CN103674974B - Testing fixture - Google Patents
Testing fixture Download PDFInfo
- Publication number
- CN103674974B CN103674974B CN201310203802.8A CN201310203802A CN103674974B CN 103674974 B CN103674974 B CN 103674974B CN 201310203802 A CN201310203802 A CN 201310203802A CN 103674974 B CN103674974 B CN 103674974B
- Authority
- CN
- China
- Prior art keywords
- photographed images
- battery cell
- solar battery
- thickness
- antireflection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Photovoltaic Devices (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention relates to a kind of testing fixture, even if also defects detection can be carried out accurately when the situation of the thickness inequality of antireflection film.This appearance inspection device (testing fixture) comprising: Lighting Division, is configured to irradiate illumination light with the multiple illumination look with mutually different wavelength region may; Image pickup part, uses illumination light shooting solar battery cell; And control part, for multiple illumination look each and obtain the photographed images of solar battery cell, and according to solar battery cell to the reflection strength of illumination light of various illumination look or the thickness of antireflection film, and from the photographed images of various illumination look, select the image for checking, and based on selected photographed images, solar battery cell is checked.
Description
Technical field
The present invention relates to a kind of testing fixture, particularly relate to the testing fixture of a kind of solar battery cell (cell).
Background technology
In the past, the testing fixture of solar battery cell was well known (for example, referring to patent documentation 1).
The appearance inspection device having a kind of solar battery cell is disclosed in above-mentioned patent documentation 1, comprise: lighting device, the irradiation illumination light of wavelength of region of ultra-red and charge-coupled image sensor (chargecoupleddevice, CCD) camera (camera) (image pickup part) near infrared region sensitivity.The infrared transmission of irradiating from lighting device crosses solar battery cell, but when the situation of the inside existing defects (crack (crack)) of solar battery cell, at defective part periphery, infrared light spreads because of generation refraction or diffraction.Thus, solar battery cell inside defect part as the signal intensity utilized in the photographed images of charge-coupled device camera difference (light and shade) and be detected.
In addition, for suppressing the reflection being incident to the light of substrate (unit) to seek high efficiency, and antireflection film is formed with on the surface of solar battery cell.The defect (pin hole (pinhole) or attachment foreign matter) of this antireflection film also can have influence on the characteristic of solar battery cell, therefore not only detect above-mentioned inherent vice in the past, also detected the defect (surface inspection) of antireflection film by visual examination.When carrying out the situation of visual examination of antireflection film, irradiate the illumination light of the wavelength of visible region, and shooting is at the reflected light of solar battery cell surface reflection.Solar battery cell to the reflection strength of vertical incidence light, at film interference in theory, the specific wavelength λ=4nd determined relative to refractive index n and the thickness d by antireflection film and be 0.For system of crystallization solar cell, be formed with antireflection film at refractive index n=about 2.0 ~ about 2.1, thickness d=under being about the membrance casting condition of about 80nm, the reflection strength under the wavelength of the red area of 4nd=640nm ~ 672nm reaches minimum.
When carrying out the situation of visual examination (surface inspection) to the system of crystallization solar battery cell being formed with this antireflection film, if the illumination light using reflection strength to reach minimum red area carries out the shooting of cell surface, then illumination light reflects hardly, only at defect (pin hole or attachment foreign matter) part indirect illumination light, therefore defective part can be detected as the bright spot in photographed images.
[prior art document]
[patent documentation]
[patent documentation 1] Japanese Patent Laid-Open 2007-78404 publication
Because the defect that above-mentioned existing testing fixture exists, the present inventor is based on being engaged in the practical experience and professional knowledge that this type of product design manufacture enriches for many years, and coordinate the utilization of scientific principle, actively in addition research and innovation, to founding a kind of novel testing fixture, general existing testing fixture can be improved, make it have more practicality.Through constantly research, design, and through repeatedly studying sample and after improving, finally creating the present invention had practical value.
Summary of the invention
But, because the various factors in the manufacturing step of solar battery cell causes the thickness of antireflection film to produce inequality.The thickness (d) of antireflection film is compared with the thickness in design during vicissitudinous situation, reflection strength reaches minimum specific wavelength (λ=4nd) and also changes, therefore reach minimum specific wavelength for the wavelength of illumination light that checks and reflection strength and produce deviation, thus the reflection strength of illumination light on solar battery cell increases.Therefore, if carry out visual examination to the solar battery cell of the thickness inequality of antireflection film, then not only photograph the reflected light of defective part, also photograph the reflected light at the position beyond from defective part in the lump, its result, the bright spot of defective part is difficult to identification in photographed images, there is the problem being difficult to the defective part detecting antireflection film according to photographed images thus.
The present invention is for solving the problem and completing, an object of the present invention is to provide a kind of testing fixture, even if also defects detection can be carried out accurately when technical matters to be solved is its situation in the thickness inequality of antireflection film, thus be more suitable for practicality.
For reaching above-mentioned purpose, the object of the invention to solve the technical problems realizes by the following technical solutions.A kind of testing fixture proposed according to the present invention is the testing fixture of the solar battery cell being formed with antireflection film, comprising: Lighting Division, is configured to irradiate illumination light with the multiple illumination look with mutually different wavelength region may; Image pickup part, uses illumination light shooting solar battery cell; And control part, for multiple illumination look each and obtain the photographed images of solar battery cell, and according to solar battery cell to the reflection strength of illumination light of various illumination look or the thickness of antireflection film, and from the photographed images of various illumination look, select the image for checking, and based on selected photographed images, solar battery cell is checked.
Be provided with as a kind of testing fixture of the present invention is described above: Lighting Division, be configured to irradiate illumination light with the multiple illumination look with mutually different wavelength region may, and control part, for multiple illumination look each and obtain the photographed images of solar battery cell, and according to solar battery cell to the reflection strength of illumination light of various illumination look or the thickness of antireflection film, and from the photographed images of various illumination look, select the image for checking, and based on selected photographed images, solar battery cell is checked, even if thus when the situation of the thickness inequality of antireflection film, also image can be selected from using the photographed images of the illumination light shooting of the different multiple color of wavelength region may, this image is the image utilizing the illumination light of the wavelength region may (illumination look) corresponding with the reflection strength of solar battery cell or the thickness of antireflection film to make a video recording.Thus, the choice for use illumination light that can detect the illumination look (wavelength) of the defective part accurately photographed images of taking visual examination can be carried out, even if therefore when the situation of the thickness inequality of antireflection film, also defects detection can be carried out accurately.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
In above-mentioned a kind of testing fixture, preferred control part is configured to: from multiple photographed images of various illumination look, signal intensity based on the photographed images of the various illumination looks of reflection reflection strength selects photographed images, or selects photographed images based on the thickness of antireflection film.If formed in this way, then cause the reflection strength of solar battery cell to each wavelength to change because of the inequality of thickness, result, the signal intensity (light and shade) of the photographed images of being taken by the illumination light of each color produces difference, therefore easily can select the photographed images of the illumination look that can detect defective part accurately based on the signal intensity of photographed images.In addition, the reflection strength of solar battery cell described above reaches minimum wavelength, by have regulation refractive index antireflection film thickness determine, therefore easily can select the photographed images of the illumination look that can detect defective part accurately based on the thickness of antireflection film.
During this situation, preferred multiple illumination look at least comprises redness and blueness.Described above be formed with the situation of antireflection film with the membrance casting condition of about about 80nm (n=about 2.0) time, the lower limit (permissible range) as the film thickness range that should consider can be set to about 60nm.During this situation, when thickness is thicker 80nm, the reflection strength of red light reaches minimum, on the other hand, thickness thin and be about 60nm and the situation of inequality time, the reflection strength of the blue light of λ=480nm ~ 504nm diminishes.Therefore, according to the present invention, by at least comprising redness and blueness in illumination look, can according to the scope of in fact issuable thickness inequality, and at least from the photographed images of the blue light when photographed images of the red light during situation that thickness is thick and the thin situation of thickness, select the photographed images being suitable for the detection of defective part.
