CN103708412A - Micro electro mechanical system packaging method - Google Patents
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- CN103708412A CN103708412A CN201310533362.2A CN201310533362A CN103708412A CN 103708412 A CN103708412 A CN 103708412A CN 201310533362 A CN201310533362 A CN 201310533362A CN 103708412 A CN103708412 A CN 103708412A
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 10
- 239000007769 metal material Substances 0.000 claims abstract description 13
- 238000013461 design Methods 0.000 claims abstract description 11
- 239000000654 additive Substances 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000002474 experimental method Methods 0.000 claims description 7
- 230000000996 additive effect Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 5
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000005457 optimization Methods 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 238000000611 regression analysis Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 6
- 239000005518 polymer electrolyte Substances 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 229910001914 chlorine tetroxide Inorganic materials 0.000 abstract 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 15
- 239000007784 solid electrolyte Substances 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 10
- 238000007789 sealing Methods 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- 238000000018 DNA microarray Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- SIXOAUAWLZKQKX-UHFFFAOYSA-N carbonic acid;prop-1-ene Chemical compound CC=C.OC(O)=O SIXOAUAWLZKQKX-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011245 gel electrolyte Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The invention discloses a micro electro mechanical system packaging method, and belongs to the technical field of integrated circuit packaging. The packaging method is as follows: electrostatically bonding P (EO) n - LiX with a metal material, and in the P (EO) n - LiX, n = 4-60, X = SCN, N(CF3SO2) 2, ClO4 and CF3SO3. Through the design of components and adjustment of additives, the ion-conductive solid polymer electrolyte material P (EO) n - LiX for bonding with the metal material is prepared.
Description
Technical field
The present invention relates to integrated antenna package technical field, particularly a kind of micro electro-mechanical system packaging method.
Background technology
The second half in 20th century, development along with large scale integrated circuit technology and micro-fabrication technology, the microelectromechanicpositioning integral system of manufacturing millimicron size becomes possibility, many micromachines combine in mechanism and driver thereof, sensor, controller, power supply on very little wafer, thereby formed complete MEMS (MicroE1ectro Mechanical System, MEMS).At present, MEMS has become one of great scientific and technical research field of attracting attention in the world, its achievement in research is widely used in the fields such as Aero-Space, automobile, information communication, biotechnology, medical treatment, analyzing and diagnosing, emerge many various micro element systems based on manufacturing MEMS technology, as pressure sensor, flow sensor, strain transducer, inertia motion sensor, micro-actuator, RF switch and biochip etc.
Encapsulation technology is one of important step of complicated MEMS manufacture, directly affects service life and the range of application of MEMS.Encapsulation technology mainly contains electrostatic bonding, melting bonding and splicing etc. at present.With respect to electrostatic bonding, melting bonding and adhesive bonding technique exist efficiency low, pollute wafer and the shortcoming such as the life-span is short, thereby limited their range of application.And electrostatic bonding has advantages such as connecting temperature is low, speed is fast, technique is simple, bond strength is high, good airproof performance, can in the situation that not using any binding agent, to functional materials such as metal, silicon chip, pottery (glass), marmems, carry out bonding.It connects essence is the electrochemical reaction process of solid interface, under uniform temperature and electric field action, by dissociation and the migration of alkali metal ion in solid electrolyte glass, at linkage interface, produce high electric field and strong electrostatic attraction, thereby form close contact and electrochemical reaction connection.Polymer solid electrolyte (Soli d Polymer Electro1ytes, SPE) is a kind of novel solid electrolyte developing rapidly in recent years.Polymer solid electrolyte (Soli d Polymer Electrolytes, SPE) is a kind of novel solid electrolyte developing rapidly in recent years.The research that the electrostatic bonding encapsulation technology of SPE and metal species material is used for to the aspects such as microelectronic component, energy device and new light sources device has important scientific meaning and using value, and the research has caused the more scholar's of developed country concern.
In prior art, the method for attachment that all relates to macromolecular material and metal with the MEMS device that ionic conduction SPE assembles is often polymerization, vacuum vapour deposition, liquid pouring method and bonding method etc.
In realizing process of the present invention, inventor finds that prior art at least exists following problem:
With the MEMS device of ionic conduction SPE assembling, all relating to macromolecular material causes with the method for attachment of metal: polymer solid electrolyte interface be combined loosen, surface quality is coarse, electrical conductivity is on the low side, affects device use function; Shorten device lifetime, increase device weight, reduce device mechanical efficiency.
