CN103698070A - Device for measuring electrostatic adsorption force and desorption time of electrostatic chuck - Google Patents
Device for measuring electrostatic adsorption force and desorption time of electrostatic chuck Download PDFInfo
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- CN103698070A CN103698070A CN201310689053.4A CN201310689053A CN103698070A CN 103698070 A CN103698070 A CN 103698070A CN 201310689053 A CN201310689053 A CN 201310689053A CN 103698070 A CN103698070 A CN 103698070A
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- electrostatic chuck
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Abstract
The invention relates to a device for measuring electrostatic adsorption force and desorption time of an electrostatic chuck, and aims at providing a device capable of being used for accurately measuring the electrostatic adsorption force intensity and the wafer desorption time of the electrostatic chuck. The device comprises a vacuum cavity, the electrostatic chuck (10), a measuring system (14) and a motive power system, wherein the electrostatic chuck is arranged in the vacuum cavity, the measuring system is arranged in the vacuum cavity and is positioned under the electrostatic chuck, the motive power system is arranged on the vacuum cavity, and the motive power system is used for driving the electrostatic chuck to move so that the measuring system and the electrostatic chuck generate relative movement. In the traditional measuring mode, the loss of the effective acting area of plasmas above a wafer is caused, so the electrostatic force measurement in the plasma environment is greater. The device has the advantages that a force sensor is arranged under the wafer, the defects of the traditional measuring mode are overcome, and the device can be widely applied to the test of semiconductor industry electrostatic chuck devices.
Description
Technical field
The present invention relates to the assembly detection apparatus of semicon industry, be specifically related to the measurement mechanism of electrostatic chuck Electrostatic Absorption power and desorption time in a kind of semiconductor equipment.
Background technology
Electrostatic chuck is the core component in integrated circuit (IC) process for making, it utilizes electrostatic absorption principle that chip sucking to be processed is attached to its surface and can by back of the body blowing, controls the temperature of wafer surface, is widely used in the techniques such as etching (Etching), physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD).Electrostatic chuck is compared and is had lot of advantages with vacuum cup with traditional mechanical chuck, it has avoided traditional mechanical chuck in use because the mechanical reasons such as pressure, collision cause the damage of unrepairable to wafer, reduce particle contamination, increased effective working (finishing) area of wafer.Overcome the defect that vacuum cup cannot be applied to environment under low pressure simultaneously.
The desorption time of electrostatic chuck and Electrostatic Absorption power size are one of most important indexs of electrostatic chuck, they directly determine that whether qualified the performance of electrostatic chuck is good and bad and, so accurately desorption time and the electrostatic force size of measurement of electrostatic chuck just seem particularly important.Traditional measurement mechanism adopts the mode of upper crystal pulling sheet to carry out static force measurement, measuring accuracy is lower and cannot measure desorption time, simultaneous measuring apparatus can distribute and exert an influence the plasma of wafer top, so traditional measurement mechanism cannot be for plasma environment.
Summary of the invention
Technical matters to be solved by this invention is: the measurement mechanism that a kind of electrostatic chuck Electrostatic Absorption power and desorption time are provided, desorption time that can Measurement accuracy electrostatic chuck and Electrostatic Absorption power size, this measurement mechanism has overcome the shortcoming that electrostatic chuck measurement mechanism precision of the prior art is low, cannot be applied to plasma environment, the device that provides a kind of mode of drop-down wafer to carry out electrostatic force measurement, simple and reliable for structure, automaticity is high, concrete technical scheme is
The measurement mechanism of electrostatic chuck Electrostatic Absorption power and desorption time, is characterized in that, comprising:
Vacuum chamber;
And power system, described power system is arranged on described vacuum chamber, and described power system is used for driving measurement of electrostatic chuck to move, and makes described measuring system and electrostatic chuck produce relative motion.
Preferred scheme is that described measuring system is fixedly mounted on the bottom in described vacuum chamber; Described power system drives described electrostatic chuck 10 moving up near described measuring system with away from the side of described measuring system.
