CN103715171B - Conductive metal interconnection wire and manufacturing method thereof - Google Patents
Conductive metal interconnection wire and manufacturing method thereof Download PDFInfo
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- CN103715171B CN103715171B CN201310722431.4A CN201310722431A CN103715171B CN 103715171 B CN103715171 B CN 103715171B CN 201310722431 A CN201310722431 A CN 201310722431A CN 103715171 B CN103715171 B CN 103715171B
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Abstract
The invention provides a conductive metal interconnection wire. The conductive metal interconnection wire comprises at least one conductive metal film layer and at least one high melting point metal film layer with thickness of a nanometer magnitude which are mutually deposited on a substrate in a reciprocating mode, and sum of thickness of the at least one conductive metal film layer and thickness of the at least one high melting point metal film layer is preset thickness. According to the conductive metal interconnection wire and a manufacturing method thereof, periodic reciprocating deposition of the at least one conductive metal film layer and the at least one high melting point metal film layer with thickness of the nanometer magnitude is carried out, deposition of the high melting point metal film layer at proper thickness can greatly absorb stress of the conductive metal film layers, so stress in the conductive metal film layers can be released, a hill phenomenon is effectively inhibited, excessive growth of a conductive metal crystal grain is further restricted, and thereby surface roughness of a whole film can be reduced, and the conductive metal interconnection wire manufactured through the deposition method has excellent performance and satisfies application requirements of mass production.
Description
Technical field
The present invention relates to metal interconnection wire preparation field, more particularly, to a kind of conductive metal interconnection wire and preparation method thereof.
Background technology
With the development of flat panel display, oled(organic light-emitting diode organic electric-excitation luminescent
Diode) technology is gradually ripe, and large scale oled technology has become as the focus of each panel vendor competition.According to tradition
Al(aluminum) processing procedure make metal interconnection wire cannot meet its request signal transmission.Fine aluminium as metal interconnection wire, because of it
There is relatively low resistivity, can be applicable to large scale quasiconductor display field, but because itself thermal coefficient of expansion is big and substrate
Mismatch, fusing point are low, and it can produce serious hillock(hillock as metal interconnection wire in sputtering manufacturing process) phenomenon,
In actual applications can be because of its grid and drain electrode, the circuit defect draining with its lead, and the mistake that thin film crystal grain easily grows
Divide thick, surface roughness can be further resulted in and increase, image backboard performance.
At present frequently with solution be that a small amount of nd(neodymium is mixed in fine aluminium by alloying), zr(zirconium), ti
(titanium), ta(tantalum), si(silicon), sc(scandium), cu(copper) etc. alloying element, and al film surface deposit floor height melting point metals, come
The generation of suppression hillock phenomenon.For example, as shown in figure 1, first depositing al-nd alloy-layer 101, redeposited mo on the substrate 100
(molybdenum) layer 102.But the aluminium alloy electric conductivity after alloying declines, and also just loses the meaning being suitable for fine aluminium as interconnection line
Justice, and this method is also only applicable to the deposition making less metal interconnection wire of thickness, is not suitable for fine aluminium.
Metal interconnection wire in flat faced display backboard commonly uses aluminum (al) and aluminum alloy materials make, metal interconnection wire
Thickness general control exists(angstrom) below, makeAbove and thicker satisfactory pure aluminum metal interconnection
Also there are a lot of problems in line, also there are many restrictions in terms of large-scale production and application,
Content of the invention
Present invention is primarily targeted at providing a kind of conductive metal interconnection wire and preparation method thereof, to suppress hillock
The generation of phenomenon, also limit too growing up of metal grain simultaneously, and then reduces the surface roughness of whole film layer.
In order to achieve the above object, the invention provides a kind of conductive metal interconnection wire, back and forth it is deposited on lining including interaction
At least one of which conducting metal film layer on bottom and at least one of which thickness are the refractory metal film layer of nanometer scale；
The thickness of the thickness of described at least one of which conducting metal film layer and described at least one of which refractory metal film layer total
With for thickness set in advance.
