rotation of approximately 50 revolutions per seconds, and continue splash into chromium slurry 4 minute to the center on ceramic substrate 11 surfaces with the speed of 1 drop/sec by the glue head that drips of glue spreader.The mixture that chromium slurry is chromium particle, organic solvent, adhesive, wherein, the purity of chromium particle is more than 99.9%, and content is 60% of chromium slurry weight, and chromium particle is of a size of 8nm; Organic solvent can be the molten acid anhydride acetic acid esters of butyl, diethylene glycol monobutyl ether acetate, DGDE acetate or isophorone; In the present embodiment, organic solvent is the molten acid anhydride acetic acid esters of butyl; Adhesive is epoxy resin; B. stop splashing into chromium slurry, and accelerate rotary ceramic substrate 110 five seconds with the rotating speed of approximately 100 revolutions per seconds, make chromium slurry can be uniformly distributed in ceramic substrate 11 surfaces; C. the ceramic substrate 11 that is coated with chromium slurry is placed in heater, is heated to 250 ℃ with the speed of 4 ℃/min, be incubated after 1 hour, close heater power supply, cool to room temperature with the furnace, obtain metallic chromium layer 13.
(4) on metallic chromium layer 13, utilize ZnO inculating crystal layer that magnetron sputtering method growth thickness is 100nm as catalyst layer 14; Particularly, respectively ZnO target, substrate are fixed in magnetron sputtering vacuum chamber, the distance of adjusting both is 10cm; Vacuumize, vacuum degree reaches 4.5 × 10
-4pa, is heated to 200 ℃, passes into argon gas and oxygen mixed gas (mass ratio is 1: 1) that flow is 10sccm, makes vacuum chamber pressure to 0.4Pa, with the sputtering power sputtering target material 2h of 30W, naturally cools to room temperature, obtains ZnO inculating crystal layer 14;
(5) by the substrate 11 for preparing catalyst layer 14 at 50 ℃, in acetone, sonic oscillation 50min removes the resist PMMA on substrate 11 surfaces;
(6) on ZnO inculating crystal layer 14, utilizing chemical vapour deposition technique growing height is the ZnO nanorod 15 of 5 μ m, obtains field-transmitting cathode.Particularly, the substrate 11 for preparing ZnO inculating crystal layer is fixed in chemical vapor depsotition equipment, the Zn powder that is 99.9% by purity is placed in the alumina crucible of chemical vapor depsotition equipment, and passing into flow and be the argon gas of 55sccm and the oxygen of 0.8sccm to pressure in vacuum chamber is 1.33 × 10
5pA, by crucible heating to 600 ℃, stops heating after deposition 60min with the speed of 5 ℃/min, obtains field-transmitting cathode.
Wherein, the thermal coefficient of expansion of the ceramic substrate in the present embodiment is 9.0 × 10
-6m/K, the thermal coefficient of expansion of chromium is 6.2 × 10
-6m/K, the thermal coefficient of expansion of ZnO nanorod is 3.3 × 10
-6m/K.
By above step, between ZnO nanorod electron emitter 15 and ceramic substrate 11, prepare thickness and be the chromium layer of 0.4 μ m as metal buffer layer, the thermal coefficient of expansion of chromium is between substrate and electron emitter.
Fig. 1 is field-transmitting cathode preparation flow schematic diagram.This resilient coating can improve the matched coefficients of thermal expansion degree between substrate and electron emission volume array, between substrate and electron emission volume array, there is deformation and make contact-making surface inhomogeneous thereby improve, the phenomenon that contact resistance increases, electronic transmitting efficiency and the useful life of finally improving electron emission volume array.
