CN103675073A - Electronic biosensor based on single electric charge detection - Google Patents
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Abstract
The invention relates to an electronic biosensor based on single electric charge detection; the invention discloses an electronic sensor of an ion-gated bipolar amplifier (IGBA); the electronic sensor comprises a combined type MOSFET, a BJT and a sample container connected with a floating gate electrode layer of the MOSFET; the electronic sensor has very high sensitivity, and can be used in solution ion detection, biology molecular detection and gas detection.
Description
Technical field
The present invention relates to carry out the electronic sensor of single charge detection (single charge detection).Exactly, the present invention relates to the electronic biosensor based on ion grid-control bipolar amplifier.
Background technology
Check point (point-of-care is called for short " POC ") medical diagnosis presents the huge market opportunity and great socioeconomic impact.Specifically, particularly, under the background of personalized medicine, can use specific DNA and protein label to carry out early diagnosis to cancer, cardiovascular disease, infection or allergy etc.For various reasons, the test of these labels had not only been bothered conventionally but also expensive and need the highly laboratory of specialty.At present, for method that specific biological molecules is identified and detected in convenience, specific aim, sensitivity, parallel processing and the aspect such as reduce costs and also have serious obstacle.Meanwhile, current state-of-the-art detection system also needs to carry out the preparation of samples work of huge amount.
Should be with strong points, quick, accurate, reliable, low-cost and be easy to use for the desirable diagnostic system of POC.Meanwhile, in order to realize maximum dirigibility, this system must be lightweight and energy-conservation.Yet, in order to realize this target, need the relation between balance sample preparation carefully, target identification and detector sensitivity.
Yet from the viewpoint of electronic equipment, it is inadequate depending merely on increase sensitivity.In order can effectively to use in POC environment, high sensitivity need match with large signal to noise ratio (S/N ratio) output.
Current, the commercially available high flux sensor about biomolecule is normally based on optical detective technology, is typically by fluorescence and detects, but the parallel DNA sequencing instrument based on charge detection that passes through complementary metal oxide semiconductor (CMOS) (CMOS) chip is recently by Ion Torrent/Life Technologies[1] commercialization.The chip of Ion Torrent company adopts ion-sensitive field effect transistor (ISFET).Ion-sensitive field effect transistor (ISFET) came out first [2] before approximately 40 years, and latest developments have arrived nanoscale magnitude [3], and it has represented that a class is very competitive without label biology sensor.Yet obtaining better balance between preparation of samples and detector sensitivity still has many improved places that are worth.
Recently, aspect the various trials that improve molecule sensitivity, normally based on carbon nano tube device or nano-wire transistor carried out as sensing element.The power that promotes its development is that the high table body ratio that these structures have is of value to Molecular Detection [3-5].Yet the improvement of its sensitivity is still not enough, because it is still limited to the shortcoming of mos field effect transistor (MOSFET) structure own.In addition, as carbon nano-tube and nano wire, the probability of catching of low concentration molecule [6] has also seriously been limited on little surface.
As far as we know, up to the present, in the unique trial obtaining than aspect the sensitiveer amplification detection device research of ISFET, be recent the done work of the people such as Yuan [7a], and this work is submitted to the form of patented claim by the people such as Kang [7b].They have studied and traditional MOSFET(ISFET) gated lateral bipolar junction transistor (BJT) in parallel, thus this unitized construction can be operated under the mixed mode with initiatively amplification (active amplification).The shortcoming of the parallel connecting structure of these two devices is the intrinsic low gains of gated lateral BJT.In grid bias, during lower than the forward voltage of bipolar device, the subthreshold property class of this unitized construction is similar to MOSFET(ISFET) subthreshold characteristic.The mutual conductance obtaining by this mixed structure strengthens in the bias voltage more than threshold voltage that only occurs in MOSFET.Therefore,, in this application-specific, the amplification effect of this structure will be very low.And, also need the outside that extra port carries out each device in required unitized construction to connect.This extra wiring can be introduced harmful signal noise.
