CN103746057A - Linear polarization light outgoing LED (light emitting diode) - Google Patents
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- 230000010287 polarization Effects 0.000 title claims abstract description 52
- 230000007704 transition Effects 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 22
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 239000010410 layer Substances 0.000 abstract description 36
- 230000003287 optical effect Effects 0.000 abstract description 8
- 241001025261 Neoraja caerulea Species 0.000 abstract description 2
- 239000002355 dual-layer Substances 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 26
- 238000000034 method Methods 0.000 description 17
- 230000008033 biological extinction Effects 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 238000005457 optimization Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000004049 embossing Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 125000006239 protecting group Chemical group 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
The invention discloses a linear polarization light outgoing LED (light emitting diode). An LED chip of the linear polarization light outgoing LED comprises a substrate (1), an n-type layer (2), a quantum well (3) and a p-type layer (4); a medium transition layer (5) is arranged at the upper surface of the p-type layer (4); the medium transition layer (5) is provided with a nano dual-layer metal grating (6); the thickness of the medium transition layer (5) is 50-300nm. Aiming at the lighting of the GaN-based LED in a blue ray area and a green ray area, excellent optical polarization characteristics and better transmittance can be realized by adjusting and optimizing related structural parameters.
Description
Technical field
The present invention relates to a kind of light-emitting diode (LED), a kind of linear polarization light-emitting diode of special design.
Background technology
Light-emitting diode (LED) is a kind of when be electrically biased the luminous semi-conductor light source device of the mode of being excited in direction.According to the difference of material, LED can send near ultraviolet, visible ray and near infrared light.
Third generation semiconductor take gallium nitride as representative, can make efficient light-emitting diode, and the band gap of gallium nitride and alloy thereof has covered the spectral region from redness to ultraviolet.It has character and the strong Radiation hardness such as wide direct band gap, strong atomic bond, high thermal conductivity, chemical stability be good, in photoelectron, high temperature high power device and high-frequency microwave device application aspect, has wide prospect.Two main flow directions of current gallium nitride based LED development, the one, the brightness that improves LED, the 2nd, give the special optical property of LED.From the special optical performance of LED, the characteristic of for example giving LED polarized light, has very important practical significance.
Polarization LED, owing to having huge using value in fields such as liquid crystal display, polarization imaging, optical communication and car headlamps, is paid much attention to.At present, have the method for a variety of raising LED degree of polarizations: one is to allow LED spontaneous emission polarised light, as utilize non-polar plane or the growth of semi-polarity face GaN substrate to obtain polarised light, but this class substrate is difficult for obtaining, expensive; Another kind of way is to adopt certain technology to produce polarised light at the surface of emission, as the polarised light of limit transmitting reflected away by design reflectivity face, at light-emitting face, make photonic crystal or metal nano grating, or obtain polarised light at exit facet painting one deck polystyrene nanospheres.Wherein, making metal nano grating generation polarised light is simple because making, degree of polarization is high is paid attention to.
When nanometer grating structure is less than wavelength, only have 0 grade of light, other level time derivative light are evanescent wave, this type of grating is sub-wave length grating.Double-level-metal grating is owing to having good polarization characteristic, large to process allowance, and a lot of people are studied this.But for visible ray, especially the transmitance of blue green light wave band is low, its application at visible light wave range is not promoted.Based on nanometer embossing, make double-level-metal grating herein, and increase transition zone raising transmitance at gallium nitride surface, by optimal design, obtain being easy to prepare all good linear polarization light extracting LEDs of applicable suitability for industrialized production, polarization transmitance.
Before the present invention makes, Chinese invention patent (CN 201387494Y) " a kind of wire grating wideband polarizer " has adopted and on substrate, has precipitated metal Al nanometer wiregrating, although based on nano impression, but its cycle, too small rate of finished products was low, transmitance at visible ray blue green light wave band is lower, with the relatively large cycle of the present invention, and raised the efficiency very large difference by increasing transition zone.