Further preferably, described power system comprises:
Gearing, described gearing is connected with described electrostatic chuck;
And drive unit, described drive unit connects described gearing, and moves by the electrostatic chuck in actuator drives vacuum chamber.
Preferably, described measurement mechanism also comprises:
Glue chamber support 1, described glue chamber support 1 is suitable for supporting vacuum chamber; Described drive unit is arranged on described glue chamber support 1, and described drive unit is positioned at the below of vacuum chamber;
Described drive unit comprises: motor support base 4, vertical motor 5 and in order to control the control system of described vertical motor 5 precise motions.
Preferably, described chamber bottom is provided with mounting hole;
Described gearing comprises: linear bearing 3, axis of guide fixture 6, the axis of guide 7, electrostatic chuck web member 9, the dynamic seal 19 matching with described mounting hole and the described axis of guide 7; The axis of guide is the motive seal with chamber bottom by the realization of motive seal axle sleeve;
The described axis of guide 7 one end are connected with described drive unit by axis of guide fixture 6, the other end enters in described vacuum chamber by dynamic seal 19, by described linear bearing 3, be connected with described electrostatic chuck web member 9, described electrostatic chuck web member 9 is connected with electrostatic chuck 10 by bolt.
Preferably, described measuring system 14 comprises: sensor base 16, pressure transducer 17 and support member 18, described pressure transducer 17 is arranged in sensor base 16, sensor base 16 is fixed on chamber bottom, pressure transducer 17 tops are connected with described support member 18, and described support member 18 is suitable for supporting wafers.
The PIN hole (centre hole) that described support member 18 carries through electrostatic chuck 10 contacts with wafer, and described support member 18 is thimble or pin.
A specific embodiments of the present invention is, described measurement mechanism comprises three the above measuring systems, and described each measuring system is circumference equal dividing in chamber bottom and distributes.
Further preferably, described vacuum chamber comprises chamber housing 12, view window 2, function reserved opening and vacuum acquisition device;
The measurement data that described measurement mechanism obtains spreads out of by the function reserved opening on vacuum chamber 12.
Described vacuum acquisition device comprises dry pump and molecular pump, and described dry pump and described molecular pump are connected in parallel, and by pipeline, is connected with vacuum chamber 12.
Again preferably, described function reserved opening comprises data transmission mouth 15, plasma input port 13 and aspirating hole 8; Described data transmission mouth 15 is positioned at cavity bottom, and pressure transducer 17 DOL Data Output Line are connected with the data acquisition system (DAS) of chamber outside by data transmission mouth 15, and wherein data transmission mouth 15 seals by static seal; Plasma input port 13 is positioned at vacuum chamber crown center position, for the input of external plasma, by ring flange, is connected with external plasma input channel; Aspirating hole 8 is positioned at cavity bottom, is connected, thereby utilizes vacuum acquisition device to make chamber obtain the vacuum state that meets technological requirement by ring flange with vacuum acquisition device.
Data acquisition system (DAS) of the present invention is the Data Display Meter Specialized of pressure transducer 17, and it reads by amplifying the simulating signal of pressure transducer 17 inputs the numerical value that pressure transducer 17 records in real time.
The mensuration of absorption affinity: measurement mechanism of the present invention is in Electrostatic Absorption force measurement process, and measuring system maintains static in vacuum chamber 12, and the motion of electrostatic chuck 10 is not exerted an influence.Original state, measuring system does not contact with wafer 11, by vertical motor 5, drives the axis of guide 7, thereby drives electrostatic chuck 10 and wafer 11 to move near the direction of pressure transducer 17.At electrostatic chuck 10, move downward in process, due to the supporting role of support member 18, make electrostatic chuck 10 and wafer 11 produce disengaging movement.Electrostatic chuck moves downward in process, the numerical value that pressure transducer 17 is measured increases gradually, to wafer 11 and the electrostatic chuck time of releasing, the reading of pressure transducer reduces suddenly, and the full-scale reading of this interval pressure sensor is the numerical value of the suffered Electrostatic Absorption power of wafer 11.
