CN103746047B - The light emitting diode that a kind of method for manufacturing light-emitting and employing the method prepare - Google Patents
The light emitting diode that a kind of method for manufacturing light-emitting and employing the method prepare Download PDFInfo
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- CN103746047B CN103746047B CN201310681224.9A CN201310681224A CN103746047B CN 103746047 B CN103746047 B CN 103746047B CN 201310681224 A CN201310681224 A CN 201310681224A CN 103746047 B CN103746047 B CN 103746047B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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Abstract
The invention discloses a kind of method for manufacturing light-emitting and the light emitting diode using the method to prepare, belong to field of photoelectric devices.Described method includes: provides a Sapphire Substrate, and grows up N-type layer, luminescent layer and P-type layer on the first surface of Sapphire Substrate successively；N-type layer is deposited with N electrode, P-type layer is deposited with P electrode；The second surface of Sapphire Substrate being ground polishing, is deposited with one layer of Al adhesion layer on the second surface of Sapphire Substrate, the first surface of Sapphire Substrate is contrary with second surface；Al adhesion layer is deposited with one layer of Ag reflecting layer；Al adhesion layer and Ag reflecting layer are made annealing treatment, combines closely so that Al adhesion layer is formed with Sapphire Substrate and Ag reflecting layer respectively.Al adhesion layer has the highest adhesiveness to Sapphire Substrate and Ag reflecting layer, it is ensured that highly reliable adhesiveness between Ag reflecting layer and Sapphire Substrate, and meanwhile, reflectance is effective, and technique is simple, workable.
Description
Technical field
The present invention relates to field of photoelectric devices, the light emitting diode prepared particularly to a kind of method for manufacturing light-emitting and employing the method.
Background technology
In recent years, developed rapidly with the semiconductor illumination technique that light emitting diode (LightEmittingDiode is called for short " LED ") is representative.LED has been widely used in the multiple fields such as display lamp, display screen, backlight and lighting source.
At present, in order to promote the quality of LED further, industry is the most all carrying out primary study to the luminous efficiency promoting LED.The luminous efficiency of LED is mainly determined by two aspect factors: internal quantum efficiency and light extraction efficiency.Wherein to compare internal quantum efficiency low many for light extraction efficiency, and there is ample room for improvement.For positive assembling structure LED, in order to improve light extraction efficiency, the generally Sapphire Substrate back side after thinning plates metallic mirror.The material that in metal, reflectance is the highest is Ag, but Ag is very poor with the adhesiveness of Sapphire Substrate, it is impossible to be directly used as carrying on the back plating illuminator.At present, relatively common method is to add one layer of chromium the thinnest or nickel between Ag and Sapphire Substrate as adhesion layer, and its thickness is generally right at tens Izods.
During realizing the present invention, inventor finds that prior art at least there is problems in that
Owing to chromium and nickel are light absorptive metals, result can cause the reflectance of whole metallic mirror to be greatly reduced, and causes light extraction efficiency the highest, and the luminous efficiency of LED is low.
Summary of the invention
In order to solve in prior art owing to chromium and nickel are light absorptive metals, result can cause the reflectance of whole metallic mirror to be greatly reduced, cause light extraction efficiency the highest, the problem that the luminous efficiency of LED is low, embodiments provides a kind of method for manufacturing light-emitting and the light emitting diode using the method to prepare.Described technical scheme is as follows:
On the one hand, embodiments providing a kind of method for manufacturing light-emitting, described method includes:
One Sapphire Substrate is provided, and on the first surface of described Sapphire Substrate, grows up N-type layer, luminescent layer and P-type layer successively；
Described N-type layer is deposited with N electrode, described P-type layer is deposited with P electrode；
The second surface of described Sapphire Substrate being ground polishing, is deposited with one layer of Al adhesion layer on the second surface of described Sapphire Substrate, the described first surface of described Sapphire Substrate is contrary with described second surface；
Described Al adhesion layer is deposited with one layer of Ag reflecting layer；
Making annealing treatment described Al adhesion layer and described Ag reflecting layer, combine closely so that described Al adhesion layer is formed with described Sapphire Substrate and described Ag reflecting layer respectively, the temperature of described annealing is 100～400 degrees Celsius.