During enforcement, described conducting metal film layer by aluminum al, copper cu, golden au, silver-colored ag, platinum pt or more conducting metal alloy
Make；
Described refractory metal film layer is made up of molybdenum mo, tantalum ta, chromium cr, titanium ti or molybdenum niobium alloy.
During enforcement, the crystal structure of described conducting metal film layer is different with the crystal structure of described refractory metal film layer；
The crystal of the crystal of described conducting metal film layer and described refractory metal film layer is fcc face-centered cubic crystal, bcc body-centered cubic
Crystal or hcp Patterns for Close-Packed Hexagonal Crystal.
During enforcement, described conducting metal film layer is made up of al, and described refractory metal film layer is made up of molybdenum mo；
The thickness of described conducting metal film layer isThe thickness of described refractory metal film layer is
Present invention also offers a kind of preparation method of conductive metal interconnection wire, comprising:
It is nanometer scale in the reciprocal at least one of which conducting metal film layer and at least one of which thickness of depositing of substrate surface interaction
Refractory metal film layer, until the thickness of described least one layer of conducting metal film layer and described at least one of which high melting point metal film
The thickness sum of layer reaches thickness set in advance.
During enforcement, described conducting metal film layer by aluminum al, copper cu, golden au, silver-colored ag, platinum pt or more conducting metal alloy
Make；
Described refractory metal film layer is made up of molybdenum mo, tantalum ta, chromium cr, titanium ti or molybdenum niobium alloy.
During enforcement, the crystal structure of described conducting metal film layer is different with the crystal structure of described refractory metal film layer；
The crystal of the crystal of described conducting metal film layer and described refractory metal film layer is fcc face-centered cubic crystal, bcc body-centered cubic
Crystal or hcp Patterns for Close-Packed Hexagonal Crystal.
During enforcement, described conducting metal film layer is made up of al, and described refractory metal film layer is made up of molybdenum mo；
The thickness of described conducting metal film layer isThe thickness of described refractory metal film layer is
Compared with prior art, conductive metal interconnection wire of the present invention and preparation method thereof, by periodic reverse
Deposition at least one of which certain thickness conducting metal film layer and at least one of which thickness are the refractory metal film layer of nanometer scale, shape
Become a kind of reciprocal stacked structure, the refractory metal film layer of deposition suitable thickness can effectively absorb answering in conducting metal film layer
Power, makes the stress in conducting metal film layer be released, effectively inhibits the generation of hillock phenomenon, also limit simultaneously and lead
Too the growing up of electric metal crystal grain, and then reduce the surface roughness of whole film layer, prepared by this deposition
Conductive metal interconnection wire is functional, meets large-scale production and application requirement.
Brief description
Fig. 1 is the structural representation making metal interconnection wire using traditional al processing procedure；
Fig. 2 is using the method preparation preparing pure aluminum metal interconnection line in the backboard in flat faced display of the present invention
The structural representation of one embodiment of pure aluminum metal interconnection line；
Fig. 3 is using the method preparation preparing pure aluminum metal interconnection line in the backboard in flat faced display of the present invention
The structural representation of another embodiment of pure aluminum metal interconnection line.
Specific embodiment
The present invention provides a kind of conductive metal interconnection wire and preparation method thereof, is applied in flat faced display backboard, also may be used
To limit too growing up of conducting metal crystal grain, and then the surface roughness of the whole film layer of reduction, improve flat faced display backboard
Upper tft(thin film transistor, TFT) each layer contact performance, prevent the generation of circuit defect.
The preparation method of the conductive metal interconnection wire being provided by the present invention, can make the conductive metal interconnection wire of making functional,
Meet large-scale production and application requirement.
