CN103733346A

CN103733346A - Organic thin film transistor

Info

Publication number: CN103733346A
Application number: CN201280039616.9A
Authority: CN
Inventors: 冈地崇之; 上田将人
Original assignee: Sumitomo Chemical Co Ltd
Current assignee: Sumitomo Chemical Co Ltd
Priority date: 2011-08-22
Filing date: 2012-08-21
Publication date: 2014-04-16
Also published as: WO2013027716A1; JP6062182B2; TW201316580A; JP2013062497A; KR20140050702A

Abstract

The present invention addresses the problem of providing an organic thin film transistor, which has high field-effect mobility, and has a small off current. The solution to the problem is an organic thin film transistor wherein, in the case where a portion positioned directly above or below a source electrode is formed as a first portion, a portion positioned directly above or below a drain electrode is formed as a second portion, and a portion different from the first portion and the second portion is formed as a third portion, in an organic semiconductor layer, a doping region is present in the third portion or in the first portion and the third portion, or in the second portion and the third portion.

Description

OTFT

Technical field

The present invention relates to a part for organic semiconductor layer to carry out the OTFT of doping and possessed organic electroluminescent device, electronic tag and the liquid crystal display cells of such OTFT.

Background technology

As the semiconductor element that possesses semiconductive thin film, the OTFT that possesses the organic film that comprises organic semiconducting materials is attracted attention.In OTFT is manufactured, the solution that comprises organic semiconducting materials by coating can easily form organic film, therefore has the advantage that can produce at an easy rate large-area device.

The characteristic of OTFT depends on the carrier transport of organic film greatly, and carrier transport is higher, more can bring into play the excellent characteristic as OTFT.For example, for possessing in the situation of field effect type OTFT of the organic semiconductor layer that comprises organic film, the carrier transport of organic film is higher just can flow through more electric current, more can make the scope of adjustable magnitude of current broaden etc., can obtain the characteristic as transistorized excellence.Therefore, the OTFT with high carrier transporting has been discussed widely.

As the OTFT with high carrier transporting, for example, proposed to have comprise with electronics acceptance compound doped the OTFT of organic semiconductor layer of organic semiconducting materials.

For example, in non-patent literature 1, as the organic semiconducting materials of the manufacture for OTFT, recording 2,3,5,6-tetrafluoro-7 of having adulterated, 7,8,8-four cyano 1,4-benzoquinone bismethane (F ₄tCNQ) poly-(9,9 '-dioctyl fluorene-alternately-bis-thiophene) (F8T2).This organic semiconducting materials is by being dissolved in o-dichlorohenzene, makes the solution coat that obtains and dry, forms organic semiconductor layer thus and manufactures OTFT.The organic semiconductor layer that the OTFT of herein manufacturing stacks gradually gate electrode, gate insulating film, source electrode, drain electrode and comprises organic semiconducting materials on base material, this organic semiconductor layer has the structure contacting with this gate insulating film, this source electrode and this drain electrode.

In non-patent literature 2, in order solving through Ionized dopant, to destroy matrix, or charge carrier to be supplemented or the problem of scattering, recording the concept of long-range doping (remote-doping).This concept is: the hole that provides or electronics are moved to the active region being separated by spatiality from the region that is doped agent molecule and occupies.

The OTFT of non-patent literature 2 is characterised in that, by the channeled layer of flow of charge, doped layer are separated to form, improved carrier transport thus in the mode that the catching of charge carrier due to electronics acceptance molecule, scattering do not occur.

But, in above-mentioned OTFT, have the problem that off state current enlarges markedly, on/off reduces than (on/off rate).

Prior art document

Non-patent literature

Non-patent literature 1: materials chemistry magazine (JOURNAL OF MATERIAL CHEMISTRY),, the 17th volume, 1416th～1420 pages in 2007

Non-patent literature 2: Applied Physics wall bulletin (APPLIED PHYSICS LETTERS),, the 97th volume, the 123305th page in 2010

Summary of the invention

The problem that invention will solve

The present invention is in order to solve above-mentioned problem in the past and to implement, and object is to provide that field-effect mobility is high, on/off is than large OTFT.

The present invention also aims to provide the organic electroluminescent device, electronic tag and the liquid crystal display cells that possess such OTFT.

For the means of dealing with problems

That is, the present invention is a kind of OTFT, the organic semiconductor layer that it possesses gate electrode, gate insulating film, source electrode, drain electrode and comprises organic semiconducting materials,

This organic semiconductor layer contacts with this gate insulating film, this source electrode and this drain electrode,

This organic semiconductor layer has: the film thickness direction of this organic semiconductor layer by be positioned at this source electrode directly over part or be positioned at this source electrode under the part 1 that forms of part, by be positioned at this drain electrode directly over part or be positioned at this drain electrode under the part 2 that forms of part, and 3rd part different from part 1 and part 2

This organic semiconductor layer comprises:

The non-doped region only being formed by this organic semiconducting materials and

Comprise this organic semiconducting materials and also contain electronic acceptance compound or the doped region of electron donability compound,

At least a portion of this doped region is contained in the 3rd part,

This doped region not with this source electrode contact,

Part or all of this part 1 and the 3rd portion boundary, part or all of this part 2 and the 3rd portion boundary can not be contained in this doped region simultaneously.

In a certain mode, the part contact that face that face of described doped region and organic semiconductor layer contacts with gate insulating film is opposed.

In a certain mode, described doped region is to make electronic acceptance compound or electron donability compound be dissolved in the solution that solvent forms, the region that utilizes print process to form.

In a certain mode, the contained organic semiconducting materials of described organic semiconductor layer is the macromolecular compound that has two heterocycles and interconnect two positions the construction unit forming.

In a certain mode, the contained electronic acceptance compound of described doped region is 30 hexafluoro 36 hydrogen [5,6] fullerene, ten hexafluoro Phthalocyanine Zinc, three [1, two (trifluoromethyl) ethane-1 of 2-, 2-] two sulphur synthetic fibre molybdenums, four cyano 1,4-benzoquinone bismethane derivative or 1,4-benzoquinone derivative.

In a certain mode, the contained electron donability compound of described doped region is Tetrathiafulvalene Derivatives.

The present invention also provides the organic electroluminescent device, electronic tag or the liquid crystal display cells that possess OTFT of the present invention.

Invention effect

According to the present invention, cause can provide the OTFT that field-effect mobility is high, the drift large, threshold voltage of on/off ratio is little and possess organic electroluminescent device, electronic tag and the liquid crystal display cells of such OTFT, therefore the present invention is extremely useful.

Accompanying drawing explanation

Fig. 1 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 1st execution mode.

Fig. 2 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 2nd execution mode.

Fig. 3 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 3rd execution mode.

Fig. 4 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 4th execution mode.

Fig. 5 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 5th execution mode.

Fig. 6 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 6th execution mode.

Fig. 7 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 7th execution mode.

Fig. 8 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 8th execution mode.

Fig. 9 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 9th execution mode.

Figure 10 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 10th execution mode.

Figure 11 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 11st execution mode.

Figure 12 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 12nd execution mode.

Figure 13 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 13rd execution mode.

Figure 14 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 14th execution mode.

Figure 15 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 15th execution mode.

Figure 16 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 16th execution mode.

Figure 17 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 17th execution mode.

Figure 18 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 18th execution mode.

Figure 19 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 19th execution mode.

Figure 20 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 20th execution mode.

Figure 21 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 21st execution mode.

Figure 22 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 22nd execution mode.

Figure 23 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 23rd execution mode.

Figure 24 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 24th execution mode.

Figure 25 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 25th execution mode.

Figure 26 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 26th execution mode.

Figure 27 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 27th execution mode.

Figure 28 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 28th execution mode.

Figure 29 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 29th execution mode.

Figure 30 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 30th execution mode.

Figure 31 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 31st execution mode.

Figure 32 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 32nd execution mode.

Figure 33 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 33rd execution mode.

Figure 34 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 34th execution mode.

Figure 35 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 35th execution mode.

Figure 36 is the schematic cross-section that shows the structure of the field effect type OTFT that relates to the 36th execution mode.

Embodiment

Below, limit preferred embodiment describes of the present invention with reference to accompanying drawing limit as required.It should be noted that, in accompanying drawing explanation, same key element is put on to identical symbol, the repetitive description thereof will be omitted.

< OTFT >

As the typical example of OTFT of the present invention, can list field effect type OTFT.Field effect type OTFT preferably possesses source electrode and drain electrode, becomes the organic semiconductor layer of the current path between them, control the gate electrode of the magnitude of current by current path and be configured in organic semiconductor layer and gate electrode between insulating barrier, particularly preferably source electrode and drain electrode contact and arrange with organic semiconductor layer, and clip the insulating barrier contacting with organic semiconductor layer and gate electrode is set.

Below, the field effect type OTFT of the typical example as OTFT of the present invention is specifically described with reference to accompanying drawing.

Fig. 1 relates to the schematic cross-section of the field effect type OTFT of the 1st execution mode.This field effect type OTFT also has common structure used the field effect type OTFT of organic semiconducting materials in organic semiconductor layer among.

The field effect type OTFT of Fig. 1 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer that comprises organic semiconducting materials 2 forming to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6.In organic semiconductor layer 2, there is doped region 7, it is between the part 1 directly over source electrode 5 and source electrode 5 and the part 2 directly over drain electrode 6 and drain electrode 6, its not with above-mentioned electrode arbitrarily, above-mentioned part 1 and part 2 contact, also the face not contacting with insulating barrier 3 with organic semiconductor layer 2 (, above or below organic semiconductor layer 2 of insulating barrier 3) contact and with opposed of the face contacting with insulating barrier 3 of organic semiconductor layer 2 (, above organic semiconductor layer 2) part contact, it forms and comprises electronic acceptance compound or electron donability compound at above-mentioned contact area.It should be noted that, as organic semiconducting materials, can list p-type organic semiconducting materials and N-shaped organic semiconducting materials.It should be noted that, for for simplicity, in accompanying drawing explanation, be called above by paper, under below is called, the boundary line of the left and right of figure represented sectional view is called to side.