At least comprise in the formation of redness and blueness at above-mentioned multiple illumination look, preferred control part is configured to: the photographed images selecting signal intensity lower from multiple photographed images of various illumination look, or selects the photographed images of the illumination look corresponding with the thickness of antireflection film.If formed in this way, the photographed images that then signal intensity is lower is the photographed images of the illumination look (wavelength) of the specific wavelength diminished close to reflection strength, therefore easily can select the photographed images of the detection being suitable for defective part by selecting this image.In addition, if make the thickness of antireflection film be associated with the illumination look of photographed images, then by selecting the image of the illumination look corresponding with thickness, and the photographed images of the detection being suitable for defective part is easily selected.
In above-mentioned a kind of testing fixture, preferred control part is configured to: use the decision threshold corresponding with the illumination look of selected photographed images, carry out defect inspection to the antireflection film be formed on solar battery cell.If formed in this way, the inequality of the signal intensity then in photographed images or the power of signal intensity, the grade (level) of average signal strength etc. of bright spot that manifest as defective part change according to illumination look, thus by using the decision threshold with illumination look corresponding, regardless of when selecting the situation of photographed images of which kind of illumination look, all defects detection can be carried out accurately.
In above-mentioned a kind of testing fixture, preferred control part is configured to: the station diagram picture multiple position of solar battery cell being obtained respectively to various illumination look, and for solar battery cell each position and select the station diagram picture for checking and check based on selected station diagram picture.
If formed in this way, even if during the situation of the thickness inequality of the antireflection film then on each position of solar battery cell, also can select the photographed images of the illumination look being suitable for defects detection for each position and carry out defects detection, therefore precision can carry out defects detection higher.If especially the size of solar battery cell becomes large, then the thickness of the antireflection film on each position is easy to uneven, thus the present invention is suitable for the inspection of large-scale solar battery cell.
Select in the formation of the photographed images of photographed images that signal intensity is lower or the illumination look corresponding with the thickness of antireflection film at above-mentioned control part, preferred control part is configured to: compare the mean value of the signal intensity of multiple photographed images or intermediate value, and selects the photographed images of mean value or the minimum illumination look of intermediate value.If formed in this way, then need not calculate the thickness of antireflection film, the mean value (or intermediate value) by means of only the signal intensity of multiple photographed images of more different illumination look just can easily select the photographed images being suitable for defects detection.
Select in the formation of the photographed images of photographed images that signal intensity is lower or the illumination look corresponding with the thickness of antireflection film at above-mentioned control part, preferred control part is configured to: by illumination light wavelength and the reflection strength of solar battery cell and the matching (fitting) of theoretical curve, and obtain the thickness of the antireflection film with the signal intensity of the photographed images of various illumination look corresponding, and select the photographed images of the illumination look corresponding with the film thickness range of the regulation of the thickness comprising obtained antireflection film.If formed in this way, then obtain the thickness of antireflection film accurately by the theoretical curve that calculates for each thickness and the matching of the curve (measured value) of the signal intensity obtained from each photographed images.And, by presetting film thickness range and the illumination look being suitable for the defects detection in this film thickness range, and can select according to obtained thickness the photographed images being suitable for defects detection.
Select in the formation of the photographed images of photographed images that signal intensity is lower or the illumination look corresponding with the thickness of antireflection film at above-mentioned control part, preferred control part is configured to: use the reference data (data) the various reflection strength of illumination look be associated with the thickness of antireflection film, obtain the thickness of the antireflection film corresponding with the signal intensity of photographed images, and select the photographed images of the illumination look corresponding with the film thickness range of the regulation of the thickness comprising obtained antireflection film.If formed in this way, then by being pre-created the reference data various reflection strength of illumination look be associated with the thickness of antireflection film, the thickness of antireflection film easily can be obtained from the measured value of the signal intensity obtained according to each photographed images.In addition, by presetting film thickness range and the illumination look being suitable for the defects detection in this film thickness range, can easily select from obtained thickness the photographed images being suitable for defects detection.
In above-mentioned a kind of testing fixture, preferred multiple illumination look comprises redness, blueness and green.As mentioned above, for the antireflection film of about refractive index n=2.0, when thickness is 80nm, the reflection strength of red light reaches minimum, when thickness is about 60nm, the reflection strength of blue light diminishes, and when thickness is about 70nm, the reflection strength of green light diminishes.Therefore, according to the present invention, by comprising redness, blueness and green in illumination look, the photographed images of the detection being suitable for defective part can be selected according to the scope of in fact issuable thickness inequality.In addition, carry out the thickness of specific antireflection film by red, blue and green trichromatic signal intensity ratio, therefore easily can carry out the photographed images of the detection selecting to be suitable for defective part.
In above-mentioned a kind of testing fixture, preferred solar battery cell comprises poly semiconductor, and antireflection film is silicon nitride (siliconnitride) film.In this polymorphic solar battery cell, show crystal grain boundary clearly reaching in the photographed images of the different illumination look of minimum wavelength (illumination look) from reflection strength, defective part is submerged in crystal boundary picture and cannot detects.In addition, this polymorphic solar battery cell uses silicon nitride film as antireflection film mostly.Testing fixture of the present invention can preferably for the formation of the visual examination of polymorphic solar battery cell having silicon nitride film.
The present invention compared with prior art has obvious advantage and beneficial effect.By technique scheme, the present invention at least has following advantages: according to the present invention, as mentioned above, even if also can carry out defects detection accurately when the situation of the thickness inequality of antireflection film.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that the entirety of the appearance inspection device representing the 1st embodiment of the present invention and the 2nd embodiment is formed.
Fig. 2 schematically shows the 1st embodiment of the present invention and the image pickup part of appearance inspection device of the 2nd embodiment and the stereographic map of the formation of Lighting Division.
Fig. 3 (a), Fig. 3 (b), Fig. 3 (c) are the figure of the example of the photographed images representing image pickup part.
Fig. 4 is the figure of reflectivity (the reflection strength)-wavelength curve of the 2nd system of selection representing to illustrate photographed images.
Fig. 5 is the figure of reflectivity (the reflection strength)-thickness curve of the 3rd system of selection representing to illustrate photographed images.
Fig. 6 (a), Fig. 6 (b) are the figure of the defect inspection process of the appearance inspection device that the 1st embodiment of the present invention and the 2nd embodiment are described.
The process flow diagram of the control treatment of control part when Fig. 7 is the inspection of the appearance inspection device that the 1st embodiment of the present invention is described.
Fig. 8 is the figure of the example of the station diagram picture of the check processing of the appearance inspection device represented for the 2nd embodiment of the present invention.
The process flow diagram of the control treatment of control part when Fig. 9 is the inspection of the appearance inspection device that the 2nd embodiment of the present invention is described.
[main element symbol description]
1: solar battery cell
2: semiconductor substrate (poly semiconductor)
3: antireflection film
10: Lighting Division
11: light source
11a: red light source
11b: green light source
11c: blue-light source
12: maintaining part
13: peristome
20: image pickup part
21: lens
30,230: control part
31: storage part
40: framework
60,60a, 60b, 60c: photographed images
70: defective part
80: station diagram picture
100,200: appearance inspection device (testing fixture)
110: transporter
D: thickness
Th: decision threshold
Cf: reflectance versus wavelength curve
Ac: curve of approximation
Ia: the mean value (or intermediate value) of signal intensity
Xa: the position of the peak value of the signal intensity larger than decision threshold
X1, X2, X3, X4, Y1, Y2, Y3, Y4: position
S1 ~ S11, S21 ~ S34: step
Embodiment
For further setting forth the present invention for the technological means reaching predetermined goal of the invention and take and effect, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of testing fixture proposed according to the present invention, structure, feature and effect thereof, be described in detail as follows.