In quasiconductor display field, as the metal interconnection wire of transfer wire, resistance should be as far as possible little.Metal interconnection to be improved
The transmission performance of line, or using the lower material of resistivity, or increase the cross-sectional area of metal interconnection wire, when wire live width
Limited timing, for obtaining good transmission performance, then can only increase the thickness of plain conductor.If being letter using traditional method
Single thickness increasing metal interconnection wire, then can occur more serious hillock defect, can cause grid and source in the application
The circuit defect of pole, drain electrode and its lead, and the very big wire of surface roughness also can make gi(gate as grid
Insulator, gate oxidation) surface roughness of layer becomes big, leads to active with active() contact of layer is deteriorated, final affect
Tft performance.In large scale, high ppi(pixels per inch, number of pixels per square inch) oled, lcd(liquid
Crystal display, liquid crystal display) in backboard manufacturing process, the thickness requirement of pure aluminum metal interconnection line is reachedIf being continuing with traditional method deposition to arise that serious hillock phenomenon occurs and surface roughness is excessive
Problem.
The method of the preparation conductive metal interconnection wire described in the embodiment of the present invention, is applied in flat faced display backboard, bag
Include: back and forth depositing at least one of which conducting metal film layer and at least one of which thickness in substrate surface interaction is the high-melting-point of nanometer scale
Metallic diaphragm, until the thickness of described least one layer of conducting metal film layer and the thickness of described at least one of which refractory metal film layer
Degree sum reaches thickness set in advance.
For example, described conducting metal film layer is by al(aluminum), cu(copper), au(gold), ag(silver), pt(platinum) or more conductive gold
The alloy belonging to is made；
Described refractory metal film layer is by mo(molybdenum), ta(tantalum), cr(chromium), ti(titanium) or molybdenum niobium (monb) alloy make.
In the specific implementation, the crystal structure of the crystal structure of described conducting metal film layer and described refractory metal film layer
Difference, to suppress growing up of al crystal grain, reduces the surface roughness of metal interconnecting wires.The crystal of described conducting metal film layer and institute
The crystal stating refractory metal film layer can be fcc(face-centered cubic) crystal, bcc(body-centered cubic) crystal or hcp(solid matter six
Side) crystal.
For example, in one embodiment, the crystal of conducting metal film layer is fcc crystal, the crystalline substance of refractory metal film layer
Body is bcc crystal.
Preferably, described conducting metal film layer is made up of al, and described refractory metal film layer is made up of mo；
The thickness of described conducting metal film layer isThe thickness of described refractory metal film layer is
The invention provides a kind of conductive metal interconnection wire, back and forth it is deposited at least one of which conduction on substrate including interaction
Metallic diaphragm and at least one of which thickness are the refractory metal film layer of nanometer scale；
The thickness of the thickness of described at least one of which conducting metal film layer and described at least one of which refractory metal film layer total
With for thickness set in advance.
Described conducting metal film layer is by al(aluminum), cu(copper), au(gold), ag(silver), pt(platinum) or more conducting metal
Alloy is made；
Described refractory metal film layer is by mo(molybdenum), ta(tantalum), cr(chromium), ti(titanium) or molybdenum niobium (monb) alloy make.
In the specific implementation, the crystal structure of the crystal structure of described conducting metal film layer and described refractory metal film layer
Difference, to suppress growing up of al crystal grain, reduces the surface roughness of metal interconnecting wires.The crystal of described conducting metal film layer and institute
The crystal stating refractory metal film layer can be fcc(face-centered cubic) crystal, bcc(body-centered cubic) crystal or hcp(solid matter six
Side) crystal.For example, in one embodiment, the crystal of conducting metal film layer is fcc crystal, the crystalline substance of refractory metal film layer
Body is bcc crystal.