In being on the scene effect type OTFT, organic semiconductor layer 2 becomes the current path (groove) between source electrode 5 and drain electrode 6.Gate electrode 4 is controlled the magnitude of current that passes through current path (groove) from organic semiconductor layer 2 by applying voltage.While using p-type semi-conducting material in organic semiconductor layer 2, by gate electrode 4 is applied to negative voltage, at organic semiconductor layer 2 and the near interface of insulating barrier 3, bring out and produce hole, electric current occurs to flow.If apply on the contrary positive voltage, organic semiconductor layer 2 exhausting, electric current does not flow.

As the method for carrier transport that improves the organic film in organic semiconductor device, have by electronic acceptance compound or electron donability compound are adulterated in organic semiconducting materials, improve the method for carrier density.But, in OTFT, if organic semiconductor layer is all compound doped with electronic acceptance compound or electron donability, even if make gate voltage change, can not regulate well charge carrier amount, have situation, the threshold voltage that can not work as switch element significantly to change, become can not low voltage drive situation.

In order to address this problem, in the present invention, in the inside of organic semiconductor layer, in specific a part of region, adulterate.The region of adulterating, i.e. doped region, for example, with reference to using the face vertical with respect to its length direction that the OTFT as Fig. 1 is dissectd and sectional view, supplement about the condition of configuration below.

First, in the inside of organic semiconductor layer, using be positioned at source electrode directly over or under part as part 1, be positioned at drain electrode directly over or under part as part 2, the part different from part 1 and part 2, for example be positioned at by the part of part 1 and the folded centre of part 2 as the 3rd part, now, doped region is at least present in the 3rd part.And, doped region must not with source electrode contact.And, doped region can be from the 3rd part to part 1 or part 2 extend and exist.But doped region must not extend and exist by the both direction from the 3rd part to part 1 and part 2.In addition, doped region must not contact with the 3rd portion boundary with the 3rd portion boundary and this part 2 with part 1 simultaneously, must not comprise two borders simultaneously.

Herein, directly over electrode or under refer to, during from the vertical direction of the plane with respect to organic semiconductor layer perspective OTFT, in the inside of organic semiconductor layer, become the part repeating with electrode.In the inside of organic semiconductor layer, with electrode above or the part contacting below be also contained in electrode directly over or under concept in.

In addition, preferably in the inside of organic semiconductor layer, doped region be not present in be positioned at source electrode directly over or under part.More specifically, with reference to the cross section of the organic semiconductor layer of using the face vertical with respect to the length direction of OTFT to dissect, using comprise be positioned at source electrode directly over part or be positioned at this source electrode under part and with the region of the part of the contacts side surfaces of this source electrode as the 4th part, using the part different from the 4th part as the 5th part, now, doped region is arranged at least a portion of the 5th part.By doing like this, the field-effect mobility of OTFT improves, and off state current reduces.

Further, doped region more preferably the inside of organic semiconductor layer be not present in be positioned at drain electrode directly over or under part.More specifically, with reference to the cross section of the organic semiconductor layer of using the face vertical with respect to the length direction of OTFT to dissect, using comprise be positioned at source electrode directly over part or be positioned at this source electrode under part, with the part of the contacts side surfaces of source electrode and be positioned at drain electrode directly over part or be positioned at drain electrode under the region of part as the 6th part, using the part different from the 6th part as the 7th part, now, at least a portion of the 7th part, doped region is set.By doing like this, off state current further reduces sometimes, and the drift of threshold voltage reduces.

As electronic acceptance compound, can enumerate as 30 hexafluoro 36 hydrogen [5, 6] fullerene, ten hexafluoro Phthalocyanine Zinc, three [1, two (trifluoromethyl) ethane-1 of 2-, 2-] two sulphur synthetic fibre molybdenums, four cyano 1,4-benzoquinone bismethane (TCNQ), four cyano 1,4-benzoquinone bismethane derivative, 1,4-benzoquinone, 1,4-benzoquinone derivative, 1, 4-naphthoquinone derivatives, dinaphthalene quinone derivative and fluorene derivative, be preferably four cyano 1,4-benzoquinone bismethane (TCNQ), four cyano 1,4-benzoquinone bismethane derivative, 1,4-benzoquinone, 1,4-benzoquinone derivative, 30 hexafluoro 36 hydrogen [5, 6] fullerene and three [1, two (trifluoromethyl) ethane-1 of 2-, 2-] two sulphur synthetic fibre molybdenums.

As above-mentioned four cyano 1,4-benzoquinone bismethane derivative, can enumerate as 5,6-tetrafluoro-7,7,8,8-four cyano 1,4-benzoquinone bismethane (F ₄tCNQ), trifluoromethyl four cyano 1,4-benzoquinone bismethane (CF ₃tCNQ), 2,5-difluoro four cyano 1,4-benzoquinone bismethane (F ₂tCNQ), a fluorine four cyano 1,4-benzoquinone bismethane (FTCNQ), TCNE (TCNE) and 11,11,12,12-four cyano naphthalene-2,6-quinone bismethane (TNAP).

As above-mentioned 1,4-benzoquinone derivative, can enumerate as: 2,3-bis-chloro-5,6-dicyano p-benzoquinone (DDQ), 2,3-bis-is bromo-5,6-dicyano p-benzoquinone (DBDQ), 2,3-bis-iodo-5,6-dicyano p-benzoquinone (DIDQ) and 2,3-dicyano p-benzoquinone (Q (CN) ₂).

As above-mentioned 1,4-naphthoquinone derivative, can enumerate as 2,3-dicyano-5-nitro-1,4-naphthoquinone (DCNNQ) and 2,3-dicyano-1,4-naphthoquinone (DCNQ).

As above-mentioned dinaphthalene quinone derivative, can enumerate as: 3,3 ', 5,5 '-tetra-tert-4,4 '-dinaphthalene quinone, 3,5-dimethyl-3 ', 5 '-di-t-butyl-4,4 '-dinaphthalene quinone, 4,4 '-dinaphthalene quinone, 3,3 ', 5,5 '-tetramethyl-Isosorbide-5-Nitrae-dinaphthalene quinone, 3,3 ', 5,5 '-tetraethyl-Isosorbide-5-Nitrae-dinaphthalene quinone, 3,3 ', 5,5 '-tetrabutyl-Isosorbide-5-Nitrae-dinaphthalene quinone, 3,3 ', 5,5 '-tetraphenyl-Isosorbide-5-Nitrae-dinaphthalene quinone.

As above-mentioned fluorene derivative, can enumerate dicyano methylene-2 as 9-, 4,5,7-tetranitro fluorenes (DTENF).

In electronic acceptance compound, from the viewpoint that the field-effect mobility of OTFT is improved, preferably 30 hexafluoro 36 hydrogen [5,6] fullerene, ten hexafluoro Phthalocyanine Zinc, three [1, two (trifluoromethyl) ethane-1 of 2-, 2-] two sulphur synthetic fibre molybdenums, four cyano 1,4-benzoquinone bismethane derivative and 1,4-benzoquinone derivative.

As above-mentioned electron donability compound, can enumerate as tetrathiafulvalene (TTF) and Tetrathiafulvalene Derivatives.

As above-mentioned Tetrathiafulvalene Derivatives, can enumerate as two (ethylene sulfenyl) tetrathiafulvalenes (BEDT-TTF), two (methylene disulfide group) tetrathiafulvalenes (BMDT-TTF), two (trimethylene two mercaptan) tetrathiafulvalene (BPDT-TTF) and tetramethyl tetrathiafulvalene (TMTTF).

As the contained electronic acceptance compound of doped region or electron donability compound, because electronics acceptance is higher, more can bring into play effect by micro-mixing, thus preferred four cyano 1,4-benzoquinone bismethane, 5,6-tetrafluoro-7,7,8,8-four cyano 1,4-benzoquinone bismethane, more preferably 5,6-tetrafluoro-7,7,8,8-four cyano 1,4-benzoquinone bismethane.

When above-mentioned electronic acceptance compound or above-mentioned electron donability compound dissolve in organic solvent, can form the part of doped region as organic semiconductor layer by rubbing method.

The thickness of the doped region 7 that comprises electronic acceptance compound or above-mentioned electron donability compound is preferably below the half of thickness of organic semiconductor layer 2.

The length of the doped region 7 that comprises electronic acceptance compound or above-mentioned electron donability compound is preferably below the length between source electrode 5 and drain electrode 6, more preferably below the half of the length between source electrode 5 and drain electrode 6.

To describing for the organic semiconducting materials of organic semiconductor layer 2, doped region 7.

Organic semiconductor layer organic semiconducting materials used has carrier transport.Herein, carrier transport refers to, the characteristic that can make the charge carriers such as electronics, hole move in this structure when forming the structures such as film.Carrier transport organic semiconductor compound as a kind of form of organic semiconducting materials is to have to show the structure of such carrier transport or the organic compound of electronic state.

As carrier transport organic semiconductor compound, be preferably carrier transport macromolecular compound and carrier transport low molecular compound.

Then, the carrier transport low molecular compound for organic semiconductor layer, doped region is described.

As suitable carrier transport low molecular compound, can list low molecular compound and the polycyclc aromatic compound with pi-conjugated structure.As the low molecular compound with pi-conjugated structure, can enumerate the compound of the number-average molecular weight less than 8000 of carrier transport macromolecular compound described later had as comprised structure and polystyrene conversion.

As polycyclc aromatic compound, can enumerate as: naphthalene, anthracene, aphthacene, rubrene, pentacene, benzo pentaphene, dibenzo pentaphene, four benzo pentaphenes, naphtho-pentaphene, hexacene, heptacene, and nine benzene (Nanoacene), fluorenes, fluoranthene, phenanthrene,

, terphenyl, benzanthracene, Pi, benzo [c] Pi (Flumilene, Japanese original text: Off Le ミレ Application), benzanthracene, pyrene, anthanthrene (ア Application タ Application スレ Application), peropyrene, coronene, benzo coronene, dibenzo coronene, six benzo coronene, benzo two coronene, perylene (Perylene), terylene (Terrylene), Er perylene, four naphthalene embedding triphens (Quaterrylene), Sanya naphthalene, heptaphene, ovalene, rubicene, violanthrone, isoviolanthrone, circumanthracene (Circumanthracene), dianthracene alkene (Bisanthene), Dibenzo [de, mn] thick four benzene (Zethrene), heptan Dibenzo [de, mn] thick four benzene, pyranthrene (ピラ Application ス), Kai Kule alkene (kekulene), three polyindenes (truxene), fullerene (C60, C70, C60-PCBM, C70-PCBM etc.) and the derivative of these compounds.