(the 1st embodiment)
First, with reference to Fig. 1, the entirety formation of the appearance inspection device 100 of the 1st embodiment of the present invention is described.In 1st embodiment, the example applying the present invention to the appearance inspection device 100 that the defect (surface imperfection of solar battery cell) to the antireflection film be formed on the surface of solar battery cell checks is described.
The appearance inspection device 100 of the 1st embodiment to arrange in the production stage of solar battery cell 1 on a production line and (inline) carries out the testing fixture that checks on line.Solar battery cell 1 comprises: semiconductor substrate 2 (hereinafter referred to as substrate 2); And antireflection film 3, be formed on the surface (sensitive surface) of substrate 2.In addition, in Fig. 1, conveniently, the thickness of solar battery cell 1 amplified and schematically show each layer (substrate 2 and antireflection film 3).Antireflection film 3 is dielectric (insulator) film of the light not absorbing in fact visible region, uses and has required refractive index and the material that can be formed with required thickness.In 1st embodiment, substrate 2 is such as polysilicon semiconductor substrate, and antireflection film 3 is SiN film (refractive index n=about 2.0 ~ 2.1).In addition, the surface electrode (not shown) of predetermined pattern (pattern) is formed on the surface of solar battery cell 1.Utilize the defect inspection that appearance inspection device 100 pairs of antireflection films carry out, also can the arbitrary step before and after the forming step of surface electrode implement.
Appearance inspection device 100 mainly comprises: Lighting Division 10, irradiates illumination light to solar battery cell 1; Image pickup part 20, uses the illumination light of being irradiated by Lighting Division 10 to take solar battery cell 1; And control part 30, implement defect inspection process based on captured photographed images.Described each several part is accommodated in framework 40, this framework 40 check solar battery cell 1 time in order to cover the light from outside.
As shown in Figure 2, Lighting Division 10 is arranged in the mode being positioned at the top being configured in the solar battery cell 1 checked on position.Lighting Division 10 comprises: multiple light source 11 (11a ~ 11c); And the maintaining part 12 of arcuation (dome), in inwall bottom, circumferentially shape (ring-type) keeps multiple light source 11.
Each light source 11 such as comprises light emitting diode (lightemittingdiode, LED), and light direction of illumination is (the inwall direction of maintaining part 12) upward.These multiple light sources 11 comprise redness (red, R) light source 11a, green (green, G) light emitting diode of 3 kinds of illumination looks of light source 11b and blueness (blue, B) light source 11c, is arranged side by side in the mode along the circumferential direction repeated in this order.Each illumination look is such as centre wavelength is respectively about 627nm (redness), about 530nm (green) and about 470nm (blueness).As shown in Figure 1, each light source 11 controls luminescence by control part 30 according to various illumination look.Thus, Lighting Division 10 is configured to irradiate the illumination light of the multiple illumination look (R, G and B) with mutually different wavelength region may.
As shown in Figure 2, the inwall of arcuation maintaining part 12 is provided with diffusion reflector (not shown).Light from the light source 11 irradiated towards inwall carries out scattered reflection at the inwall of maintaining part 12, and as homogeneous illumination to the whole surface of solar battery cell 1 being configured in lower position.In addition, in the top upper part of maintaining part 12, be formed for the peristome 13 to image pickup part 20 leaded light.
As shown in Figures 1 and 2, image pickup part 20 is configured in the top position of Lighting Division 10, receives and takes solar battery cell 1 by the reflected light of the peristome 13 of maintaining part 12 and the solar battery cell 1 of lens (lens) 21.Image pickup part 20 is such as made up of the charge-coupled device camera of monochrome (monochrome) 5,000,000 pixel (about 2000 × 2500 pixel).In addition, the entirety of solar battery cell 1 such as uses the square shape for about 156mm and the lens 21 of focal length=about 25mm are taken.
The entirety of control part 30 to the appearance inspection device 100 comprising Lighting Division 10 and image pickup part 20 carries out control treatment.In control part 30, be provided with storage part 31, this storage part 31 stores the various data (decision threshold Th described later or decision condition etc.) of the photographed images 60 (with reference to Fig. 3 (a), Fig. 3 (b), Fig. 3 (c)) of image pickup part 20 or the inspection for solar battery cell 1.In addition, control part 30 is configured to communicate with the transporter (conveyor) 110 in the production line being assembled into solar battery cell 1, has been positioned in the communication of the situation on the inspection position of regulation and implements check processing based on the solar battery cell 1 from transporter 110.In 1st embodiment, control part 30 all obtains the photographed images 60 (with reference to Fig. 3 (a), Fig. 3 (b), Fig. 3 (c)) of solar battery cell 1 for 3 kinds (R, G, B) throw light on each of look, and according to the thickness d of solar battery cell 1 to the reflection strength of the illumination light of each color or antireflection film 3, and from the photographed images 60 of various illumination look, select the image for checking.Then, control part 30 is configured to carry out surface imperfection inspection based on selected photographed images 60 to solar battery cell 1.The surface imperfection inspection of solar battery cell 1, be specifically the inspection of the defective part 70 of the antireflection film 3 of the cell surface shown in Fig. 1, the defective part 70 of antireflection film 3 is such as the pin hole be formed on antireflection film 3 or the foreign matter etc. be attached on antireflection film 3.
Secondly, be described with reference to Fig. 3 (a), Fig. 3 (b), Fig. 3 (c) ~ Fig. 6 (a), Fig. 6 (b) details to the check processing of solar battery cell 1.
Be formed in the solar battery cell 1 of antireflection film 3, theoretical according to film interference, the reflection strength of the light of the specific wavelength λ=4nd corresponding with the refractive index n of antireflection film 3 and thickness d significantly reduces (reflection strength becomes 0 in theory).In 1st embodiment, the thickness d (in design) of antireflection film 3 is set as about 80nm.During this situation, for being formed with d=and being about the solar battery cell 1 of the antireflection film 3 (n=2.0 ~ 2.1) of 80nm, the reflection strength of the red light of the wavelength domain of specific wavelength λ (=4nd)=640nm ~ 672nm reduces, its result, appears as the tone with blueness in appearance.
If use the illumination light of red (about 627nm) to take this solar battery cell 1, then can obtain the photographed images 60 (60a) shown in Fig. 3 (a).That is, the reflection strength due to red light is minimum, so the roughly overall signal intensity of solar battery cell 1 is low, its image becomes dark image.Now, when antireflection film 3 exists the situation of the defect of pin hole or attachment foreign matter etc., reflection strength in defective part 70 (with white point diagram in Fig. 3 (a), Fig. 3 (b), Fig. 3 (c)) does not reduce, and defective part 70 is manifest as the region (bright spot) that signal intensity is high in photographed images 60a thus.When using the photographed images 60a shown in Fig. 3 (a) to carry out the situation of defect inspection, the difference of the signal intensity of the part beyond the bright spot of defective part 70 and defective part 70 very greatly, therefore can carry out defect inspection accurately.