Summary of the invention
In order to solve the problem of prior art, the embodiment of the present invention provides a kind of micro electro-mechanical system packaging.Described technical scheme is as follows:
A micro electro-mechanical system packaging method, is characterized in that, described method comprises:
P (EO) n-LiX and metal material are carried out to electrostatic bonding.
Alternatively, n=4-60 of described P (EO) n-LiX, X=SCN, N (CF
3sO
2)
2, ClO
4, CF
3sO
3.
Alternatively, described method also comprises:
Adopt high-voltage pulse electric source device to carry out electrostatic bonding to described P (EO) n-LiX and metal material.
Alternatively, the exportable direct current of described high-voltage pulse electric source device and pulse square wave two states.
Alternatively, described electrostatic bonding adopts orthogonal experiment and regression analysis, in conjunction with first principle simulative optimization design result, determines technological parameter, and described technological parameter comprises temperature, electric-field intensity, electric current, pressure, reaction time, additive percentage.
Alternatively, in described electrostatic bonding process, apply finite element software, the regularity of distribution of analysis temperature field and stress-strain field.
Alternatively, in described electrostatic bonding process, by setting up ionic conductive polymer and metal electrostatic bonding model, design encapsulating structure.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By the design of component and the adjustment of additive, prepare ionic conduction polymer solid electrolyte material P (EO) n-LiX being applicable to metal material bonding.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that is related to of the Wire bonding strength that provides of the embodiment of the present invention and clean air pressure;
Fig. 2 is the schematic diagram that is related to of the temperature of node in the Parallel Seam Sealing Technology process chips that provides of the embodiment of the present invention and weld interval.
The specific embodiment
For making the object, technical solutions and advantages of the present invention clearer, below embodiment of the present invention is described further in detail.
Embodiment mono-
The process of P (EO) n-LiX and metal material being carried out to electrostatic bonding, details are as follows:
Migration mechanism by research Li ion in ionic conduction polymer solid electrolyte, design is suitable for encapsulating with metal material the composition of ionic conduction polymer solid electrolyte P (EO) n-LiX of bonding, X=SCN wherein, N (CF
3sO
2)
2, C1O
4, CF
3sO
3deng, n=4-60, adopt to adjust kind and the content of additive, the parameters such as research temperature affect mechanism and rule to ionic mobility and electrical conductivity, prepare electrical property good be suitable for the ionic conduction polymer solid electrolyte with the Li series of metal material bonding.
Alternatively, a kind of high efficiency high-voltage pulse electric source device of electrostatic bonding design for ionic conduction polymer solid electrolyte and metal, this designs exportable direct current and pulse square wave two states, extend effective duration of peak point current in bonding process, thereby improve average current and the bonding speed of bonding process.
Embodiment bis-
At P (EO) n-LiX and metal material, carry out, in the process of electrostatic bonding, mainly adopting orthogonal experiment, choose optimal processing parameter, the specific embodiment, details are as follows:
1. scheme arrangement
(1) formulation factor and position level table, investigate temperature, voltage, and surface roughness, cooling velocity is four factors altogether, and the value of every kind of factor is three.
(2) use L
9(3
4) table determines experimental condition, has 4 files and 9 to walk crosswise, 4 are listed as multipotency investigates 4 kinds of factors, often shows three position levels, existing four factors, each minute three position levels, 4 kinds of factors are put into respectively to 4 and list, then, according to factor position level table, the digital value that changes factor into of position level of each row.At this moment, walk crosswise 9 conditions will testing exactly for 9.
2. result of the test
Every kind of condition is done single test, and each result is pressed the quality score of bonding effect, and the measured scoring of matter is high, and records the scoring of nine times.
3. calculate and analyze
(1) calculate three score sums of every each level of row factor.
(2) calculate extreme difference R, to each row, from I, in II and III, maximum number subtracts minimum number, equals extreme difference R, and four extreme difference notes are next line in table, and extreme difference means that greatly the difference that three position levels cause is large, is important factor; Extreme difference is little is unessential factor.
(3) compare and observe;
Compare four extreme differences, what extreme difference was large is most important factor, and all the other several factors, interact, and by observing, can draw temperature, voltage, surface roughness, the optimum value of cooling velocity.
By above orthogonal experiment, can select the optimal processing parameter of P (EO) n-LiX and metal material electrostatic bonding.
Wherein, technological parameter includes but not limited to choose temperature, electric-field intensity, electric current, pressure, reaction time, additive percentage etc., and target test function is ionic mobility, Surface bond rate and bonding strength.
The embodiment of the present invention utilizes Large Scale Nonlinear finite element analysis software to simulate the residual stress of test specimen, and residual stress and residual deformation are analyzed, and can effectively propose measure and the technique of alleviating the method that proposes to improve bonding.
