CN103713439B - The flexible stealthy device of a kind of adjustable infrared emittance and assemble method thereof - Google Patents
The flexible stealthy device of a kind of adjustable infrared emittance and assemble method thereof Download PDFInfo
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- CN103713439B CN103713439B CN201310698211.2A CN201310698211A CN103713439B CN 103713439 B CN103713439 B CN 103713439B CN 201310698211 A CN201310698211 A CN 201310698211A CN 103713439 B CN103713439 B CN 103713439B
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Abstract
The present invention relates to the flexible stealthy device of a kind of adjustable infrared emittance, belong to electrochromic device preparing technical field.This device includes eight layers of sandwich structure, it is infrared transparent polymer encapsulated layer, activity photochromic layer, metal electrode and reflecting layer, porous membrane support the most respectively, is adsorbed with the separate layer of polyelectrolyte, ion storage layer, metal electrode, backing material and infrared transparent polymer encapsulated layer, wherein being adsorbed with the separate layer of polyelectrolyte by two part adhesive up and down of device together, device assembles the mode using layer assembly from bottom to up.The electrochromic device that the present invention provides has flexible, the feature of lamellar structure.The thickness size of device is less than 1 millimeter, and the gross thickness of each functional layer is less than 0.2 millimeter.This device is to the modulation capability of infrared reflectivity and emissivity up to about 50%, and its pliable and tough mechanical performance can expand its practical field further.
Description
Technical field
The present invention relates to the flexible stealthy device of a kind of adjustable infrared emittance and assemble method thereof, belong to electrochromic device system
Standby technical field, especially for the military target stealthy application to infrared guidance guided missile.
Background technology
The difference of infrared emission feature Yu surrounding infrared emittance by reducing military target, can realize military target
Stealthy to infrared guidance guided missile, thus improve the military target survival rate in battlefield.The optical characteristics of electrochromic material
(color, transparency and reflectance etc.) can realize reversible change under extra electric field, its INFRARED ABSORPTION and emissivity
Can also regulate and control by changing voltage, be a kind of quick, efficient and the stealth technology of low cost.In addition, electricity
Mutagens color device has the features such as running voltage is low, energy consumption is little, low cost, at display device, smart window, anti-dazzle vapour
The fields such as car rearview mirror have a wide range of applications.
The Infrared stealthy materials of existing military target and device mainly have two kinds: one to be by having in military target surface-coated
The coating of different infrared emittance, i.e. Thermal camouflage is had to realize the infrared emission feature of military target and infrared of environment
Penetrate feature close, reach stealthy purpose.But with environment and the minor variations of temperature, this camouflage is easy to lose efficacy, and needs
Coating to be re-started；Another infrared reflection electrochromic device, though can the infrared emission of adjusting means in real time
Rate, but owing to the incomplete metal grate electrode of infrared transparent of construction features one and the backing material of high index of refraction of device are made
Becoming the loss of signal in interface, the infrared emittance modulation capability of device is limited (15%-30%), it is difficult to meet reality
The requirement (the infrared emission modulation rate more than 30%) used.The most existing infrared emission modulation device have weight big,
Be not easily assembled the deficiencies such as there is abnormally-structured device, development have contrast height, light weight, different, even have
The flexible infrared stealth device of deflection will greatly advance the practical of this infrared stealth device.
Summary of the invention
It is an object of the invention to provide the flexible stealthy device of a kind of novel adjustable infrared emittance and assemble method thereof, carried
The electrochromic device of confession has the sandwich structure of multilamellar and flexible flexible characteristic.The device that the present invention assembles can be real
Infrared guidance guided missile working sensor wave band (3-5 micron) interior infrared emittance or the efficient regulation of reflectance now, its
Contrast, up to about 50%, can meet actually used requirement completely.
To achieve these goals, technical scheme is as follows.
