CN103681949A - 包含铅-碲基氧化物的导电组合物在具有轻掺杂发射器的半导体装置的制造中的用途 - Google Patents
包含铅-碲基氧化物的导电组合物在具有轻掺杂发射器的半导体装置的制造中的用途 Download PDFInfo
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- CN103681949A CN103681949A CN201210472608.5A CN201210472608A CN103681949A CN 103681949 A CN103681949 A CN 103681949A CN 201210472608 A CN201210472608 A CN 201210472608A CN 103681949 A CN103681949 A CN 103681949A
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
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- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
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- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
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- ZYXPMOIHQRKWGT-UHFFFAOYSA-N silver;2,2,2-trifluoroacetic acid Chemical compound [Ag].OC(=O)C(F)(F)F ZYXPMOIHQRKWGT-UHFFFAOYSA-N 0.000 description 1
- VFWRGKJLLYDFBY-UHFFFAOYSA-N silver;hydrate Chemical compound O.[Ag].[Ag] VFWRGKJLLYDFBY-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
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- 239000013589 supplement Substances 0.000 description 1
- 239000000375 suspending agent Substances 0.000 description 1
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- 230000002195 synergetic effect Effects 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Conductive Materials (AREA)
Abstract
Description
玻璃# | PbO | B2O3 | Na2O | Li2O | Bi2O3 | Cr2O3 | TeO2 |
1 | 44.36 | 0.49 | 0 | 0.78 | 6.79 | 0 | 47.58 |
2 | 44.19 | 0.49 | 0.72 | 0.43 | 6.77 | 0 | 47.40 |
3 | 44.42 | 0.49 | 0.40 | 0.24 | 6.80 | 0 | 47.64 |
4 | 44.31 | 0.51 | 0.56 | 0.34 | 6.76 | 0 | 47.53 |
5 | 49.12 | 0.50 | 0.35 | 0.43 | 6.66 | 0 | 42.93 |
6 | 44.44 | 0.51 | 0 | 0.61 | 6.78 | 0 | 47.67 |
7 | 44.25 | 0.50 | 0.46 | 0.56 | 6.75 | 0 | 47.47 |
8 | 44.45 | 0.51 | 0.26 | 0.31 | 6.78 | 0 | 47.68 |
9 | 44.35 | 0.51 | 0.36 | 0.43 | 6.77 | 0 | 47.58 |
10 | 43.69 | 0.52 | 0.46 | 0.44 | 6.91 | 1.13 | 46.86 |
组分 | 重量% |
2,2,4-三甲基-1,3-戊二醇单异丁酸酯 | 48.46% |
乙基纤维素(50-52%乙氧基) | 0.10% |
乙基纤维素(48-50%乙氧基) | 0.05% |
牛脂二胺二油酸盐 | 11.11% |
氢化蓖麻油 | 5.56% |
全氢松香酸(perhydroabietic acid)的季戊四醇四酯 | 6.94% |
己二酸二甲酯 | 25.00% |
戊二酸二甲酯 | 2.78% |
组分 | 重量% |
2,2,4-三甲基-1,3-戊二醇单异丁酸酯 | 39.32% |
乙基纤维素(50-52%乙氧基) | 0.17% |
乙基纤维素(48-50%乙氧基) | 0.03% |
牛脂二胺二油酸盐 | 10.75% |
氢化蓖麻油 | 5.38% |
全氢松香酸(perhydroabietic acid)的季戊四醇四酯 | 6.72% |
己二酸二甲酯 | 33.87% |
戊二酸二甲酯 | 3.76% |
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/598,861 US8969709B2 (en) | 2012-08-30 | 2012-08-30 | Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters |
US13/598,861 | 2012-08-30 |
Publications (2)
Publication Number | Publication Date |
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CN103681949A true CN103681949A (zh) | 2014-03-26 |
CN103681949B CN103681949B (zh) | 2017-08-15 |
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Application Number | Title | Priority Date | Filing Date |
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CN201210472608.5A Active CN103681949B (zh) | 2012-08-30 | 2012-11-20 | 包含铅‑碲基氧化物的导电组合物在具有轻掺杂发射器的半导体装置的制造中的用途 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8969709B2 (zh) |
EP (1) | EP2703368A1 (zh) |
JP (1) | JP6185232B2 (zh) |
KR (1) | KR20140030009A (zh) |
CN (1) | CN103681949B (zh) |
Cited By (5)
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CN104193166A (zh) * | 2014-09-05 | 2014-12-10 | 广东风华高新科技股份有限公司 | 玻璃料及其制备方法 |
