CN103675344A - Accelerometer and manufacturing process thereof - Google Patents
Accelerometer and manufacturing process thereof Download PDFInfo
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- CN103675344A CN103675344A CN201210356535.3A CN201210356535A CN103675344A CN 103675344 A CN103675344 A CN 103675344A CN 201210356535 A CN201210356535 A CN 201210356535A CN 103675344 A CN103675344 A CN 103675344A
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Abstract
Disclosed is an accelerometer which includes a measurement body, and an upper cover plate silicon chip and a lower cover plate silicon chip, which are connected with the measurement body. The measurement body includes a framework, and movement spacing bodies, elastic beams and a mass block, which are arranged in the framework. The movement spacing bodies are far away from the framework and connected with the framework through connection arms. The mass block is connected with the movement spacing bodies through the elastic beams. Each group of elastic beam includes a vertical beam and four cross beams. Each group of two-end cross beams at the two ends of a corresponding vertical beam are connected with corresponding movement spacing bodies. Two middle-part cross beams at the middle part of a corresponding vertical beam are connected with the mass block. Cover plate silicon chips provided with electrodes are bonded on both of the upper and lower surfaces of the measurement body and capacitances are formed between the cover plate silicon chips and the measurement body. The accelerometer adopts a stress isolation design and has the characteristic of being high in measurement accuracy and in a chip packaging process, the structure of the accelerometer reduces deformation resulted from a packaging stress significantly so that the stability of the accelerometer is improved. Moreover, the geometrical shape and force-bearing vibration mode are both of a symmetrical structure so that the accelerometer has the characteristics of being high in measurement accuracy.
Description
Technical field
The present invention relates to sensor field, relate in particular to a kind of accelerometer.
Background technology
Now, accelerometer is applicable to many application, for example measure the intensity of earthquake and collect data, the impact strength while detecting car crass and the angle and direction that detects inclination in mobile phone and game machine.And in the situation that microelectromechanical systems (MEMS) technology is constantly progressive, many nano level small-sized accelerometer accelerometers are extensively adopted by commercialization.
The accelerometer of conventional MEMS divides two kinds of pressure resistance type and condenser types, and piezoresistive accelerometer for example application number is 200480003916.7, within open day, is the Chinese invention patent application on March 15th, 2006.Piezoresistive accelerometer generally has semi-girder and mass to form, and force sensing resistance is arranged on semi-girder.Mass can move because of acceleration, makes semi-girder distortion, thereby causes the variation of resistance value.
The capacitive accelerometer for example patent No. is that US6805008, open day are the United States Patent (USP) on October 19th, 2004, and capacitive accelerometer also comprises semi-girder and mass.When having acceleration, the outside framework of accelerometer can be to acceleration direction motion, and due to the effect of inertia, the displacement meeting of mass is very little, mass and another interelectrode clearance distance is changed and cause the variation of electric capacity.These two kinds of accelerometers are all made by micro fabrication, have the features such as volume is little, cost is low.Yet semi-girder is elastic beam, and only have four semi-girders that four limits of mass are connected with framework.For this reason, when outside framework moves, the displacement amplitude of each semi-girder is very large.And each semi-girder can not produce identical distortion and displacement yet.Make the swing Mode Shape of this accelerometer slightly asymmetric.
In addition, above-mentioned capacitive accelerometer in encapsulation and integration, is being understood and produced encapsulation stress because of the thermal expansivity difference of various materials in packaging body together with other microelectronic modules.Encapsulation stress can directly have influence on the performance of each element.Microsize based on MEMS device and have movable member, compares with other elements, and MEMS element is more responsive to various stress.Encapsulation stress may cause the element of accelerometer to produce distortion, makes accelerometer acceleration measurement accurately, has reduced stability and the reliability of accelerometer.
Summary of the invention
Technical matters to be solved by this invention is to overcome the deficiency of above-mentioned prior art, provides a kind of encapsulation stress that is not subject to affect, and has the accelerometer of higher stability and reliability.
According to a kind of accelerometer provided by the present invention, comprising: the upper cover plate silicon chip and the lower cover silicon chip that measure body, are connected with described measurement body; Described measurement body comprises framework, is positioned at movable limit body, elastic beam and the mass of described framework; Described movable limit body is away from described framework, and is connected with described framework by linking arm; Described mass is connected by many groups of described elastic beams with described movable limit body, and described in every group, elastic beam comprises a vertical beam and four crossbeams, and every group of two end floor beams that are positioned at described vertical beam two ends are connected with described movable limit body; Two middle beams that are positioned at described vertical beam middle part are connected with described mass.