The flexible stealthy device of a kind of adjustable infrared emittance, including eight layers of sandwich structure, is infrared the most respectively
Bright polymer encapsulation layer, activity photochromic layer, metal electrode and reflecting layer, porous membrane support, be adsorbed with polyelectrolyte point
Interlayer, ion storage layer, metal electrode, backing material and infrared transparent polymer encapsulated layer, be wherein adsorbed with poly-electrolysis
By two part adhesive up and down of device together, device assembles the side using layer assembly from bottom to up to the separate layer of matter
Formula.
Further, described activity photochromic layer and ion storage layer are for using electrochemical polymerization or solution coating to obtain with lifting
Conducting polymer, described conducting polymer be polyaniline, polythiophene, polypyrrole, poly-(3,4-Ethylenedioxy Thiophene)-
Poly-(styrene sulfonic acid) or derivatives thereof thin film.
Further, metal electrode and reflecting layer are that to use heat evaporation or the thickness prepared of ion sputtering process be 50～200 to receive
The high infrared reflection rate of rice and the metal film of high conductivity, described metal film is gold, silver or aluminum.
Further, porous membrane support be thickness be 20～50 microns, aperture is the poly-carbonic acid of 500 nanometers to 20 microns
Ester film, polyvinylidene chlorida film, polyimide film, hole therein is entered by migration pattern for device operation intermediate ion
Go out activity photochromic layer.
Further, the separate layer of polyelectrolyte it is adsorbed with for by polycarbonate membrane, polyvinylidene chlorida film, polyimide film
Or filter paper perforated membrane, and it is adsorbed with Allyl carbonate, polymethyl methacrylate, lithium perchlorate and the gel of acetonitrile composition
Polyelectrolyte.In described polyelectrolyte, the mass percent of lithium perchlorate is 1%～10%, the matter of polymethyl methacrylate
Amount percentage ratio be 10%～30%, the mass percent of Allyl carbonate is 5%～20%, the mass percent of acetonitrile be 40%～
84%.
Further, metal electrode is the metallic film of thickness 50～60 nanometer, and described metallic film is gold, silver or aluminum,
Metal electrode is obtained by the method for hot AM aluminum metallization or ion sputtering gold or platinum.
Further, backing material is TPO flexible polymeric film, to the direct device with aluminum foil metal thin film as electrode
Part, backing material omits.
Further, infrared transparent polymer encapsulated layer is by having the Low Density Polyethylene of low ir-absorbance and other is simple
Polyolefin forms, and the thickness of infrared transparent polymer encapsulated layer is at 20 microns.
The assemble method of the flexible stealthy device of above-mentioned adjustable infrared emittance, specifically includes following steps:
(1) deposit metal electrodes and infrared reflecting layer in porous membrane support, porous film surface use heat evaporation or from
The methods such as sub-sputtering form the thickness metal level in 50 to 200 nanometer thickness as metal electrode, the material of described metal level
For gold, silver or aluminum, this electrode is simultaneously as the infrared reflecting layer of device.
(2) preparation of activity photochromic layer, prepares thickness in 500 nanometers to 2 on the metal electrode that step (1) obtains
Particulate active photochromic layer, photochromic layer uses coating conductive polymer solution and electrochemical polymerization method to prepare on electrode.
(3) preparation of the separate layer of polyelectrolyte it is adsorbed with, by lithium perchlorate that mass percent is 1%～10%, quality
Allyl carbonate and the quality hundred that polymethyl methacrylate that percentage ratio is 10%～30%, mass percent are 5%～20%
After proportion by subtraction is the acetonitrile mix homogeneously of 40%～84%, immerses polyelectrolyte solution is formed by filter paper or other porous membrane and inhale
Separate layer with polyelectrolyte.
(4) rely on the metal electrode of backing material and the preparation of ion storage layer, be deposited with by heat and ion sputtering etc.