Under molecular level sorrow of separation condition, the resolution characteristic that can be used for the affinity reagent (affinity reagent) of Molecular Detection only has several orders of magnitude conventionally, so just can not react most of associated biomolecule objects are analyzed by simple bonding/nonbonding, because in actual biological sample such to as if rarer should be appreciated that, the resolution characteristic that can be used for the affinity reagent (affinity reagent) of Molecular Detection only has several orders of magnitude, so just can not to most of related objectives, analyze by simple association reaction/non-binding reaction, for example, because these targets become more rare and (see analytical chemistry 84:1824 page (the Analytical Chemistry of 2012 in actual biological sample, 84:1824, 2012) blue Dege benevolence U(Landegren U in), dimension Buddhist nun Reed
han Mode M(Hammond M), your RY(Nong RY), Wu D(Wu D), the wire drawing E of Erie
ka Mali-Ma Hadan M(Kamali-Moghaddam M) chance (Opportunities for sensitive plasma protein analysis) that responsive type plasma proteins is analyzed).Therefore, when conducting molecule detects, conventionally all rely on detection reaction highly targetedly, in order to react with high signal to noise ratio (S/N ratio) detection trigger, this highly targetedly detection reaction conventionally all need rely on to use multiple affinity reagent synchronously to carry out target identification, thereby with high signal to noise ratio (S/N ratio) detection trigger reaction.
Igbt (Insulated-Gate Bipolar Transistors:IGBT) also can be regarded as the mixed structure of a kind of MOSFET and BJT, conventionally be applied in high power electronic equipment [9] field, particularly be mainly used in high power (kW/kV) switch in high-voltage power line, for example, traction motor control, UPS supply (UPS) unit, welding gear etc.
Summary of the invention
The invention provides the electronic sensor of a kind of ion grid-control bipolar amplifier (Ion-Gated Bipolar Amplifier:IGBA), it comprises combined metal oxide semiconductor field effect transistor (MOSFET), bipolar junction transistor (BJT) and the sampling receptacle being connected with this MOSFET floating boom gate electrode layer.When detecting, this sampling receptacle is used for fixing electrolyte solution.The emitter of BJT, base stage and collector form the face-to-face basalis of horizontal expansion layer and vertical continuous.Vertical stretch in the base layer of BJT divides the drain electrode that has formed MOSFET.
Preferably, collector have that vertical stretch divides and the source electrode of MOSFET through arranging so that between the vertical stretch of the vertical stretch of described collector at least a portion in dividing in described source electrode and described base stage/drain electrode divide, MOSFET raceway groove will be formed near the upper surface of vertical component of collector like this.
Preferably, it is symmetrical that described electronic sensor divides with respect to the vertical stretch of base stage/drain electrode, thereby forms dual combined type MOSFET/BJT.
Only have preposition amplification (pre-amplification) is applied in to close as far as possible signal source part, could obtain maximum signal to noise ratio (S/N ratio) output.The present invention has realized this point, because the first amplifier stage is arranged in sensor itself.
An advantage of the invention is that described electronic sensor can be prepared with ways and means very perfect in microelectronic, manufacturing cost can approach with conventional standard integrated circuit manufacturing cost.In addition, this design has the essential characteristic of micron order yardstick (device) and nanoscale (molecule) two aspects, thereby makes these sensors be easy to manufacture with ready-made facility.
Therefore, the present invention is without carrying out expensive complicated preparation of samples, because it has introduced a kind of sensor, this sensor has high sensitivity, but makes manufacturing cost still remain on common IC manufacture level simultaneously.This high sensor has also been opened broader clinical practice, and reason is to become so low for clearly detecting required molecular amounts, makes finally can carry out medical diagnosis on disease with plasma proteins biomarker.
Described electronic sensor is widely used, such as, but not limited to medical diagnosis device, environment and bioprocess analytical equipment, Food processing and chemical process supervising device.
The bipolar amplifier of ion grid-control operates the voltage with very low (1-10 volt) and very low electric current (microampere is to milliampere).Therefore, it is applicable to the device of portable, battery powered.The present invention has high sensitivity and large signal to noise ratio (S/N ratio), and it is highly suitable for carrying out Molecular Detection.
The basic function of the bipolar amplifier of ion grid-control and operating conditions, be different from above-mentioned aforesaid IGBT device completely, difference is that amplifier is herein the floating-gate device for low battery power operation, and has high internal gain and complete operating conditions outside the working range of conventional high power IGBT.Aforementioned IGBT device has relatively thick drift region (thickness is tens of to hundreds of micron, depends on operating voltage), and thicker layer can bear higher voltage-operated.In addition, the gate electrode biasing that IGBT also has for switching device shifter device duty connects, that is to say, and not floating-gate device structure.In addition, IGBT can not allow inner BJT to have very high-gain, because exist, switches the risk that transition causes breech lock.The power that IGBT device is generally used for processing with large voltage (kV) and large electric current (kA) occasion is controlled in application.
