CN103710760A - Crystal high-temperature annealing device - Google Patents
Crystal high-temperature annealing device Download PDFInfo
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- CN103710760A CN103710760A CN201310737130.9A CN201310737130A CN103710760A CN 103710760 A CN103710760 A CN 103710760A CN 201310737130 A CN201310737130 A CN 201310737130A CN 103710760 A CN103710760 A CN 103710760A
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Abstract
The invention discloses a crystal high-temperature annealing device, comprising a feeding zone, a temperature field heating zone, a cooling zone, a discharging zone, and an isolating device, wherein the isolating device is arranged on the feeding zone; the temperature field heating zone is connected with the cooling zone; the feeding zone is connected with one end of the temperature field heating zone; the discharging zone is connected with one end of the cooling zone; the temperature field heating zone also comprises a low-temperature zone, a medium-temperature zone, a high-temperature zone and a medium-temperature transition zone, which are sequentially connected; the feeding zone, the low-temperature zone, the medium-temperature zone, the high-temperature zone, the medium-temperature transition zone, the cooling zone and the discharging zone are provided with hubs and drive tracks which are connected with the hubs. By adopting the crystal high-temperature annealing device, the unremittance of the crystal annealing process can be achieved, and the annealing cycle is short and is not limited by the crystal shape; the temperature of each temperature zone is consistent, a lot of the heating and cooling time is shortened, the production efficiency is improved, meanwhile, a crystal stress crack is avoided, and the product quality and the yield are improved.
Description
Technical field
The invention belongs to artificial lens production technical field, specifically relate to a kind of crystal high-temperature annealing device.
Background technology
As everyone knows, crystal production environment is all to carry out at high temperature, in crystal production and the subsequent production course of processing, very easily produces stress, therefore need to anneal to discharge stress to crystalline material.In conventional crystal annealing process, annealing temperature is controlled fuzzy, same heating unit is realized the heat temperature raising work of differing temps, and it is uncontrolled that temperature reduces process, very easily cause because descent of temperature excessive velocities causes crystal stress cracking, and low temperature lowered the temperature slow, increase annealing time, generally need about 6～7 days, increased the crystalline material processing and manufacturing cycle, and then increased production cost.In order to realize high temperature crystal short annealing, reduce production costs, existing annealing device space is less simultaneously, and induction heating temperature is inhomogeneous, crystal annealing poor effect.In order to address the above problem, various high temperature crystal annealing devices have been there are at present, the Chinese patent that is 200410016379.1 as application number discloses a kind of resistant to elevated temperatures crystal annealing device, it comprises on the chassis being placed in vaccum exhaust outlet, and contact with chassis sealing-ring and be provided with entery and delivery port and barometric bell jar by vaccum seal ring, in middle cover body, be provided with the heat protection screen shielding apparatus that comprises side shielding cylinder and upper and lower heat shield, bell body is provided with inflation valve and air outlet valve; The heating element that is placed in innermost layer sidewall adopts tungsten filament rod to make, heating element is anchored on molybdenum electrode plate by electrode contact, and molybdenum electrode plate is supported by diamond spar dead ring back up pad, and two ends are anchored on water cooled electrode bar, in the space that molybdenum electrode plate top heating element surrounds, be provided with annealing chamber.Adopt this technical scheme, although can make annealed crystal watch-keeping cubicle temperature up to more than 2000 ℃, all even temperature field is stable to guarantee temperature.But adopt this technical scheme to be difficult to large size, Multiple Shape, many specification products to carry out disposable annealing, increased the crystalline material annealing frequency, caused the significant wastage of annealing device.And this device annealing process is discontinuous, need to repeat heating-cooling, has reduced production efficiency, and then has increased production cost.
Summary of the invention
In order to overcome the discontinuous existing deficiency of crystal high-temperature annealing device annealing process in prior art, a kind of crystal high-temperature annealing device is provided, by this crystal annealing device, can realize the crystalline material short annealing of on-line continuous.
The present invention is achieved by following technical solution.
A kind of crystal high-temperature annealing device, comprise material loading region, a temperature heating region, cooled region, blanking region and be placed in the barrier means on material loading region, a described temperature heating region is connected with cooled region, described material loading region is connected with a temperature heating region one end, blanking region is connected with cooled region one end, a described temperature heating region also comprises connected successively low-temperature region, middle temperature area, high-temperature area and middle temperature transitional region, described material loading region, low-temperature region, middle temperature area, high-temperature area, middle temperature transitional region, cooled region and blanking region are provided with wheel hub and the driven pedrail that is connected wheel hub.
The stepping rate of described transmission crawler belt is adjusted by wheel hub.
Described material loading region and blanking region are room temperature condition, and low-temperature region is room temperature to 500 ℃, and middle temperature area is 400 ℃～1600 ℃, and high-temperature area is 800 ℃～2700 ℃, and middle temperature transitional region is 400 ℃～1600 ℃, and cooled region is room temperature～500 ℃.
