CN103698921A - 显示装置及其制作方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 61
- 230000000903 blocking effect Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- 239000011159 matrix material Substances 0.000 claims description 9
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 239000000463 material Substances 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种显示装置及其制作方法,所述显示装置包括阵列基板和与该阵列基板相对设置的彩色滤光片基板,所述阵列基板表面具有衬垫层和导通层,所述衬垫层垫高所述导通层至该导通层与所述彩色滤光片基板接触,以使所述导通层导通所述阵列基板和彩色滤光片基板。相对于现有技术中连接器和导电胶组合的导通结构,本发明的导通结构节省了物料成本、降低了加工难度、提高了良品率,最终极大的降低了生成成本。同时还可适用于显示装置窄边框的设计,满足用户的审美需求。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种显示装置以及该显示装置的制作方法。
背景技术
现有的显示装置如图1所示,包括相对设置的阵列(Array)基板10和彩色滤光片(CF)基板20,二者之间填充有金珠40,阵列基板10上具有连接器(connector)30,周边设有导电胶(图未示)。阵列基板10和彩色滤光片基板20通过连接器30和导电胶的组合实现二者的公共(common)电极的导通。这种导通结构的设计需要较高的点胶精度,因此良品率较低,生成成本较高;且连接器30的尺寸较大,不适合显示装置窄边框的设计,无法满足用户的审美需求。
发明内容
本发明的主要目的在于提供一种显示装置及其制造方法,旨在改良导通结构,降低生成成本。
为达以上目的,本发明提出一种显示装置,包括阵列基板和与该阵列基板相对设置的彩色滤光片基板,所述阵列基板表面具有衬垫层和导通层,所述衬垫层垫高所述导通层至该导通层与所述彩色滤光片基板接触,以使所述导通层导通所述阵列基板和彩色滤光片基板。
优选地,所述导通层为金属层或氧化铟锡层。
优选地,所述导通层为氧化铟锡层,所述阵列基板表面还具有与所述阵列基板的公共电极连接的金属层,所述氧化铟锡层通过连接所述金属层来间接连接所述公共电极。
优选地,所述导通层为第二金属层,所述阵列基板表面还具有与所述阵列基板的公共电极连接的第一金属层和与该第一金属层连接的氧化铟锡层,所述第二金属层通过连接所述氧化铟锡层来间接连接所述公共电极。
优选地,所述彩色滤光片基板表面具有与该彩色滤光片基板的公共电极连接的氧化铟锡层,所述导通层通过与所述彩色滤光片基板的氧化铟锡层接触来间接连接所述彩色滤光片基板的公共电极。
优选地,所述导通层直接连接所述阵列基板的公共电极或/和彩色滤光片基板的公共电极。
优选地,所述衬垫层为色阻层、黑矩阵层或柱形隔垫物层。
优选地,所述衬垫层为色阻层,所述色阻层至少为两层。
本发明同时提出一种显示装置的制作方法,包括步骤:
在阵列基板上形成衬垫层;
在阵列基板上形成导通层,所述导通层部分覆盖于所述衬垫层表面;
将彩色滤光片基板与覆盖于所述衬垫层表面的部分导通层抵接,以使所述导通层导通所述阵列基板和彩色滤光片基板。
本发明所提供的一种显示装置,充分利用阵列基板制程中的金属层或氧化铟锡层作为导通层,并利用衬垫层垫高导通层至与彩色滤光片基板接触,使得导通层将阵列基板和彩色滤光片基板的公共电极导通。相对于现有技术中连接器和导电胶组合形成的导通结构,本发明的导通结构节省了物料成本、降低了加工难度、提高了良品率,最终极大的降低了生成成本。同时还可适用于显示装置窄边框的设计,满足用户的审美需求。
附图说明
图1是现有技术的显示装置的导通结构示意图;
图2是本发明的显示装置第一实施例的结构示意图;
图3是本发明的显示装置第一实施例的结构示意图;
图4是本发明的显示装置的制作方法一实施例的流程图。
本发明目的的实现、功能特点及优点将结合实施例,参照附图做进一步说明。
具体实施方式
应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
