CN103774109B - A kind of supersensitive Fe-Y-B metallic film and preparation method thereof - Google Patents
A kind of supersensitive Fe-Y-B metallic film and preparation method thereof Download PDFInfo
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- CN103774109B CN103774109B CN201410039013.XA CN201410039013A CN103774109B CN 103774109 B CN103774109 B CN 103774109B CN 201410039013 A CN201410039013 A CN 201410039013A CN 103774109 B CN103774109 B CN 103774109B
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Abstract
The invention discloses a kind of supersensitive Fe-Y-B metallic film and preparation method thereof. Its composition Fe, Y, B respectively 67 ~ 73? at.%, 7��11? at.%, 14��20? at.%, for amorphous state. Preparation method includes: Fe, Y, B raw metal is synthesized target, is placed on the target position of the multi-target magnetic control sputtering filming equipment in vacuum environment; By cavity evacuation, it is filled with Ar2, regulate intracavity air pressure, carry out pre-sputtering; Sputter afterwards, silicon single-sided polishing sheet is taken out, obtains Fe-Y-B metallic film. The Fe-Y-B metallic film of the present invention is amorphous state, adopts zigzag tread patterns pattern, Weak magentic-field has supersensitive magneto-impedance effect, can be used for the manufacture of Magnetic Sensor.
Description
Technical field
The present invention relates to a kind of metallic film and preparation method thereof, particularly relate to a kind of supersensitive Fe-Y-B metallic film and preparation method thereof.
Background technology
Non-crystaline amorphous metal is an important branch of non-crystalline material, and it is different from traditional oxide glass and amorphous semiconductor, is not with covalent bond, ionic bond or hydrogen bonded between atom, but combines with metallic bond, and therefore it has the characteristic of many metal materials; On the other hand, being absent from the defects such as crystal boundary, dislocation due to it, amorphous alloy has again the performance that many tradition crystal alloy do not have: high yield strength, hardness and wear resistance, bigger elastic limit, excellent corrosion resistance, outstanding magnetic property etc.
The fields such as along with non-crystaline amorphous metal deepening continuously and the continuous expansion of application in performance, Study on Preparation, part non-crystalline material has moved towards commercialization, is applied to electric power, electronics, chemical industry, military. Fe-based amorphous, nanometer crystal alloy has the soft magnet performance of excellence, amorphous simultaneously, MI (magnetoimpedance) effect of nano crystal soft magnetic material has high sensitivity, the advantages such as fast-response, can relate to the making of magneto-dependent sensor and the application of magnetic recording head aspect, be a kind of functional material with development prospect.
It is by a sample coil that zigzag tread patterns measures (actinobolia), links sample and forms equiva lent impedance element. Zigzag tread patterns method is adopted to extract the signal of impedance variation. Institute's test sample product are put in a little solenoid coil by measurement process, and make the long axis direction of sample be parallel to solenoidal axially, then this coil being connected into alternating message source, the size of current that coil midstream is crossed is monitored by the voltage at the resistance two ends connected in circuit. The change of equiva lent impedance element impedance value embodies the character of sample.
The definition of the relevant parameter weighing magneto-impedance effect is as follows:
Magnetoimpedance ratio:
Sensitivity ��:
Wherein, Z represents the impedance of material, ZHexAnd ZHmaxAdded maximum field H when to be DC bias magnetic field respectively be H and experimentmaxTime the impedance of material, that �� Z represents is material added maximum field H when DC bias magnetic field is H and experimentmaxTime the difference of impedance, FWHM is the halfwidth of impedance curve.
Summary of the invention
In order to solve the problem in background technology, the present invention proposes a kind of supersensitive Fe-Y-B metallic film and preparation method thereof, takes suitable technique, it is possible to obtain hypersensitivity under zigzag tread patterns pattern.
It is an object of the invention to be achieved through the following technical solutions:
One, a kind of supersensitive Fe-Y-B metallic film
Its constituent Fe, Y, B respectively 67��73at.%, 7��11at.%, 14��20at.%.
Described Fe-Y-B metallic film is amorphous state, length and width respectively 12 millimeters and 2 millimeters.
Described Fe-Y-B metallic film is for the manufacture of Magnetic Sensor.
