CN103695849A - Zinc-gallium-aluminum ternary oxide rotary ceramic target and preparation method thereof - Google Patents
Zinc-gallium-aluminum ternary oxide rotary ceramic target and preparation method thereof Download PDFInfo
- Publication number
- CN103695849A CN103695849A CN201310706351.XA CN201310706351A CN103695849A CN 103695849 A CN103695849 A CN 103695849A CN 201310706351 A CN201310706351 A CN 201310706351A CN 103695849 A CN103695849 A CN 103695849A
- Authority
- CN
- China
- Prior art keywords
- oxide
- zinc
- preparation
- ceramic target
- rotary ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention relates to a zinc-gallium-aluminum ternary oxide (hollow tubular shape) rotary ceramic target and a preparation method thereof. The rotary ceramic target is characterized by comprising the following raw materials in percentage by mass: 0.5-3.5% of gallium oxide, 0.5-2.5% of aluminum oxide, 0.002-0.05% of tungsten oxide and the balance of zinc oxide. According to the preparation method, the zinc oxide, gallium oxide, aluminum oxide and trace tungsten oxide are used as raw materials, and the components are uniformly distributed in a matrix by virtue of the dry mixing, roasting and wet ball milling dispersion treatment processes; and the ternary oxide mixed powder has good dispersity and sintering activity. The rotary ceramic target has high density and high yield, the process equipment is simple, the cost is relatively low, and industrialization is easy to realize. The target has high density, low poisoning rate, visible light (400-700nm) transmittance (more than or equal to 90%) and near-infrared region (700-1,400nm) transmittance ( more than or equal to 85%), and is suitable for DC-magnetron sputtering large-area film photovoltaic cell coating.
Description
Technical field
The present invention relates to a kind of zinc gallium aluminium ternary oxide (hollow tubular) rotary ceramic target and preparation method thereof.
Background technology
ZnO is a kind of wide energy gap multifunctional semiconductor material, has gas sensing property, pressure-sensitive, piezoelectricity, transparent conductivity, photo electric and be easy to multiple semiconductor material to realize the excellent character such as integrated.In fields such as the ultraviolet light detectors such as display device, nonlinear optics device, luminescent device, surface acoustic wave device, solar cell, thermal radiation speculum and integrated opticss, there is important application.Zno-based film is various with its performance, be widely used and the outstanding advantage such as cheap, and preparation method is various, technique is relatively simple, be easy to doping vario-property becomes preparation TCO(transparent conductive oxide) film important materials.It represents that material is AZO(aluminium doping), the doping of GZO(gallium), the doping of BZO(boron) etc.
Performance and the application of the TCO film that the zinc oxide being adulterated by single-element forms, because the inherent nature of its contained element itself is restricted.In order to optimize optics, electricity and the chemical property of TCO film, the new multicomponent compound transparent conductive oxide film being comprised of many oxide can be formed with element set and be assigned to obtain optimum performance by adjustment.
It is to use magnetron sputtering technique that transparent conductive film is prepared main technique.Coating performance and target performance are closely related.In coating process, often going wrong is so-called target " poisoning " phenomenon, i.e. paradoxical discharge and target material surface granulating (depositing again) cause the sputter procedure can not be continuous, and film performance is deteriorated, and production efficiency reduces.It has been generally acknowledged that, low compactness target, because its void content is high and poorly conductive, is the one of the main reasons that causes above-mentioned phenomenon, and high-density has become the important indicator of weighing target performance.Meanwhile, suitable trace doped target " poisoning " phenomenon that is also conducive to improve.Secondly, technical progress along with filming equipment, the target with particular cross-section structure is just replacing traditional planar targets and is being widely applied, hollow tubular rotary target material for example, compared to planar targets, 360 ° of target surfaces of rotary target material can be by even etching, utilization ratio is up to 80%, and there is no sedimentary province again, coating quality and plated film temporal correlation are low, can accomplish higher sputter rate.Become big area, TCO film developing direction is prepared in Large-power High-Speed sputter.In addition, aspect TCO film performance, especially apply the thin film solar cell of silica-based or other materials, should there is better visible ray and near infrared light transmitance, to guarantee to obtain higher photoelectric transformation efficiency.