The technical solution adopted in the present invention also has following subsidiary characteristic:
Described mass is provided with a plurality of depressed parts, and described movable limit body is a plurality of, and described in each, movable limit body is separately positioned in described depressed part.
Between described mass and described movable limit body, form free gap.
Described elastic beam is arranged at respectively in the clearance space between described framework and described mass, and can be freely movable in described clearance space.
Each two described middle beam that are positioned at described vertical beam middle part is separately positioned on the center line both sides of described mass.
Described linking arm is arranged on the corner of described movable limit body, and is connected with the interior angle of described framework.
Described measurement body is epitaxial silicon on double-sided insulation body (SOI) structure, comprises upper silicon layer, intermediate silicon layers and lower silicon layer; Between every two-layer silicon layer, be respectively arranged with silicon dioxide layer.On described double-sided insulation body, epitaxial silicon structure is also referred to as two-sided soi structure.
A plurality of described elastic beams, described movable limit body and described linking arm form in respectively described upper silicon layer and described lower silicon layer symmetrically, form double-decker.
On described measurement body, described upper cover plate silicon chip and described lower cover silicon chip, be respectively arranged with electrode.
Manufacturing process according to accelerometer provided by the present invention, comprises the following steps:
The first step forms a plurality of holes that are deep to intermediate silicon layers by photoetching, deep etching and etching respectively on the upper lower silicon layer of two-sided soi wafer;
Second step, amasss polysilicon to intermediate silicon layers and fills up described hole at described inner hole deposition, forms electric pathway; Then the superficial growth at the upper lower silicon layer of described two-sided soi wafer goes out silicon dioxide layer; And carry out polishing grinding;
The 3rd step forms a plurality of elasticity crossbeams, elasticity vertical beam, movable limit body and linking arm by photoetching, deep etching and etching on the upper lower silicon layer of described two-sided soi wafer; And by high-temperature oxydation, at the dew of described elasticity crossbeam, described elasticity vertical beam, described movable limit body and described linking arm, put on surface outside and grow silicon dioxide, or by chemical deposition (CVD) method the surface deposition layer of silicon dioxide layer at described elastic beam, movable limit body and linking arm;
The 4th step, the silicon dioxide of dew being put in described intermediate silicon layers outside by photoetching and etching is removed, and described in deep etching intermediate silicon layers to certain depth;
The 5th step, by intermediate silicon layers between framework and mass simultaneously in the vertical direction and horizontal direction corrode, thereby form free-moving elastic beam, and form described movable limit body and described linking arm simultaneously;
The 6th step, puts described silicon dioxide etching outside by dew;
The 7th step, carries out disposable bonding by described two-sided soi wafer and lower cover silicon chip after upper cover plate silicon chip, processing.
In the manufacturing process of accelerometer provided by the invention, also further comprising the steps:
A, on described upper cover plate silicon chip or lower cover silicon chip, by photoetching, deep etching and etching, form a through hole;
B, on the bonding face of described upper cover plate silicon chip and described lower cover silicon chip respectively by photoetching, deep etching and be etched in depressed area of each self-forming on the bonding face of described upper cover plate silicon chip and described lower cover silicon chip;
C, with described two-sided soi wafer bonding before, described upper cover plate silicon chip and described lower cover silicon chip are cleaned;
D, with described two-sided soi wafer bonding after, depositing metal extraction electrode on the surface of described upper cover plate silicon chip, described lower cover silicon chip, by the depositing metal on the surface of described two-sided soi wafer of the described through hole on described upper cover plate silicon chip or lower cover silicon chip, and by described through hole extraction electrode.
Silicon dioxide layer in above-mentioned processing technology in the present invention plays its silicon layer covering of protection, makes it not be etched or corrode.
The method of described deep etching and described etching is one or more methods in following methods: dry etching or wet etching, described dry etching comprises: deep reaction ion etching and the reactive ion etching of silicon.The described mordant for etching silicon layer is one or more combination of following mordant: the xenon difluoride of potassium hydroxide, tetramethyl aqua ammonia, ethylenediamine phosphorus benzenediol or gaseous state.