But if cause the thickness d of the antireflection film 3 of unit to produce because of the various factors on the production stage of solar battery cell 1 uneven, then the specific wavelength λ that reflection strength reduces also corresponds to thickness d and changes.Such as, when the situation of thickness d=60nm, the reflection strength of the blue light of the wavelength domain of specific wavelength λ=480nm ~ 504nm reduces.During this situation, if use the illumination light of identical redness (about 627nm) to take, then the reflection strength of red light does not reduce, as Suo Shi Fig. 3 (c), therefore obtain the bright photographed images 60 (60c) of the crystal grain boundary of the substrate 2 wherein shown clearly as the substrate of antireflection film 3.In this photographed images 60c, the bright spot of defective part 70 is difficult to identification in crystal boundary picture, and the difference performance of signal intensity is indefinite, thus is difficult to defect recognition portion 70.In addition, when the wavelength domain of the extremely close green of the wavelength with redness becomes the situation of specific wavelength λ (about 4nd=530nm), the photographed images of red light is used to become the photographed images 60 (60b) of the signal intensity of the intermediate degree of the photographed images 60a shown in Fig. 3 (b) and photographed images 60c.As above, cause specific wavelength λ to change because of the inequality of thickness d, therefore for the photographed images 60 of just single red light, defect inspection cannot be carried out accurately.
Thus, in 1st embodiment, control part 30 all obtains the photographed images 60 of solar battery cell 1 for multiple (R, G, B) throw light on each of look, and according to the thickness d of solar battery cell 1 to the reflection strength of the illumination light of each color or antireflection film 3, and from the photographed images 60 of various illumination look, select the image for checking.The system of selection of photographed images 60 adopts suitable system of selection from the 1st following system of selection ~ the 3rd system of selection.
1st system of selection is following method, and the signal intensity namely based on the photographed images 60 of the various illumination looks of reflection reflection strength selects photographed images 60.Control part 30, from 3 (R, G, B) photographed images 60 of various illumination look, selects the photographed images 60 that signal intensity is lower.More specifically, control part 30 compares the mean value of the signal intensity of 3 photographed images 60 or intermediate value, and selects the photographed images 60 of mean value or the minimum illumination look of intermediate value.Thus, as mentioned above in the example of the situation of specific wavelength λ=640nm ~ 672nm (thickness d=80nm), the photographed images of red light becomes the photographed images 60a of Fig. 3 (a), the photographed images of green light becomes the photographed images 60b of Fig. 3 (b), and the photographed images of blue light becomes the photographed images 60c as Fig. 3 (c).The image that the mean value (intermediate value) of signal intensity is minimum becomes the photographed images 60 of red light, therefore selects the photographed images 60 (60a) being suitable for the red light of defect inspection.In addition, if be the situation of specific wavelength λ=480nm ~ 504nm (thickness d=60nm), then the photographed images of blue light is taken as the photographed images 60a of Fig. 3 (a), therefore selects the image of blue light as the minimum image of the mean value (intermediate value) of signal intensity.
2nd system of selection and the 3rd system of selection are following method, and the thickness d namely based on antireflection film 3 selects photographed images 60.As mentioned above, if make refractive index n be fixing, then the specific wavelength λ making the reflection strength of solar battery cell 1 reduce depends on the thickness d of antireflection film 3.Therefore, if thickness d can be obtained, then specific wavelength λ can be determined.And, if choice for use closest to the photographed images 60 of the illumination light of the wavelength (illumination look) of specific wavelength λ, then can select the photographed images 60a being suitable for defect inspection from 3 photographed images 60.
In 2nd system of selection, control part 30 by illumination light wavelength and the reflection strength of solar battery cell 1 and the matching of theoretical curve, and obtains the thickness d of antireflection film 3.Reflection strength is the formula based on the Fresnel considering interference condition (Fresnel), and by reflectivity=f (λ, θ, n, k, d, n
si, k
si) and so on the function of various parameters show.Herein, λ, θ, n, k, d, n
siand k
sibe respectively the wavelength of illumination light, incident angle, the refractive index of antireflection film, the extinction coefficient (extinctioncoefficient) of antireflection film, thickness, the refractive index of silicon substrate and extinction coefficient.According to the physical property of antireflection film 3 and substrate 2, N, k, n
si, k
sibe respectively known, as long as setting thickness d and incidence angle θ, then can obtain with wavelength is the reflectivity (reflection strength) of parameter.If carry out this setting for various thickness d, then can obtain reflectivity (the reflection strength)-wavelength curve Cf (d=d1, d2, d3...) under each thickness d shown in Fig. 4.
Control part 30 is according to the photographed images 60 of 3 kinds of colors, reflection strength (i.e. the signal intensity of photographed images 60) under each wavelength is drawn (plot) on Fig. 4, and the curve (curvefitting) of reflectance versus wavelength curve C f under carrying out connecting the curve of approximation Ac of 3 of gained and each thickness d.Its result, such as, by least square method, can determine the thickness d of thickness as antireflection film 3 of the reflectance versus wavelength curve C f that curve of approximation Ac is the most consistent.In addition, the corresponding relation of film thickness range and illumination look is preset (such as in the storage part 31 of control part 30, if be d=70nm ~ 90nm, carry out red illumination, if be 60nm ~ 65nm, carry out blue illumination, if be 65nm ~ 70nm, carry out green illumination etc.).If obtain thickness d, then based on the corresponding relation of the film thickness range preset with illumination look, and the photographed images 60 of the illumination look corresponding with the film thickness range belonging to obtained thickness d can be selected.
In 3rd system of selection, control part 30 uses the reference data (typical curve (the standardcurve)) reflection strength of various illumination look be associated with the thickness d of antireflection film 3 to obtain the thickness d of antireflection film 3.In the theory calculate identical with the 2nd system of selection, being fix and make thickness d take parameter by making wavelength X, reflectivity (the reflection strength)-thickness curve C s (R, G, B) under the wavelength X (627nm (redness), 530nm (green) and 470nm (blueness)) of the various illumination looks shown in Fig. 5 can be calculated.If the signal intensity of the photographed images 60 of 3 kinds of colors to be suitable for the value of the reflectivity of the correspondence making each reflectivity-thickness curve C s, then can obtain thickness d.Or reflectivity-thickness curve C s (B) blue in the scope of about 60nm ~ about 100nm in Fig. 5 is in line shape, therefore also can obtain corresponding thickness d according to the signal intensity of the photographed images 60 of blue light.After acquisition thickness d, in the same manner as above-mentioned 2nd system of selection, control part 30 selects photographed images 60 based on the film thickness range be pre-set in storage part 31 and the corresponding relation of illumination look.
By using the either method in above 1st system of selection ~ the 3rd system of selection, control part 30 selects the image for checking.Thus, even if when the situation of thickness d inequality, by selecting the photographed images 60 corresponding with the thickness d of the antireflection film 3 on this solar battery cell 1, the photographed images 60a large with the difference in signal strength of the bright spot of defective part 70 can be used as Fig. 3 (a) to implement to check.
Secondly, with reference to Fig. 6 (a), Fig. 6 (b), an example of the defect inspection of the photographed images 60 (60a) selected by use is described.
In photographed images 60a shown in Fig. 6 (a), if be laterally X-axis, and set longitudinally as Y-axis, the signal intensity profile of the X-direction on Y-coordinate Ya is shown in the solid line of Fig. 6 (b).In addition, in Fig. 6 (a), figure is shown with the sectional view of the Ya coordinate of solar battery cell 1 in the lump, and the pin hole of diagram antireflection film 3 is as the example of defective part 70.As shown in Fig. 6 (b), when the situation in existing defects portion 70, its X-coordinate Xa is formed with the large peak value (peak) of signal intensity.On the other hand, in the region beyond defective part 70, although signal intensity has slight variations, become roughly fixing low signal intensity on the whole.Therefore, the decision threshold Th of the slight variations amount of signal intensity is considered in setting, position (Xa) is judged to be defective part 70 by control part 30, mean value (or intermediate value) Ia of the signal intensity that this position (Xa) is overall relative to photographed images 60 (60a) and there is the peak value of the signal intensity larger than decision threshold Th.