Summary of the invention
One of object of the present invention is to provide a kind of high utilization rate, high-density, low fouling rate, improves the zinc gallium aluminium ternary oxide rotary ceramic target of visible ray and near-infrared region transmitance;
Two of object of the present invention is to provide a kind of preparation method of above-mentioned target, and the method processing unit is simple, and cost is lower, is easy to suitability for industrialized production.
A zinc gallium aluminium ternary oxide rotary ceramic target, its special feature is, raw material forms and is by percentage to the quality: gallium oxide content is that 0.5-3.5%, alumina content are that 0.5-2.5%, tungsten oxide content are 0.002-0.05%, and surplus is zinc oxide.
Target density>=5.56g/cm wherein
3, body resistivity≤3m Ω .cm, crystal phase structure is single-phase hexagonal wurtzite ZnO.
A preparation method for zinc gallium aluminium ternary oxide rotary ceramic target, its special feature is, comprises the steps:
(1) according to the proportioning raw materials of recording in claim 1, by after gallium oxide, aluminum oxide, zinc oxide and Tungsten oxide 99.999 powder dry mixed, carry out roasting, powders calcined is disperseed with deionized water or dehydrated alcohol wet ball grinding, slurry atomization granulation;
(2) prilling powder obtaining packs mould into, and cold isostatic compaction is made hollow tubular biscuit, by biscuit sintering in oxygen atmosphere, obtains zinc gallium aluminium ternary oxide tubular body, obtains hollow tubular sputtering target material after cutting, grinding, polishing.
Zinc oxide powder specific surface area 4-10m in step (1)
2/ g, alumina powder is γ-Al
2o
3, specific surface area 10-25m
2/ g; Gallium oxide powder is β-Ga
2o
3, specific surface area 3-10m
2/ g; Tungsten oxide 99.999 powder is WO
3, specific surface area 1-6m
2/ g.
In step (1), the maturing temperature of dry mixed powder is 600-1000 ℃, and the time is 2-10hr.
Further, maturing temperature is 800-950 ℃, and the time is 4-6hr.
The powders calcined of step (1) Raw zinc oxide, aluminum oxide, gallium oxide and Tungsten oxide 99.999 is disperseed through wet ball grinding, and Specific Surface Area Measurement is 3-10m
2/ g.
Further, Specific Surface Area Measurement is 6-8m
2/ g.
PO in step (2)
2for 0.1-0.3MPa, oxygen flow 20-200L/min.
In step (2), adopt rubber mold.
Compared with prior art, the present invention has following beneficial effect:
1, to take zinc oxide, gallium oxide, aluminum oxide and trace oxidation tungsten powder be raw material in the present invention, adopt dry mixed, roasting, wet ball grinding dispersion treatment technique, each component is evenly distributed in matrix, and ternary oxide powder mix has good dispersion and sintering activity.Hollow tubular oxidate sintered body has high compactness, high rate of finished products, and processing unit is simple, and cost is lower, is easy to suitability for industrialized production.
2, the inventive method provides a kind of material to consist of: zinc oxide (94-99%, mass%), gallium oxide (0.5-3.5%, the preparation method of the ternary oxide hollow tubular target that mass%), aluminum oxide (0.5-2.5%, mass%), tungsten oxide content are 0.002-0.05%.Target density>=5.56g/cm
3, body resistivity≤3m Ω .cm, crystalline phase be single-phase hexagonal wurtzite ZnO structure.This target has high-density, low fouling rate, visible ray (400-700nm) transmitance >=90%, and near-infrared region (700-1400nm) transmitance >=85% is applicable to the requirement of DC-magnetron sputtering large area film photovoltaic cell plated film.
Embodiment
Preparation method of the present invention completes as follows:
1. according to composition, by purity >=99.95% and the suitable gallium oxide, aluminum oxide, zinc oxide, Tungsten oxide 99.999 powder of specific surface area in proportion after dry mixed, in 600-1000 ℃ of roasting 2-10hr.Powders calcined is disperseed with deionized water or dehydrated alcohol wet ball grinding, to Specific Surface Area Measurement 3-10m
2/ g, slurry atomization granulation.
2. cold isostatic compaction: pack the atomization granulation powder of above-mentioned steps 1 into rubber mold, under 240-320MPa, pressurize 5-20min makes hollow tubular biscuit, and wherein molding biscuit relative density is 65-75%.
