CN103681969B - 一种基于SiC衬底光导开关制作方法 - Google Patents
一种基于SiC衬底光导开关制作方法 Download PDFInfo
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- CN103681969B CN103681969B CN201310681216.4A CN201310681216A CN103681969B CN 103681969 B CN103681969 B CN 103681969B CN 201310681216 A CN201310681216 A CN 201310681216A CN 103681969 B CN103681969 B CN 103681969B
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- photoconductive switch
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- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000011241 protective layer Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims abstract description 5
- 238000005498 polishing Methods 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 3
- 238000001039 wet etching Methods 0.000 claims abstract description 3
- 238000005538 encapsulation Methods 0.000 claims abstract 2
- 230000001681 protective effect Effects 0.000 claims abstract 2
- 239000013078 crystal Substances 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000007669 thermal treatment Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000004568 cement Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 14
- 239000012159 carrier gas Substances 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 230000004907 flux Effects 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 230000001276 controlling effect Effects 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000002019 doping agent Substances 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN201310681216.4A CN103681969B (zh) | 2013-12-12 | 2013-12-12 | 一种基于SiC衬底光导开关制作方法 |
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CN201310681216.4A CN103681969B (zh) | 2013-12-12 | 2013-12-12 | 一种基于SiC衬底光导开关制作方法 |
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CN103681969A CN103681969A (zh) | 2014-03-26 |
CN103681969B true CN103681969B (zh) | 2016-05-25 |
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CN201310681216.4A Expired - Fee Related CN103681969B (zh) | 2013-12-12 | 2013-12-12 | 一种基于SiC衬底光导开关制作方法 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104701405B (zh) * | 2015-03-05 | 2017-05-17 | 西安电子科技大学 | 碳化硅嵌入式电极异面型光导开关及其制作方法 |
CN105207648B (zh) * | 2015-08-18 | 2018-09-14 | 西安理工大学 | 一种脉冲二极管、其制备方法以及产生电脉冲的方法 |
CN106910795B (zh) * | 2017-03-15 | 2018-07-27 | 西安电子科技大学 | 基于铟锡氧化物透明电极的异面型光导开关及其制作方法 |
CN106910794B (zh) * | 2017-03-15 | 2018-07-17 | 西安电子科技大学 | 基于氧化锌透明电极的异面型光导开关及其制作方法 |
WO2019059932A1 (en) * | 2017-09-22 | 2019-03-28 | Lawrence Livermore National Security, Llc | CHARGE TRAP PHOTOCONDUCTIVE APPARATUS |
CN110824328B (zh) * | 2019-11-21 | 2022-02-01 | 京东方科技集团股份有限公司 | 一种光电转换电路、其驱动方法及探测基板 |
CN112002769B (zh) * | 2020-08-20 | 2022-10-11 | 上海航天电子通讯设备研究所 | 一种耐高压光导开关及制备方法 |
CN112490231B (zh) * | 2020-12-03 | 2023-03-14 | 中国工程物理研究院流体物理研究所 | 一种基于SiC载流子寿命调控的贴片式全固态高功率微波源 |
CN112563345B (zh) * | 2020-12-09 | 2023-04-28 | 西安交通大学 | 一种匀化平面型光导开关电场的外导体电极结构及光导开关器件和方法 |
CN116299845A (zh) * | 2023-02-20 | 2023-06-23 | 上海航天电子通讯设备研究所 | 光波导与碳化硅小尺寸界面异质键合方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157597A (zh) * | 2010-02-11 | 2011-08-17 | 中国科学院上海硅酸盐研究所 | 一种光控碳化硅光电导开关 |
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JP4901477B2 (ja) * | 2004-10-15 | 2012-03-21 | パナソニック株式会社 | 窒化化合物半導体素子およびその製造方法 |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102157597A (zh) * | 2010-02-11 | 2011-08-17 | 中国科学院上海硅酸盐研究所 | 一种光控碳化硅光电导开关 |
Non-Patent Citations (2)
Title |
---|
High power photoconductive switches of 4H SiC with Si3N4 passivation and n+-GaN subcontact;K.Zhu,D.Johnstone,etc;《superlattices and microstructures》;20070402;第41卷(第4期);正文第264页至第270页 * |
正对电极结构型碳化硅光导开关的制备与性能研究;常少辉,刘学超等;《无机材料学报》;20121031;第27卷(第10期);正文第1059页 * |
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C14 | Grant of patent or utility model | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhang Yongping Inventor after: Li Wanrong Inventor after: Chen Zhizhan Inventor after: Shi Wangzhou Inventor after: Ge Feifei Inventor after: Lu Wuyue Inventor after: Tan Jiahui Inventor after: Cheng Yue Inventor after: Zhao Gaojie Inventor after: Sun Yujun Inventor after: Liu Yihong Inventor after: Chen Enlong Inventor before: Zhang Yongping Inventor before: Chen Zhizhan Inventor before: Shi Wangzhou Inventor before: Lu Wuyue Inventor before: Tan Jiahui Inventor before: Cheng Yue Inventor before: Zhao Gaojie Inventor before: Sun Yujun Inventor before: Liu Yihong Inventor before: Chen Enlong Inventor before: Li Wanrong |
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Granted publication date: 20160525 Termination date: 20181212 |