By carrying out the detection of this defective part 70 throughout Y-coordinate entirety, and surface imperfection inspection is carried out to the entirety of solar battery cell 1.In defect inspection, not only obtain the number of the defective part 70 in photographed images 60 (60a), also obtain the size (area) etc. of each defective part 70 according to the set of the large pixel region of signal intensity ratio decision threshold Th.
In addition, in the 1st embodiment, decision threshold Th is illumination look according to selected photographed images 60 and sets separately.That is, according to the difference of illumination look, also there is signal intensity and be easy to uprise and the larger situation of deviation ratio (dotted line with reference to Fig. 6 (b)).Therefore, consider the signal intensity of various illumination look or inclined extent, set the suitable decision threshold Th corresponding with the look that throws light on.In addition, the algorithm (algorithm) self of defect inspection process also can be changed for various illumination look.
Secondly, the control treatment with reference to the control part 30 during inspection to the appearance inspection device 100 of the 1st embodiment of Fig. 1, Fig. 6 (a), Fig. 6 (b) and Fig. 7 is described.
First, in step (step) S1, by transporter 110 (with reference to Fig. 1), move into the solar battery cell 1 as check object from the step upstream of production line.When receive be configured in the communication of the situation on the inspection position of regulation from the solar battery cell 1 of transporter 110 time, control part 30 starts check processing action.
In step S2, obtain the photographed images of the illumination light using red (R).That is, control part 30 makes the redness in Lighting Division 10 (R) light source 11a open (on), and is taken by image pickup part 20 pairs of solar battery cells 1.After execution shooting, redness (R) light source 11a is closed (off).
Similarly, in step S3, obtain the photographed images of the illumination light using green (G).Control part 30 sequentially performs the opening of green (G) light source 11b, take and the closedown of green (G) light source 11b.Then, in step S4, obtain the photographed images of the illumination light using blue (B).Control part 30 sequentially performs the opening of blueness (B) light source 11c, take and the closedown of blue (B) light source 11c.By this step S2 ~ step S4, obtain 3 photographed images 60 of the illumination light using 3 kinds of colors respectively.In addition, shooting order (order of step S2 ~ S4) of the photographed images 60 of each color is any.
In step S5, control part 30 uses the either method in above-mentioned 1st system of selection ~ the 3rd system of selection, selects the photographed images 60 (60a) for checking from the photographed images 60 of red (R), green (G) and blue (B).
In step S6, control part 30 read from storage part 31 and select the decision threshold Th with selected illumination look corresponding (check algorithm also according to throw light on look and the situation changed time be decision threshold Th and check algorithm).
Then, in step S7, control part 30 throughout photographed images 60 (60a) whole implementation Fig. 6 (a), Fig. 6 (b) shown in defect inspection process.Control part 30 obtains the number of the defective part 70 detected, the size (area) etc. of each defective part 70 thus.
Secondly, in step S8, judge whether check result meets the decision condition of the regulation differentiating certified products or unacceptable product.
Also one or more decision conditions can be used in judgement.Such as be set with as inferior as decision condition, namely " judge that whether the number of defective part 70 is more than the threshold value (N1) of setting; be judged to be defective time more than individual for N1 ", " judge that whether the total area of defective part 70 is more than the N2% of the entirety of solar battery cell 1; defective for being judged to be during more than N2% ", " for each defective part 70, at area P1 (such as 1mm
2) more than defective part 70 when being the situation of more than N3 (such as 10), or area P2 (such as 5mm
2) more than large-scale defective part 70 when being the situation of more than N4 (such as 1), be judged to be defective ".One or more of above decision condition combinationally use and carry out whether qualified judgement by control part 30.
Control part 30 as when meeting the situation of decision condition (being judged to be underproof condition) in the result judged, enters step S9, judges that the solar battery cell 1 as check object is defective.In addition, control part 30 as when not meeting the situation of decision condition (being judged to be underproof condition), enters step S10 in the result judged, judges that solar battery cell 1 as check object is as certified products.
Thereafter, enter step S11, control part 30 judges that the checking whether of all unit of predetermined inspection (predetermined production) is terminated, when the unclosed situation of the inspection of all unit, returns step S1, performs the inspection of next solar battery cell 1.When control part 30 is judged to be the situation that the inspection of all unit terminated, terminate to check.
In 1st embodiment, as described above by setting: Lighting Division 10, be configured to irradiate illumination light with the illumination look (R, G, B) with 3 kinds of colors of mutually different wavelength region may, and control part 30, the photographed images 60 of solar battery cell 1 is obtained for various illumination look, and according to the reflection strength of solar battery cell 1 to the illumination light of various illumination look or the thickness d of antireflection film 3, and from the photographed images 60 of various illumination look, select the image for checking, and based on selected photographed images 60 (60a), solar battery cell 1 is checked, even if thus when the situation of the thickness d inequality of antireflection film 3, also can from the photographed images 60 of illumination light shooting using the different 3 kinds of colors of wavelength region may, select the photographed images 60a of the illumination light of the wavelength region may (illumination look) corresponding with the reflection strength of solar battery cell 1 or the thickness d of antireflection film 3.Thus, can can detect the photographed images 60a of the illumination light shooting of the illumination look (the illumination look close to the wavelength of specific wavelength λ) of defective part 70 accurately to carry out visual examination by choice for use, even if therefore when the situation of the thickness d inequality of antireflection film 3, also defects detection can be carried out accurately.
In 1st embodiment, form control part 30 as follows as mentioned above, namely from 3 photographed images 60 of various illumination look, the signal intensity based on the photographed images 60 of reflection reflection strength selects photographed images 60a, or selects photographed images 60a based on the thickness d of antireflection film 3.Thus, the reflection strength of solar battery cell 1 to each wavelength is caused to change because of the inequality of thickness d, result, the signal intensity (light and shade) of the photographed images 60 of being taken by the illumination light of each color produces difference, easily can select the photographed images 60a of the illumination look that can detect defective part 70 accurately thus based on the signal intensity of photographed images 60.In addition, the reflection strength of solar battery cell 1 reaches minimum specific wavelength λ, determined by the thickness d of antireflection film 3 of the refractive index n with regulation, therefore easily can select the photographed images 60a of the illumination look that can detect defective part 70 accurately based on the thickness d of antireflection film 3.
In 1st embodiment, form control part 30 as follows as mentioned above, that is, use the decision threshold Th corresponding with the illumination look of selected photographed images 60, defect inspection is carried out to the antireflection film 3 be formed on solar battery cell 1.Thus, the inequality of the signal intensity in photographed images 60 or the power of signal intensity, the grade of average signal strength etc. of bright spot that manifest as defective part 70 change according to illumination look, thus by using the decision threshold Th corresponding with the look that throws light on to carry out defects detection accurately.
In 1st embodiment, form control part 30 as follows, namely as illustrated in above-mentioned 1st system of selection of photographed images 60, the mean value of the signal intensity of multiple photographed images 60 or intermediate value are compared, and select the photographed images 60 of mean value or the minimum illumination look of intermediate value.If formed in this way, then need not calculate the thickness d of antireflection film 3, the mean value (or intermediate value) only contrasting the signal intensity of 3 different photographed images 60 of light colour compares the photographed images 60 just easily can selecting to be suitable for defects detection.
In 1st embodiment, form control part 30 as follows, namely as illustrated in above-mentioned 2nd system of selection of photographed images 60, obtained the thickness d of antireflection film 3 by the matching with reflectance versus wavelength curve C f, and select the photographed images 60 of the illumination look corresponding with the film thickness range of the regulation comprising obtained thickness d.If formed in this way, then by the reflectance versus wavelength curve C f that calculates for each thickness matching with the curve (measured value) of the signal intensity obtained from each photographed images 60, and obtain the thickness d of antireflection film 3 accurately.
