CN103675724A - Device for improving magnetic hysteresis of giant magneto-impedance sensor through electric field and improving method thereof - Google Patents
Device for improving magnetic hysteresis of giant magneto-impedance sensor through electric field and improving method thereof Download PDFInfo
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Abstract
The invention discloses a device for improving the magnetic hysteresis of a giant magneto-impedance sensor through an electric field. The device comprises: a giant magneto-impedance sensitive material which is used to measure variable impedance signal data under external magnetic field variation in the working state; a driving power source which is connected with two ends of the giant magneto-impedance sensitive material to make the giant magneto-impedance sensitive material in alternating-current magnetization and working; a metal housing, wherein the giant magneto-impedance sensitive material is surrounded by the metal housing; and an auxiliary power source which is connected with the metal housing for generating the electric field between the giant magneto-impedance sensitive material and the metal housing. According to the invention, under the action of the electric field, the magnetic hysteresis phenomenon of the sensor can be significantly restrained, so the accuracy of the sensor can be improved. The invention further provides an improving method of the device for improving the magnetic hysteresis of the giant magneto-impedance sensor through the electric field.
Description
Technical field
The present invention relates to optimize magnetic sensor performance field, be specifically related to a kind of device and improvement method thereof of utilizing electric field to improve giant magnetic impedance sensor magnetic hysteresis.
Background technology
In prior art, by driving power, produce and exchange driving magnetic field, be applied to the two ends of giant magnetic impedance (GMI) sensitive material, make GMI sensitive material magnetic saturation.GMI material is placed in to external magnetic field, the parallel material of external magnetic field and betal can long axis direction, the impedance change signal being caused by external magnetic field variation is at GMI sensitive material two ends, and sensing acquisition device directly records.
When magnetic field saturatedly changes to impedance curve (increase) when just saturated and when magnetic field there are differences from the just saturated impedance curve (decrease) changing to when negative saturated, this species diversity is to have magnetic hysteresis because of material from negative.As everyone knows, so long as just there is hysteresis in magnetic material, GMI sensor uses the material (magnetic permeability is up to hundreds of thousands, and coercive force is little of several A/m) of the low magnetic hysteresis of high magnetic permeability, and its nonuniformity being caused by magnetic hysteresis is in general well below other sensors.But exactly, because of its high resolution, small inconsistency also can impact the precision of sensor.Therefore, how research overcomes this inconsistency being caused by magnetic hysteresis and just seems highly significant.
Summary of the invention
The present invention has overcome the above-mentioned deficiency in background technology, proposes a kind of device and improvement method thereof of utilizing electric field to improve giant magnetic impedance sensor magnetic hysteresis.The present invention applies driving signal at the giant magnetic impedance sensitive material two ends of giant magnetic impedance sensor, measures the variation that external magnetic field changes lower impedance signal.Outside giant magnetic impedance sensitive material, a betal can has been installed, on betal can, applied a stable electromotive force, and then produced electric field between shell and giant magnetic impedance sensitive material.Under the effect of this electric field, the hysteresis of sensor has obviously been suppressed, and has improved the precision of sensor.
The present invention proposes a kind of device that utilizes electric field to improve giant magnetic impedance sensor magnetic hysteresis, comprising:
Giant magnetic impedance sensitive material, it is the lower lower impedance signal data changing of external magnetic field variation of measuring in working order;
Driving power, it is connected with the two ends of described giant magnetic impedance sensitive material, makes described giant magnetic impedance sensitive material ac magnetization work;
Betal can, it is enclosed in the periphery of described giant magnetic impedance sensitive material;
Accessory power supply, it is connected with described betal can, for produce electric field between described giant magnetic impedance sensitive material and described betal can.
Wherein, further comprise sensing acquisition device, it is connected with the two ends of described giant magnetic impedance sensitive material, measures the impedance signal data of described giant magnetic impedance sensitive material.
Wherein, the material of described giant magnetic impedance sensitive material is under externally-applied magnetic field changes, and AC impedance changes the metal that is greater than 1%.
Wherein, the material of described betal can is not have a metal of magnetic.
Wherein, further comprise that described metal level is the encirclement structure that is deposited on the metal on described giant magnetic impedance sensitive material surface.
Wherein, between described betal can and described giant magnetic impedance sensitive material, be provided with insulation course.
The invention allows for a kind of improvement method of utilizing electric field to improve the device of giant magnetic impedance sensor magnetic hysteresis, comprising:
Step 1: described in gating, driving power produces and exchanges the two ends that driving magnetic field is applied to described giant magnetic impedance sensitive material, magnetizes described giant magnetic impedance sensitive material;
Step 2: described in gating, accessory power supply is powered to described betal can produces stable electromotive force on described betal can;
Step 3: produce radial distribution electric field between described giant magnetic impedance sensitive material and the electromotive force of described betal can, suppress hysteresis.
Wherein, further comprise step 4: described giant magnetic impedance sensitive material and betal can are placed in to external magnetic field, and described sensing acquisition device is measured the impedance signal data that described giant magnetic impedance sensitive material two ends change.
Wherein, described driving power makes described giant magnetic impedance sensitive material magnetic saturation.
Wherein, the magnetic induction line direction of described external magnetic field is parallel to the long axis direction of described giant magnetic impedance sensitive material and betal can.
The present invention has installed the betal can that produces with it radial distribution electric field outward at giant magnetic impedance sensitive material, this electric field has produced impact to the magnetic history of material, has improved the magnetic hysteresis problem that material exists.
The present invention is simple in structure, easy for installation, has improved greatly the measuring accuracy of sensor.
Accompanying drawing explanation
Fig. 1 is that the present invention utilizes electric field to improve the schematic diagram of the device of giant magnetic impedance sensor magnetic hysteresis.
Fig. 2 is the process flow diagram that the present invention improves method.
Fig. 3 be external magnetic field when 21MHz impedance ratio signal with the oscillogram of the variation in magnetic field.
Fig. 4 be high impedance than signal the oscillogram with the variation of frequency.
Embodiment
In conjunction with following specific embodiments and the drawings, the present invention is described in further detail.Implement process of the present invention, condition, experimental technique etc., except the content of mentioning specially below, be universal knowledege and the common practise of this area, the present invention is not particularly limited content.
1-giant magnetic impedance sensitive material, 2-driving power, 3-betal can, 4-accessory power supply, 5-sensing acquisition device.
The device that utilizes electric field to improve giant magnetic impedance sensor magnetic hysteresis of the present invention, comprising:
Giant magnetic impedance sensitive material 1, it is the lower lower impedance signal data changing of external magnetic field variation of measuring in working order;
Betal can 3, it is enclosed in the periphery of giant magnetic impedance sensitive material 1;
The present invention further comprises sensor collector 5, and it is connected with the two ends of giant magnetic impedance sensitive material 1, measures the impedance signal data of giant magnetic impedance sensitive material 1.
Wherein, the material of giant magnetic impedance sensitive material 1 is under externally-applied magnetic field changes, and AC impedance changes the metal that is greater than 1%.
In the present invention, the material of betal can 3 is not have a metal of magnetic.Metal level 3 can also be the encirclement structure that is deposited on the metal on giant magnetic impedance sensitive material 1 surface.Between betal can 3 and giant magnetic impedance sensitive material 1, be provided with insulation course.
As shown in Figure 1, formation of the present invention comprises giant magnetic impedance (GMI) sensitive material 1, driving power 2, betal can 3, accessory power supply 4, sensing acquisition device 5.Driving power 2, produces and exchanges driving magnetic field, is applied to the two ends of giant magnetic impedance sensitive material 1, makes giant magnetic impedance sensitive material 1 magnetic saturation.Under driving under the AC signal that giant magnetic impedance sensitive material 1 produces at driving power 2, external magnetic field is responded to.The shape of giant magnetic impedance sensitive material 1 includes but not limited to silk, film, block, strip, powder etc.Betal can 3 is used for giant magnetic impedance sensitive material 1 to place center position within it, accessory power supply 4 is connected with betal can 3, accessory power supply 4 produces a stable electromotive force on betal can 3, the electric field that generation is worked to giant magnetic impedance sensitive material 1 magnetic history, this electric field plays the effect that reduces magnetic hysteresis.By external magnetic field, change and cause that the impedance signal data of variation is present in the two ends of giant magnetic impedance sensitive material 1, by sensing acquisition device 5, gather and obtain.
The improvement method of utilizing electric field to improve the device of giant magnetic impedance sensor magnetic hysteresis of the present invention, as shown in Figure 2, comprising:
Step 1: gating driving power 2 produces and exchanges the two ends that driving magnetic field is applied to giant magnetic impedance sensitive material 1, magnetization giant magnetic impedance sensitive material 1, until giant magnetic impedance sensitive material 1 magnetic saturation;
Step 2: gating accessory power supply 4, to betal can 3 power supplies, produces stable electromotive force on betal can 3;
Step 3: produce radial distribution electric field between giant magnetic impedance sensitive material 1 and the electromotive force of betal can 3, suppress hysteresis.
Improvement method of the present invention further comprises step 4: giant magnetic impedance sensitive material 1 and betal can 3 are placed in to external magnetic field, and sensing acquisition device 5 is measured the impedance signal data that giant magnetic impedance sensitive material 1 two ends change.The magnetic induction line direction of external magnetic field is parallel to the long axis direction of giant magnetic impedance sensitive material 1 and betal can 3.