Accompanying drawing explanation
Fig. 1 is the structural representation according to electronic sensor of the present invention;
Fig. 2 is the circuit diagram according to electronic sensor of the present invention.
Embodiment
As shown in the figure, p district 30, p+ contact layer 35, n+ source electrode 40 and contact layer 50 occur in pairs, thereby form the device with respect to vertical component 26 substantial symmetry in n-district 25.Represented is a limiting examples, but with regard to its functional and manufacture process, belongs to preferred embodiment.It shall yet further be noted that this device can build with p-type MOSFET and the BJT that contains npn configuration, method is the polarity of the related doped layer of appropriately change.In addition, above-mentioned size and concentration should be regarded nonrestrictive example as.For example in affiliated field, know, doping content can change by different modes and optimize, and such those skilled in the art that is changed to knows.
N-serves as in district base stage and back p+ floor serves as in the such configuration of emitter, and the channel current being produced by MOSFET is the base current in BJT equally.Make like this channel current signal be able in BJT to amplify and make it cathode terminal in Fig. 1 to sentence the form of the collector current signal greatly strengthening and leave sensor, change in electric is further amplified by the combination of MOSFET and BJT.By moving N-shaped MOSFET to obtain optimum sensitivity and linearity under subthreshold value state, the variation of the surface potential of the floating boom being caused by charged molecule will cause the corresponding variation pro rata of collector current of amplifying in this device, and electronic sensor changes generation change in electric by the surface conjunction of functionalization film and gas molecule or ion.Between negative electrode/source terminal by the MOSFET in contrast electrode and Fig. 2, apply bias voltage, the operating point of MOSFET (operating point) is adjusted.Because this device merges MOSFET and BJT, therefore likely get rid of this situation in noise entering signal path before signal arrives the first amplifier stage.
The function of floating gate structure can be illustrated by following instance, and wherein in appropriate functionalization (functionalization) afterwards, the DNA chain of known base sequence is fixed on the upper metal surface in Fig. 1 with required superficial density.Described base sequence, according to concrete application design in advance, makes to catch and to identify specific one group of DNA chain (that is, target dna).Due to target dna chain be characterised in that its base sequence and fixing DNA chain complementary, therefore, strong base pairing chemical interactions during due to DNA or RNA hybridization and target acquisition DNA, and/or can there is the enzymatic amplification reaction of local terminal in target dna chain, thereby improved specific aim and sensitivity.DNA molecular is normally charged.Therefore, this crossover process changes the electromotive force on the metal surface that causes contacting with electrolyte, and this variation will be modulated channel current by capacitive coupling.For example, through the appropriate condition (electrolytical pH value) of adjusting under, also can be charged such as other biological molecules such as protein, that is to say, electronic sensor is converted into change in electric the variation of electrolyte solution intermediate ion concentration.
In Fig. 1, the unsteady grid structure extending is also for another object, and this structure prevents that fluid from carrying out chemical corrosion to transistor.Such protection makes on chip, to comprise control electronic circuit, has so not only protected signal integrity, and makes the biology sensor can be enough little, to be installed in POC application.
With reference to figure 2, summarize the functional of device in the present invention.By with respect to reference (grid) electrode (earthing potential), source electrode and p-type well (being assembled together) being carried out to negative bias, this device is entered in operator scheme.In operating process, measured at the electric current at cathode terminal place, and this electric current is relevant with the density of the DNA molecular existing on the electrode surface being immersed in the electrolyte being held by container.By capacitive coupling with at gate electrode/contrast electrode and negative electrode/source electrode place, electric potential difference (see figure 2) is set, DNA density directly determines again the electric field intensity in raceway groove (that is, the surf zone of the p-type well of gate oxide below).
Can locate to apply extra positive bias anode terminal (not shown), to adjust drain electrode-source voltage.
Can be for detection of many kinds of substance and for various application according to electronic sensor of the present invention, these examples include but not limited to use above-mentioned device scheme in biomedicine to liquid intermediate ion (for example, H+, Na+, Ca++) detection and food quality monitoring application in, detection to biomolecule, and gas detects.For the latter (gas detection), sampling receptacle unnecessities, but surface-functionalized remaining realized sensitivity and committed step targetedly aspect sensing.
According to electronic sensor of the present invention, can manufacture by standard si technology, described standard si technology has developed very ripely and for the manufacture of various semi-conductor electronic devices and circuit, wherein mos field effect transistor (MOSFET) and bipolar junction transistor (BJT) and circuit thereof and system are the examples of knowing most.