In 1st embodiment, form control part 30 as follows, namely as illustrated in above-mentioned 3rd system of selection of photographed images 60, use reflectivity (the reflection strength)-thickness curve C s reflection strength of various illumination look be associated with the thickness d of antireflection film 3, obtain the thickness d of antireflection film 3, and select the photographed images 60 of the illumination look corresponding with the film thickness range of the regulation comprising obtained thickness d.If formed in this way, by being pre-created reflectivity (the reflection strength)-thickness curve C s (R, G, B) of various illumination look, and easily obtain the thickness d of antireflection film 3 according to the measured value of the signal intensity obtained from each photographed images 60.
In 1st embodiment, as mentioned above, multiple illumination look comprises redness (R), blue (B) and green (G).As mentioned above, for the antireflection film 3 of about refractive index n=2.0, when thickness d=80nm, the reflection strength of red light (R) reaches minimum, when about d=60nm, the reflection strength of blue light (B) diminishes, and time before and after d=70nm, the reflection strength of green light (G) diminishes.Therefore, comprise redness, blueness and green by illumination look, the photographed images 60 of the detection being suitable for defective part 70 can be selected according to the scope of in fact issuable thickness inequality.
In 1st embodiment, as mentioned above, solar battery cell 1 comprises poly semiconductor, and antireflection film 3 is silicon nitride film (SiN).For this polymorphic solar battery cell 1, reaching in the photographed images 60 of the different illumination look of minimum specific wavelength λ from reflection strength, as Fig. 3 (c), crystal grain boundary displays clearly, and defective part 70 is submerged in crystal boundary picture and cannot detects.In addition, mostly use silicon nitride film (SiN) as antireflection film 3 to this polymorphic solar battery cell 1, the appearance inspection device 100 of the 1st embodiment, can preferably for the formation of the visual examination having silicon nitride film (SiN) as the polymorphic solar battery cell 1 of antireflection film 3.
(the 2nd embodiment)
Secondly, be described with reference to Fig. 1, Fig. 6 (a), the appearance inspection device 200 of Fig. 6 (b) ~ Fig. 9 to the 2nd embodiment of the present invention.Be described the example formed as follows in 2nd embodiment, namely except the formation of above-mentioned 1st embodiment, each parts of images also for photographed images carries out defect inspection.In addition, in the 2nd embodiment, device forms identical with the appearance inspection device 100 of above-mentioned 1st embodiment, therefore omits the description.In addition, appearance inspection device 200 is an example of " testing fixture " of the present invention.
As shown in Figure 8, the control part 230 (with reference to Fig. 1) of the appearance inspection device 200 (with reference to Fig. 1) of the 2nd embodiment, the multiple positions for solar battery cell 1 obtain the station diagram of various illumination look respectively as 80.And control part 230 is configured to each position for solar battery cell 1, selects the station diagram for checking as 80 and check as 80 based on selected station diagram.
Specifically, obtained photographed images 60 is divided into multiple station diagram as 80 by control part 230, and for the image that each station diagram is selected for checking as 80 individually.Be expressed as follows example in the example of Fig. 8, namely for photographed images 60 (illustrating 60c), obtain and be divided into the station diagram of total 16 ranks shapes at 4 parts of positions (X1 ~ X4 and Y1 ~ Y4) as 80 in all directions of X-axis and Y-axis.Thus, the station diagram of 3 kinds of colors of R, G, B is all obtained for each position as 80.
Station diagram is identical with above-mentioned 1st embodiment as the system of selection of 80, and control part 230 adopts the either method in the 1st system of selection ~ the 3rd system of selection, selects station diagram for checking as 80 for each position.Thus, even if such as large in the size of solar battery cell 1, and during the situation of the thickness d inequality of antireflection film 3 on each position, also suitable station diagram can be selected as 80 for each position.
Other formations of the appearance inspection device 200 of the 2nd embodiment are identical with above-mentioned 1st embodiment.
Secondly, with reference to Fig. 7 ~ Fig. 9, the control treatment of the control part 230 during inspection to the appearance inspection device 200 of the 2nd embodiment is described.
Step S1 ~ the S4 of step S21 ~ S24 and Fig. 7 is identical.In step S25, the photographed images 60 of obtained 3 kinds of colors (R, G, B) is divided into multiple (being 16 positions in the example of Fig. 8) station diagram as 80 by control part 230 respectively.
In step S26, control part 230 selects the position carrying out checking.Such as, in Fig. 8, from the position of X1Y1, (to X4Y1) checks in X direction, and (Y-coordinate) implements this process etc. successively line by line, based on the order preset, selects the position (such as X1Y1) carrying out checking.
In step S27, control part 230 as 80, selects station diagram for check as 80 by above-mentioned system of selection from the station diagram of red (R), green (G) and blue (B).In step S28, control part 230 reads and selects the decision threshold Th (and check algorithm) with selected illumination look corresponding from storage part 31.
Then, in step S29, control part 230 implements the defect inspection process shown in Fig. 6 (a), Fig. 6 (b) to selected station diagram as 80.Secondly, in step S30, judge whether the defect inspection of all (16 positions) inspection areas is terminated, and when the unclosed situation of the defect inspection of all sites, return step S25, be transferred to the inspection of next position (such as X2Y1).By repeating step S25 ~ step S30 to all sites, carry out the whole implementation defect inspection to solar battery cell 1 (photographed images 60).
At the end of the defect inspection of all sites, enter step S31, judge whether check result meets the decision condition of the regulation differentiating certified products or unacceptable product.As for determination processing, can make it with the result of the defect inspection for each position (station diagram is as 80) is gathered this process carried out to photographed images 60 entirety time identical.Step S31 is with the process down to step S34, identical with the step S8 ~ step S11 of Fig. 7, therefore omits the description.
In 2nd embodiment, form control part 230 as follows as mentioned above, namely the station diagram of various illumination look is obtained respectively as 80 to multiple positions (X1Y1 ~ X4Y4) of solar battery cell 1, and select the station diagram for checking as 80 for each position of solar battery cell 1 and check as 80 based on selected station diagram.Thus, even if during the situation of the thickness d inequality of the antireflection film 3 on each position of solar battery cell 1, also the photographed images (station diagram is as 80) of the illumination look being suitable for defects detection can be selected to carry out defects detection for each position, therefore precision can carry out defects detection higher.Especially, when the size of solar battery cell 1 becomes large, the thickness d of the antireflection film 3 on each position is easy to become uneven, and therefore the appearance inspection device 200 of the 2nd embodiment is suitable for the inspection of large-sized solar battery unit 1.
Other effects of 2nd embodiment are identical with above-mentioned 1st embodiment.
In addition, illustrate and non-limiting person when thinking that the embodiment this time disclosed is only in all respects.Scope of the present invention is not the explanation by above-mentioned embodiment, and also comprises and all changes in the meaning of its scope equalization and scope.
Such as, in above-mentioned 1st embodiment and the 2nd embodiment, illustrate apply the present invention to be arranged on solar battery cell production line on and carry out the example of the testing fixture checked on line, but the present invention is not limited thereto.Also can apply the present invention to arrange independent of production line and can the testing fixture of sampling check of battery unit in order to carry out large sun.
In addition, in above-mentioned 1st embodiment and the 2nd embodiment, illustrate the example of Lighting Division of illumination light of 3 kinds of illumination looks being provided with and can irradiating red (R), green (G) and blue (B), but the present invention is not limited thereto.In the present invention, illumination chromatic number also can not be 3 kinds of colors.Such as, also can be 2 kinds of red and blue colors.Being limited in scope of inequality of the thickness of antireflection film is determined, as long as therefore in fact at least have 2 kinds of red and blue colors just can carry out defect inspection accurately.In addition, the look that throws light on also can be more than 4 kinds of colors.During this situation, be set to the illumination look of which kind of color (wavelength), will preferably consider the inequality of the issuable thickness relative to design load, and the illumination look of suitable defects detection can be carried out in the uneven scope that can imagine.