The halfwidth of the magnetoimpedance curve of described Fe-Y-B metallic film is 12.61��13.40A/m, and magnetoimpedance sensitivity is 0.40%��0.53% (A/m)-1��
Two, the preparation method of a kind of supersensitive Fe-Y-B metallic film:
1) Fe, Y, B raw metal synthesis target that quality purity will be adopted more than 98%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 102��103The silicon single-sided polishing sheet of �� cm, by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment is evacuated to intracavity air pressure lower than 5.5 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1��2Pa, carries out the pre-sputtering of 1��2min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 330-350V, and sputtering duration is 30min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
Described step 1) in the crystal plane direction of silicon one side of silicon single-sided polishing sheet be (100).
Described step 4) the silicon single-sided polishing sheet that obtains is processed as the length and width respectively strip sample of 12 millimeters and 2 millimeters.
Described step 4) in silicon single-sided polishing sheet through laser scribing machine.
Described step 4) halfwidth of the magnetoimpedance curve of Fe-Y-B metallic film that obtains is 12.61��13.40A/m, magnetoimpedance sensitivity is 0.40%��0.53% (A/m)-1��
The present invention has the effect that
Under certain driving frequency, present invention variation tendency of impedance curve under atomic weak external magnetic field is precipitous, namely there is higher sensitivity, not finding that other single layer metal firms has can the sensitivity of analogy, can be used for magnetic sensing technology aspect, specific to such as flux detection element, the manufacture of micro sensing head.
Development along with information technology and Computer Control Technology, modern advanced measurement technology and control system, industrial instrumentation, in electronic communication equipment and Military Application field, it is required for novel high-performance magnetism sensor, simultaneously for the size of magneto-dependent sensor, sensitivity, heat stability and power consumption etc. it is also proposed increasing requirement. Relative to strip, block etc., the magnetoimpedance ratio of thin film be strictly little a lot, but due to the nanorize of device fabrication, microminiaturized trend, thin film advantageous advantage in application also embodies increasingly. Due to the fact that the sensitivity characteristics of its excellence, have good application prospect.
Accompanying drawing explanation
Fig. 1 is the XRD figure of the Fe-Y-B metallic film according to embodiment 1 preparation.
Fig. 2 is that the zigzag tread patterns impedance ratio of the Fe-Y-B metallic film according to embodiment 1 preparation is with drive current variations figure.
Fig. 3 is that the magnetoimpedance under characteristic frequency of the Fe-Y-B metallic film according to embodiment 1 preparation is with outfield variation diagram.
Detailed description of the invention
Below in conjunction with drawings and Examples, the invention will be further described.
Constituent Fe, Y, B respectively 67��73at.%, 7��11at.%, the 14��20at.% of the Fe-Y-B metallic film of the present invention.
Described Fe-Y-B metallic film is amorphous state, length and width respectively 12 millimeters and 2 millimeters.
Described Fe-Y-B metallic film is for the manufacture of Magnetic Sensor.
The halfwidth of the magnetoimpedance curve of described Fe-Y-B metallic film is 12.61��13.40A/m, and magnetoimpedance sensitivity is 0.4%��0.53% (A/m)-1��
The preparation method of the Fe-Y-B metallic film of the present invention comprises the following steps:
1) Fe, Y, B raw metal synthesis target that quality purity will be adopted more than 98%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 102��103The silicon single-sided polishing sheet of �� cm, by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment is evacuated to intracavity air pressure lower than 5.5 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1��2Pa, carries out the pre-sputtering of 1��2min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 330-350V, and sputtering duration is 30min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
Step 1) in the crystal plane direction of silicon one side of silicon single-sided polishing sheet be (100).
Step 4) the silicon single-sided polishing sheet that obtains is processed as the length and width respectively strip sample of 12 millimeters and 2 millimeters.
Step 4) in silicon single-sided polishing sheet through laser scribing machine.
Step 4) halfwidth of the magnetoimpedance curve of Fe-Y-B metallic film that obtains is 12.61��13.40A/m, magnetoimpedance sensitivity is 0.40%��0.53% (A/m)-1��
The Fe-Y-B metallic film that the present invention is obtained by the method for magnetron sputtering method adopts zigzag tread patterns pattern, is namely coiled into coil with enamel-covered wire, and the sample of cutting is inserted coil. Thered is provided the alternating current of 10mA by driving coil by HP4294APrecisionImpedanceAnalyzer (precise impedance analyser), produce one and axially in parallel with thin film exchange driving field. Alternating current is not directed through sample, thus efficiently avoid the produced Joule heat loss of sample itself. External magnetic field is then produced by the Helmholtz coil axial and vertical with direction, earth's magnetic field axially along thin film. The coil of sample and sample will be loaded collectively regarded as an equiva lent impedance, measure the impedance change behavior with external magnetic field at coil two ends under action of alternating magnetic field, it is thus achieved that the magnetosensitive signal of superelevation.
