CN103677832A - Method and system for drawing wafer copper film thickness view - Google Patents
Method and system for drawing wafer copper film thickness view Download PDFInfo
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- CN103677832A CN103677832A CN201310683081.5A CN201310683081A CN103677832A CN 103677832 A CN103677832 A CN 103677832A CN 201310683081 A CN201310683081 A CN 201310683081A CN 103677832 A CN103677832 A CN 103677832A
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Abstract
The invention provides a method and system for drawing a wafer copper film thickness view. The method comprises the following steps that measurement data of the wafer copper film thickness are obtained; coordinate distribution of measurement points is determined according to the measurement pattern of the measurement data, and the measurement data are made to correspond to all measurement point coordinates in a one-to-one mode; the wafer copper film thickness view is drawn according to the coordinate distribution of the measurement points and the measurement data. Based on the method for drawing the wafer copper film thickness view, distribution of the multiple measurement points is determined according to the measurement pattern, and the wafer copper film thickness view is drawn according to the coordinate of each measurement point and the copper film thickness of each measurement point; the need of a user for the drawing function is met, the development difficulty level of the drawing function is lowered, and use is convenient and flexible.
Description
Technical field
The present invention relates to chemical Mechanical Polishing Technique field, particularly a kind of drawing practice and system of wafer copper film thickness.
Background technology
Chemically mechanical polishing (Chemical Mechanical Polishing is called for short CMP) technology is one of gordian technique of preparing in integrated circuit manufacture multiple layer of copper interconnection structure.As the most effective overall flattening method at present, CMP technology can effectively be taken into account wafer part and global flatness.At present, CMP technology has developed into take chemical-mechanical polisher as main body, the chemical-mechanical planarization technology that integrates end point determination, off-line measurement, cleaning and the technology such as dry is diameter wafer to great transition more, boost productivity, reduce manufacturing cost and the necessary technology of substrate overall situation planarization.
After CMP technique, utilize off-line measurement subsystem to measure accurately and effectively the residual copper film thickness of crystal column surface.Important component part as off-line measurement control system, wafer copper film thickness drafting system provides easy to operate advanced drawing function for technologist, when guaranteeing that measurement data is by objective expression, make technologist have understanding more intuitively to polish results.This CMP Control System Software adopts Qt exploitation, but Qt is bad at high performance mapping operation, can not meet well the development requirement of off-line measurement subsystem drawing function.Therefore,, for the exploitation of drafting system, need realize by other instruments.
Summary of the invention
Object of the present invention is intended at least solve one of above-mentioned technological deficiency.
For this reason, one aspect of the present invention provides a kind of drawing practice of wafer copper film thickness.
Another aspect of the present invention proposes a kind of drafting system of wafer copper film thickness.
In view of this, embodiments of the invention propose a kind of drawing practice of wafer copper film thickness, comprise the following steps: the measurement data of obtaining wafer copper film thickness; The coordinate of determining K measurement point according to the measurement pattern of described measurement data distributes, and a described measurement data and described K measurement point coordinate is corresponding one by one; And the view of drawing described wafer copper film thickness according to the coordinate of each measurement point and corresponding measurement data.
According to the drawing practice of the embodiment of the present invention, by measurement pattern, determine a plurality of measurement point distributions, and according to the view of the coordinate of each measurement point and its copper film thickness drafting wafer copper film thickness, the method has met user's drawing function demand, reduced the development difficulty of drawing function, simultaneously easy to use and flexible.
In one embodiment of the invention, described measurement pattern comprises XY pattern and global schema, and in described XY pattern, a described K measurement point distribution is in two perpendicular diameter of described wafer, in described global schema, a described K measurement point distribution is in take on the concentric circles that the described wafer center of circle is the center of circle.
In one embodiment of the invention, in described global schema, a described K measurement point distribution is in take on one group of concentric circles that the described wafer center of circle is the center of circle, and the number of turns that described one group of concentric circles is is 6,7,8,9 or 10 s' concentric circles, and its corresponding measurement point sum is respectively 121 points, 169 points, 225 points, and 361 points at 289.
In view of this, embodiments of the invention propose a kind of drafting system of wafer copper film thickness on the other hand, comprise: data capture unit, utilize function load to read the data file of the wafer copper film thickness of appointment, to obtain the measurement data of described data file, wherein, the form of described measurement data file is .txt; Generation unit, generates corresponding measurement point coordinate according to the pattern factor of described measurement data and distributes; And drawing unit, measurement data described in each is corresponding to generate the view of described wafer copper film one by one with corresponding coordinate.
