CN103669111A - Preparation method of fluorescent semiconductor nanocrystalline security paper - Google Patents
Preparation method of fluorescent semiconductor nanocrystalline security paper Download PDFInfo
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- CN103669111A CN103669111A CN201310717991.0A CN201310717991A CN103669111A CN 103669111 A CN103669111 A CN 103669111A CN 201310717991 A CN201310717991 A CN 201310717991A CN 103669111 A CN103669111 A CN 103669111A
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Abstract
The invention discloses a preparation method of fluorescent semiconductor nanocrystalline security paper. According to the method, a fluorescent semiconductor nanocrystalline is uniformly dispersed in a carrier solution; then paper is uniformly coated with the carrier solution; and the nanocrystalline is loaded into the paper sheet and the unique fluorescent anti-counterfeiting performance of the semiconductor nanocrystalline is kept so as to prepare the nanocrystalline security paper. According to the fluorescent semiconductor nanocrystalline security paper provided by the invention, the semiconductor nanocrystalline has excellent photochemical stability; the excellent fluorescence characteristic of the nanocrystalline is kept; and the fluorescent semiconductor nanocrystalline security paper has a more stable fluorescent anti-counterfeiting effect as compared with the conventional fluorescent security paper and is more difficult to counterfeit.
Description
Technical field
The invention belongs to cheque paper preparing technical field, particularly the preparation method of the nanocrystalline cheque paper of a kind of fluorescence semiconductor.
Background technology
Along with socioeconomic development, anti-counterfeiting technology is developed rapidly, and nanometer anti-counterfeiting technology is the front line science technology of field of anti-counterfeit technology.Fluorescence semiconductor is nanocrystalline, conventionally by II-VI Zu Huo III-V family element, forms (as ZnS, ZnSe, CdS, CdSe, CdTe etc.), and diameter 1~20 nm, has unique electricity, optical property; Its absorption spectrum is wide, and emission spectrum is narrow and symmetrical, and by regulating composition and size can make its light of launching different colours, as the CdSe quantum dot green-emitting fluorescence of diameter 3nm, the CdSe quantum dot of diameter 6nm has less band-gap energy, and sends out red fluorescence; And different colours fluorescence can be excited by same monochromatic source simultaneously, there is the polynary transmitting of an elementary excitation, optical stability is high, fluorescence lifetime is long, and molar extinction coefficient is larger, and fluorescence quantum yield is higher, having good photochemical stability, is the good material of development anti-fake mark coding.
It is larger that semiconductor nano photoluminescent property is affected by its surface texture, condition changes or the introducing of other materials can make nanocrystalline generation physics, chemical action, and electric charge and the composition of change nanocrystal surface even can cause the restructuring in core electron hole, make nanocrystalline fluorescence generation fluorescent quenching.
Develop suitable carrier, make nanocrystalline being dispersed in carrier, and fluorescence nano is loaded in page by carrier in the mode of Paper Coating, the fluorescent characteristic that retains nanocrystalline uniqueness, giving the nanocrystalline anti-counterfeiting performance of paper uniqueness, is a kind of novel nanocrystalline cheque paper, and advanced person possesses skills, the features such as anti-counterfeit capability is strong, and fraud difficulty is large.
Summary of the invention
The object of the present invention is to provide a kind of novel cheque paper, be dispersed in suitable carrier fluorescence semiconductor is nanocrystalline, by the method for Paper Coating, by nanocrystalline, by carrier, be written in page, the fluorescence property that retains semiconductor nano uniqueness, makes paper have obvious fluorescence falsification preventing effect, and advanced person possesses skills, the features such as anti-counterfeit capability is strong, and fraud difficulty is large.
Technical scheme of the present invention is: the preparation method of the nanocrystalline cheque paper of a kind of fluorescence semiconductor, be dispersed in carrier solution fluorescence semiconductor is nanocrystalline, then carrier solution is evenly coated on paper by the method for Paper Coating, by nanocrystalline, be written in page, prepare nanocrystalline cheque paper.
The present invention's semiconductor nano used is CdTe and CdTe/CdS, nanocrystalline glomeration, size distribution is even, good dispersion, size is at 1-20nm, the semiconductor nano of different size is when being subject to exciting, can send the fluorescence of different wave length, different colours, nanocrystalline emission wavelength can come tuning by controlling the size of their particle diameter, and obtaining multiple distinguishable fluorescence, the CdTe fluorescence of different size size can be contained whole visible spectrum, preferably, cheque paper prepared by the present invention, the nanocrystalline concentration that is dispersed in carrier is 0.1-0.5mg/ml.