At [Li Wanyong, Han Yanjun, Luo Yi. the linear polarization blue-ray LED [J] of making based on nanometer embossing. photoelectron. laser, 2013,24 (006): 1042-1047.] in document its making be single-layer metal grating, for etching metal grating, utilize ICP etching can not ensure good metallic aluminium pattern and then polarisation-affecting effect, increase cost simultaneously, the reacting gas that etching metal needs is wanted has pollution, is unfavorable for large-scale production.
Summary of the invention
Goal of the invention of the present invention is to provide the linear polarization light-emitting diode of a kind of easy preparation, good in optical property.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of linear polarization light-emitting diode, its light-emitting diode chip for backlight unit comprises substrate, N-shaped layer, quantum well and p-type layer, at the upper surface of p-type layer, be provided with a medium transition zone, described medium transition zone is provided with the double-deck metal grating of nanometer, and the thickness of the excessive layer of described medium is at 50～300nm.
In technique scheme, the double-deck metal grating of described nanometer comprises dielectric grating and double-level-metal grating.
In technique scheme, the cycle of described dielectric grating is 80～300nm, and duty ratio is 0.3～0.8, is highly 50～200nm.
In technique scheme, described double-level-metal grating is Double-layer aluminum grating.
In technique scheme, the height of described Double-layer aluminum grating is 30～100nm, interlamellar spacing 10～50nm.
In technique scheme, the material of described medium transition zone is SiO
2, MgF or PMMA.
In technique scheme, the material of described dielectric grating is SiO
2, MgF or PMMA.
Principle of the present invention is: in LED chip quantum well emission only do not have directive, in order to realize LED surface high-polarization and compared with the polarized light of high permeability, the present invention adopts to be increased medium transition zone and make the double-deck metal grating structure of nanometer on the light output surface of LED chip.By appropriate design, the polarised light that the double-deck metal grating of nanometer can be realized being parallel to wiregrating has strong reflection, and the polarised light of corresponding vertical direction has strong transmission.By the thickness of optimal design medium transition region thickness, dielectric grating cycle, duty ratio, thickness and Double-layer aluminum grating, to reach optimized polarization extinction ratio and light transmission rate, realize the high-polarization bright dipping of LED.
In technical solution of the present invention, the structural parameters of medium transition region thickness, the double-deck metal grating of nanometer regulate according to the concrete emission wavelength of LED.According to Finite-Difference Time-Domain Method (FDTD Solutions), concrete numerical value is optimized, design principle is as the criterion with the combination that is issued to best polarization extinction ratio and transmitance at the emission wavelength of setting.
Because technique scheme is used, the present invention compared with prior art has following advantages:
1. the present invention is directed to gallium nitride based LED luminous in blue, green Region, through adjusting and optimizing dependency structure parameter, can realize excellent optical polarization characteristic and good transmitance.
2. the present invention is the active optics device of the double-deck metal grating outgoing of the nanometer based on the transition medium layer polarised light on LED surface, adopting nanometer embossing to prepare double-level-metal grating compares and prepares single-layer metal grating and need the technique of multistep complexity simple, cost is low, optical polarization is good, easily realizes industrialization and applies.Technical scheme provided by the invention, has great importance to the novel active optics device with special optical performance of Design and manufacture.