Polycyclc aromatic compound can be to contain heteroatomic compound.As containing heteroatomic polycyclc aromatic compound, can enumerate as benzene 1,4-Dithiapentalene, naphthalene 1,4-Dithiapentalene, anthracene 1,4-Dithiapentalene, tetrad (two thiophene) (tetradithiophene), 5-linked (two thiophene) (pentadithiophene), six (two thiophene) (hexadithiophene), dibenzothiophenes, dibenzothiophenes dibenzothiophenes, thienothiophene, two thienothiophenes, four thiophene acenes, five thiophene acenes, dibenzofurans, carbazole, dibenzo thiophene is coughed up, benzo dithiazole, naphtho-dithiazole, anthra dithiazole, tetrad (dithiazole), 5-linked (dithiazole), six (dithiazole), thiazole thiazole, tetrathiafulvalene, dibenzo sulfo-fulvalene, two thiophenic sulfurs are for fulvalene, four cyano 1,4-benzoquinone bismethane, four cyano naphthoquinones bismethane, naphthalenetetracarbimidec imidec, the derivative of perylene tetracarboxylic acid imidodicarbonic diamide and these compounds.The derivative of compound, triphenylamine and these compounds that in addition, phthalocyanine, porphyrin, Tetrabenzoporphyrin etc. contain metal is also contained in and contains heteroatomic polycyclc aromatic compound.

As the derivative of compound, can enumerate as the compound of group and the quinone derivative of compound with halogen atom or 1 valency.The concrete example of the group of halogen atom and 1 valency and R described later ¹and R ²the concrete example of the group of represented halogen atom and 1 valency is identical.For example, as the derivative of aphthacene, can list rubrene.In addition, the quinone derivative of compound is also contained in the derivative of compound.For example, as the derivative of pentacene, can list pentacene diketone.

As carrier transport low molecular compound, because expecting high field-effect mobility, therefore preferred polycyclc aromatic compound, the more preferably represented compound of formula (1).

[changing 1]

In formula (1), R ¹and R ²represent independently respectively the group of halogen atom or 1 valency.S and t are respectively 0～4 integer independently.There are multiple R ¹time, they can be identical also can be different.There are multiple R ²time, they can be identical also can be different.

As R ¹and R ²represented halogen atom, can list fluorine atom, chlorine atom, bromine atoms and iodine atom.

As R ¹and R ²the group of 1 represented valency, can enumerate as saturated hydrocarbyl, unsaturated aliphatic hydrocarbon base, aryl, heteroaryl, alkoxyl, amino, carbonyl, nitro, hydroxyl, cyano group, aralkyl, heteroarylalkyl, aryloxy group, heteroaryloxy, alkyl silicyl.The group of these 1 valencys can be substituted base and replace.As this substituting group, can list R ¹, R ²represented saturated hydrocarbyl, unsaturated aliphatic hydrocarbon base, aryl, heteroaryl, alkoxyl, amino, carbonyl, nitro, hydroxyl, cyano group, aralkyl, heteroarylalkyl, aryloxy group, heteroaryloxy, alkyl silicyl.

Saturated hydrocarbyl can be that straight chain shape can be also chain, and its carbon number is preferably 1～20, more preferably 1～16.As saturated hydrocarbyl, can enumerate as: methyl, ethyl, n-pro-pyl, isopropyl, normal-butyl, isobutyl group, sec-butyl, the tert-butyl group, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, positive decyl, n-undecane base, dodecyl, n-tridecane base, n-tetradecane base, n-pentadecane base, n-hexadecyl, n-heptadecane base, n-octadecane base, NSC 77136 base and n-eicosane base.

Unsaturated aliphatic hydrocarbon base can be that straight chain shape can be also chain, and its carbon number is preferably 1～20, more preferably 1～16.As unsaturated aliphatic hydrocarbon base, can enumerate as vinyl, 1-acrylic, pi-allyl, propargyl, isopropenyl, 1-cyclobutenyl and 2-cyclobutenyl.From the viewpoint of the chemical stability of the represented compound of formula (1), consider, as unsaturated aliphatic hydrocarbon base, be preferably the compound in its chain with 1 two key or triple bond.

Alkoxyl can be that straight chain shape can be also chain, and its carbon number is preferably 1～20, more preferably 1～16.As alkoxyl, can enumerate as methoxyl group, ethyoxyl, propoxyl group and butoxy.

Aryl represents to remove 1 group hydrogen atom from aromatic carbon ring.The carbon number of aryl is preferably 6～60 more preferably 6～20.As aromatic hydrocarbon, can enumerate as benzene, fluorenes, naphthalene and anthracene.

Heteroaryl represents to remove 1 group hydrogen atom from heteroaromatic.The carbon number of heteroaryl is preferably 4～60, and more preferably 4～20.Herein, heteroaromatic refers to, at least 1 carbon atom that carbocyclic ring has is replaced by hetero-atoms such as oxygen atom, sulphur atom, nitrogen-atoms, phosphorus atoms, boron atom, silicon atoms, and has the ring of aromatic series.As heteroaromatic, can enumerate as thiphene ring, selenium phenol ring and furan nucleus.

The carbon number of the aryl moiety of aralkyl is preferably 6～60, and more preferably 6～20.In addition, the carbon number of the moieties of aralkyl is preferably 1～20, and more preferably 1～10.

The carbon number of the aryl moiety of aryloxy group is preferably 6～60, and more preferably 6～20.

The carbon number of the heteroaryl moieties of heteroarylalkyl is preferably 4～60, and more preferably 4～20.In addition, the carbon number of the moieties of heteroarylalkyl is preferably 1～20, and more preferably 1～10.

The carbon number of the heteroaryl moieties of heteroaryloxy is preferably 4～60, and more preferably 4～20.

In formula (1), A, B and C be representative ring respectively, and A and B and A and C mutually contract and encircle respectively.Herein, " mutually ring contracting " refer to, forms the key of a part of a ring also in forming the state of a part of another ring.As A, B and the represented ring of C, can list independently respectively phenyl ring, 6 yuan of heterocycles, 5 yuan of heterocycles, cyclopentadiene ring etc.These rings can have substituting group.

In addition, from the viewpoint of carrier transport, consider, the integer that the n of the repeat number of the ring that expression A shows is 2～8, is preferably 2～6 integer, more preferably 2～4 integer.

, form among the ring of A, B and C the structure after 5 yuan of heterocycles have at least one atom among 5 rings that comprise carbon atom and replaced by hetero-atoms such as oxygen atom, sulphur atom, nitrogen-atoms, phosphorus atoms, boron atom, silicon atoms herein.

As the ring that forms A, be preferably and can there is substituent phenyl ring, can there is substituent thiphene ring, can there is substituent selenium phenol ring and can there is substituent cyclopentadiene ring, more preferably can there is substituent phenyl ring and can there is substituent thiphene ring.Multiple A can distinguish identical also can be different.At least 1 among multiple A is preferably 5 yuan of heterocycles, more preferably can have substituent thiphene ring and can have substituent selenium phenol ring, more preferably can have substituent thiphene ring.If there is at least 1 thiphene ring, can obtain bringing into play the polycyclc aromatic compound of high carrier transporting.The ring that B and C show is preferably independently and can has substituent phenyl ring respectively.

The substituting group that the ring of showing as A～C can have, can list the group of halogen atom and 1 valency.The concrete example of the group of halogen atom and 1 valency and above-mentioned R ¹and R ²the concrete example of the group of represented halogen atom and 1 valency is identical.

Because can obtain high field-effect mobility, pretend and be preferably the represented compound of formula (2), represented represented represented represented compound and the represented compound of formula (7) of compound, formula (6) of compound, formula (5) of compound, formula (4) of formula (3) for the represented compound of formula (1).

[changing 2]

In formula (2)～formula (7), R ¹, R ², s and t represent the meaning same as described above.R ⁵and R ⁶represent independently respectively the group of hydrogen atom, halogen atom or 1 valency.There are multiple R ⁵time, they can be identical also can be different.There are multiple R ⁶time, they can be identical also can be different.R ⁵and R ⁶the concrete example of the group of represented halogen atom and 1 valency and above-mentioned R ¹and R ²the concrete example of the group of represented halogen atom and 1 valency is identical.X represents hetero-atom, represented group or the represented group of formula (d) of formula (c).While having multiple X, they can be identical also can be different.From the viewpoint of the manufacture easy that makes the represented compound in formula (2)～(7), consider, preferably X is all identical.

[changing 3]

In formula (c) and formula (d), R ⁷and R ⁸represent independently respectively the group of hydrogen atom, halogen atom or 1 valency.R ⁷with R ⁸can form ring by bonding.R ⁵and R ⁶the concrete example of the group of represented halogen atom and 1 valency and above-mentioned R ¹and R ²the concrete example of the group of represented halogen atom and 1 valency is identical.R ⁷with R ⁸the ring forming can be that monocycle can be also fused rings, can be both that carbocyclic ring can also be heterocycle, but be preferably the hydrocarbon ring of monocycle and contain oxygen atom or sulphur atom as the heterocycle of heteroatomic monocycle.These rings can have substituting group.As this substituting group, can list the group of halogen atom and 1 valency.The concrete example of the group of halogen atom and 1 valency and above-mentioned R ¹and R ²the concrete example of the group of represented halogen atom and 1 valency is identical.

As the represented compound of formula (2)～formula (7), be preferably the represented compound of formula (8a)～formula (8i).

[changing 4]

In formula (8a)～formula (8i), R ²⁰and R ²¹the phenyl that the saturated hydrocarbyl, triisopropyl silylethynyl, phenyl or the saturated hydrocarbyl by carbon number 1～16 that represent independently respectively hydrogen atom, carbon number 1～16 replaced, is preferably saturated hydrocarbyl and triisopropyl silylethynyl.Among the represented compound of formula (8a)～formula (8i), the represented compound of factor (8c) (is sometimes referred to as " BTBT " below.) can bring into play high carrier transporting, so preferably.From improve BTBT fusing point viewpoint consider, R ²⁰and/or R ²¹the phenyl that is preferably phenyl or has been replaced by the saturated hydrocarbyl of carbon number 1～16.