CN104692668A (zh) * | 2015-02-11 | 2015-06-10 | 西北大学 | 一种太阳能电池正面电极浆料用快速结晶型玻璃粉 |
CN104795126A (zh) * | 2014-01-17 | 2015-07-22 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 具有改进的粘着性能的铅-铋-碲-硅酸盐无机反应体系 |
CN104715804B (zh) * | 2013-12-17 | 2017-07-28 | 三星Sdi株式会社 | 用于太阳能电池电极的组合物以及使用其制造的电极 |
CN109524482A (zh) * | 2017-09-18 | 2019-03-26 | 江西佳银科技有限公司 | 具有多个离散熔块的厚膜浆料以及用于接触晶体硅太阳能电池发射极表面的方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5188990A (en) * | 1991-11-21 | 1993-02-23 | Vlsi Packaging Materials | Low temperature sealing glass compositions |
CN1873836A (zh) * | 2005-04-14 | 2006-12-06 | E.I.内穆尔杜邦公司 | 制造半导体器件的方法以及用于该方法的导电组合物 |
US20110232746A1 (en) * | 2010-05-04 | 2011-09-29 | E. I. Du Pont De Nemours And Company | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5240884A (en) | 1991-09-05 | 1993-08-31 | Johnson Matthey, Inc. | Silver-glass die attach paste |
JPH0897011A (ja) * | 1994-09-26 | 1996-04-12 | Matsushita Electric Ind Co Ltd | 酸化亜鉛バリスタ用電極材料 |
US7608206B1 (en) | 2008-04-18 | 2009-10-27 | E.I. Dupont De Nemours & Company | Non-lead resistor composition |
WO2010109905A1 (ja) * | 2009-03-27 | 2010-09-30 | 日立粉末冶金株式会社 | ガラス組成物およびそれを用いた導電性ペースト組成物、電極配線部材と電子部品 |
JP5559510B2 (ja) * | 2009-10-28 | 2014-07-23 | 昭栄化学工業株式会社 | 太陽電池素子及びその製造方法 |
TW201133917A (en) | 2010-02-08 | 2011-10-01 | Du Pont | Process for the production of a MWT silicon solar cell |
CN103547542A (zh) | 2011-03-24 | 2014-01-29 | E.I.内穆尔杜邦公司 | 导电糊料组合物及由其制成的半导体器件 |
JP5756447B2 (ja) * | 2012-10-31 | 2015-07-29 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
-
2012
- 2012-08-30 US US13/598,861 patent/US8969709B2/en active Active
- 2012-11-20 CN CN201210472608.5A patent/CN103681949B/zh active Active
- 2012-11-20 JP JP2012254184A patent/JP6185232B2/ja active Active
- 2012-11-20 KR KR1020120131630A patent/KR20140030009A/ko not_active Application Discontinuation
- 2012-12-10 EP EP12196399.5A patent/EP2703368A1/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5188990A (en) * | 1991-11-21 | 1993-02-23 | Vlsi Packaging Materials | Low temperature sealing glass compositions |
CN1873836A (zh) * | 2005-04-14 | 2006-12-06 | E.I.内穆尔杜邦公司 | 制造半导体器件的方法以及用于该方法的导电组合物 |
US20110232746A1 (en) * | 2010-05-04 | 2011-09-29 | E. I. Du Pont De Nemours And Company | Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the manufacture of semiconductor devices |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104715804B (zh) * | 2013-12-17 | 2017-07-28 | 三星Sdi株式会社 | 用于太阳能电池电极的组合物以及使用其制造的电极 |
CN104795126A (zh) * | 2014-01-17 | 2015-07-22 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 具有改进的粘着性能的铅-铋-碲-硅酸盐无机反应体系 |
CN104795126B (zh) * | 2014-01-17 | 2017-07-18 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 具有改进的粘着性能的铅‑铋‑碲‑硅酸盐无机反应体系 |
CN104193166A (zh) * | 2014-09-05 | 2014-12-10 | 广东风华高新科技股份有限公司 | 玻璃料及其制备方法 |
CN104692668A (zh) * | 2015-02-11 | 2015-06-10 | 西北大学 | 一种太阳能电池正面电极浆料用快速结晶型玻璃粉 |
CN109524482A (zh) * | 2017-09-18 | 2019-03-26 | 江西佳银科技有限公司 | 具有多个离散熔块的厚膜浆料以及用于接触晶体硅太阳能电池发射极表面的方法 |
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EP2703368A1 (en) | 2014-03-05 |
CN103681949B (zh) | 2017-08-15 |
US8969709B2 (en) | 2015-03-03 |
JP2014049743A (ja) | 2014-03-17 |
KR20140030009A (ko) | 2014-03-11 |
JP6185232B2 (ja) | 2017-08-23 |
US20140060632A1 (en) | 2014-03-06 |
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