Method forms the metal level of high connductivity as electrode on flexible material, and described flexible material is polyethylene, polypropylene and polyester,
To the device with aluminium foil as metal electrode, its backing material can omit；Finally on metal electrode, prepare thickness 500
Nanometer is to 2 microns of ion storage layer, and ion storage layer can be by carrying out electrode in conductive polymer solution or dispersion liquid
Lifting, or use coating conductive polymer solution and electrochemical polymerization method to prepare on electrode.
(5) assembling of device and encapsulation.Order from bottom to up by infrared transparent polymer encapsulated layer, backing material,
Metal electrode, ion storage layer, be adsorbed with the separate layer of polyelectrolyte, porous membrane support, metal electrode and reflecting layer,
Activity photochromic layer and infrared transparent polymer encapsulated layer are laminated together, will be supported in being adsorbed with the separate layer of polyelectrolyte
Up and down the two of metal electrode on perforated membrane and photochromic activity layer and the metal electrode being supported on substrate and ion storage layer
Individual it is partially bonded together, with thin polymer film, whole device cladding is got up also after two metal electrodes are drawn respectively wire
Heat-sealing.
This beneficial effect of the invention is: the electrochromic device that the present invention provides is flexible, the sandwich thin layer of deflection
Structure, activity photochromic layer is not between two electrodes, and ion moves to activity photochromic layer by the hole of perforated membrane and realizes
Modulation to infrared light.Resulting devices has flexible, the feature of lamellar structure.The thickness size of device is less than 1 milli
Rice, the gross thickness of each functional layer is less than 0.2 millimeter.The modulation capability to infrared reflectivity and emissivity of this device can
Reaching about 50%, its pliable and tough mechanical performance can expand its practical field further.
Accompanying drawing explanation
Fig. 1 is the structural representation of the flexible stealthy device of adjustable infrared emittance in the embodiment of the present invention.
Fig. 2 is that the device assembled in the embodiment of the present invention 1 is anti-to wavelength infrared light between 3～5 microns under different voltages
Penetrate the adjustment curve of rate.
Description of symbols in figure, 1, activity photochromic layer；2, metal electrode and reflecting layer；3, porous membrane support；4, absorption
There is the separate layer of polyelectrolyte；5, ion storage layer；6, metal electrode；7, backing material；8, infrared transparent polymerization
Thing encapsulated layer.
Detailed description of the invention
With embodiment, the detailed description of the invention of the present invention is described below in conjunction with the accompanying drawings, in order to be better understood from this
Bright.
Embodiment 1:
Fig. 1 show the structural representation of the flexible stealthy device of adjustable infrared emittance that the present invention provides, including eight layer three
Mingzhi's structure, each layer comprised in Fig. 1 be the most respectively infrared transparent polymer encapsulated layer 8, activity photochromic layer 1,
Metal electrode and reflecting layer 2, porous membrane support 3, it is adsorbed with the separate layer 4 of polyelectrolyte, ion storage layer 5, metal
Electrode 6, backing material 7 and infrared transparent polymer encapsulated layer 8, be wherein adsorbed with the separate layer 4 of polyelectrolyte by device
Together, device assembles the mode using layer assembly from bottom to up to two part adhesive up and down of part, and resulting devices has
There is flexible, the feature of lamellar structure.The thickness size of device 0.8 millimeter, gross thickness 0.15 milli of each functional layer
Rice.Fig. 2 be the device assembled in the present embodiment under different voltages to wavelength infrared reflectivity between 3～5 microns
Adjustment curve.The modulation capability to infrared reflectivity and emissivity of this device up to about 52%, its pliable and tough machinery
Performance can expand its practical field further.
Described activity photochromic layer 1 and ion storage layer 5 are the conduction using electrochemical polymerization or solution coating to obtain with lifting
Polymer, described conducting polymer is polyaniline, polythiophene, polypyrrole or derivatives thereof thin film.
Described metal electrode and reflecting layer 2 are the Gao Hong that thickness is 50 nanometers using heat evaporation or ion sputtering process to prepare
External reflectance rate and the metal film of high conductivity, described metal film is gold, silver and aluminum etc..