In addition, in above-mentioned 1st embodiment and the 2nd embodiment, illustrate the example of light source 11 (11a ~ 11c) of each color being provided with red (R), green (G) and blue (B) at Lighting Division, but the present invention is not limited thereto.Such as, also can being configured to the light source to comprising white light-emitting diode etc., using the multiple chromatic filters (colorfilter) with illumination look corresponding to make it the illumination light of irradiating multiple color.In addition, as light source, the other light sources beyond light emitting diode can also be used.
In addition, in above-mentioned 1st embodiment and the 2nd embodiment, illustrate by the light source 11 (11a ~ 11c) of each color Lighting Division maintaining part with the order of RGB circumferentially shape arrangement example, but each light source such as also can be made to be that 3 of concentric circles encloses light source rows, the circle of redness (R) light source 11a, the circle of green (G) light source 11b and the circle of blueness (B) light source 11c are set individually.In addition, illustrate light source circumferentially shape the example of row arrangement in above-mentioned 1st embodiment and the 2nd embodiment, but also can limit shape arrangement light source in quadrilateral.During this situation, the shape of the diffusion reflector of maintaining part forms rectangular pyramid (pyramid) shape, and is provided with in order to the peristome to image pickup part leaded light at the top corner part on the top of rectangular pyramid.
In addition, in above-mentioned 1st embodiment and the 2nd embodiment, the either method illustrated in employing the 1st system of selection ~ the 3rd system of selection selects the example for the photographed images checked, but the present invention is not limited thereto.In the present invention, also can use the photographed images selected with the 1st system of selection ~ the 3rd system of selection diverse ways for checking.Such as, special film thickness gauge also can be set separately to obtain the thickness of antireflection film, and select photographed images based on the measurement result of film thickness gauge.
In addition, use as such as above-mentioned 1st embodiment and the 2nd embodiment red (R), green (G) and blue (B) the situation of light source time, these 3 kinds of colors form the three primary colors of so-called light, therefore can obtain the tone on the surface of solar battery cell according to the ratio of the signal intensity of the photographed images of each color of RGB.As mentioned above, the tone of cell surface is that the reflection strength of the color of the specific wavelength λ as the thickness depending on antireflection film reaches minimum result and shows, and can calculate reflection strength thus reach minimum specific wavelength λ and the thickness of antireflection film based on the ratio of the signal intensity of the photographed images of each color of RGB.The value of specific wavelength λ that also can obtain based on the ratio of the signal intensity according to 3 kinds of colors or the thickness of antireflection film, select photographed images.
In addition, in above-mentioned 2nd embodiment, illustrate photographed images 60 is divided into 16 station diagrams as 80 example, but the present invention is not limited thereto.In the present invention, the Segmentation Number of station diagram picture also can be made to be Segmentation Number beyond 16.The number at position (station diagram picture), if for the degree according to the size of solar battery cell and the thickness inequality at each position and can obtain required inspection precision position (station diagram picture) number.
In addition, in above-mentioned 2nd embodiment, illustrate and photographed images is split and obtains the example of each station diagram picture, but the present invention is not limited thereto.In the present invention, each position of image pickup part to solar battery cell also can be utilized to take.That is, when the situation that the size of solar battery cell is large, also by repeatedly taking and obtaining portion bit image whole unit according to each position.In addition, such as, also 1 solar battery cell can be divided into 4 parts to carry out 4 shootings, and then these photographed images be divided into 4 parts and obtain the station diagram picture etc. at 16 positions.
In addition, above-mentioned concrete numerical value (centre wavelength etc. of the light source of the size of solar battery cell, thickness, each color) is only an example, and the present invention is not limited thereto.The centre frequency of the size of solar battery cell, the thickness of antireflection film or light source also can be the value different from above-mentioned occurrence.
The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be the content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (10)
1. a testing fixture, it is the testing fixture of the solar battery cell being formed with antireflection film, it is characterized in that comprising:
Lighting Division, being configured to can to have the multiple illumination look of mutually different wavelength region may to irradiate illumination light;
Image pickup part, uses described illumination light to take described solar battery cell; And
Control part, for described multiple illumination look each and obtain the photographed images of described solar battery cell, and according to described solar battery cell to the reflection strength of described illumination light of various described illumination look or the thickness of described antireflection film, and from the described photographed images of various described illumination look, select the image for checking, and based on selected described photographed images, described solar battery cell is checked
Described control part is configured to the described photographed images selecting signal intensity relatively low from the multiple described photographed images of various described illumination look, or selects the described photographed images of the described illumination look corresponding with described antireflection film thickness.
2. testing fixture according to claim 1, it is characterized in that described control part is configured to from the multiple described photographed images of various described illumination look, signal intensity based on the described photographed images of the various described illumination look of the described reflection strength of reflection selects described photographed images, or selects described photographed images based on the thickness of described antireflection film.
3. testing fixture according to claim 2, is characterized in that described multiple illumination look at least comprises redness and blueness.
4. the testing fixture according to claim arbitrary in claims 1 to 3, it is characterized in that described control part is configured to use the decision threshold corresponding with the described illumination look of selected described photographed images, defect inspection is carried out to the described antireflection film be formed on described solar battery cell.
5. the testing fixture according to claim arbitrary in claims 1 to 3, it is characterized in that described control part is configured to obtain respectively multiple positions of described solar battery cell the station diagram picture of various described illumination look, and for described solar battery cell each described position and select the described station diagram picture for checking and check based on selected described station diagram picture.
6. testing fixture according to claim 1, is characterized in that described control part is configured to compare the mean value of the signal intensity of multiple described photographed images or intermediate value, and selects the described photographed images of mean value or the minimum described illumination look of intermediate value.
7. testing fixture according to claim 1, it is characterized in that described control part is configured to by described illumination light wavelength and the reflection strength of described solar battery cell and the matching of theoretical curve, and obtain the thickness of the described antireflection film with the signal intensity of the described photographed images of various described illumination look corresponding, and select the described photographed images of the described illumination look corresponding with the film thickness range of the regulation of the thickness comprising obtained described antireflection film.
8. testing fixture according to claim 1, it is characterized in that described control part is configured to use the reference data described reflection strength of various described illumination look be associated with the thickness of described antireflection film, obtain the thickness of the described antireflection film corresponding with the signal intensity of described photographed images, and select the described photographed images of the described illumination look corresponding with the film thickness range of the regulation of the thickness comprising obtained described antireflection film.
9. the testing fixture according to claim arbitrary in claims 1 to 3, is characterized in that described multiple illumination look comprises redness, blueness and green.