Embodiments of the invention are as follows:
Embodiment 1:
1) by Y that Fe that quality purity is 99.9%, quality purity are 99.9% and tri-kinds of raw metals synthesis targets of B that quality purity is 99.5%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 102The silicon single-sided polishing sheet of �� cm, the crystal plane direction of its silicon one side is (100);By silicon single-sided polishing sheet burnishing surface down, it is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment being evacuated to intracavity air pressure is 5.1 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1.4Pa, carries out the pre-sputtering of 2min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 350V, and sputtering duration is 30min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
5) the obtained single-sided polishing sheet with Fe-Y-B metallic film is machined as the length and width respectively strip sample of 12 millimeters and 2 millimeters through laser scribing.
6) it is coiled into coil with enamel-covered wire, the sample of cutting is inserted coil. Thered is provided the alternating current of 10mA by driving coil by HP4294APrecisionImpedanceAnalyzer (precise impedance analyser), produce one and axially in parallel with thin film exchange driving field. External magnetic field is then produced by the Helmholtz coil axial and vertical with direction, earth's magnetic field axially along thin film. The coil of sample and sample will be loaded collectively regarded as an equiva lent impedance, the impedance at measurement coil two ends under action of alternating magnetic field is with the change behavior of external magnetic field, record when driving frequency is 64.04kHz, the Fe-Y-B metallic film of present invention variation tendency of (less than 25A/m) impedance curve under atomic weak external magnetic field presents very precipitous, namely has sensitivity [��=0.53% (A/m) of superelevation-1], halfwidth is 12.61A/m.
Embodiment 2:
1) by Y that Fe that quality purity is 99.9%, quality purity are 99.9% and tri-kinds of raw metals synthesis targets of B that quality purity is 99.5%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 102The silicon single-sided polishing sheet of �� cm, the crystal plane direction of its silicon one side is (100), by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment being evacuated to intracavity air pressure is 4.8 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1Pa, carries out the pre-sputtering of 2min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 340V, and sputtering duration is 30min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
5) the obtained single-sided polishing sheet with Fe-Y-B metallic film is machined as the length and width respectively strip sample of 12 millimeters and 2 millimeters through laser scribing.
6) it is coiled into coil with enamel-covered wire, the sample of cutting is inserted coil. Thered is provided the alternating current of 10mA by driving coil by HP4294APrecisionImpedanceAnalyzer (precise impedance analyser), produce one and axially in parallel with thin film exchange driving field.External magnetic field is then produced by the Helmholtz coil axial and vertical with direction, earth's magnetic field axially along thin film. The coil of sample and sample will be loaded collectively regarded as an equiva lent impedance, the impedance at measurement coil two ends under action of alternating magnetic field is with the change behavior of external magnetic field, record when driving frequency is 64.04kHz, the Fe-Y-B metallic film of present invention variation tendency of (less than 25A/m) impedance curve under atomic weak external magnetic field presents very precipitous, namely has sensitivity [��=0.48% (A/m) of superelevation-1], halfwidth is 13.21A/m.
Embodiment 3:
1) by Y that Fe that quality purity is 99.9%, quality purity are 99.9% and tri-kinds of raw metals synthesis targets of B that quality purity is 99.5%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 103The silicon single-sided polishing sheet of �� cm, the crystal plane direction of its silicon one side is (100), by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment being evacuated to intracavity air pressure is 5.5 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1Pa, carries out the pre-sputtering of 1min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 350V, and sputtering duration is 30min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
5) the obtained single-sided polishing sheet with Fe-Y-B metallic film is machined as the length and width respectively strip sample of 12 millimeters and 2 millimeters through laser scribing.
6) it is coiled into coil with enamel-covered wire, the sample of cutting is inserted coil. Thered is provided the alternating current of 10mA by driving coil by HP4294APrecisionImpedanceAnalyzer (precise impedance analyser), produce one and axially in parallel with thin film exchange driving field. External magnetic field is then produced by the Helmholtz coil axial and vertical with direction, earth's magnetic field axially along thin film. The coil of sample and sample will be loaded collectively regarded as an equiva lent impedance, the impedance at measurement coil two ends under action of alternating magnetic field is with the change behavior of external magnetic field, record when driving frequency is 64.04kHz, the Fe-Y-B metallic film of present invention variation tendency of (less than 25A/m) impedance curve under atomic weak external magnetic field presents very precipitous, namely has sensitivity [��=0.50% (A/m) of superelevation-1], halfwidth is 13.40A/m.