The described mordant for corrode silicon dioxide layer is one or more combination of following mordant: the hydrogen fluoride of buffered hydrofluoric acid, 49% hydrofluorite or gaseous state.Silicon dioxide layer also can carry out dry method removal by reactive ion etching.
According to a kind of accelerometer provided by the present invention and manufacturing process tool thereof, have the following advantages: first, between mass and framework, adding movable limit body to effectively reduce in the encapsulation stress impact that mass and elastic arm are produced of when encapsulation.Thereby stability and the reliability of accelerometer have been improved.Between mass and framework, add movable limit body also to reduce the impact that temperature in when work working environment and air pressure cause accelerometer produced thermal stress.In addition, linking arm is through the center line of mass, and every elastic beam all take mass center line as axle symmetrical.Therefore there is good structural symmetry and stable.Again, the manufacturing process of this accelerometer has been used two-sided soi wafer and disposable three wafer bonding technology, by elastic beam and mass that on two-sided soi wafer, corrosion forms, can aim at very accurately and height of formation symmetrical structure.The Two-layer Beam of the bonding technology manufacturing of using compared with prior art, the feature such as the accelerometer precision of this technique manufacturing is high, error is little, yield rate has also obtained larger lifting.And because etching process is comparatively simple, the production efficiency of this product processes is high, cost is also lower.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the stereographic map of the measurement body in the present invention.
Fig. 3 is the vertical view of the measurement body in the present invention.
Fig. 4 is the first step to the three step schematic diagram of the manufacture method in the present invention.
Fig. 5 is the 4th step to the six step schematic diagram of the manufacture method in the present invention.
Fig. 6 is the 7th step schematic diagram of the manufacture method in the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail:
With reference to Fig. 1, a kind of accelerometer, comprising: the upper cover plate silicon chip 2 and the lower cover silicon chip 3 that measure body 1, are connected with described measurement body 1; On described measurement body 1, described upper cover plate silicon chip 2 and described lower cover silicon chip 3, be respectively arranged with an electrode 4; Described measurement body 1 is two-sided soi structure, comprises upper silicon layer 5, intermediate silicon layers 6 and lower silicon layer 7; Between every two-layer silicon layer, be respectively arranged with silicon dioxide layer 8.
With reference to Fig. 2 and Fig. 3, described measurement body 1 comprises framework 11, is positioned at the movable limit body 12 of described framework 11, elastic beam 13 and mass 14; Described movable limit body 12 is away from described framework 11, and is connected with described framework 11 by linking arm 15; Described mass 14 is connected by many groups of described elastic beams 13 with described movable limit body 12, described in every group, elastic beam 13 comprises a vertical beam 131 and four crossbeams 132, and every group of two end floor beams 132 that are positioned at described vertical beam two ends are connected with described movable limit body 12; Two middle beams 132 that are positioned at described vertical beam 131 middle parts are connected with described mass 14.Described mass 14 is provided with a plurality of depressed parts 141, and described movable limit body 12 is a plurality of, and described in each, movable limit body 12 is separately positioned in described depressed part 141.Between mass 14 and movable limit body 12, form free gap.
Referring to Fig. 1 and Fig. 2, described measurement body 1 is divided into upper silicon layer 5, intermediate silicon layers 6 and lower silicon layer 7, is formed with symmetrically respectively upper and lower two groups of symmetrically arranged described movable limit bodies 12, described elastic beam 13 and described linking arms 15 in described upper silicon layer and described lower silicon layer.
Referring to Fig. 2 and Fig. 3, preferably, described mass 14 is a square body, and described elastic beam 13 is arranged at respectively in the clearance space between described framework 11 and described mass 14, and can be freely movable in described clearance space.Elastic beam 13 comprises a vertical beam 131 and four crossbeams 132, and preferably, every one deck has four groups of elastic beams 13, movable limit body 12 and linking arm 15, and every group of elastic beam 13 is separately positioned on four limits of described mass 14.Every group of two end floor beams 132 that are positioned at described vertical beam two ends are connected with described movable limit body 12; Two middle beams 132 that are positioned at described vertical beam 131 middle parts are connected with described mass 14.It is rotational symmetry that every elastic beam 13 all be take the center line of mass 14.Described in each, linking arm 15 is arranged on the corner of movable limit body 12 described in each, and is connected with the interior angle of described framework 11.The one-piece construction of measuring body 1 is symmetrical structure.Make global design balance, stable more.The direction of sense acceleration is more accurate.In the present invention, mass 14 also can be other shapes, such as hexagon, octagon or circle etc.And the elastic beam in the present invention 13, movable limit body 12, linking arm 15 also can be for multilayer, organize structure more, be not restricted to two-layer, the structure of four groups every layer.In addition, the quantity of the vertical beam 131 in elastic beam 13 and crossbeam 132 is also not limited to a vertical beam 131 and four crossbeams 132.