According to the drawing practice of the embodiment of the present invention, by measurement pattern, determine a plurality of measurement points, and according to the view of the coordinate of each measurement point and its copper film thickness drafting wafer copper film thickness, the method has met user's drawing function demand, reduced the development difficulty of drawing function, simultaneously easy to use and flexible.
In one embodiment of the invention, described drafting system compiles generation by Matlab translation and compiling environment, and described drafting system operates in host computer IPC.
In one embodiment of the invention, master control system obtains the measurement data of described wafer copper film thickness by OPC data access mode.
In one embodiment of the invention, the Signal/Slot mechanism of described master control system by Qt is described drafting system calls reserved slit function, to start drawing function.
The aspect that the present invention is additional and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or the additional aspect of the present invention and advantage will become from the following description of the accompanying drawings of embodiments and obviously and easily understand, wherein:
Fig. 1 is the process flow diagram of the drawing practice of wafer copper film thickness according to an embodiment of the invention;
Fig. 2 is 361 point measurement point distribution schematic diagrams according to an embodiment of the invention;
Fig. 3 is the structured flowchart of the drafting system of wafer copper film thickness according to an embodiment of the invention; 6
Fig. 4 is pretreated main contents of data according to an embodiment of the invention; And
Fig. 5 is the schematic diagram of master control system and drafting system call relation according to an embodiment of the invention.
Embodiment
Describe embodiments of the invention below in detail, the example of embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Below by the embodiment being described with reference to the drawings, be exemplary, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " longitudinally ", " laterally ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end ", " interior ", orientation or the position relationship of indications such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " be only for describing object, and can not be interpreted as indication or hint relative importance.
In description of the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be to be also electrically connected to; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term concrete meaning in the present invention.
Fig. 1 is the process flow diagram of the drawing practice of wafer copper film thickness according to an embodiment of the invention.As shown in Figure 1, the drawing practice according to the wafer copper film thickness of the embodiment of the present invention, comprises the following steps: the measurement data of obtaining wafer copper film thickness; The coordinate of determining K measurement point according to the measurement pattern of measurement data distributes, and measurement data and K measurement point coordinate is corresponding one by one; And the view of drawing wafer copper film thickness according to the coordinate of each measurement point and corresponding measurement data.
In one embodiment of the invention, measurement pattern comprises XY pattern and global schema, and in XY pattern, K measurement point distribution is in two perpendicular diameter of wafer, and in global schema, K measurement point distribution is in take on one group of concentric circles that the wafer center of circle is the center of circle.Global schema, according to the difference of measurement point sum, can be further divided into different subpatterns, and specifically, under global schema, K measurement point distributes according to 8 point, is distributed in and take on one group of concentric circles that the wafer center of circle is the center of circle.Desirable 6,7,8,9 or 10 of concentrically ringed numbers, corresponding measurement point sum is respectively 121 points, 169 points, 225 points, and 361 points at 289.As required, concentric circles number and measurement point sum also can suitably increase.The distribution of 361 as shown in Figure 2.
In global schema, measurement point distribution is as shown in table 1.
Table 1
M as shown in table 1
1to m
10represent that respectively the 1st circle is to the 10th measurement point quantity of enclosing on concentric circles.For example, in 121Dian global schema, it is 1 that the measurement of the 1st circle (being the center of circle) is counted.The 2nd circle is measured and counted is 8 ..., the 6th circle is measured and counted is 40.Each measurement point is evenly distributed on every circle circumference, and the central angle number of degrees of two adjacent measurement points on i circle circumference are
wherein, m
ibe the measurement point quantity distributing on i circle circumference.Adjacent two concentrically ringed semidiameters are definite value
wherein R is wafer radius, and d is that outmost turns is apart from the radical length of crystal round fringes.In example of the present invention, the concentric circles number of turns is 10 to the maximum.There is following relation in measurement point sum and the number of turns,
wherein, num is measurement point sum, and n is concentric circles number.
The coordinate of determining K measurement point according to the measurement pattern of measurement data distributes, and measurement data and K measurement point coordinate is corresponding one by one.According to measurement point coordinate, distribute and the view of corresponding measurement data drafting wafer copper film thickness.
The drafting system of a kind of wafer copper film thickness that the embodiment of the present invention proposes runs in host computer IPC, by Matlab translation and compiling environment, generated, for program that can independent operating, and can pass through master control system routine call, greatly reduce the difficulty of exploitation control system advanced drawing function.
Drafting system of the present invention and measurand are irrelevant, as long as the basic demand that the data content that master control system program provides and form meet drafting system of the present invention, native system all can be drawn out corresponding figure.