Embodiment 2
A preparation method for field-transmitting cathode, comprises the following steps:
(1) cleaning silicon chip substrate, adopts the method for magnetron sputtering that indium tin oxide films is set; The cleaning operation of described silicon chip substrate is: carry out ultrasonic cleaning with distilled water, acetone, absolute ethyl alcohol, distilled water successively, in every kind of solution, the time of ultrasonic cleaning is 5 ~ 30 minutes;
(2) on the indium tin oxide films surface of substrate, utilize X-ray lithography method to etch and comprise that diameter is 50 ~ 60nm, high 0.3 ~ 0.4 μ m, the cycle is the groove model of several grooves of 5 μ m rectangular arranged; Adopt polymethyl methacrylate (PMMA) as resist;
(3) in the groove of groove model, utilizing magnetron sputtering method to prepare thickness is that the metal platinum layer of 0.5 μ m is as metal buffer layer; Particularly, respectively target platinum, substrate are fixed in magnetron sputtering vacuum chamber, the distance of adjusting both is 10cm; Vacuumize, vacuum degree reaches 4.5 × 10
-4pa, is heated to 200 ℃, passes into the argon gas that flow is 10sccm, makes vacuum chamber pressure to 0.4Pa, with the sputtering power sputtering target material 1h of 30W;
(4) on metal platinum layer, utilize nickel dam that magnetron sputtering method growth thickness is 20nm as catalyst layer; Particularly, will prepare the substrate of metal buffer layer, and catalyst nickel target is fixed in magnetron sputtering vacuum chamber, the distance of adjusting substrate and target is 8cm, is evacuated to 1 × 10
-4pa, passes into the argon gas that flow is 6sccm, is heated to 300 ℃, with the sputtering power sputtering target material of 30W 20 minutes, cools to room temperature with the furnace;
(5) on nickel dam, utilizing chemical vapour deposition technique growing height is the carbon nano-tube of 6 μ m; Particularly, the substrate for preparing catalyst layer is fixed in vacuum chamber, is evacuated to 1 × 10
-2pa, is heated to 700 ℃, maintains 15 minutes, makes nickel sintering; Reaction chamber temperature maintains 700 ℃, and the direct-current discharge of 1KW and the bias voltage of 600V are provided between negative electrode and positive electrode; Pass into mass ratio and be the acetylene of 3: 8 and ammonia 15 minutes; Cool to room temperature with the furnace, carbon nano-tube;
(6) by the substrate of the carbon nano-tube of having grown at 50 ℃, in acetone, sonic oscillation 50min removes the resist PMMA of substrate surface, obtains field-transmitting cathode.
Wherein, the thermal coefficient of expansion of the silicon chip substrate in the present embodiment is 3.0 × 10
-6m/K, the thermal coefficient of expansion of platinum is 9.5 × 10
-6m/K, the thermal coefficient of expansion of nickel is 11 × 10
-6m/K.Fig. 2 is the structural representation of the field-transmitting cathode prepared of the present embodiment.Wherein, 21 is silicon chip substrate, and 22 is layer of titanium metal, and 23 is catalyst nickel dam, and 24 is carbon nano pipe array.
Embodiment 3
A preparation method for field-transmitting cathode, comprises the following steps:
(1) clean glass substrate, adopt the method for magnetron sputtering that indium tin oxide films is set; The cleaning operation of described ceramic substrate is: carry out ultrasonic cleaning with distilled water, acetone, absolute ethyl alcohol, distilled water successively, in every kind of solution, the time of ultrasonic cleaning is 5 ~ 30 minutes;
(2) on the indium tin oxide films surface of substrate, utilize X-ray lithography method to etch and comprise that diameter is 50 ~ 60nm, high 0.3 ~ 0.4 μ m, the cycle is the groove model of several grooves of 5 μ m rectangular arranged; Adopt polymethyl methacrylate (PMMA) as resist;
(3) in the groove of groove model, utilizing silk screen print method to prepare thickness is that the layer of titanium metal of 0.8 μ m is as metal buffer layer; Particularly, prepare titanium slurry, composition is titanium particle, the molten acid anhydride acetic acid esters of organic solvent butyl, adhesive epoxy resin, the substrate surface that it is bitten under silk screen with scraper plate extruding titanium slurry by silk screen plate, again substrate is put into drying box, be heated to 50 ℃, keep 15min, printed layers is dried and removes the organic solvent in slurry;
(4) in layer of titanium metal, utilize cobalt layer that magnetron sputtering method growth thickness is 40nm as catalyst layer; Particularly, will prepare the substrate of metal buffer layer, and catalyst cobalt target is fixed in magnetron sputtering vacuum chamber, the distance of adjusting substrate and target is 8cm, is evacuated to 1 × 10
-4pa, passing into flow is the inert gas argon gas of 6sccm, is heated to 300 ℃, with the sputtering power sputtering target material of 30W 15 minutes, cools to room temperature with the furnace.