10. the testing fixture according to claim arbitrary in claims 1 to 3, is characterized in that described solar battery cell comprises poly semiconductor, and described antireflection film is silicon nitride film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012196349A JP5862522B2 (en) | 2012-09-06 | 2012-09-06 | Inspection device |
| JP2012-196349 | 2012-09-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103674974A CN103674974A (en) | 2014-03-26 |
| CN103674974B true CN103674974B (en) | 2016-04-27 |
Family
ID=50313179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310203802.8A Expired - Fee Related CN103674974B (en) | 2012-09-06 | 2013-05-27 | Testing fixture |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5862522B2 (en) |
| CN (1) | CN103674974B (en) |
| TW (1) | TWI480562B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6243800B2 (en) * | 2014-06-09 | 2017-12-06 | 株式会社神戸製鋼所 | Oxide semiconductor evaluation apparatus and method |
| JP6248819B2 (en) * | 2014-06-12 | 2017-12-20 | 株式会社島津製作所 | Inspection apparatus and inspection method |
| JP6758197B2 (en) * | 2015-01-28 | 2020-09-23 | 東レエンジニアリング株式会社 | Defect inspection method and defect inspection equipment for wide-gap semiconductor substrates |
| CN107924956B (en) * | 2015-10-21 | 2020-01-17 | 三菱电机株式会社 | Method for manufacturing solar cell |
| JP6094917B1 (en) * | 2016-06-07 | 2017-03-15 | 紘一 勝又 | Method for optimal design of antireflection film and photovoltaic power generation apparatus |
| JP6954142B2 (en) * | 2018-01-17 | 2021-10-27 | オムロン株式会社 | Image inspection equipment and lighting equipment |
| KR102137539B1 (en) * | 2018-07-12 | 2020-07-24 | (주) 인텍플러스 | Apparatus for inspecting exterior of battery |
| CN109406531A (en) * | 2018-10-23 | 2019-03-01 | 凌云光技术集团有限责任公司 | A kind of photovoltaic glass coating defects detection system |
| CN109632824B (en) * | 2019-01-11 | 2020-04-21 | 英特尔产品（成都）有限公司 | Object inspection system for object anomaly inspection |
| CN114813783B (en) * | 2022-03-31 | 2022-11-15 | 慧之安信息技术股份有限公司 | Chip surface flaw detection method |
| KR102572762B1 (en) * | 2022-12-19 | 2023-08-31 | 주식회사 맥사이언스 | Tandem solar cell electro luminescence imaging system |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001108639A (en) * | 1999-10-05 | 2001-04-20 | Ricoh Co Ltd | Method and apparatus for detection of defect |
| JP2005308615A (en) * | 2004-04-23 | 2005-11-04 | Olympus Corp | Surface flaw inspection device |
| CN101473219A (en) * | 2006-07-14 | 2009-07-01 | 株式会社尼康 | Surface inspecting apparatus |
| CN101726499A (en) * | 2008-10-10 | 2010-06-09 | 丰田自动车株式会社 | Surface inspection apparatus |
| JP2011257222A (en) * | 2010-06-08 | 2011-12-22 | Hitachi High-Technologies Corp | Defect inspection method and defect inspection device |
| CN102414821A (en) * | 2009-05-01 | 2012-04-11 | 信越半导体股份有限公司 | SOI wafer inspection method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06174448A (en) * | 1992-12-09 | 1994-06-24 | Seiko Epson Corp | Positioning device for liquid crystal panel and pattern inspection device |
| JP4162319B2 (en) * | 1999-03-10 | 2008-10-08 | 株式会社ニデック | Defect inspection equipment |
| JP4418078B2 (en) * | 2000-04-03 | 2010-02-17 | 株式会社トプコン | Surface inspection device |
| US20020186878A1 (en) * | 2001-06-07 | 2002-12-12 | Hoon Tan Seow | System and method for multiple image analysis |
| WO2005100961A2 (en) * | 2004-04-19 | 2005-10-27 | Phoseon Technology, Inc. | Imaging semiconductor strucutures using solid state illumination |
| JP2006113022A (en) * | 2004-10-18 | 2006-04-27 | Toppan Printing Co Ltd | Defect detection device and method on antireflection film |
| KR20070099398A (en) * | 2006-04-03 | 2007-10-09 | 삼성전자주식회사 | Apparatus for inspecting substrate and method of inspecting substrate using the same |
| JP2008058270A (en) * | 2006-09-04 | 2008-03-13 | Mitsubishi Electric Corp | Inspection method of polycrystal silicon substrate, inspection method of photovoltaic cell, and infrared inspection apparatus |
| JP4389982B2 (en) * | 2007-08-09 | 2009-12-24 | オムロン株式会社 | Substrate visual inspection device |
| KR101609007B1 (en) * | 2008-07-18 | 2016-04-04 | 아사히 가라스 가부시키가이샤 | Image data processing apparatus and method for defect inspection, defect inspecting apparatus and method using the image data processing apparatus and method, board-like body manufacturing method using the defect inspecting apparatus and method, and recording medium |
-
2012
- 2012-09-06 JP JP2012196349A patent/JP5862522B2/en not_active Expired - Fee Related
-
2013
- 2013-05-27 CN CN201310203802.8A patent/CN103674974B/en not_active Expired - Fee Related
- 2013-05-28 TW TW102118717A patent/TWI480562B/en not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001108639A (en) * | 1999-10-05 | 2001-04-20 | Ricoh Co Ltd | Method and apparatus for detection of defect |
| JP2005308615A (en) * | 2004-04-23 | 2005-11-04 | Olympus Corp | Surface flaw inspection device |
| CN101473219A (en) * | 2006-07-14 | 2009-07-01 | 株式会社尼康 | Surface inspecting apparatus |
| CN101726499A (en) * | 2008-10-10 | 2010-06-09 | 丰田自动车株式会社 | Surface inspection apparatus |
| CN102414821A (en) * | 2009-05-01 | 2012-04-11 | 信越半导体股份有限公司 | SOI wafer inspection method |
| JP2011257222A (en) * | 2010-06-08 | 2011-12-22 | Hitachi High-Technologies Corp | Defect inspection method and defect inspection device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201411155A (en) | 2014-03-16 |
| CN103674974A (en) | 2014-03-26 |
| JP2014052261A (en) | 2014-03-20 |
| TWI480562B (en) | 2015-04-11 |
| JP5862522B2 (en) | 2016-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103674974B (en) | Testing fixture | |
| KR101474191B1 (en) | Luminous module and visual inspection system using the same | |
| CN102483353B (en) | High spectral resolution color sensor using non-dispersive elements | |
| US20120104255A1 (en) | Method for inspecting a photovoltaic substrate | |
| CN102983089A (en) | Solar battery unit inspection device | |
| CN107611046A (en) | Inner layer defect detection device and method | |
| CN106373970A (en) | Image sensor | |
| CN105009290A (en) | Imaging element and electronic equipment | |
| JP2008205188A (en) | Film thickness measuring method and device thereof, and thin film producing system | |
| CN108456864A (en) | Epitaxial layer growth equipment and defect detection method in epitaxial layer growth process | |
| CN104034663B (en) | Material space reflection characteristic measuring instrument using optical fiber bundles | |
| CN201467300U (en) | Day and night dual-purpose camera, light filter and optical system thereof | |
| WO2020218113A1 (en) | Contamination inspection device, contamination inspection method, and solar power generation module management method | |
| KR20180061829A (en) | Apparatus and method for measuring light transmittance of solar panel | |
| CN104952758A (en) | Film layer uniformity detection method and device | |
| TWI454689B (en) | Optical inspecting system | |
| CN101915546B (en) | Solar chip anti-reflection coating detection method and detection device thereof | |
| KR101030451B1 (en) | Tube and washer inspecting apparatus of cylinder type rechargeable battery | |
| CN201740515U (en) | Detecting device of antireflection layer of solar chip | |
| Korte et al. | Measurements of effective optical reflectivity using a conventional flatbed scanner—Fast assessment of optical layer properties | |
| CN114192440B (en) | Device and method for detecting unqualified wafers and wafer manufacturing equipment | |
| CN205897018U (en) | Multispectral LED lighting detection device | |
| KR102284260B1 (en) | Spectral measurement apparatus for estimating characteristic of solar panel | |
| CN102927918A (en) | Detection method and device of anti-reflection layer of solar chip | |
| Kim | Micro defect detection in solar cell wafer based on hybrid illumination and near-infrared optics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160427 Termination date: 20190527 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |