CN103676356A - 显示装置 - Google Patents

显示装置 Download PDF

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CN103676356A
CN103676356A CN201310673600.XA CN201310673600A CN103676356A CN 103676356 A CN103676356 A CN 103676356A CN 201310673600 A CN201310673600 A CN 201310673600A CN 103676356 A CN103676356 A CN 103676356A
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electrode layer
substrate
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display device
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CN103676356B (zh
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崔贤植
金熙哲
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BOE Technology Group Co Ltd
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Priority to PCT/CN2014/076233 priority patent/WO2015085698A1/zh
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract

本发明实施例公开了一种显示装置，涉及显示领域，能够实现低频（低驻波）驱动，并且不会因此导致开口率减少。本发明提供的显示装置，包括：相互对盒的第一基板和第二基板，所述第一基板包括：第一电极层，所述第二基板包括：第二电极层，所述第一基板还包括：第三电极层，设置在所述第一电极层的远离所述第二基板的一侧，且，所述第三电极层与所述第一电极层之间夹设有绝缘层；所述第三电极层与所述第二电极层电连接。本发明显示装置适用于低频驱动。

Description

显示装置
技术领域
本发明涉及显示领域，尤其涉及一种显示装置。
背景技术
一般而言，显示装置采用高频驱动（60Hz，120Hz等）时，大的存储电容Cst会影响充电率，所以Cst需要设计成较小值；但是采用低频驱动（30Hz以下，一般为10Hz，5Hz驱动）时，电压保持率(voltage holding ratio，VHR)依赖Cst的大小，如果Cst过小VHR不能维持正常值，所以低频驱动时需要较大的Cst。举例而言，如果将60Hz驱动时像素的Cst设为1，那么采用6Hz（即驱动频率变为原来的1/10）的低频驱动时大概需要将近10倍的Cst。所以，如果将高频驱动的显示装置换成低频驱动，会导致VHR降低，故为了适应高频或低频驱动，一般针对不同驱动频度，分别对像素进行设计。具体来说，高频驱动时为了使充电率符合设计要求，设计小的像素电极以减少Cst；而低频驱动时，将像素电极设计成大的以确保更大的Cst，但缺点是，高频驱动时像素电极小，开口率也会相应减小。
一种新型ADS模式显示装置的结构如图1所示，由彩膜基板10和ADS阵列基板20对盒而成，彩膜基板10包括：基板11，设置在基板11上的彩膜层和公共电极13；ADS阵列基板20包括：基板21，设置在基板21上的像素电极22，像素电极22为狭缝电极，公共电极13为板式电极。图1所示新型ADS模式因Cst比较小，高频驱动时在充电率设计方面具有优势，但是同时也因Cst比较小，并不适合低频驱动。
其中，上面所述的ADS（Advanced-Super Dimensional Switching）模式，指高级超维场开关模式，简称ADS，其原理是：通过同一平面内像素电极或公共电极边缘所产生的平行电场以及像素电极与公共电极间产生的纵向电场形成多维电场，使液晶盒内取向液晶分子都能够产生旋转转换，从而提高平面取向系液晶工作效率并增大透光效率。
发明内容
本发明的实施例提供一种显示装置，能够实现低频（低驻波）驱动，而且不会因此导致开口率减少。
为达到上述目的，本发明的实施例采用如下技术方案：
一方面，本发明的实施例提供一种显示装置，包括：相互对盒的第一基板和第二基板，所述第一基板包括：第一电极层，所述第二基板包括：第二电极层，所述第一基板还包括：第三电极层，设置在所述第一电极层的远离所述第二基板的一侧，且，所述第三电极层与所述第一电极层之间夹设有绝缘层；所述第三电极层与所述第二电极层电连接。
优选地，所述第一基板为彩膜基板，所述绝缘层为彩膜层。
具体地，所述彩膜层包括：黑矩阵，以及由所述黑矩阵隔开的色阻块。
优选地，所述显示装置还包括具有导电性的隔垫物，所述第三电极层通过所述隔垫物与所述第二电极层电连接。
可选地，所述第一基板设置有贯穿所述第一电极层及所述绝缘层的过孔，所述隔垫物穿过所述过孔连接到所述第三电极层。
可选地，所述第二电极层设置有狭缝电极。
可选地，所述第二电极层为像素电极层，所述狭缝电极为像素电极。
可选地，所述第二基板上还设置有：与所述像素电极相连的薄膜晶体管；
所述第一电极层通过所述隔垫物与所述薄膜晶体管的漏极相连。
可选地，所述第一电极层、所述第二电极层和所述第二电极层均为透明导电膜。
所述第一电极层、所述第二电极层和所述第三电极层的总厚度小于1000埃。
现有显示装置中，用于产生驱动电场的第一、第二电极层分别位于彩膜、阵列极板上，距离较远，Cst比较小，适合高频驱动；而本发明实施例提供的显示装置，在第一基板上设置有隔着绝缘层的有第一电极层和第三电极层；并且，将远离第二基板的第三电极层还与第二基板上的第二电极层电连接，这样，第二基板上的第二电极层与第一电极层形成第一电容C1st，第一电极层与第三电极层形成第二电容C2st，显示装置的存储电容Cst实际为C1st+C2st。因此，与现有技术相比，本实施例提供的显示装置存储电容大，适合低频驱动。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为现有的ADS模式显示装置的结构示意图；