本发明的显示装置,以色阻层和导通层的组合来取代连接器和导电胶组合,实现阵列基板和彩色滤光片基板的导通。其中,导通层可以是阵列基板制程中的金属层或氧化铟锡层(ITO),衬垫层可以是色阻(Color Filter,CF)层、黑矩阵(Black Matrix,BM)层、柱形隔垫物(Photo Spacer,PS,也叫做支撑柱)层等光阻材料。
参见图2,提出本发明的显示装置第一实施例,本实施例以氧化铟锡层作为导通层。所述显示装置包括阵列基板100和与该阵列基板100相对设置的彩色滤光片基板200,彩色滤光片基板200表面具有一氧化铟锡层12,该氧化铟锡层I2与彩色滤光片基板200的公共电极连接;阵列基板100表面从下到上依次形成有第一金属层M1、第二金属层M2、色阻层110和氧化铟锡层I1,各层之间还具有保护层、钝化层等。氧化铟锡层I1一部分(左侧)覆盖于衬垫层110表面,使得衬垫110层垫高氧化铟锡层I1至该氧化铟锡层I1与彩色滤光片基板200的氧化铟锡层I2接触;另一部分(右侧)分别与第一金属层M1和第二金属层连M2接。氧化铟锡层I1可以直接连接阵列基板100的公共电极;或者第一金属层M1与阵列基板100的公共电极连接,氧化铟锡层I1通过连接第一金属层M1间接连接阵列基板100的公共电极;或者第二金属层M2与阵列基板100的公共电极连接,氧化铟锡层I1通过连接第二金属层M2间接连接阵列基板100的公共电极。从而,氧化铟锡层I1作为导通层,一端与彩色滤光片基板200的氧化铟锡层I2接触而间接连接彩色滤光片基板200的公共电极,另一端直接或间接的与阵列基板100的公共电极连接,实现了将阵列基板100和彩色滤光片基板200导通的目的。
衬垫层110可以为色阻层、黑矩阵层、柱形隔垫物层等等光阻材料,因色阻层堆叠更稳定平整,本实施例优选色阻层,根据实际情况,色阻层可以是一层、两层或多层,优选2~3层,各层颜色可以相同或相异,在此不做限制;色阻层的堆叠方式和堆叠形状各异,在此不做限制。
在某些实施例中,作为导通层的氧化铟锡层I1也可以直接与彩色滤光片基板200的公共电极连接。
参见图3,提出本发明的显示装置第二实施例,本实施例以第二金属层作为导通层。所述显示装置包括阵列基板100和与该阵列基板100相对设置的彩色滤光片基板200,彩色滤光片基板200表面具有一氧化铟锡层I2,该氧化铟锡层I2与彩色滤光片基板200的公共电极连接;阵列基板100表面从下到上依次形成有第一金属层M1、色阻层110、第二金属层M2和氧化铟锡层I1,,各层之间还具有保护层、钝化层等。第二金属层M2一部分(左侧)覆盖于衬垫层110表面,使得衬垫层110垫高第二金属层M2至该第二金属层M2与彩色滤光片基板200的氧化铟锡层I2接触;另一部分(右侧)与氧化铟锡层I1连接,氧化铟锡层I1与第一金属层M1连接。第二金属层M2可以直接连接阵列基板100的公共电极;或者氧化铟锡层I1或第一金属层M1与阵列基板100的公共电极连接,第二金属层M2通过连接氧化铟锡层I1间接连接阵列基板100的公共电极。从而,第二金属层M2作为导通层,一端与彩色滤光片基板200的氧化铟锡层I2接触而间接连接彩色滤光片基板200的公共电极,另一端直接或间接的与阵列基板100的公共电极连接,实现了将阵列基板100和彩色滤光片基板200导通的目的。相对于氧化铟锡层I1,第二金属层M2的延展性和韧性更佳,不容易断裂,因此以第二金属层M2作为导通层使得两基板的导通更加稳定。
衬垫层110可以为色阻层、黑矩阵层、柱形隔垫物层等等光阻材料,因色阻层堆叠更稳定平整,本实施例优选色阻层,根据实际情况,色阻层可以是一层、两层或多层,优选2~3层,各层颜色可以相同或相异,在此不做限制;色阻层的堆叠方式和堆叠形状各异,在此不做限制。
在某些实施例中,作为导通层的第二金属层M2也可以直接与彩色滤光片基板200的公共电极连接。
据此,本发明的显示装置,充分利用阵列基板制程中的金属层或氧化铟锡层作为导通层,并利用衬垫层垫高导通层至与彩色滤光片基板接触,使得导通层将阵列基板和彩色滤光片基板的公共电极导通。相对于现有技术中连接器和导电胶组合的导通结构,本发明的导通结构节省了物料成本、降低了加工难度、提高了良品率,最终极大的降低了生成成本。同时还可适用于显示装置窄边框的设计,满足用户的审美需求。
结合参见图2和图4,提出一种上述显示装置的制作方法,包括以下步骤:
步骤S101、在阵列基板上形成金属层,该金属层包括第一金属层和第二金属层