Accompanying drawing explanation
Fig. 1 is the structural representation of linear polarization light-emitting diode;
Fig. 2 is embodiment mono-medium layer while being MgF, the polarization characteristic curve chart of polarized light-emitting diode;
Fig. 3 is that embodiment bis-medium layers are SiO
2time, the polarization characteristic curve chart of polarized light-emitting diode;
Fig. 4 is embodiment tri-medium layers while being PMMA, the polarization characteristic curve chart of polarized light-emitting diode;
Fig. 5 is embodiment tetra-medium layers while being MgF, the polarization characteristic curve chart of polarized light-emitting diode chip;
Fig. 6 is that embodiment five medium layers are SiO
2time, the polarization characteristic curve chart of polarized light-emitting diode chip;
Fig. 7 is embodiment six medium layers while being PMMA, the polarization characteristic curve chart of polarized light-emitting diode chip;
Fig. 8 is the asynchronous preparation method's flow chart of medium transition zone and dielectric grating material;
Fig. 9 is the preparation method flow chart of medium transition zone when identical with dielectric grating material;
Wherein: 1, substrate; 2, N-shaped GaN layer; 3, InGaN/GaN quantum well; 4, p-type GaN layer; 5, medium transition zone; 6, the double-deck metal grating of nanometer.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
Embodiment mono-:
Shown in Figure 1, it is the structural representation of a kind of linear polarization light-emitting diode chip of providing of the present embodiment, and its structure comprises: the substrate 1 of LED is GaN; NXingGaN district 2; InGaN/GaN quantum well 3; PXingGaN district 4; The upper surface in pXing GaN district is established medium transition zone 5; At the upper surface of medium transition zone, be provided with the double-deck metal grating 6 of nanometer.The luminous wave band of this structure is mainly 430nm～540nm.
According to Finite-Difference Time-Domain Method, shape, cycle, duty ratio, thickness and Double-layer aluminum grating thickness to medium transition zone 5 thickness, dielectric grating carries out concrete theoretical optimization and calculates, and to reach best polarization extinction ratio and the combination of transmitance in blue, green wavelength (430nm-540nm), is as the criterion.In the present embodiment, medium transition zone 5 materials are MgF, and thickness is 35nm, and dielectric grating material is PMMA, cycle P=110nm, and dielectric grating PMMA thickness is 80nm, and duty ratio Λ is 0.6, and Double-layer aluminum grating thickness is 50nm.
Shown in accompanying drawing 2, it is the polarization characteristic curve chart of the LED structure that provides of the present embodiment.By figure, can be seen, the diode chip for backlight unit that the present embodiment provides TM polarized light transmission rate within the scope of luminous wave band 430nm～540nm reaches 0.77～0.84, and the Extinction ratio in this wavelength band reaches 36.8～40.1 decibels (dB).
Fig. 8 is the asynchronous preparation method's flow chart of medium transition zone and dielectric grating material.Its preparation process is as follows: be (a) magnetron sputtering one deck medium transition zone (magnesium fluoride or silicon dioxide) on gallium nitride substrates, not only, at the bottom of protecting group and with conductive electrode insulation, importantly improve transmitance; (b) on dielectric layer, carry out spin coating PMMA and dry; (c), (d) upper for adopting nano impression that grating cycle striped is copied to PMMA, carries out the demoulding after ultra-violet curing; (e) adopt reactive ion beam etching (RIBE), pass into oxygen and carry out etching, remove remaining PMMA; (f) adopt magnetron sputtering plating aluminium on dielectric layer.
Embodiment bis-:
Shown in Figure 1, it is the structural representation of a kind of linear polarization light-emitting diode chip of providing of the present embodiment, and its structure comprises: the substrate 1 of LED is GaN; NXingGaN district 2; InGaN/GaN quantum well 3; PXingGaN district 4; The upper surface in pXing GaN district is established medium transition zone 5; At the upper surface of medium transition zone, be provided with the double-deck metal grating 6 of nanometer.The luminous wave band of this structure is mainly 430nm～540nm.
According to Finite-Difference Time-Domain Method, shape, cycle, duty ratio, thickness and Double-layer aluminum grating thickness to medium transition zone 5 thickness, dielectric grating carries out concrete theoretical optimization and calculates, and to reach best polarization extinction ratio and the combination of transmitance in blue, green wavelength (430nm-540nm), is as the criterion.In the present embodiment, medium transition zone 5 materials are SiO
2, thickness is 35nm, dielectric grating material is PMMA, and cycle P=110nm, dielectric grating PMMA thickness is 80nm, and duty ratio Λ is 0.6, and Double-layer aluminum grating thickness is 50nm.