Matlab is the computer aided design software of a brilliance.It,, with powerful calculating and drawing function, reliable and stable algorithms library and succinct programming language efficiently, is widely used in all many-sides.Yet as a kind of high-level [computer with interpretive mode operation, Matlab is Shortcomings part also, as Matlab for the processing of circular treatment and graphical interfaces the language less than other, can not depart from its translation and compiling environment operation and execution efficiency low.Therefore,, by maximizing favourable factors and minimizing unfavourable ones, the present invention has realized the exploitation of drafting system simply and easily.
The compiler of Matlab adopts the mode of pseudo-compiling, and the program of writing in Matlab cannot depart from its working environment and independent operating.For this problem, MathWorks company provides application programming interfaces for Matlab.
Generally, call Matlab and be and utilize the engine function of Matlab to realize, user's application program is calculated Matlab or engine that figure shows calls as one.Cannot running without Matlab environment but call Matlab engine, institute is in this way inadvisable.And for the good real-time of retentive control system, should avoid plotter program to be directly added in master control system program.Therefore, consideration for security of system and flexible operation, the present invention makes full use of the graphic capability that Matlab is powerful, and under Matlab translation and compiling environment, successfully drafting system is developed as to the subroutine of independent operating, during program operation, can not take the progress of work of master control system program, and can conveniently be called by master control system program, when meeting functional requirement, guarantee the reliability service of control system, there is positive meaning.
During compiling, first configure Matlab Compiler.At Matlab command window, input: mbuild – setup, according to prompting, selects suitable compiler.The Lcc compiler that the present invention selects Matlab to carry.Configure after compiler, source m file is compiled.Syntax format is mcc – m fun1, and wherein fun1 is the m filename being compiled, and is also the last program name generating, and fun1 of the present invention is plot.Finally, only MCRinstaller.exe need be installed on object computer.
According to the drawing practice of the embodiment of the present invention, by measurement pattern, determine a plurality of measurement point distributions, and according to the view of the coordinate of each measurement point and its copper film thickness drafting wafer copper film thickness, the method has met user's drawing function demand, reduced the development difficulty of drawing function, simultaneously easy to use and flexible.
Fig. 3 is the structured flowchart of the drafting system of wafer copper film thickness according to an embodiment of the invention.As shown in Figure 3, the drafting system of wafer copper film thickness comprises according to an embodiment of the invention: data capture unit 100, generation unit 200 and drawing unit 300.
Particularly, data capture unit 100 utilizes function load to read the data file of the wafer copper film thickness of appointment, and to obtain the measurement data of data file, wherein, the form of measurement data file is .txt.Generation unit 200 generates corresponding measurement point coordinate according to the pattern factor of measurement data and distributes.Drawing unit 300 is corresponding to generate the view of wafer copper film one by one with corresponding coordinate by each measurement data.
In one embodiment of the invention, master control system obtains the measurement data of wafer copper film thickness by OPC data access mode.The Signal/Slot mechanism of master control system by Qt is drafting system calls reserved slit function, to start drawing function.Drafting system compiles generation by Matlab translation and compiling environment, and drafting system operates in host computer IPC.
In one embodiment of the invention, data capture unit 100 utilizes function load to read the data file of the wafer copper film thickness of appointment, obtains whole measurement data, and wherein, the form of data file is .txt.Generation unit 200 generates corresponding measurement point coordinate according to pattern factor and distributes; wherein; coordinate distributes and adopts rectangular coordinate form, can utilize polar coordinates to calculate corresponding rectangular coordinate and distribute, code example x=r*cos (angle) while drawing wafer copper film thickness three-dimension curved surface; Y=r*sin (angle), wherein, angle represents polar angle, and r represents utmost point footpath, and x and y are corresponding x axle and the rectangular coordinate of y axle.Drawing unit 300 is corresponding one by one with each coordinate points by each measurement data, generates required view, wherein, while drawing wafer copper film thickness three-dimension curved surface, first utilize function griddata to complete interpolation calculation, its stepping angle is 0.02rad, then generates corresponding three-dimensional colored graph by function surf.
Wherein, the exploitation Qt of master control system program realizes.As a multi-platform C++ graphical user interface application program frame, Qt can offer application developer with efficient development ability by the good development environment of Visual Studio and set up the required repertoire of high level graphic user interface, and allows component programming veritably.Therefore, native system adopts Qt OpenSource to realize the exploitation of program, and utilizes Qt Designer to complete the GUI Design of control system.After each measuring process finishes, master control system program utilizes OPC data access mode initiatively to read all data in bottom memory block, with regulation form and filename measurement result is saved in to the position of system appointment, for example D: measurement thickness data.txt.Before file is preserved, master control system program is as the preprocessor of data, complete whole early-stage preparations of data, main contents comprise (as shown in Figure 4): the measurement pattern deterministic model factor that (1) is set according to technologist, in the present invention, measurement pattern can be divided into global schema or XY pattern, for global schema, also can continue to be divided into different subpatterns according to measurement point sum.(2) data reordering.Wherein, data reordering carries out according to the genesis sequence of coordinate points.As the preprocessor of data, master control system program completes after above work, the complicated numerical evaluation that just image output and the image of data can be processed, and drawing function, gives drafting system and completes.Master control system program is responsible for calling of drafting system, need to start drawing function (as shown in Figure 5) according to user.