Described porous membrane support 3 is 20 microns for thickness, and aperture is the polycarbonate membrane of 20 microns, and hole therein supplies
Device operation intermediate ion is by migrating into and out activity photochromic layer.
The described separate layer 4 being adsorbed with polyelectrolyte is by polycarbonate membrane perforated membrane, and is adsorbed with Allyl carbonate, gathers
Methyl methacrylate, lithium perchlorate and the gel polyelectrolyte of acetonitrile composition.The matter of lithium perchlorate in described polyelectrolyte
Amount percentage ratio is 4%, and the mass percent of polymethyl methacrylate is 15%, and the mass percent of Allyl carbonate is
20%, the mass percent of acetonitrile is 61%.
Described metal electrode 6 is the metallic film (gold, silver or aluminum etc.) of thickness 60 nanometer, and metal electrode is deposited with by heat
The method of (aluminum) or ion sputtering (gold or platinum) obtains.
Described backing material 7 is TPO flexible polymeric film, to the direct device with metallic films such as aluminium foils as electrode,
Backing material can omit.
Described infrared transparent polymer encapsulated layer 8 is by Low Density Polyethylene and other simple polyene with low ir-absorbance
Hydrocarbon forms, and the thickness of thin polymer film is at 20 microns.
The assemble method of the flexible stealthy device of above-mentioned adjustable infrared emittance, specifically includes following steps:
(1) deposit metal electrodes and infrared reflecting layer 2 in porous membrane support 3, porous film surface use heat evaporation or
The method such as ion sputtering forms the thickness metal level (gold, silver or aluminum) in 50 nanometer thickness as metal electrode, this electrode
Infrared reflecting layer simultaneously as device.
(2) preparation of activity photochromic layer 1, prepares thickness on the metal electrode that step (1) obtains and lives in 500 nanometers
Property photochromic layer 1, photochromic layer by lifting in conductive polymer solution or dispersion liquid, or can use coating conduction poly-
Polymer solution and electrochemical polymerization method are prepared on electrode.
(3) preparation of the separate layer 4 of polyelectrolyte it is adsorbed with, by lithium perchlorate that mass percent is 4%, quality hundred
Proportion by subtraction be 15% polymethyl methacrylate, mass percent be 20% Allyl carbonate and mass percent be 61%
Acetonitrile mix homogeneously after, immerse porous membrane polyelectrolyte solution is formed and be adsorbed with the separate layer of polyelectrolyte.
(4) metal electrode 6 and the preparation of ion storage layer 5 of backing material are relied on.It is deposited with by heat and ion spatters
The method such as penetrate at the upper metal level forming high connductivity of flexible material (polyethylene, polypropylene or polyester etc.) as electrode, to
Aluminium foil is the device of metal electrode, and its backing material can omit.Finally use the method similar to step 2 at metal electricity
Prepare thickness on extremely in 500 nanoparticle storage layer, ion storage layer can by by electrode conductive polymer solution or point
Dissipate in liquid and lift, or use coating conductive polymer solution and electrochemical polymerization method to prepare on electrode.
(5) assembling of device and encapsulation.To respectively be pressed together layer by layer by Fig. 1 order from bottom to up, poly-to be adsorbed with
The separate layer of electrolyte is by upper and lower two parts (metal electrode being supported on perforated membrane and photochromic activity layer and be supported in lining
Metal electrode at the end and ion storage layer) combine, use polymer thin after two metal electrodes are drawn wire respectively
Whole device cladding is got up and seals by film.
