CN103674357B - A kind ofly embed thin-film force transducer of cutter formula and preparation method thereof - Google Patents
A kind ofly embed thin-film force transducer of cutter formula and preparation method thereof Download PDFInfo
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- CN103674357B CN103674357B CN201310715719.9A CN201310715719A CN103674357B CN 103674357 B CN103674357 B CN 103674357B CN 201310715719 A CN201310715719 A CN 201310715719A CN 103674357 B CN103674357 B CN 103674357B
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- sheet resistance
- resistance grid
- dielectric film
- thin dielectric
- film
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Abstract
The present invention relates to cutting force measurement technology, specifically a kind ofly embed thin-film force transducer of cutter formula and preparation method thereof.The invention solves that existing dynamometer volume is large, measuring accuracy and sensitivity is low, complex structure, manufacturing cost are high problem.Embed a thin-film force transducer for cutter formula, comprise substrate; The upper surface of substrate is formed with thin dielectric film; The upper surface of thin dielectric film is formed with four sheet resistance grid and eight membrane electrodes; Wherein two equal genesis analysis of sheet resistance grid are in the upper surface of thin dielectric film, and the position of these two sheet resistance grid is symmetrical about the width centreline of thin dielectric film; The equal cross direction profiles of two other sheet resistance grid is in the upper surface of thin dielectric film, and the position of these two sheet resistance grid is symmetrical about the width centreline of thin dielectric film; The two ends of four sheet resistance grid and eight membrane electrodes connect one to one.The present invention is applicable to precision, Ultra-precision machining.
Description
Technical field
The present invention relates to cutting force measurement technology, specifically a kind ofly embed thin-film force transducer of cutter formula and preparation method thereof.
Background technology
In precision, Ultra-precision machining process, cutting force directly reflects the working condition of cutter.Therefore, the measurement of cutting force is all significant for the control of cutting quality, the prediction of cutter life etc.Under prior art conditions, the measurement of cutting force is generally realized by dynamometer.But existing dynamometer is many to be made up of various discrete component, and there are the following problems to cause it: one, volume is comparatively large, causes it cannot meet the measurement requirement of microminiaturization.Its two, measuring accuracy and sensitivity lower, cause it cannot meet high precision, high-resolution measurement requirement.Its three, complex structure, manufacturing cost are higher, cause it cannot meet the measurement requirement of high reliability, low cost.Based on this, be necessary to invent a kind of brand-new cutting force measurement device, existing dynamometer volume be large to solve, measuring accuracy and sensitivity is low, complex structure, manufacturing cost are high problem.
Summary of the invention
In order to solve, existing dynamometer volume is large in the present invention, measuring accuracy and sensitivity is low, complex structure, manufacturing cost are high problem, provides a kind ofly to embed thin-film force transducer of cutter formula and preparation method thereof.
The present invention adopts following technical scheme to realize: a kind of thin-film force transducer embedding cutter formula, comprises substrate; The upper surface of substrate is formed with thin dielectric film; The upper surface of thin dielectric film is formed with four sheet resistance grid and eight membrane electrodes; Wherein two equal genesis analysis of sheet resistance grid are in the upper surface of thin dielectric film, and the position of these two sheet resistance grid is symmetrical about the width centreline of thin dielectric film; The equal cross direction profiles of two other sheet resistance grid is in the upper surface of thin dielectric film, and the position of these two sheet resistance grid is symmetrical about the width centreline of thin dielectric film; The two ends of four sheet resistance grid and eight membrane electrodes connect one to one; The upper surface of four sheet resistance grid is formed with thinfilm protective coating; Eight membrane electrodes are all exposed to outside thinfilm protective coating; The upper surface of eight membrane electrodes is respectively connected with a wire.