The mensuration of desorption time: measurement mechanism of the present invention is in the measuring process of wafer 11 desorption times, first control system drives electrostatic chuck 10 and wafer 11 to move to the direction near pressure transducer 17 by regulation and control motor vertical 5, when the reading of pressure transducer 17 is slightly larger than wafer 11 deadweight, control system regulation and control motor vertical 5 is fixing by electrostatic chuck 10.At t1, constantly disconnect electrostatic chuck supply, Electrostatic Absorption power reduces gradually.When Electrostatic Absorption power disappears completely, the reading of pressure transducer can sport wafer 11 deadweights, records this t2 constantly.T2-t1 is the desorption time of wafer 11.
The measurement mechanism of electrostatic chuck Electrostatic Absorption power of the present invention and desorption time can be in all semiconductor technologies, especially applicable to the desorption time of plasma environment Measurement accuracy electrostatic chuck and electrostatic force size, for assessment and the improvement of electrostatic chuck, there is important effect.
The beneficial effect that the measurement mechanism of electrostatic chuck Electrostatic Absorption power of the present invention and desorption time is obtained is:
1, simple in structure, easy and simple to handle, by high-accuracy Electric Machine Control and high-precision pressure transducer, guarantee that measuring accuracy is high;
2, traditional measurement mechanism is positioned at wafer top, can exist and disturb and block the distribution of wafer top plasma, and measurement mechanism of the present invention is positioned at the below of wafer, for the distribution of the plasma of wafer top, without any impact, can be applied to low pressure and plasma environment;
3, there is the measurement of Electrostatic Absorption power and wafer desorption time and measure two functions;
4, the PIN hole that thimble carries through electrostatic chuck body contacts with wafer, electrostatic chuck self function is not caused to any destruction;
5, the measuring system that decile distributes is conducive to the suffered anchorage force of dispersed wafer, avoided single measuring system due to anchorage force excessive and wafer is pushed up broken, and the measuring system that distributes of decile be conducive to wafer when separated with electrostatic chuck stressed evenly and direction of motion there is not deflection.
Accompanying drawing explanation
Accompanying drawing 3 width of the present invention,
Fig. 1 is electrostatic chuck measurement mechanism structural representation.
Fig. 2 is electrostatic chuck measurement mechanism measuring system structural representation.
Fig. 3 is that electrostatic chuck measurement mechanism drives and drive system structure schematic diagram.
In Fig. 1, Fig. 2, Fig. 3:
1. chamber support, 2. view window, 3. linear bearing, 4. motor support base, 5. vertical motor, 6. axis of guide fixture, the 7. axis of guide, 8. aspirating hole, 9. electrostatic chuck web member, 10. electrostatic chuck, 11. wafers, 12. chamber housings, 13. plasma input ports, 14. measuring systems, 15. data transmission mouths, 16. sensor base, 17. pressure transducers, 18 support members, 19 dynamic seals.
Wherein control system is not shown in figures, and it is this area universal architecture.
Embodiment
Following non-limiting example can make the present invention of those of ordinary skill in the art's comprehend, but does not limit the present invention in any way.
