CN103715182B - 薄膜太阳能电池组件及其制备方法 - Google Patents
薄膜太阳能电池组件及其制备方法 Download PDFInfo
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- CN103715182B CN103715182B CN201310711474.2A CN201310711474A CN103715182B CN 103715182 B CN103715182 B CN 103715182B CN 201310711474 A CN201310711474 A CN 201310711474A CN 103715182 B CN103715182 B CN 103715182B
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- 239000010409 thin film Substances 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000002955 isolation Methods 0.000 claims abstract description 128
- 239000010408 film Substances 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000009413 insulation Methods 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims description 133
- 230000005693 optoelectronics Effects 0.000 claims description 99
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000011787 zinc oxide Substances 0.000 claims description 13
- 229910052681 coesite Inorganic materials 0.000 claims description 10
- 229910052906 cristobalite Inorganic materials 0.000 claims description 10
- 229910052682 stishovite Inorganic materials 0.000 claims description 10
- 229910052905 tridymite Inorganic materials 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005755 formation reaction Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000002120 nanofilm Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 71
- 238000000034 method Methods 0.000 description 18
- 230000005622 photoelectricity Effects 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000005611 electricity Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000013081 microcrystal Substances 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QVLNJJLJVMLHFO-UHFFFAOYSA-N [F].[O-2].[Zn+2] Chemical compound [F].[O-2].[Zn+2] QVLNJJLJVMLHFO-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN201310711474.2A CN103715182B (zh) | 2013-12-20 | 2013-12-20 | 薄膜太阳能电池组件及其制备方法 |
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CN201310711474.2A CN103715182B (zh) | 2013-12-20 | 2013-12-20 | 薄膜太阳能电池组件及其制备方法 |
Publications (2)
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CN103715182A CN103715182A (zh) | 2014-04-09 |
CN103715182B true CN103715182B (zh) | 2016-05-25 |
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CN201310711474.2A Active CN103715182B (zh) | 2013-12-20 | 2013-12-20 | 薄膜太阳能电池组件及其制备方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20160035700A (ko) * | 2014-09-23 | 2016-04-01 | 삼성에스디아이 주식회사 | 고면저항 기판상에 형성된 전극을 포함하는 태양전지 |
JP6759464B2 (ja) | 2018-03-20 | 2020-09-23 | 株式会社東芝 | 多接合型太陽電池モジュール及び太陽光発電システム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101924156A (zh) * | 2009-06-11 | 2010-12-22 | 亚洲太阳科技有限公司 | 复合式串联或并联的薄膜太阳能电池及其制作方法 |
CN103258889A (zh) * | 2012-02-15 | 2013-08-21 | 杜邦太阳能有限公司 | 太阳能电池及其制作方法 |
CN203617292U (zh) * | 2013-12-20 | 2014-05-28 | 北京汉能创昱科技有限公司 | 薄膜太阳能电池组件 |
Family Cites Families (3)
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JP2005277113A (ja) * | 2004-03-25 | 2005-10-06 | Sanyo Electric Co Ltd | 積層型太陽電池モジュール |
JP2010067752A (ja) * | 2008-09-10 | 2010-03-25 | Sanyo Electric Co Ltd | 光起電力装置および光起電力装置の製造方法 |
EP2405485B1 (en) * | 2009-03-02 | 2020-06-10 | Kaneka Corporation | Thin film solar cell module |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101924156A (zh) * | 2009-06-11 | 2010-12-22 | 亚洲太阳科技有限公司 | 复合式串联或并联的薄膜太阳能电池及其制作方法 |
CN103258889A (zh) * | 2012-02-15 | 2013-08-21 | 杜邦太阳能有限公司 | 太阳能电池及其制作方法 |
CN203617292U (zh) * | 2013-12-20 | 2014-05-28 | 北京汉能创昱科技有限公司 | 薄膜太阳能电池组件 |
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Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: BEIJING CHUANGYU TECHNOLOGY Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: BEIJING HANERGY CHUANGYU S&T Co.,Ltd. |
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Address after: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. Address before: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. |
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Address after: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: Beijing Chuangyu Technology Co.,Ltd. |
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Effective date of registration: 20200616 Address after: 518112 Room 403, unit 2, building C, Dongfang Shengshi, Jinpai community, Buji street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen yongshenglong Technology Co.,Ltd. Address before: 102200 room A129-1, Zhongxing Road, Changping District science and Technology Park, Beijing, China, 10 Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210219 Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208 Patentee after: Zishi Energy Co.,Ltd. Address before: Room 403, unit 2, building C, Dongfang Shengshi, Jinpai community, Buji street, Longgang District, Shenzhen, Guangdong 518112 Patentee before: Shenzhen yongshenglong Technology Co.,Ltd. |
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