Embodiment 2:
Fig. 1 show the structural representation of the flexible stealthy device of adjustable infrared emittance that the present invention provides, including eight layer three
Mingzhi's structure, each layer comprised in Fig. 1 be the most respectively infrared transparent polymer encapsulated layer 8, activity photochromic layer 1,
Metal electrode and reflecting layer 2, porous membrane support 3, it is adsorbed with the separate layer 4 of polyelectrolyte, ion storage layer 5, metal
Electrode 6, backing material 7 and infrared transparent polymer encapsulated layer 8, be wherein adsorbed with the separate layer 4 of polyelectrolyte by device
Together, device assembles the mode using layer assembly from bottom to up to two part adhesive up and down of part, and resulting devices has
There is flexible, the feature of lamellar structure.The thickness size of device 0.9 millimeter, gross thickness 0.18 milli of each functional layer
Rice.The modulation capability to infrared reflectivity and emissivity of this device is up to 53%, and its pliable and tough mechanical performance can enter one
Step expands its practical field.
Described activity photochromic layer 1 and ion storage layer 5 are the conduction using electrochemical polymerization or solution coating to obtain with lifting
Polymer, described conducting polymer is poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) and derivative film thereof.
Described metal electrode and reflecting layer 2 are the Gao Hong that thickness is 200 nanometers using heat evaporation or ion sputtering process to prepare
External reflectance rate and the metal film of high conductivity, described metal film is gold, silver or aluminum etc..
Described porous membrane support 3 is 50 microns for thickness, and aperture is the polyimide film of 20 microns, and hole therein supplies
Device operation intermediate ion is by migrating into and out activity photochromic layer.
The described separate layer 4 of polyelectrolyte that is adsorbed with is for by polycarbonate membrane, polyvinylidene chlorida film, polyimide film and filter
The perforated membranes such as paper, and the gel being adsorbed with Allyl carbonate, polymethyl methacrylate, lithium perchlorate and acetonitrile composition is poly-
Electrolyte.In described polyelectrolyte, the mass percent of lithium perchlorate is 2%, the mass percent of polymethyl methacrylate
Being 10%, the mass percent of Allyl carbonate is 10%, and the mass percent of acetonitrile is 78%.
Described metal electrode 6 is the metallic film (gold, silver or aluminum etc.) of thickness 55 nanometer, and metal electrode is deposited with by heat
The method of (aluminum) or ion sputtering (gold or platinum) obtains.
Described backing material 7 is TPO flexible polymeric film, to the direct device with metallic films such as aluminium foils as electrode,
Backing material can omit.
Described infrared transparent polymer encapsulated layer 8 is by Low Density Polyethylene and other simple polyene with low ir-absorbance
Hydrocarbon forms, and the thickness of thin polymer film is at 20 microns.
The assemble method of the flexible stealthy device of above-mentioned adjustable infrared emittance, specifically includes following steps:
(1) deposit metal electrodes and infrared reflecting layer 2 in porous membrane support 3, porous film surface use heat evaporation or
The method such as ion sputtering forms the thickness metal level (gold, silver or aluminum) in 100 nanometer thickness as metal electrode, this electrode
Infrared reflecting layer simultaneously as device.
(2) preparation of activity photochromic layer 1, prepares thickness in 500 nanometers extremely on the metal electrode that step (1) obtains
2 particulate active photochromic layers 1, photochromic layer uses coating conductive polymer solution and electrochemical polymerization method to prepare on electrode.
(3) preparation of the separate layer 4 of polyelectrolyte it is adsorbed with, by lithium perchlorate that mass percent is 2%, quality hundred
Proportion by subtraction be polymethyl methacrylate, the Allyl carbonate of mass percent 10% and the mass percent of 10% be 78% acetonitrile
After mix homogeneously, filter paper is immersed polyelectrolyte solution is formed the separate layer being adsorbed with polyelectrolyte.
(4) rely on metal electrode 6 and the preparation of ion storage layer 5 of backing material, be deposited with by heat and ion spatters
The method such as penetrate at the upper metal level of high connductivity that formed of flexible material (polyethylene, polypropylene or polyester etc.) as electrode.Finally
Use the method similar to step 2 to prepare thickness on metal electrode can lead in 2 microns of ion storage layer, ion storage layer
Cross and electrode is lifted in conductive polymer solution or dispersion liquid, or use coating conductive polymer solution and electrification
Learn polymerization to prepare on electrode.