Temperature rate of change in described low-temperature region, middle temperature area, high-temperature area is 10 ℃.
The invention has the beneficial effects as follows:
Compared with prior art, adopt continuous crystal high-temperature annealing device of the present invention, in realizing the high-temperature annealing process of crystalline material, tool has the following advantages:
(1) adopt continuous crystal high-temperature annealing device of the present invention, saved the repetition heating-cooling time, and low-temperature region takes fast cooling mode, shortened annealing time, thereby greatly shortened the annealing cycle;
(2) adopt continuous crystal high-temperature annealing device of the present invention, realized the constant control of warm, make territory, basic, normal, high temperature place take rangeability as 10 ℃ of constant control temperature, single heating device is controlled its corresponding temperature of controlling, having improved traditional annealing device needs same heating unit differing temps to change type of heating, reduced heating unit load, realized temperature and accurately controlled.
(3) adopt continuous crystal high-temperature annealing device of the present invention, increased annealing capacity, can make large size, Multiple Shape, many specification products complete online simultaneously, be not subject to space constraints, increased the quantity of once annealing, reduced greatly the annealing frequency, enhanced productivity, reduced production costs.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
In figure: 1-material loading region, a 2-temperature heating region, 3-cooled region, 4-blanking region, 5-wheel hub, 6-driven pedrail, 7-barrier means, 8-crystalline material, 21-low-temperature region, temperature area in 22-, 23-high-temperature area, warm transitional region in 24-.
Embodiment
Below in conjunction with accompanying drawing, further describe technical scheme of the present invention, but described in claimed scope is not limited to.
As shown in Figure 1, a kind of crystal high-temperature annealing device of the present invention, comprise material loading region 1, a temperature heating region 2, cooled region 3, blanking region 4 and be placed in the barrier means 7 on material loading region 1, a described temperature heating region 2 is connected with cooled region 2, described material loading region 1 is connected with temperature heating region 2 one end, blanking region 4 is connected with cooled region 3 one end, a described temperature heating region 2 also comprises connected successively low-temperature region 21, middle temperature area 22, high-temperature area 23 and middle temperature transitional region 24, described material loading region 1, low-temperature region 21, middle temperature area 22, high-temperature area 23, middle temperature transitional region 24, cooled region 3 and blanking region 4 are provided with wheel hub 5 and the driven pedrail 6 that is connected wheel hub 5.Adopt the technical program, in use, only need and be placed in material loading region 1 is positioned over barrier means 7 by crystalline material 8 and transmit on crawler belt 6, under the drive of wheel hub 5, pass through successively warm transitional region 24 and blanking region 4 in material loading region 1, low-temperature region 21, middle temperature area 22, high-temperature area 23, both can realize the high-temperature annealing process of crystalline material 8; The present invention has strengthened operability by the regional temperature stack of basic, normal, high temperature, and the temperature in every region and transfer rate can control respectively by wheel hub 5 and driven pedrail 6, makes every regional annealing temperature and annealing time independence controlled.Thereby the continuity that has realized crystal annealing technique, the annealing cycle is short, and not restricted by crystal shape, each temperature province homo(io)thermism, has reduced a large amount of heating-cooling time, and more traditional method for annealing can save for approximately 50% time, greatly enhance productivity, reduce production costs.In the technical program, the crystalline material 8 using is the crystalline material of different process growth.
The stepping rate of described transmission crawler belt 6 can be adjusted by wheel hub 5, to realize crystalline material 8 in the residence time of high-temperature area 23, thereby realizes good heat insulation effect.
Described material loading region 1 and blanking region 4 are room temperature condition, low-temperature region 21 is room temperature to 500 ℃, and middle temperature area 22 is 400 ℃～1600 ℃, and high-temperature area 23 is 800 ℃～2700 ℃, middle temperature transitional region 24 is 400 ℃～1600 ℃, and cooled region 3 is room temperature～500 ℃.In actual applications, cooled region 3 is heating region not, and need to pass into rare gas element to realize the fast cooling of crystalline material 8 in low-temperature range.Cooling by pouring rare gas element, saved a large amount of low temperature temperature fall times, improved production efficiency, avoided crystal stress cracking simultaneously, improved quality product and yield rate.
Temperature rate of change in described low-temperature region 21, middle temperature area 22, high-temperature area 23 is 10 ℃, to realize annealing process mitigation, carries out.
Described barrier means 7 obtains for the crystalline material consistent with annealed crystal 8 preparation, and purity requirement is more than 99.99%, and can reuse.
Top temperature in described high-temperature area 23 is made and is changed with processing requirement, to realize the different properties of the rear crystalline material of annealing.
Below in conjunction with embodiment accompanying drawing, further describe application of the present invention.