During work, substrate welds is fixed on the handle of a knife position of cutter, and by wire, four sheet resistance grid and external voltage list catenation is formed Wheatstone bridge, as shown in Figure 5.Specific works process is as follows: when Tool in Cutting workpiece, and the cutting force suffered by cutter causes four sheet resistance grid all deformation to occur.Now, the deformation quantity of the deformation quantity of two sheet resistance grid of genesis analysis and two sheet resistance grid of cross direction profiles is unequal, causes Wheatstone bridge to produce output voltage.Measure this output voltage in real time by external voltage table, the size of the cutting force suffered by cutter can be calculated according to this output voltage in real time, realize the measurement of cutting force thus.In the process, the effect of thin dielectric film makes to realize insulation between four sheet resistance grid, eight membrane electrodes.The effect of thinfilm protective coating is protection four sheet resistance grid.Based on said process, compared with existing dynamometer, a kind of thin-film force transducer tool embedding cutter formula of the present invention has the following advantages: one, a kind of thin-film force transducer embedding cutter formula of the present invention passes through to adopt membrane structure, effectively reduce own vol, thus meet the measurement requirement of microminiaturization completely.They are two years old, a kind of thin-film force transducer embedding cutter formula of the present invention measures cutting force in real time by employing four sheet resistance grid and Wheatstone bridge, effectively improve measuring accuracy and sensitivity, thus meet high precision, high-resolution measurement requirement completely.Its three, a kind of thin-film force transducer embedding cutter formula of the present invention, by adopting membrane structure, effectively simplifies self structure, and effectively reduces manufacturing cost, thus meet the measurement requirement of high reliability, low cost completely.In sum, a kind of thin-film force transducer embedding cutter formula of the present invention is based on brand new, efficiently solve that existing dynamometer volume is large, measuring accuracy and sensitivity is low, complex structure, manufacturing cost are high problem, simultaneously it achieves cutter and is changed to intelligentized perceptional function by the simple function of cut, meets the various measurement requirements in precision, Ultra-precision machining process completely.
Further, the material of described substrate is No. 45 steel; The material of described thin dielectric film is Si
3n
4; The material of described four sheet resistance grid is Ni-Cr alloy; The material of described eight membrane electrodes is Ni-Cr alloy; The material of described thinfilm protective coating is Si
3n
4; The material of described eight wires is copper.
Further, described substrate is square substrates, and its length is 15mm, and width is 15mm, and thickness is 1mm; Described thin dielectric film is square film insulation course, and its length is 15mm, and width is 15mm, and thickness is 500-1000nm; Described four sheet resistance grid are rectangular shaped sheet resistance grid, and its length is 2.55mm, and width is 2mm, and thickness is 400nm; Described eight membrane electrodes are square film electrode, and its length is 2mm, and width is 2mm, and thickness is 400nm; Described thinfilm protective coating is square film protective seam, and its thickness is 500-1000nm; Described eight wire cross-section area are 1.0 × 10
-4mm
2.
A kind of preparation method's (the method is for the preparation of a kind of thin-film force transducer embedding cutter formula of the present invention) embedding the thin-film force transducer of cutter formula, the method adopts following steps to realize:
A. substrate is prepared;
B. thin dielectric film is formed at the upper surface of substrate;
C. form film sensitive layer at the upper surface of thin dielectric film, and form four sheet resistance grid and eight membrane electrodes at the photomask surface of film sensitive layer;
D. form thinfilm protective coating at the upper surface of four sheet resistance grid, and ensure that eight membrane electrodes are all exposed to outside thinfilm protective coating;
E. a wire is respectively connected at the upper surface of eight membrane electrodes.
In described step a, prepare substrate and comprise the following steps: first, choose No. 45 steel as raw material; Then, carry out modified, Linear cut, grinding, grinding and polishing, surface treatment successively to No. 45 steel, No. 45 steel are made into substrate thus.
In described step b, form thin dielectric film at the upper surface of substrate and comprise the following steps: first, choose the Si that purity is 99%
3n
4; Then, by Dual ion beam sputtering deposition technique by Si
3n
4be deposited on the upper surface of substrate, Si
3n
4form thin dielectric film thus.
In described step c, form film sensitive layer at the upper surface of thin dielectric film, and form four sheet resistance grid and eight membrane electrodes comprise the following steps at the photomask surface of film sensitive layer: first, choose the Ni-Cr alloy of Ni80/Cr20; Then, by Dual ion beam sputtering deposition technique, Ni-Cr alloy is deposited on the upper surface of thin dielectric film, Ni-Cr alloy forms film sensitive layer thus; Finally, by photoetching process, film sensitive layer is etched, and etch formation four sheet resistance grid and eight membrane electrodes.
In described steps d, form thinfilm protective coating at the upper surface of four sheet resistance grid and comprise the following steps: first, choose the Si that purity is 99%
3n
4; Then, by Dual ion beam sputtering deposition technique by Si
3n
4be deposited on the upper surface of four sheet resistance grid, Si
3n
4form thinfilm protective coating thus.
In described step e, respectively connect a copper wire by ultrasonic welding process at the upper surface of eight membrane electrodes.
The present invention is rational in infrastructure, it is ingenious to design, and efficiently solves that existing dynamometer volume is large, measuring accuracy and sensitivity is low, complex structure, manufacturing cost are high problem, is applicable to precision, Ultra-precision machining.
Accompanying drawing explanation
Fig. 1 is a kind of one-piece construction schematic diagram embedding the thin-film force transducer of cutter formula of the present invention.
Fig. 2 is a kind of Split type structure schematic diagram embedding the thin-film force transducer of cutter formula of the present invention.
Fig. 3 is a kind of part-structure schematic diagram embedding the thin-film force transducer of cutter formula of the present invention.
Fig. 4 of the present inventionly a kind ofly embeds the sheet resistance grid of the thin-film force transducer of cutter formula and the structural representation of membrane electrode.
Fig. 5 is a kind of structural representation embedding the Wheatstone bridge of the thin-film force transducer of cutter formula of the present invention.
Fig. 6 is a kind of schematic diagram embedding the step c of the preparation method of the thin-film force transducer of cutter formula of the present invention.
Fig. 7 is the structural representation of the mask plate in a kind of preparation method embedding the thin-film force transducer of cutter formula of the present invention.
In figure: 1-substrate, 2-thin dielectric film, 3-sheet resistance grid, 4-membrane electrode, 5-thinfilm protective coating, 6-wire, 7-film sensitive layer, 8-photoresist, 9-mask plate.
Embodiment
Embed a thin-film force transducer for cutter formula, comprise substrate 1; The upper surface of substrate 1 is formed with thin dielectric film 2; The upper surface of thin dielectric film 2 is formed with four sheet resistance grid 3 and eight membrane electrodes 4; Wherein two equal genesis analysis of sheet resistance grid 3 are in the upper surface of thin dielectric film 2, and the position of these two sheet resistance grid 3 is symmetrical about the width centreline of thin dielectric film 2; The equal cross direction profiles of two other sheet resistance grid 3 is in the upper surface of thin dielectric film 2, and the position of these two sheet resistance grid 3 is symmetrical about the width centreline of thin dielectric film 2; The two ends of four sheet resistance grid 3 and eight membrane electrodes 4 connect one to one; The upper surface of four sheet resistance grid 3 is formed with thinfilm protective coating 5; Eight membrane electrodes 4 are all exposed to outside thinfilm protective coating 5; The upper surface of eight membrane electrodes 4 is respectively connected with a wire 6.
The material of described substrate 1 is No. 45 steel; The material of described thin dielectric film 2 is Si
3n
4; The material of described four sheet resistance grid 3 is Ni-Cr alloy; The material of described eight membrane electrodes 4 is Ni-Cr alloy; The material of described thinfilm protective coating 5 is Si
3n
4; The material of described eight wires 6 is copper.
Described substrate 1 is square substrates, and its length is 15mm, and width is 15mm, and thickness is 1mm; Described thin dielectric film 2 is square film insulation course, and its length is 15mm, and width is 15mm, and thickness is 500-1000nm; Described four sheet resistance grid 3 are rectangular shaped sheet resistance grid, and its length is 2.55mm, and width is 2mm, and thickness is 400nm; Described eight membrane electrodes 4 are square film electrode, and its length is 2mm, and width is 2mm, and thickness is 400nm; Described thinfilm protective coating 5 is square film protective seam, and its thickness is 500-1000nm; The sectional area of described eight wires 6 is 1.0 × 10
-4mm
2.