The present invention's carrier used is nanometer carboxymethyl starch, nano oxidized starch, average grain diameter 80-350nm, and at 85-95 ℃ of gelatinization 30min, carrier concn is 8-12%, nanocrystallinely in this carrier, disperses, and has good fluorescence chemical stability.
Cheque paper provided by the invention, carrier loads the nanocrystalline nanocrystalline fluorescence labeling that carries out that can simultaneously use two kinds and two or more different size size, has and is difficult to imitated fluorescence falsification preventing effect.
Cheque paper provided by the invention, loads the carrier solution of semiconductor nano, adopts the method for Paper Coating, carrier solution is evenly coated to the surface of page.
The nanocrystalline cheque paper of fluorescence semiconductor provided by the invention has advantages of: adopt carrier to load the nanocrystalline cheque paper of preparing of fluorescence semiconductor, nanocrystalline have a good photochemical stability, kept nanocrystalline good fluorescent characteristic, there is the fluorescence falsification preventing effect more stable than conventional fluorescent anti-forge paper, and be more difficult to copy.
The specific embodiment
Embodiment 1:
Adopt nanometer carboxymethyl starch carrier at 90-95 ℃ of gelatinization 30min, carrier concn is 10%, adding respectively particle diameter is the CdTe semiconductor nano of 4nm and 8nm, be dispersed in nanometer carboxymethyl starch soln, nanocrystalline concentration is 0.2mg/ml, will contain nanocrystalline nanometer carboxymethyl starch soln, adopt the method for coating, evenly coat the surface of page, after being dried, obtain the nanocrystalline cheque paper of fluorescence semiconductor that contains two kinds of different sizes.Adopt ultraviolet fluorescent lamp to irradiate nanocrystalline cheque paper, cheque paper shows yellow and fluorescent orange, can obviously pick out the fluorescence falsification preventing effect of the semiconductor nano in cheque paper.
Embodiment 2:
Adopt nano oxidized starch carrier at 90-95 ℃ of gelatinization 30min, carrier concn is 12%, adding respectively particle diameter is the CdTe semiconductor nano of 4nm and 8nm, be dispersed in nano oxidized starch solution, nanocrystalline concentration is 0.4mg/ml, will contain nanocrystalline nano oxidized starch solution, adopt the method for coating, evenly coat the surface of page, after being dried, obtain the nanocrystalline cheque paper of fluorescence semiconductor that contains two kinds of different sizes.Adopt ultraviolet fluorescent lamp to irradiate nanocrystalline cheque paper, cheque paper shows yellow and fluorescent orange, can obviously pick out the fluorescence falsification preventing effect of the semiconductor nano in cheque paper.
Embodiment 3:
Adopt nano oxidized starch carrier at 90-95 ℃ of gelatinization 30min, carrier concn is 10%, adding respectively particle diameter is the CdTe semiconductor nano of 4nm and 10nm, be dispersed in nano oxidized starch solution, nanocrystalline concentration is 0.3mg/ml, will contain nanocrystalline nano oxidized starch solution, adopt the method for coating, evenly coat the surface of page, after being dried, obtain the nanocrystalline cheque paper of fluorescence semiconductor that contains two kinds of different sizes.Adopt ultraviolet fluorescent lamp to irradiate nanocrystalline cheque paper, cheque paper shows yellow and red fluorescence, can obviously pick out the fluorescence falsification preventing effect of the semiconductor nano in cheque paper.
Claims (5)
1. the preparation method of the nanocrystalline cheque paper of fluorescence semiconductor, it is characterized in that: be dispersed in carrier solution fluorescence semiconductor is nanocrystalline, then carrier solution is evenly coated on paper, by nanocrystalline, be written in page, retain the fluorescent characteristic of semiconductor nano uniqueness, prepare nanocrystalline cheque paper.
2. the preparation method of the nanocrystalline cheque paper of fluorescence semiconductor according to claim 1, it is characterized in that: described semiconductor nano is CdTe and CdTe/CdS, nanocrystalline glomeration, size distribution is even, good dispersion, size is at 1-20nm, and the nanocrystalline concentration that is dispersed in carrier is 0.1-0.5mg/ml.