List of references
1J.M.Rothberg,W.Hinz,T.M.Rearick,J.Schultz,W.Mileski,M.Davey,J.H.Leamon,K.Johnson,M.J.Milgrew,M.Edwards,J.Hoon,J.F.Simons,D.Marran,J.W.Myers,J.F.Davidson,A.Branting,J.R.Nobile,B.P.Puc,D.Light,T.A.Clark,M.Huber,J.T.Branciforte,I.B.Stoner,S.E.Cawley,M.Lyons,Y.Fu,N.Homer,M.Sedova,X.Miao,B.Reed,J.Sabina,E.Feierstein,M.Schorn,M.Alanjary,E.Dimalanta,D.Dressman,R.Kasinskas,T.Sokolsky,J.A.Fidanza,E.Namsaraev,K.J.McKernan,A.Williams,G.T.Roth,J.Bustillo,“An?integrated?semiconductor?device?enabling?non-optical?genome?sequencing”,Nature475,348-352(2011).
2P.Bergveld,“Development?of?an?Ion-Sensitive?Solid-State?Device?for?Neurophysiological?Measurements”,IEEE?Trans.Biomed.Eng.BME-17,70-71(1970);R.E.G.van?Hal,J.C.T.Eijkel,P.Bergveld,“A?general?model?to?describe?the?electrostatic?potential?at?electrolyte?oxide?interfaces”,Adv.Coll.Interf.Sci.69,31-62(1996).
3Y.Cui,Q.Q.Wei,H.K.Park,C.M.Lieber,“Nanowire?nanosensors?for?highly?sensitive?and?selective?detection?of?biological?and?chemical?species”,Science293,1289-1292(2001).
4G.Zheng,F.Patolsky,Y.Cui,W.U.Wang,C.M.Lieber,“Multiplexed?electrical?detection?of?cancer?markers?with?nanowire?sensor?arrays”,Nat.Biotechnol.23,1294-1301(2005).
5E.Stern,J.F.Klemic,D.A.Routenberg,P.N.Wyrembak,D.B.Turner-Evans,A.D.
Claims (9)
1. an electronic sensor, comprise mos field effect transistor MOSFET, described MOSFET and bipolar junction transistor BJT merge, it is characterized in that, the emitter of described BJT, base stage and collector form the face-to-face basalis of horizontal expansion layer and vertical continuous, wherein, the vertical stretch in the base layer of described BJT divides the drain electrode that forms described MOSFET.
2. electronic sensor according to claim 1, it is characterized in that, described collector has vertical stretch and divides, and the source electrode of described MOSFET is through arranging so that between the described vertical stretch of at least a portion in dividing of the described vertical stretch in described collector in described source electrode and described base stage/drain electrode divide, and MOSFET raceway groove will be formed near the upper surface of vertical component of described collector like this.
3. electronic sensor according to claim 1, is characterized in that, it is symmetrical that described electronic sensor divides with respect to the described vertical stretch of described base stage/drain electrode, and dual combined type MOSFET/BJT is provided by this.
4. electronic sensor according to claim 1, is characterized in that, the Semiconductor substrate that described MOSFET and BJT are used is silicon substrate.
5. electronic sensor according to claim 1, is characterized in that, the Semiconductor substrate that described MOSFET and BJT are used is silicon carbide substrates.
6. electronic sensor according to claim 1, is characterized in that, the gate electrode of described MOSFET is floating gate electrode, and described electronic sensor comprises sampling receptacle, and described floating gate electrode is connected with sampling receptacle.
7. electronic sensor according to claim 6, it is characterized in that, in described sampling receptacle, contain electrolyte solution, described electronic sensor is converted into change in electric the variation of described electrolyte solution intermediate ion concentration, and described change in electric is further amplified by the combination of described MOSFET and described BJT.
8. electronic sensor according to claim 1, is characterized in that, the gate electrode of described MOSFET is floating gate electrode, described floating gate electrode surface coverage functionalization film.