Embodiment 1
The measurement mechanism of electrostatic chuck Electrostatic Absorption power and desorption time, comprising:
Vacuum chamber; Described vacuum chamber comprises chamber housing 12, view window 2, function reserved opening and vacuum acquisition device; The measurement data that described measurement mechanism obtains spreads out of by the function reserved opening on vacuum chamber 12; Described vacuum acquisition device comprises dry pump and molecular pump, and described dry pump and described molecular pump are connected in parallel, and by pipeline, is connected with vacuum chamber 12; Described function reserved opening comprises data transmission mouth 15, plasma input port 13 and aspirating hole 8; Described data transmission mouth 15 is positioned at cavity bottom, and pressure transducer 17 DOL Data Output Line are connected with the data acquisition system (DAS) of chamber outside by data transmission mouth 15, and wherein data transmission mouth 15 seals by static seal; Plasma input port 13 is positioned at vacuum chamber crown center position, for the input of external plasma, by ring flange, is connected with external plasma input channel; Aspirating hole 8 is positioned at cavity bottom, is connected, thereby utilizes vacuum acquisition device to make chamber obtain the vacuum state that meets technological requirement by ring flange with vacuum acquisition device; Chamber bottom is provided with mounting hole;
Three above measuring systems, described each measuring system is circumference equal dividing distribution measurement system 14 in chamber bottom; Each measuring system is fixedly mounted on the bottom in described vacuum chamber, is positioned at the below of described electrostatic chuck 10; Each measuring system 14 comprises: sensor base 16, pressure transducer 17 and support member 18, described pressure transducer 17 is arranged in sensor base 16, sensor base 16 is fixed on chamber bottom, pressure transducer 17 tops are connected with described support member 18, and described support member 18 is suitable for supporting wafers; The PIN hole (centre hole) that support member 18 carries through electrostatic chuck 10 contacts with wafer, and described support member 18 is thimble or pin;
Glue chamber support 1, described glue chamber support 1 is suitable for supporting vacuum chamber;
And power system, described power system is arranged on described vacuum chamber, and described power system drives described electrostatic chuck 10 moving up near described measuring system with away from the side of described measuring system.
Wherein, power system comprises:
Gearing, described gearing is connected with described electrostatic chuck; Gearing comprises: linear bearing 3, axis of guide fixture 6, the axis of guide 7, electrostatic chuck web member 9, the dynamic seal 19 matching with described mounting hole and the described axis of guide 7; The axis of guide is the motive seal with chamber bottom by the realization of motive seal axle sleeve; The axis of guide 7 one end are connected with described drive unit by axis of guide fixture 6, the other end enters in described vacuum chamber by dynamic seal 19, the described axis of guide 7 one end are connected with described drive unit by axis of guide fixture 6, the other end enters in described vacuum chamber by dynamic seal 19, by described linear bearing 3, be connected with described electrostatic chuck web member 9, described electrostatic chuck web member 9 is connected with electrostatic chuck 10 by bolt, and described electrostatic chuck web member 9 is connected with electrostatic chuck 10 by bolt.
And drive unit, described drive unit is arranged on described glue chamber support 1, and drive unit is positioned at the below of vacuum chamber; Drive unit connects described gearing, and moves by the electrostatic chuck in actuator drives vacuum chamber, and drive unit comprises: motor support base 4, vertical motor 5 and in order to control the control system of described vertical motor 5 precise motions.
The mensuration of absorption affinity: in the measuring process of Electrostatic Absorption power size, first to starting vacuum acquisition device, make chamber interior in vacuum state, then to electrostatic chuck 10 energisings, make electrostatic chuck 10 adsorb wafer 11 to be processed completely, can be by plasma input port 13 to chamber interior input plasma, utilize control system to start vertical motor 5, vertical motor 5 drive axis of guides rectilinear motion Shang Xia 7, because the axis of guide 7 is connected by electrostatic chuck web member 9 with electrostatic chuck body 10, thereby electrostatic chuck body 10 is produced to move up and down, because pressure transducer 17 maintains static at chamber inner bottom part, when vertical motor 5 drives electrostatic chuck body 10 to move downward, supporting role due to support member 18, make electrostatic chuck 10 produce separated with wafer 11 to be processed, along with moving down of electrostatic chuck 10, the reading of pressure transducer 17 can constantly increase, in whole process, the numerical value of pressure transducer 17 can spread out of by data transmission mouth 15, by the control system of chamber outside, can read in real time the numerical value of pressure transducer 17, when an absorption affinity for 17 pairs of wafers 11 of pressure transducer is more than or equal to the absorption affinity of electrostatic chuck 10, wafer 11 can produce separated with electrostatic chuck 10, now the reading of pressure transducer 17 can produce unexpected decline, the maximal value of pressure transducer 17 is the Electrostatic Absorption power size of electrostatic chuck 10.
The mensuration of desorption time: in the measuring process of wafer desorption time, first to starting vacuum acquisition device, make chamber interior in vacuum state, then to electrostatic chuck 10 energisings, make electrostatic chuck 10 adsorb wafer 11 to be processed completely, by plasma input port 13, to chamber interior, input plasma, utilize control system to start vertical motor 5, by the accurate displacement of adjusting vertical motor 5 of control system, make electrostatic chuck 10 and wafer 11 to be processed produce the trend of relative separation, now pressure transducer 17 produces reading, when its reading is slightly larger than the deadweight of wafer 11, by control system, control vertical motor 5 and keep constant to the absorption affinity size of electrostatic chuck 10, at t1, constantly disconnect the absorption power supply of electrostatic chuck 10, Electrostatic Absorption power fades away, when Electrostatic Absorption power disappears completely, 10 pairs of wafers 11 of electrostatic chuck no longer include adsorption, now the reading of pressure transducer 17 can sport the deadweight of wafer 11, remember the moment t2 of pressure transducer 17 reading sudden changes, t2-t1 is the desorption time of wafer 11.
Claims (10)
1. a measurement mechanism for electrostatic chuck Electrostatic Absorption power and desorption time, is characterized in that, comprising:
Vacuum chamber;
Electrostatic chuck (10); Described electrostatic chuck is located in vacuum chamber;
Measuring system (14), described measuring system is located in vacuum chamber, and described measuring system is positioned at the below of described electrostatic chuck (10);
And power system, described power system is arranged on described vacuum chamber, and described power system is used for driving measurement of electrostatic chuck to move, and makes described measuring system and electrostatic chuck produce relative motion.
2. measurement mechanism according to claim 1, is characterized in that, described measuring system is fixedly mounted on the bottom in described vacuum chamber; Described power system drives described electrostatic chuck (10) moving up near described measuring system with away from the side of described measuring system.
3. measurement mechanism according to claim 2, is characterized in that,
Described power system comprises:
Gearing, described gearing is connected with described electrostatic chuck;
And drive unit, described drive unit connects described gearing, and moves by the electrostatic chuck in actuator drives vacuum chamber.
4. measurement mechanism according to claim 3, is characterized in that, described measurement mechanism also comprises:
Chamber support (1), described chamber support (1) is suitable for supporting vacuum chamber; It is upper that described drive unit is arranged on described chamber support (1), and described drive unit is positioned at the below of vacuum chamber;
Described drive unit comprises: motor support base (4), vertical motor (5) and in order to control the control system of described vertical motor (5) precise motion.
5. measurement mechanism according to claim 4, is characterized in that, described chamber bottom is provided with mounting hole;
Described gearing comprises: linear bearing (3), axis of guide fixture (6), the axis of guide (7), electrostatic chuck web member (9), the dynamic seal (19) matching with described mounting hole and the described axis of guide (7);
The described axis of guide (7) one end is connected with described drive unit by axis of guide fixture (6), the other end enters in described vacuum chamber by dynamic seal (19), by described linear bearing (3), be connected with described electrostatic chuck web member (9), described electrostatic chuck web member (9) is connected with electrostatic chuck (10) by bolt.
6. measurement mechanism according to claim 1, it is characterized in that, described measuring system (14) comprising: sensor base (16), pressure transducer (17) and support member (18), described pressure transducer (17) is arranged in sensor base (16), sensor base (16) is fixed on chamber bottom, pressure transducer (17) top is connected with described support member (18), and described support member (18) is suitable for supporting wafers.
7. measurement mechanism according to claim 6, is characterized in that, the PIN hole that described support member (18) carries through electrostatic chuck (10) contacts with wafer, and described support member (18) is thimble or pin.
8. measurement mechanism according to claim 6, is characterized in that, described measurement mechanism comprises three the above measuring systems, and described each measuring system is circumference equal dividing in chamber bottom and distributes.