A kind of preparation method's (the method is for the preparation of a kind of thin-film force transducer embedding cutter formula of the present invention) embedding the thin-film force transducer of cutter formula, the method adopts following steps to realize:
A. substrate 1 is prepared;
B. thin dielectric film 2 is formed at the upper surface of substrate 1;
C. form film sensitive layer 7 at the upper surface of thin dielectric film 2, and form four sheet resistance grid 3 and eight membrane electrodes 4 at the photomask surface of film sensitive layer 7;
D. form thinfilm protective coating 5 at the upper surface of four sheet resistance grid 3, and ensure that eight membrane electrodes 4 are all exposed to outside thinfilm protective coating 5;
E. a wire 6 is respectively connected at the upper surface of eight membrane electrodes 4.
In described step a, prepare substrate 1 and comprise the following steps: first, choose No. 45 steel as raw material; Then, carry out modified, Linear cut, grinding, grinding and polishing, surface treatment successively to No. 45 steel, No. 45 steel are made into substrate 1 thus.
In described step b, form thin dielectric film 2 at the upper surface of substrate 1 and comprise the following steps: first, choose the Si that purity is 99%
3n
4; Then, by Dual ion beam sputtering deposition technique by Si
3n
4be deposited on the upper surface of substrate 1, Si
3n
4form thin dielectric film 2 thus.
In described step c, form film sensitive layer 7 at the upper surface of thin dielectric film 2, and form four sheet resistance grid 3 and eight membrane electrodes 4 comprise the following steps at the photomask surface of film sensitive layer 7: first, choose the Ni-Cr alloy of Ni80/Cr20; Then, by Dual ion beam sputtering deposition technique, Ni-Cr alloy is deposited on the upper surface of thin dielectric film 2, Ni-Cr alloy forms film sensitive layer 7 thus; Finally, by photoetching process, film sensitive layer 7 is etched, and etch formation four sheet resistance grid 3 and eight membrane electrodes 4.
In described steps d, form thinfilm protective coating 5 at the upper surface of four sheet resistance grid 3 and comprise the following steps: first, choose the Si that purity is 99%
3n
4; Then, by Dual ion beam sputtering deposition technique by Si
3n
4be deposited on the upper surface of four sheet resistance grid 3, Si
3n
4form thinfilm protective coating 5 thus.
In described step e, respectively connect a copper wire 6 by ultrasonic welding process at the upper surface of eight membrane electrodes 4.
During concrete enforcement, as shown in Figure 4, each sheet resistance grid are formed by 18 resistor stripes, and the width of each resistor stripe is 0.05mm, and thickness is 400nm, and the interval of adjacent two resistor stripes is 0.05mm.The both sides of each sheet resistance grid are equipped with four semifixed resistor bars, and the width of each semifixed resistor bar is 0.05mm, and thickness is 400nm, are blown the resistance of semifixed resistor bar and adjustable sheet resistance grid by laser.Connected one to one by eight contact resistance bars between the two ends of four sheet resistance grid and eight membrane electrodes, the length of each contact resistance bar is 0.6mm, and width is 0.05mm, and thickness is 400nm.In described step a, the upper and lower surfaceness of substrate is 100nm.In described step b-d, the concrete technology parameter of Dual ion beam sputtering deposition technique is as follows: working gas is argon gas, and background vacuum is 9.0 × 10
-4pa, working pressure is 0.5Pa, and radio-frequency power is 180W, and O2 to Ar ratio is 1:9, and in sputtering cup, pressure is less than 6.65 × 10
-3pa, during sputtering, ar pressure is 3.33Pa, and target surface is to substrate separation from being 50mm, and sputtering voltage is 420V, and sputtering current is 0.14A, and sputtering time is 1 hour.In described step c, the concrete technology parameter of photoetching process is as follows: photoresist is S1813 photoresist, and the spin coating rotating speed of photoresist is 2500r/pm, and the spin-coating time of photoresist is 30s, mask plate is silicon mask plate, and use wavelength is 360nm, energy density is 5.5mWcm
2ultraviolet, the time shutter is 25s, and development time is 120s, and the post bake time is 30min, and the time of removing photoresist is 40min.