Referring to accompanying drawing 3, it is the polarization characteristic curve chart of the LED structure that provides of the present embodiment.By figure, can be seen, the diode chip for backlight unit that the present embodiment provides TM polarized light transmission rate within the scope of luminous wave band 430nm～540nm reaches 0.766～0.834, and the Extinction ratio in this wavelength band reaches 36.5～39.99 decibels (dB).
Embodiment tri-:
Shown in Figure 1, it is the structural representation of a kind of linear polarization light-emitting diode chip of providing of the present embodiment, and its structure comprises: the substrate 1 of LED is GaN; NXingGaN district 2; InGaN/GaN quantum well 3; PXingGaN district 4; The upper surface in pXing GaN district is established medium transition zone 5; At the upper surface of medium transition zone, be provided with the double-deck metal grating 6 of nanometer.The luminous wave band of this structure is mainly 430nm～540nm.
According to Finite-Difference Time-Domain Method, shape, cycle, duty ratio, thickness and Double-layer aluminum grating thickness to medium transition zone 5 thickness, dielectric grating carries out concrete theoretical optimization and calculates, and to reach best polarization extinction ratio and the combination of transmitance in blue, green wavelength (430nm-540nm), is as the criterion.In the present embodiment, medium transition zone 5 materials are PMMA, and thickness is 180nm, and dielectric grating material is PMMA, cycle P=110nm, and dielectric grating PMMA thickness is 80nm, and duty ratio Λ is 0.6, and Double-layer aluminum grating thickness is 50nm.
Referring to accompanying drawing 4, it is the polarization characteristic curve chart of the LED structure that provides of the present embodiment.By figure, can be seen, the diode chip for backlight unit that the present embodiment provides TM polarized light transmission rate within the scope of luminous wave band 430nm～540nm reaches 0.645～0.784, and the Extinction ratio in this wavelength band reaches 35.4～37.6 decibels (dB).
Fig. 9 is the preparation method flow chart of medium transition zone when identical with dielectric grating material, its preparation process is as follows: (1) spin coating certain thickness PMMA(thickness on gallium nitride substrates is medium transition region thickness and dielectric grating thickness sum), carry out baking-curing; (2) adopt nano impression formwork structure to be copied to PMMA goes up and carry out ultra-violet curing; (3) structure copying is departed from template; (4) in the PMMA structure copying, carry out magnetron sputtering deposition of aluminum film.
Embodiment tetra-:
Shown in Figure 1, it is the structural representation of a kind of linear polarization light-emitting diode chip of providing of the present embodiment, and its structure comprises: the substrate 1 of LED is GaN; NXingGaN district 2; InGaN/GaN quantum well 3; PXingGaN district 4; The upper surface in pXing GaN district is established medium transition zone 5; At the upper surface of medium transition zone, be provided with the double-deck metal grating 6 of nanometer.The luminous wave band of this structure is mainly 500～540nm.
According to Finite-Difference Time-Domain Method, shape, cycle, duty ratio, thickness and Double-layer aluminum grating thickness to medium transition zone 5 thickness, dielectric grating carries out concrete theoretical optimization and calculates, and to reach best polarization extinction ratio and the combination of transmitance in green wavelength (500nm-540nm), is as the criterion.In the present embodiment, medium transition zone 5 materials are MgF, and thickness is 30nm, and dielectric grating material is PMMA, cycle P=200nm, and dielectric grating thickness is 80nm, and duty ratio Λ is 0.5, and Double-layer aluminum grating thickness is 50nm.
Referring to accompanying drawing 5, it is the polarization characteristic curve chart of the LED structure that provides of the present embodiment.By figure, can be seen, the diode chip for backlight unit that the present embodiment provides TM polarized light transmission rate within the scope of luminous wave band 500nm～540nm reaches 0.73～0.75, and the Extinction ratio in this wavelength band reaches 31.6～32.9 decibels (dB).
