CN103715121A - Wafer loading method - Google Patents
Wafer loading method Download PDFInfo
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- CN103715121A CN103715121A CN201210379381.XA CN201210379381A CN103715121A CN 103715121 A CN103715121 A CN 103715121A CN 201210379381 A CN201210379381 A CN 201210379381A CN 103715121 A CN103715121 A CN 103715121A
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- wafer
- manipulator
- electrostatic chuck
- load method
- sheet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
This invention discloses a wafer loading method which is applicable to a thin type wafer. The wafer loading method increases ascending distance and reduces ascending speed of a mechanical hand during a sheet-taking process, so that the damage caused by collision when the mechanical hand is in contact with the wafer is reduced. In the meantime, the static electricity adsorption force of an electrostatic chuck fixing the wafer is increased, which guarantees that the displacement of the wafer in the technology process is not happened, reduces damages during loading process of the wafer technology and improves the technology quality.
Description
Technical field
The present invention relates to a kind of production process of semiconductor, specifically, is a kind of wafer load method in thin slice technique.
Background technology
In fabrication of semiconductor device, in order to obtain good mechanical performance, electrical property, and the needs of subsequent machining technology, generally need to be by product sheet attenuate, the thickness after attenuate is conventionally in 200-400 micron left and right.And for some special semiconductor device, especially some power semiconductors, in order to obtain thinner chip, or in order to meet the requirement of more excellent electrical property, need to the thickness of product sheet be subtracted thinlyyer, such as reaching 200 microns, even reach below below 100 microns, be processed into so-called superthin section, and also will carry out the processes such as Implantation, dry etching after attenuate.
Before carrying out these processing technologys, conventionally need to be by wafer in the processing chamber of disk support device.Fig. 1 and Fig. 2 are respectively the structural representations of a kind of conventional manipulator and processing chamber.As shown in Figure 1, comprise the load bearing arm 7 that carrying wafer is used, and be distributed in the some pores on manipulator on manipulator 8, just there is air-channel system this manipulator inside, is connected on an air valve, and bleeding of through hole air valve can form negative pressure on pore.While getting sheet, manipulator 8 is moved to wafer below and starts air extractor, by wafer adsorption on load bearing arm 7.Then mobile manipulator, by wafer load in processing chamber as shown in Figure 2.Wherein this processing chamber comprises the state space 2 being surrounded by chamber arm 1, be arranged on the electrostatic chuck (E-chuck) 3 in this state space 2, at this electrostatic chuck 3, comprise surperficial electrode, a plurality of pores, inside is connected to the cooling gas circuit on the plurality of pore, be connected to intake valve 11 and extraction valve 10 in this cooling gas circuit, be connected to the refrigerating gas He source 4 on intake valve, and be connected on electrostatic chuck 3 via RF filter 5 for the DC power supply unit 12 of Electrostatic Absorption.
Yet just shown in Fig. 1 and Fig. 2, get sheet and fixed mechanism, when for wafer, there will be following problem:
First: manipulator 8, in getting sheet engineering, needs first from the below of wafer, to go deep into disk support, and the contact target that then moves up wafer, adsorbs.Because manipulator is in uphill process, the too short and excessive velocities of stroke, causes inertia excessive and still have the rate of climb in the moment of contact wafer, so easily causes the breakage of thin wafer;
Second: when wafer device is on electrostatic chuck 3 time, the parameter of existing electrostatic chuck 3 is all the wafer design with stock size, not for extra-thin wafer, therefore easily produce adsorption strength inadequate, make wafer that displacement occur when processes and make technique failure, causing useless sheet.
Therefore be necessary existing wafer load technique to propose to improve the damage forming to overcome slim wafer in getting sheet and load process.
Summary of the invention
In view of this, the present invention proposes a kind of wafer load method in semiconducter process, the damage that the method can avoid wafer to produce in getting sheet and fixing process, thus the quality of semiconducter process is provided.
A kind of wafer load method proposing according to object of the present invention, comprises step:
According to disk support model, that sets manipulator gets sheet parameter, and this parameter comprises upward stroke and the rate of climb of manipulator, and wherein upward stroke is greater than half of adjacent wafers spacing in disk support;
With the described sheet parameter operation control manipulator of getting, wafer is transferred to electrostatic chuck from wafer support;
Open absorption voltage, power is increased to 1500w-1900w, wafer is fixed on electrostatic chuck;
With above-mentioned power, to after wafer absorption 750s, this wafer is implemented to semiconducter process;
After above-mentioned semiconducter process finishes, control electrostatic chuck and discharge, to eliminate the absorption affinity to wafer;
Take out wafer.
Preferably, the upward stroke of described manipulator is no more than 3/4 of upper and lower wafer pitch.