In the present embodiment, driving power 2 produces and exchanges the two ends that driving magnetic field is applied to giant magnetic impedance sensitive material 1, makes giant magnetic impedance sensitive material magnetic saturation.At giant magnetic impedance sensitive material 1 overcoat last layer betal can 3.Betal can 3 is connected with accessory power supply 4, produces a stable electromotive force on betal can 3, and then produces the electric field that giant magnetic impedance sensitive material 1 magnetic history is worked.Giant magnetic impedance sensitive material 1 and betal can 3 are placed in external magnetic field, the magnetic induction line of external magnetic field parallel with giant magnetic impedance sensitive material 1 and betal can 3 long axis directions.The variation of the impedance signal data being caused by external magnetic field variation is present in the two ends of giant magnetic impedance sensitive material 1, by sensing acquisition device 5, is directly recorded.
In the present embodiment, by the contrast that application the present invention is improved to the impedance signal data of method front and back, further illustrate the present invention and utilize electric field to improve the device of giant magnetic impedance sensor magnetic hysteresis and the effect of improvement method thereof.
Magnetoimpedance represents with following formula than the definition of (MI ratio):
In formula, Z (H
ex) be measured resistance value under unexpected magnetic field in office, Z (H
max) resistance value while being maximum external magnetic field.
Externally-applied magnetic field in the present embodiment is parallel to the long axis direction of giant magnetic impedance sensitive material 1, and external magnetic field is provided by one group of helmholtz coil, and size is positive and negative 730e.In the present embodiment, defining external magnetic field, from negative 730e, to change to positive 730e be forward, being labeled as "+" changes, it is negative sense that external magnetic field changes to negative 730e from positive 730e, is labeled as "-" and changes, and in measuring process, the change direction of external magnetic field is that forward and negative sense switch back and forth.
First without betal can 3 in the situation that, (adopting prior art) measures, and then on giant magnetic impedance sensitive material 1, puts on betal can 3 and adds that voltage (adopt the inventive method, direct current boosting voltage is 10V) repeats this measurement.
The impedance ratio curve of choosing 21MHz in the present embodiment is studied and is applied to the voltage of betal can 3 for the impact of hysteresis effect.As shown in Figure 3, Fig. 3 shows while being 21MHz impedance signal is with the curve of changes of magnetic field.In Fig. 3, nc representative does not have betal can, 10V to represent that betal can 3 connects 10V voltage; "+" represents external magnetic field positive change, and "-" represents that external magnetic field negative sense changes.Measurement result, as Fig. 3, is having betal can 3 to apply after voltage, and in the change procedure of material outside magnetic field forward and negative sense, the difference of impedance signal reduces as shown in Figure 3.
By investigating the measurement result of different frequency, as shown in Figure 4, from spectrogram, can find out on the one hand, no matter whether add direct current boosting voltage and betal can 3, between the peak signal that forward external magnetic field changes and negative sense external magnetic field changes, all exist difference (can think what magnetic hysteresis caused), this difference becomes greatly and gradually large with the change of frequency.On the other hand, set up betal can 3 and direct current boosting voltage on giant magnetic impedance sensitive material 1 after, the peak signal that forward external magnetic field changes is compared and has been occurred to move with making alive not, and the difference between positive and negative variation diminishes, thereby reduced the hysteresis of sensor, improved its precision.
For the present invention, its working method is the magnetic history that is used for affecting material by electric field.The present invention resists eddy current loss by additional electric field.With regard to the angle of energy, the voltage being added on betal can 3 has equaled to provide an extra energy source, and this energy and driving-energy interact, and have compensated material part energy loss at work.
Protection content of the present invention is not limited to above embodiment.Do not deviating under the spirit and scope of inventive concept, those skilled in the art can to variation and advantage be all included in the present invention, and take appending claims as protection domain.
Claims (10)
1. utilize electric field to improve a device for giant magnetic impedance sensor magnetic hysteresis, it is characterized in that, comprising:
Giant magnetic impedance sensitive material (1), it is the lower lower impedance signal data changing of external magnetic field variation of measuring in working order;
Driving power (2), it is connected with the two ends of described giant magnetic impedance sensitive material (1), makes described giant magnetic impedance sensitive material (1) ac magnetization work;
Betal can (3), it is enclosed in the periphery of described giant magnetic impedance sensitive material (1);
Accessory power supply (4), it is connected with described betal can (3), for produce electric field between described giant magnetic impedance sensitive material (1) and described betal can (3).