Embodiment five:
Shown in Figure 1, it is the structural representation of a kind of linear polarization light-emitting diode chip of providing of the present embodiment, and its structure comprises: the substrate 1 of LED is GaN; NXingGaN district 2; InGaN/GaN quantum well 3; PXingGaN district 4; The upper surface in pXing GaN district is established medium transition zone 5; At the upper surface of medium transition zone, be provided with the double-deck metal grating 6 of nanometer.The luminous wave band of this structure is mainly 500～540nm.
According to Finite-Difference Time-Domain Method, shape, cycle, duty ratio, thickness and Double-layer aluminum grating thickness to medium transition zone 5 thickness, dielectric grating carries out concrete theoretical optimization and calculates, and to reach best polarization extinction ratio and the combination of transmitance in green wavelength (500nm-540nm), is as the criterion.In the present embodiment, medium transition zone 5 materials are SiO
2, thickness is 180nm, dielectric grating material is PMMA, and cycle P=200nm, dielectric grating thickness is 80nm, and duty ratio Λ is 0.5, and Double-layer aluminum grating thickness is 50nm.
Referring to accompanying drawing 6, it is the polarization characteristic curve chart of the LED structure that provides of the present embodiment.By figure, can be seen, the diode chip for backlight unit that the present embodiment provides TM polarized light transmission rate within the scope of luminous wave band 500nm～540nm reaches 0.803～0.826, and the Extinction ratio in this wavelength band reaches 30.8～31.1 decibels (dB).
Embodiment six:
Shown in Figure 1, it is the structural representation of a kind of linear polarization light-emitting diode chip of providing of the present embodiment, and its structure comprises: the substrate 1 of LED is GaN; NXingGaN district 2; InGaN/GaN quantum well 3; PXingGaN district 4; The upper surface in pXing GaN district is established medium transition zone 5; At the upper surface of medium transition zone, be provided with the double-deck metal grating 6 of nanometer.The luminous wave band of this structure is mainly 500～540nm.
According to Finite-Difference Time-Domain Method, shape, cycle, duty ratio, thickness and Double-layer aluminum grating thickness to medium transition zone 5 thickness, dielectric grating carries out concrete theoretical optimization and calculates, and to reach best polarization extinction ratio and the combination of transmitance in green wavelength (500nm-540nm), is as the criterion.In the present embodiment, medium transition zone 5 materials are PMMA, and thickness is 180nm, and dielectric grating material is PMMA, cycle P=200nm, and dielectric grating thickness is 80nm, and duty ratio Λ is 0.5, and Double-layer aluminum grating thickness is 50nm.
Referring to accompanying drawing 7, it is the polarization characteristic curve chart of the LED structure that provides of the present embodiment.By figure, can be seen, the diode chip for backlight unit that the present embodiment provides TM polarized light transmission rate within the scope of luminous wave band 500nm～540nm reaches 0.79～0.821, and the Extinction ratio in this wavelength band reaches 35.4～37.6 decibels (dB).
Claims (7)
1. a linear polarization light-emitting diode, its light-emitting diode chip for backlight unit comprises substrate (1), N-shaped layer (2), quantum well (3) and p-type layer (4), it is characterized in that: at the upper surface of p-type layer (4), be provided with medium transition zone (5), the upper surface of described medium transition zone (5) is provided with the double-deck metal grating of nanometer (6), and the thickness of described medium transition zone (5) is at 50～300nm.
2. a kind of linear polarization light-emitting diode according to claim 1, is characterized in that: the double-deck metal grating of described nanometer (6) comprises dielectric grating and double-level-metal grating.
3. a kind of linear polarization light-emitting diode according to claim 2, is characterized in that: the cycle of described dielectric grating is 80～300nm, duty ratio is 0.3～0.8, is highly 50～200nm.
4. a kind of linear polarization light-emitting diode according to claim 2, is characterized in that: described double-level-metal grating is Double-layer aluminum grating.
5. a kind of linear polarization light-emitting diode according to claim 4, is characterized in that: the height of described Double-layer aluminum grating is 30～100nm, interlamellar spacing 10～50nm.