Then, organic semiconductor layer, doped region carrier transport macromolecular compound used are described.

As carrier transport macromolecular compound, be preferably the macromolecular compound with conjugated unsaturation.This macromolecular compound with conjugated unsaturation can list to have and comprises separately or combine the construction unit that comprises following structure as repetitive, and as macromolecular compound overall homopolymers, copolymer for the state after conjugation extension, described structure is selected from the structure, the structure that contains triple bond, the structure that contains aromatic rings and the tertiary aromatic amine structure that contain two keys.It should be noted that, when carrier transport macromolecular compound is copolymer, it can be that random copolymer can be also block copolymer.

As the structure that contains two keys, can enumerate olefinic structure." olefinic structure " described herein refer to, becomes the structure of olefinic while becoming two bonding positions that key provides to be replaced by hydrogen atom with other construction units.It should be noted that, in below to the explanation of each " structure ", be also suitable for same definition.In addition, as the structure that contains triple bond, can list acetylene series structure.

As aromatic structure, can list the aromatic hydrocarbon structure of monokaryon or multinuclear and the heterocycle structure of monokaryon or multinuclear.As the aromatic hydrocarbon structure of monokaryon or multinuclear, can list phenylene, naphthylene, fluorene structured, acenaphthene structure, luxuriant and rich with fragrance structure, anthracene structure, fluoranthene structure, pyrene Jie Gou, perylene structure, rubrene structure,

structure and the ring initial ring that forms these structures multinuclear contracting cycle compound structure forming that contracts.

As the aromatic hydrocarbon structure of monokaryon or multinuclear, can specifically list the represented structure of formula (9a)～formula (9f).Wherein, particularly preferably there is the represented structure of the represented structure of fluorene structured formula (9a) and formula (9b), there is the represented structure of formula (9e) of pyrene structure.It should be noted that, in formula (9a)～formula (9f), do not put on substituent key and refer to and the bonding position of other construction units Cheng Jian.

[changing 5]

In formula (9a)～(9f), R ¹¹, R ¹²and R ¹⁴represent independently respectively the group of hydrogen atom, halogen atom or 1 valency, R ¹³represent the group of halogen atom or 1 valency.U represents more than 0 integer.There are multiple R ¹¹time, they can be identical also can be different.There are multiple R ¹³time, they can be identical also can be different.R ¹¹, R ¹², R ¹³and R ¹⁴the concrete example of the group of represented halogen atom and 1 valency and above-mentioned R ¹and R ²the concrete example of the group of represented halogen atom and 1 valency is identical.R ¹¹, R ¹², R ¹³and R ¹⁴among two, two R ¹¹or two R ¹³during with the carbon atom bonding of identical carbon atom or adjacency, bonding and form ring.As this ring, can be both that monocycle can be also fused rings, can be both that carbocyclic ring can also be heterocycle, but be preferably the carbocyclic ring of monocycle and contain oxygen atom or sulphur atom as the heterocycle of heteroatomic monocycle.These rings can have substituting group.As this substituting group, can list the group of halogen atom and 1 valency.The concrete example of the group of halogen atom and 1 valency and above-mentioned R ¹and R ²the concrete example of the group of represented halogen atom and 1 valency is identical.

Among the heterocycle structure of monokaryon or multinuclear, as the heterocycle structure of monokaryon, can enumerate as: as furan structure, thiophene-structure, pyrrole structure, the thiophene of 5 yuan of heterocycle structures, cough up Jie Gou, oxazole structure, isoxazole structure, thiazole structure, isothiazole structure, glyoxaline structure, oxadiazole structure, thiadiazoles structure and pyrazoles structure and pyridine structure, pyridazine structure, pyrimidine structure, pyrazine structure, triazine structure and tetrazene structure as 6 yuan of heterocycle structures.

As the heterocycle structure of multinuclear, can list benzoxazole structure, benzothiazole structure, benzimidazole structure, quinoline structure, isoquinolin structure, cinnolines structure, quinazoline structure, phthalazines structure, diazosulfide structure, the benzo contracting ring structures such as phentriazine structure, and azophenlyene structure, phenanthridines structure, acridine structure, carbazole structure, dibenzofurans structure, dibenzothiophenes structure, dibenzo thiophene is coughed up structure, Biphenyl Ether (ジ Off エニレ Application オキシ De) structure, thienothiophene structure, thiazole thiazole structure, two thienothiophene structures, the two thiophene-structures of benzo, the multinuclear contracting ring structures such as benzo double thiazole structure.Multiple monokaryons as described above, the heterocycle structure bonding of multinuclear form, and to condense structure also preferred.

As the heterocycle structure of monokaryon or multinuclear, can enumerate the structure that condenses that the structure represented suc as formula (10a)～formula (10p) and the represented structure bonding of multiple formula (10a)～formula (10p) form.Among the heterocycle structure of monokaryon or multinuclear, from the viewpoint that obtains high mobility, consider, the represented structure of preferred formula (10a), the represented structure bonding of multiple formulas (10a) forms condenses structure, and the represented structure of plural formula (10a) interconnects with two positions the structure forming with the represented structure of another formula (10a) at least respectively, the represented structure of formula (10a) that particularly preferably Z is sulphur atom, Z be the represented structure bonding of multiple formulas (10a) of sulphur atom form condense structure, and plural, Z is that the represented structure of the formula (10a) of sulphur atom interconnects with two positions the structure forming with the represented structure of formula (10a) that at least another Z is sulphur atom respectively.What as the represented multiple bondings of structure of formula (10a), form condenses structure, can enumerate the structure represented suc as formula (10f).As the represented structure of plural formula (10a), with two positions, interconnect the structure forming with the represented structure of another formula (10a) at least respectively, can enumerate the represented structure of the structure represented suc as formula (10c) and formula (10n).It should be noted that, in following formula, while not putting on substituting group, represent the bonding position with other construction units Cheng Jian.

[changing 6]

In formula (10a)～formula (10p), R ¹¹, R ¹², R ¹³, R ¹⁴and u represents the meaning same as described above.In addition, Z represents the hetero-atoms such as oxygen atom, sulphur atom, nitrogen-atoms, phosphorus atoms, boron atom, silicon atom.There are multiple R ¹⁴time, they can be identical also can be different.

As tertiary aromatic amine structure, can enumerate as fluorine-triphenylamine structure, N, N '-diphenylbenzidine structure, N, the structure that two carbon atoms are direct or Jie is formed by hetero-atom bonding of the phenyl moiety in N '-Isosorbide-5-Nitrae-phenylenediamine structure, diphenyl naphthylamines structure and these structures.As two carbon atoms of the phenyl moiety in these structures directly or the structure being formed by hetero-atom bonding that is situated between, can enumerate as N-phenyl phenoxazine structure and N-phenyl phenthazine structure.

Carrier transport macromolecular compound is preferably to be had separately or combines the polymer with the multiple repetitive that contains said structure.When combination has multiple this repetitive, can contain the structure that 1 repetitive forms continuously.

The repetitive that carrier transport macromolecular compound has only consists of heterocycle structure or the tertiary aromatic amine structure of aromatic hydrocarbon structure, monokaryon or the multinuclear of monokaryon or multinuclear, while no matter being alkene formula structure or alkynes formula structure with the structure of this repetitive adjacency, all preferably in this repetitive, be formed with the carbon atom adjacent with the carbon atom at the bonding position of the construction unit of adjacency and be do not replace (with hydrogen atom bonding) or by halogen atom, replaced.The above-mentioned repetitive that particularly carrier transport macromolecular compound has consists of the aromatic hydrocarbon structure of monokaryon or multinuclear, and with the structure of this repetitive adjacency neither alkene formula structure neither alkynes formula structure time, all preferably in this repetitive, be formed with the carbon atom adjacent with the carbon atom at the bonding position of the construction unit of adjacency and be do not replace (with hydrogen atom bonding) or by halogen atom, replaced.

Preferred a kind of mode of carrier transport macromolecular compound is: in the repetitive having at this carrier transport macromolecular compound, with the atom of the repetitive bonding of adjacency be the macromolecular compound as the atom in 5 rings in the structure that comprises 5 rings.That is the repetitive, only being formed by the aromatic hydrocarbon structure of monokaryon or the heterocycle structure of monokaryon is preferably the structure that comprises 5 rings.Preferred other modes of carrier transport macromolecular compound are the macromolecular compounds that have two heterocycles and interconnect with two positions the construction unit forming.Preferably contain two heterocycles and interconnect the construction unit forming as repetitive using two positions.

If the repetitive that carrier transport macromolecular compound has meets at least 1 of above-mentioned condition, there is conjugated unsaturation in macromolecular compound to form well and the carrier transport of carrier transport macromolecular compound further becomes good tendency.

As carrier transport macromolecular compound, particularly preferably there is the combination (formula (11a)～formula (11m)) of the repetitive shown in table 1 or table 2.It should be noted that, table 1 refers to will be in the combination of same a line repetitive arranged side by side, and "-" represented hurdle refers to the repetitive that does not have combination.In addition, the symbol in the general formula in table all with above-mentioned synonym.It should be noted that, in the compound in table, in molecule, have multiple R ¹¹, R ¹², R ¹³and R ¹⁴time, they can distinguish identical also can be different.

[table 1]

[table 2]

As the carrier transport macromolecular compound of combination with (11a) in table 1 and table 2～(11m), be preferably the polymer of recording in table 3 or table 4.M in table 3 and table 4 represents respectively more than 1 integer.As the scope of m, the number-average molecular weight of the polystyrene conversion value of preferred polymers is more than 8,000 scope, more preferably 10,000～1,000,000 scope, more preferably 10,000～500,000 scope.

[table 3]

[table 4]

Among the polymer of recording in above-mentioned table 3 or table 4, at (11e), (11f) and (11g) record in hurdle have two heterocycles with two positions, interconnect the macromolecular compound of the construction unit forming can be especially aptly for organic semiconductor layer and doped region.