Embodiment tri-
In the present embodiment, the technical process of MEMS encapsulation comprises cleaning, bonding, paster, Bonding, sealing cap etc.Wherein:
(1) bonding technology is the critical process in MEMS encapsulation.It is that bonding techniques can be widely used in sensor, actuator, three dimensional integrated circuits and photoelectronic manufacture along with a kind of process for sealing of the development appearance of integrated circuit and micromechanics.Its appearance makes micromechanics Design and manufacture more flexible.
(2) MEMS paster technique common are two kinds, and a kind of is adhesive technology, and a kind of is soldering processes.The kind of glue is a lot, and the selection of Heraeus is very important, and the glue of different performance is very large to the performance impact of MEMS.
(3) cleaning procedure and lead key closing process are in microelectronics and MEMS encapsulation, and lead key closing process remains and realizes the important way that chip bonding pad is connected with outer lead.How to improve Wire bonding strength is the problem that people study always.Because MEMS exists movable part, and usually require to contact and make this problem seem more important with extraneous medium.Pollution is a major reason that affects Wire bonding strength, and the present embodiment has been studied the relation of cleaning procedure and Wire bonding strength for this reason.At present, the low-voltage plasma cleaning technique of radio-frequency driven be a kind of effectively, clean method cheaply, it is very large to improving Wire bonding strength effect.The successful Application of plasma cleaning technology relies on the optimization of technological parameter, comprises pressure process, plasma power, time and type of process gas.
By experiment, the present embodiment has been studied these impact of crucial technological parameter on Bonding Tensile strength.The gold wire bonding linear diameter of experiment use is 25pm, by standard bond strength, should be greater than sgf, while cleaning, its average bond strength is not 4.7gf, ultrasonic clear after, its average bond strength is 5.1gf, can just meet technological requirement, when with after plasma cleaning, more than its average bond strength is brought up to 6.6gf, as shown in Figure 1.Obviously gas pressure, when 100120mT or 140-180mT, has good bond strength.According to experiment, draw, use Ar plasma, sample is placed on to ground pole plate, when RF power is 200-600W, when gas pressure is 100-120mT or 140-180mT, the time of cleaning 10-15min can obtain fine cleaning performance.
(4) sealing cap technical study: the airtight MEMS device to performance application, often adopts air-tight packaging technique.Level Hermetic Package shell has metal shell and ceramic package, and these two kinds of shells can carry out sealing cap with parallel seam sealing machine.The operation principle of parallel welder is a kind of electric resistance welding, and it contacts with metal cover board and form closed-loop path with two columniform circular electrodes.The high resistant point in whole loop is in electrode and cover plate contact position, and electric current produces amount of heat in contact position, makes it be molten condition, after solidifying a succession of solder joint.Because welding adopts pulse current, therefore solder joint can be mutually overlapping, just formed airtight filling weld seam.In Parallel Seam Sealing Technology, because the temperature of weld is very high, by radiation and the heat that is transmitted on chip, will the chip temperature in cavity be raise.This temperature rise has how many, and whether can cause damage to chip is the problem that people are concerned about always.For this reason, the present embodiment be take metal shell and by Finite Element Method, has been carried out sunykatuib analysis as example.The cover plate of cavity and body of wall are for cutting down, and base plate is CuW, and suppose that the melting welding temperature of cavity cover plate is 1400 ℃, and environment temperature is 25 ℃, and the emissivity of cover plate is 1.0.Result of calculation as shown in Figure 2, has provided the temperature of a certain node and the relation of weld interval in Parallel Seam Sealing Technology process chips in figure.This shows, near the maximum temperature rise in cavity chip position only has 37 ℃, adds environment temperature, and the temperature of chip is 62 ℃.Therefore, Parallel Seam Sealing Technology is that soldering and sealing process can not impact chip reliably.Because being that room-temperature conductivity is lower, the fatal shortcoming of PEO-salt complex (is generally 10
-6～10
-8scm
-1), and electrical conductivity is only 10
-4scm
-1above just have a using value.The method that improves room-temperature conductivity has two kinds, the first adds a small amount of polar organic solvent in polymeric matrix, as propene carbonate (PC), ethylene carbonate (EC) etc., realize so-called gel electrolyte, but adding of organic solvent not only reduced electrolytical mechanical strength, and increased the reactivity of itself and metal lithium electrode.Two of method is in PEO electrolyte, to add inorganic filler to improve electrolytical electrical conductivity, and the method can also improve the stability of electrolytical mechanical strength and lithium/electrolyte interface simultaneously.