9. electronic sensor according to claim 8, it is characterized in that, described electronic sensor changes generation change in electric by the surface conjunction of described functionalization film and gas molecule or ion, and described change in electric is further amplified by the combination of described MOSFET and described BJT.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957866A (en) * | 2016-05-04 | 2016-09-21 | 上海小海龟科技有限公司 | Semiconductor biosensor and preparation method thereof |
| US20160370313A1 (en) * | 2015-06-17 | 2016-12-22 | Qualcomm Incorporated | Current sensors using bipolar transistors |
| TWI661568B (en) * | 2017-10-05 | 2019-06-01 | 國立清華大學 | Sensing device and biological detection method |
| CN110672700A (en) * | 2019-10-18 | 2020-01-10 | 广东省半导体产业技术研究院 | Biological electronic chip and manufacturing method thereof |
| WO2020229899A1 (en) * | 2019-05-16 | 2020-11-19 | International Business Machines Corporation | Dual surface charge sensing biosensor |
| CN112567238A (en) * | 2018-06-22 | 2021-03-26 | 洛桑联邦理工学院 | Field effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0372391A2 (en) * | 1988-12-02 | 1990-06-13 | Hitachi, Ltd. | Lateral insulated gate bipolar transistor |
| CN1782709A (en) * | 2004-12-02 | 2006-06-07 | 中国科学院电子学研究所 | Detecting system and its detecting method for multi path TRA1L receptors |
| US20110204455A1 (en) * | 2010-02-19 | 2011-08-25 | Kyungpook National University Industry Academic Cooperation Foundation | Hydrogen ion sensing device using of arrayed gated lateral bjt |
-
2013
- 2013-04-11 CN CN201310125620.3A patent/CN103675073B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0372391A2 (en) * | 1988-12-02 | 1990-06-13 | Hitachi, Ltd. | Lateral insulated gate bipolar transistor |
| CN1782709A (en) * | 2004-12-02 | 2006-06-07 | 中国科学院电子学研究所 | Detecting system and its detecting method for multi path TRA1L receptors |
| US20110204455A1 (en) * | 2010-02-19 | 2011-08-25 | Kyungpook National University Industry Academic Cooperation Foundation | Hydrogen ion sensing device using of arrayed gated lateral bjt |
Non-Patent Citations (2)
| Title |
|---|
| HENG YUAN等: "MOSFET–BJT hybrid mode of the gated lateral bipolar junction transistor for C-reactive protein detection", 《BIOSENSORS AND BIOELECTRONICS》 * |
| HIDEYUKI FUNAKI等: "Multi-Channel SOI Lateral IGBTS with Large SOA", 《POWER SEMICONDUCTOR DEVICES AND IC"S, 1997. ISPSD"97，IEEE INTERNATIONAL SYMPOSIUM ON. IEEE》 * |
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| US20160370313A1 (en) * | 2015-06-17 | 2016-12-22 | Qualcomm Incorporated | Current sensors using bipolar transistors |
| CN107636453A (en) * | 2015-06-17 | 2018-01-26 | 高通股份有限公司 | Use the current sensor of bipolar transistor |
| US10488365B2 (en) | 2015-06-17 | 2019-11-26 | Qualcomm Incorporated | Current sensors using bipolar transistors |
| CN105957866A (en) * | 2016-05-04 | 2016-09-21 | 上海小海龟科技有限公司 | Semiconductor biosensor and preparation method thereof |
| CN105957866B (en) * | 2016-05-04 | 2018-02-16 | 上海小海龟科技有限公司 | Semiconductor biosensor and preparation method thereof |
| TWI661568B (en) * | 2017-10-05 | 2019-06-01 | 國立清華大學 | Sensing device and biological detection method |
| US10605769B2 (en) | 2017-10-05 | 2020-03-31 | National Tsing Hua University | Sensing device and biological detection method |
| CN112567238A (en) * | 2018-06-22 | 2021-03-26 | 洛桑联邦理工学院 | Field effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid |
| WO2020229899A1 (en) * | 2019-05-16 | 2020-11-19 | International Business Machines Corporation | Dual surface charge sensing biosensor |
| US10900952B2 (en) | 2019-05-16 | 2021-01-26 | International Business Machines Corporation | Dual surface charge sensing biosensor |
| CN113785193A (en) * | 2019-05-16 | 2021-12-10 | 国际商业机器公司 | Double-surface charge induction biosensor |
| GB2599523A (en) * | 2019-05-16 | 2022-04-06 | Ibm | Dual surface charge sensing biosensor |
| CN113785193B (en) * | 2019-05-16 | 2022-12-27 | 国际商业机器公司 | Double-surface charge induction biosensor |
| GB2599523B (en) * | 2019-05-16 | 2022-12-28 | Ibm | Dual surface charge sensing biosensor |
| CN110672700A (en) * | 2019-10-18 | 2020-01-10 | 广东省半导体产业技术研究院 | Biological electronic chip and manufacturing method thereof |
| CN110672700B (en) * | 2019-10-18 | 2022-06-03 | 广东省半导体产业技术研究院 | Biological electronic chip and manufacturing method thereof |
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