9. measurement mechanism according to claim 1, is characterized in that, described vacuum chamber comprises chamber housing (12), view window (2), function reserved opening and vacuum acquisition device;
The measurement data that described measurement mechanism obtains spreads out of by the function reserved opening on vacuum chamber (12);
Described vacuum acquisition device comprises dry pump and molecular pump, and described dry pump and described molecular pump are connected in parallel, and by pipeline, is connected with vacuum chamber (12).
10. measurement mechanism according to claim 9, is characterized in that, described function reserved opening comprises data transmission mouth (15), plasma input port (13) and aspirating hole (8); Described data transmission mouth (15) is positioned at cavity bottom, and pressure transducer (17) DOL Data Output Line is connected with the data acquisition system (DAS) of chamber outside by data transmission mouth (15), and wherein data transmission mouth (15) seals by static seal; Plasma input port (13) is positioned at vacuum chamber crown center position, by ring flange, is connected with external plasma input channel, and aspirating hole (8) is positioned at cavity bottom, by ring flange, is connected with vacuum acquisition device.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310689053.4A CN103698070A (en) | 2013-12-17 | 2013-12-17 | Device for measuring electrostatic adsorption force and desorption time of electrostatic chuck |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310689053.4A CN103698070A (en) | 2013-12-17 | 2013-12-17 | Device for measuring electrostatic adsorption force and desorption time of electrostatic chuck |
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| CN201310689053.4A Pending CN103698070A (en) | 2013-12-17 | 2013-12-17 | Device for measuring electrostatic adsorption force and desorption time of electrostatic chuck |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104062040A (en) * | 2014-07-08 | 2014-09-24 | 北京华卓精科科技有限公司 | Device for measuring electrostatic adsorption force of electrostatic chuck |
| CN105241599A (en) * | 2015-11-05 | 2016-01-13 | 清华大学 | Detection system and detection method for electrostatic force of electrostatic chuck |
| CN110491819A (en) * | 2018-05-14 | 2019-11-22 | 北京北方华创微电子装备有限公司 | The method and electrostatic chuck of equilibrium electrostatic power |
| CN110873640A (en) * | 2018-08-13 | 2020-03-10 | 北京华卓精科科技股份有限公司 | Electrostatic chuck performance detection device and detection method |
| CN114321576A (en) * | 2020-10-09 | 2022-04-12 | 上海交通大学 | Three-dimensional vacuum motion system and application thereof |
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| CN1229269A (en) * | 1998-03-12 | 1999-09-22 | 松下电器产业株式会社 | Operating method and device of base plate and sticking checking method and device used thereof |
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| CN103376176A (en) * | 2013-06-21 | 2013-10-30 | 清华大学 | Device for measuring electrostatic force of electrostatic chuck |
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| CN1157482A (en) * | 1995-11-24 | 1997-08-20 | 日本电气株式会社 | Electrostatic chuck |
| CN1229269A (en) * | 1998-03-12 | 1999-09-22 | 松下电器产业株式会社 | Operating method and device of base plate and sticking checking method and device used thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104062040A (en) * | 2014-07-08 | 2014-09-24 | 北京华卓精科科技有限公司 | Device for measuring electrostatic adsorption force of electrostatic chuck |
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| CN105241599A (en) * | 2015-11-05 | 2016-01-13 | 清华大学 | Detection system and detection method for electrostatic force of electrostatic chuck |
| CN105241599B (en) * | 2015-11-05 | 2017-09-22 | 清华大学 | The detecting system and detection method of electrostatic chuck electrostatic force |
| CN110491819A (en) * | 2018-05-14 | 2019-11-22 | 北京北方华创微电子装备有限公司 | The method and electrostatic chuck of equilibrium electrostatic power |
| CN110873640A (en) * | 2018-08-13 | 2020-03-10 | 北京华卓精科科技股份有限公司 | Electrostatic chuck performance detection device and detection method |
| CN114321576A (en) * | 2020-10-09 | 2022-04-12 | 上海交通大学 | Three-dimensional vacuum motion system and application thereof |
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Application publication date: 20140402 |