The method that the embodiment of the present invention provides, by the design of component and the adjustment of additive, prepares ionic conduction polymer solid electrolyte material P (EO) n-LiX being applicable to metal material bonding.By optimizing bonding technology parameter, control the transmission of bonding process intermediate ion and the process of interfacial chemical reaction, obtain the interface product with a fixed structure and performance, guarantee bonding quality.
One of ordinary skill in the art will appreciate that all or part of step that realizes above-described embodiment can complete by hardware, also can come the hardware that instruction is relevant to complete by program, described program can be stored in a kind of computer-readable recording medium, the above-mentioned storage medium of mentioning can be read-only storage, disk or CD etc.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. a micro electro-mechanical system packaging method, is characterized in that, described method comprises:
P (EO) n-LiX and metal material are carried out to electrostatic bonding.
2. method according to claim 1, is characterized in that, the n=4-60 of described P (EO) n-LiX, X=SCN, N (CF
3sO
2)
2, C1O
4, CF
3sO
3.
3. method according to claim 1, is characterized in that, described method also comprises:
Adopt high-voltage pulse electric source device to carry out electrostatic bonding to described P (EO) n-LiX and metal material.
4. method according to claim 3, is characterized in that, the exportable direct current of described high-voltage pulse electric source device and pulse square wave two states.
5. method according to claim 1, it is characterized in that, described electrostatic bonding adopts orthogonal experiment and regression analysis, in conjunction with first principle simulative optimization design result, determine technological parameter, described technological parameter comprises temperature, electric-field intensity, electric current, pressure, reaction time, additive percentage.
6. method according to claim 1, is characterized in that, applies finite element software, the regularity of distribution of analysis temperature field and stress-strain field in described electrostatic bonding process.
7. method according to claim 1, is characterized in that, in described electrostatic bonding process, by setting up ionic conductive polymer and metal electrostatic bonding model, designs encapsulating structure.
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| CN201310533362.2A CN103708412B (en) | 2013-10-29 | 2013-10-29 | A kind of micro electro-mechanical system packaging method |
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| CN103708412B CN103708412B (en) | 2016-01-20 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1135267A (en) * | 1994-09-06 | 1996-11-06 | 第一工业制药株式会社 | Solid polyelectrolyte |
| CN1471353A (en) * | 2002-06-26 | 2004-01-28 | Nec������ʽ���� | Printed circuit board its manufacturing method and semiconductor device |
| CN1764861A (en) * | 2003-03-27 | 2006-04-26 | 伊英克公司 | Electro-optic assemblies |
| CN102768903A (en) * | 2012-08-09 | 2012-11-07 | 中国振华（集团）新云电子元器件有限责任公司 | Method for manufacturing high-voltageconducting polymer electrolytic capacitor |
-
2013
- 2013-10-29 CN CN201310533362.2A patent/CN103708412B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1135267A (en) * | 1994-09-06 | 1996-11-06 | 第一工业制药株式会社 | Solid polyelectrolyte |
| CN1471353A (en) * | 2002-06-26 | 2004-01-28 | Nec������ʽ���� | Printed circuit board its manufacturing method and semiconductor device |
| CN1764861A (en) * | 2003-03-27 | 2006-04-26 | 伊英克公司 | Electro-optic assemblies |
| CN102768903A (en) * | 2012-08-09 | 2012-11-07 | 中国振华（集团）新云电子元器件有限责任公司 | Method for manufacturing high-voltageconducting polymer electrolytic capacitor |
Non-Patent Citations (3)
| Title |
|---|
| P. FERLONI, ET AL: "EFFECTS OF GAMMA-RADIATION ON THE POLYMER ELECTROLYTE P(EO)8•LiC104", 《INTERNATIONAL JOURNAL OF RADIATION APPLICATIONS AND INSTRUMENTATION. PART C. RADIATION PHYSICS AND CHEMISTRY》 * |
| P. FERLONI, ET AL: "EFFECTS OF GAMMA-RADIATION ON THE POLYMER ELECTROLYTE P(EO)8•LiC104", 《INTERNATIONAL JOURNAL OF RADIATION APPLICATIONS AND INSTRUMENTATION. PART C. RADIATION PHYSICS AND CHEMISTRY》, vol. 40, no. 5, 30 November 1992 (1992-11-30), pages 365 - 367, XP024515299, DOI: doi:10.1016/1359-0197(92)90196-M * |
| 梁晋昌等: "金属与陶瓷阳极连接高压脉冲电源的设计", 《机械管理开发》 * |
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