本步骤S101中,以溅射或其它物理气相沉积方式形成金属层,金属层可以为金属、合金或者前述二者组合的多层结构,优选为钼/铝/钼的多层结构。首先在阵列基板100上形成第一金属层M1,并使第一金属层M1图形化,图形化的方法可以是光刻或蚀刻,再在第一金属层M1上形成钝化层(GI),并在钝化层(GI)上设一开口露出部分第一金属层M1;然后在开口一边(右侧)的钝化层(GI)上形成非晶硅层(AS)并图形化,在开口另一边(左侧)的钝化层上形成第二金属层M2并图形化,并在第二金属层M2上形成钝化层(PV1)。
步骤S102、在阵列基板上形成衬垫层
本步骤S102中,在阵列基板100的钝化层(PV1)上形成(或涂布)衬垫层110并图形化,并形成钝化层(PV2),然后进行过孔图形化。衬垫层110可以为色阻层、黑矩阵层、柱形隔垫物层等等光阻材料,因色阻层堆叠更稳定平整,本实施例优选色阻层,根据实际情况,色阻层可以是一层、两层或多层,优选2~3层,各层颜色可以相同或相异,在此不做限制;色阻层的堆叠方式和堆叠形状各异,在此不做限制。
步骤S103、在阵列基板上形成氧化铟锡层作为导通层,且氧化铟锡层部分覆盖于衬垫层表面
本步骤S103中,在阵列基板上形成氧化铟锡层I1并图形化,其中氧化铟锡层I1一部分(左侧)形成于陈列基板100的衬垫层110上,使得衬垫110层垫高氧化铟锡层I1;另一部分往右侧延伸与第二金属层连接,并通过上述开口与第一金属层连接。
氧化铟锡层I1作为导通层,可以直接连接阵列基板100的公共电极;或者第一金属层M1与阵列基板100的公共电极连接,氧化铟锡层I1通过连接第一金属层M1间接连接阵列基板100的公共电极;或者第二金属层M2与阵列基板100的公共电极连接,氧化铟锡层I1通过连接第二金属层M2间接连接阵列基板100的公共电极。
步骤S104、将彩色滤光片基板与覆盖于衬垫层表面的部分氧化铟锡层抵接,使得彩色滤光片基板和阵列基板通过氧化铟锡层导通
彩色滤光片基板200上通常形成有氧化铟锡层I2,且氧化铟锡层I2与彩色滤光片基板200的公共电极连接。将制作好的彩色滤光片基板200与阵列基板100相对设置,并使得彩色滤光片基板200与阵列基板100的氧化铟锡层I1抵接,从而氧化铟锡层I1就与彩色滤光片基板200的氧化铟锡层I2接触。从而,氧化铟锡层I1作为导通层,一端与彩色滤光片基板200的氧化铟锡层I2接触而间接连接彩色滤光片基板200的公共电极,另一端直接或间接的与阵列基板100的公共电极连接,实现了将阵列基板100和彩色滤光片基板200导通的目的。
其中,彩色滤光片基板200的制作流程大致为:在彩色滤光片基板200上形成(或涂布)黑矩阵并进行图形化,然后沉积形成氧化铟锡层I2,最后形成(或涂布)柱形隔垫物层并进行图形化。
在某些实施例中,作为导通层的氧化铟锡层I1也可以直接与彩色滤光片基板200的公共电极连接。
在某些实施例中,也可以如图3所示以阵列基板100的第二金属层M2作为导通层。此时第二金属层M2一部分覆盖于衬垫层110表面并与彩色滤光片基板200接触,并直接与彩色滤光片基板200的公共电极连接,或通过彩色滤光片基板200上的氧化铟锡层I2间接的与彩色滤光片基板200的公共电极连接;另一部分可以直接连接阵列基板100的公共电极;或者氧化铟锡层I1或第一金属层M1与阵列基板100的公共电极连接,第二金属层M2通过连接氧化铟锡层I1间接连接阵列基板100的公共电极。从而,第二金属层M2作为导通层,一端与彩色滤光片基板接触而直接或间接的连接彩色滤光片基板200的公共电极,另一端直接或间接的与阵列基板100的公共电极连接,同样实现了将阵列基板100和彩色滤光片基板200导通的目的。
据此,本发明的显示装置的制作方法,利用阵列基板制程中的金属层或氧化铟锡层作为导通层,并利用衬垫层垫高导通层至与彩色滤光片基板接触,使得导通层将阵列基板和彩色滤光片基板的公共电极导通。相对于现有技术中连接器和导电胶的组合,本发明节省了物料成本、减少了工艺流程、降低了加工难度、提高了良品率,最终极大的降低了生成成本。同时还可适用于显示装置窄边框的设计,满足用户的审美需求。
应当理解的是,以上仅为本发明的优选实施例,不能因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (10)
1.一种显示装置,包括阵列基板和与该阵列基板相对设置的彩色滤光片基板,其特征在于,所述阵列基板表面具有衬垫层和导通层,所述衬垫层垫高所述导通层至该导通层与所述彩色滤光片基板接触,以使所述导通层导通所述阵列基板和彩色滤光片基板。
2.根据权利要求1所述的显示装置,其特征在于,所述导通层为金属层或氧化铟锡层。
3.根据权利要求1所述的显示装置,其特征在于,所述导通层为氧化铟锡层,所述阵列基板表面还具有与所述阵列基板的公共电极连接的金属层,所述氧化铟锡层通过连接所述金属层来间接连接所述公共电极。
