CN103774148B - Semiconductor technology normal temperature aluminium etch process - Google Patents
Semiconductor technology normal temperature aluminium etch process Download PDFInfo
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- CN103774148B CN103774148B CN201110458141.4A CN201110458141A CN103774148B CN 103774148 B CN103774148 B CN 103774148B CN 201110458141 A CN201110458141 A CN 201110458141A CN 103774148 B CN103774148 B CN 103774148B
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Abstract
<b> the present invention relates to a kind of semiconductor technology normal temperature aluminium etch process, comprises the steps: a) set-up procedure: ready reaction container, deionized water, hydrochloric acid, nitric acid, anion surfactant; B) preparation process: add deionized water, hydrochloric acid, nitric acid and for carrying the anion surfactant of the etching reactant in etching liquid successively in described reaction vessel; C) preparation process: leave standstill in room temperature after uniform stirring; D) etching process: put into aluminium sample to be etched and carry out etching reaction.</b><bGreatT.Gre aT.GT the present invention aims to provide additive method to reach the object of effectively etching aluminium, to reach range of choice when expanding aluminium etching, </b><bGreatT.Gre aT.GT thus make the kind of the medicine effectively carving aluminium more diversified, to meet the needs under different situations.</b>
Description
Technical field
the present invention relates to field of semiconductor manufacture.
Background technology
at the temperature that the method being generally used in prior art etching aluminium is all more than 70 degree, use strong phosphoric acid, the etching solution that nitric acid and acetic acid form by a certain percentage etches aluminium.The temperature of this processing procedure to etching has strict requirement, needs to propose a kind of brand-new processing procedure to improve current situation.
Summary of the invention
the present invention aims to provide additive method to reach the object of effectively etching aluminium, to reach range of choice when expanding aluminium etching, thus makes the kind of the medicine effectively carving aluminium more diversified, to meet the needs under different situations.
in order to reach above-mentioned technical purpose, the invention provides a kind of semiconductor technology normal temperature aluminium etch process, comprising the steps:
a) set-up procedure: ready reaction container, deionized water, hydrochloric acid, nitric acid, anion surfactant;
b) preparation process: add deionized water, hydrochloric acid, nitric acid and for carrying the anion surfactant of the etching reactant in etching liquid successively in described reaction vessel;
c) preparation process: leave standstill in room temperature after uniform stirring;
d) etching process: put into aluminium sample to be etched and carry out etching reaction.
preferably, described concentration of hydrochloric acid is 36%-38%.
preferably, described concentration of nitric acid is 69%-72%.
preferably, described anion surfactant comprises at least one in sodium laurylsulfonate, sodium lauryl sulphate, Sodium dodecylbenzene sulfonate.
preferably, described hydrochloric acid and the proportional range of nitric acid are between 5:1 to 10:1, and the volume of described deionized water equals described hydrochloric acid and nitric acid volume summation; When liquor capacity rises in scope 1 to 2, add the anion surfactant of 1.5 to 2 grams.
further, when the ratio of described hydrochloric acid and nitric acid is 5:1, when being added with the sodium laurylsulfonate of 1.8g in solution, best results.
preferably, at room temperature leave standstill until and equilibrium at room temperature after stirring.
owing to adopting technique scheme, the present invention uses hydrochloric acid and nitric acid as the bulk composition of etching liquid, add anion surfactant as the delivery mechanism to etching reactant in etching liquid, thus the present invention at room temperature just has good etching effect, process window is large simultaneously.
Accompanying drawing explanation
accompanying drawing 1 is the schema according to semiconductor technology normal temperature aluminium etch process of the present invention.
Embodiment
below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, can be easier to make advantages and features of the invention be readily appreciated by one skilled in the art, thus more explicit defining is made to protection scope of the present invention.
shown in accompanying drawing 1, it is the schema of semiconductor technology normal temperature aluminium etch process according to the present invention.
in the present embodiment in order to reach above-mentioned technical purpose, the invention provides a kind of semiconductor technology normal temperature aluminium etch process, comprise the steps:
a) set-up procedure: ready reaction container, deionized water, hydrochloric acid, nitric acid, anion surfactant;
b) preparation process: add deionized water, hydrochloric acid, nitric acid and for carrying the anion surfactant of the etching reactant in etching liquid successively in described reaction vessel;
c) preparation process: leave standstill in room temperature after uniform stirring;
d) etching process: put into aluminium sample to be etched and carry out etching reaction.
wherein, concentration of hydrochloric acid is 36%-38%, and concentration of nitric acid is 69%-72%, and anion surfactant comprises at least one in sodium laurylsulfonate, sodium lauryl sulphate, Sodium dodecylbenzene sulfonate.The proportional range of hydrochloric acid and nitric acid is between 5:1 to 10:1; The amount used of deionized water is the same with nitric acid volume summation with hydrochloric acid on volume; When liquor capacity rises in scope 1 to 2, the anion surfactant of 1.5 to 2 grams can be added.When liquor capacity changes, can add in proportion according to above standard or reduce the amount of anion surfactant.Through test, best by effect when the hydrochloric acid of 5:1 and nitric acid (in this test use 500ml hydrochloric acid and 100ml nitric acid) and 1.8g sodium laurylsulfonate.