Referring to Fig. 1 and Fig. 2, in sense acceleration process, the framework 11 in described measurement body 1 can, because being subject to acceleration action, move to acceleration direction.Described elastic beam 13 can produce certain displacement.But because of inertia effect, the displacement amplitude of mass 14 can be relatively little.According to formula C=ε A/d, the electric capacity between two parallel conducting strips equals dielectric coefficient and is multiplied by over against area divided by vertical interval.When producing displacement because of acceleration, the spacing between mass 14 and upper cover plate silicon chip 2 and lower cover silicon chip 3 can change.For this reason, the electric capacity of measuring between body 1 and upper cover plate silicon chip 2 and lower cover silicon chip 3 also can change.The acceleration that integrated chip can go out to detect by the change calculations of electric capacity.After acceleration disappears, elastic beam 13 can be got back to original state, makes mass 14 and upper cover plate silicon chip 2 and lower cover silicon chip 3 capacitance each other be attributed to steady state value.
Referring to Fig. 2 and Fig. 3, in the process of encapsulation accelerometer, the encapsulation stress that described framework 11 is subject to is maximum, also the most easily produces deformation.Technical scheme of the present invention is by four interior angles of framework 11, linking arm 15 being set respectively, and is connected with movable limit body 12.While producing distortion even if framework 11 is subject to encapsulation stress, although be arranged on four linking arms 15 on interior angle, also can produce certain distortion.But because linking arm 15 is elastic arm, the in the situation that of distortion, can not have influence on movable limit body 12, the elastic beam 13 that more can not have influence on mass 14 and be connected with mass 14 yet.For this reason, the capacitance between mass 14 and upper cover plate silicon chip 2 and lower cover silicon chip 3 can not be subject to the impact of encapsulation stress, maintains metastable numerical value.In the situation that there is no acceleration, described mass 14 is identical with the electric capacity between described upper cover plate silicon chip 2 and lower cover silicon chip 3.In the situation that having acceleration, it is basically identical that the displacement of each elastic beam 13 also keeps.This accelerometer can more effectively and accurately detect and vibrate and acceleration.
Then,, according to Fig. 4,5,6 manufacturing process that describe in detail for the manufacture of the accelerometer in the present invention, comprise the following steps:
The first step applies respectively photoresist on the upper silicon layer 5 of two-sided soi wafer and lower silicon layer 7.According to specific pattern, upper silicon layer 5 and lower silicon layer 7 are exposed afterwards, and develop with developer solution.The pattern being exposed like this will display.The partial depth that the deep reaction ion etching of recycle silicon is exposed upper silicon layer 5 and lower silicon layer 7 is etched to silicon dioxide layer 8.Then with reactive ion dry etching or buffered hydrofluoric acid, to being revealed the silicon dioxide layer 8 of putting outside, carry out etching.Thereby form a plurality of holes that are deep to intermediate silicon layers 6.Afterwards photoresist layer is removed.
Second step, amasss polysilicon to intermediate silicon layers and fills up described hole at described inner hole deposition, thereby forms electric pathway; Then at the upper silicon layer 5 of described two-sided soi wafer and the superficial growth of lower silicon layer 7, go out silicon dioxide layer.And by chemistry and mechanical polishing method, polished in the surface of upper silicon layer 5 and lower silicon layer 7, reach the level and smooth standard on surface.
The 3rd step applies respectively photoresist on the upper silicon layer 5 of described two-sided soi wafer and lower silicon layer 7.According to specific pattern, upper silicon layer 5 and lower silicon layer 7 are exposed afterwards, and develop with developer solution.The pattern being exposed like this will display.First utilize reactive ion dry etching or buffered hydrofluoric acid to carry out etching to the part being exposed on the silicon dioxide layer growing.The deep reaction ion etching of recycling silicon by upper silicon layer 5 and lower silicon layer 7 deep etchings to silicon dioxide layer 8.Finally with reactive ion dry etching or buffered hydrofluoric acid, to being revealed the silicon dioxide layer 8 of putting outside, carry out etching.Thereby form a plurality of elastic beams 13, movable limit body 12 and linking arm 15.And after will photoresist removing, utilizing high temperature to go out layer of silicon dioxide layer in the superficial growth of described elastic beam 13, movable limit body 12 and linking arm 15, or by chemical deposition (CVD) method the surface deposition layer of silicon dioxide layer at described elastic beam 13, movable limit body 12 and linking arm 15.
The 4th step, removes in silicon dioxide layer 8 and reveals and put silicon dioxide outside with silicon dioxide dry etching.And again use the deep reaction ion etching of silicon or the xenon difluoride of gaseous state by intermediate silicon layers 6 deep etchings to certain depth.
The 5th step, is used the xenon difluoride of potassium hydroxide or tetramethyl aqua ammonia or ethylenediamine phosphorus benzenediol or gaseous state to carry out level and longitudinally corrosion to being etched to the intermediate silicon layers 6 of certain depth.And control etching time according to the size in the region that needs to be corroded in intermediate silicon layers 6.After intermediate silicon layers 6 is corroded, upper and lower two-layer free-moving a plurality of elastic beams 13, movable limit body 12 and linking arm 15 have been formed.
The 6th step, the described silicon dioxide that dew is put at silicon face falls with the hydrogen fluoride corrosion of buffered hydrofluoric acid or 49% hydrofluorite or gaseous state.；
The 7th step, carries out disposable bonding by described two-sided soi wafer and lower cover silicon chip after upper cover plate silicon chip, processing.
In the manufacturing process of accelerometer provided by the invention, also further comprising the steps:
Processing technology to described upper cover plate silicon chip and lower cover silicon chip also comprises:
A, with described two-sided soi wafer bonding before, on described upper cover plate silicon chip 2 or lower cover silicon chip 3 surfaces, apply photoresist.According to specific pattern, it is exposed afterwards, and develop with developer solution.The pattern being exposed like this will display.The partial depth that recycling deep reaction ion etching or potassium hydroxide or tetramethyl aqua ammonia or ethylenediamine phosphorus benzenediol are exposed upper cover plate silicon chip 2 or lower cover silicon chip 3 is etched to silicon dioxide layer 8.Then with the hydrogen fluoride of buffered hydrofluoric acid or 49% hydrofluorite or gaseous state, the silicon dioxide layer 8 being exposed is carried out to etching, and form a through hole.And photoresist is removed.
B, on the bonding face of upper cover plate silicon chip 2 and lower cover silicon chip 3, apply photoresist, according to specific pattern, it is exposed afterwards, and develop with developer solution.The pattern being exposed like this will display.Recycling deep reaction ion etching or potassium hydroxide or tetramethyl aqua ammonia or ethylenediamine phosphorus benzenediol, the partial depth respectively upper cover plate silicon chip 2 and lower cover silicon chip 3 being exposed is etched to certain position.Thereby depressed area of each self-forming on the bonding face of upper cover plate silicon chip 2 and lower cover silicon chip 3, and photoresist is removed.
C, with described two-sided soi wafer bonding before, upper cover plate silicon chip 2 and 3 pairs of lower cover silicon chips are cleaned;
D, with described two-sided soi wafer bonding after, depositing metal extraction electrode 4 on the surface of described upper cover plate silicon chip 2, described lower cover silicon chip 3, by described through hole depositing metal on the surface of described two-sided soi wafer of 3 on described upper cover plate silicon chip 2 or lower cover silicon chip, and by described through hole extraction electrode 4.
Wherein, the silicon dioxide layer in the above-mentioned processing technology in the present invention plays its silicon layer covering of protection, makes it not be etched or corrode.
The method of the deep etching described in the present invention and described etching is one or more methods in following methods: dry etching or wet etching, described dry etching comprises: deep reaction ion etching and the reactive ion etching of silicon.