3. the preparation method of the nanocrystalline cheque paper of fluorescence semiconductor according to claim 1, it is characterized in that: described carrier is nanometer carboxymethyl starch, nano oxidized starch, average grain diameter 80-350nm, at 85-95 ℃ of gelatinization 30min, carrier concn is 8-12%.
4. the preparation method of the nanocrystalline cheque paper of fluorescence semiconductor according to claim 1, is characterized in that: the semiconductor nano that carrier loads can be used CdTe and the nanocrystalline fluorescence labeling that carries out of CdTe/CdS of two kinds and two or more different size size simultaneously.
5. the preparation method of the nanocrystalline cheque paper of fluorescence semiconductor according to claim 1, is characterized in that: load the carrier solution of semiconductor nano, employing be the method for Paper Coating, carrier solution is evenly coated to the surface of page.
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104726102A (en) * | 2015-03-16 | 2015-06-24 | 浙江理工大学 | Fluorescent anti-counterfeiting material and preparation method thereof |
CN104846698A (en) * | 2015-04-28 | 2015-08-19 | 上海大学 | Ultraviolet double-wave excitation fluorescent transparent invisible anti-fake nano-paper preparation method |
CN105719563A (en) * | 2016-04-27 | 2016-06-29 | 电子科技大学 | Dual anti-counterfeiting mark and manufacture method thereof |
CN106480775A (en) * | 2016-08-27 | 2017-03-08 | 安阳华森纸业有限责任公司 | The preparation method of fire-retardant anti-forge paper |
CN109735323A (en) * | 2019-01-09 | 2019-05-10 | 江汉大学 | A kind of preparation method of quantum dot light emitting compound |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102677537A (en) * | 2012-04-19 | 2012-09-19 | 东莞市侨盛纸业有限公司 | Anti-counterfeiting coating with colored concealed variable patterns for paper and method for preparing colored anti-counterfeiting coating |
CN102703061A (en) * | 2012-05-28 | 2012-10-03 | 扬州大学 | Method for performing fluorescent anti-counterfeit by ZnO quantum dots |
CN102912675A (en) * | 2012-10-15 | 2013-02-06 | 保定钞票纸业有限公司 | Quantum dot fluorescent anti-counterfeiting paper and manufacturing method thereof |
EP2639351A1 (en) * | 2012-03-13 | 2013-09-18 | Södra Skogsägarna ekonomisk förening | Retention of cellulose fibres |
-
2013
- 2013-12-24 CN CN201310717991.0A patent/CN103669111A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2639351A1 (en) * | 2012-03-13 | 2013-09-18 | Södra Skogsägarna ekonomisk förening | Retention of cellulose fibres |
CN102677537A (en) * | 2012-04-19 | 2012-09-19 | 东莞市侨盛纸业有限公司 | Anti-counterfeiting coating with colored concealed variable patterns for paper and method for preparing colored anti-counterfeiting coating |
CN102703061A (en) * | 2012-05-28 | 2012-10-03 | 扬州大学 | Method for performing fluorescent anti-counterfeit by ZnO quantum dots |
CN102912675A (en) * | 2012-10-15 | 2013-02-06 | 保定钞票纸业有限公司 | Quantum dot fluorescent anti-counterfeiting paper and manufacturing method thereof |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104726102A (en) * | 2015-03-16 | 2015-06-24 | 浙江理工大学 | Fluorescent anti-counterfeiting material and preparation method thereof |
CN104846698A (en) * | 2015-04-28 | 2015-08-19 | 上海大学 | Ultraviolet double-wave excitation fluorescent transparent invisible anti-fake nano-paper preparation method |
CN105719563A (en) * | 2016-04-27 | 2016-06-29 | 电子科技大学 | Dual anti-counterfeiting mark and manufacture method thereof |
CN105719563B (en) * | 2016-04-27 | 2018-09-21 | 电子科技大学 | A kind of preparation method of double anti-forge mark and double anti-forge mark |
CN106480775A (en) * | 2016-08-27 | 2017-03-08 | 安阳华森纸业有限责任公司 | The preparation method of fire-retardant anti-forge paper |
CN109735323A (en) * | 2019-01-09 | 2019-05-10 | 江汉大学 | A kind of preparation method of quantum dot light emitting compound |
CN109735323B (en) * | 2019-01-09 | 2022-07-12 | 江汉大学 | Preparation method of quantum dot luminescent compound |
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Application publication date: 20140326 |