The characteristic of the OTFT while using the organic semiconductor layer of OTFT from abundant acquisition, the consideration of the viewpoint of durability, the end structure of carrier transport macromolecular compound is preferably stable structure.When above-mentioned polymer has unsettled end group, preferably with stable end group, replace this unsettled group, or protection end.

As stable end group, for example, except hydrogen atom, fluorine atom, can list the group of 1 valencys such as saturated hydrocarbyl, unsaturated aliphatic hydrocarbon base, aryl, heteroaryl, alkoxyl, amino, carbonyl, nitro, hydroxyl, cyano group, aralkyl, heteroarylalkyl, aryloxy group, heteroaryloxy, alkyl silicyl.The group of these 1 valencys also can have substituting group arbitrarily, as substituting group, can list the group exemplifying as above-mentioned end group.

From improving dissolubility to organic solvent etc. of carrier transport macromolecular compound, the coating etc. that makes organic semiconducting materials more the viewpoint of easy consider, the alkoxyl that end group is preferably the saturated hydrocarbyl that can be replaced by fluorine, the unsaturated aliphatic hydrocarbon base that can be replaced by fluorine, the aryl that can be replaced by fluorine and can be replaced by fluorine.In addition, end group is also preferably the group for example with the conjugated structure continuous with the main chain of conjugated structure that is formed with carrier transport macromolecular compound.As such end group, can enumerate as comprised and main chain the be situated between aryl that formed by carbon-carbon bond bonding or the end group of heteroaryl (aromatic heterocycle).It should be noted that, while there is multiple end group in macromolecular compound, they can distinguish identical also can be different.

As the formation method of the contained organic semiconductor layer of OTFT of the present invention and doped region, except vacuum vapour deposition, can enumerate as rubbing methods such as: spin-coating method, the tape casting, nick version rubbing method, intaglio plate rubbing method, excellent painting method, rolling method, line rod rubbing method, dip coating, spraying rubbing method, silk screen print method, flexographic printing method, hectographic printing method, ink jet printing method, distributor print process, nozzle rubbing method, capillary rubbing method, micro-contact-printings and by the rubbing method of these Combination of Methods.As by the rubbing method after these Combination of Methods, can enumerate as: by intaglio plate/hectographic printing method of intaglio plate rubbing method and the combination of hectographic printing method.If adopt these rubbing methods, not only can obtain having the film of high carrier transporting, and become the large-area device of easy formation.

Among rubbing method, preferably spin-coating method, ink jet printing method, flexographic printing method, silk screen print method, micro-contact-printing, intaglio plate rubbing method, hectographic printing method and intaglio plate/hectographic printing method.

In the making of the solution for above-mentioned rubbing method, can adopt and make the compound that forms organic semiconductor layer, doped region be dissolved or dispersed in method of solvent etc.As this solvent, as long as the solvent that compound used can be dissolved well or disperse is just not particularly limited.For example, can suitably select and apply the unsaturated hydrocarbons solvents such as toluene, dimethylbenzene, mesitylene, tetrahydronaphthalene, decahydronaphthalenes, bis cyclohexane, n-butylbenzene, sec-butylbenzene, tert-butyl benzene; The halo saturated hydrocarbon solvent such as carbon tetrachloride, chloroform, carrene, dichloroethanes, chlorobutane, NBB, chloropentane, bromo pentane silane, chlorohexane, bromohexane, chlorocyclohexane, bromocyclohexane; The halo unsaturated hydrocarbons solvents such as chlorobenzene, dichloro-benzenes, trichloro-benzenes; The ether solvent such as oxolane, oxinane etc.From the viewpoint of carrying out well film formation, consider, preferably the content of the composition except solvent in coating solution is set to 0.1～5 quality % left and right.When the dissolving of compound used is insufficient, can implement to heat as described later.

In the formation of organic film, by such coating fluid is coated on the substrate of regulation, thereby form film.Now, when coating fluid contains solvent, preferably remove afterwards desolventizing with coating simultaneously or in coating.

It should be noted that, such coating can be carried out under the state of heating.Thus, except becoming, can be coated with high concentration coating fluid, can form the film of homogeneous more, also become can choice for use coating difficulty at room temperature material etc.Coating under the state of heating, for example, can be by base plate heating limit being coated with to carry out with coating fluid or the limit of heating in advance.

In OTFT, from the viewpoint of the carrier transport of further raising organic semiconductor layer, doped region, consider, can further implement to the organic semiconductor layer forming like this, doped region the operation of the orientation that give regulation.In the organic semiconductor layer, doped region of orientation, because the molecules align that forms it is in a direction, therefore the tendency of carrier transport in further raising.

As method for alignment, for example, can adopt as the method for alignment of liquid crystal and known method.Wherein, rubbing manipulation, optical alignment method, shearing method (additional shear stress method), lifting rubbing method etc. due to easy, therefore easily utilize particularly preferably rubbing manipulation and shearing method as method for alignment.

Organic semiconductor layer 2 of the present invention can be containing some solvent used, other inevitable composition during fabrication.From there is the viewpoint of good carrier transport and easily form sufficient intensity organic film viewpoint consider, the thickness of organic semiconductor layer 2 is preferably 1nm～100 μ m, more preferably 2nm～1000nm, more preferably 5nm～500nm, is particularly preferably 20nm～200nm.

In insulating barrier 3, can use the dielectric film that comprises inorganic insulator or organic insulator.As inorganic insulator, can list silica, silicon nitride, aluminium oxide, aluminium nitride, titanium oxide.As organic insulator, can list polyethylene, polyester, polyimides, polyphenylene sulfide, polymethyl methacrylate, polyvinyl alcohol, polyvinylphenol, Parylene, polyacrylonitrile.It should be noted that, inorganic insulator and organic insulator can a kind ofly be used separately or two or more and use.The thickness of insulating barrier 3 is preferably 50～1000nm.

In gate electrode 4, can use the materials such as the metals such as gold, platinum, silver, copper, chromium, palladium, aluminium, indium, molybdenum, low resistance polysilicon, low resistance amorphous silicon or tin oxide, indium oxide, indium tin oxide (ITO).These materials can use separately one or and with two or more.In addition, as gate electrode 4, the silicon substrate that can use high-concentration dopant to form.The silicon substrate that high-concentration dopant forms has concurrently as the character of gate electrode with as the character of substrate.Therefore, use high-concentration dopant form silicon substrate time, in the OTFT contacting with gate electrode 4 at substrate 1, can omit the mark of the substrate 1 in following figure.The thickness of gate electrode 4 is preferably 0.02～100 μ m.

Source electrode 5 and drain electrode 6 preferably consist of low-resistance material, for example, particularly preferably gold, platinum, silver, copper, chromium, palladium, aluminium, indium, molybdenum, consist of.These materials can use separately one or and with two or more.The thickness of source electrode 5 and drain electrode 6 is preferably 0.02～1000 μ m separately.

As substrate 1, can list glass substrate, flexible film substrate or plastic base etc.The thickness of substrate 1 is preferably 10～2000 μ m.

With regard to OTFT of the present invention, between source electrode 5 and drain electrode 6 and organic semiconductor layer 2, can clip the layer that comprises the different compound of the organic semiconducting materials contained with organic semiconductor layer 2.By clipping such layer, the contact resistance between source electrode 5 and drain electrode 6 and organic semiconductor layer 2 reduces sometimes, can further improve the carrier mobility of OTFT.

As the layer that comprises the different compound of the organic semiconducting materials contained from above-mentioned organic semiconductor layer 2, can list the layer that comprises following material: the complex compound with low molecular compound, alkali metal, alkaline-earth metal, rare earth metal, these metals and the organic compound of electronics or hole transport ability; The halogens such as iodine, bromine, chlorine, lodine chloride; The oxidation of sulfur compounds such as sulfuric acid, anhydrous slufuric acid, sulfur dioxide, sulfate; The oxynitrides such as nitric acid, nitrogen dioxide, nitrate; The halogenated compound such as perchloric acid, hypochlorous acid; The aromatic mercaptans compounds such as alkyl thiol compound, aromatic mercaptans class, fluoro-alkyl aromatic mercaptans class etc.

Then, to the typical example limit of the field effect type OTFT except the field effect type OTFT that relates to the 1st execution mode with reference to the explanation of accompanying drawing limit.

Execution mode shown in after Fig. 2 is that the configuration change of the each several part of the 1st execution mode is formed, and each inscape is identical with the 1st execution mode.The position of the doped region in the inside of organic semiconductor layer for example, shown in Fig. 2～36, can change according to component structure, coating process.

Fig. 2 relates to the schematic cross-section of the field effect type OTFT of the 2nd execution mode.Field effect type OTFT shown in Fig. 2 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 in directly over source electrode 5 and source electrode 5 and the part 2 directly over drain electrode 6 and drain electrode 6, not with above-mentioned electrode arbitrarily, above-mentioned part 1 and part 2, the part that contacts around the face arbitrarily of organic semiconductor layer 2 forms.

Fig. 3 relates to the schematic cross-section of the field effect type OTFT of the 3rd execution mode.Field effect type OTFT shown in Fig. 3 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 in directly over source electrode 5 and source electrode 5 and the part 2 directly over drain electrode 6 and drain electrode 6, not with the contacting above of above-mentioned electrode arbitrarily, above-mentioned part 1 and part 2, organic semiconductor layer 2, and part formation contact with a part above for insulating barrier 3.

Fig. 4 relates to the schematic cross-section of the field effect type OTFT of the 4th execution mode.Field effect type OTFT shown in Fig. 4 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 in directly over source electrode 5 and source electrode 5 and the part 2 directly over drain electrode 6 and drain electrode 6, not with above-mentioned electrode arbitrarily, above-mentioned part 1 and part 2 contacts and the part formation that contact with a part above for insulating barrier 3 and a part above for organic semiconductor layer 2.

Fig. 5 relates to the schematic cross-section of the field effect type OTFT of the 5th execution mode.Field effect type OTFT shown in Fig. 5 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; Described doped region 7 is in the inside of organic semiconductor layer 2, and between source electrode 5 and drain electrode 6, the part that does not contact with source electrode 5 and contact with a part for a part above for insulating barrier 3 and the side of drain electrode 6 forms.