4.根据权利要求1所述的显示装置,其特征在于,所述导通层为第二金属层,所述阵列基板表面还具有与所述阵列基板的公共电极连接的第一金属层和与该第一金属层连接的氧化铟锡层,所述第二金属层通过连接所述氧化铟锡层来间接连接所述公共电极。
5.根据权利要求1-4任一项所述的显示装置,其特征在于,所述彩色滤光片基板表面具有与该彩色滤光片基板的公共电极连接的氧化铟锡层,所述导通层通过与所述彩色滤光片基板的氧化铟锡层接触来间接连接所述彩色滤光片基板的公共电极。
6.根据权利要求1或2所述的显示装置,其特征在于,所述导通层直接连接所述阵列基板的公共电极或/和彩色滤光片基板的公共电极。
7.根据权利要求1-4任一项所述的显示装置,其特征在于,所述衬垫层为色阻层、黑矩阵层或柱形隔垫物层。
8.根据权利要求1-4任一项所述的显示装置,其特征在于,所述衬垫层为色阻层,所述色阻层至少为两层。
9.一种显示装置的制作方法,其特征在于,包括步骤:
在阵列基板上形成衬垫层;
在阵列基板上形成导通层,所述导通层部分覆盖于所述衬垫层表面;
将彩色滤光片基板与覆盖于所述衬垫层表面的部分导通层抵接,以使所述导通层导通所述阵列基板和彩色滤光片基板。
10.根据权利要求9所述的显示装置的制作方法,其特征在于,所述衬垫层为色阻层、黑矩阵层或柱形隔垫物层。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015096296A1 (zh) * | 2013-12-23 | 2015-07-02 | 深圳市华星光电技术有限公司 | 显示装置及其制作方法 |
CN105676551A (zh) * | 2016-04-13 | 2016-06-15 | 深圳市华星光电技术有限公司 | 一种液晶显示面板及液晶显示器 |
CN111971731A (zh) * | 2018-03-28 | 2020-11-20 | 夏普株式会社 | 显示设备及显示设备的制造方法 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101114073A (zh) * | 2006-07-25 | 2008-01-30 | 中华映管股份有限公司 | 液晶显示面板 |
US7570323B2 (en) * | 2003-12-26 | 2009-08-04 | Sharp Kabushiki Kaisha | Color filter substrate, liquid crystal display apparatus including color filter substrate, and method of manufacturing color filter substrate |
CN102591072A (zh) * | 2012-02-21 | 2012-07-18 | 深圳市华星光电技术有限公司 | 一种液晶面板、液晶显示器及其制造方法 |
CN102650763A (zh) * | 2011-08-26 | 2012-08-29 | 北京京东方光电科技有限公司 | 一种液晶显示屏及其制造方法与显示器 |
CN102681237A (zh) * | 2012-05-16 | 2012-09-19 | 深圳市华星光电技术有限公司 | 液晶面板、液晶显示装置的制造方法以及液晶玻璃 |
CN103293774A (zh) * | 2012-12-28 | 2013-09-11 | 上海中航光电子有限公司 | Tft阵列基板、tft液晶显示面板及制作方法 |
CN103424906A (zh) * | 2013-08-23 | 2013-12-04 | 南京中电熊猫液晶显示科技有限公司 | 液晶显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3161528B2 (ja) * | 1998-09-07 | 2001-04-25 | 日本電気株式会社 | 液晶表示パネル |
TW594163B (en) * | 2003-03-07 | 2004-06-21 | Toppoly Optoelectronics Corp | Structure of light-shielding frame for liquid crystal display and manufacturing method thereof |
