CN103684354A - Ring-shaped oscillation circuit, ring-shaped oscillator and realization method thereof - Google Patents
Ring-shaped oscillation circuit, ring-shaped oscillator and realization method thereof Download PDFInfo
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Abstract
The invention discloses a ring-shaped oscillation circuit, a ring-shaped oscillator and a realization method thereof, relating to the technical field of telecommunications. A technical problem that the required precision of a ring-shaped oscillation circuit device is high in the prior art is solved. The circuit comprises a current bias generating circuit and a ring-shaped oscillator level circuit. The ring-shaped oscillator level circuit comprises at least one level of first type of inverter and at least one level of second type of inverter. The current bias generating circuit is coupled with the first type of inverter. The output end of the first type of inverter is connected with the input end of the second type of inverter. The output end of the second type of inverter is connected with the input end of the first type of inverter.
Description
Technical field
The present invention relates to telecommunication technology field, particularly a kind of annular oscillation circuit, ring oscillator and its implementation.
Background technology
For most of SOC(System on a Chip, system level chip) design, the oscillator part that is absolutely necessary, it can provide clock for chip.In various types of oscillators, ring oscillator does not need plug-in crystal, does not need to use inductor-capacitor tuning circuit, and only need to use the input that odd number inverter is connected, the output of afterbody is connected to the first order to get final product work.Consider its simple in structure and characteristic low-power consumption, ring oscillator is widely used in the less demanding occasion of frequency accuracy.Yet supply voltage and ambient temperature are larger on the output frequency impact of ring oscillator, therefore, ring oscillator cannot meet the more system of high-precision requirement to clock frequency.
In order to reach higher frequency precision, a lot of technical schemes have been carried out structural optimal design to ring oscillator, wherein, a kind of comparatively common structure circularizes oscillator for the inverter group by current limited, therefore the frequency of oscillation of oscillator is relevant to electric current, by reference current generation unit is improved, thereby supply voltage and the ambient temperature characteristic of output frequency have been improved.Yet depending primarily on the design of reference current generation unit, the precision of the last output frequency of this class scheme whether can just in time offset corresponding voltage and temperature coefficient.Due to the temperature characterisitic of device and the correlation of technique very large, undercompensation or compensate and excessively all can not obtain desirable result, therefore, for actual design, reach good temperature and voltage characteristic and there is larger design difficulty, when coefficient design is unreasonable, for example compensate when unreasonable, there is the possibility that worsens temperature or voltage characteristic.Therefore the output frequency of common ring oscillator is too large with the variation of supply voltage and ambient temperature, cannot meet the system requirements that frequency accuracy is had high requirements.
And, the ring oscillator scheme forming for the inverter by current limited, need appropriate design current generating circuit, the temperature characterisitic that configures suitable temperature coefficient and oscillator below compensates, and therefore final temperature characterisitic is comparatively responsive to the value of device in circuit.Owing to designing to such an extent that result too relies on device size and other design tacticses in circuit design, in actual design, domain do not mate and some factors more rambunctious of the deviation of technique etc. can cause the compensation effect that cannot reach expection.
Summary of the invention
In order to solve in prior art annular oscillation circuit in order to reach the object of temperature-compensating and supply voltage compensation, thereby, the technical problem that design difficulty larger high to requirement on devices precision that cause, the invention provides a kind of annular oscillation circuit, ring oscillator and its implementation.
An annular oscillation circuit, comprising: current offset produces circuit and ring oscillator stage circuit;
Ring oscillator stage circuit comprises the first inverter of one-level at least and the second inverter of one-level at least;
Current offset produces circuit and the coupling of the first inverter; The output of the first inverter is connected with the input of two kinds of inverters, and the output of the second inverter is connected with the input of the first inverter;
Wherein, the first inverter is mainly a kind of current limited inverter type; The second inverter consists of COMS inverter.
Wherein, current offset generation circuit comprises a PMOS, the 2nd PMOS, a NMOS, the 2nd NMOS and resistance R; Wherein,
The grid of the one PMOS and the 2nd PMOS formation current mirror that links together; The grid of the 2nd PMOS connects its drain electrode, the grid of the one NMOS links together and is connected with the drain electrode of a PMOS with drain electrode, the grid of the grid of the 2nd NMOS and a NMOS connects, the drain electrode of the 2nd NMOS is connected with the drain electrode of the 2nd PMOS, the source class ground connection of the one NMOS, one end of the source class contact resistance R of the 2nd NMOS, other one end of resistance R is connected to ground.