2. utilize as claimed in claim 1 electric field to improve giant magnetic impedance sensor magnetic hysteresis device, it is characterized in that, further comprise sensing acquisition device (5), it is connected with the two ends of described giant magnetic impedance sensitive material (1), measures the impedance signal data of described giant magnetic impedance sensitive material (1).
3. utilize as claimed in claim 1 electric field to improve giant magnetic impedance sensor magnetic hysteresis device, it is characterized in that, the material of described giant magnetic impedance sensitive material (1) is under externally-applied magnetic field changes, and AC impedance changes the metal that is greater than 1%.
4. utilize as claimed in claim 1 electric field to improve giant magnetic impedance sensor magnetic hysteresis device, it is characterized in that, the material of described betal can (3) is not have a metal of magnetic.
5. utilize as claimed in claim 1 electric field to improve giant magnetic impedance sensor magnetic hysteresis device, it is characterized in that, further comprise that described metal level (3) is the encirclement structure that is deposited on the metal on described giant magnetic impedance sensitive material (1) surface.
6. utilize as claimed in claim 1 electric field to improve giant magnetic impedance sensor magnetic hysteresis device, it is characterized in that, between described betal can (3) and described giant magnetic impedance sensitive material (1), be provided with insulation course.
7. utilize electric field to improve an improvement method for the device of giant magnetic impedance sensor magnetic hysteresis, it is characterized in that, comprising:
Step 1: driving power described in gating (2) produces and exchanges the two ends that driving magnetic field is applied to described giant magnetic impedance sensitive material (1), magnetizes described giant magnetic impedance sensitive material (1);
Step 2: accessory power supply described in gating (4) is to described betal can (3) power supply, at the stable electromotive force of the upper generation of described betal can (3);
Step 3: produce radial distribution electric field between described giant magnetic impedance sensitive material (1) and the electromotive force of described betal can (3), suppress hysteresis.
8. the improvement method of utilizing electric field to improve the device of giant magnetic impedance sensor magnetic hysteresis as claimed in claim 7, it is characterized in that, further comprise step 4: described giant magnetic impedance sensitive material (1) and betal can (3) are placed in to external magnetic field, and described sensing acquisition device (5) is measured the impedance signal data that described giant magnetic impedance sensitive material (1) two ends change.
9. the improvement method of utilizing electric field to improve the device of giant magnetic impedance sensor magnetic hysteresis as claimed in claim 7, is characterized in that, described driving power (2) makes described giant magnetic impedance sensitive material (1) magnetic saturation.
10. the improvement method of utilizing electric field to improve the device of giant magnetic impedance sensor magnetic hysteresis as claimed in claim 8, it is characterized in that, the magnetic induction line direction of described external magnetic field is parallel to the long axis direction of described giant magnetic impedance sensitive material (1) and betal can (3).
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Cited By (2)
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| CN104391331A (en) * | 2014-12-02 | 2015-03-04 | 中国人民解放军军械工程学院 | Giant magneto-impedance sensor device for detecting distance and signal processing method thereof |
| CN110426660A (en) * | 2019-09-11 | 2019-11-08 | 昆山航磁微电子科技有限公司 | GMI transducer sensitivity improves structure and its operating method |
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| CN101192464A (en) * | 2006-11-30 | 2008-06-04 | 西门子Vdo汽车公司 | Method for cancelling hysteresis of magnetoelastic torque sensor |
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Cited By (3)
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| CN104391331A (en) * | 2014-12-02 | 2015-03-04 | 中国人民解放军军械工程学院 | Giant magneto-impedance sensor device for detecting distance and signal processing method thereof |
| CN110426660A (en) * | 2019-09-11 | 2019-11-08 | 昆山航磁微电子科技有限公司 | GMI transducer sensitivity improves structure and its operating method |
| WO2021047105A1 (en) * | 2019-09-11 | 2021-03-18 | 昆山航磁微电子科技有限公司 | Gmi sensor sensitivity improvement structure and operating method thereof |
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Inventor after: Zhang Qing Inventor after: Ruan Jianzhong Inventor after: Zhao Zhenjie Inventor after: Chu Junhao Inventor after: Han Yang Inventor before: Zhang Qing Inventor before: Ruan Jianzhong Inventor before: Zhao Zhenjie Inventor before: Chu Junhao |
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Effective date of registration: 20240412 Address after: 215300 Wuqiao Village, Qiandeng Town, Kunshan City, Suzhou City, Jiangsu Province Patentee after: KUNSHAN HONGYUNTONG MULTILAYER CIRCUIT BOARD CO.,LTD. Country or region after: China Address before: Room 1702, Science and Technology Square, Qianjin East Road, Kunshan Development Zone, Suzhou City, Jiangsu Province, 215335 Patentee before: Kunshan aeromagnetic Microelectronics Technology Co.,Ltd. Country or region before: China |