Fig. 6 relates to the schematic cross-section of the field effect type OTFT of the 6th execution mode.Field effect type OTFT shown in Fig. 6 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and source electrode 5 and the part directly over drain electrode 6 and drain electrode 6, not with source electrode 5, be positioned at source electrode 5 directly over part, insulating barrier 3 above, be positioned at organic semiconductor layer 2 contact above and with the part of the side of drain electrode 6 and be positioned at drain electrode 6 directly over the part formation that contacts of the part of part.

Fig. 7 relates to the schematic cross-section of the field effect type OTFT of the 7th execution mode.Field effect type OTFT shown in Fig. 7 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and source electrode 5 and the part directly over drain electrode 6 and drain electrode 6, not with source electrode 5, be positioned at source electrode 5 directly over part, insulating barrier 3 contact above and with the part of the side of drain electrode 6, be positioned at drain electrode 6 directly over part and the part formation that contacts of the part above of organic semiconductor layer 2.

Fig. 8 relates to the schematic cross-section of the field effect type OTFT of the 8th execution mode.Field effect type OTFT shown in Fig. 8 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and source electrode 5 and the part directly over drain electrode 6 and drain electrode 6, not with source electrode 5, be positioned at source electrode 5 directly over part contact and with the side of the part above of insulating barrier 3, drain electrode 6, be positioned at drain electrode 6 directly over part and the part formation that contact of the part above of organic semiconductor layer 2.

Fig. 9 relates to the schematic cross-section of the field effect type OTFT of the 9th execution mode.Field effect type OTFT shown in Fig. 9 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and the side of the part directly over drain electrode 6, not be positioned at source electrode 5 directly over part, organic semiconductor layer 2 contact above and with drain electrode 6 above and be positioned at drain electrode 6 directly over the part formation that contacts of the part of side of part.

Figure 10 relates to the schematic cross-section of the field effect type OTFT of the 10th execution mode.Field effect type OTFT shown in Figure 10 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and the side of the part directly over drain electrode 6, not be positioned at source electrode 5 directly over part, drain electrode 6 above, organic semiconductor layer 2 contact above and be positioned at drain electrode 6 directly over the part formation that contacts of the part of side of part.

Figure 11 relates to the schematic cross-section of the field effect type OTFT of the 11st execution mode.Field effect type OTFT shown in Figure 11 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; In the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and the side of the part directly over drain electrode 6, not be positioned at source electrode 5 directly over part, drain electrode 6 contact above and be positioned at drain electrode 6 directly over a part for side for part and the doped region 7 of the part formation that a part above for organic semiconductor layer 2 contacts.

Figure 12 relates to the schematic cross-section of the field effect type OTFT of the 12nd execution mode.Field effect type OTFT shown in Figure 12 possesses: substrate 1, the gate electrode 4 forming on substrate 1, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4, the source electrode 5 forming on insulating barrier 3 and drain electrode 6, the organic semiconductor layer 2 and the doped region 7 that to cover the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6, form; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and the side of the part directly over drain electrode 6, not be positioned at source electrode 5 directly over part contact and with above drain electrode 6, be positioned at drain electrode 6 directly over the side of part and the part formation that contact of the part above of organic semiconductor layer 2.

Figure 13 relates to the schematic cross-section of the field effect type OTFT of the 13rd execution mode.Field effect type OTFT shown in Figure 13 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on the organic semiconductor layer 2, source electrode 5 and drain electrode 6 and the doped region 7 forming on organic semiconductor layer 2 in the mode of a surperficial part for the organic semiconductor layer 2 of bottom formation to cover insulating barrier 3 that form; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 under source electrode 5 and the part 2 under drain electrode 6, not with above-mentioned part 1 and part 2, insulating barrier 3 contact above and with the part contacting the above formation of organic semiconductor layer 2.

Figure 14 relates to the schematic cross-section of the field effect type OTFT of the 14th execution mode.Field effect type OTFT shown in Figure 14 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 under source electrode 5 and the part 2 under drain electrode 6, do not form with above-mentioned part 1 and part 2, the part that contacts around the face arbitrarily of organic semiconductor layer 2.

Figure 15 relates to the schematic cross-section of the field effect type OTFT of the 15th execution mode.Field effect type OTFT shown in Figure 15 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 under source electrode 5 and the part 2 under drain electrode 6, not with the part formation that contact above and contact with a part above for insulating barrier 3 of above-mentioned part 1 and part 2, organic semiconductor layer 2.

Figure 16 relates to the schematic cross-section of the field effect type OTFT of the 16th execution mode.Field effect type OTFT shown in Figure 16 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 under source electrode 5 and the part 2 under drain electrode 6, not with above-mentioned part 1 and part 2 contacts and the part formation that contact with a part above for insulating barrier 3 and a part above for organic semiconductor layer 2.

Figure 17 relates to the schematic cross-section of the field effect type OTFT of the 17th execution mode.Field effect type OTFT shown in Figure 17 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part under source electrode 5 and the part under drain electrode 6, not be positioned at source electrode 5 under part, insulating barrier 3 contact above and be positioned at drain electrode 6 under a part for part and the part formation that contacts of a part above for organic semiconductor layer 2.

Figure 18 relates to the schematic cross-section of the field effect type OTFT of the 18th execution mode.Field effect type OTFT shown in Figure 18 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part under source electrode 5 and the part under drain electrode 6, not be positioned at source electrode 5 under part, insulating barrier 3 above, organic semiconductor layer 2 contact above and be positioned at drain electrode 6 under the part formation that contacts of the part of part.

Figure 19 relates to the schematic cross-section of the field effect type OTFT of the 19th execution mode.Field effect type OTFT shown in Figure 19 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part under source electrode 5 and the part under drain electrode 6, not be positioned at source electrode 5 under part, organic semiconductor layer 2 contact above and with the part above of insulating barrier 3 and be positioned at drain electrode 6 under the part formation that contacts of the part of part.

Figure 20 relates to the schematic cross-section of the field effect type OTFT of the 20th execution mode.Field effect type OTFT shown in Figure 20 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part under source electrode 5 and the part under drain electrode 6, not be positioned at source electrode 5 under part contact and with the part above of insulating barrier 3, be positioned at drain electrode 6 under part and the part formation that contact of the part above of organic semiconductor layer 2.

Figure 21 relates to the schematic cross-section of the field effect type OTFT of the 21st execution mode.Field effect type OTFT shown in Figure 21 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part under source electrode 5 and the side of the part under drain electrode 6, not be positioned at source electrode 5 under part, organic semiconductor layer 2 contact above and with the part above of insulating barrier 3 and be positioned at drain electrode 6 under the part formation that contacts of the part of side of part.

Figure 22 relates to the schematic cross-section of the field effect type OTFT of the 22nd execution mode.Field effect type OTFT shown in Figure 22 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part under source electrode 5 and the side of the part under drain electrode 6, not be positioned at source electrode 5 under part, insulating barrier 3 above, organic semiconductor layer 2 contact above and be positioned at drain electrode 6 under the part formation that contacts of the part of side of part.

Figure 23 relates to the schematic cross-section of the field effect type OTFT of the 23rd execution mode.Field effect type OTFT shown in Figure 23 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part under source electrode 5 and the side of the part under drain electrode 6, not be positioned at source electrode 5 under part, insulating barrier 3 contact above and be positioned at drain electrode 6 under the part for side of part and the part formation that a part above for organic semiconductor layer 2 contacts.

Figure 24 relates to the schematic cross-section of the field effect type OTFT of the 24th execution mode.Field effect type OTFT shown in Figure 24 possesses: substrate 1, the gate electrode 4, the insulating barrier 3 forming on substrate 1 in the mode of covering grid electrode 4 that on substrate 1, form, in bottom, be formed with gate electrode 4 insulating barrier 3 on formation organic semiconductor layer 2, to cover bottom, be formed with source electrode 5 and drain electrode 6 and doped region 7 that the mode of a surperficial part for the organic semiconductor layer 2 of insulating barrier 3 forms on organic semiconductor layer 2; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part under source electrode 5 and the side of the part under drain electrode 6, not be positioned at source electrode 5 under part contact and with the part above of insulating barrier 3, be positioned at drain electrode 6 under the side of part and the part formation that contact of a part above for organic semiconductor layer 2.

Figure 25 relates to the schematic cross-section of the field effect type OTFT of the 25th execution mode.Field effect type OTFT shown in Figure 25 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 in directly over source electrode 5 and source electrode 5 and the part 2 directly over drain electrode 6 and drain electrode 6, do not form with the part that contacts and contact with the part below insulating barrier 3 above of above-mentioned electrode arbitrarily, above-mentioned part 1 and part 2, base material 1.

Figure 26 relates to the schematic cross-section of the field effect type OTFT of the 26th execution mode.Field effect type OTFT shown in Figure 26 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 in directly over source electrode 5 and source electrode 5 and the part 2 directly over drain electrode 6 and drain electrode 6, not with above-mentioned electrode arbitrarily, above-mentioned part 1 and part 2, the part that contacts around the face arbitrarily of organic semiconductor layer 2 forms.

Figure 27 relates to the schematic cross-section of the field effect type OTFT of the 27th execution mode.Field effect type OTFT shown in Figure 27 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 in directly over source electrode 5 and source electrode 5 and the part 2 directly over drain electrode 6 and drain electrode 6, do not form with the part contacting below above-mentioned electrode arbitrarily, above-mentioned part 1 and part 2, insulating barrier 3 and contact with a part above for substrate 1.

Figure 28 relates to the schematic cross-section of the field effect type OTFT of the 28th execution mode.Field effect type OTFT shown in Figure 28 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part 1 in directly over source electrode 5 and source electrode 5 and the part 2 directly over drain electrode 6 and drain electrode, not with above-mentioned electrode arbitrarily, above-mentioned part 1 and part 2 contacts and the part formation that contacts with a part and the insulating barrier 3 above of substrate 1 part below.

Figure 29 relates to the schematic cross-section of the field effect type OTFT of the 29th execution mode.Field effect type OTFT shown in Figure 29 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 in the inside of organic semiconductor layer 2, between source electrode 5 and drain electrode 6, the part formation that does not contact with source electrode 5 and contact with a part for a part above for substrate 1 and the side of drain electrode 6.