图2为本发明实施例提供的显示装置的结构示意图一；
图3为本发明实施例提供的显示装置的结构示意图二。
附图标记
10-彩膜基板，11-基板，12-彩膜层，13-公共电极，20-阵列基板，
21-基板，22-像素电极；
30-第一基板，32-第一电极层，33-第三电极层，34-绝缘层，
35-过孔，40-第二基板，42-第二电极层，44-漏极过孔，
50-隔垫物。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。
为了便于清楚说明，在本发明中采用了第一、第二等字样对相似项进行类别区分，该第一、第二字样并不在数量上对本发明进行限制，本领域技术人员根据本发明公开的内容，想到的显而易见的相似变形或相关扩展均属于本发明的保护范围内。
实施例
本发明实施例提供一种显示装置，如图2所示，该显示装置包括：相互对盒的第一基板30和第二基板40，第一基板30包括：第一电极层32，第二基板40包括：第二电极层42；所述第一基板30还包括：第三电极层33，设置在第一电极层32的远离第二基板40的一侧(即第一电极层32的上方)，且，第三电极层33与第一电极层32之间夹设有绝缘层34；第三电极层33与第二电极层42电连接。
现有显示装置中，用于产生驱动电场的第一、第二电极层分别位于彩膜、阵列极板上，距离较远，Cst比较小，适合高频驱动；而本发明实施例提供的显示装置，在第一基板30上设置有隔着绝缘层34的第一电极层32和第三电极层33；并且，将远离第二基板40的第三电极层33还与第二电极层42电连接，这样，第二基板40上的第二电极层42与第一电极层32形成第一电容C1st，第一电极层32与第三电极层33形成第二电容C2st，显示装置的存储电容Cst实际为C1st+C2st。因此，与现有技术相比，本实施例提供的显示装置存储电容大，适合低频驱动。
其中优选地，本实施例第一基板30为彩膜基板，绝缘层34为彩膜层。如图2所示，在本实施例的第一种具体实施方式中，彩膜层设置在第一电极层32和第三电极层33之间，作为绝缘层使第一电极层32和第三电极层33隔开；当然，也可以分别单独设置彩膜层和绝缘层，例如，第一电极层32、绝缘层和第三电极层33依次设置构成三明治式夹层结构，彩膜层2位于夹层结构之上或者之下。
所述的彩膜层一般可具体包括：黑矩阵，以及由黑矩阵隔开的色阻块。对于常见的RGB（红/绿/蓝）混色方案，一个像素区域一般包括R/G/B（红/绿/蓝）三个色阻块。除常见的RGB（红/绿/蓝）混色方案之外，本发明技术方案还可用于其它混色方案，例如RGBY（红/绿/蓝/黄）、RGBW（红/绿/蓝/白）混色方案。
需要进一步详细说明的是，在本实施例的第一种具体实施方式中，第一基板30上的第一电极层32为公共电极层，设置有板式的公共电极；第二基板40为阵列基板，第二基板40上的第二电极层42与第一基板30上的第三电极层33电连接，二者均为像素电极层，其中，第二电极层42设置有狭缝状的像素电极，第三电极层33设置有板式的像素电极。
本实施例对彩膜基板的结构进行了改进，在彩膜层+透明导电膜的结构中再多形成一层透明导电膜，并且将新增透明导电膜（即第三电极层）与阵列基板的像素电极层电连接，从而使显示装置的存储电容增大，适合低频驱动。
本发明实施例对第三电极层33与第二电极层42相连接的实现方式不做限定，可以是本领域技术人员所熟知的任意实现方式。但优选地，本实施例可将第三电极层33通过具有导电性的隔垫物与第二电极层42相连，所述隔垫物设置在第一基板30与第二基板40之间，用于维持第一基板30和第二基板40的间距。
如图3所示，为本实施例的第二种具体实施方式，第一基板30设置有贯穿第一电极层32及绝缘层34（如彩膜层）的过孔35，隔垫物50的一端穿过过孔35连接到第三电极层33；第二基板40上设置有与像素电极（第二电极层42为像素电极层）相连的薄膜晶体管，在薄膜晶体管的漏极上方设置漏极过孔44，隔垫物50的另一端穿过漏极过孔44与薄膜晶体管的漏极相连。所述隔垫物50具有导电性，从而将第三电极层33与像素电极连接在一起，第二基板上的像素电极与第三电极层33形成第一电容C1st，第一电极层32与第三电极层33形成第二电容C2st，第一电容C1st与第二电容C2st并连，共同形成存储电容C1st+C2st，因此，本实施例所述显示装置的存储电容增大为C1st+C2st，适合低频驱动。
其中，所述第一电极层32、第二电极层42和第三电极层33均为透明导电膜，常见的透明导电膜的材料有：氧化铟锡(indium tin oxide，ITO)、氧化锌（ZnO)、氧化锡(SnO2)、氧化锌掺铝（AZO）和FTO（氧化锡掺氟）。
此外，因显示区域电极层的总厚度越薄透射率越好，现有技术中只存在两层电极层，而本发明实施例在第一基板上额外增加了第三电极层，因此，需要通过减小各电极层的厚度，才可使显示装置整体的透射率不会因额外增加的第三电极层而降低。
一般而言，现有技术形成板式电极时电极层的厚度一般约400埃，形成狭缝电极时电极层的厚度一般约600埃。因此，本实施例第一电极层、第二电极层和第三电极层的总厚度小于1000埃，一般即可保证显示装置整体的透射率不降低。
综上所述，本发明实施例所述显示装置存储电容大，适合低频驱动；同时还可避免存储电容增大导致的开口率减少。所述的显示装置可以为：液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
所述显示装置制备方法与现有技术大致相同，包括：第一基板制程；第二基板制程；以及，第一基板与第二基板对盒制程，只是所述第一基板制程增加一形成透明导电膜的工序，具体如下，包括：
步骤一、在基板形成第三电极层；
步骤二、在设置有所述第三电极层的基板上，形成绝缘层；
步骤三、在设置有所述第三电极层和绝缘层的基板上，形成第一电极层，并通过构图工艺形成过孔，所述过孔贯穿所述第一电极层及绝缘层。
本实施例所述第一基板制程，在彩膜层+透明导电膜的结构中再多形成一层透明导电膜，并且利用导电性隔垫物将新增透明导电膜（即第三电极层）与第二基板的第二电极层相连接。与现有的设计理念不同，本实施例从设计初开始重点放在低频驱动上，既没有开口率的减少，也能实现低频驱动。
需要说明的是，在不冲突的前提下，本发明实施例中的各项技术特征可以任意组合使用。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。

Claims (10)

1.一种显示装置，包括：相互对盒的第一基板和第二基板，所述第一基板包括：第一电极层，所述第二基板包括：第二电极层，其特征在于，所述第一基板还包括：
第三电极层，设置在所述第一电极层的远离所述第二基板的一侧，且，所述第三电极层与所述第一电极层之间夹设有绝缘层；
所述第三电极层与所述第二电极层电连接。
2.根据权利要求1所述的显示装置，其特征在于，所述第一基板为彩膜基板，所述绝缘层为彩膜层。
3.根据权利要求2所述的显示装置，其特征在于，所述彩膜层包括：黑矩阵，以及由所述黑矩阵隔开的色阻块。
4.根据权利要求1所述的显示装置，其特征在于，
还包括具有导电性的隔垫物，所述第三电极层通过所述隔垫物与所述第二电极层电连接。
5.根据权利要求4所述的显示装置，其特征在于，
所述第一基板设置有贯穿所述第一电极层及所述绝缘层的过孔，所述隔垫物穿过所述过孔连接到所述第三电极层。
6.根据权利要求1-5任一项所述的显示装置，其特征在于，
所述第二电极层设置有狭缝电极。
7.根据权利要求6所述的显示装置，其特征在于，
所述第二电极层为像素电极层，所述狭缝电极为像素电极。
8.根据权利要求7所述的显示装置，其特征在于，所述第二基板上还设置有：与所述像素电极相连的薄膜晶体管；
所述第一电极层通过所述隔垫物与所述薄膜晶体管的漏极相连。
9.根据权利要求1所述的显示装置，其特征在于，
所述第一电极层、所述第二电极层和所述第三电极层均为透明导电膜。
10.根据权利要求1所述的显示装置，其特征在于，
所述第一电极层、所述第二电极层和所述第三电极层的总厚度小于1000埃。
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