As shown in Figure 1, work engineering of the present invention is: in use, start the wheel hub 5 of each temperature province, and suitably adjust the speed of wheel hub 5, opening each temperature province heating unit makes it reach the temperature of having set and control homo(io)thermism, interval is equidistantly positioned in barrier means 7 by crystalline material 8 and is placed on transmission crawler belt 6 successively again, under the drive of wheel hub 5 by the slow stepping in material loading region 1, need the crystalline material 8 of annealing to make it enter low-temperature region 21 by wheel hub 5 speed of controlling in low-temperature region, and the speed of controlling wheel hub 5 in low-temperature region 21 to make it be slowly the low-temperature region 21 of 10 ℃ by rangeability, enter successively the middle temperature area 22 that has set temperature, when entering high-temperature area 23 top temperature having set, stop the wheel hub 5 in each region, crystalline material 8 is incubated in top temperature, obtain after soaking time, open each region wheel hub 5, and equidistantly place crystalline material 8 in material loading region 1 successively interval, when the crystalline material 8 that had entered top temperature is by middle temperature transitional region 24, behind cooled region 3 and blanking region 4, regain crystalline material 8 and the barrier means 7 of having annealed, complete annealing process.Repeat successively aforesaid operations, obtain continual online crystal high-temperature annealing.
Claims (4)
1. a crystal high-temperature annealing device, comprise material loading region (1), a temperature heating region (2), cooled region (3), blanking region (4) and be placed in the barrier means (7) on material loading region (1), it is characterized in that: a described temperature heating region (2) is connected with cooled region (2), described material loading region (1) is connected with temperature heating region (2) one end, blanking region (4) is connected with cooled region (3) one end, a described temperature heating region (2) also comprises connected successively low-temperature region (21), middle temperature area (22), high-temperature area (23) and middle temperature transitional region (24), described material loading region (1), low-temperature region (21), middle temperature area (22), high-temperature area (23), middle temperature transitional region (24), cooled region (3) and blanking region (4) are provided with wheel hub (5) and the driven pedrail (6) that is connected wheel hub (5).
2. a kind of crystal high-temperature annealing device according to claim 1, is characterized in that: the stepping rate of described transmission crawler belt (6) is adjusted by wheel hub (5).
3. a kind of crystal high-temperature annealing device according to claim 1, it is characterized in that: described material loading region (1) and blanking region (4) are room temperature condition, low-temperature region (21) is room temperature to 500 ℃, middle temperature area (22) is 400 ℃～1600 ℃, high-temperature area (23) is 800 ℃～2700 ℃, middle temperature transitional region (24) is 400 ℃～1600 ℃, and cooled region (3) is room temperature～500 ℃.
4. a kind of crystal high-temperature annealing device according to claim 1, is characterized in that: the temperature rate of change in described low-temperature region (21), middle temperature area (22), high-temperature area (23) is 10 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310737130.9A CN103710760A (en) | 2013-12-27 | 2013-12-27 | Crystal high-temperature annealing device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310737130.9A CN103710760A (en) | 2013-12-27 | 2013-12-27 | Crystal high-temperature annealing device |
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| CN103710760A true CN103710760A (en) | 2014-04-09 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4023989A (en) * | 1975-10-20 | 1977-05-17 | Monsanto Company | Method for producing corded steel wire |
| JPH08127819A (en) * | 1994-10-31 | 1996-05-21 | Sumitomo Metal Ind Ltd | Method and device for flattened annealing for grain oriented silicon steel sheet |
| CN202017038U (en) * | 2011-04-02 | 2011-10-26 | 金川集团有限公司 | Copper and copper alloy continuous roller hearth type annealing furnace |
| CN202039099U (en) * | 2011-04-14 | 2011-11-16 | 武汉钢铁(集团)公司 | Strip breakage protective device of silicon steel continuous annealing machine set |
| CN203923463U (en) * | 2013-12-27 | 2014-11-05 | 贵州蓝科睿思技术研发中心 | A kind of crystal high-temperature annealing device continuously |
-
2013
- 2013-12-27 CN CN201310737130.9A patent/CN103710760A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4023989A (en) * | 1975-10-20 | 1977-05-17 | Monsanto Company | Method for producing corded steel wire |
| JPH08127819A (en) * | 1994-10-31 | 1996-05-21 | Sumitomo Metal Ind Ltd | Method and device for flattened annealing for grain oriented silicon steel sheet |
| CN202017038U (en) * | 2011-04-02 | 2011-10-26 | 金川集团有限公司 | Copper and copper alloy continuous roller hearth type annealing furnace |
| CN202039099U (en) * | 2011-04-14 | 2011-11-16 | 武汉钢铁(集团)公司 | Strip breakage protective device of silicon steel continuous annealing machine set |
| CN203923463U (en) * | 2013-12-27 | 2014-11-05 | 贵州蓝科睿思技术研发中心 | A kind of crystal high-temperature annealing device continuously |
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Application publication date: 20140409 |