In a kind of implementation of the embodiment of the present invention, the thickness of described Al adhesion layer is 1～100 angstrom.
In the another kind of implementation of the embodiment of the present invention, the thickness in described Ag reflecting layer is 1000～15000 angstroms.
In the another kind of implementation of the embodiment of the present invention, the atmosphere of described annealing includes noble gas.
nullOn the other hand，The embodiment of the present invention additionally provides a kind of light emitting diode，Described light emitting diode includes: Sapphire Substrate、Grow up the N-type layer on the first surface of described Sapphire Substrate successively、Luminescent layer and P-type layer、It is deposited with the N electrode (106) in described N-type layer and evaporation P electrode in described P-type layer，Described light emitting diode also includes: metallic mirror，Described metallic mirror includes Al adhesion layer and Ag reflecting layer，Described Al adhesion layer is folded between the second surface of described Sapphire Substrate and described Ag reflecting layer，And two surfaces of described Al adhesion layer are directly connected to described Sapphire Substrate and described Ag reflecting layer respectively，The described first surface of described Sapphire Substrate is contrary with described second surface，Annealed process time prepared by described Al adhesion layer and described Ag reflecting layer，The temperature of described annealing controls at 100～400 degrees Celsius.
In a kind of implementation of the embodiment of the present invention, the thickness of described Al adhesion layer is 1～100 angstrom.
In the another kind of implementation of the embodiment of the present invention, the thickness in described Ag reflecting layer is 1000～15000 angstroms.
In the another kind of implementation of the embodiment of the present invention, the thickness of described Sapphire Substrate is 50～200 microns.
In the another kind of implementation of the embodiment of the present invention, described N electrode and described P electrode are respectively Au electrode or Al electrode.
The technical scheme that the embodiment of the present invention provides has the benefit that
By evaporating Al adhesion layer and Ag reflecting layer successively on the back side in Sapphire Substrate, i.e. second surface, and Al adhesion layer and Ag reflecting layer are made annealing treatment, combine closely so that Al adhesion layer is formed with Sapphire Substrate and Ag reflecting layer respectively.Adhesiveness aspect, Al adhesion layer and Sapphire Substrate have the highest adhesiveness, saphire substrate material composition is made up of Al atom and oxygen atom, and Al metal belongs to oxidizable material, therefore the oxygen atom bonding that the Al atom in Al adhesion layer is easy to when annealing in Sapphire Substrate is combined, and forms the highly reliable adhesiveness of covalent bond form；There is again the highest adhesiveness in Al adhesion layer and Ag reflecting layer, Al and Ag broadly falls into face-centered cubic crystal structure, and lattice parameter is very close to, and therefore both can ensure the highest adhesiveness by diffusion of dissolving each other when annealing.As can be seen here, the material of Al adhesion layer and its both sides forms the chemical adhesion of chemical bond form, and its adhesiveness is considerably beyond physical adherence, thus ensure that highly reliable adhesiveness between Ag reflecting layer and Sapphire Substrate.Reflective aspect, Al is the high reflecting material being only second to Ag in the middle of metal, after therefore adding the thinnest Al adhesion layer, has little to no effect the reflectance of whole metal reflective mirror.Processing technology aspect, owing to Al and Ag is all metal material, can complete the evaporation in adhesion layer and reflecting layer in same evaporated device simultaneously, and technique is simple, workable.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in describing embodiment below, the required accompanying drawing used is briefly described, apparently, accompanying drawing in describing below is only some embodiments of the present invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the method for manufacturing light-emitting flow chart that the embodiment of the present invention one provides；
Fig. 2 is the structural representation of the light emitting diode that the embodiment of the present invention two provides.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Embodiment one
Embodiments providing a kind of method for manufacturing light-emitting, see Fig. 1, the method includes:
Step 101 a: Sapphire Substrate is provided, and grows up N-type layer, luminescent layer and P-type layer on the first surface of Sapphire Substrate successively.
Step 102: be deposited with N electrode in N-type layer, is deposited with P electrode in P-type layer.
In embodiments of the present invention, N electrode and P electrode are respectively Au electrode or Al electrode.