(5) on cobalt layer, utilizing chemical vapour deposition technique growing height is the carbon nano-tube of 10 μ m; Particularly, the substrate for preparing metal buffer layer is fixed in vacuum chamber, is evacuated to 1 × 10
-2pa, is heated to 600 ℃, maintains 15 minutes, makes cobalt sintering; Reaction chamber temperature maintains 600 ℃, and the direct-current discharge of 1KW and the bias voltage of 600V are provided between negative electrode and positive electrode; Pass into mass ratio and be the acetylene of 3: 8 and ammonia 25 minutes; Cool to room temperature with the furnace, carbon nano-tube;
(6) by the substrate of the carbon nano-tube of having grown at 50 ℃, in acetone, sonic oscillation 50min removes the resist PMMA of substrate surface, obtains field-transmitting cathode.
Wherein, the thermal coefficient of expansion of the glass substrate in the present embodiment is 4.5 × 10
-6m/K, the thermal coefficient of expansion of titanium is 10.8 × 10
-6m/K, the thermal coefficient of expansion of cobalt is 12.5 × 10
-6m/K.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a field-transmitting cathode, comprise substrate, be arranged on the conductive film on substrate and be formed on the electron emission volume array on conductive film, it is characterized in that, between described conductive film and electron emission volume array, being provided with a thickness is the metal buffer layer of 0.4 ~ 0.8 μ m, and the material of described metal buffer layer is metal or the metallic compound of thermal coefficient of expansion between described substrate and described electron emission volume array.
2. field-transmitting cathode as claimed in claim 1, is characterized in that, the material of described metal buffer layer is crome metal, titanium, platinum or its compound.
3. field-transmitting cathode as claimed in claim 1, is characterized in that, the particle size of described metal or metallic compound is 8 ~ 15nm.
4. field-transmitting cathode as claimed in claim 1, is characterized in that, described substrate is silicon chip, pottery or glass; Described conductive film is indium tin oxide films; Described electron emission volume array is ZnO nano-rod array or carbon nano pipe array.
5. a preparation method for field-transmitting cathode, is characterized in that, comprises the following steps:
(1) provide clean substrate, prepare layer of conductive film at described substrate surface;
(2) go out required groove model in described conductive film surface etch;
(3) in the groove of described groove model, prepare the metal buffer layer that a thickness is 0.4 ~ 0.8 μ m;
(4) at superficial growth one catalyst layer of described metal buffer layer;
(5) the electron emission volume array of growing on described catalyst layer, obtains field-transmitting cathode;
Wherein, the material of described metal buffer layer is metal or the metallic compound of thermal coefficient of expansion between described substrate and described electron emission volume array.
6. the preparation method of field-transmitting cathode as claimed in claim 5, is characterized in that, the material of described metal buffer layer is crome metal, titanium, platinum or its compound.
7. the preparation method of field-transmitting cathode as claimed in claim 5, is characterized in that, the particle size of described metal or metallic compound is 8 ~ 15nm.
8. the preparation method of field-transmitting cathode as claimed in claim 5, is characterized in that, described metal buffer layer adopts spin-coating method, spraying process, silk screen print method or magnetron sputtering method preparation.
9. the preparation method of field-transmitting cathode as claimed in claim 5, is characterized in that, described substrate is silicon chip, pottery or glass; Described conductive film is indium tin oxide films; Described electron emission volume array is ZnO nano-rod array or carbon nano pipe array.
10. the preparation method of field-transmitting cathode as claimed in claim 5, is characterized in that, described catalyst layer adopts magnetron sputtering method preparation, and described electron emission volume array adopts chemical vapour deposition technique preparation.
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