Preferably, the rate of climb of described manipulator is 1cm/s.
Preferably, the power of described electrostatic chuck is 1800w.
Preferably, further can comprise the step that wafer rear is passed into cooling He.
Preferably, the air pressure of described He is 1.2 millibars.
Preferably, be greater than 60 seconds described discharge time.
The present invention by semiconductor technology to wafer get sheet and the stowage such as fixing is improved, upward stroke increasing and the speed of getting manipulator in sheet process are slowed down, while making manipulator contact wafer, clashing into the damage producing reduces, strengthen the Electrostatic Absorption power of electrostatic chuck when fixing wafer simultaneously, guarantee that in technical process, wafer can not produce displacement, the damage that produce of whole wafer process in loading process reduced, and then improved the quality of technique.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is existing robot manipulator structure schematic diagram;
Fig. 2 is existing electrostatic suction cup structure schematic diagram;
Fig. 3 is the schematic flow sheet of wafer load method of the present invention.
Embodiment
As described in the background art, existing wafer is got sheet and fixing technique, do not have for slim wafer, to carry out independent design specially, all technological parameters are all to operate with the identical specification of conventional wafer with step, easily cause the damage of slim wafer.
Therefore the object of the invention is to propose the slim wafer stowage in a kind of semiconductor fabrication process, especially, in technical processs such as Implantation, plasma etching, need to use electrostatic chuck and carry out the fixing technique of wafer.By method of the present invention, the damage that can effectively avoid slim wafer to produce in getting sheet and load process.
An improvement of the present invention is, at manipulator, carry out getting in sheet process of wafer, increase the upward stroke of manipulator, and slow down the speed that manipulator rises simultaneously, inertia is mechanically reduced, in contact wafer, guarantee that wafer can not produce because of the shock of manipulator damage.
Another improvement of the present invention is, after wafer is loaded into electrostatic chuck by manipulator, strengthen the static power of electrostatic chuck, make the Electrostatic Absorption power of generation enough large, strengthen the time of Electrostatic Absorption simultaneously, the constant intensity of guaranteeing wafer can not produce displacement in technical process, thereby avoids wafer in the course of processing, to form damage.
Refer to Fig. 3, Fig. 3 is the schematic flow sheet of wafer stowage of the present invention.As shown in the figure, wafer stowage of the present invention comprises the steps:
S1: according to disk support model, that sets manipulator gets sheet parameter, and this parameter comprises upward stroke and the rate of climb of manipulator, wherein upward stroke is greater than in disk support half of spacing between adjacent two wafer.
S2: control manipulator and move with the sheet parameter of getting in step S1, wafer is transferred to electrostatic chuck from wafer support.
S3: open absorption voltage, power is increased to 1500w-1900w, wafer is fixed on electrostatic chuck.
S4: to after wafer absorption 750s, this wafer is implemented to semiconductor processing technology with above-mentioned power.
S5: after above-mentioned semiconducter process finishes, control electrostatic chuck and discharge, to eliminate the absorption affinity to wafer, be greater than 60s this discharge time.
S6: take out wafer.
In above-mentioned steps S3 and S4 process, further can comprise the step that wafer rear is passed into cooling He.This step can help wafer at some heat processing techniques, such as etching technics etc., avoids Yin Gaowen and the problem of the crystal column surface device failure that causes.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Because the present invention changes the hardware using in implementation process, so manipulator used in the present invention and electrostatic chuck refer to Fig. 1 and Fig. 2.
That first, need to determine manipulator according to the gauge size of wafer support gets sheet parameter.Be subject to the impact of the size of wafer own, such as 4 chi wafers and 8 chi wafers, the disk support of placing wafer also has the specification of different size conventionally, and polylith wafer is on disk support time, is with upper and lower parallel and exist each other the form of certain spacing distance to arrange.When manipulator 8 need to be got sheet, first load bearing arm 7 is extend into the below of target wafer.In existing technique, in order to reduce getting the sheet time of manipulator, the distance (be upward stroke) of this manipulator 8 below wafer is less than half of upper and lower wafer pitch conventionally.And in the present invention, 7 of the load bearing arms of this manipulator 8 need to move to wafer below and be greater than half place of upper and lower wafer pitch, just start rising.So just greatly increase the upward stroke of manipulator, made the drive unit of this manipulator there is good buffer distance, reduced the collision momentum between that inertia because of manipulator brings and wafer.
When concrete this manipulator 8 of control reaches target location, can first allow the load bearing arm of this manipulator extend into any position, wafer below, then according to a measurement mechanism, measure now whether reach desired stroke distances with the distance of wafer.If reached, the control of rising; If also do not reached, control this manipulator and decline, until reach desired stroke distances.