Material, equipment, technique used in said method in the present invention all adopt prior art, but by utilizing these materials and technique, especially the accelerometer that has utilized two-sided soi wafer to manufacture, there is the variation of matter, by corrosion forms on two-sided soi wafer elastic beam 13 and mass 14, can aim at very accurately and height of formation symmetrical structure.The Two-layer Beam of the bonding technology manufacturing of using compared with prior art, the accelerometer precision of this technique manufacturing is high, error is little, yield rate has also obtained larger lifting.And because etching process is comparatively simple, the production efficiency of this product processes is high, cost is also lower.In addition, geometry of the present invention and the stressed vibration shape are full symmetrical configuration.Make the detection degree of accuracy of this accelerometer high.And between mass 14 and framework 11, adding movable limit body 12 not only effectively to eliminate the impact at when encapsulation encapsulation stress, also reduced the impact on accelerometer of the thermal stress brought because of temperature variation in working environment.Make this accelerometer more stable.
Claims (14)
1. an accelerometer, comprising: the upper cover plate silicon chip and the lower cover silicon chip that measure body, are connected with described measurement body; Described measurement body comprises framework, is positioned at movable limit body, elastic beam and the mass of described framework; It is characterized in that, described movable limit body is away from described framework, and is connected with described framework by linking arm; Described mass is connected by many groups of described elastic beams with described movable limit body, and described in every group, elastic beam comprises a vertical beam and four crossbeams, and every group of two end floor beams that are positioned at described vertical beam two ends are connected with described movable limit body; Two middle beams that are positioned at described vertical beam middle part are connected with described mass.
2. accelerometer as claimed in claim 1, is characterized in that, described mass is provided with a plurality of depressed parts, and described movable limit body is a plurality of, and described in each, movable limit body is separately positioned in described depressed part.
3. accelerometer as claimed in claim 2, is characterized in that, between described mass and described movable limit body, forms free gap.
4. accelerometer as claimed in claim 1, is characterized in that, described elastic beam is arranged at respectively in the clearance space between described framework and described mass, and can be freely movable in described clearance space.
5. accelerometer as claimed in claim 1, is characterized in that, each two described middle beam that are positioned at described vertical beam middle part is separately positioned on the center line both sides of described mass.
6. accelerometer as claimed in claim 1, is characterized in that, described linking arm is arranged on the corner of described movable limit body, and is connected with the interior angle of described framework.
7. accelerometer as claimed in claim 1, is characterized in that, described measurement body is epitaxial silicon structure on double-sided insulation body, comprises upper silicon layer, intermediate silicon layers and lower silicon layer; Between every two-layer silicon layer, be respectively arranged with silicon dioxide layer.
8. accelerometer as claimed in claim 7, is characterized in that, a plurality of described elastic beams, described movable limit body and described linking arm form in respectively described upper silicon layer and described lower silicon layer symmetrically, forms double-decker.
9. accelerometer as claimed in claim 1, is characterized in that, on described measurement body, described upper cover plate silicon chip and described lower cover silicon chip, is respectively arranged with electrode.
10. a manufacturing process for accelerometer, is characterized in that, described manufacturing process comprises the following steps:
The first step forms a plurality of holes that are deep to intermediate silicon layers by photoetching, deep etching and etching respectively on the upper lower silicon layer of epitaxial silicon silicon chip on double-sided insulation body;
Second step, amasss polysilicon to intermediate silicon layers and fills up described hole at described inner hole deposition; Then the superficial growth at the upper lower silicon layer of described two-sided soi wafer goes out silicon dioxide layer;
The 3rd step forms a plurality of elasticity crossbeams, elasticity vertical beam, movable limit body and linking arm by photoetching, deep etching and etching on the upper lower silicon layer of epitaxial silicon silicon chip on described double-sided insulation body; And put on surface outside and grow silicon dioxide at the dew of described elasticity crossbeam, described elasticity vertical beam, described movable limit body and described linking arm by high-temperature oxydation, or by chemical deposition method deposit layer of silicon dioxide;
The 4th step, the silicon dioxide of dew being put in described intermediate silicon layers outside by photoetching and etching is removed, and described in deep etching intermediate silicon layers to certain depth;
The 5th step, by the intermediate silicon layers corrosion between framework and mass, thereby forms free-moving elastic beam, and forms described movable limit body and described linking arm simultaneously;
The 6th step, puts described silicon dioxide etching outside by dew;
The 7th step, carries out disposable bonding by epitaxial silicon silicon chip and lower cover silicon chip on the described double-sided insulation body after upper cover plate silicon chip, processing.
