CN103730397B - 图像传感器中的部分埋入式沟道传送装置 - Google Patents
图像传感器中的部分埋入式沟道传送装置 Download PDFInfo
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- CN103730397B CN103730397B CN201310350125.2A CN201310350125A CN103730397B CN 103730397 B CN103730397 B CN 103730397B CN 201310350125 A CN201310350125 A CN 201310350125A CN 103730397 B CN103730397 B CN 103730397B
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- 238000003384 imaging method Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- 229910052785 arsenic Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/649,842 US8809925B2 (en) | 2012-10-11 | 2012-10-11 | Partial buried channel transfer device in image sensors |
US13/649,842 | 2012-10-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103730397A CN103730397A (zh) | 2014-04-16 |
CN103730397B true CN103730397B (zh) | 2016-08-31 |
Family
ID=50454418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310350125.2A Active CN103730397B (zh) | 2012-10-11 | 2013-08-13 | 图像传感器中的部分埋入式沟道传送装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8809925B2 (zh) |
CN (1) | CN103730397B (zh) |
TW (1) | TWI511186B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8742309B2 (en) | 2011-01-28 | 2014-06-03 | Aptina Imaging Corporation | Imagers with depth sensing capabilities |
US10015471B2 (en) | 2011-08-12 | 2018-07-03 | Semiconductor Components Industries, Llc | Asymmetric angular response pixels for single sensor stereo |
US9554115B2 (en) * | 2012-02-27 | 2017-01-24 | Semiconductor Components Industries, Llc | Imaging pixels with depth sensing capabilities |
EP3365916B1 (en) * | 2015-10-21 | 2020-12-09 | Heptagon Micro Optics Pte. Ltd. | Demodulation pixel devices, arrays of pixel devices and optoelectronic devices incorporating the same |
US10002895B2 (en) * | 2016-06-13 | 2018-06-19 | Semiconductor Components Industries, Llc | Apparatus and methods for buried channel transfer gate |
KR102662585B1 (ko) * | 2017-01-09 | 2024-04-30 | 삼성전자주식회사 | 이미지 센서 |
EP3610510B1 (en) * | 2017-04-13 | 2021-07-14 | Artilux Inc. | Germanium-silicon light sensing apparatus |
TWI633787B (zh) * | 2017-07-11 | 2018-08-21 | 恆景科技股份有限公司 | 影像感測器及其操作方法 |
CN108281436A (zh) * | 2018-01-15 | 2018-07-13 | 德淮半导体有限公司 | Cmos图像传感器及其形成方法 |
CN109244094A (zh) * | 2018-09-06 | 2019-01-18 | 德淮半导体有限公司 | 像素单元及其制造方法、图像传感器以及成像装置 |
CN109300925A (zh) * | 2018-09-06 | 2019-02-01 | 德淮半导体有限公司 | 像素单元及其制造方法、图像传感器以及成像装置 |
CN112673275B (zh) * | 2018-09-10 | 2024-03-15 | Pmd技术股份公司 | 光传播时间像素及具有对应的像素的光传播时间传感器 |
US11121169B2 (en) * | 2019-06-25 | 2021-09-14 | Omnivision Technologies, Inc. | Metal vertical transfer gate with high-k dielectric passivation lining |
CN110911433B (zh) * | 2019-12-03 | 2022-08-26 | 豪威科技(上海)有限公司 | 图像传感器及电子设备 |
WO2022126395A1 (zh) * | 2020-12-15 | 2022-06-23 | 深圳市大疆创新科技有限公司 | 图像传感器及其控制方法、图像处理器、成像装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7271430B2 (en) * | 2004-06-04 | 2007-09-18 | Samsung Electronics Co., Ltd. | Image sensors for reducing dark current and methods of fabricating the same |
DE102005026629B4 (de) * | 2004-06-04 | 2014-07-10 | Samsung Electronics Co., Ltd. | Bildsensor und zugehöriges Herstellungsverfahren |
US7288788B2 (en) * | 2004-12-03 | 2007-10-30 | International Business Machines Corporation | Predoped transfer gate for an image sensor |
US7115924B1 (en) * | 2005-06-03 | 2006-10-03 | Avago Technologies Sensor Ip Pte. Ltd. | Pixel with asymmetric transfer gate channel doping |
JP4848739B2 (ja) * | 2005-11-01 | 2011-12-28 | ソニー株式会社 | 物理量検出装置および撮像装置 |
US7675097B2 (en) * | 2006-12-01 | 2010-03-09 | International Business Machines Corporation | Silicide strapping in imager transfer gate device |
US7528427B2 (en) * | 2007-01-30 | 2009-05-05 | International Business Machines Corporation | Pixel sensor cell having asymmetric transfer gate with reduced pinning layer barrier potential |
JP5016941B2 (ja) * | 2007-02-08 | 2012-09-05 | 株式会社東芝 | 固体撮像装置 |
KR100880528B1 (ko) | 2007-06-01 | 2009-01-28 | 매그나칩 반도체 유한회사 | Cmos 이미지 센서 |
KR20090090776A (ko) * | 2008-02-22 | 2009-08-26 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
US20100314667A1 (en) | 2009-06-11 | 2010-12-16 | Omnivision Technologies, Inc. | Cmos pixel with dual-element transfer gate |
US20110032405A1 (en) | 2009-08-07 | 2011-02-10 | Omnivision Technologies, Inc. | Image sensor with transfer gate having multiple channel sub-regions |
US9698185B2 (en) * | 2011-10-13 | 2017-07-04 | Omnivision Technologies, Inc. | Partial buried channel transfer device for image sensors |
CN102544041B (zh) * | 2012-01-17 | 2015-08-19 | 中国科学院半导体研究所 | Cmos图像传感器的像素单元及其制作方法 |
-
2012
- 2012-10-11 US US13/649,842 patent/US8809925B2/en active Active
-
2013
- 2013-07-18 TW TW102125811A patent/TWI511186B/zh active
- 2013-08-13 CN CN201310350125.2A patent/CN103730397B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US8809925B2 (en) | 2014-08-19 |
TW201415542A (zh) | 2014-04-16 |
CN103730397A (zh) | 2014-04-16 |
US20140103410A1 (en) | 2014-04-17 |
TWI511186B (zh) | 2015-12-01 |
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