3. for controlling the characteristics such as target sintered compact crystal phase structure, compactness, body resistivity, degree of deformation, adopt following sintering process: room temperature-900 ℃, temperature rise rate 2-8 ℃/min; 900-1200 ℃, temperature rise rate 1-3 ℃/min; 1200-1500 ℃, temperature rise rate 0.5-1 ℃/min, insulation 2-10hr; Oxygen sintering atmosphere,
for 0.1-0.3MPa, oxygen flow 20-200L/min.
4. obtain zinc gallium aluminium ternary oxide tubular body, after cutting, grinding, polishing, hollow tubular rotary ceramic target,
5. by above-mentioned steps, obtain target density>=5.56g/cm
3, body resistivity≤3m Ω .cm, crystal phase structure is single-phase hexagonal wurtzite ZnO.The high utilization rate tubular rotary target with high-density, low fouling rate, visible ray and near-infrared region high permeability.
Embodiment 1:
Select purity >=99.95% oxide powder.Take specific surface area 6.8m
2/ g Zinc oxide powder 9600g; Specific surface area 13.5m
2/ g γ-Al
2o
3powder 150g; Specific surface area 5.6m
2/ g β-Ga
2o
3powder 250g; Specific surface area 3m
2/ g WO
3powder 5g.After dry mixed 4hr in 800 ℃ of roasting 4hr.Powders calcined be take deionized water or dehydrated alcohol and is disperseed as grinding medium wet ball grinding, to Specific Surface Area Measurement 6-7m
2/ g, slurry atomization granulation.Pack atomization granulation powder into rubber mold, under 280MPa, pressurize 10min cold isostatic compaction is made hollow tubular biscuit, and molding biscuit relative density is 67%.
Molding biscuit be take oxygen as sintering atmosphere,
for 0.2MPa, under oxygen flow 100L/min condition.Sintering process is room temperature-900 ℃, 5 ℃/min of temperature rise rate; 900-1200 ℃, 2 ℃/min of temperature rise rate; 1200-1400 ℃, 0.8 ℃/min of temperature rise rate, 1400 ℃ of insulation 8hr.
Obtain zinc gallium aluminium ternary oxide tubular body, after cutting, grinding, polishing, obtain hollow tubular rotary target material.
Archimedes's method detects target density 5.58g/cm
3, four probe method monitored body resistance rate 1.8m Ω .cm, it is single-phase hexagonal wurtzite ZnO that XRD detects crystal phase structure.Take special glass as substrate, DC magnetron sputtering plating, nesa coating is at wavelength 400-700nm, film average transmittance 91%, wavelength 700-1400nm, film average transmittance 85%.
Embodiment 2:
Select purity >=99.95% oxide powder.Take specific surface area 5.3m
2/ g Zinc oxide powder 9540g; Specific surface area 12m
2/ g γ-Al
2o
3powder 200g; Specific surface area 6.6m
2/ g β-Ga
2o
3powder 260g; Specific surface area 2m
2/ g WO
3powder 3g.After dry mixed 5hr in 950 ℃ of roasting 4hr.Powders calcined be take deionized water or dehydrated alcohol and is disperseed as grinding medium wet ball grinding, to Specific Surface Area Measurement 7-8m
2/ g, slurry atomization granulation.Pack atomization granulation powder into rubber mold, under 320MPa, pressurize 10min cold isostatic compaction is made hollow tubular biscuit, and molding biscuit relative density is 72%.
Molding biscuit be take oxygen as sintering atmosphere,
for 0.1MPa, under oxygen flow 30L/min condition.Sintering process is room temperature-900 ℃, 7 ℃/min of temperature rise rate; 900-1250 ℃, 3 ℃/min of temperature rise rate; 1250 ℃ of insulation 3hr, 1250-1450 ℃, 1 ℃/min of temperature rise rate, 1450 ℃ of insulation 5hr.
Obtain zinc gallium aluminium ternary oxide tubular body, after cutting, grinding, polishing, obtain hollow tubular rotary target material.
Archimedes's method detects target density 5.591g/cm
3, four probe method monitored body resistance rate 1.6m Ω .cm, it is single-phase hexagonal wurtzite ZnO that XRD detects crystal phase structure.Take special glass as substrate, DC magnetron sputtering plating, nesa coating is at wavelength 400-700nm, film average transmittance 90%, wavelength 700-1400nm, film average transmittance 87%.
Comparative example 1:
Select purity >=99.95% oxide powder.Take specific surface area 6.8m
2/ g Zinc oxide powder 9800g; Specific surface area 13.5m
2/ g γ-Al
2o
3powder 200g; Trace oxidation tungsten powder undopes.After dry mixed 3hr in 800 ℃ of roasting 4hr.Powders calcined be take deionized water or dehydrated alcohol and is disperseed as grinding medium wet ball grinding, to Specific Surface Area Measurement 6-7m
2/ g, slurry atomization granulation.Pack atomization granulation powder into rubber mold, under 280MPa, pressurize 10min cold isostatic compaction is made hollow tubular biscuit, and molding biscuit relative density is 69%.
Molding biscuit be take oxygen as sintering atmosphere,
for 0.2MPa, under oxygen flow 100L/min condition.Sintering process is room temperature-900 ℃, 5 ℃/min of temperature rise rate; 900-1200 ℃, 2 ℃/min of temperature rise rate; 1200-1400 ℃, 0.7 ℃/min of temperature rise rate, 1400 ℃ of insulation 8hr.
Obtain Zinc-aluminum binary oxide compound tubular body, after cutting, grinding, polishing, obtain hollow tubular rotary target material.
Archimedes's method detects target density 5.54g/cm
3, four probe method monitored body resistance rate 4.2m Ω .cm, it is single-phase hexagonal wurtzite ZnO that XRD detects crystal phase structure.Take special glass as substrate, DC magnetron sputtering plating, nesa coating is at wavelength 400-700nm, film average transmittance 87%, wavelength 700-1400nm, film average transmittance 75%.
Claims (10)
1. a zinc gallium aluminium ternary oxide rotary ceramic target, is characterized in that, raw material composition is by percentage to the quality: gallium oxide content is that 0.5-3.5%, alumina content are that 0.5-2.5%, tungsten oxide content are 0.002-0.05%, and surplus is zinc oxide.
2. a kind of zinc gallium aluminium ternary oxide rotary ceramic target as claimed in claim 1, is characterized in that: target density>=5.56g/cm wherein
3, body resistivity≤3m Ω .cm, crystal phase structure is single-phase hexagonal wurtzite ZnO.
3. a preparation method for zinc gallium aluminium ternary oxide rotary ceramic target, is characterized in that, comprises the steps:
(1) according to the proportioning raw materials of recording in claim 1, by after gallium oxide, aluminum oxide, zinc oxide and Tungsten oxide 99.999 powder dry mixed, carry out roasting, powders calcined is disperseed with deionized water or dehydrated alcohol wet ball grinding, slurry atomization granulation;
(2) prilling powder obtaining packs mould into, and cold isostatic compaction is made hollow tubular biscuit, by biscuit sintering in oxygen atmosphere, obtains zinc gallium aluminium ternary oxide tubular body, obtains hollow tubular sputtering target material after cutting, grinding, polishing.
4. the preparation method of a kind of zinc gallium aluminium ternary oxide rotary ceramic target as claimed in claim 3, is characterized in that: Zinc oxide powder specific surface area 4-10m in step (1)
2/ g, alumina powder is γ-Al
2o
3, specific surface area 10-25m
2/ g; Gallium oxide powder is β-Ga
2o
3, specific surface area 3-10m
2/ g; Tungsten oxide 99.999 powder is WO
3, specific surface area 1-6m
2/ g.
5. the preparation method of a kind of zinc gallium aluminium ternary oxide rotary ceramic target as claimed in claim 3, is characterized in that: in step (1), the maturing temperature of dry mixed powder is 600-1000 ℃, and the time is 2-10hr.
6. the preparation method of a kind of zinc gallium aluminium ternary oxide rotary ceramic target as claimed in claim 5, is characterized in that: maturing temperature is 800-950 ℃, and the time is 4-6hr.
7. the preparation method of a kind of zinc gallium aluminium ternary oxide rotary ceramic target as claimed in claim 3, it is characterized in that: the powders calcined of step (1) Raw zinc oxide, aluminum oxide, gallium oxide and Tungsten oxide 99.999 is disperseed through wet ball grinding, and Specific Surface Area Measurement is 3-10m
2/ g.
8. the preparation method of a kind of zinc gallium aluminium ternary oxide rotary ceramic target as claimed in claim 7, is characterized in that: Specific Surface Area Measurement is 6-8m
2/ g.
9. the preparation method of a kind of zinc gallium aluminium ternary oxide rotary ceramic target as claimed in claim 3, is characterized in that: PO in step (2)
2for 0.1-0.3MPa, oxygen flow 20-200L/min.
10. the preparation method of a kind of zinc gallium aluminium ternary oxide rotary ceramic target as claimed in claim 3, is characterized in that: in step (2), adopt rubber mold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310706351.XA CN103695849B (en) | 2013-12-20 | 2013-12-20 | A kind of zinc gallium aluminium ternary oxide rotary ceramic target and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310706351.XA CN103695849B (en) | 2013-12-20 | 2013-12-20 | A kind of zinc gallium aluminium ternary oxide rotary ceramic target and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103695849A true CN103695849A (en) | 2014-04-02 |
| CN103695849B CN103695849B (en) | 2017-06-20 |
Family
ID=50357507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310706351.XA Active CN103695849B (en) | 2013-12-20 | 2013-12-20 | A kind of zinc gallium aluminium ternary oxide rotary ceramic target and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103695849B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106278287A (en) * | 2015-06-08 | 2017-01-04 | 深圳大学 | A kind of WO3the preparation of cladding AZO powder body and sintering method thereof |
| CN107523794A (en) * | 2017-09-07 | 2017-12-29 | 于盟盟 | A kind of target for being used to sputter transparent conductive film |
| CN112341168A (en) * | 2020-09-23 | 2021-02-09 | 先导薄膜材料（广东）有限公司 | Rare earth doped zinc-gallium-aluminum oxide powder and preparation method thereof |
| CN113215545A (en) * | 2021-05-12 | 2021-08-06 | 杭州盛宣新材料科技有限公司 | Method for preparing Ni-doped zinc-aluminum oxide conductive film material by adopting magnetron sputtering technology |
| CN114524664A (en) * | 2022-02-25 | 2022-05-24 | 洛阳晶联光电材料有限责任公司 | Ceramic target material for solar cell and preparation method thereof |
| CN115141012A (en) * | 2022-07-25 | 2022-10-04 | 宁波江丰电子材料股份有限公司 | Ternary metal oxide ceramic target material and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009078329A1 (en) * | 2007-12-19 | 2009-06-25 | Hitachi Metals, Ltd. | Zinc oxide sintered compact, process for producing the zinc oxide sintered compact, sputtering target, and electrode |
| US20090197757A1 (en) * | 2006-08-11 | 2009-08-06 | Hitachi Metals, Ltd. | Zinc oxide ceramics and a manufacturing method for the same, a sputtering target |
| CN101661808A (en) * | 2009-09-15 | 2010-03-03 | 中国科学院上海硅酸盐研究所 | Multi-doping zinc-oxide-base wide-bandgap conducting material and preparation method thereof |
-
2013
- 2013-12-20 CN CN201310706351.XA patent/CN103695849B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090197757A1 (en) * | 2006-08-11 | 2009-08-06 | Hitachi Metals, Ltd. | Zinc oxide ceramics and a manufacturing method for the same, a sputtering target |
| WO2009078329A1 (en) * | 2007-12-19 | 2009-06-25 | Hitachi Metals, Ltd. | Zinc oxide sintered compact, process for producing the zinc oxide sintered compact, sputtering target, and electrode |
| CN101661808A (en) * | 2009-09-15 | 2010-03-03 | 中国科学院上海硅酸盐研究所 | Multi-doping zinc-oxide-base wide-bandgap conducting material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 王延峰等: "W掺杂ZnO透明导电薄膜的理论及实验研究", 《物理学报》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106278287A (en) * | 2015-06-08 | 2017-01-04 | 深圳大学 | A kind of WO3the preparation of cladding AZO powder body and sintering method thereof |
| CN106278287B (en) * | 2015-06-08 | 2019-04-26 | 深圳大学 | A kind of WO3Coat preparation and its sintering method of AZO powder |
| CN107523794A (en) * | 2017-09-07 | 2017-12-29 | 于盟盟 | A kind of target for being used to sputter transparent conductive film |
| CN112341168A (en) * | 2020-09-23 | 2021-02-09 | 先导薄膜材料（广东）有限公司 | Rare earth doped zinc-gallium-aluminum oxide powder and preparation method thereof |