The manufacturing process of 11. accelerometers as claimed in claim 10, is characterized in that, the processing technology of described upper cover plate silicon chip and lower cover silicon chip is also comprised:
A, on described upper cover plate silicon chip or lower cover silicon chip, by photoetching, deep etching and etching, form a through hole;
B, on the bonding face of described upper cover plate silicon chip and described lower cover silicon chip respectively by depressed area of each self-forming of photoetching, deep etching and etching;
C, with described double-sided insulation body on before epitaxial silicon wafer bonding, described upper cover plate silicon chip and described lower cover silicon chip are cleaned;
D, with described double-sided insulation body on after epitaxial silicon wafer bonding, depositing metal extraction electrode on the surface of described upper cover plate silicon chip, described lower cover silicon chip, by depositing metal on the surface of the epitaxial silicon silicon chip on described double-sided insulation body of the described through hole on described upper cover plate silicon chip or lower cover silicon chip, and by described through hole extraction electrode.
12. according to the manufacturing process of the accelerometer described in claim 10 or 11, it is characterized in that, the method of described deep etching and described etching is one or more methods in following methods: dry etching or wet etching, described dry etching comprises: deep reaction ion etching and the reactive ion etching of silicon.
The manufacturing process of 13. accelerometer accelerometers according to claim 10, it is characterized in that the combination of one or more that the described mordant for etching silicon layer is following mordant: the xenon difluoride of potassium hydroxide, tetramethyl aqua ammonia, ethylenediamine phosphorus benzenediol or gaseous state.
The manufacturing process of 14. accelerometer accelerometers according to claim 10, it is characterized in that the combination of one or more that the described mordant for corrode silicon dioxide layer is following mordant: the hydrogen fluoride of buffered hydrofluoric acid, 49% hydrofluorite or gaseous state.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104591080A (en) * | 2015-02-05 | 2015-05-06 | 中国电子科技集团公司第四十九研究所 | Method for improving gold-gold thermal compression bonding strength |
| CN104950137A (en) * | 2015-06-23 | 2015-09-30 | 西安电子科技大学 | Transverse sensitive acceleration sensor chip having stress isolation structure |
| CN107389981A (en) * | 2017-06-07 | 2017-11-24 | 中国科学院地质与地球物理研究所 | A kind of mems accelerometer and its manufacturing process in converted measurement direction |
| CN107607100A (en) * | 2017-10-19 | 2018-01-19 | 北方电子研究院安徽有限公司 | A kind of silicon micro mechanical angular oscillation gyro shock resistance elastic bolster guide structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060272414A1 (en) * | 2005-06-03 | 2006-12-07 | Farrokh Ayazi | Capacitive microaccelerometers and fabrication methods |
| CN1959417A (en) * | 2006-11-17 | 2007-05-09 | 中国科学院上海微***与信息技术研究所 | Micro mechanical capacitance type acceleration transducer, and fabricating method |
| CN101066749A (en) * | 2007-06-12 | 2007-11-07 | 中国科学院上海微***与信息技术研究所 | Cantilever structure and its making process and application |
| CN101858929A (en) * | 2010-05-21 | 2010-10-13 | 中国科学院上海微***与信息技术研究所 | Capacitive micro-acceleration sensor with symmetrically combined elastic beam structure and production method thereof |
| CN102495234A (en) * | 2011-11-23 | 2012-06-13 | 中国科学院上海微***与信息技术研究所 | Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method |
| CN102642801A (en) * | 2012-04-27 | 2012-08-22 | 中国科学院上海微***与信息技术研究所 | Double-faced parallel symmetric silicon beam mass block structure and method for preparing same |
| CN202815009U (en) * | 2012-09-21 | 2013-03-20 | 中国科学院地质与地球物理研究所 | Accelerometer |
-
2012
- 2012-09-21 CN CN201210356535.3A patent/CN103675344B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060272414A1 (en) * | 2005-06-03 | 2006-12-07 | Farrokh Ayazi | Capacitive microaccelerometers and fabrication methods |
| CN1959417A (en) * | 2006-11-17 | 2007-05-09 | 中国科学院上海微***与信息技术研究所 | Micro mechanical capacitance type acceleration transducer, and fabricating method |
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