Specifically, before evaporation N electrode, need the subregion of P-type layer, luminescent layer and N-type layer is performed etching, to expose N-type layer, on the N-type layer exposed, make N electrode.
It addition, during evaporation P electrode, it is also possible on the P-type layer not etched, make ITO (IndiumTinOxides, nano indium tin metal-oxide) conductive layer, then on ITO conductive layer, make P electrode.
Step 103: the second surface of Sapphire Substrate is ground polishing, is deposited with one layer of Al adhesion layer on the second surface of Sapphire Substrate, and the first surface of Sapphire Substrate is contrary with second surface.
In embodiments of the present invention, Sapphire Substrate have passed through lapping liquid attenuated polishing, and its thickness is 50～200 microns, in order to evaporating Al adhesion layer and Ag reflecting layer on substrate.
Wherein, Al adhesion layer refers to the adhesion layer formed with Al material.
Step 104: be deposited with one layer of Ag reflecting layer on Al adhesion layer.
Wherein, Ag reflecting layer refers to the reflecting layer formed with Ag material.
In the present embodiment, the thickness of Al adhesion layer is 1～100 angstrom.Preferably, the thickness of Al adhesion layer is 3-10 angstrom.In embodiments of the present invention, after evaporating Al adhesion layer and Ag reflecting layer, need it is made annealing treatment, Al adhesion layer is formed with Sapphire Substrate and Ag reflecting layer respectively combine closely, and Al adhesion layer thickness is when more than 100 angstroms, Al adhesion layer and Ag reflecting layer can form the alloy of black when annealing, affect the quality of metallic mirror, it is therefore preferable that the thickness of Al adhesion layer is set to less than 100 angstroms.
Preferably, the thickness in Ag reflecting layer is 1000～15000 angstroms.
Step 105: make annealing treatment Al adhesion layer and Ag reflecting layer, combines closely so that Al adhesion layer is formed with Sapphire Substrate and Ag reflecting layer respectively.
When implementing, annealing is to anneal whole light-emitting diode chip for backlight unit, thus realizes Al adhesion layer and the annealing in Ag reflecting layer.
In step 105, annealing temperature is 100～400 degrees Celsius, and annealing atmosphere includes noble gas (such as nitrogen and argon etc.).
Further, one or more in the metals such as Ti, Ni, Cr, Au, Pt, Al can also be optionally deposited with as protective layer on Ag reflecting layer.
The embodiment of the present invention is by the back side of Sapphire Substrate, i.e. evaporating Al adhesion layer and Ag reflecting layer successively on second surface, and Al adhesion layer and Ag reflecting layer are made annealing treatment, combine closely so that Al adhesion layer is formed with Sapphire Substrate and Ag reflecting layer respectively.Adhesiveness aspect, Al adhesion layer and Sapphire Substrate have the highest adhesiveness, saphire substrate material composition is made up of Al atom and oxygen atom, and Al metal belongs to oxidizable material, therefore the oxygen atom bonding that the Al atom in Al adhesion layer is easy to when annealing in Sapphire Substrate is combined, and forms the highly reliable adhesiveness of covalent bond form；There is again the highest adhesiveness in Al adhesion layer and Ag reflecting layer, Al and Ag broadly falls into face-centered cubic crystal structure, and lattice parameter is very close to, and therefore both can ensure the highest adhesiveness by diffusion of dissolving each other when annealing.As can be seen here, the material of Al adhesion layer and its both sides forms the chemical adhesion of chemical bond form, and its adhesiveness is considerably beyond physical adherence, thus ensure that highly reliable adhesiveness between Ag reflecting layer and Sapphire Substrate.Reflective aspect, Al is the high reflecting material being only second to Ag in the middle of metal, after therefore adding the thinnest Al adhesion layer, has little to no effect the reflectance of whole metal reflective mirror.Processing technology aspect, owing to Al and Ag is all metal material, can complete the evaporation in adhesion layer and reflecting layer in same evaporated device simultaneously, and technique is simple, workable.