| CN113215545A (en) * | 2021-05-12 | 2021-08-06 | 杭州盛宣新材料科技有限公司 | Method for preparing Ni-doped zinc-aluminum oxide conductive film material by adopting magnetron sputtering technology |
| CN114524664A (en) * | 2022-02-25 | 2022-05-24 | 洛阳晶联光电材料有限责任公司 | Ceramic target material for solar cell and preparation method thereof |
| CN115141012A (en) * | 2022-07-25 | 2022-10-04 | 宁波江丰电子材料股份有限公司 | Ternary metal oxide ceramic target material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103695849B (en) | 2017-06-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103695849A (en) | Zinc-gallium-aluminum ternary oxide rotary ceramic target and preparation method thereof | |
| Kim et al. | Effects of Cu doping on nickel oxide thin film prepared by sol–gel solution process | |
| KR101841314B1 (en) | Sintered oxide material, method for manufacturing same, sputtering target, oxide transparent electrically conductive film, method for manufacturing same, and solar cell | |
| CN101661808B (en) | Multi-doping zinc-oxide-base wide-bandgap conducting material and preparation method thereof | |
| JP5884549B2 (en) | Transparent oxide film and method for producing the same | |
| JP3906766B2 (en) | Oxide sintered body | |
| CN101851745B (en) | Indium zinc gallium oxide (IZGO) sputtering target for transparent conductive film and manufacturing method | |
| CN104416160B (en) | High-density zinc oxide based target and preparation method thereof | |
| TW201435105A (en) | Zinc oxide-based transparent conductive film | |
| CN101158049A (en) | Method for preparing P-type transparent conductive oxide CuAlO2 film | |
| CN101851740A (en) | Conductive Nb2O5-x target material for magnetron sputtering coating and production method thereof | |
| CN101851739A (en) | AZO sputtering target for high-stability transparent conductive film and manufacturing method | |
| CN102603285A (en) | Preparation method of zinc oxide-based tubular rotary target material | |
| CN103896578B (en) | A kind of preparation method of high density low resistivity zinc oxide ceramic target | |
| CN105374901A (en) | Preparation method for IWO material used for thin film solar cell transparent electrode | |
| CN101885609B (en) | Method for preparing zinc oxide-based ceramic sputtering target material at intermediate temperature | |
| CN109879667B (en) | Preparation method of dense oxygen-loss zinc oxide ceramic body | |
| CN102260073A (en) | Zinc-oxide-based low-voltage voltage-sensitive ceramic thin film material and preparation method thereof | |
| CN102181826B (en) | Gallium-molybdenum-codoped indium tin oxide ceramic target, gallium-molybdenum-codoped indium tin oxide transparent conductive film and preparation method | |
| CN108914064B (en) | Multi-element conductive oxide material for RPD and preparation method thereof | |
| TW201013709A (en) | Zinc oxide group transparent conductive film and process for making same | |
| CN103668097B (en) | A kind of thermochromic thin film material and preparation thereof | |
| CN103643207A (en) | Preparation method of high-performance ZAO (Zinc Aluminum Oxide) rotating target material | |
| CN105018882B (en) | A kind of aluminium mixes the preparation method of zinc oxide transparent conductive film | |
| CN102691037B (en) | Gallium-doped zinc oxide film, and preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 753000 No. 119, Ye Jin Road, Dawukou, Shizuishan, the Ningxia Hui Autonomous Region Patentee after: Northwest rare metal materials research institute Ningxia Co., Ltd. Address before: 753000 No. 119 metallurgical Road, Dawukou District, Shizuishan, the Ningxia Hui Autonomous Region Patentee before: Xibei Inst. of Rare Metal Material |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180807 Address after: 753000 No. 119 metallurgical Road, Dawukou District, Shizuishan, the Ningxia Hui Autonomous Region Patentee after: Ningxia medium color new materials Co., Ltd. Address before: 753000 No. 119, Ye Jin Road, Dawukou, Shizuishan, the Ningxia Hui Autonomous Region Patentee before: Northwest rare metal materials research institute Ningxia Co., Ltd. |
|
| TR01 | Transfer of patent right |