Figure 30 relates to the schematic cross-section of the field effect type OTFT of the 30th execution mode.Field effect type OTFT shown in Figure 30 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and source electrode 5 and the part directly over drain electrode 6 and drain electrode 6, not with source electrode 5, be positioned at source electrode 5 directly over part, substrate 1 above, below insulating barrier 3, contact and with the part of the side of drain electrode 6 and be positioned at drain electrode 6 directly over the part that contacts of the part of part form.

Figure 31 relates to the schematic cross-section of the field effect type OTFT of the 31st execution mode.Field effect type OTFT shown in Figure 31 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and source electrode 5 and the part directly over drain electrode 6 and drain electrode 6, not with source electrode 5, be positioned at source electrode 5 directly over part, substrate 1 contact above and with the part of the side of drain electrode 6, be positioned at drain electrode 6 directly over part and the part formation that contacts of a part below insulating barrier 3.

Figure 32 relates to the schematic cross-section of the field effect type OTFT of the 32nd execution mode.Field effect type OTFT shown in Figure 32 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and source electrode 5 and the part directly over drain electrode 6 and drain electrode 6, not with source electrode 5, be positioned at source electrode 5 directly over part contact and with the side of the part above of substrate 1, drain electrode 6, be positioned at drain electrode 6 directly over part and the part formation that contacts of part insulating barrier 3 below.

Figure 33 relates to the schematic cross-section of the field effect type OTFT of the 33rd execution mode.Field effect type OTFT shown in Figure 33 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and the side of the part directly over drain electrode 6, not be positioned at source electrode 5 directly over part, drain electrode 6 contact above and be positioned at drain electrode 6 directly over a part and the insulating barrier 3 of side of part below the part formation that contacts of a part.

Figure 34 relates to the schematic cross-section of the field effect type OTFT of the 34th execution mode.Field effect type OTFT shown in Figure 34 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and the side of the part directly over drain electrode 6, not be positioned at source electrode 5 directly over part, drain electrode 6 above, below insulating barrier 3, contact and be positioned at drain electrode 6 directly over the part that contacts of the part of side of part form.

Figure 35 relates to the schematic cross-section of the field effect type OTFT of the 35th execution mode.Field effect type OTFT shown in Figure 35 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and the side of the part directly over drain electrode 6, not be positioned at source electrode 5 directly over part, a part below insulating barrier 3 contact and with drain electrode 6 above and be positioned at drain electrode 6 directly over the part formation that contact of the part of side of part.

Figure 36 relates to the schematic cross-section of the field effect type OTFT of the 36th execution mode.Field effect type OTFT shown in Figure 36 possesses: substrate 1, the source electrode 5 forming on substrate 1 and drain electrode 6, gate electrode 4 and doped region 7 to cover the organic semiconductor layer 2 that the mode of at least a portion of source electrode 5 and at least a portion of drain electrode 6 forms, the insulating barrier 3 forming on organic semiconductor layer 2, to form on insulating barrier 3; Described doped region 7 is in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and the side of the part directly over drain electrode 6, not be positioned at source electrode 5 directly over part contact and with above drain electrode 6, be positioned at drain electrode 6 directly over side and the insulating barrier 3 of part below the part that contacts of a part form.

The manufacture method > of < OTFT

The manufacture method of OTFT of the present invention is the manufacture method that possesses the OTFT of gate electrode, insulating barrier, organic semiconductor layer, source electrode and drain electrode, is to have the manufacture method that forms the OTFT of the operation of doped region in a part for above-mentioned organic semiconductor layer.Below, using the OTFT of the 1st execution mode shown in Fig. 1 as an example, its manufacture method is described.

First, utilize vapour deposition method, sputtering method, plating method, CVD method etc. on substrate 1, to form gate electrode 4.It should be noted that, as gate electrode 4, the n-type silicon substrate that can use high-concentration dopant to form.

Then, utilize CVD method, plasma CVD method, Plasma Polymerization, hot vapour deposition method, thermal oxidation method, anode oxidation method, ionized cluster-beam deposition method, LB method, spin-coating method, the tape casting, nick version rubbing method, intaglio plate rubbing method, excellent painting method, rolling method, line rod rubbing method, dip coating, spraying rubbing method, silk screen print method, flexographic printing method, hectographic printing method, ink jet printing method etc. on gate electrode 4, to form insulating barrier 3.It should be noted that, while using the n-type silicon substrate that forms of high-concentration dopant as gate electrode 4, can its surface be formed by thermal oxidation to the film of silica, can be by the film of this silica as insulating barrier 3.

Then, on insulating barrier 3, form source electrode 5 and drain electrode 6.Although not shown in Fig. 1, after can between source electrode 5 and drain electrode 6 and organic semiconductor layer 2, arrange promote charge injection layer.

Then, while forming non-doped region among organic semiconductor layer 2 on insulating barrier 3, on manufacturing, preferably use organic solvent soluble compound as organic semiconducting materials.OTFT of the present invention can be dissolved in by this compound the solution that organic solvent forms by using, and utilizes spin-coating method, the tape casting, nick version rubbing method, intaglio plate rubbing method, excellent painting method, rolling method, line rod rubbing method, dip coating, spraying rubbing method, silk screen print method, flexographic printing method, hectographic printing method, ink jet printing method, micro-contact-printing, intaglio plate/hectographic printing method etc. to manufacture.

Then, in the inside of organic semiconductor layer 2, between the part in directly over source electrode 5 and source electrode 5 and the part directly over drain electrode 6 and drain electrode 6, do not form doped region 7 with the part that contacts and contact with a part above for organic semiconductor layer 2 of above-mentioned electrode arbitrarily, above-mentioned part, insulating barrier 3 arbitrarily above.In the formation of doped region 7, can use the black liquid that contains organic semiconducting materials and electronic acceptance compound or electron donability compound, utilize the tape casting, nick version rubbing method, intaglio plate rubbing method, excellent painting method, rolling method, line rod rubbing method, dip coating, spraying rubbing method, silk screen print method, flexographic printing method, hectographic printing method, ink jet printing method, micro-contact-printing etc. to manufacture.

Making after OTFT, for protection component, preferably in OTFT, form diaphragm.Utilize this diaphragm, OTFT and atmospheric isolation, can suppress the reduction of the characteristic of OTFT.In addition, utilize diaphragm can reduce form utilize OTFT drive display device time impact.

As forming the method for diaphragm, can list the method that covers with UV cured resin, heat reactive resin or inorganic SiONx film etc. etc.In order effectively to carry out isolated with atmosphere, making after OTFT, preferably for example, not to be exposed to the operation till the mode of atmosphere (, in dry blanket of nitrogen, vacuum medium) forms diaphragm.

The raising method > of the carrier transport of < OTFT

The raising method of carrier transport of the present invention is to be included in of the present inventionly in OTFT, makes the raising method of the carrier transport of the OTFT of the operation of thickness, length and the dopant concentration change of the doped region that comprises electronic acceptance compound or electron donability compound.If employing the method,, not making threshold voltage, the on/off of OTFT more deteriorated than significantly, can improve carrier transport aspect useful.In addition, by making the concentration of electronic acceptance compound or electron donability compound; The thickness of doped region, length variations, can also control carrier transport.

Thickness, the length of the doped region that comprises electronic acceptance compound or electron donability compound can be according to the adjustment of coating condition, for example, can utilize method (the higher thickness thickening that more can make doped region of solution concentration of adjusting according to the concentration of solution.) adjust, the in the situation that of ink-jet method, also can adjust according to spray volume.Also can adjust according to the kind of solvent.

OTFT of the present invention can be aptly for organic electroluminescent device, electronic tag, liquid crystal display cells." electronic tag " refers to, the IC that comprises storage data, the device that sends the antenna of data by wireless receiving.Utilization is called as the device of read write line, can read non-contiguously the information being written in electronic tag, or writing information in electronic tag non-contiguously.

The confirmation method > of < effect

Favourable effect of the present invention be implemented example shown go out experimental result confirm.But, about the execution mode that does not demonstrate experimental result, by adopting the analogy method of having set up to confirm favourable effect of the present invention in the mode of result of calculation.

For example, when the device simulation software ATLAS of use Silicon Valley scientific & technical corporation calculates, by determining the conditions such as the shape of element, the work function of electrode, carrier mobility, doping position and concentration, trap density, dielectric constant, effective density of states and the temperature of semiconductor layer, self-consistent solution Poisson's equation and transmission equation, the electrical characteristics of OTFT can be calculated thus, the physics values such as field-effect mobility, on state current, off state current and the threshold voltage of OTFT can be calculated.

Embodiment

Below, embodiment is shown in order to further describe the present invention, but the invention is not restricted to these embodiment.

embodiment 1

Making has the OTFT of the structure shown in Fig. 1.The surface heat oxidation of the n-type silicon substrate that the high-concentration dopant that becomes gate electrode 4 is formed, forms the silicon oxide layer of thickness 300nm as insulating barrier 3.Then, utilize photo-mask process on silicon oxide layer, to make source electrode 5 and the drain electrode 6 of trench length 100 μ m, groove width 1mm.From silicon oxide layer side, chromium and gold are stacked gradually and forms source electrode and drain electrode.The substrate acetone Ultrasonic Cleaning that has formed source electrode and drain electrode, after 10 minutes, is used to ultraviolet ray-ozone cleaning device irradiation ultraviolet radiation 30 minutes.Afterwards, by this substrate is flooded 2 minutes in the dilution with toluene liquid of phenylethyl trichlorosilane, silane treatment is carried out in the surface of this substrate.

Make to be dissolved in the o-dichlorohenzene as solvent as the represented compound of formula (11g) in the above-mentioned table 3 of organic semiconducting materials, the concentration of making compound is the solution of 0.5 % by weight, filters this solution prepare coating fluid with molecular filter.

Afterwards, a side of utilizing spin-coating method to form source electrode 5 and drain electrode 6 at aforesaid substrate is coated with the coating fluid obtaining, and forms thus the film with the represented compound of the formula (11g) of thickness of about 36nm as organic semiconductor layer 2.

Then, the compound shown in (11g) in table 3 is dissolved in to cyclohexyl benzene, the concentration of preparing compound is the 1st solution of 0.5 % by weight, makes 5,6-tetrafluoro-7,7,8,8-four cyano 1,4-benzoquinone bismethane (F ₄tCNQ) be dissolved in o-dichlorohenzene, preparation F ₄the concentration of TCNQ is the 2nd solution of 0.1 % by weight, makes the mixed solution mixing as the mode of 1: 1 take the weight ratio of the 1st solution and the 2nd solution.