Claims (2)
1. embed a thin-film force transducer for cutter formula, it is characterized in that: comprise substrate (1); The upper surface of substrate (1) is formed with thin dielectric film (2); The upper surface of thin dielectric film (2) is formed with four sheet resistance grid (3) and eight membrane electrodes (4); Wherein two equal genesis analysis of sheet resistance grid (3) are in the upper surface of thin dielectric film (2), and the position of these two sheet resistance grid (3) is symmetrical about the width centreline of thin dielectric film (2); The equal cross direction profiles of two other sheet resistance grid (3) is in the upper surface of thin dielectric film (2), and the position of these two sheet resistance grid (3) is symmetrical about the width centreline of thin dielectric film (2); Two ends and eight membrane electrodes (4) of four sheet resistance grid (3) connect one to one; The upper surface of four sheet resistance grid (3) is formed with thinfilm protective coating (5); Eight membrane electrodes (4) are all exposed to thinfilm protective coating (5) outward; The upper surface of eight membrane electrodes (4) is respectively connected with a wire (6);
Described substrate (1) is square substrates, and its length is 15mm, and width is 15mm, and thickness is 1mm; Described thin dielectric film (2) is square film insulation course, and its length is 15mm, and width is 15mm, and thickness is 500-1000nm; Described four sheet resistance grid (3) are rectangular shaped sheet resistance grid, and its length is 2.55mm, and width is 2mm, and thickness is 400nm; Described eight membrane electrodes (4) are square film electrode, and its length is 2mm, and width is 2mm, and thickness is 400nm; Described thinfilm protective coating (5) is square film protective seam, and its thickness is 500-1000nm; The sectional area of described eight wires (6) is 1.0 × 10
-4mm
2.
2. a kind of thin-film force transducer embedding cutter formula according to claim 1, is characterized in that: the material of described substrate (1) is No. 45 steel; The material of described thin dielectric film (2) is Si
3n
4; The material of described four sheet resistance grid (3) is Ni-Cr alloy; The material of described eight membrane electrodes (4) is Ni-Cr alloy; The material of described thinfilm protective coating (5) is Si
3n
4; The material of described eight wires (6) is copper.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310715719.9A CN103674357B (en) | 2013-12-23 | 2013-12-23 | A kind ofly embed thin-film force transducer of cutter formula and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310715719.9A CN103674357B (en) | 2013-12-23 | 2013-12-23 | A kind ofly embed thin-film force transducer of cutter formula and preparation method thereof |
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| CN103674357A CN103674357A (en) | 2014-03-26 |
| CN103674357B true CN103674357B (en) | 2015-09-02 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104034476B (en) * | 2014-06-04 | 2015-11-18 | 西北工业大学 | The magnetic resonance proving installation of diaphragm type force snesor |
| US10866203B2 (en) * | 2016-03-31 | 2020-12-15 | Kyocera Corporation | Stress sensor |
| CN108279131A (en) * | 2018-02-13 | 2018-07-13 | 中国汽车工程研究院股份有限公司 | The test method for working condition measurement device and the operating mode of overtaking other vehicles of overtaking other vehicles |
| CN110788670B (en) * | 2019-09-25 | 2020-09-22 | 北京石墨烯技术研究院有限公司 | Cutter wear monitoring system based on graphene sensor |
| CN112317785B (en) * | 2020-11-02 | 2021-10-01 | 中北大学 | Turning force measuring tool system with insert-insert fastening type sensitive structure |
| CN112317786B (en) * | 2020-11-02 | 2021-08-27 | 中北大学 | Turning force measuring tool system with direct inserting type sensitive structure |
| CN113432772B (en) * | 2021-06-17 | 2023-09-08 | 中北大学 | High-sensitivity film sensor for measuring object surface shock wave and manufacturing method thereof |
| CN113798921A (en) * | 2021-10-18 | 2021-12-17 | 电子科技大学 | Milling force measuring instrument based on film strain gauge |
| CN114001639A (en) * | 2021-11-19 | 2022-02-01 | 中北大学 | Four-strain-gap four-resistance-gate type thin film strain sensor and preparation method thereof |
| CN114083005A (en) * | 2021-12-14 | 2022-02-25 | 北京石墨烯技术研究院有限公司 | Turning device |
| CN115876071B (en) * | 2023-03-08 | 2023-05-12 | 中北大学 | Hollowed-out four-resistance grid type thin film strain sensor and preparation method thereof |
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| JP2001133339A (en) * | 1999-11-01 | 2001-05-18 | Matsushita Electric Ind Co Ltd | Seating sensor and detector using it |
| JP2002292505A (en) * | 2001-03-29 | 2002-10-08 | Kyocera Corp | Cutting tool equipped with sensor and its manufacturing method |
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Granted publication date: 20150902 Termination date: 20171223 |