Wherein, the first inverter comprises the 3rd PMOS, the 3rd NMOS and at least one COMS inverter; Current offset produces circuit and the coupling of the first inverter, specifically comprises:
The grid of the 3rd PMOS is connected with the grid of the 2nd PMOS, and the grid of the 3rd NMOS is connected with the grid of a NMOS; The VDD-to-VSS of first CMOS inverter at least one COMS inverter connects respectively the drain electrode of the 3rd PMOS and the drain electrode of the 3rd NMOS.
The output of the first inverter is connected with the input of two kinds of inverters, and the output of the second inverter is connected with the input of the first inverter, specifically comprises:
Each COMS inverter series connection of the first and the second inverter;
In the first inverter, after series connection, the input of first CMOS inverter after the series connection of output and the second inverter of last COMS inverter is connected, and the output of last the CMOS inverter after the second inverter is connected connects back the input of first CMOS inverter of the first inverter.
A ring oscillator, comprises that right will above-mentioned annular oscillation circuit.
An implementation method for ring oscillator, comprising:
By current offset, producing circuit is the electric current with the positive temperature coefficient of independent of power voltage by the current offset of power supply;
With the first inverter in the Current Control annular oscillator stage circuit of this positive temperature coefficient;
The first inverter is subject to the Current Control of this positive temperature coefficient to produce the inverter characteristics of positive voltage, negative temperature coefficient and time delay; And the second inverter produces the inverter characteristics of negative supply voltage, positive temperature coefficient and time delay by the series connection of each COMS inverter;
By the interaction of the inverter characteristics of the first inverter and the inverter characteristics of the second inverter, formed the ring oscillator that output frequency obtains temperature-compensating and supply voltage compensation.
The simplicity of conceptual design provided by the invention, owing to having adopted two kinds of inverters to form oscillator, therefore, does not need deliberately set temperature coefficient can reach the effect of temperature-compensating.Do not need the device designs such as transistor coupling just can reach the object of supply voltage compensation.And low-power consumption, current biasing circuit is owing to being operated in sub-threshold region, therefore operating current is less, the electric current of mirror image provides power supply to inverter, power consumption is also less, because the inverter of current limited cannot directly drive outside module conventionally, in existing technology, the inverter that connects again below in ring oscillation level increases driving conventionally, and in the design, after the inverter that improve to drive become the part of ring oscillation level, therefore save the number of inverter in chain of inverters, can reach lower power consumption.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, for explaining the present invention, is not construed as limiting the invention together with embodiments of the present invention.In the accompanying drawings:
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The circuit diagram of the annular oscillation circuit that Fig. 1 provides for the embodiment of the present invention 1;
The flow chart of the method that Fig. 2 provides for the embodiment of the present invention 3.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.And following embodiment is possibility of the present invention, embodiment puts in order and the numbering of embodiment and the sequence independence that it is preferably carried out.
Embodiment 1
The present embodiment provides a kind of annular oscillation circuit, and this circuit comprises: current offset produces circuit 100 and ring oscillator stage circuit 200;
Ring oscillator stage circuit 200 comprises the first inverter 210 of one-level at least and the second inverter 211 of one-level at least; Wherein, the first inverter 210 function for Limited Current, belonging to is a kind of current limited inverter; The second inverter 211 comprises COMS inverter.
Current offset produces circuit 100 and 210 couplings of the first inverter; The output of the first inverter 210 is connected with the input of two kinds of inverters 211, and the output of the second inverter 211 is connected with the input of the first inverter 210.
Wherein, for size and independent of power voltage being provided to the first inverter 210, and with the electric current of positive temperature coefficient, the current offset providing in the present embodiment produces circuit 100 and comprises a PMOS103, the 2nd PMOS104, a NMOS102, the 2nd NMOS101 and resistance R 105; As shown in Figure 1,
The grid of the one PMOS103 and the 2nd PMOS104 formation current mirror that links together; The grid of the 2nd PMOS104 connects the drain electrode of the 2nd PMOS104, the grid of the one NMOS102 links together and is connected with the drain electrode of a PMOS103 with drain electrode, the grid of the grid of the 2nd NMOS101 and a NMOS102 connects, the drain electrode of the 2nd NMOS101 is connected with the drain electrode of the 2nd PMOS104, the source class ground connection of the one NMOS102, one end of the source class contact resistance R105 of the 2nd NMOS101, other one end ground connection of resistance R 105.
Particularly, in the first inverter, 210 comprise the 3rd PMOS204, the 3rd NMOS205 and at least one COMS201 inverter; Current offset produces circuit 100 and 210 couplings of the first inverter, specifically comprises:
The grid of the 3rd PMOS204 is connected with the grid of the 2nd PMOS104, and the grid of the 3rd NMOS205 is connected with the grid of a NMOS102;
The VDD-to-VSS of first CMOS inverter 201 at least one COMS inverter 201 connects respectively the drain electrode of the 3rd PMOS204 and the drain electrode of the 3rd NMOS205.
In preferred version, the output of the first inverter 210 is connected with the input of two kinds of inverters 211, and the output of the second inverter 211 is connected with the input of the first inverter 210, specifically comprises:
Each COMS inverter series connection of the first inverter 210 and the second inverter 211;
The input of first CMOS inverter after the output of last the COMS inverter in the first inverter 210 after series connection is connected with the second inverter 211 is connected, and the output of last the CMOS inverter after 211 series connection of the second inverter connects back the input of first CMOS inverter of the first inverter 210.
Wherein, the first inverter comprises COMS inverter; The progression of the COMS chain of inverters that the first inverter and the second inverter form is odd level.
Fig. 1 take below as example, specifically describe the annular oscillation circuit device that the present embodiment provides.Comprise that a current offset produces circuit 100 and a ring oscillator stage 200, wherein, ring oscillator stage 200 comprises at least one-level current limited inverter (the first inverter 210 as shown in Figure 1) and at least one-level CMOS inverter (the second inverter 211 as shown in Figure 1).In Fig. 1, provided the circuit diagram of a tertiary circulation shape oscillating circuit being formed by one-level current limited inverter and two-stage CMOS inverter.The progression of the chain of inverters being in fact comprised of these two kinds of inverters can also be Pyatyi or seven grades or other odd level, and odd level refers to that the sum of the first inverter and the second inverter is odd number.
Current offset produces circuit 100 by a PMOS103, the 2nd PMOS104, the one NMOS102, the 2nd NMOS101 and R105 form, the grid of a PMOS103 and the 2nd PMOS104 formation current mirror that links together wherein, the grid of the 2nd PMOS104 connects its drain electrode simultaneously, the grid of the one NMOS102 links together and is connected with the drain electrode of a PMOS103 with drain electrode, the grid of the grid of the 2nd NMOS101 and a NMOS102 connects, the drain electrode of the 2nd NMOS101 is connected with the drain electrode of the 2nd PMOS104, the source class ground connection of the one NMOS102, one end of the source class contact resistance R105 of the 2nd NMOS101, other one end of resistance R 105 is connected to ground.
Ring oscillator stage circuit 200 is by the 3rd PMOS204, the 3rd NMOS205 and three groups of inverters 201, 202, 203 form, the grid of the 3rd PMOS204 is connected with the grid of the 2nd PMOS104, the 3rd NMOS205 is connected with the grid of a NMOS102, the VDD-to-VSS of first CMOS inverter 201 connects respectively the drain electrode of the 3rd PMOS204 and the 3rd NMOS205, the output of this inverter 204 is first inverter in the second inverter with second CMOS inverter 202() input be connected, the output of second CMOS inverter 202 and the 3rd CMOS inverter 203(are last COMS inverter after each inverter series connection in the second inverter) input be connected, the inverter 201 that the output of the 3rd CMOS inverter connects back in first CMOS inverter 201(Fig. 1 is first inverter after each inverter series connection in the first inverter, also be last inverter) input.
With reference to Fig. 1, the principle of the annular oscillation circuit that the present embodiment provides is as follows: first current biasing circuit 100 produces an electric current by the VGS difference of a NMOS102 and the 2nd NMOS101 on R105, this size of current and independent of power voltage, with positive temperature coefficient, flow through the 2nd PMOS104/ the 2nd NMOS101 branch road, due to the mirror of the 1:1 of a PMOS103 and the 2nd PMOS104, on PMOS103/ an one NMOS102 branch road, therefore flow through identical electric current.The current mirror consisting of the 2nd PMOS104 pipe and the 3rd PMOS204 pipe, by the branch road of the current mirror to the of the 2nd PMOS104 three PMOS204.The current mirror forming by a NMOS102 pipe and the 3rd NMOS205 pipe, by on the branch road of the current mirror to the of a NMOS102 three NMOS205, therefore the charging current of first order inverter 201 is the electric current that flows through the 2nd PMOS104, the discharging current of first order inverter 201 is the electric current that flows through the 3rd NMOS204, charging and discharging currents value characteristic has determined the time-delay characteristics of this one-level inverter, the common COMS inverter 202 and 203 that 201 outputs of first order inverter connect has below formed a ring oscillator chain, final frequency of oscillation is determined by total time delay of chain of inverters.