Afterwards, utilize ink jet printing method, on the film of the represented compound of the formula (11g) that forms in region between source electrode 5 and drain electrode 6, be coated with above-mentioned mixed solution, be formed on the F that adulterated in the represented compound of formula (11g) ₄the doped region 7 of TCNQ.

In the organic thin-film transistor device of as above making, by be set as-40V of source/electric leakage voltage across poles Vsd, under the condition that gate voltage Vg is changed in 40～-40V, measure transistor characteristic.Be displayed in Table 5 field-effect mobility (mobility), the when threshold voltage of on/off of the OTFT being calculated by the transport properties that utilizes such mensuration to obtain.

comparative example 1

Except omitting the operation that forms doped region, carry out same operation with embodiment 1, fabricating yard effect type OTFT C1, measures transistor characteristic.Be displayed in Table 5 field-effect mobility (mobility), the when threshold voltage of on/off of the field effect type OTFT C1 that the transport properties that obtained by such mensuration calculates.

comparative example 2

Use makes to make compound and the F shown in formula (11g) ₄the mixture that TCNQ mixes with the weight ratio of 100: 1.3 is dissolved in the solution that solution that o-dichlorohenzene forms replaces the compound represented by formula (11g) and o-dichlorohenzene to form and forms organic semiconductor layer take the concentration of this mixture as the mode of 0.51 % by weight, in addition, carry out the operation same with comparative example 1, make the field effect type OTFT C2 that organic semiconductor layer has all been doped, measure transistor characteristic.Be displayed in Table 5 field-effect mobility (mobility), the when threshold voltage of on/off of the field effect type OTFT C2 being calculated by the transport properties obtaining by such mensuration.

[table 5]

embodiment 2

The OTFT of simulating the structure shown in key diagram 1, Fig. 2, Fig. 3, Fig. 5, Fig. 6, Fig. 9, Figure 10 and Figure 11 by two-dimensional device, maintaining good transistorized on-state off-state when in threshold voltage, can make field-effect mobility improve.In simulation, use the ATLAS of Silicon Valley scientific & technical corporation.This sentences thickness 100nm, organic semi-conductor relative dielectric constant 3, organic semi-conductor electron affinity 2.8eV, organic semi-conductor band gap 2.2eV, the organic semi-conductor hole carrier mobility 0.15cm of temperature 300K, organic semiconductor layer ²the effective density of states 10 of the thickness 300nm of/Vs, trench length 10 μ m, groove width 100 μ m, dielectric film, relative dielectric constant 3.9, valence band and the conduction band of dielectric film ²⁰cm ^-3, electrode work function 5.0eV condition implement simulation.Doped region is p-type doping, and doping density is set to 2 × 10 ²⁰cm ^-3.Be displayed in Table 6 the field-effect mobility (mobility), the when threshold voltage of on/off that by the transistorized transport properties obtaining by simulation, are calculated.

[table 6]

OTFT	Field-effect mobility (cm ²/Vs)	On/off ratio	Threshold voltage (V)
				Fig. 1	0.64	5.5×10 ⁹	1.35
Fig. 2	0.66	9.3×10 ⁹	1.33
				Fig. 3	0.68	8.1×10 ⁹	1.37
Fig. 5	0.21	1.5×10 ¹¹	0.82
				Fig. 6	0.30	4.2×10 ¹⁰	1.13
Fig. 9	0.30	3.9×10 ¹⁰	1.13
				Figure 10	0.30	4.6×10 ¹⁰	1.12
Figure 11	0.30	9.6×10 ¹⁰	1.11

comparative example 3

In the OTFT of the structure shown in Fig. 1, calculate similarly to Example 2 the transistor characteristic that does not contain the OTFT of the structure of doped region 7 in organic semiconductor layer 2.Be displayed in Table 7 the field-effect mobility (mobility), the when threshold voltage of on/off that by the transistorized transport properties obtaining by simulation, are calculated.

[table 7]

OTFT	Field-effect mobility (cm ²/Vs)	On/off ratio	Threshold voltage (V)
				Fig. 1 (non-impurity-doped region)	0.18	2.7×10 ⁹	0.75

embodiment 3

The OTFT of simulating the structure shown in explanation Figure 13, Figure 15, Figure 16, Figure 17, Figure 18, Figure 19, Figure 21, Figure 22 and Figure 23 by two-dimensional device, maintaining good transistorized on-state off-state when in threshold voltage, can make field-effect mobility improve.In simulation, use the ATLAS of Silicon Valley scientific & technical corporation.Be displayed in Table 8 the field-effect mobility (mobility), the when threshold voltage of on/off that by the transistorized transport properties obtaining by simulation, are calculated.

[table 8]

OTFT	Field-effect mobility (cm ²/Vs)	On/off ratio	Threshold voltage (V)
				Figure 13	0.41	1.3×10 ¹⁷	0.07
Figure 15	0.44	2.5×10 ¹⁶	0.10
				Figure 16	1.01	2.4×10 ¹⁰	0.08
Figure 17	0.29	1.9×10 ¹¹	0.21
				Figure 18	0.29	2.2×10 ¹¹	0.22
Figure 19	0.30	4.8×10 ¹¹	0.22
				Figure 21	0.30	1.0×10 ¹²	0.22
Figure 22	0.29	2.2×10 ¹¹	0.22
				Figure 23	0.29	1.5×10 ¹¹	0.22

comparative example 4

In the OTFT of the structure shown in Figure 13, calculate similarly to Example 2 the transistor characteristic that does not contain the OTFT of the structure of doped region 7 in organic semiconductor layer 2.In Fig. 9, show the field-effect mobility (mobility), the when threshold voltage of on/off that by the transistorized transport properties obtaining by simulation, are calculated.

[table 9]

OTFT	Field-effect mobility (cm ²/Vs)	On/off ratio	Threshold voltage (V)
				Figure 13 (non-impurity-doped region)	0.18	3.8×10 ⁹	0.27

embodiment 4

The OTFT of simulating the structure shown in explanation Figure 25, Figure 27, Figure 28, Figure 29, Figure 33, Figure 34 and Figure 35 by two-dimensional device, maintaining good transistorized on-state/off-state when in threshold voltage, can make field-effect mobility improve.In simulation, use the ATLAS of Silicon Valley scientific & technical corporation.Be displayed in Table 10 the field-effect mobility (mobility), the when threshold voltage of on/off that by the transistorized transport properties obtaining by simulation, are calculated.

[table 10]

OTFT

Field-effect mobility (cm ²/Vs)

On/off ratio

Threshold voltage (V)

Figure 25	0.44	2.5×10 ¹⁵	0.10
				Figure 27	0.41	1.4×10 ¹⁵	0.10
Figure 28	1.01	2.4×10 ¹⁰	0.08
				Figure 29	0.56	5.7×10 ¹³	0.17
Figure 33	0.30	1.0×10 ¹²	0.22
				Figure 34	0.29	2.2×10 ¹¹	0.22
Figure 35	0.29	1.5×10 ¹¹	0.22

comparative example 5

In the OTFT of the structure shown in Figure 25, calculate similarly to Example 2 the transistor characteristic that does not contain the OTFT of the structure of doped region 7 in organic semiconductor layer 2.Be displayed in Table 11 the field-effect mobility (mobility), the when threshold voltage of on/off that by the transistorized transport properties obtaining by simulation, are calculated.

[table 11]

OTFT	Field-effect mobility (cm ²/Vs)	On/off ratio	Threshold voltage (V)
				Figure 25 (non-impurity-doped region)	0.18	3.6×10 ⁹	0.27

Symbol description

1 ... substrate,

2 ... organic semiconductor layer,

3 ... insulating barrier,

4 ... gate electrode,

5 ... source electrode,

6 ... drain electrode,

7 ... the doped region that comprises electronic acceptance compound or electron donability compound.

Claims

1. an OTFT, the organic semiconductor layer that it possesses gate electrode, gate insulating film, source electrode, drain electrode and comprises organic semiconducting materials,

This organic semiconductor layer is at the film thickness direction of this organic semiconductor layer, have: by be positioned at this source electrode directly over part or be positioned at this source electrode under the part 1 that forms of part, by be positioned at this drain electrode directly over part or be positioned at this drain electrode under the part 2 that forms of part and 3rd part different from part 1 and part 2

This organic semiconductor layer comprises:

The non-doped region that only formed by this organic semiconducting materials, contain this organic semiconducting materials and also contain electronic acceptance compound or the doped region of electron donability compound,

At least a portion of this doped region is contained in the 3rd part,

This doped region not with this source electrode contact,

Part or all of part or all of this part 1 and the 3rd portion boundary and this part 2 and the 3rd portion boundary can not be contained in this doped region simultaneously.

2. OTFT according to claim 1, wherein, the part contact that face that face of described doped region and organic semiconductor layer contacts with gate insulating film is opposed.

3. OTFT according to claim 1 and 2, wherein, described doped region is to make electronic acceptance compound or electron donability compound be dissolved in the solution that solvent forms, the region that utilizes print process to form.

4. according to the OTFT described in any one in claim 1～3, wherein, the contained organic semiconducting materials of described organic semiconductor layer is the macromolecular compound that has two heterocycles and interconnect two positions the construction unit forming.

5. according to the OTFT described in any one in claim 1～4, wherein, the contained electronic acceptance compound of described doped region is 30 hexafluoro 36 hydrogen [5,6] fullerene, ten hexafluoro Phthalocyanine Zinc, three [1, two (trifluoromethyl) ethane-1 of 2-, 2-] two sulphur synthetic fibre molybdenums, four cyano 1,4-benzoquinone bismethane derivative or 1,4-benzoquinone derivative.

6. according to the OTFT described in any one in claim 1～4, wherein, the contained electron donability compound of described doped region is Tetrathiafulvalene Derivatives.

7. an organic electroluminescent device, it possesses the OTFT described in any one in claim 1～6.

8. an electronic tag, it possesses the OTFT described in any one in claim 1～6.

9. a liquid crystal display cells, it possesses the OTFT described in any one in claim 1～6.