6. a kind of linear polarization light-emitting diode according to claim 1, is characterized in that: the material of described medium transition zone (5) is SiO
2, MgF or PMMA.
7. a kind of linear polarization light-emitting diode according to claim 2, is characterized in that: the material of described dielectric grating is SiO
2, MgF or PMMA.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098910A (en) * | 2016-08-24 | 2016-11-09 | 苏州大学 | Based on fluorescence ceramics and polarized white light LED of double-layer nanometer optical grating construction |
| CN106129204A (en) * | 2016-08-02 | 2016-11-16 | 南京大学 | Surface phasmon strengthens InGaN/GaN polarized light LED and preparation method thereof |
| CN106654028A (en) * | 2016-11-29 | 2017-05-10 | 天津市中环量子科技有限公司 | Active brightness enhancement film and preparation method therefor |
| CN108490609A (en) * | 2018-03-07 | 2018-09-04 | 中航华东光电有限公司 | The display module of augmented reality glasses |
| CN108845385A (en) * | 2016-09-08 | 2018-11-20 | 苏州大学 | Pixel type based on plasma primitive is orientated double-layer nanometer grating linear polarizer more |
| CN109378336A (en) * | 2018-11-23 | 2019-02-22 | 淮阴工学院 | A kind of colour element linear polarization goes out light Organic Light Emitting Diode |
| CN110928035A (en) * | 2019-12-20 | 2020-03-27 | 京东方科技集团股份有限公司 | Display device |
| CN112415648A (en) * | 2019-08-23 | 2021-02-26 | 迪睿合株式会社 | Polarizing plate and optical device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050088739A1 (en) * | 2003-10-23 | 2005-04-28 | Chih-Ho Chiu | Wire grid polarizer with double metal layers |
| CN101572286A (en) * | 2009-05-27 | 2009-11-04 | 苏州大学 | Polarized light-emitting diode |
| CN101853912A (en) * | 2010-04-08 | 2010-10-06 | 苏州大学 | Light-emitting diode for enhancing polarized light emission |
-
2014
- 2014-01-21 CN CN201410026724.3A patent/CN103746057A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050088739A1 (en) * | 2003-10-23 | 2005-04-28 | Chih-Ho Chiu | Wire grid polarizer with double metal layers |
| CN101572286A (en) * | 2009-05-27 | 2009-11-04 | 苏州大学 | Polarized light-emitting diode |
| CN101853912A (en) * | 2010-04-08 | 2010-10-06 | 苏州大学 | Light-emitting diode for enhancing polarized light emission |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129204A (en) * | 2016-08-02 | 2016-11-16 | 南京大学 | Surface phasmon strengthens InGaN/GaN polarized light LED and preparation method thereof |
| CN106098910A (en) * | 2016-08-24 | 2016-11-09 | 苏州大学 | Based on fluorescence ceramics and polarized white light LED of double-layer nanometer optical grating construction |
| CN108845385A (en) * | 2016-09-08 | 2018-11-20 | 苏州大学 | Pixel type based on plasma primitive is orientated double-layer nanometer grating linear polarizer more |
| CN106654028A (en) * | 2016-11-29 | 2017-05-10 | 天津市中环量子科技有限公司 | Active brightness enhancement film and preparation method therefor |
| CN108490609A (en) * | 2018-03-07 | 2018-09-04 | 中航华东光电有限公司 | The display module of augmented reality glasses |
| CN109378336A (en) * | 2018-11-23 | 2019-02-22 | 淮阴工学院 | A kind of colour element linear polarization goes out light Organic Light Emitting Diode |
| CN112415648A (en) * | 2019-08-23 | 2021-02-26 | 迪睿合株式会社 | Polarizing plate and optical device |
| CN112415648B (en) * | 2019-08-23 | 2023-09-29 | 迪睿合株式会社 | Polarizing plate and optical device |
| CN110928035A (en) * | 2019-12-20 | 2020-03-27 | 京东方科技集团股份有限公司 | Display device |
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