Wherein, the value of the electric current I that current biasing circuit 100 produces on PMOS103/NMOS102 and PMOS104/NMOS101 branch road size is the resistance of resistance R105 on the VGS of NMOS102 pipe and the difference of the VGS of NMOS104 pipe ratio, following formula (1)
Because NMOS102 and NMOS101 are operated in sub-threshold region, formula (1) can further be written as
Wherein, M is the ratio of the breadth length ratio of MN2 and MN1, and VT is thermal voltage, and it has positive temperature coefficient, and n is the sub-threshold slope factor.When resistance adopts poly resistance, resistance is negative temperature coefficient, and therefore, this electric current has positive temperature coefficient.By PMOS current mirror, the inverter electric current of first order current limited is directly proportional to temperature, and this grade of inverter time delay raises and reduce with temperature; The threshold voltage of this grade of inverter raises with supply voltage, thereby makes inverter time delay raise and increase with supply voltage.
The second inverter in chain of inverters is common CMOS inverter, and the time delay of this inverter increases with the rising of temperature, with the rising of supply voltage, reduces.
The temperature of these two kinds of inverters and voltage characteristic are just in time anti-phase, adopt this two kinds of inverters in oscillator loop, can realize the effect of temperature-compensating and voltage compensation.By regulating the temperature coefficient of current generating circuit, can there is to the temperature of oscillator and voltage characteristic the compensation of target.Therefore the temperature voltage compensating action of this annular oscillation circuit is to the value of the concrete device of inside circuit insensitive, so can reach in use the object of temperature and voltage compensation.
The annular oscillation circuit that the present embodiment provides is because the time delay of the first inverter is just contrary with temperature characterisitic and the supply voltage characteristic of the time delay of the second inverter, therefore total time delay of chain of inverters has reached the object of compensation in temperature and supply voltage characteristic, thereby makes the output frequency of oscillator reach temperature-compensating and supply voltage compensation object.
Embodiment 2
The present embodiment provides a kind of ring oscillator, and this ring oscillator comprises the annular oscillation circuit described in embodiment 1, and the content of concrete ring oscillator is not repeated herein.
Embodiment 3
The present embodiment provides a kind of implementation method of ring oscillator, as shown in Figure 2, comprising:
For example: with reference to Fig. 1, first current biasing circuit 100 produces an electric current by the VGS difference of a NMOS102 and the 2nd NMOS101 on R105, this size of current and independent of power voltage, with positive temperature coefficient, flow through the 2nd PMOS104/ the 2nd NMOS101 branch road, due to the mirror of the 1:1 of a PMOS103 and the 2nd PMOS104, on PMOS103/ an one NMOS102 branch road, therefore flow through identical electric current.The current mirror consisting of the 2nd PMOS104 pipe and the 3rd PMOS204 pipe, by the branch road of the current mirror to the of the 2nd PMOS104 three PMOS204.The current mirror forming by a NMOS102 pipe and the 3rd NMOS205 pipe, by on the branch road of the current mirror to the of a NMOS102 three NMOS205, therefore the charging current of first order inverter 201 is the electric current that flows through the 2nd PMOS104, the discharging current of first order inverter 201 is the electric current that flows through the 3rd NMOS204, charging and discharging currents value characteristic has determined the time-delay characteristics of this one-level inverter, the common COMS inverter 202 and 203 that 201 outputs of first order inverter connect has below formed a ring oscillator chain, final frequency of oscillation is determined by total time delay of chain of inverters.
The implementation of concrete this each step please refer to the annular oscillation circuit of implementing in 1, is not repeated herein.
Implementation method provided by the invention, due to the inverter that has adopted two kinds can produce contrary temperature and supply voltage characteristic, therefore, does not need deliberately set temperature coefficient can reach the effect of temperature-compensating.Do not need the device designs such as transistor coupling just can reach the technique effect of supply voltage compensation, low-power consumption.
In the said method that the embodiment of the present invention provides, although provided the sequencing of carrying out each step, this order be only of the present invention one preferred embodiment.Obviously, those skilled in the art can carry out diversified equivalent transformation to the execution sequence of the method step according to said method, that is to say that above steps or part steps in embodiment of the present invention method can sequentially carry out according to other completely, or carry out simultaneously.For example: first perform step 104, then perform step 103; Or perform step 103 and step 104 simultaneously.The execution sequence of each step that therefore said method is described a kind of mode that only limits to provide in embodiment.