Embodiment two
nullEmbodiments provide a kind of light emitting diode，This light emitting diode uses the manufacture method described in embodiment one to make，See Fig. 2，This light emitting diode includes: Sapphire Substrate 201、Grow up the N-type layer 202 on the first surface of Sapphire Substrate 201 successively、Luminescent layer 203 and P-type layer 204、Evaporation N electrode 206 in N-type layer 202、It is deposited with the P electrode 207 in P-type layer 204 and metallic mirror 208，Metallic mirror 208 includes Al adhesion layer 208a and Ag reflecting layer 208b，Al adhesion layer 208a is folded between the second surface of Sapphire Substrate 201 and Ag reflecting layer 208b，And two surfaces of Al adhesion layer 208a are directly connected to Sapphire Substrate 201 and Ag reflecting layer 208b respectively，The first surface of Sapphire Substrate 201 is contrary with second surface.
Wherein, Al adhesion layer refers to the adhesion layer formed with Al material.Ag reflecting layer refers to the reflecting layer formed with Ag material.
In the present embodiment, N-type layer 202 be n-GaN layer, P-type layer 204 be p-GaN layer.
In the present embodiment, the thickness of Al adhesion layer 208a is 1～100 angstrom.Preferably, the thickness of Al adhesion layer 208a is 3-10 angstrom.In embodiments of the present invention, after evaporating Al adhesion layer 208a and Ag reflecting layer 208b, need it is made annealing treatment, Al adhesion layer is formed with Sapphire Substrate and Ag reflecting layer respectively combine closely, and Al adhesion layer thickness is when more than 100 angstroms, Al adhesion layer 208a and Ag reflecting layer 208b can form the alloy of black when annealing, affects the quality of metallic mirror, it is therefore preferable that the thickness of Al adhesion layer 208a is set to less than 100 angstroms.
Further, annealed process time prepared by above-mentioned Al adhesion layer 208a and Ag reflecting layer 208b, the temperature of annealing controls at 100～400 degrees Celsius, and the atmosphere of annealing includes noble gas (such as nitrogen and argon etc.).
Preferably, the thickness of Ag reflecting layer 208b is 1000～15000 angstroms.
Further, one or more in the metals such as Ti, Ni, Cr, Au, Pt, Al can also be deposited with as protective layer on the 208b of Ag reflecting layer.
In embodiments of the present invention, the thickness of Sapphire Substrate 201 is 50～200 microns.The second surface of Sapphire Substrate, before back of the body plating reflecting mirror 208, have passed through lapping liquid attenuated polishing, and final thickness is 50～200 microns, in order to evaporating Al adhesion layer and Ag reflecting layer on substrate.
In embodiments of the present invention, N electrode 206 and P electrode 207 are respectively Au electrode or Al electrode.
Further, this light emitting diode also includes the ITO conductive layer 205 being located between P-type layer 204 and P electrode 207.
The embodiment of the present invention is by setting gradually Al adhesion layer and Ag reflecting layer on the back side of Sapphire Substrate, i.e. second surface, and two surfaces of Al adhesion layer are directly connected to Sapphire Substrate and Ag reflecting layer respectively.Adhesiveness aspect, Al adhesion layer and Sapphire Substrate have the highest adhesiveness, saphire substrate material composition is made up of Al atom and oxygen atom, and Al metal belongs to oxidizable material, therefore the oxygen atom bonding that the Al atom in Al adhesion layer is easy to when annealing in Sapphire Substrate is combined, and forms the highly reliable adhesiveness of covalent bond form；There is again the highest adhesiveness in Al adhesion layer and Ag reflecting layer, Al and Ag broadly falls into face-centered cubic crystal structure, and lattice parameter is very close to, and therefore both can ensure the highest adhesiveness by diffusion of dissolving each other when annealing.As can be seen here, the material of Al adhesion layer and its both sides forms the chemical adhesion of chemical bond form, and its adhesiveness is considerably beyond physical adherence, thus ensure that highly reliable adhesiveness between Ag reflecting layer and Sapphire Substrate.Reflective aspect, Al is the high reflecting material being only second to Ag in the middle of metal, after therefore adding the thinnest Al adhesion layer, has little to no effect the reflectance of whole metal reflective mirror.Processing technology aspect, owing to Al and Ag is all metal material, can complete the evaporation in adhesion layer and reflecting layer in same evaporated device simultaneously, and technique is simple, workable.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (9)
1. a method for manufacturing light-emitting, it is characterised in that described method includes:
One Sapphire Substrate is provided, and on the first surface of described Sapphire Substrate, grows up N-type layer, luminescent layer and P-type layer successively；
Described N-type layer is deposited with N electrode, described P-type layer is deposited with P electrode；
The second surface of described Sapphire Substrate being ground polishing, is deposited with one layer of Al adhesion layer on the second surface of described Sapphire Substrate, the described first surface of described Sapphire Substrate is contrary with described second surface；
Described Al adhesion layer is deposited with one layer of Ag reflecting layer；
Making annealing treatment described Al adhesion layer and described Ag reflecting layer, combine closely so that described Al adhesion layer is formed with described Sapphire Substrate and described Ag reflecting layer respectively, the temperature of described annealing is 100～400 degrees Celsius.