(5) assembling of device and encapsulation, will be respectively pressed together layer by layer by Fig. 1 order from bottom to up, poly-to be adsorbed with
The separate layer of electrolyte is by upper and lower two parts (metal electrode being supported on perforated membrane and photochromic activity layer and be supported in lining
Metal electrode at the end and ion storage layer) combine, use polymer thin after two metal electrodes are drawn wire respectively
Whole device cladding is got up and seals by film.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art,
Under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications are also considered as this
The protection domain of invention.
Claims (2)
1. the flexible stealthy device of adjustable infrared emittance, it is characterised in that: include eight layers of sandwich structure, from upper
To lower be infrared transparent polymer encapsulated layer, activity photochromic layer, metal electrode and reflecting layer, porous membrane support, suction respectively
With separate layer, ion storage layer, metal electrode, backing material and the infrared transparent polymer encapsulated layer of polyelectrolyte,
Wherein be adsorbed with the separate layer of polyelectrolyte by two part adhesive up and down of device together, device assemble use from down to
On the mode of layer assembly；
Described activity photochromic layer and ion storage layer are to use electrochemical polymerization or solution coating to gather with the conduction that lifting obtains
Compound thin film, described conducting polymer is polyaniline, polythiophene, polypyrrole, poly-(3,4-Ethylenedioxy Thiophene)-poly-(benzene
Vinyl sulfonic acid) or their derivative film；
Described metal electrode and reflecting layer are the height that thickness is 50～200 nanometers using heat evaporation or ion sputtering process to prepare
Infrared reflectivity and the metal film of high conductivity, described metal film is gold, silver or aluminum；
Described porous membrane support be thickness be 20～50 microns, aperture be 500 nanometers to 20 microns polycarbonate membrane,
Polyvinylidene chlorida film, polyimide film, hole therein is active by migration pattern turnover for device operation intermediate ion
Photochromic layer；
The described separate layer of polyelectrolyte that is adsorbed with is for by polycarbonate membrane, polyvinylidene chlorida film, polyimide film or filter paper
Perforated membrane, and it is adsorbed with the poly-electrolysis of gel of Allyl carbonate, polymethyl methacrylate, lithium perchlorate and acetonitrile composition
Matter forms；In described polyelectrolyte, the mass percent of lithium perchlorate is 1%～10%, the quality of polymethyl methacrylate
Percentage ratio is 10%～30%, and the mass percent of Allyl carbonate is 5%～20%, the mass percent of acetonitrile be 40%～
84%；
Described metal electrode is the metallic film of thickness 50～60 nanometer, and described metallic film is gold, silver or aluminum, metal
Electrode is obtained by the method for hot AM aluminum metallization or ion sputtering gold or platinum；
Described backing material is TPO flexible polymeric film, to the direct device with aluminum foil metal thin film as electrode, nothing
Need backing material；
Described infrared transparent polymer encapsulated layer is by Low Density Polyethylene and other simple polyenes with low ir-absorbance
Hydrocarbon forms, and the thickness of infrared transparent polymer encapsulated layer is at 15～25 microns.