TWI408449B (zh) * | 2009-11-03 | 2013-09-11 | Wintek Corp | 液晶顯示面板 |
US8786818B2 (en) * | 2010-02-24 | 2014-07-22 | Sharp Kabushiki Kaisha | Liquid crystal display panel having particular laminated spacer |
CN103698921A (zh) | 2013-12-23 | 2014-04-02 | 深圳市华星光电技术有限公司 | 显示装置及其制作方法 |
-
2013
- 2013-12-23 CN CN201310719262.9A patent/CN103698921A/zh active Pending
-
2014
- 2014-04-10 US US14/777,166 patent/US9853061B2/en not_active Expired - Fee Related
- 2014-04-10 WO PCT/CN2014/075058 patent/WO2015096296A1/zh active Application Filing
-
2017
- 2017-11-04 US US15/803,743 patent/US10236307B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7570323B2 (en) * | 2003-12-26 | 2009-08-04 | Sharp Kabushiki Kaisha | Color filter substrate, liquid crystal display apparatus including color filter substrate, and method of manufacturing color filter substrate |
CN101114073A (zh) * | 2006-07-25 | 2008-01-30 | 中华映管股份有限公司 | 液晶显示面板 |
CN102650763A (zh) * | 2011-08-26 | 2012-08-29 | 北京京东方光电科技有限公司 | 一种液晶显示屏及其制造方法与显示器 |
CN102591072A (zh) * | 2012-02-21 | 2012-07-18 | 深圳市华星光电技术有限公司 | 一种液晶面板、液晶显示器及其制造方法 |
CN102681237A (zh) * | 2012-05-16 | 2012-09-19 | 深圳市华星光电技术有限公司 | 液晶面板、液晶显示装置的制造方法以及液晶玻璃 |
CN103293774A (zh) * | 2012-12-28 | 2013-09-11 | 上海中航光电子有限公司 | Tft阵列基板、tft液晶显示面板及制作方法 |
CN103424906A (zh) * | 2013-08-23 | 2013-12-04 | 南京中电熊猫液晶显示科技有限公司 | 液晶显示装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015096296A1 (zh) * | 2013-12-23 | 2015-07-02 | 深圳市华星光电技术有限公司 | 显示装置及其制作方法 |
US9853061B2 (en) | 2013-12-23 | 2017-12-26 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Display device and manufacturing method thereof |
CN105676551A (zh) * | 2016-04-13 | 2016-06-15 | 深圳市华星光电技术有限公司 | 一种液晶显示面板及液晶显示器 |
WO2017177537A1 (zh) * | 2016-04-13 | 2017-10-19 | 深圳市华星光电技术有限公司 | 一种液晶显示面板及液晶显示器 |
CN111971731A (zh) * | 2018-03-28 | 2020-11-20 | 夏普株式会社 | 显示设备及显示设备的制造方法 |
CN111971731B (zh) * | 2018-03-28 | 2022-04-12 | 夏普株式会社 | 显示设备及显示设备的制造方法 |
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