Preferably, described conducting metal film layer is made up of al, and described refractory metal film layer is made up of mo；
The thickness of described conducting metal film layer isThe thickness of described refractory metal film layer is
As shown in Fig. 2 in a preferred embodiment, pass through pvd(physical vapor on the substrate 100
Deposition, physical vapour deposition (PVD)), cvd (chemical vapor deposition, chemical vapor deposition) or chemical plating
Mode is sequentially depositing pure al film layer 101, mo film layer 102, pure al film layer 103, mo film layer 104, pure al film layer 105, mo film layer
106th, pure al film layer 107, mo film layer 108, pure al film layer 109, mo film layer 110, pure al film layer 111, mo film layer 112；
The thickness of pure al film layer 101 isThe thickness of mo film layer 102 is
The thickness of pure al film layer 103 isThe thickness of mo film layer 104 is
The thickness of pure al film layer 105 isThe thickness of mo film layer 106 is
The thickness of pure al film layer 107 isThe thickness of mo film layer 108 is
The thickness of pure al film layer 109 isThe thickness of mo film layer 110 is
The thickness of pure al film layer 111 isThe thickness of mo film layer 112 is
The thickness sum of each pure al film layer isMo film layer gross thickness is
Due to the obstruct of mo film layer, each layer al film layer can forming core, growth again, form al even grain size, surface is thick
The low film layer of rugosity.Mo film layer in whole film layer then plays absorption stress, the effect that suppression hillock produces.
When preparing the film layer structure shown in accompanying drawing 2, also suitable thickness ratio and alternately past can be selected according to practical situation
Answer frequency of depositing to prepare the pure aluminum metal interconnection line meeting design requirement function admirable.
In the specific implementation, as shown in Figure 3 it is also possible to first pass through pvd, cvd on the substrate 100 or chemical plating mode deposits
Refractory metal film layer 101, redeposited pure al film layer 102, then be sequentially depositing refractory metal film layer 103, pure al film layer 104,
Refractory metal film layer 105, pure al film layer 106, refractory metal film layer 107, pure al film layer 108, refractory metal film layer
109th, pure al film layer 110 and refractory metal film layer 111.The preparation side of the pure aluminum metal interconnection line described in the embodiment of the present invention
Method, depositing certain thickness al film layer and thickness by periodic reverse is the mo film layer of nanometer scale, forms a kind of reciprocal heap
Stack structure, deposition suitable thickness refractory metal can fully absorb stress in conducting metal film layer, make in al film layer
Stress be released, effectively inhibit the generation of hillock phenomenon, also limit too growing up of al crystal grain simultaneously, and then
Reduce the surface roughness of whole film layer, the al interconnection line prepared by this deposition is functional, meet big rule
Mould production application requires.
The above is the preferred embodiment of the present invention it is noted that for those skilled in the art
For, on the premise of without departing from principle of the present invention, some improvements and modifications can also be made, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of conductive metal interconnection wire is back and forth deposited at least one of which conductive gold on substrate it is characterised in that including interaction
Belonging to film layer and at least one of which thickness is the refractory metal film layer of nanometer scale；
The summation of the thickness of the thickness of described at least one of which conducting metal film layer and described at least one of which refractory metal film layer is
Thickness set in advance；
The thickness of described conducting metal film layer isThe thickness of described refractory metal film layer is
2. conductive metal interconnection wire as claimed in claim 1 it is characterised in that described conducting metal film layer by aluminum al, copper cu,
Golden au, the alloy of silver-colored ag, platinum pt or more conducting metal are made；
Described refractory metal film layer is made up of molybdenum mo, tantalum ta, chromium cr, titanium ti or molybdenum niobium alloy.
3. conductive metal interconnection wire as claimed in claim 1 it is characterised in that the crystal structure of described conducting metal film layer and
The crystal structure of described refractory metal film layer is different；
The crystal of the crystal of described conducting metal film layer and described refractory metal film layer is fcc face-centered cubic crystal, bcc body-centered
Cubic crystal or hcp Patterns for Close-Packed Hexagonal Crystal.
4. the conductive metal interconnection wire as described in claim 1 or 3 is it is characterised in that described conducting metal film layer is made up of al,
Described refractory metal film layer is made up of molybdenum mo.