The flexible stealthy device of adjustable infrared emittance the most according to claim 1, the assemble method of described device,
Specifically include following steps:
(1) deposit metal electrodes and reflecting layer in porous membrane support: use heat evaporation or ion to spatter at porous film surface
Shooting method forms thickness at the metal level of 50 to 200 nanometer thickness as metal electrode, the material of described metal level be golden,
Silver or aluminum, this electrode is simultaneously as the infrared reflecting layer of device；
(2) preparation of activity photochromic layer: prepare thickness on the metal electrode that step 1 obtains micro-to 2 in 500 nanometers
The active photochromic layer of rice, activity photochromic layer uses coating conductive polymer solution and electrochemical polymerization method to make on electrode
Standby；
(3) preparation of the separate layer of polyelectrolyte it is adsorbed with: by lithium perchlorate that mass percent is 1%～10%, quality
Allyl carbonate and the quality hundred that polymethyl methacrylate that percentage ratio is 10%～30%, mass percent are 5%～20%
After proportion by subtraction is the acetonitrile mix homogeneously of 40%～84%, perforated membrane is immersed formation in polyelectrolyte solution and is adsorbed with polyelectrolyte
Separate layer；
(4) metal electrode of backing material and the preparation of ion storage layer are relied on: be deposited with by heat and ion sputtering process
Forming the metal level of high connductivity on flexible material as electrode, described flexible material is polyethylene, polypropylene or polyester,
To the device with aluminium foil as metal electrode, it is not necessary to backing material；Finally on metal electrode, prepare thickness in 500 nanometers extremely
The ion storage layer of 2 microns, ion storage layer by electrode is lifted in conductive polymer solution or dispersion liquid,
Or use coating conductive polymer solution and electrochemical polymerization method to prepare on electrode；
(5) assembling of device and encapsulation: order from bottom to up by infrared transparent polymer encapsulated layer, backing material,
Metal electrode, ion storage layer, be adsorbed with the separate layer of polyelectrolyte, porous membrane support, metal electrode and reflecting layer,
Activity photochromic layer and infrared transparent polymer encapsulated layer are laminated together, will be supported in being adsorbed with the separate layer of polyelectrolyte
Metal electrode in porous membrane support and activity photochromic layer and the metal electrode being supported on substrate and ion storage layer upper
Lower two are partially bonded together, and use infrared transparent polymer encapsulated layer by whole after two metal electrodes are drawn wire respectively
Device cladding is got up and seals.
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| US9547213B2 (en) | 2014-12-19 | 2017-01-17 | Industrial Technology Research Institute | Display device |
| US9547202B2 (en) | 2014-12-19 | 2017-01-17 | Industrial Technology Research Institute | Transparent display panel |
| CN104726034B (en) * | 2015-03-19 | 2017-03-29 | 哈尔滨工业大学 | A kind of visible infrared multi-Functional Camouflage device and preparation method thereof |
| CN105549294A (en) * | 2016-01-29 | 2016-05-04 | 安凯 | Spacecraft electrochromism system and laser invisibility method |
| CN109594112B (en) * | 2018-12-17 | 2021-04-09 | 哈尔滨工业大学 | Preparation method of double-sided polyaniline electrochromic film with high color change response speed |
| CN110058428B (en) * | 2019-03-22 | 2022-12-27 | 中国空间技术研究院 | Double-sided active infrared emissivity adjusting film and preparation method and application thereof |
| CN111025812B (en) * | 2020-01-07 | 2022-10-11 | 中国人民解放军国防科技大学 | Metal electrodeposition-based variable emissivity device and preparation method thereof |
| CN113156729B (en) * | 2020-01-07 | 2022-07-08 | 苏州苏大维格科技集团股份有限公司 | Flexible electrochromic device and manufacturing method thereof |
| CN111158201B (en) * | 2020-01-07 | 2022-10-18 | 中国人民解放军国防科技大学 | Color-variable electro-variable emissivity device and preparation method thereof |
| CN111176047B (en) * | 2020-01-07 | 2023-06-23 | 中国人民解放军国防科技大学 | Flexible electrorheological emissivity device and preparation method thereof |
| CN114592225B (en) * | 2022-04-06 | 2023-09-12 | 哈尔滨工业大学 | Method for improving infrared emissivity regulation and control capability of polyaniline film by doping rare earth ions |
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| FR2879764B1 (en) * | 2004-12-21 | 2007-03-23 | Eads Ccr Groupement D Interet | ELECTROCHEMICAL CELL FLEXIBLE, AQUEOUS, WITH CONTROLLED EMISSION |
| WO2011112882A1 (en) * | 2010-03-12 | 2011-09-15 | Battelle Memorial Institute | Electrochromic device capable of controlling visible and infrared radiations |
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