Can certainly control that this manipulator is disposable reaches desired stroke distances, and then the load bearing arm of manipulator 87 is extend into wafer below.
It is pointed out that the stroke distances of this manipulator below wafer can not surpass the spacing between two wafer, otherwise can affect the load ability of disk support.More preferably, the distance that this manipulator is positioned at wafer below is no more than 3/4 of upper and lower wafer pitch.The space staying can guarantee that manipulator can not touch below wafer.The disk support that a kind of upper and lower wafer pitch of take is 4cm is example.Manipulator 8 extend into the distance of wafer below preferably between 2cm to 3cm.
In manipulator 8 uphill process, need to move with slower speed, the momentum that this speed preferably makes manipulator 8 produce is not enough to damage wafer, even like this under the impact of inertia or journey error, manipulator 8 also with certain momentum, also can avoid wafer to damage because of the shock of manipulator in contact wafer.More preferably, this speed ratio 1cm/s in this way.More preferably, before manipulator contact wafer, brake mechanism just can be braked the drive motors of manipulator, and to guarantee manipulator contact wafer in a flash, speed is minimum.
After manipulator 8 contact wafers, the outside vacuum extractor being connected on manipulator 8 comes into operation, and the pore being distributed on manipulator 8 forms negative pressure, and wafer is absorbed and fixed on manipulator 8.
Then this manipulator 8 is transferred to wafer the electrostatic chuck 3 of processing chamber 2 from disk support.After electrostatic chuck 3 detects wafer, start DC power supply unit 12, produce Electrostatic Absorption power, fix this wafer.In the present invention, proposed the Electrostatic Absorption power larger than the Electrostatic Absorption power (1200W) of common wafer, because slim wafer, the intrinsic warpage of itself is more serious.In the inadequate situation of Electrostatic Absorption power, wafer cannot fit in the surface of electrostatic chuck 3, can have a strong impact on constant intensity like this, in technical process, when accepting plasma bombardment, easily produces displacement, and then causes scrapping of wafer.Therefore strengthen Electrostatic Absorption power, make wafer can be close to the surface of electrostatic chuck 3, the success rate of wafer process is had to larger help.Yet it is pointed out that excessive electrostatic potential also can cause the damage of crystal column surface device, under the electrostatic potential that therefore need to can bear at wafer, improve this Electrostatic Absorption power, in the present invention, the power of DC power supply unit 12 is 1500W to 1900W, more preferably, can be set as 1800W.
In addition fix also the play crucial effect of the time of Electrostatic Absorption to wafer.In existing technology, after wafer 20S by electrostatic adsorption, just start to carry out processing technology.The displacement problem that easily produces in this case wafer adsorption shakiness and cause, in the present invention, this adsorption time is promoted to 750S, has greatly improved the stability of wafer adsorption, guaranteeing just to start technique in the situation that wafer effectively fixedly, the technique yield of wafer is further promoted.
In carrying out machining process, He source 4 leads to cooling He gas by 11 pairs of wafer rears of intake valve, and follows bad by extraction valve 10.The effect of back of the body He can prevent the device failure that crystal column surface causes because of excess Temperature.But carrying on the back He can fixedly exert an influence to wafer again simultaneously in the absorption on electrostatic chuck 3.Under existing thick wafer process, the air pressure of back of the body He reaches 1.8 millibars.Yet for slim wafer, cooling required gas flow ratio general wafer is little.Therefore in the present invention, the air pressure of back of the body He is controlled to 1.2 millibars, can realizes cooling to wafer, make again gas further reduce the impact of Electrostatic Absorption intensity, can effectively improve the quality of technique.
After technique finishes, before taking out wafer, also need the static on electrostatic chuck 3 to carry out discharge process, be controlled at discharge time more than 60 seconds, till discharging completely with static.More preferably, be controlled at 120 seconds discharge time, can guarantee that the static on electrostatic chuck 3 is released completely.Like this when getting sheet, can be because of the absorption of residual static electricity, and there is the damage to wafer.
In sum, the present invention by semiconductor technology to wafer get sheet and the stowage such as fixing is improved, upward stroke increasing and the speed of getting manipulator in sheet process are slowed down, while making manipulator contact wafer, clashing into the damage producing reduces, strengthen the Electrostatic Absorption power of electrostatic chuck when fixing wafer simultaneously, guarantee that in technical process, wafer can not produce displacement, the damage that produce of whole wafer process in loading process reduced, and then improved the quality of technique.
Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. a wafer load method, is characterized in that, comprises step:
According to disk support model, that sets manipulator gets sheet parameter, and this parameter comprises upward stroke and the rate of climb of manipulator, and wherein upward stroke is greater than half of adjacent wafers spacing in disk support;
With the described sheet parameter operation control manipulator of getting, wafer is transferred to electrostatic chuck from wafer support;
Open absorption voltage, power is increased to 1500w-1900w, wafer is fixed on electrostatic chuck;
With above-mentioned power, to after wafer absorption 750s, this wafer is implemented to semiconducter process;
After above-mentioned semiconducter process finishes, control electrostatic chuck and discharge, to eliminate the absorption affinity to wafer;
Take out wafer.
2. wafer load method as claimed in claim 1, is characterized in that: the upward stroke of described manipulator is no more than 3/4 of upper and lower wafer pitch.
3. wafer load method as claimed in claim 1, is characterized in that: the rate of climb of described manipulator is 1cm/s.
4. wafer load method as claimed in claim 1, is characterized in that: the power of described electrostatic chuck is 1800w.
5. wafer load method as claimed in claim 1, is characterized in that: further can comprise the step that wafer rear is passed into cooling He.
6. wafer load method as claimed in claim 5, is characterized in that: the air pressure of described He is 1.2 millibars.
7. wafer load method as claimed in claim 1, is characterized in that: be greater than 60 seconds described discharge time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210379381.XA CN103715121B (en) | 2012-09-29 | 2012-09-29 | A kind of wafer load method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210379381.XA CN103715121B (en) | 2012-09-29 | 2012-09-29 | A kind of wafer load method |
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| CN103715121A true CN103715121A (en) | 2014-04-09 |
| CN103715121B CN103715121B (en) | 2016-07-06 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546170A (en) * | 2016-06-29 | 2018-01-05 | 北京北方华创微电子装备有限公司 | The method, apparatus and semiconductor processing equipment of electrostatic chuck voltage are set |
| CN108962794A (en) * | 2018-07-20 | 2018-12-07 | 北京北方华创微电子装备有限公司 | A kind of liter of needle method and the thimble lifting device for applying it |
| CN110416132A (en) * | 2019-08-20 | 2019-11-05 | 上海新傲科技股份有限公司 | The method of load in semiconductor stripping technology |
| CN111799201A (en) * | 2020-07-14 | 2020-10-20 | 苏州太阳井新能源有限公司 | Last unloading buffer memory mechanism with environmental control |
| CN113838791A (en) * | 2021-08-30 | 2021-12-24 | 威科赛乐微电子股份有限公司 | Wafer taking and circle center positioning device, method, system and readable storage medium |
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| JPH0426138A (en) * | 1990-05-21 | 1992-01-29 | Tokyo Electron Sagami Ltd | Conveyor for platelike element |
| JPH04311056A (en) * | 1991-04-08 | 1992-11-02 | Dainippon Screen Mfg Co Ltd | Board unloading device |
| US20090196714A1 (en) * | 2006-06-09 | 2009-08-06 | Raphael Sylvestre | Device for the transport, storage, and transfer of substrates |
| KR20100069893A (en) * | 2008-12-17 | 2010-06-25 | 주식회사 동부하이텍 | Apparatus and method for transferring wafer |
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2012
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0426138A (en) * | 1990-05-21 | 1992-01-29 | Tokyo Electron Sagami Ltd | Conveyor for platelike element |
| JPH04311056A (en) * | 1991-04-08 | 1992-11-02 | Dainippon Screen Mfg Co Ltd | Board unloading device |
| US20090196714A1 (en) * | 2006-06-09 | 2009-08-06 | Raphael Sylvestre | Device for the transport, storage, and transfer of substrates |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546170A (en) * | 2016-06-29 | 2018-01-05 | 北京北方华创微电子装备有限公司 | The method, apparatus and semiconductor processing equipment of electrostatic chuck voltage are set |
| CN107546170B (en) * | 2016-06-29 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Method and device for setting electrostatic chuck voltage and semiconductor processing equipment |
| CN108962794A (en) * | 2018-07-20 | 2018-12-07 | 北京北方华创微电子装备有限公司 | A kind of liter of needle method and the thimble lifting device for applying it |
| CN110416132A (en) * | 2019-08-20 | 2019-11-05 | 上海新傲科技股份有限公司 | The method of load in semiconductor stripping technology |
| CN111799201A (en) * | 2020-07-14 | 2020-10-20 | 苏州太阳井新能源有限公司 | Last unloading buffer memory mechanism with environmental control |
| CN113838791A (en) * | 2021-08-30 | 2021-12-24 | 威科赛乐微电子股份有限公司 | Wafer taking and circle center positioning device, method, system and readable storage medium |
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| CN103715121B (en) | 2016-07-06 |
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Effective date of registration: 20171214 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |
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