need to add solution after preparation to stir, at room temperature leave standstill after 10 minutes until with equilibrium at room temperature after can use, aluminium sample to be etched carries out etching reaction, and reaction conditions is room temperature, reaction times adjusts according to the thickness of aluminizing, during reaction directly by pending product submergence in the solution.Aluminium film for 1000 dust thickness can etch totally for 10 minutes, adds 5 minutes quarters after 10 minutes again, and quarter, degree was still within the scope of acceptable excessively.
owing to adopting technique scheme, the present invention uses hydrochloric acid and nitric acid as the bulk composition of etching liquid, add anion surfactant as the delivery mechanism to etching reactant in etching liquid, thus the present invention at room temperature just has good etching effect, process window is large simultaneously.
above embodiment is only for illustrating technical conceive of the present invention and feature; its object is to allow person skilled in the art understand content of the present invention and to be implemented; can not limit the scope of the invention with this; all equivalences done according to spirit of the present invention change or modify, and all should be encompassed in protection scope of the present invention.Easily find out as those of ordinary skill in the art, method given in the present invention, after making simple change, is also applicable to the metalloid that other chemical property of etching are more active equally.
Claims (6)
1. a semiconductor technology normal temperature aluminium etch process, is characterized in that, comprise the steps:
A) set-up procedure: ready reaction container, deionized water, hydrochloric acid, nitric acid, anion surfactant; Wherein, anion surfactant comprises at least one in sodium laurylsulfonate, sodium lauryl sulphate, Sodium dodecylbenzene sulfonate;
B) preparation process: add deionized water, hydrochloric acid, nitric acid and for carrying the anion surfactant of the etching reactant in etching liquid successively in described reaction vessel;
C) preparation process: leave standstill in room temperature after uniform stirring;
D) etching process: put into aluminium sample to be etched and carry out etching reaction.
2. semiconductor technology normal temperature aluminium etch process according to claim 1, is characterized in that: described concentration of hydrochloric acid is 36%-38%.
3. semiconductor technology normal temperature aluminium etch process according to claim 1, is characterized in that: described concentration of nitric acid is 69%-72%.
4. semiconductor technology normal temperature aluminium etch process according to claim 1, is characterized in that: described hydrochloric acid and the proportional range of nitric acid are between 5:1 to 10:1, and the volume of described deionized water equals described hydrochloric acid and nitric acid volume summation; When liquor capacity rises in scope 1 to 2, add the anion surfactant of 1.5 to 2 grams.
5. semiconductor technology normal temperature aluminium etch process according to claim 4, is characterized in that: described hydrochloric acid and the ratio of nitric acid are 5:1, are added with the sodium laurylsulfonate of 1.8g in solution.
6. semiconductor technology normal temperature aluminium etch process according to claim 1, is characterized in that: at room temperature leave standstill until and equilibrium at room temperature after stirring.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110458141.4A CN103774148B (en) | 2011-12-31 | 2011-12-31 | Semiconductor technology normal temperature aluminium etch process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110458141.4A CN103774148B (en) | 2011-12-31 | 2011-12-31 | Semiconductor technology normal temperature aluminium etch process |
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| CN103774148A CN103774148A (en) | 2014-05-07 |
| CN103774148B true CN103774148B (en) | 2016-03-16 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1743507A (en) * | 2005-09-21 | 2006-03-08 | 中国海洋大学 | Chemical etching solution for aluminium and aluminium alloy |
| CN101205614A (en) * | 2006-12-22 | 2008-06-25 | 深圳富泰宏精密工业有限公司 | Chemical etching liquor for aluminium and aluminum alloy |
| CN101314851A (en) * | 2008-07-22 | 2008-12-03 | 上海工程技术大学 | Fine aluminium sheet material corrosive agent |
| CN102108512A (en) * | 2009-12-25 | 2011-06-29 | 比亚迪股份有限公司 | Chemical etching liquid for metals and etching method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3297860B2 (en) * | 1998-01-05 | 2002-07-02 | 日本航空電子工業株式会社 | Acid etching solution for aluminum alloy or aluminum die casting |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1743507A (en) * | 2005-09-21 | 2006-03-08 | 中国海洋大学 | Chemical etching solution for aluminium and aluminium alloy |
| CN101205614A (en) * | 2006-12-22 | 2008-06-25 | 深圳富泰宏精密工业有限公司 | Chemical etching liquor for aluminium and aluminum alloy |
| CN101314851A (en) * | 2008-07-22 | 2008-12-03 | 上海工程技术大学 | Fine aluminium sheet material corrosive agent |
| CN102108512A (en) * | 2009-12-25 | 2011-06-29 | 比亚迪股份有限公司 | Chemical etching liquid for metals and etching method |
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Address after: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant after: FOCUS LIGHTINGS TECHNOLOGY CO., LTD. Address before: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant before: Focus Lightings Tech Inc. |
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