The above, it is only the specific embodiment of the present invention, but the present invention can have multiple multi-form embodiment, above by reference to the accompanying drawings the present invention is illustrated, this does not also mean that the applied embodiment of the present invention can only be confined in these specific embodiments, those skilled in the art should understand, the embodiment that above provided is some examples in multiple preferred implementation, and the embodiment of any embodiment the claims in the present invention all should be within the claims in the present invention scope required for protection; Those skilled in the art can modify to the technical scheme of recording in each embodiment above, or part technical characterictic is wherein equal to replacement.Within the spirit and principles in the present invention all, any modification of doing, be equal to and replace or improvement etc., within all should being included in the protection range of the claims in the present invention.
Claims (8)
1. an annular oscillation circuit, is characterized in that, comprising: current offset produces circuit and ring oscillator stage circuit;
Described ring oscillator stage circuit comprises the first inverter of one-level at least and the second inverter of one-level at least;
Described current offset produces circuit and the coupling of described the first inverter; The output of described the first inverter is connected with the input of two kinds of inverters, and the output of the second inverter is connected with the input of the first inverter.
2. annular oscillation circuit according to claim 1, is characterized in that, described the first inverter comprises current limited inverter; The second inverter comprises COMS inverter.
3. annular oscillation circuit according to claim 1 and 2, is characterized in that, described current offset produces circuit and comprises a PMOS, the 2nd PMOS, a NMOS, the 2nd NMOS and resistance R; Wherein,
The grid of the one PMOS and the 2nd PMOS formation current mirror that links together; The grid of the 2nd PMOS connects its drain electrode, the grid of the one NMOS links together and is connected with the drain electrode of a PMOS with drain electrode, the grid of the grid of the 2nd NMOS and a NMOS connects, the drain electrode of the 2nd NMOS is connected with the drain electrode of the 2nd PMOS, the source class ground connection of the one NMOS, one end of the source class contact resistance R of the 2nd NMOS, other one end of resistance R is connected to ground.
4. annular oscillation circuit according to claim 3, is characterized in that, the first inverter comprises the 3rd PMOS, the 3rd NMOS and at least one COMS inverter; Described current offset produces circuit and the coupling of described the first inverter, specifically comprises:
The grid of the 3rd PMOS is connected with the grid of the 2nd PMOS, and the grid of the 3rd NMOS is connected with the grid of a NMOS;
The VDD-to-VSS of first CMOS inverter at least one COMS inverter connects respectively the drain electrode of the 3rd PMOS and the drain electrode of the 3rd NMOS.
5. annular oscillation circuit according to claim 4, is characterized in that, the output of described the first inverter is connected with the input of two kinds of inverters, and the output of the second inverter is connected with the input of the first inverter, specifically comprises:
Each COMS inverter series connection of the first and the second inverter;
In the first inverter, after series connection, the input of first CMOS inverter after the series connection of output and the second inverter of last COMS inverter is connected, and the output of last the CMOS inverter after the second inverter is connected connects back the input of first CMOS inverter of the first inverter.
6. annular oscillation circuit according to claim 1 and 2, is characterized in that, described the first inverter comprises COMS inverter;
The progression of the COMS chain of inverters that described the first inverter and the second inverter form is odd level.
7. a ring oscillator, is characterized in that, comprises the annular oscillation circuit described in any one in claim 1-6.
8. an implementation method for ring oscillator, is characterized in that, comprising:
By current offset, producing circuit is the electric current with the positive temperature coefficient of independent of power voltage by the current offset of power supply;
With the first inverter in the Current Control annular oscillator stage circuit of this positive temperature coefficient;
The first inverter is subject to the Current Control of this positive temperature coefficient to produce the inverter characteristics of positive voltage, negative temperature coefficient and time delay; And the second inverter produces the inverter characteristics of negative supply voltage, positive temperature coefficient and time delay by the series connection of each COMS inverter;
By the interaction of the inverter characteristics of the first inverter and the inverter characteristics of the second inverter, formed the ring oscillator that output frequency obtains temperature-compensating and supply voltage compensation.
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| WO2018149124A1 (en) * | 2017-02-16 | 2018-08-23 | 京东方科技集团股份有限公司 | Temperature sensor, array substrate, display device, and voltage adjustment method |
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