Signal/Slot mechanism based on Qt, calling that master control system program is drafting system designs corresponding control, for example order button, and reserved slit function.In groove function, first utilize the storing path of the function setCurrent definition plotter program of QDir class, then utilize the function startDetached of QProcess class (process object) to start drawing function.When user needs drawing image, click the order button of user interface.Order button control sends signal, automatically moves the groove function of appointment, force start drawing function.Example code is as follows:
QDir?path;
path.setCurrent("D:/Measurement/plot");
process->startDetached("plot.exe");
In addition,, due to can execution subroutine being generated by Matlab compiling of drafting system, so can attach the little function of many practicalities, for example curved surface rotation, two-dimensional projection, zoom in/out and read each difference point, can make the mode of data analysis more flexible.
According to the system of the embodiment of the present invention, by reading specific data file, obtain the wafer copper film thickness of each measurement point, and according to the view of the position coordinates drafting wafer copper film thickness of wafer copper film thickness and measurement point, met user's drawing function demand, reduced the development difficulty of drawing function, simultaneously easy to use and flexible.
Although illustrated and described embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change above-described embodiment within the scope of the invention in the situation that not departing from principle of the present invention and aim, modification, replacement and modification.
Claims (7)
1. a drawing practice for wafer copper film thickness, is characterized in that, comprises the following steps:
Obtain the measurement data of wafer copper film thickness;
The coordinate of determining K measurement point according to the measurement pattern of described measurement data distributes, and a described measurement data and described K measurement point coordinate is corresponding one by one;
According to measurement point coordinate, distribute and corresponding measurement data is drawn the view of described wafer copper film thickness.
2. the drawing practice of wafer copper film thickness as claimed in claim 1, it is characterized in that, described measurement pattern comprises XY pattern and global schema, in described XY pattern, a described K measurement point distribution is in two perpendicular diameter of described wafer, in described global schema, a described K measurement point distribution is in take on the concentric circles that the described wafer center of circle is the center of circle.
3. the drawing practice of wafer copper film thickness as claimed in claim 1, it is characterized in that, in described global schema, a described K measurement point distribution is in take on one group of concentric circles that the described wafer center of circle is the center of circle, and the number of turns that described one group of concentric circles is is 6,7,8,9 or 10 s' concentric circles, and its corresponding measurement point sum is respectively 121 points, 169 points, 225 points, and 361 points at 289.
4. a drafting system for wafer copper film thickness, is characterized in that, comprising:
Data capture unit, utilizes function load to read the data file of the wafer copper film thickness of appointment, and to obtain the measurement data in described data file, wherein, the form of described measurement data file is .txt;
Generation unit, generates corresponding measurement point coordinate according to the pattern factor of described measurement data and distributes; And
Drawing unit is corresponding to generate the view of described wafer copper film one by one with corresponding coordinate by measurement data described in each.
5. the drafting system of a kind of wafer copper film thickness as claimed in claim 4, is characterized in that, described drafting system compiles generation by Matlab translation and compiling environment, and described drafting system operates in host computer IPC.
6. the drafting system of a kind of wafer copper film thickness as claimed in claim 4, is characterized in that, master control system obtains the described measurement data of described wafer copper film thickness by OPC data access mode.
7. the drafting system of a kind of wafer copper film thickness as claimed in claim 5, is characterized in that, the Signal/Slot mechanism of described master control system by Qt is described drafting system calls reserved slit function, to start drawing function.
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| CN106625244A (en) * | 2016-09-29 | 2017-05-10 | 天津华海清科机电科技有限公司 | Real-time locating method and system for copper CMP online measuring point |
| CN107243826A (en) * | 2017-07-06 | 2017-10-13 | 天津华海清科机电科技有限公司 | The method for adjusting wafer film thickness uniformity after CMP |
| CN116156779A (en) * | 2023-04-20 | 2023-05-23 | 圆周率半导体(南通)有限公司 | Method for improving copper thickness uniformity of PCB |
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| CN116156779B (en) * | 2023-04-20 | 2023-07-07 | 圆周率半导体(南通)有限公司 | Method for improving copper thickness uniformity of PCB |
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Application publication date: 20140326 |