Method the most according to claim 1, it is characterised in that the thickness of described Al adhesion layer is 1～100 angstrom.
Method the most according to claim 1, it is characterised in that the thickness in described Ag reflecting layer is 1000～15000 angstroms.
Method the most according to claim 1, it is characterised in that the atmosphere of described annealing includes noble gas.
null5. a light emitting diode，Described light emitting diode includes: Sapphire Substrate (201)、Grow up the N-type layer (202) on the first surface of described Sapphire Substrate (201) successively、Luminescent layer (203) and P-type layer (204)、It is deposited with the N electrode (206) in described N-type layer (202) and evaporation P electrode (207) in described P-type layer (204)，It is characterized in that，Described light emitting diode also includes: metallic mirror (208)，Described metallic mirror (208) includes Al adhesion layer (208a) and Ag reflecting layer (208b)，Described Al adhesion layer (208a) is folded between the second surface of described Sapphire Substrate (201) and described Ag reflecting layer (208b)，And two surfaces of described Al adhesion layer (208a) are directly connected to described Sapphire Substrate (201) and described Ag reflecting layer (208b) respectively，The described first surface of described Sapphire Substrate (201) is contrary with described second surface，Annealed process time prepared by described Al adhesion layer (208a) and described Ag reflecting layer (208b)，The temperature of described annealing controls at 100～400 degrees Celsius.
Light emitting diode the most according to claim 5, it is characterised in that the thickness of described Al adhesion layer is 1～100 angstrom.
Light emitting diode the most according to claim 5, it is characterised in that the thickness in described Ag reflecting layer is 1000～15000 angstroms.
Light emitting diode the most according to claim 5, it is characterised in that the thickness of described Sapphire Substrate (201) is 50～200 microns.
Light emitting diode the most according to claim 5, it is characterised in that described N electrode (206) and described P electrode (207) are respectively Au electrode or Al electrode.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101241963A (en) * | 2007-12-12 | 2008-08-13 | 厦门三安电子有限公司 | A film LED chip part based on compound low-resistance buffer structure and its making method |
| CN102185075A (en) * | 2011-04-07 | 2011-09-14 | 大连美明外延片科技有限公司 | Light-emitting diode with bonding reflecting layer and manufacturing method thereof |
| CN102931300A (en) * | 2012-11-20 | 2013-02-13 | 无锡华润华晶微电子有限公司 | Method for manufacturing back metallic reflector array in manufacturing process of GaN-based LED |
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| KR100624416B1 (en) * | 2003-12-23 | 2006-09-18 | 삼성전자주식회사 | flip-chip light emitting diodes and method of manufacturing thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101241963A (en) * | 2007-12-12 | 2008-08-13 | 厦门三安电子有限公司 | A film LED chip part based on compound low-resistance buffer structure and its making method |
| CN102185075A (en) * | 2011-04-07 | 2011-09-14 | 大连美明外延片科技有限公司 | Light-emitting diode with bonding reflecting layer and manufacturing method thereof |
| CN102931300A (en) * | 2012-11-20 | 2013-02-13 | 无锡华润华晶微电子有限公司 | Method for manufacturing back metallic reflector array in manufacturing process of GaN-based LED |
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