Embodiment 4:
1) by Y that Fe that quality purity is 99.9%, quality purity are 99.9% and tri-kinds of raw metals synthesis targets of B that quality purity is 99.5%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 103The silicon single-sided polishing sheet of �� cm, the crystal plane direction of its silicon one side is (100), by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment being evacuated to intracavity air pressure is 4.7 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 2Pa, carries out the pre-sputtering of 2min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 350V, and sputtering duration is 30min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
5) the obtained single-sided polishing sheet with Fe-Y-B metallic film is machined as the length and width respectively strip sample of 12 millimeters and 2 millimeters through laser scribing.
6) it is coiled into coil with enamel-covered wire, the sample of cutting is inserted coil. Thered is provided the alternating current of 10mA by driving coil by HP4294APrecisionImpedanceAnalyzer (precise impedance analyser), produce one and axially in parallel with thin film exchange driving field. External magnetic field is then produced by the Helmholtz coil axial and vertical with direction, earth's magnetic field axially along thin film. The coil of sample and sample will be loaded collectively regarded as an equiva lent impedance, the impedance at measurement coil two ends under action of alternating magnetic field is with the change behavior of external magnetic field, record when driving frequency is 64.04kHz, the Fe-Y-B metallic film of present invention variation tendency of (less than 25A/m) impedance curve under atomic weak external magnetic field presents very precipitous, namely has sensitivity [��=0.46% (A/m) of superelevation-1], halfwidth is 12.89A/m.
Embodiment 5:
1) by Y that Fe that quality purity is 99.9%, quality purity are 99.9% and tri-kinds of raw metals synthesis targets of B that quality purity is 99.5%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, thickness is 0.43 millimeter, resistivity is the silicon single-sided polishing sheet of 500 �� cm, the crystal plane direction of its silicon one side is (100), by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulate substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment being evacuated to intracavity air pressure is 5.5 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1Pa, carries out the pre-sputtering of 1min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 330V, and sputtering duration is 30min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
5) the obtained single-sided polishing sheet with Fe-Y-B metallic film is machined as the length and width respectively strip sample of 12 millimeters and 2 millimeters through laser scribing.
6) it is coiled into coil with enamel-covered wire, the sample of cutting is inserted coil. Thered is provided the alternating current of 10mA by driving coil by HP4294APrecisionImpedanceAnalyzer (precise impedance analyser), produce one and axially in parallel with thin film exchange driving field. External magnetic field is then produced by the Helmholtz coil axial and vertical with direction, earth's magnetic field axially along thin film.The coil of sample and sample will be loaded collectively regarded as an equiva lent impedance, the impedance at measurement coil two ends under action of alternating magnetic field is with the change behavior of external magnetic field, record when driving frequency is 64.04kHz, the Fe-Y-B metallic film of present invention variation tendency of (less than 25A/m) impedance curve under atomic weak external magnetic field presents very precipitous, namely has sensitivity [��=0.40% (A/m) of superelevation-1], halfwidth is 13.40A/m.
Embodiment 6:
1) by Y that Fe that quality purity is 99.9%, quality purity are 99.9% and tri-kinds of raw metals synthesis targets of B that quality purity is 99.5%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 102��103The silicon single-sided polishing sheet of �� cm, the crystal plane direction of its silicon one side is (100), by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment being evacuated to intracavity air pressure is 5.0 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1Pa, carries out the pre-sputtering of 2min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 330V, and sputtering duration is 30min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
5) the obtained single-sided polishing sheet with Fe-Y-B metallic film is machined as the length and width respectively strip sample of 12 millimeters and 2 millimeters through laser scribing.
6) it is coiled into coil with enamel-covered wire, the sample of cutting is inserted coil. Thered is provided the alternating current of 10mA by driving coil by HP4294APrecisionImpedanceAnalyzer (precise impedance analyser), produce one and axially in parallel with thin film exchange driving field. External magnetic field is then produced by the Helmholtz coil axial and vertical with direction, earth's magnetic field axially along thin film. The coil of sample and sample will be loaded collectively regarded as an equiva lent impedance, the impedance at measurement coil two ends under action of alternating magnetic field is with the change behavior of external magnetic field, record when driving frequency is 64.04kHz, the Fe-Y-B metallic film of present invention variation tendency of (less than 25A/m) impedance curve under atomic weak external magnetic field presents very precipitous, namely has sensitivity [��=0.50% (A/m) of superelevation-1], halfwidth is 13.01A/m.
Embodiment 7:
1) by Y that Fe that quality purity is 99.9%, quality purity are 99.9% and tri-kinds of raw metals synthesis targets of B that quality purity is 99.5%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 103The silicon single-sided polishing sheet of �� cm, the crystal plane direction of its silicon one side is (100), by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment being evacuated to intracavity air pressure is 5.5 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1Pa, carries out the pre-sputtering of 1min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 340V, and sputtering duration is 30min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
5) the obtained single-sided polishing sheet with Fe-Y-B metallic film is machined as the length and width respectively strip sample of 12 millimeters and 2 millimeters through laser scribing.
6) it is coiled into coil with enamel-covered wire, the sample of cutting is inserted coil. Thered is provided the alternating current of 10mA by driving coil by HP4294APrecisionImpedanceAnalyzer (precise impedance analyser), produce one and axially in parallel with thin film exchange driving field. External magnetic field is then produced by the Helmholtz coil axial and vertical with direction, earth's magnetic field axially along thin film. The coil of sample and sample will be loaded collectively regarded as an equiva lent impedance, the impedance at measurement coil two ends under action of alternating magnetic field is with the change behavior of external magnetic field, record when driving frequency is 64.04kHz, the Fe-Y-B metallic film of present invention variation tendency of (less than 25A/m) impedance curve under atomic weak external magnetic field presents very precipitous, namely has sensitivity [��=0.50% (A/m) of superelevation-1], halfwidth is 13.06A/m.
Embodiment 8:
1) by Y that Fe that quality purity is 99.9%, quality purity are 99.9% and tri-kinds of raw metals synthesis targets of B that quality purity is 99.5%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 102The silicon single-sided polishing sheet of �� cm, the crystal plane direction of its silicon one side is (100), by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment is evacuated to intracavity air pressure lower than 5.5 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1Pa, carries out the pre-sputtering of 2min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 330V, and sputtering duration is 30min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
5) the obtained single-sided polishing sheet with Fe-Y-B metallic film is machined as the length and width respectively strip sample of 12 millimeters and 2 millimeters through laser scribing.
6) it is coiled into coil with enamel-covered wire, the sample of cutting is inserted coil. Thered is provided the alternating current of 10mA by driving coil by HP4294APrecisionImpedanceAnalyzer (precise impedance analyser), produce one and axially in parallel with thin film exchange driving field. External magnetic field is then produced by the Helmholtz coil axial and vertical with direction, earth's magnetic field axially along thin film.The coil of sample and sample will be loaded collectively regarded as an equiva lent impedance, the impedance at measurement coil two ends under action of alternating magnetic field is with the change behavior of external magnetic field, record when driving frequency is 64.04kHz, the Fe-Y-B metallic film of present invention variation tendency of (less than 25A/m) impedance curve under atomic weak external magnetic field presents very precipitous, namely has sensitivity [��=0.50% (A/m) of superelevation-1], halfwidth is 13.01A/m.
Embodiment 9:
1) by Y that Fe that quality purity is 99.9%, quality purity are 99.9% and tri-kinds of raw metals synthesis targets of B that quality purity is 99.5%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 103The silicon single-sided polishing sheet of �� cm, the crystal plane direction of its silicon one side is (100), by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment being evacuated to intracavity air pressure is 5.3 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1.6Pa, carries out the pre-sputtering of 2min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 345V, and sputtering duration is 30min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
5) the obtained single-sided polishing sheet with Fe-Y-B metallic film is machined as the length and width respectively strip sample of 12 millimeters and 2 millimeters through laser scribing.
6) it is coiled into coil with enamel-covered wire, the sample of cutting is inserted coil. Thered is provided the alternating current of 10mA by driving coil by HP4294APrecisionImpedanceAnalyzer (precise impedance analyser), produce one and axially in parallel with thin film exchange driving field. External magnetic field is then produced by the Helmholtz coil axial and vertical with direction, earth's magnetic field axially along thin film. The coil of sample and sample will be loaded collectively regarded as an equiva lent impedance, the impedance at measurement coil two ends under action of alternating magnetic field is with the change behavior of external magnetic field, record when driving frequency is 64.04kHz, the Fe-Y-B metallic film of present invention variation tendency of (less than 25A/m) impedance curve under atomic weak external magnetic field presents very precipitous, namely has sensitivity [��=0.49% (A/m) of superelevation-1], halfwidth is 12.99A/m.
9 above embodiments show, obtained Fe-Y-B noncrystal membrane is under zigzag tread patterns pattern, atomic weak external magnetic field (less than 25A/m) impedance curve variation tendency clearly, its sensitivity is higher, and namely �� is 0.40��0.53% (A/m)-1, halfwidth range for 12.61��13.40A/m.
Implementing gained sample as shown in Figure 1 is amorphous at As-deposited state.
Under low-intensity magnetic field, be there is hypersensitivity by the known enforcement gained sample of Fig. 2 and Fig. 3.
Above-described embodiment is used for illustrating the present invention, rather than limits the invention, in the spirit and scope of the claims of the present invention, and any amendment that the present invention is made and change, both fall within protection scope of the present invention.
Claims (8)
1. a supersensitive Fe-Y-B metallic film, it is characterised in that: its constituent Fe, Y, B respectively 67��73at.%, 7��11at.%, 14��20at.%, each constituent content sum is equal to 100%; Described Fe-Y-B metallic film is amorphous state, length and width respectively 12 millimeters and 2 millimeters.
2. a kind of supersensitive Fe-Y-B metallic film according to claim 1, it is characterised in that: described Fe-Y-B metallic film is for the manufacture of Magnetic Sensor.
3. a kind of supersensitive Fe-Y-B metallic film according to claim 1, it is characterized in that: the halfwidth of the magnetoimpedance curve of described Fe-Y-B metallic film is 12.61��13.40A/m, magnetoimpedance sensitivity is 0.40%��0.53% (A/m)-1��
4. the preparation method for preparing a kind of supersensitive Fe-Y-B metallic film of the arbitrary described metallic film of claims 1 to 3, it is characterised in that comprise the following steps:
1) Fe, Y, B raw metal synthesis target that quality purity will be adopted more than 98%, the proportioning of Fe, Y, B is 76.2at%, 6.5at%, 17.3at%, and being placed in end vacuum environment is 2 �� 10-5On the target position of the multi-target magnetic control sputtering filming equipment of Pa, the substrate of target as sputter thin film adopts diameter to be 50.8 millimeters, and thickness is 0.43 millimeter, and resistivity is 102��103The silicon single-sided polishing sheet of �� cm, by silicon single-sided polishing sheet burnishing surface down, is arranged in substrate frame, regulates substrate frame so that silicon single-sided polishing sheet is 80mm to the distance of target surface;
2) cavity of multi-target magnetic control sputtering filming equipment is evacuated to intracavity air pressure lower than 5.5 �� 10-4Pa, is then charged with the percent by volume Ar higher than 98%2, Molecular regulator pump flapper valve to intracavity air pressure is 1��2Pa, carries out the pre-sputtering of 1��2min;
3) sputtering after pre-sputtering, sputtering current during sputtering is 0.15A, and sputtering voltage is 330-350V, and sputtering duration is 30min, and keeping substrate frame revolution speed in sputter procedure is 10 revs/min;
4) the silicon single-sided polishing sheet after being sputtered by multi-target magnetic control sputtering filming equipment takes out, and obtains having supersensitive Fe-Y-B metallic film.
5. the preparation method of a kind of supersensitive Fe-Y-B metallic film according to claim 4, it is characterised in that: described step 1) in the crystal plane direction of silicon one side of silicon single-sided polishing sheet be (100).
6. the preparation method of a kind of supersensitive Fe-Y-B metallic film according to claim 4, it is characterised in that: described step 4) the silicon single-sided polishing sheet that obtains is processed as the length and width respectively strip sample of 12 millimeters and 2 millimeters.
7. the preparation method of a kind of supersensitive Fe-Y-B metallic film according to claim 6, it is characterised in that: described step 4) in silicon single-sided polishing sheet through laser scribing machine.
8. the preparation method of a kind of supersensitive Fe-Y-B metallic film according to claim 4, it is characterized in that: described step 4) halfwidth of the magnetoimpedance curve of Fe-Y-B metallic film that obtains is 12.61��13.40A/m, magnetoimpedance sensitivity is 0.40%��0.53% (A/m)-1��
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