5. a kind of preparation method of conductive metal interconnection wire is it is characterised in that include:
It is the Gao Rong of nanometer scale in the reciprocal at least one of which conducting metal film layer and at least one of which thickness of depositing of substrate surface interaction
Point metallic diaphragm, until the thickness of described least one layer of conducting metal film layer and described at least one of which refractory metal film layer
Thickness sum reaches thickness set in advance；The thickness of described conducting metal film layer isDescribed high-melting-point gold
Belong to film layer thickness be
6. conductive metal interconnection wire as claimed in claim 5 preparation method it is characterised in that
Described conducting metal film layer is made up of the alloy of aluminum al, copper cu, golden au, silver-colored ag, platinum pt or more conducting metal；
Described refractory metal film layer is made up of molybdenum mo, tantalum ta, chromium cr, titanium ti or molybdenum niobium alloy.
7. conductive metal interconnection wire as claimed in claim 5 preparation method it is characterised in that
The crystal structure of described conducting metal film layer is different with the crystal structure of described refractory metal film layer；
The crystal of the crystal of described conducting metal film layer and described refractory metal film layer is fcc face-centered cubic crystal, bcc body-centered
Cubic crystal or hcp Patterns for Close-Packed Hexagonal Crystal.
8. the preparation method of the conductive metal interconnection wire as described in claim 5 or 7 is it is characterised in that described conductive metal film
Layer is made up of al, and described refractory metal film layer is made up of molybdenum mo.
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| CN103943643B (en) * | 2014-04-25 | 2017-03-15 | 武汉新芯集成电路制造有限公司 | Metal shading film that a kind of multilamellar is piled up and preparation method thereof |
| CN104091821B (en) * | 2014-07-16 | 2017-05-03 | 上海和辉光电有限公司 | flexible display device and folding-resistant metal wire |
| CN104867904B (en) * | 2015-04-03 | 2018-05-04 | 京东方科技集团股份有限公司 | Conductive structure and preparation method thereof, array base palte, display device |
| CN106430078A (en) * | 2016-08-18 | 2017-02-22 | 上海华虹宏力半导体制造有限公司 | Semiconductor structure and forming method for semiconductor structure |
| CN108281428A (en) * | 2017-01-06 | 2018-07-13 | 昆山工研院新型平板显示技术中心有限公司 | A kind of metal wire and flexible display panels |
| CN106684115A (en) * | 2017-01-18 | 2017-05-17 | 昆山工研院新型平板显示技术中心有限公司 | Metal wire and flexible display panel |
| CN108538826A (en) * | 2018-02-06 | 2018-09-14 | 苏州达方电子有限公司 | Bendable light-emitting device and its manufacturing method |
| US20230187343A1 (en) * | 2021-12-09 | 2023-06-15 | International Business Machines Corporation | Top via interconnect structure with texture suppression layers |
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| CN102082115A (en) * | 2009-12-01 | 2011-06-01 | 无锡华润上华半导体有限公司 | Aluminum interconnection structure and method for forming aluminum interconnection structure |
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| CN103123909A (en) * | 2011-11-18 | 2013-05-29 | 无锡华润上华科技有限公司 | Aluminum interconnecting wire and preparation method thereof |
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| KR100688055B1 (en) * | 2004-05-10 | 2007-02-28 | 주식회사 하이닉스반도체 | Method for manufacturing metal-interconnect using barrier metal formed low temperature |
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| CN102082115A (en) * | 2009-12-01 | 2011-06-01 | 无锡华润上华半导体有限公司 | Aluminum interconnection structure and method for forming aluminum interconnection structure |
| CN103000570A (en) * | 2011-09-16 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | Forming method of copper interconnects |
| CN103123909A (en) * | 2011-11-18 | 2013-05-29 | 无锡华润上华科技有限公司 | Aluminum interconnecting wire and preparation method thereof |
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